CN102062980B - Transflective fringing field switching type liquid crystal display and manufacturing method thereof - Google Patents
Transflective fringing field switching type liquid crystal display and manufacturing method thereof Download PDFInfo
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Abstract
The invention provides a transflective fringing field switching type liquid crystal display device which comprises a first substrate and a second substrate, wherein the second substrate comprises a reflection region and a penetration region. The display is manufactured through the traditional illumination manufacture procedure, wherein the space between the penetration region and the first substrate is two times as large as the space between the reflection region and the first substrate.
Description
[technical field]
The present invention relates to partly wear anti-(transflective) fringing field and switch (Fringe Field Switch; Hereinafter to be referred as FFS) type LCD (Liquid Crystal Display; Hereinafter to be referred as LCD) and manufacturing approach, more particularly, produce through existing processing procedure and partly to wear anti-FFS type LCD; Reduce the processing procedure time, thereby reduced manufacturing cost.
[background technology]
In the prior art, LCD roughly can be divided into the reflection type LCD that utilizes penetrating type LCD backlight and utilize natural light.It is backlight as light source that penetrating type LCD uses, so even under dark surrounds also display image brightly, but the higher and outdoor sharpness of power consumption that causes backlight is relatively poor.On the other hand, reflection type LCD utilizes the natural light around it, rather than backlight, so this LCD consumes less power, and can use in outdoor location, but when surrounding environment was dark, this LCD just can't use.
In other words, common penetrating type LCD has good brightness, color reprodubility, contrast (CR) etc. in indoor place, but at outdoor location, because the sunshine of sunshine or reflection causes possibly seeing information from this LCD hardly.Because the sharpness of penetrating type LCD that self can not be luminous depends on the penetrance of brightness backlight and LCD plate, again because when sunlight intensity is very big when outdoor, the outdoor sharpness decline of this penetrating type LCD.For head it off, can improve brightness backlight, but need too much power consumption like this.Therefore, semi penetration type LCD has been proposed, to overcome the two shortcoming of penetrating type LCD and reflection type LCD.Compatible reflection type LCD of semi penetration type LCD and penetrating type LCD, so it can consume few relatively power, and can in dark surrounds, use.
Usually; Semi penetration type LCD is designed to have single cell gap (Single cell gap) structure or dual cell gap (dual cell gap) structure; In single cell-gap configuration; The cell gap of penetration region equals the cell gap of reflector space, and in dual cell-gap configuration, the cell gap of penetration region is the twice of the cell gap of reflector space.Yet; When using identical liquid crystal mode to make semi penetration type LCD with single cell-gap configuration; The phase delay of reflector space is the twice of the phase delay of penetration region; Make reflective-mode with penetrate not matching of pattern, thereby cause inharmonic gray level, and cause electro-optical characteristic generation deterioration.
Therefore, just setting about making the semi penetration type LCD with dual cell-gap configuration, wherein, penetration region is designed to the twice that its cell gap is the cell gap of reflector space.Like this, the V-R curve of reflective-mode can be complementary with the V-T curve of the pattern of penetrating.
Yet; As shown in Figure 1, when being applied to the FFS mode LCD to semi penetration type, must carry out process of resin (resin process) to be formed for the jog of echo area and penetrating region; Like United States Patent (USP) notification number US7414685; Wherein mentioned resin 10 processing are very difficult in the instructions, and this is can't be avoided basic pollution fully man-hour because of adding in its manufacturing, and this process of resin is also very expensive.
Under above-mentioned background, need study, so that can utilize some characteristics of semi penetration type LCD, such as outdoor sharpness etc., the manufacturing process that keeps common penetration FFS mode LCD simultaneously.
[summary of the invention]
Based on the problems referred to above; An object of the present invention is to provide a kind of fringing field and switch (FFS) type LCD (LCD) and manufacturing approach thereof; Wherein, under the situation of the operation that does not change normal transmissive FFS mode LCD, form dual cell gap (dual cell gap) structure and partly wear anti-structure; Utilize the fundamental characteristics of FFS mode LCD, improved outdoor sharpness.
To achieve these goals, according to an aspect of the present invention, a kind of fringing field switching type liquid crystal display is provided, it comprises one first substrate; One second substrate, this substrate comprises: a reflector space, this reflector space includes: a first metal layer, an insulation course; Cover on the first metal layer, semi-conductor layer covers on the insulation course; One mixes semiconductor layer, covers on the semiconductor layer one second metal level; Cover and mix on the semiconductor layer, a passivation layer covers on second metal level; One reflector space, this reflector space comprises: an insulation course; One pixel electrode layer covers on this insulation course.Wherein the spacing of this penetration region and this first substrate is the twice of the spacing of this reflector space and this first substrate.And be inserted in the liquid crystal layer between said first substrate and said second substrate.
Cause electrode and the more weak defective of liquid crystal apart from each other driving force in order to improve the echo area electrode because of being insulated layer covering, the invention provides another solution aspect, a kind of fringing field switching type liquid crystal display is provided, it comprises one first substrate; One second substrate, this substrate comprises: a reflector space, this reflector space includes: a first metal layer, an insulation course; Cover on the first metal layer, semi-conductor layer covers on the insulation course; One mixes semiconductor layer, covers on the semiconductor layer one second metal level; Cover and mix on the semiconductor layer, a passivation layer covers on second metal level; One reflector space, this reflector space comprises: an insulation course; One pixel electrode layer covers on this insulation course.Wherein the spacing of this penetration region and this first substrate is the twice of the spacing of this reflector space and this first substrate.And be inserted in the liquid crystal layer between said first substrate and said second substrate.Form comb electrode and spaced apart with reflecting electrode, and also have in the echo area and to pass through the reflecting electrode coated electrode that connecting hole and second metal level partly link to each other, this coated electrode is not connected with pixel electrode.
The present invention's the visual angle that is to promote the FFS liquid crystal indicator on the other hand provides the visual effect of multiple domain simultaneously, and it comprises one first substrate; One second substrate, this substrate comprises: a reflector space, this reflector space includes: a first metal layer, an insulation course; Cover on the first metal layer, semi-conductor layer covers on the insulation course; One mixes semiconductor layer, covers on the semiconductor layer one second metal level; Cover and mix on the semiconductor layer, a passivation layer covers on second metal level; One reflector space, this reflector space comprises: an insulation course; One pixel electrode layer covers on this insulation course.Wherein the spacing of this penetration region and this first substrate is the twice of the spacing of this reflector space and this first substrate.And be inserted in the liquid crystal layer between said first substrate and said second substrate.Form comb electrode and and reflecting electrode spaced apart; And those electrodes comprise the part of a bending; Common electrode wire is distributed in the part of those electrode bendings; Also have the reflecting electrode coated electrode that partly links to each other through the connecting hole and second metal level in the echo area, this coated electrode is not connected with pixel electrode.
[description of drawings]
Fig. 1 is a semi-penetrating inverse LCD device shown in the preceding case
Fig. 2 is this patent first embodiment synoptic diagram
Fig. 3 is the cut-open view of Fig. 2 along the A-A direction
Fig. 4 is this patent second embodiment synoptic diagram
Fig. 5 is the cut-open view of Fig. 4 along the A-A direction
Fig. 6 is this patent the 3rd an embodiment synoptic diagram
Fig. 7 is the cut-open view of Fig. 6 along the A-A direction
[embodiment]
Below in conjunction with accompanying drawing and embodiment the present invention is elaborated.
Please be simultaneously with reference to Fig. 2 and shown in Figure 3, wherein Fig. 2 partly wears the transoid display panels first embodiment synoptic diagram for FFS of the present invention, and Fig. 3 is the cut-open view of Fig. 2 along the A-A direction; In the present invention, include reflector space R and penetration region T in its picture element viewing area, as shown in Figure 3; And simultaneously with reference to Fig. 2, one first substrate, 100, one second substrates 200 and first substrate 100 are oppositely arranged; On second substrate 200, deposit the first metal layer 10, its first metal layer 10 is formed with sweep trace 11, common electrode wire 12, common electrode 13, grid 14, and wherein sweep trace 11 is the along continuous straight runs configuration with common electrode wire 12; Common electrode 13 is vertically configuration and connects common electrode wire 12; This grid 14 ties up in the thin film transistor (TFT) (Thin Film Transister is hereinafter to be referred as TFT), for sweep trace 11 extends teat to the picture element zone; The formed zone of this TFT is called the TFT switch region.It is above-mentioned to continue; Covering an insulation course 40 on the first metal layer 10 and on second substrate 200 earlier; Form semi-conductor layer 50 and again and mix semiconductor layer 51; It covers respectively on the grid 14 of TFT switch region, and this semiconductor layer 50 mixes semiconductor layer 51 with this and also be arranged on the common electrode 13, on common electrode 13, forms this semiconductor layer 50 and mixes to form a hole and extend in the semiconductor layer 51 with this and penetrate insulation course 40 to expose this common electrode 13.And then; Form one second metal level 20; Right this second metal level 20 is formed with source electrode 22, drain 23, reflecting electrode 25 and data line 21; Wherein this source electrode 22 forms in the TFT switch region respectively and is covered on the grid 14 with drain 23; The semiconductor layer 50 that reflecting electrode 25 covers common electrode 13 with mix on the semiconductor layer 51, and the reflecting electrode in this second metal level 20 25 sees through above-mentioned hole and is connected with common electrode 13 (showing not label among the figure), and this data line 21 forms outside the picture element viewing area and distributes perpendicular to gate line 11.Then deposit one deck passivation layer 60 again and cover whole second substrate 200; The part of removing penetration region T through the development etch process forms electrode trenches 61; Wherein this electrode trenches 61 is a rectangular-shaped groove, but is not limited thereto, and this electrode trenches 61 is for expose insulation course 40 at penetrating region; And this electrode trenches 61 after the electrode processing procedure in be filled; To form the pixel electrode of strip, in same development etch process, etch the pixel electrode connecting hole 70 of TFT switch region in addition.At last; Form a transparent electrode layer 30 and be distributed in the TFT switch region and connect drain 23, in addition, on penetration region T electrode trenches 61, pectination pixel electrode 31 is set through pixel electrode connecting hole 70; Thereby drive the liquid crystal rotation through forming electric field between pectination pixel electrode 31 and the common electrode 13; Because the common electrode 13 of reflector space R is insulated layer 40, semiconductor layer 50, mixes semiconductor layer 51, reflecting electrode 25 and passivation layer and cover, so away from liquid crystal layer, makes driving force strong inadequately; For reducing power consumption; Reflecting electrode 25 is coupled together through hole and common electrode 13, thereby make the electrode that forms fringe field, to reach the purpose that reduces driving power more near liquid crystal layer.Wherein said the first metal layer 10 only is distributed in reflector space R and TFT switch region; Described insulation course 40 is distributed in reflector space R, TFT switch region and penetration region T; Described semiconductor layer 50 only is distributed in reflector space R and TFT switch region and covers on the insulation course 40; One mixes semiconductor layer 51, only is distributed in reflector space R and TFT switch region, and covers on the semiconductor layer 50; One second metal level 20 only is distributed in reflector space R and TFT switch region, and covers and mix on the semiconductor layer 51; One passivation layer 60 covers on the insulation course 40 and second metal level 20; One pixel electrode layer 30 covers on the passivation layer 60, forms comb electrode 31, and this comb electrode and reflecting electrode 25 are spaced apart.Thus; Because the rete at the regional T that penetrates includes insulation course 40 and comb electrode 31; And include common electrode 13, insulation course 40, semiconductor layer 50, mix semiconductor layer 51, reflecting electrode 25, passivation layer 60 at the rete of reflector space R; Therefore, the rete of reflector space R and penetration region T Comparatively speaking, the part that has more is common electrode 13, semiconductor layer 50, mix semiconductor layer 51, reflecting electrode 25 and passivation layer 60; And lacked comb electrode layer 31; So the spacing between the pixel electrode 31 of the pectination of penetration region T and second substrate 200 will be greater than the common electrode 13 of reflector space R and the spacing between first substrate 100, it is through controlling the thickness of each rete, and the pixel electrode 31 and the spacing between first substrate 200 that reach the pectination of penetration region T are the twices of the spacing between the reflector space R reflecting electrode 25 and first substrate 100; Being illustrated spacing at penetration region T is 2d, and is d. in the spacing of reflector space R
Cause electrode and the more weak defective of liquid crystal apart from each other driving force in order further to improve the echo area electrode because of being insulated layer covering, the invention provides another embodiment, please be simultaneously with reference to Fig. 4 and shown in Figure 5; Wherein Fig. 4 partly wears the transoid display panels second embodiment synoptic diagram for FFS of the present invention, and Fig. 5 is the cut-open view of Fig. 4 along the A-A direction, in the present invention; Include reflector space R and penetration region T in its picture element viewing area, as shown in Figure 5, and simultaneously with reference to Fig. 4; One first substrate 100; One second substrate 200 and first substrate 100 are oppositely arranged, and on second substrate 200, deposit the first metal layer 10, and its first metal layer 10 is formed with sweep trace 11, common electrode wire 12, common electrode 13, grid 14; Wherein sweep trace 11 is the along continuous straight runs configuration with common electrode wire 12; Common electrode 13 is vertically configuration and connects common electrode wire 12 that this grid 14 ties up to the TFT switch region, for sweep trace 11 extends teat to the picture element zone.It is above-mentioned to continue; Covering an insulation course 40 on the first metal layer 10 and on second substrate 200 earlier; Form semi-conductor layer 50 again and mix on the grid 14 that semiconductor layer 51 covers the TFT switch region respectively; And this semiconductor layer 50 with mix semiconductor layer 51 and also be arranged on the common electrode 13, and form a hole and penetrate insulation course 40 and expose common electrode 13.And then; Form one second metal level 20; Right this second metal level 20 is formed with source electrode 22, drain 23, reflecting electrode 25 and data line 21; Wherein this source electrode 22 forms in the TFT switch region respectively and is covered on the grid 14 with drain 23; The semiconductor layer 50 that reflecting electrode 25 covers common electrode 13 with mix on the semiconductor layer 51, and this reflecting electrode 25 sees through above-mentioned hole and is connected with common electrode 13 (showing not label among the figure), and this data line 21 forms outside the picture element viewing area and distributes perpendicular to gate line 11.Then deposit one deck passivation layer 60 again and cover whole second substrate 200; The part of removing penetration region T through the development etch process forms electrode trenches 61; Wherein this electrode trenches 61 is a rectangular-shaped groove, but is not limited thereto, and this electrode trenches 61 is for exposing insulation course at penetrating region; And this electrode trenches 61 after the electrode processing procedure in be filled, to form the pixel electrode of strip; In same development etch process, etch the pixel electrode connecting hole 70 of TFT switch region.Simultaneously, on reflecting electrode 25, etch reflecting electrode connecting hole 80.Forming a transparent electrode layer 30 at last is distributed in the TFT switch region and connects drain 23 through pixel electrode connecting hole 70; Distribution pectination pixel electrode 31 in penetration region T electrode trenches; At reflector space, formed the reflecting electrode coated electrode, this electrode is not connected with pixel electrode, and the reflecting electrode coated electrode links to each other with reflecting electrode 25 through connecting hole 80.On this external penetration region T electrode trenches 61 pectination pixel electrode 31 is set, thereby drives the liquid crystal rotation through forming electric field between pectination pixel electrode 31 and the common electrode 13.Because the common electrode 13 of reflector space R is insulated layer 40, semiconductor layer 50, mixes semiconductor layer 51, reflecting electrode 25 and passivation layer and cover, so away from liquid crystal layer, makes driving force strong inadequately; For reducing power consumption; Reflecting electrode 25 is coupled together through hole and common electrode 13, and in addition, reflecting electrode links to each other with the reflecting electrode coated electrode through connecting hole 80 again; Thereby make the electrode that forms fringe field more near liquid crystal layer, to reach the purpose that reduces driving power.Wherein said the first metal layer 10 only is distributed in reflector space R and TFT switch region; Described insulation course 40 is distributed in reflector space R, TFT switch region and penetration region T; Described semiconductor layer 50 only is distributed in reflector space R and TFT switch region and covers on the insulation course 40; One mixes semiconductor layer 51, only is distributed in reflector space R and TFT switch region, and covers on the semiconductor layer 50; One second metal level 20 only is distributed in reflector space R and TFT switch region, and covers and mix on the semiconductor layer 51; One passivation layer 60 covers on the insulation course 40 and second metal level 20; One pixel electrode layer 30 covers on the passivation layer 60, forms comb electrode 31, and the comb electrode 31 that forms is spaced apart with common electrode 13.Thus; Because the rete at the regional T that penetrates includes insulation course 40 and comb electrode 31; Rete at reflector space R includes common electrode 13, insulation course 40, semiconductor layer 50, mixes semiconductor layer 51, reflecting electrode 25, passivation layer 60; Therefore, the rete of reflector space R and penetration region T Comparatively speaking, the part that has more is common electrode 13, semiconductor layer 50, mix semiconductor layer 51, reflecting electrode 25 and passivation layer 60; And lacked comb electrode layer 31; So the spacing between the pixel electrode 31 of the pectination of penetration region T and second substrate 200 will be greater than the common electrode 13 of reflector space R and the spacing between first substrate 100, it is through controlling the thickness of each rete, and the pixel electrode 31 and the spacing between first substrate 200 that reach the pectination of penetration region T are the twices of the spacing between the reflector space R reflecting electrode 25 and first substrate 100; Being illustrated spacing at penetration region T is 2d, and is d. in the spacing of reflector space R
In order further to promote the visual angle of FFS liquid crystal indicator, the visual effect of multiple domain is provided simultaneously, the invention provides the 3rd embodiment; Please be simultaneously with reference to Fig. 6 and shown in Figure 7, wherein Fig. 6 partly wears transoid display panels the 3rd embodiment synoptic diagram for FFS of the present invention, and Fig. 7 is the cut-open view of Fig. 6 along the A-A direction; In the present invention, include reflector space R and penetration region T in its picture element viewing area, as shown in Figure 7; And simultaneously with reference to Fig. 6, one first substrate, 100, one second substrates 200 and first substrate 100 are oppositely arranged; On second substrate 200, deposit the first metal layer 10; Its first metal layer 10 is formed with sweep trace 11, common electrode wire 12, common electrode 13, grid 14, and wherein sweep trace 11 is the along continuous straight runs configuration with common electrode wire 12, and common electrode 13 is that the edge is acute angle configuration and is connected common electrode wire 12 with horizontal direction; This grid 14 ties up to the TFT switch region, for sweep trace 11 extends teat to the picture element zone.It is above-mentioned to continue; Covering an insulation course 40 on the first metal layer 10 and on second substrate 200 earlier; Form semi-conductor layer 50 again and mix on the grid 14 that semiconductor layer 51 covers the TFT switch region respectively; And this semiconductor layer 50 with mix semiconductor layer 51 and also be arranged on the common electrode 13, and form a hole and penetrate insulation course 40 and expose common electrode 13.And then; Form one second metal level 20; Right this second metal level 20 is formed with source electrode 22, drain 23, reflecting electrode 25 and data line 21, and wherein this source electrode 22 forms in the TFT switch region respectively and is covered on the grid 14 with drain 23, and reflecting electrode 25 covers the semiconductor layer 50 of common electrode 13 and mixes on the semiconductor layer 51; And see through above-mentioned hole and connect common electrode 13, and this data line 21 forms outside the picture element viewing area and distributes perpendicular to gate line 11.Then deposit one deck passivation layer 60 again and cover whole second substrate 200; The part of removing penetration region T through the development etch process forms electrode trenches 61; Wherein this electrode trenches 61 is a rectangular-shaped groove, but is not limited thereto, and this electrode trenches 61 is for exposing insulation course at penetrating region; And this electrode trenches 61 after the electrode processing procedure in be filled, to form the pixel electrode of strip; In the development etch process, etch the pixel electrode connecting hole 70 of TFT switch region.Forming a transparent electrode layer 30 at last is distributed in the TFT switch region and connects drain 23 through pixel electrode connecting hole 70; On this external penetration region T electrode trenches 61 pectination pixel electrode 31 is set, thereby drives the liquid crystal rotation through forming electric field between pectination pixel electrode 31 and the common electrode 13.Because the common electrode 13 of reflector space R is insulated layer 40, semiconductor layer 50, mixes semiconductor layer 51, reflecting electrode 25 and passivation layer and cover; Therefore away from liquid crystal layer; Make driving force strong inadequately,, reflecting electrode 25 is coupled together through hole and common electrode 13 for reducing power consumption; Thereby make the electrode that forms fringe field more near liquid crystal layer, to reach the purpose that reduces driving power.Wherein said the first metal layer 10 only is distributed in reflector space R and TFT switch region; Described insulation course 40 is distributed in reflector space R, TFT switch region and penetration region T; Described semiconductor layer 50, only be distributed in reflector space R and thin film transistor (TFT) TFT the zone and cover on the insulation course 40; One mixes semiconductor layer 51, only is distributed in reflector space R and TFT switch region, and covers on the semiconductor layer 50; One second metal level 20 only is distributed in reflector space R and TFT switch region, and covers and mix on the semiconductor layer 51; One passivation layer 60 covers on the insulation course 40 and second metal level 20; One pixel electrode layer 30 covers on the passivation layer 60, forms comb electrode 31, and the comb electrode and the common electrode 13 that form are spaced apart.Thus; Because the rete at the regional T that penetrates includes insulation course 40 and comb electrode 31; Rete at reflector space R includes common electrode 13, insulation course 40, semiconductor layer 50, mixes semiconductor layer 51, reflecting electrode 25, passivation layer 60; Therefore, the rete of reflector space R and penetration region T Comparatively speaking, the part that has more is common electrode 13, semiconductor layer 50, mix semiconductor layer 51, reflecting electrode 25 and passivation layer 60; And lacked comb electrode layer 31; So the spacing between the pixel electrode 31 of the pectination of penetration region T and second substrate 200 will be greater than the common electrode 13 of reflector space R and the spacing between first substrate 100, it is through controlling the thickness of each rete, and the pixel electrode 31 and the spacing between first substrate 200 that reach the pectination of penetration region T are the twices of the spacing between the reflector space R reflecting electrode 25 and first substrate 100; Being illustrated spacing at penetration region T is 2d, and is d. in the spacing of reflector space R
In the above-described embodiments, only the present invention has been carried out exemplary description, but those skilled in the art can carry out various modifications to the present invention after reading present patent application under the situation that does not break away from the spirit and scope of the present invention.
Claims (9)
1. one and half wear anti-fringing field switching type liquid crystal display device, comprise:
One first substrate;
One second substrate, itself and first substrate are oppositely arranged, and this second substrate comprises most picture elements zones, and each picture element zone comprises:
One reflector space, this reflector space are that multilayer film are formed by stacking, and it includes:
One the first metal layer, it is arranged on second substrate, and this first metal layer forms and includes common electrode;
One insulation course, this insulation course are that stacked system is covered on the first metal layer;
Semi-conductor layer, this semiconductor layer are that stacked system is covered on the insulation course;
One mixes semiconductor layer, and this mixes semiconductor layer is that stacked system is covered on the semiconductor layer, forms a hole simultaneously and extend to penetrate insulation course to expose this common electrode;
One second metal level, this second metal level are that stacked system is covered in and mixes on the semiconductor layer, and this second metal level forms and includes reflecting electrode, and wherein this reflecting electrode sees through described hole and is connected with this common electrode;
One passivation layer, this passivation layer are that stacked system is covered on second metal level;
One penetration region, the alternate intervals setting in each picture element zone of its this penetration region and reflector space, and this penetration region includes:
One insulation course, it is arranged on second substrate;
One pixel electrode layer, this pixel electrode layer are that stacked system is covered on this insulation course; Wherein the distance between this penetration region and this first substrate is the twice of the distance between this reflector space and this first substrate.
2. as claimed in claim 1ly partly wear anti-fringing field switching type liquid crystal display device, wherein said the first metal layer includes gate line, grid, common electrode, common electrode wire.
3. as claimed in claim 1ly partly wear anti-fringing field switching type liquid crystal display device, wherein said second metal level includes data line, source electrode, drain and reflecting electrode.
4. as claimed in claim 3ly partly wear anti-fringing field switching type liquid crystal display device, wherein said reflecting electrode is distributed in reflector space, and is covered in and mixes on the semiconductor layer.
5. as claimed in claim 1ly partly wear anti-fringing field switching type liquid crystal display device, described passivation layer also comprises a contact hole and a plurality of connecting hole in each picture element zone.
6. as claimed in claim 5ly partly wear anti-fringing field switching type liquid crystal display device, described pixel electrode layer forms pixel electrode and contacts with drain through contact hole.
7. as claimed in claim 5ly partly wear anti-fringing field switching type liquid crystal display device, described connecting hole is distributed on the reflecting electrode, and exposes reflecting electrode.
8. as claimed in claim 1ly partly wear anti-fringing field switching type liquid crystal display device, described passivation layer also comprises a plurality of electrode trenches in each picture element zone, and those electrode trenches are distributed in penetration region, and expose insulation course.
9. as claimed in claim 8ly partly wear anti-fringing field switching type liquid crystal display device, deposit pixel electrode in the described electrode trenches.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105811495A CN102062980B (en) | 2010-12-09 | 2010-12-09 | Transflective fringing field switching type liquid crystal display and manufacturing method thereof |
| TW100113599A TWI435142B (en) | 2010-12-09 | 2011-04-19 | Transflective fringe field switching mode liquid crystal display |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010105811495A CN102062980B (en) | 2010-12-09 | 2010-12-09 | Transflective fringing field switching type liquid crystal display and manufacturing method thereof |
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| JP3695415B2 (en) * | 2002-04-10 | 2005-09-14 | セイコーエプソン株式会社 | Electro-optical panel substrate, manufacturing method thereof, electro-optical panel, and manufacturing method thereof |
| US6650385B1 (en) * | 2002-04-24 | 2003-11-18 | Prime View International Co., Ltd. | Scattering fringe field optical-compensated reflective and transflective liquid crystal display |
| JP2008191480A (en) * | 2007-02-06 | 2008-08-21 | Sony Corp | Liquid crystal display device and electronic apparatus |
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