CN101592817B - Transflective liquid crystal display (LCD) device - Google Patents
Transflective liquid crystal display (LCD) device Download PDFInfo
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- CN101592817B CN101592817B CN200810067526A CN200810067526A CN101592817B CN 101592817 B CN101592817 B CN 101592817B CN 200810067526 A CN200810067526 A CN 200810067526A CN 200810067526 A CN200810067526 A CN 200810067526A CN 101592817 B CN101592817 B CN 101592817B
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Abstract
The invention relates to a transflective liquid crystal display (LCD) device which comprises a plurality of pixel regions. Each pixel region comprises a through electrode for receiving gray scale voltage and a plurality of reflecting units which are in electric floating connection and are mutually independent, wherein the through electrode comprises a plurality of openings, and the reflecting units are arranged corresponding to the openings.
Description
Technical field
The present invention relates to a kind of semi-penetrating semi-reflecting type liquid crystal displaying device.
Background technology
Liquid crystal indicator is because of characteristics such as have low diathermaneity, volume is compact and power consumption is low, and is day by day extensive in the use, and along with the ripe and development of correlation technique, its kind is also various day by day.
According to the difference of light source that liquid crystal indicator utilizes, liquid crystal indicator can be divided into penetration liquid crystal display device and reflective LCD device.Penetration liquid crystal display device must be provided with a backlight at the display panels back side and show to realize image, and still, the energy consumption of backlight accounts for the half the of whole penetration liquid crystal display device energy consumption, so the energy consumption of penetration liquid crystal display device is bigger.Reflective LCD device can solve the big problem of penetration liquid crystal display device energy consumption, but is difficult under the faint environment of light realize that image shows.Semi-penetrating semi-reflecting type liquid crystal displaying device can solve above problem.
Fig. 1 is the diagrammatic cross-section of a kind of semi-penetrating semi-reflecting type liquid crystal displaying device of prior art.This semi-penetrating semi-reflecting type liquid crystal displaying device 1 comprises that second substrate 12, that one first substrate, 11, one relative first substrates are provided with is clipped in the liquid crystal layer 13 between this first substrate 11 and second substrate 12.This second substrate 12 comprises a plurality of through electrodes 14 and a plurality of reflecting electrodes 15.Usually, these reflecting electrode 15 regions are defined as echo area R, and these through electrode 14 regions are defined as penetrating region T.The echo area R of this semi-penetrating semi-reflecting type liquid crystal displaying device 1 can utilize ambient light realize to show, the light that its penetrating region T then can utilize a light source (figure does not show) to send in the faint environment of light is realized showing.But; The light 16 of this echo area R incides this reflecting electrode 15 through first substrate 11 with liquid crystal layer 13 by external environment condition earlier; Reflection back is penetrated through the liquid crystal layer 13 and first substrate 11 for the second time, 17 of the light of this penetrating region T by light source through second substrate 12, liquid crystal layer 13 and 11 ejaculations of first substrate.Therefore the optical path difference of light R and penetrating region T in the echo area and inequality, and then this semi-penetrating semi-reflecting type liquid crystal displaying device 1 is when the same picture of demonstration, and echo area R and penetrating region T can demonstrate different gray levels or color, cause display quality not good.
In order to improve above-mentioned shortcoming; A kind of prior art semi-penetrating semi-reflecting type liquid crystal displaying device is provided with projection or step at this first substrate 11 or R place, second substrate, 12 corresponding echo area; Make echo area R different, with the different optical path differences of compensation light R and penetrating region T in the echo area with liquid crystal layer 13 thickness of penetrating region T.But at this first substrate 11 or second substrate 12 projection or step are set and make more complicated that the manufacturing process of substrate becomes.
Summary of the invention
Be to solve that the semi-penetrating semi-reflecting type liquid crystal displaying device manufacturing process is complicated, the relatively poor shortcoming of display quality, be necessary to provide that a kind of manufacturing process is simple, display quality semi-penetrating semi-reflecting type liquid crystal displaying device preferably.
A kind of semi-penetrating semi-reflecting type liquid crystal displaying device, it comprises a plurality of pixel regions, each pixel region comprises that one is used for receiving through electrode and a plurality of electrical suspension joint and the separate reflector element of gray scale voltage.Wherein, this through electrode comprises a plurality of openings, and this reflector element is to should the opening setting.
A kind of semi-penetrating semi-reflecting type liquid crystal displaying device; It comprises that a substrate, many are arranged on the vertical data line of the sweep trace of this substrate one side, many and this sweep trace insulation, a plurality of thin film transistor (TFT) and a plurality of through electrode that is electrically connected with this thin film transistor (TFT) respectively that is positioned at sweep trace and data line intersection, and each through electrode correspondence is provided with a plurality of electrical suspension joints and separate reflector element.Wherein, this through electrode comprises a plurality of openings, and this reflector element is to should the opening setting.
A kind of semi-penetrating semi-reflecting type liquid crystal displaying device, it comprises a substrate; Many the sweep traces that are arranged on this substrate one side; One covers first insulation course of this sweep trace and this substrate of part; One is arranged on the source/drain of the semiconductor layer of this first insulation course subregion, this semiconductor layer of a plurality of cover part and this first insulation course of part; A plurality of data line and capacitance electrodes that are arranged on this first insulation course; One covers second insulation course of this source/drain, this capacitance electrode, this semiconductor layer of part, this first insulation course of part; With a plurality of through electrode and reflector elements that are arranged on this second insulation course.Wherein, each through electrode comprises a plurality of openings, and this each opening part correspondence is provided with a reflector element, the electrical suspension joint of this reflector element.
A kind of semi-penetrating semi-reflecting type liquid crystal displaying device, it comprises that one first substrate, one second substrate and are clipped in the liquid crystal layer between this two substrate.This first substrate comprises many sweep traces that are arranged on contiguous this liquid crystal layer one side of this first substrate; One covers first insulation course of this sweep trace and this first substrate of part; One is arranged on the semiconductor layer of this first insulation course subregion and contiguous this liquid crystal layer one side; The source/drain of this semiconductor layer of a plurality of cover parts and this first insulation course of part, many data lines that are arranged on contiguous this liquid crystal layer one side of this first insulation course; One covers second insulation course of this source/drain, this semiconductor layer of part, this first insulation course of part; With a plurality of first through electrode and reflector elements that are arranged on contiguous this liquid crystal layer one side of this second insulation course.Wherein, each first through electrode comprises a plurality of openings, and this each opening part correspondence is provided with a reflector element, the electrical suspension joint of this reflector element.
Compared to prior art; This semi-penetrating semi-reflecting type liquid crystal displaying device has a plurality of reflector elements; Can form than the electric field a little less than the penetrating region in this echo area; And then the angle of the liquid crystal molecule of this echo area rotation is little than penetrating region, and the optical path difference that light forms after liquid crystal layer is passed for the second time in this echo area is substantially equal to the optical path difference that after this penetrating region passes liquid crystal layer for the first time, forms, and then makes this semi-penetrating semi-reflecting type liquid crystal displaying device when showing same picture; The echo area is identical with GTG or color that penetrating region is shown, and display quality is preferable.In addition, because this semi-penetrating semi-reflecting type liquid crystal displaying device need not be provided with projection, so its manufacturing process is comparatively simple.
Description of drawings
Fig. 1 is the diagrammatic cross-section of a kind of semi-penetrating semi-reflecting type liquid crystal displaying device of prior art.
Fig. 2 is the floor map of semi-penetrating semi-reflecting type liquid crystal displaying device first embodiment of the present invention.
Fig. 3 is the section enlarged diagram along III-III line shown in Figure 2.
Fig. 4 is the floor map of semi-penetrating semi-reflecting type liquid crystal displaying device second embodiment of the present invention.
Fig. 5 is the section enlarged diagram along V-V line among Fig. 4
Embodiment
Please consult Fig. 2 and Fig. 3 in the lump, Fig. 2 is the floor map of semi-penetrating semi-reflecting type liquid crystal displaying device first embodiment of the present invention, and Fig. 3 is the section enlarged diagram along III-III line shown in Figure 2.This semi-penetrating semi-reflecting type liquid crystal displaying device 2 comprises a thin film transistor base plate (thin film transistor substrate) 100, one colored filter substrates (color filter sub strate) 200 and one liquid crystal layer 300.This thin film transistor base plate 100 and these colored filter substrate 200 parallel being oppositely arranged.This liquid crystal layer 300 is clipped between this thin film transistor base plate 100 and this colored filter substrate 200.
This thin film transistor base plate 100 comprises one first substrate 180; Many sweep trace 172, grid 170 and the public electrodes 171 that are arranged on these first substrate, 180 contiguous these liquid crystal layer 300 1 sides; One covers first insulation course 160 of this sweep trace 172, this public electrode 171 and this first substrate 180 of part; One is arranged on the semiconductor layer 150 of these first insulation course, 160 subregions and contiguous these liquid crystal layer 300 1 sides; The source/drain 141 of this semiconductor layer 150 of a plurality of cover parts and this first insulation course 160 of part; A plurality of data lines 173 and capacitance electrode 142 that are arranged on these first insulation course, 160 contiguous these liquid crystal layer 300 1 sides; One covers second insulation course 130 of this source/drain 141, this capacitance electrode 142, this semiconductor layer 150 of part, this first insulation course 160 of part; A plurality of first through electrodes 121 that are arranged on these second insulation course, 130 contiguous these liquid crystal layer 300 1 sides are close to these liquid crystal layers 300 with reflector element 122, one and cover first alignment film 110 of this first through electrode 121, reflector element 122 and this second insulation course 130 of part.
This sweep trace 172 is parallel to each other and is provided with at interval, and each public electrode 171 is set in parallel between two adjacent scanning lines 172.This data line 173 is parallel to each other, and the interval is provided with and insulate vertical with this sweep trace 172.This grid 170, this source/drain 141; This semiconductor layer 150 constitutes a plurality of thin film transistor (TFT)s (not indicating); Each thin film transistor (TFT) is positioned at sweep trace 172 and data line 173 intersections; And its grid 170 is electrically connected with sweep trace 172, and source electrode 141 is electrically connected with data line 173, and drain electrode 141 is electrically connected with this first through electrode 121 through one first through holes 131 in this second insulation course 130.This first through electrode 121 is electrically connected with this capacitance electrode 142 through one second through hole 132 in this second insulation course 130.This reflector element 122 insulate mutually with above-mentioned other conducting element with this first through electrode 121 and does not contact, i.e. these reflector element 122 electrical suspension joints (electricallyfloating).This first through electrode 121 adopts transparent conductive materials to form, as tin indium oxide (Indium Tin Oxide, ITO) or indium zinc oxide (Indium Zinc Oxide, IZO).This reflector element 122 adopts the metal material with high reflectance to form, like aluminium, silver.
This sweep trace 172 intersects a plurality of pixel regions of definition (not indicating) with data line 173; Each pixel region is made up of two adjacent sweep traces 172 and 173 regions of two data lines; It comprises a thin film transistor (TFT), one first through electrode 121, a plurality of reflector elements 122 and one and the overlapping capacitance electrode 142 of part public electrode 171.In each pixel region, the both sides of this first through electrode 121 comprise the different and symmetrically arranged rectangular aperture 1211 of a plurality of areas.One reflector element 122 more smaller than this rectangular aperture 1211 is set in each rectangular aperture 1211, and reflector element 122 and this first through electrode 121 non-overlapping copies mutually.Wherein at least one (among the figure being two) reflector element 122 is overlapped with this capacitance electrode 142.Wherein, the interval width W1 between a reflector element 122 and this first through electrode 121 is greater than the interval width W2 between another reflector element 122 and this first through electrode 121.The position of reflector element 122 in opening of at least two opening 1211 correspondences is different.
This thin film transistor base plate 100 comprises and comprises that further one is arranged on first polaroid (polarizer) 190 of this first substrate 180 away from these liquid crystal layer 300 1 sides.
This colored filter substrate 200 comprises one second substrate 280; One is arranged on second polaroid 290 of this second substrate 280 away from these liquid crystal layer 300 1 sides; One is arranged on second alignment film 210 that this second substrate 280 is close to second through electrode, 221, one contiguous these liquid crystal layers 300 of these liquid crystal layer 300 1 sides and covers this second through electrode 221.
For the ease of describing, the zone that defines these first through electrode, 121 places is penetrating region T, and the zone at these reflector element 122 places is reflector space R.Because being provided with, this thin film transistor base plate 100 is positioned at this first through electrode 121 of one deck and the reflector element 122 of this suspension joint; When gray scale voltage is applied to this first through electrode 121 via data line 173 and thin film transistor (TFT); Can form than the electric field a little less than the penetrating region T by R in this echo area, and then the angle of the liquid crystal molecule of this echo area R rotation is little than penetrating region T.Therefore; R passes the optical path difference that the optical path difference that forms behind the liquid crystal layer 130 is substantially equal to formation after this penetrating region T passes liquid crystal layer 130 for the first time to light for the second time in this echo area; And then make this semi-penetrating semi-reflecting type liquid crystal displaying device 2 when showing same picture; Echo area R is identical with GTG or color that penetrating region T is shown, and display quality is preferable.And this semi-penetrating semi-reflecting type liquid crystal displaying device 2 need not projection be set so that echo area R is different with the thickness of liquid crystal layer of penetrating region T, so its manufacturing process is comparatively simple.
In addition, because each pixel region comprises a plurality of separate and reflector elements 122 that area does not wait, the electric field of 122 corresponding reflector space R of this difference reflector element also has difference.So, the anglec of rotation of the liquid crystal molecule in this difference reflector space R also has difference, makes a plurality of reflector space R form the effect that multiple domain shows, and then can increase the visible angle of this semi-penetrating semi-reflecting type liquid crystal displaying device 2.
Please consult Fig. 4 and Fig. 5 in the lump, Fig. 4 is the floor map of semi-penetrating semi-reflecting type liquid crystal displaying device second embodiment of the present invention, and Fig. 5 is the section enlarged diagram along V-V line among Fig. 4.This semi-penetrating semi-reflecting type liquid crystal displaying device 3 comprises a thin film transistor base plate 400, one colored filter substrates 500 and a liquid crystal layer 600.This thin film transistor base plate 400 and these colored filter substrate 500 parallel being oppositely arranged.This liquid crystal layer 600 is clipped between this thin film transistor base plate 400 and this colored filter substrate 500.
This thin film transistor base plate 400 comprises one first substrate 480; Many sweep trace 472, grid 470 and the public electrodes 471 that are arranged on these first substrate, 480 contiguous these liquid crystal layer 600 1 sides; One covers first insulation course 460 of this sweep trace 472, public electrode 471 and this first substrate 480 of part; One is arranged on the semiconductor layer 450 of these first insulation course, 460 subregions and contiguous these liquid crystal layer 600 1 sides; The source/drain 441 of this semiconductor layer 450 of a plurality of cover parts and this first insulation course 460 of part; A plurality of data lines 473 and capacitance electrode 442 that are arranged on these first insulation course, 460 contiguous these liquid crystal layer 600 1 sides; One covers second insulation course 430 of this source/drain 441, this data line 473, this capacitance electrode 442, this semiconductor layer 450 of part, this first insulation course 460 of part, and a plurality of first through electrodes 421, that are arranged on these second insulation course, 430 contiguous these liquid crystal layer 600 1 sides cover the 3rd insulation course 431 of this first through electrode 421 and this second insulation course 430 of part; A plurality of reflector elements 422, are close to these liquid crystal layers 600 and cover first alignment film 410 of the 3rd insulation course 431 and this reflector element 422.
This sweep trace 472 is parallel to each other and is provided with at interval, and each public electrode 471 is set in parallel between two adjacent scanning lines 472.This data line 473 is parallel to each other, and the interval is provided with and insulate vertical with this sweep trace 472.This grid 470, this source/drain 441; This semiconductor layer 450 constitutes a plurality of thin film transistor (TFT)s (not indicating); Each thin film transistor (TFT) is positioned at sweep trace 472 and data line 473 intersections; And its grid 470 is electrically connected with sweep trace 472, and source electrode 441 is electrically connected with data line 473, and drain electrode 441 is electrically connected with this first through electrode 421 through one first through holes 431 in this second insulation course 430.This first through electrode 421 is electrically connected with this capacitance electrode 442 through one second through hole 432 in this second insulation course 430.This reflector element 422 insulate with this first through electrode 421, thin film transistor (TFT) and above-mentioned other conducting element mutually, i.e. these reflector element 422 electrical suspension joints.This first through electrode 421 adopts transparent conductive material to form, like tin indium oxide or indium zinc oxide.This reflector element 422 adopts the metal material with high reflectance to form, like aluminium, silver.
This sweep trace 472 intersects a plurality of pixel regions of definition (not indicating) with data line 473; Each pixel region is made up of two adjacent sweep traces 472 and 473 regions of two data lines; It comprises a thin film transistor (TFT), one first through electrode 421, a plurality of reflector elements 422 and a capacitance electrode 442.In each pixel region, the both sides of this first through electrode 421 comprise the different and symmetrically arranged rectangular aperture 4211 of a plurality of areas.Each rectangular aperture 4211 place is provided with a reflector element 422 more bigger than this rectangular aperture 4211, and these reflector element 422 edges and this first through electrode 421 are overlapping.Wherein at least one (among the figure being two) reflector element 422 is overlapped with this capacitance electrode 442.
This thin film transistor base plate 400 comprises and comprises that further one is arranged on this first substrate 480 in first polaroid 490 away from these liquid crystal layer 600 1 sides.
This colored filter substrate 500 comprises one second substrate 580; One is arranged on second polaroid 590 of this second substrate 580 away from these liquid crystal layer 600 1 sides; One is arranged on second alignment film 510 that this second substrate 580 is close to second through electrode, 521, one contiguous these liquid crystal layers 600 of these liquid crystal layer 600 1 sides and covers this second through electrode 521.
First through electrode 421 of this semi-penetrating semi-reflecting type liquid crystal displaying device 3 is located overlapping with this reflector element 422 on the edge of; Can increase the area of reflector space R; And the further distribution of the electric field of improvement between this first through electrode 421 and this reflector element 422, improve display effect.
The present invention is not limited to above-mentioned embodiment; Also other alternate embodiments can be arranged; For example: this first reflector element 122,422 and this second insulation course 130, also can further comprise a transparency conducting layer between 430; To increase the contact force of this first reflector element 122,422, this transparency conducting layer can adopt tin indium oxide or indium zinc oxide to form.In addition; The shape of this reflector element 122,422 also is not limited to rectangle; Can also be circle, semicircle or irregular polygon, the shape of the opening of this first through electrode is fitted with reflector element 122,422 mutually, to improve or to strengthen the multiple domain display effect of reflector space R.This reflector element 122,422 can also be overlapped with data line 173,473, to increase aperture opening ratio.Can overlap with sweep trace 172,472 respectively in two edges of this first through electrode 121,421, to increase aperture opening ratio.In addition, also can make the area of at least two openings identical, but the corresponding position difference of reflector element in opening of these two openings.
Claims (23)
1. semi-penetrating semi-reflecting type liquid crystal displaying device; It comprises a plurality of pixel regions; Each pixel region comprises that one is used for receiving through electrode and a plurality of electrical suspension joint and the separate reflector element of gray scale voltage; It is characterized in that: this through electrode comprises a plurality of openings, and this reflector element is to should the opening setting.
2. semi-penetrating semi-reflecting type liquid crystal displaying device as claimed in claim 1 is characterized in that: further comprise a capacitance electrode, this capacitance electrode and at least one reflector element are overlapped.
3. semi-penetrating semi-reflecting type liquid crystal displaying device as claimed in claim 1 is characterized in that: the area of at least two reflector elements is different.
4. semi-penetrating semi-reflecting type liquid crystal displaying device as claimed in claim 1 is characterized in that: the area of this reflector element is littler than corresponding opening.
5. semi-penetrating semi-reflecting type liquid crystal displaying device as claimed in claim 4 is characterized in that: this reflector element and this through electrode be non-overlapping copies mutually.
6. semi-penetrating semi-reflecting type liquid crystal displaying device as claimed in claim 5 is characterized in that: the interval width between a reflector element and this through electrode is greater than the interval width between another reflector element and this through electrode.
7. semi-penetrating semi-reflecting type liquid crystal displaying device as claimed in claim 1 is characterized in that: the area of this reflector element is bigger than corresponding opening.
8. semi-penetrating semi-reflecting type liquid crystal displaying device as claimed in claim 7 is characterized in that: this reflector element edge and this through electrode are overlapped.
9. semi-penetrating semi-reflecting type liquid crystal displaying device as claimed in claim 8 is characterized in that: further comprise an insulation course, it is between this reflector element and this through electrode.
10. semi-penetrating semi-reflecting type liquid crystal displaying device as claimed in claim 1 is characterized in that: this reflector element is rectangle, circle, semicircle or irregular polygon, and the shape of this opening is fitted with this reflector element mutually.
11. semi-penetrating semi-reflecting type liquid crystal displaying device as claimed in claim 1 is characterized in that: the area of at least two openings is different.
12. semi-penetrating semi-reflecting type liquid crystal displaying device as claimed in claim 1 is characterized in that: the position of reflector element in opening that at least two openings are corresponding is different.
13. semi-penetrating semi-reflecting type liquid crystal displaying device; It comprises a substrate; One side of this substrate comprises the vertical data line of multi-strip scanning line, many and this sweep trace insulation, a plurality of thin film transistor (TFT) and a plurality of through electrode that is electrically connected with this thin film transistor (TFT) respectively that is positioned at sweep trace and data line intersection; It is characterized in that: each through electrode correspondence is provided with a plurality of electrical suspension joints and separate reflector element; This through electrode comprises a plurality of openings, and this reflector element is to should the opening setting.
14. semi-penetrating semi-reflecting type liquid crystal displaying device as claimed in claim 13; It is characterized in that: further comprise a plurality of public electrodes; This sweep trace is parallel to each other and is provided with at interval, and this data line is parallel to each other and is provided with at interval, and each public electrode is set in parallel between two adjacent scanning lines.
15. semi-penetrating semi-reflecting type liquid crystal displaying device as claimed in claim 14 is characterized in that: it further comprises a plurality of and the overlapping capacitance electrode of this public electrode.
16. semi-penetrating semi-reflecting type liquid crystal displaying device as claimed in claim 15 is characterized in that: at least one reflector element and this capacitance electrode are overlapping.
17. semi-penetrating semi-reflecting type liquid crystal displaying device as claimed in claim 13 is characterized in that: at least one reflector element and this data line part are overlapping.
18. semi-penetrating semi-reflecting type liquid crystal displaying device as claimed in claim 13 is characterized in that: this through electrode and this sweep trace are overlapped.
19. a semi-penetrating semi-reflecting type liquid crystal displaying device, it comprises a substrate; A plurality of sweep traces that are arranged on this substrate one side; One covers first insulation course of this sweep trace and this substrate of part; One is arranged on the semiconductor layer of this first insulation course subregion; The source electrode and the drain electrode of this semiconductor layer of a plurality of cover parts and this first insulation course of part; A plurality of data line and capacitance electrodes that are arranged on this first insulation course; Second insulation course of one this source electrode of covering and drain electrode, this data line, this capacitance electrode, this semiconductor layer of part, this first insulation course of part; With a plurality of through electrode and reflector elements that are arranged on this second insulation course, it is characterized in that: each through electrode comprises a plurality of openings, and this each opening part correspondence is provided with a reflector element, the electrical suspension joint of this reflector element.
20. semi-penetrating semi-reflecting type liquid crystal displaying device as claimed in claim 19, it further comprises a transparency conducting layer, and this transparency conducting layer is between this reflector element and this second insulation course.
21. semi-penetrating semi-reflecting type liquid crystal displaying device as claimed in claim 19 is characterized in that: this second insulation course comprises a plurality of first through holes, and this through electrode is electrically connected to this drain electrode through this first through hole.
22. semi-penetrating semi-reflecting type liquid crystal displaying device as claimed in claim 19 is characterized in that: this second insulation course comprises a plurality of second through holes, and this through electrode is electrically connected to this capacitance electrode through this second through hole.
23. a semi-penetrating semi-reflecting type liquid crystal displaying device, it comprises that one first substrate, one second substrate and are clipped in the liquid crystal layer between this two substrate, and this first substrate comprises many sweep traces that are arranged on contiguous this liquid crystal layer one side of this first substrate; One covers first insulation course of this sweep trace and this first substrate of part; One is arranged on the semiconductor layer of this first insulation course subregion and contiguous this liquid crystal layer one side; The source electrode and the drain electrode of this semiconductor layer of a plurality of cover parts and this first insulation course of part; A plurality of data lines that are arranged on contiguous this liquid crystal layer one side of this first insulation course; One covers second insulation course of this source electrode and drain electrode, this semiconductor layer of part, this data line and this first insulation course of part; With a plurality of through electrode and reflector elements that are arranged on contiguous this liquid crystal layer one side of this second insulation course, it is characterized in that: each through electrode comprises a plurality of openings, and this each opening part correspondence is provided with a reflector element, the electrical suspension joint of this reflector element.
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| Application Number | Priority Date | Filing Date | Title |
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| CN200810067526A CN101592817B (en) | 2008-05-28 | 2008-05-28 | Transflective liquid crystal display (LCD) device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN200810067526A CN101592817B (en) | 2008-05-28 | 2008-05-28 | Transflective liquid crystal display (LCD) device |
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| CN101592817B true CN101592817B (en) | 2012-08-29 |
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