CN112520987B - Preparation method for producing large-diameter quartz tube by multi-stage continuous melting integration method - Google Patents
Preparation method for producing large-diameter quartz tube by multi-stage continuous melting integration method Download PDFInfo
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- CN112520987B CN112520987B CN202011415126.7A CN202011415126A CN112520987B CN 112520987 B CN112520987 B CN 112520987B CN 202011415126 A CN202011415126 A CN 202011415126A CN 112520987 B CN112520987 B CN 112520987B
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B20/00—Processes specially adapted for the production of quartz or fused silica articles, not otherwise provided for
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B5/00—Melting in furnaces; Furnaces so far as specially adapted for glass manufacture
- C03B5/16—Special features of the melting process; Auxiliary means specially adapted for glass-melting furnaces
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B5/00—Melting in furnaces; Furnaces so far as specially adapted for glass manufacture
- C03B5/16—Special features of the melting process; Auxiliary means specially adapted for glass-melting furnaces
- C03B5/235—Heating the glass
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- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a preparation method for producing a large-diameter quartz tube by a multi-stage continuous melting integration method, which innovatively utilizes a four-stage continuous melting device to directly add quartz powder into a continuous melting furnace for production, effectively removes various metal impurities and non-metal impurities contained in the quartz powder through three-stage high-temperature heating, and achieves the purpose of removing the impurities through high-temperature gasification, replaces the serious defects of more processes, less impurities and more processes in the prior art, reduces the production links, achieves the best effect of one-time impurity treatment, greatly reduces the environmental pollution, improves the labor efficiency, realizes the best effect of one-time molding production, and achieves the domestic advanced level.
Description
Technical Field
The invention relates to a preparation method for producing a large-diameter quartz tube by a multi-stage continuous melting integration technology.
Background
At present, in the quartz glass industry, quartz tubes with different specifications of phi 3-480mm are produced through a plurality of production links such as quartz powder acid washing, purification, drying, medium-high magnetic iron removal, purity detection, continuous smelting furnace melting, molding traction and the like, and the problems of multiple process flows, high processing cost, low production efficiency and the like are solved.
The prior art method for treating quartz powder generally comprises the following steps: firstly, mechanically crushing raw quartz stone, and soaking a quartz block material for 96 hours by adopting strong acid such as hydrofluoric acid, hydrochloric acid and the like to remove surface impurities of the quartz block material; then drying, mechanically crushing and screening to 80-120 meshes; soaking 80-120 meshes of quartz powder in hydrofluoric acid and hydrochloric acid for 72 hours; then drying, removing iron by medium and high magnetism, and removing metal impurities of quartz powder in a multi-stage manner; drying again for the second time, wherein the water content is 1 percent; detecting impurities in the quartz powder, wherein the total impurity content is less than or equal to 30 ppm; putting the mixture into a continuous melting furnace for melting and traction production. This method has the following drawbacks:
1. the quartz powder is treated by multiple acid washing and is soaked for 72 hours by strong acid;
2. drying the quartz powder, removing iron by medium and high magnetism, and removing metal impurities of the quartz powder in a multi-stage manner;
3. the quartz powder needs to be dried for the second time, and the water content is removed by 1 percent;
4. the quartz powder needs to be subjected to impurity detection, and the total impurity content is less than or equal to 30 ppm.
Disclosure of Invention
The invention aims to overcome the defects that the treatment of quartz powder in the prior art needs acid washing for multiple times and impurity detection, and provides a preparation method for producing a large-diameter quartz tube by a multi-stage continuous melting integration method.
In order to solve the technical problems, the invention provides the following technical scheme:
a preparation method for producing a large-diameter quartz tube by a multi-stage continuous melting integration method comprises the following steps:
s1, baking the quartz powder in a first layer of continuous melting furnace to achieve that the quartz powder reflows between quartz powder lattices in a non-melting thermal temperature range and various gas impurities escaped and formed in a thermal state of the quartz powder are removed;
s2, introducing the quartz powder in the first continuous melting furnace in a high-temperature baking state into a second continuous melting furnace to melt the quartz powder, and simultaneously introducing hydrogen to allow quartz liquid to escape and form various impurity gases in a quartz solution hot reflux state;
s3, enabling the quartz liquid material in the second layer continuous melting furnace in the molten state to flow into the third layer tungsten tube to keep high-temperature melting for more than 2100 degrees, and discharging various impurity gases escaped and formed by quartz by introducing backflow hydrogen;
s4, when the molten quartz liquid material in the tungsten tube on the third layer flows into the small continuous melting furnace on the fourth layer, controlling the temperature of the forming area to be more than 2100 ℃;
and S5, drawing and forming.
Further, in the step S2, the quartz powder in the first continuous melting furnace is automatically fed into the second continuous melting furnace.
Further, the first layer continuous melting furnace in S1 is baked at 1500-1700 ℃.
Further, in S2, the second layer continuous melting furnace is baked at 2100 ℃ and 2500 ℃ for 24 hours.
The invention has the following beneficial effects: the invention innovatively utilizes a four-stage continuous melting device to directly add quartz powder into a continuous melting furnace for production, effectively removes various metal impurities and non-metal impurities contained in the quartz powder through three-stage high-temperature heating, and removes the impurities through high-temperature gasification, thereby replacing the serious defects of more processes, less impurities and more processes in the prior art.
Detailed Description
The following description of the preferred embodiments of the present invention is provided for the purpose of illustration and description, and is in no way intended to limit the invention.
Examples
A preparation method for producing a large-diameter quartz tube by a multi-stage continuous melting integration method comprises the following steps:
s1, baking the quartz powder in a first layer of continuous melting furnace at 1500-1700 ℃ to remove various gas impurities escaping and formed by the quartz powder in a thermal state through the backflow of hydrogen among quartz powder lattices in a non-melting thermal temperature range; the first layer of continuous smelting furnace adopts a common continuous smelting furnace, and quartz powder is added according to the process flow to carry out high-temperature roasting; automatically feeding quartz powder in the first layer of continuous melting furnace into the second layer of continuous melting furnace, wherein the first layer of continuous melting furnace and the second layer of continuous melting furnace are not physically connected; the temperature of the step is lower than 1700 ℃, and impurities which are volatilized into gas, such as feldspar, mica and the like and are attached to the surface of the quartz, are mainly removed;
s2, introducing the quartz powder in the first continuous melting furnace in the high-temperature baking state into a second continuous melting furnace, and continuously baking for 24 hours at 2100-; melting the quartz powder, introducing hydrogen to the quartz solution, and discharging impurities such as feldspar, mica, iron, potassium, sodium, lithium and the like which volatilize on the surface and among crystal lattices at a temperature lower than 2500 ℃ in a quartz liquid state and forming various impurity gases;
s3, enabling the quartz liquid material in the second layer continuous melting furnace in the molten state to flow into the third layer tungsten tube to keep high-temperature melting for more than 2100 degrees, and discharging various impurity gases escaped and formed by quartz by introducing backflow hydrogen;
s4, when the molten quartz liquid material in the tungsten tube on the third layer flows into the small continuous melting furnace on the fourth layer, controlling the temperature of the forming area to be more than 2100 ℃;
and S5, drawing and forming.
And the melting effect of the tungsten tube at the third layer is to discharge impurities again, and all impurities are basically discharged when the small continuous melting furnace at the fourth layer is reached, and the forming traction is started.
The content of SiO2 in the quartz tube prepared by the method reaches 99.990-99.99990%, the impurity content is less than 10ppm, and the surface of the quartz tube is subjected to four-stage continuous melting-three-stage high-temperature heating treatment process, so that various metal impurities and non-metal impurities contained in quartz powder are effectively removed, and the impurities can be removed through high-temperature gasification.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that changes may be made in the embodiments and/or equivalents thereof without departing from the spirit and scope of the invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (4)
1. A preparation method for producing a large-diameter quartz tube by a multi-stage continuous melting integration method is characterized by comprising the following steps:
s1, baking the quartz powder in a first layer of continuous melting furnace to achieve that the quartz powder reflows between quartz powder lattices in a non-melting thermal temperature range and various gas impurities escaped and formed in a thermal state of the quartz powder are removed;
s2, introducing the quartz powder in the first continuous melting furnace in a high-temperature baking state into a second continuous melting furnace to melt the quartz powder, and simultaneously introducing hydrogen to allow quartz liquid to escape and form various impurity gases in a quartz solution hot reflux state;
s3, enabling the quartz liquid material in the second layer continuous melting furnace in the molten state to flow into the third layer tungsten tube to keep high-temperature melting for more than 2100 degrees, and discharging various impurity gases escaped and formed by quartz by introducing backflow hydrogen;
s4, when the molten quartz liquid material in the tungsten tube on the third layer flows into the small continuous melting furnace on the fourth layer, controlling the temperature of the forming area to be more than 2100 ℃;
and S5, drawing and forming.
2. The method of claim 1, wherein the quartz powder in the first continuous melting furnace is automatically fed into the second continuous melting furnace in S2.
3. The method as claimed in claim 1, wherein the first layer of continuous melting furnace in S1 is baked at 1500-1700 ℃.
4. The method as claimed in claim 1, wherein the second layer of continuous melting furnace in S2 is baked at 2100-2500 ℃ for 24 hours.
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| CN202011415126.7A CN112520987B (en) | 2020-12-03 | 2020-12-03 | Preparation method for producing large-diameter quartz tube by multi-stage continuous melting integration method |
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| CN202011415126.7A CN112520987B (en) | 2020-12-03 | 2020-12-03 | Preparation method for producing large-diameter quartz tube by multi-stage continuous melting integration method |
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| CN112520987B true CN112520987B (en) | 2022-01-28 |
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| CN112624579B (en) * | 2020-12-03 | 2021-09-17 | 东海县奥兰石英科技有限公司 | Preparation method and device for producing large-diameter transparent quartz lump by integrated method |
Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1916199A (en) * | 2005-08-15 | 2007-02-21 | 天津市众合光电技术有限公司 | Technique for purifying germanium through horizontal zone melting of radio heating |
| CN101054261A (en) * | 2007-03-28 | 2007-10-17 | 徐胜利 | Method of producing large diameter transparent quartz glass tube for integrated circuit by continuous melting method |
| CN101137588A (en) * | 2005-03-09 | 2008-03-05 | 德古萨有限责任公司 | Process for the production of glass monoliths by means of the sol-gel process |
| CN101643310A (en) * | 2009-09-03 | 2010-02-10 | 成士林 | Continuous smelting one-step method for producing overlarge-caliber high-temperature deformation resistant quartz glass tube |
| CN102198937A (en) * | 2011-04-18 | 2011-09-28 | 天津大学 | Static multistage melting crystallization method for preparing electronic grade phosphoric acid |
| CN202164385U (en) * | 2011-06-30 | 2012-03-14 | 白尔隽 | High-purity germanium polycrystalline preparing zone melting furnace |
| CN102674377A (en) * | 2012-05-04 | 2012-09-19 | 武汉理工大学 | Quartz crystal type conversion metal element gasification integration purification method |
| CN102936090A (en) * | 2012-11-09 | 2013-02-20 | 中国科学院西安光学精密机械研究所 | Device and method for preparing high-purity chalcogenide glass |
| CN102965518A (en) * | 2012-11-23 | 2013-03-13 | 桂林理工大学 | High-purity metal refining method for limiting molten zone by utilizing electromagnetic shielding |
| CN202913039U (en) * | 2012-11-23 | 2013-05-01 | 桂林理工大学 | Multi-melting-zone high-frequency heating zone melting device |
| CN103754848A (en) * | 2013-12-30 | 2014-04-30 | 广西明利化工有限公司 | Method for preparing electronic-grade phosphoric acid by U-shaped pipe static multistage melt crystallization |
| EP2834200A1 (en) * | 2012-04-05 | 2015-02-11 | Heraeus Quarzglas GmbH & Co. KG | Method for the production of a mold body from an electrically melted synthetic quartz glass |
| CN111453986A (en) * | 2020-05-22 | 2020-07-28 | 新沂市东方石英玻璃有限公司 | Preparation method of high-purity low-hydroxyl quartz glass tube rod |
| CN111762787A (en) * | 2019-04-01 | 2020-10-13 | 新特能源股份有限公司 | Combined preparation method of chlorosilane and quartz |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57166325A (en) * | 1981-04-07 | 1982-10-13 | Nippon Koshuha Kk | Method for continuous melting of glass |
-
2020
- 2020-12-03 CN CN202011415126.7A patent/CN112520987B/en active Active
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101137588A (en) * | 2005-03-09 | 2008-03-05 | 德古萨有限责任公司 | Process for the production of glass monoliths by means of the sol-gel process |
| CN1916199A (en) * | 2005-08-15 | 2007-02-21 | 天津市众合光电技术有限公司 | Technique for purifying germanium through horizontal zone melting of radio heating |
| CN101054261A (en) * | 2007-03-28 | 2007-10-17 | 徐胜利 | Method of producing large diameter transparent quartz glass tube for integrated circuit by continuous melting method |
| CN101643310A (en) * | 2009-09-03 | 2010-02-10 | 成士林 | Continuous smelting one-step method for producing overlarge-caliber high-temperature deformation resistant quartz glass tube |
| CN102198937A (en) * | 2011-04-18 | 2011-09-28 | 天津大学 | Static multistage melting crystallization method for preparing electronic grade phosphoric acid |
| CN202164385U (en) * | 2011-06-30 | 2012-03-14 | 白尔隽 | High-purity germanium polycrystalline preparing zone melting furnace |
| EP2834200A1 (en) * | 2012-04-05 | 2015-02-11 | Heraeus Quarzglas GmbH & Co. KG | Method for the production of a mold body from an electrically melted synthetic quartz glass |
| CN102674377A (en) * | 2012-05-04 | 2012-09-19 | 武汉理工大学 | Quartz crystal type conversion metal element gasification integration purification method |
| CN102936090A (en) * | 2012-11-09 | 2013-02-20 | 中国科学院西安光学精密机械研究所 | Device and method for preparing high-purity chalcogenide glass |
| CN102965518A (en) * | 2012-11-23 | 2013-03-13 | 桂林理工大学 | High-purity metal refining method for limiting molten zone by utilizing electromagnetic shielding |
| CN202913039U (en) * | 2012-11-23 | 2013-05-01 | 桂林理工大学 | Multi-melting-zone high-frequency heating zone melting device |
| CN103754848A (en) * | 2013-12-30 | 2014-04-30 | 广西明利化工有限公司 | Method for preparing electronic-grade phosphoric acid by U-shaped pipe static multistage melt crystallization |
| CN111762787A (en) * | 2019-04-01 | 2020-10-13 | 新特能源股份有限公司 | Combined preparation method of chlorosilane and quartz |
| CN111453986A (en) * | 2020-05-22 | 2020-07-28 | 新沂市东方石英玻璃有限公司 | Preparation method of high-purity low-hydroxyl quartz glass tube rod |
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