CN102055915B - Driving time sequence implementation method of frame transfer CCD (Charge Coupled Device) short exposure time - Google Patents
Driving time sequence implementation method of frame transfer CCD (Charge Coupled Device) short exposure time Download PDFInfo
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- CN102055915B CN102055915B CN2010105866958A CN201010586695A CN102055915B CN 102055915 B CN102055915 B CN 102055915B CN 2010105866958 A CN2010105866958 A CN 2010105866958A CN 201010586695 A CN201010586695 A CN 201010586695A CN 102055915 B CN102055915 B CN 102055915B
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Abstract
The invention relates to a driving time sequence implementation method of frame transfer CCD (Charge Coupled Device) short exposure time, belonging to the technical field of photoelectric detection. The method comprises the following steps: (1) carrying out frame transfer-charge dumping operation for many times; (2) carrying out idle exposure; (3) carrying out frame transfer; and (4) reading out frames. The invention realizes the short exposure time which is one order of magnitude smaller than the frame reading-out time by introducing the charge quick transfer-dumping operation for many times in the driving time sequence control flow without using mechanical shutters or modifying hardware circuit design. The transfer-dumping operation is carried out for many times, thereby ensuring that the charges accumulated by the exposure of the previous frame are thoroughly dumped out to avoid the data error caused by the residues of the charges in the current frame image.
Description
Technical field
The invention belongs to technical field of photoelectric detection, relate to the driving sequential implementation method of a kind of frame transfer CCD less than the short exposure time of frame readout time.
Background technology
Frame transfer CCD is made up of imaging area, memory block and horizontal readout register three parts.Common driving sequential comprises three phases in a frame period: frame transfer, frame are read and idle exposure.In the frame transfer stage; Through the control frame shifted clock signal electric charge of imaging area exposure accumulation is transferred to the memory block apace; Memory block and horizontal readout register get into frame and read state subsequently, and imaging area then gets into exposure status once more, until frame transfer next time.Read the stage at frame, earlier control row shifted clock signal is transferred to horizontal readout register with delegation's electric charge is capable, and signal such as controlling level readout clock is read the pixel electric charge one by one again, so back and forth, is all read until whole pixels.After running through a frame, if the time for exposure of imaging area does not also arrive, then CCD gets into idle exposure stage, and all clock signals keep original level constant.
Present most of CCD relies on frame transfer to realize the reset operation to imaging area, and the time interval between twice frame transfer is exactly the time for exposure, so minimum exposure time promptly is to read the needed time of a frame fully in common method.
In order to realize less than the frame short exposure time of readout time, can resemble full frame and shift the mechanical shutter that uses of CCD, system configuration is complicated, the reliability reduction but this will cause.
Summary of the invention
Shift CCD and can't realize maybe need using mechanical shutter could realize problem in order to solve normal frames in the prior art, the invention provides a kind of driving sequential implementation method of frame transfer CCD short exposure time less than the short exposure time of frame readout time.
The technical scheme that technical solution problem of the present invention is adopted is:
The driving sequential implementation method of frame transfer CCD short exposure time comprises the steps:
The first step: the control frame shifted clock signal is transferred to the memory block fast with the electric charge of imaging area exposure accumulation;
Second step: control row transfering clock, horizontal readout clock, read reset clock and electric charge and topple over the gate clock signal and will transfer to the electric charge of memory block and transfer to horizontal readout register line by line, accomplish toppling over fast of electric charge; This moment, imaging area was at the exposure stored charge;
The 3rd step: repeat the first step and second step repeatedly (suggestion more than 8 times), electric charge in imaging area exposure accumulation is fully shifted and topple over and;
The 4th step: electric charge is toppled over when finishing; The time for exposure of imaging area promptly is that an electric charge is toppled over the used time, if the imaging area time for exposure that needs also is less than, then CCD gets into idle exposure status; All clock control signals remain unchanged, and finish until the time for exposure;
The 5th step: the control frame shifted clock signal is transferred to the memory block apace with the electric charge of imaging area exposure accumulation;
The 6th step: control row shifted clock signal is transferred to horizontal readout register with delegation's electric charge is capable earlier, again the controlling level readout clock with read reset clock signal the pixel electric charge read one by one; So back and forth, all read until the pixel of all row.
The invention has the beneficial effects as follows: electric charge shifts fast through in driving the SECO flow process, introducing repeatedly-operation toppled over, realized the short exposure time than frame little one magnitude readout time; Repeatedly shift-topple over the electric charge that has guaranteed previous frame exposure accumulation and toppled over up hill and dale, thereby can residually in current frame image, not cause error in data.
Description of drawings
Fig. 1 is the driving SECO flow chart of short exposure time of the present invention.
Fig. 2 is that the CCD57-10 electric charge of one embodiment of the invention is toppled over driving sequential sketch map.
Fig. 3 is the driving sequential sketch map that CCD57-1030ms time for exposure 8 electric charges of one embodiment of the invention are toppled over.
Fig. 4 is the imaging effect figure that CCD57-1030ms time for exposure 1 electric charge is toppled over.
Fig. 5 is the imaging effect figure that CCD57-1030ms time for exposure 8 electric charges are toppled over.
Embodiment
Through accompanying drawing and specific embodiment the present invention is done further explain below, but should not limit protection scope of the present invention with this.
As shown in Figure 2, the driving SECO flow process that electric charge of CCD57-10 type frame transfer CCD realization is toppled over is following:
1) control row transfering clock ccd_st1, ccd_st2 and ccd_st3 with the electric charge of memory block to horizontal readout register vertical transitions delegation; Horizontal readout clock ccd_r1, ccd_r2 and ccd_r3 keep high level, high level and low level constant respectively; Read reset clock ccd_rst and keep high level; Electric charge is toppled over gate clock ccd_dg and is initially low level, becomes high level behind the 18 μ s;
2) repeating step 1) topple over 528 row electric charges altogether, during electric charge topple over gate clock ccd_dg and remain high level;
3) going transfering clock ccd_st1, ccd_st2 and ccd_st3 keeps low level; Horizontal readout clock ccd_r1 and ccd_r2 are initially high level, become low level behind the 9 μ s, keep becoming high level again behind the low level 18 μ s, and ccd_r3 remains low level; Read reset clock ccd_rst and keep high level; Electric charge is toppled over gate clock ccd_dg and is initially high level, becomes low level behind the 18 μ s.
As shown in Figure 3, it is following that CCD57-10 realizes that the frame of 30ms time for exposure drives the SECO flow process:
1) control frame shifted clock signal ccd_im1, ccd_im2, ccd_im3, ccd_st1, ccd_st2 and ccd_st3 transfer to the memory block, time spent 2.68ms apace with the electric charge of imaging area exposure accumulation;
2) control row transfering clock ccd_st1, ccd_st2, ccd_st3; Horizontal readout clock ccd_r1, ccd_r2, ccd r3; Reading reset clock ccd_rst and electric charge topples over the electric charge that gate clock ccd_dg will transfer to the memory block and transfers to horizontal readout register line by line; And topple over time spent 19.04ms fast; Imaging area is at the exposure stored charge at this moment, and 19.04ms is exactly a minimum exposure time;
3) repeated execution of steps 1), 2) totally 8 times, fully shifted and topple over and to guarantee before electric charge in imaging area exposure accumulation, minimum exposure time is the time 19.04ms that last electric charge is toppled over;
4) CCD gets into idle exposure status, and all clock control signals keep original level constant, and behind the 10.96ms, the time for exposure of 30ms finishes;
5) control frame shifted clock signal ccd_im1, ccd_im2, ccd_im3, ccd_st1, ccd_st2 and ccd_st3 transfer to the memory block, time spent 2.68ms apace with the electric charge of imaging area exposure accumulation;
6) control row shifted clock signal ccd_st1, ccd_st2 and ccd_st3 transfer to horizontal readout register with delegation's electric charge is capable earlier, again controlling level readout clock ccd_r1, ccd_r2, ccd_r3 and read reset clock ccd_rst the pixel electric charge is read one by one;
7) repeating step 6) read altogether 528 the row view data, 536 effective pixels of every row, 24 mute pixels; Read a two field picture and need 163.06ms.
In sum, CCD57-10 frame 163.06ms readout time, the electric charge dumping time is minimum exposure time 19.04ms, has only 1/8 of readout time.Utilize the imaging effect of the inventive method as shown in Figure 5.
As shown in Figure 4, it is not thorough that electric charge is toppled over, and it is residual in the next frame image to have a large amount of electric charges, and this will make data make a mistake, and can't proofread and correct.Method of the present invention is carried out repeatedly " frame transfer-electric charge is toppled over " operation, has guaranteed that the electric charge of previous frame exposure accumulation is toppled over to fall up hill and dale; Simultaneously, electric charge was toppled over the used time after minimum exposure time remained last frame transfer.
Claims (2)
1. the driving sequential implementation method of frame transfer CCD short exposure time comprises the steps:
The first step: the control frame shifted clock signal is transferred to the memory block fast with the electric charge of imaging area exposure accumulation;
Second step: control row transfering clock, horizontal readout clock, read reset clock and electric charge and topple over the gate clock signal and will transfer to the electric charge of memory block and transfer to horizontal readout register line by line, accomplish toppling over fast of electric charge;
The 3rd step: repeat the first step and second step repeatedly, electric charge in imaging area exposure accumulation is fully shifted and topple over and;
The 4th step: electric charge is toppled over when finishing, if the imaging area time for exposure that needs also is less than, then CCD gets into idle exposure status, and all clock control signals remain unchanged, and finish until the time for exposure;
The 5th step: the control frame shifted clock signal is transferred to the memory block apace with the electric charge of imaging area exposure accumulation;
The 6th step: control row shifted clock signal is transferred to horizontal readout register with delegation's electric charge is capable earlier, again the controlling level readout clock with read reset clock signal the pixel electric charge read one by one; So back and forth, all read until the pixel of all row.
2. the driving sequential implementation method of frame transfer CCD short exposure time as claimed in claim 1 is characterized in that, in said the 3rd step repeatedly is at least 8 times.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104486556A (en) * | 2014-12-19 | 2015-04-01 | 中国科学院长春光学精密机械与物理研究所 | Realization method of frame transfer CCD (Charge Coupled Device) electronic shutter |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103108138B (en) * | 2013-02-27 | 2015-08-05 | 中国兵器工业集团第二一四研究所苏州研发中心 | Charge inducing accumulation is adopted to realize the method for area array CCD fast driving |
| CN104486563B (en) * | 2014-12-19 | 2017-10-31 | 中国科学院长春光学精密机械与物理研究所 | The electrically charged frame transfer CCD time for exposure for toppling over function is as short as zero implementation method |
| CN105611197B (en) * | 2015-12-23 | 2018-08-17 | 中国科学院长春光学精密机械与物理研究所 | The anti-saturation reading method of nonreactive overflow-resisting function frame transfer CCD |
| CN110730317B (en) * | 2018-07-16 | 2021-10-12 | 上海箩箕技术有限公司 | Area array sensor and forming method and working method thereof |
| CN112383726B (en) * | 2020-10-30 | 2021-07-23 | 厦门大学 | CCD high-speed signal acquisition method and device |
| CN113938623B (en) * | 2021-09-27 | 2024-01-23 | 中国电子科技集团公司第四十四研究所 | Frame transfer CCD with quasi-pixel exposure control structure |
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| JP3997195B2 (en) * | 2003-11-20 | 2007-10-24 | キヤノン株式会社 | Image input apparatus and control method thereof |
| JP4984981B2 (en) * | 2007-03-08 | 2012-07-25 | ソニー株式会社 | Imaging method, imaging apparatus, and driving apparatus |
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| CN1719876A (en) * | 2005-06-07 | 2006-01-11 | 清华大学 | High-speed charge coupled sensor driver |
| CN101719995A (en) * | 2009-11-25 | 2010-06-02 | 西北核技术研究所 | Image acquisition method capable of improving frame rate of CCD |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104486556A (en) * | 2014-12-19 | 2015-04-01 | 中国科学院长春光学精密机械与物理研究所 | Realization method of frame transfer CCD (Charge Coupled Device) electronic shutter |
| CN104486556B (en) * | 2014-12-19 | 2018-01-05 | 中国科学院长春光学精密机械与物理研究所 | A kind of implementation method of frame transfer CCD electronic shutters |
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