CN102064260B - Device structure of grid modulation positively-mounted structure GaN base light emitting diode and manufacturing method - Google Patents
Device structure of grid modulation positively-mounted structure GaN base light emitting diode and manufacturing method Download PDFInfo
- Publication number
- CN102064260B CN102064260B CN2010105346224A CN201010534622A CN102064260B CN 102064260 B CN102064260 B CN 102064260B CN 2010105346224 A CN2010105346224 A CN 2010105346224A CN 201010534622 A CN201010534622 A CN 201010534622A CN 102064260 B CN102064260 B CN 102064260B
- Authority
- CN
- China
- Prior art keywords
- electrode
- type gan
- gan layer
- emitting diode
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 12
- 239000010980 sapphire Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000012212 insulator Substances 0.000 claims description 31
- 238000002360 preparation method Methods 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 9
- 238000004020 luminiscence type Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 229910004541 SiN Inorganic materials 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 description 7
- 230000010287 polarization Effects 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 238000005215 recombination Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 230000002269 spontaneous effect Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 230000005699 Stark effect Effects 0.000 description 1
- 208000004350 Strabismus Diseases 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000005428 wave function Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010105346224A CN102064260B (en) | 2010-11-03 | 2010-11-03 | Device structure of grid modulation positively-mounted structure GaN base light emitting diode and manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010105346224A CN102064260B (en) | 2010-11-03 | 2010-11-03 | Device structure of grid modulation positively-mounted structure GaN base light emitting diode and manufacturing method |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102064260A CN102064260A (en) | 2011-05-18 |
CN102064260B true CN102064260B (en) | 2012-08-15 |
Family
ID=43999460
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010105346224A Expired - Fee Related CN102064260B (en) | 2010-11-03 | 2010-11-03 | Device structure of grid modulation positively-mounted structure GaN base light emitting diode and manufacturing method |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN102064260B (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105932129B (en) * | 2016-04-22 | 2018-11-02 | 河北工业大学 | A kind of chip structure of LED and preparation method thereof |
CN105702816B (en) * | 2016-04-22 | 2018-03-30 | 河北工业大学 | A kind of preparation method of iii-nitride light emitting devices chip |
JP7203390B2 (en) * | 2020-10-13 | 2023-01-13 | セイコーエプソン株式会社 | Light-emitting device and projector |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4721983A (en) * | 1986-01-31 | 1988-01-26 | Texas Instruments Incorporated | Three terminal tunneling device |
US5646418A (en) * | 1990-11-02 | 1997-07-08 | Texas Instruments Incorporated | Quantum effect switching device |
US7385230B1 (en) * | 2005-02-08 | 2008-06-10 | The University Of Connecticut | Modulation doped thyristor and complementary transistor combination for a monolithic optoelectronic integrated circuit |
JP2007242746A (en) * | 2006-03-07 | 2007-09-20 | Nippon Telegr & Teleph Corp <Ntt> | Dual gate high-electron mobility transistor (hemt) structure semiconductor modulation element and method of manufacturing same |
US20100270591A1 (en) * | 2009-04-27 | 2010-10-28 | University Of Seoul Industry Cooperation Foundation | High-electron mobility transistor |
-
2010
- 2010-11-03 CN CN2010105346224A patent/CN102064260B/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN102064260A (en) | 2011-05-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Lee et al. | Comparison of InGaN-based LEDs grown on conventional sapphire and cone-shape-patterned sapphire substrate | |
US8525221B2 (en) | LED with improved injection efficiency | |
KR101611412B1 (en) | Light emitting device | |
JP4110222B2 (en) | Light emitting diode | |
CN102270716B (en) | Multi-source integrated color-adjustable light-emitting component and preparation method thereof | |
JP2015046598A (en) | Semiconductor light emitting device including hole injection layer, and method of manufacturing the same | |
CN101257081A (en) | Dual wavelength single chip LED | |
CN101728462A (en) | Multi-wavelength light-emitting diode and production method thereof | |
CN102610715A (en) | Method for producing nano fluorescent powder-free gallium nitride white light-emitting diode | |
CN101355127A (en) | LED quantum well structure capable of improving III group nitride lighting efficiency and growing method thereof | |
CN102347408B (en) | GaN-base double-blue-light wavelength luminescent device and preparation method thereof | |
KR101335945B1 (en) | Semiconductor light emitting device | |
CN102064260B (en) | Device structure of grid modulation positively-mounted structure GaN base light emitting diode and manufacturing method | |
CN102104097A (en) | Multi-quantum well structure, light-emitting diode and light-emitting diode package | |
CN105702829B (en) | Light emitting diode epitaxial structure with P-type ohmic contact layer | |
CN103681997A (en) | LED chip capable of emitting light in required color and manufacturing method thereof | |
KR100646570B1 (en) | Light emitting diode and fabricating method thereof | |
CN101281945A (en) | GaN base LED epitaxial wafer capable of transmitting light with vary wavelength meanwhile and preparation method thereof | |
CN102064261B (en) | GaN (gallium nitride)-based light-emitting diode (LED) device structure with grid modulated vertical structure and preparation method thereof | |
CN110416376B (en) | Semiconductor heterojunction light-emitting chip capable of directly emitting white light | |
KR101241331B1 (en) | Nitride based LED and method of manufacturing the same | |
CN104347764A (en) | Novel GaN-base monolithic chip white-light LED device and manufacture method thereof | |
TW200410425A (en) | Light emitting diode structure | |
KR20130011918A (en) | Semiconductor light emitting device | |
CN107394021B (en) | Heterostructure LED device for enhancing hole injection |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SHENZHEN ZHOUMING TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: SEMICONDUCTOR INST., CHINESE ACADEMY OF SCIENCES Effective date: 20131113 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 100083 HAIDIAN, BEIJING TO: 518000 SHENZHEN, GUANGDONG PROVINCE |
|
TR01 | Transfer of patent right |
Effective date of registration: 20131113 Address after: 518000 Baoan District, Shenzhen, Fuyong Street Community bridge Yongfu Road, No. 112 Patentee after: Shenzhen Zhouming Technology Co.,Ltd. Address before: 100083 Beijing Qinghua East Road, Haidian District, No. 35 Patentee before: INSTITUTE OF SEMICONDUCTORS, CHINESE ACADEMY OF SCIENCES |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120815 |
|
CF01 | Termination of patent right due to non-payment of annual fee |