CN102054908A - Polarized light emitting diode assembly and manufacturing method thereof - Google Patents
Polarized light emitting diode assembly and manufacturing method thereof Download PDFInfo
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- CN102054908A CN102054908A CN2009102075995A CN200910207599A CN102054908A CN 102054908 A CN102054908 A CN 102054908A CN 2009102075995 A CN2009102075995 A CN 2009102075995A CN 200910207599 A CN200910207599 A CN 200910207599A CN 102054908 A CN102054908 A CN 102054908A
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Abstract
The invention discloses a polarized light emitting diode (LED) assembly and a manufacturing method thereof. The LED assembly comprises a pedestal, an LED chip, a polarized light waveguide structure and an encapsulation material; the LED chip is arranged on the pedestal, the LED chip is provided with a first light emitting surface, and the light emitted by the LED chip is output by the first light emitting surface; the polarized light waveguide structure consists of a polarized light layer, a reflective layer, a conversion layer and a euphotic layer; the polarized light waveguide structure is arranged on the light output path of the LED chip; and the encapsulation material is used for encapsulating the polarized light waveguide structure, the LED chip and the pedestal into a whole. The LED assembly can guide and convert a light source and convert the polarized reclaimed reflective light at the same time so as to improve the polarization efficiency and improve the utilization efficiency of the whole energy.
Description
Technical field
The present invention relates to a kind of light-emitting diode, particularly a kind of polarisation (polarized light) light-emitting diode component and manufacture method thereof.
Background technology
In natural daylight, its electric and magnetic oscillation direction has from all directions, if vibration only occurs in the plane, is referred to as polarisation (polarized light).General light can be made up of the polarisation of P and S two vertical vibration directions, and can filter the polarisation of one of them direction by polarizer (polarizer), and the polarisation of another direction is passed through.
Application facet, polarisation are used in daily life already widely, as in fields such as anti-dazzle illumination, projector and displays.With present market visible a kind of " anti-dazzle desk lamp " is example, uses fluorescent tube collocation optical multilayer, filters the polarisation that causes dazzle, optical efficiency is about 50～60%, and other is used, as the polarizer of LCD, must high-purity the occasion of polarisation, efficient only about 40%.
And along with shortage of energy sources, for environmental protection and energy-conservation subject under discussion, more and more come into one's own, except changing with comparatively energy-conservation light-emitting diode as the light source, requirement for the optical efficiency of illuminator also improves thereupon, because P and S polarisation respectively account for half in natural daylight, if use traditional absorption polarizer, will consume the energy above 50%, how promoting the polarisation component efficiency is key issue.
LED source produces the mode of polarisation, and can be divided into two classes: (1) places polarizer on light-emitting diode chip for backlight unit, and (2) install patents such as polarizer on LED package.
For example U.S. Pat 20060091412 (Polarized LED) proposes a kind of technology that the reflecting type polarizing device is installed on light-emitting diode chip for backlight unit, the P of two polar biased directions and S polarisation in the light, wherein the P polarisation can penetrate this polarizer, after the S polarisation then can reflect quarter wave plate by the below, reflect away again, owing to will can make the S polarisation become the P polarisation, and then pass through polarizer through the conversion of 2 quarter wave plates.By this reclaim mechanism, though can promote the polar biased conversion efficiency,, therefore will cause the absorbed chance of light because the S polarisation must be got back to chip and blaze abroad, reduce luminous efficiency.
U.S. Pat 7495375 (Polarized light emitting device) for another example, notion at package surface device polarizer is also proposed, it is positioned over light-emitting diode chip for backlight unit in the reflector of encapsulation, and in cup, fill up fluorescent material, in outlet polarizer (polarizer) is installed at last.Because the light of reflection can be got back to fluorescent material and chip, outwards propagate by reflector again, therefore also can cause the absorbed chance of light, reduce luminous efficiency.
TaiWan, China patent M287408 and for example, patent name are " light-emitting diode that produces polarization light ", and it is on the LED package surface, or chip surface is provided with the polarizing layer of polarisation material, and this material can utilize modes such as attaching, plated film to be provided with.Owing to be to utilize absorbed, thereby theoretical polar biased most effective only 50%.
With regard to above-mentioned existing patent as can be known, though its purpose all is at polarisation utilization or recycling, effect is still not good.
Summary of the invention
Technical problem to be solved by this invention provides a kind of polarisation light-emitting diode component and manufacture method thereof, can guide and change at light source, and change polar biased simultaneously and reclaim reflection ray, and polar biased efficient is improved, and improves whole efficiency of energy utilization.
To achieve these goals, the invention provides a kind of polarisation light-emitting diode component, wherein, comprise:
One pedestal;
One light-emitting diode chip for backlight unit is arranged on this pedestal, and this light-emitting diode chip for backlight unit has one first exiting surface, and this light-emitting diode chip for backlight unit can emit beam by this first exiting surface output;
At least one polarisation waveguiding structure is made of a polarizing layer, a reflector and a conversion layer, and this polarisation waveguiding structure is arranged on the light outgoing route of this light-emitting diode chip for backlight unit; And
One encapsulating material is in order to be packaged as a whole this polarisation waveguiding structure, this light-emitting diode chip for backlight unit and this pedestal.
Above-mentioned polarisation light-emitting diode component, wherein, described polarizing layer has nano metal wiregrating, the multilayer optical plated film (multilayer optical film) of polarisation centrifugation or the polarization spectrum groupware made from light birefringent material (birefringent material) combination.
Above-mentioned polarisation light-emitting diode component, wherein, described polarizing layer is a plane.
Above-mentioned polarisation light-emitting diode component, wherein, first exiting surface of described polarizing layer and this light-emitting diode chip for backlight unit has an angle, and this angle is less than 90 degree.
Above-mentioned polarisation light-emitting diode component, wherein, described polarizing layer is a curved surface.
Above-mentioned polarisation light-emitting diode component, wherein, described polarizing layer is a convex globoidal, and this convex globoidal is towards this light-emitting diode chip for backlight unit, and has an angle of contingence with first exiting surface of this light-emitting diode chip for backlight unit.
Above-mentioned polarisation light-emitting diode component, wherein, described polarizing layer is a cancave cambered surface, and this cancave cambered surface is towards this light-emitting diode chip for backlight unit, and has an angle of contingence with first exiting surface of this light-emitting diode chip for backlight unit.
Above-mentioned polarisation light-emitting diode component, wherein, described reflector is metal or the nonmetal plated film with reverberation effect.
Above-mentioned polarisation light-emitting diode component, wherein, described reflector is a plane.
Above-mentioned polarisation light-emitting diode component, wherein, first exiting surface of described reflector and this light-emitting diode chip for backlight unit has certain angle, and this angle is greater than 0 degree and less than 180 degree.
Above-mentioned polarisation light-emitting diode component, wherein, described reflector is a curved surface.
Above-mentioned polarisation light-emitting diode component, wherein, described reflector is a convex globoidal, and this convex globoidal is towards this light-emitting diode chip for backlight unit, and has an angle of contingence with first exiting surface of this light-emitting diode chip for backlight unit.
Above-mentioned polarisation light-emitting diode component, wherein, described reflector is a cancave cambered surface, and this cancave cambered surface is towards this light-emitting diode chip for backlight unit, and has an angle of contingence with first exiting surface of this light-emitting diode chip for backlight unit.
Above-mentioned polarisation light-emitting diode component, wherein, described conversion layer is 1/1st phase delay device (phase retarder).
Above-mentioned polarisation light-emitting diode component, wherein, first exiting surface of described second exiting surface and this light-emitting diode chip for backlight unit has an angle, and this angle is not equal to 90 degree.
Above-mentioned polarisation light-emitting diode component, wherein, described polarisation waveguiding structure also comprises a photic zone, this photic zone has one first, one second, one incidence surface and one second exiting surface, this polarizing layer are arranged at this first, and this reflector is arranged at this second, this conversion layer is arranged at this second exiting surface, and this incidence surface is towards first exiting surface of this light-emitting diode chip for backlight unit; After the light that this light-emitting diode chip for backlight unit sent is exported by this first exiting surface, can inject this photic zone and be projeced into this polarizing layer by this euphotic incidence surface, by this polarizing layer part light is reflexed to this reflector again, by this reflector light is reflexed to this second exiting surface again, penetrate this polarisation waveguiding structure by this conversion layer again.
Above-mentioned polarisation light-emitting diode component, wherein, described photic zone can be the acrylic or the encapsulation hot setting glue (thermosetting resin) of printing opacity.
Above-mentioned polarisation light-emitting diode component, wherein, described polarizing layer is arranged on this photic zone with nano impression (nanoimprint), deposition plating or coating technique.
Above-mentioned polarisation light-emitting diode component, wherein, described reflector is arranged on this photic zone with depositional mode.
Above-mentioned polarisation light-emitting diode component, wherein, described conversion layer is attached on this photic zone.
Above-mentioned polarisation light-emitting diode component wherein, is arranged with two groups of polarisation waveguiding structures.
In order to realize above-mentioned purpose better, the present invention also provides a kind of manufacture method of polarisation light-emitting diode component, wherein, comprises:
Purchase a light-emitting diode chip for backlight unit, this light-emitting diode chip for backlight unit is arranged on the pedestal, and this light-emitting diode chip for backlight unit has one first exiting surface, and this light-emitting diode chip for backlight unit can emit beam by this first exiting surface output;
Purchase a photic zone, this photic zone has relative first and one second;
At this euphotic first polarizing layer is set, the reflector is set at this euphotic second;
The photic zone that is provided with polarizing layer and reflector is cut, form at least one polarisation waveguiding structure semi-finished product, the half-finished wherein one side of this polarisation waveguiding structure is a polarizing layer, another side is the reflector relatively, and an incidence surface and one second exiting surface, this incidence surface is relative two sides with this second exiting surface, and this incidence surface and second exiting surface are located between this polarizing layer and this reflector;
At half-finished second exiting surface of this polarisation waveguiding structure one conversion layer is set, forms a polarisation waveguiding structure; And
Utilize encapsulating material that this polarisation waveguiding structure and this light-emitting diode chip for backlight unit and this pedestal are packaged as a whole, this incidence surface is towards this first exiting surface, after the light that this light-emitting diode chip for backlight unit sent is exported by this first exiting surface, can inject this photic zone and be projeced into this polarizing layer by this euphotic incidence surface, by this polarizing layer part light is reflexed to this reflector again, by this reflector light is reflexed to this second exiting surface again, penetrate this polarisation waveguiding structure by this conversion layer again.
The manufacture method of above-mentioned polarisation light-emitting diode component, wherein, described polarizing layer is arranged at this euphotic first with nano impression (nanoimprint), deposition plating or coating technique.
The manufacture method of above-mentioned polarisation light-emitting diode component, wherein, described reflector is arranged at this euphotic second with depositional mode.
The manufacture method of above-mentioned polarisation light-emitting diode component, wherein, described conversion layer is attached on this photic zone.
The manufacture method of above-mentioned polarisation light-emitting diode component, wherein, described polarizing layer has nano metal wiregrating, the multilayer optical plated film (multilayer optical film) of polarisation centrifugation or the polarization spectrum groupware made from light birefringent material (birefringent material) combination.
The manufacture method of above-mentioned polarisation light-emitting diode component, wherein, described euphotic first is a plane.
The manufacture method of above-mentioned polarisation light-emitting diode component, wherein, described euphotic first is a curved surface.
The manufacture method of above-mentioned polarisation light-emitting diode component, wherein, described euphotic first is a convex globoidal.
The manufacture method of above-mentioned polarisation light-emitting diode component, wherein, described euphotic first is a cancave cambered surface.
The manufacture method of above-mentioned polarisation light-emitting diode component, wherein, described reflector is metal or the nonmetal plated film with reverberation effect.
The manufacture method of above-mentioned polarisation light-emitting diode component, wherein, described euphotic second is a plane.
The manufacture method of above-mentioned polarisation light-emitting diode component, wherein, described euphotic second is a curved surface.
The manufacture method of above-mentioned polarisation light-emitting diode component, wherein, described euphotic second is a convex globoidal.
The manufacture method of above-mentioned polarisation light-emitting diode component, wherein, described euphotic second is a cancave cambered surface.
The manufacture method of above-mentioned polarisation light-emitting diode component, wherein, described conversion layer is 1/1st phase delay device (phase retarder).
In order to realize above-mentioned purpose better, the present invention also provides a kind of manufacture method of polarisation light-emitting diode component, wherein, comprises:
Purchase a light-emitting diode chip for backlight unit, this light-emitting diode chip for backlight unit is arranged on the pedestal, and this light-emitting diode chip for backlight unit has one first exiting surface, and this light-emitting diode chip for backlight unit can emit beam by this first exiting surface output;
Purchase a polarizing layer, a reflector and a conversion layer, enclose the photic zone that forms a spatial form jointly by this polarizing layer, reflector and conversion layer and this light-emitting diode chip for backlight unit, this photic zone has relative first and one second;
Be provided with this polarizing layer at this euphotic first face, be provided with this reflector at this euphotic second face, and this photic zone has an incidence surface and one second exiting surface, this incidence surface is relative two sides with this second exiting surface, and this incidence surface and second exiting surface are located between this polarizing layer and this reflector, and this second exiting surface is provided with this conversion layer; And
Utilize encapsulating material that this polarizing layer, reflector, conversion layer and this light-emitting diode chip for backlight unit and this pedestal are packaged as a whole, this euphotic incidence surface is towards this first exiting surface, after the light that this light-emitting diode chip for backlight unit sent is exported by this first exiting surface, can inject this photic zone and be projeced into this polarizing layer by this euphotic incidence surface, by this polarizing layer part light is reflexed to this reflector again, by this reflector light is reflexed to this second exiting surface again, penetrate by this conversion layer again.
The manufacture method of above-mentioned polarisation light-emitting diode component, wherein, described polarizing layer is nano metal wiregrating, multilayer optical plated film (multilayer optical film) with polarisation centrifugation or the polarization spectrum groupware made from light birefringent material (birefringent material) combination.
The manufacture method of above-mentioned polarisation light-emitting diode component, wherein, described euphotic first is a plane.
The manufacture method of above-mentioned polarisation light-emitting diode component, wherein, described euphotic first is a curved surface.
The manufacture method of above-mentioned polarisation light-emitting diode component, wherein, described euphotic first is a convex globoidal.
The manufacture method of above-mentioned polarisation light-emitting diode component, wherein, described euphotic first is a cancave cambered surface.
The manufacture method of above-mentioned polarisation light-emitting diode component, wherein, described reflector is metal or the nonmetal plated film with reverberation effect.
The manufacture method of above-mentioned polarisation light-emitting diode component, wherein, described euphotic second is a plane.
The manufacture method of above-mentioned polarisation light-emitting diode component, wherein, described euphotic second is a curved surface.
The manufacture method of above-mentioned polarisation light-emitting diode component, wherein, described euphotic second is a convex globoidal.
The manufacture method of above-mentioned polarisation light-emitting diode component, wherein, described euphotic second is a cancave cambered surface.
The manufacture method of above-mentioned polarisation light-emitting diode component, wherein, described conversion layer is 1/1st phase delay device (phase retarder).
Technique effect of the present invention is: polarisation light-emitting diode component of the present invention and manufacture method thereof, by being combined with polarizing layer, reflector and polarisation waveguiding structure that conversion layer constituted, can guide and change at light source, and change polar biased simultaneously and reclaim reflection ray, polar biased efficient is brought up to more than 75%, improved whole efficiency of energy utilization.
Describe the present invention below in conjunction with the drawings and specific embodiments, but not as a limitation of the invention.
Description of drawings
The embodiment cross-sectional view of Fig. 1 polarisation light-emitting diode component of the present invention;
The schematic diagram of fabrication technology of Fig. 2～Fig. 6 polarisation waveguiding structure of the present invention;
Fig. 7 polarisation waveguiding structure of the present invention is in conjunction with light-emitting diode chip for backlight unit and the structural representation that encapsulates;
Fig. 8 polarisation waveguiding structure of the present invention is in conjunction with another example structure schematic diagram of light-emitting diode chip for backlight unit;
The graph of a relation of Fig. 9 P polarisation of the present invention penetrance and incident angle;
The graph of a relation of Figure 10 S polarisation of the present invention penetrance and incident angle;
The polarizing layer of Figure 11 polarisation light-emitting diode component of the present invention and light-emitting diode chip for backlight unit exiting surface angle are the example structure schematic diagram of 30 degree;
The light shape simulation drawing of Figure 12 Figure 11 embodiment;
Figure 13 polarisation light-emitting diode component of the present invention is symmetrical arranged two polarisation waveguiding structures, and its polarizing layer and light-emitting diode chip for backlight unit exiting surface angle are the example structure schematic diagrames of 30 degree;
The light shape simulation drawing of Figure 14 Figure 13 embodiment;
Figure 15 polarisation light-emitting diode component of the present invention is symmetrical arranged two polarisation waveguiding structures, and its polarizing layer and light-emitting diode chip for backlight unit exiting surface angle are the example structure schematic diagrames of 40 degree;
The light shape simulation drawing of Figure 16 Figure 15 embodiment;
Figure 17 polarisation light-emitting diode component of the present invention is symmetrical arranged two polarisation waveguiding structures, and its polarizing layer and reflector are the example structure schematic diagram of curved surface;
The light shape simulation drawing of Figure 18 Figure 17 embodiment;
Figure 19 polarisation light-emitting diode component of the present invention is symmetrical arranged two polarisation waveguiding structures, and the example structure schematic diagram of its polarizing layer and reflector relative surface;
Figure 20 polarisation light-emitting diode component of the present invention is encapsulated as the structural representation at convex arc top.
Wherein, Reference numeral
100,200,300,400,500,600,700 polarisation light-emitting diode components
10,210,310,410,510,610,710 pedestals
20,20A, 220,320,420,520,620,720 light-emitting diode chip for backlight unit
21,21A, 221,321,421,521,621 first exiting surfaces
22A, 23A lead
30,230,330,430,530,630,730 polarisation waveguiding structures
31,231,331,431,531,631 polarizing layers
32,532,632 reflector
33 conversion layers
34 photic zones
341 euphotic first
342 euphotic second
343 incidence surfaces
344 second exiting surfaces
35 polarisation waveguiding structure semi-finished product
40,240,340,440,540,640,740 encapsulating materials
The d1 spacing
The light that the L1 light-emitting diode chip for backlight unit sends
L2 P polarisation L3 S polarisation
L4 S polar biased reverberation
L5 reclaims the P polarisation
Embodiment
Below in conjunction with accompanying drawing structural principle of the present invention and operation principle are done concrete description:
See also Fig. 1, Fig. 1 is the embodiment cross-sectional view of a kind of polarisation light-emitting diode component proposed by the invention, this polarisation light-emitting diode component 100 comprises a pedestal (base) 10, one light-emitting diode chip for backlight unit 20, an one polarisation waveguiding structure 30 and an encapsulating material (packaging material) 40, this light-emitting diode chip for backlight unit 20 is arranged on this pedestal 10, this light-emitting diode chip for backlight unit 20 has one first exiting surface 21, this light-emitting diode chip for backlight unit 20 can emit beam L1 by these first exiting surface, 21 outputs, this polarisation waveguiding structure 30 comprises a polarizing layer 31, one reflector (reflective layer), 32 and one conversion layer 33, this polarizing layer 31, reflector 32 and conversion layer 33 are arranged on the photic zone 34, none fixed limit system of shape of this photic zone 34, this polarizing layer 31 of for example can serving as reasons, reflector 32, the spatial form that conversion layer 33 and light-emitting diode chip for backlight unit 20 are enclosed to form, or can be a translucent material, the characteristic with light-permeable gets final product.In the present embodiment, this polarizing layer 31, reflector 32 and conversion layer 33 are the plane, has an angle theta 1 between first exiting surface 21 of this polarizing layer 31 and this light-emitting diode chip for backlight unit 20, and this angle theta 1 is less than 90 degree, this reflector 32 has an angle theta 2 with first exiting surface 21 of this light-emitting diode chip for backlight unit 20, this angle theta 2 is greater than 0 degree and less than 180 degree, and exiting surface 21 almost parallels of this conversion layer 33 and this light-emitting diode chip for backlight unit 20, this polarisation waveguiding structure 30 is arranged on the light outgoing route of this light-emitting diode chip for backlight unit 20, and this polarisation waveguiding structure 30 comprises an incidence surface 343, this incidence surface 343 is towards first exiting surface 21 of this light-emitting diode chip for backlight unit 20, and this encapsulating material 40 is in order to this polarisation waveguiding structure 30, this light-emitting diode chip for backlight unit 20 is packaged as a whole with this pedestal 10.
See also Fig. 2 to Fig. 7, Fig. 2～Fig. 6 is the schematic diagram of fabrication technology of polarisation waveguiding structure of the present invention; Fig. 7 for polarisation waveguiding structure of the present invention in conjunction with light-emitting diode chip for backlight unit and the structural representation that encapsulates, the manufacture method and the technological process of this polarisation waveguiding structure 30 shown in Figure 1 are described.
At first as shown in Figure 2, purchase a translucent material as this photic zone 34, this translucent material can adopt the acrylic or the encapsulation hot setting glue (thermosetting resin) of printing opacity, this photic zone 34 has relative first 341 and one second 342, the shape of this photic zone 34 there is no certain limitation, in the present embodiment, this photic zone 34 is elongated.
As shown in Figure 3, first 341 at this photic zone 34 is provided with a polarizing layer 31, this polarizing layer 31 can adopt to have nano metal wiregrating, the multilayer optical plated film (multilayer opticalfilm) of polarisation centrifugation or the polarization spectrum groupware made from light birefringent material (birefringent material) combination, can be arranged on this photic zone 34 by nano impression (nanoimprint), deposition plating or coating technique respectively; In addition, second 342 at this photic zone 34 is provided with reflector 32, this reflector 32 is for having the metal or the nonmetal plated film of reverberation effect, can be arranged on this photic zone 34 by depositional mode, mandatory declaration be, the setting in this polarizing layer 31 and this reflector 32 there is no certain sequencing, this polarizing layer 31 can be set earlier or this reflector 32 can be set earlier, simultaneously, end face or bottom surface are not represented in first 341 and second the 342 relative two sides of only representing this photic zone 34 of this photic zone 34.
As shown in Figure 4, the photic zone 34 that is provided with polarizing layer 31 and reflector 32 is cut, length and actual required form according to this photic zone 34, can cut and form at least one polarisation waveguiding structure semi-finished product 35, as shown in Figure 5, these polarisation waveguiding structure semi-finished product 35 have the photic zone 34 of a translucent material as main body, this photic zone 34 presents rhombus, it has four faces, wherein one side is a polarizing layer 31, another side is reflector 32 relatively, and an incidence surface 343 and one second exiting surface 344, this incidence surface 343 is relative two sides with this second exiting surface 344, and this incidence surface 343 and second exiting surface 344 are located between this polarizing layer 31 and this reflector 32, and be last, at second exiting surface 344 of these polarisation waveguiding structure semi-finished product 35 conversion layer 33 is set, this conversion layer 33 can adopt 1/2nd phase delay devices (phaseretarder) to be attached on this photic zone 34, so can form this polarisation waveguiding structure 30 as shown in Figure 6.
See also shown in Figure 7, this polarisation waveguiding structure 30 and light-emitting diode chip for backlight unit 20 encapsulatings are solidified, the incidence surface 343 of these polarisation waveguiding structure semi-finished product 35 is towards first exiting surface 21 of this light-emitting diode chip for backlight unit 20, this light-emitting diode chip for backlight unit 20 can be single light-emitting diode chip for backlight unit or has linked with pedestal 10, with encapsulating material 40 this polarisation waveguiding structure 30, this light-emitting diode chip for backlight unit 20 are packaged as a whole with this pedestal 10 more at last, form this polarisation light-emitting diode component 100 shown in Figure 1.
According to the manufacturing process of above-mentioned this polarisation light-emitting diode component 100 as can be known, because this photic zone 34 can adopt the encapsulation hot setting glue (thermosetting resin) of printing opacity, therefore can derive these polarisation light-emitting diode component 100 another manufacturing process of the present invention, see also shown in Figure 1, can utilize mould to support this polarizing layer 31, the relative position of reflector 32 and conversion layer 33 and this light-emitting diode chip for backlight unit 20 (comprising this pedestal 10), encapsulate with encapsulating material 40 encapsulating in the lump again, in encapsulation process, can design and make encapsulating material flow into this polarizing layer 31, reflector 32, the space that conversion layer 33 and light-emitting diode chip for backlight unit 20 are enclosed to form, this photic zone 34 that has translucent material with formation, maybe can design and not make encapsulating material flow into this polarizing layer 31, reflector 32, the space that conversion layer 33 and light-emitting diode chip for backlight unit 20 are enclosed to form makes the photic zone 34 that keeps a spatial form.
See also polarisation waveguiding structure of the present invention shown in Figure 8 another example structure schematic diagram in conjunction with light-emitting diode chip for backlight unit, the end face (i.e. the first exiting surface 21A) that illustrates this light-emitting diode chip for backlight unit 20A extends two lead 22A, 23A is connected to this pedestal 10, therefore, when this polarisation waveguiding structure 30 is solidified with light-emitting diode chip for backlight unit 20A encapsulating, can there be a determining deviation d1 between the first exiting surface 21A of the incidence surface 343 of this polarisation waveguiding structure 30 and this light-emitting diode chip for backlight unit 20A, generally speaking, this spacing d1 is about 0.1～0.5mm, therefore the bright dipping for this light-emitting diode chip for backlight unit 20A can constitute any influence hardly, if consider that this spacing d1 produced influence the time, then can consider to adopt lead to be arranged at the light-emitting diode chip for backlight unit (not shown) of bottom.
What must emphasize is, this polarizing layer 31, reflector 32, incidence surface 343 and conversion layer 33 (i.e. second exiting surface 344 of this photic zone 34) have certain relative position relation, see also shown in Figure 1, the light L1 that this light-emitting diode chip for backlight unit 20 is throwed can be entered this photic zone 34 by the incidence surface 343 of this polarisation waveguiding structure 30, and be projeced into this polarizing layer 31, because this polarizing layer 31 has the polarisation centrifugation, therefore the certain polarisation of tolerable by and reflect another polarisation, for example, if this polarizing layer 31 can allow P polarisation L2 to pass through, then can reflect S polarisation L3, via this suitable angle design, S polarisation L3 can be reflected onto this reflector 32, form S polar biased reverberation L4 to this conversion layer 33 by this reflector 32 this S polarisation of reflection L3 again,, therefore S polar biased reverberation L4 can be converted to and reclaim P polarisation L5 because this conversion layer 33 is 1/1st phase delay device (phase retarder), in other words, the light that is projected by this polarisation light-emitting diode component 100 is the P polarisation.Because this P polarisation L2 and S polarisation L3 respectively account for 50% of this light L1, if this S polarisation L3 is during without any recycling, then light extraction efficiency is only up to 50%, under the ideal state, if this polarizing layer 31 can allow P polarisation L2 to pass through fully, simultaneously can reflect this S polarisation L3 fully, this reflector 32 can reflect to form this S polar biased reverberation L4 fully, and this S polar biased reverberation L4 can pass through this conversion layer 33 fully, then this recovery P polarisation L5 should account for 50% of this light L1 in theory, yet light is being advanced, in reflection and the transfer process, or this spacing d1 as shown in Figure 8, all can cause certain consume, therefore must make it reach optimum efficiency by design; In addition, this second exiting surface 344 is the light directions that help judging this polarisation light-emitting diode component 100 with the effect of these first exiting surface, 21 almost parallels, if when changing the angle of this second exiting surface 344 (i.e. this conversion layer 33) and this first exiting surface 21, then can change the ejaculation angle of P polarisation L5, in other words, this second exiting surface 344 has an angle that is not equal to 90 degree with this first exiting surface 21 and gets final product, be not limited to illustrate the state that is parallel to each other, in like manner, if when this second exiting surface 344 is set to cambered surface, then have the effect that changes light-changing type for this P polarisation L5.
For example, aspect optical design, if this polarizing layer 31 adopts structure height and cycle to be the aluminum metal grating of 160nm, this light-emitting diode chip for backlight unit 20 can send the light L1 (being shown in Fig. 1) that wavelength is 550nm, the relation of analyzing its P and S polarisation penetrance and incident angle is respectively as Fig. 9 and shown in Figure 10, the axis of ordinates of Fig. 9 and Figure 10 is represented penetrance (%), and its axis of abscissas is represented incidence angle (degree).P and S polarisation with the different incidence angles degree, penetrate the ratio of aluminum metal grating, when light L1 incidence angle (being this angle theta 1 of Fig. 1) is 40 when spending, P polarisation penetrance reaches 80% (with reference to figure 9), S polarisation penetrance is 0.00025% (with reference to Figure 10) only, has good extinction ratio (Extinction ratio).Meaning promptly, when light enters the polarisation waveguiding structure with the incidence angles of 40 degree, the penetrable grating of 75%P polarisation, most S polarisation will reflect, enter in the waveguide recovery repeatedly.
Secondly, see also Figure 11 to Figure 17, Figure 11 is the 30 example structure schematic diagrames of spending for the polarizing layer of polarisation light-emitting diode component of the present invention and the light-emitting diode chip for backlight unit angle of appearing; Figure 12 is the light shape simulation drawing of Figure 11 embodiment; Figure 13 is symmetrical arranged two polarisation waveguiding structures for polarisation light-emitting diode component of the present invention, and its polarizing layer and light-emitting diode chip for backlight unit exiting surface angle are the example structure schematic diagrames of 30 degree; Figure 14 is the light shape simulation drawing of Figure 13 embodiment; Figure 15 is symmetrical arranged two polarisation waveguiding structures for polarisation light-emitting diode component of the present invention, and its polarizing layer and light-emitting diode chip for backlight unit exiting surface angle are the example structure schematic diagrames of 40 degree; Figure 16 is the light shape simulation drawing of Figure 15 embodiment; Figure 17 is symmetrical arranged two polarisation waveguiding structures for polarisation light-emitting diode component of the present invention, and its polarizing layer and reflector be the example structure schematic diagram of curved surface, and the light deformationization of different embodiments of the invention structure is described respectively with top view.
This polarisation light-emitting diode component 200 as shown in figure 11, it comprises pedestal 210, light-emitting diode chip for backlight unit 220, polarisation waveguiding structure 230 and encapsulating material 240, the angle theta 3 that first exiting surface of the polarizing layer 231 of this polarisation waveguiding structure 230 and this light-emitting diode chip for backlight unit 220 is 221 is 30 degree, its light shape analog result as shown in figure 12, wherein the radius coordinate is a relative light intensity, and angular coordinate is a rising angle.Light shape is with middle 180 degree position maximums, and its structure that shows this polarisation light-emitting diode component 200 not only has the polarisation function, and adjustable lay the grain shape, and degree of polarization (polarization ratio) can reach 74.69% as calculated.
This polarisation light-emitting diode component 300 as shown in figure 13, it comprises pedestal 310, light-emitting diode chip for backlight unit 320, polarisation waveguiding structure 330 and encapsulating material 340, the angle theta 4 that first exiting surface of the polarizing layer 331 of this polarisation waveguiding structure 330 and this light-emitting diode chip for backlight unit 320 is 321 is 30 degree, the characteristics of present embodiment are to be arranged with two groups of these polarisation waveguiding structures 330, can be referred to as double wave and lead design, its light shape analog result as shown in figure 14, its light shape comparatively symmetry and degree of polarization (polarization ratio) can reach 78.84%, wherein the radius coordinate is a relative light intensity, and angular coordinate is a rising angle.
This polarisation light-emitting diode component 400 as shown in figure 15, it comprises pedestal 410, light-emitting diode chip for backlight unit 420, polarisation waveguiding structure 430 and encapsulating material 440, the characteristics of present embodiment are that the angle theta 5 of 421 of first exiting surfaces of the polarizing layer 431 of this polarisation waveguiding structure 430 and this light-emitting diode chip for backlight unit 420 is 40 degree, its light shape analog result as shown in figure 16, its light shape symmetry and comparatively flat, and centre and both sides have more light output, wherein the radius coordinate is a relative light intensity, and angular coordinate is a rising angle.
This polarisation light-emitting diode component 500 as shown in figure 17, it comprises pedestal 510, light-emitting diode chip for backlight unit 520, polarisation waveguiding structure 530 and encapsulating material 540, the characteristics of present embodiment are that the polarizing layer 531 of this polarisation waveguiding structure 530 and reflector 532 are curved surface, this polarizing layer 531 is a cancave cambered surface, and this cancave cambered surface is towards this light-emitting diode chip for backlight unit 520, and has an angle of contingence θ 6 with the exiting surface of this light-emitting diode chip for backlight unit 520, this reflector 532 then is a convex globoidal, and this convex globoidal is towards this light-emitting diode chip for backlight unit 520, its light shape analog result as shown in figure 18, its light shape can be partial to central authorities and be concentrated, wherein the radius coordinate is a relative light intensity, and angular coordinate is a rising angle.This polarisation light-emitting diode component 600 as shown in figure 19, it comprises pedestal 610, light-emitting diode chip for backlight unit 620, polarisation waveguiding structure 630 and encapsulating material 640, and this polarizing layer 631 is a convex globoidal, and this reflector 632 is a cancave cambered surface.
Above-mentioned different embodiment shows, the user can design polarizing layer and reflector as required, can adopt plano-polarized light layer and reflector, or the plano-polarized light layer cooperates the camber reflection layer, or the curved surface polarizing layer cooperates the plane reflection layer, or polarizing layer and reflector be curved surface, or the radian of curved surface is not simultaneously, exportable pack or the shape of not sharing the same light of dispersing.
See also this polarisation light-emitting diode component 700 shown in Figure 20, it comprises pedestal 710, light-emitting diode chip for backlight unit 720, polarisation waveguiding structure 730 and encapsulating material 740, compare mutually with Fig. 1 embodiment, the characteristics of present embodiment are that this encapsulating material 740 has a convex arc top, in like manner, can arrange in pairs or groups Figure 11, Figure 13, Figure 15, Figure 17 or different polarisation waveguiding structure 230,330,430,530 or 630 shown in Figure 19 of this encapsulating material 740 of present embodiment.
In sum, polarisation light-emitting diode component provided by the invention and manufacture method thereof, by being combined with polarizing layer, reflector and polarisation waveguiding structure that conversion layer constituted, can guide and change at light source, and change polar biased simultaneously and reclaim reflection ray, polarization efficient is brought up to more than 75%, improve whole energy efficiency, and can adjust the light type by the appropriate configuration design, to satisfy the demand of different application occasion.
Certainly; the present invention also can have other various embodiments; under the situation that does not deviate from spirit of the present invention and essence thereof; those of ordinary skill in the art work as can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the present invention.
Claims (48)
1. a polarisation light-emitting diode component is characterized in that, comprises:
One pedestal;
One light-emitting diode chip for backlight unit is arranged on this pedestal, and this light-emitting diode chip for backlight unit has one first exiting surface, and this light-emitting diode chip for backlight unit can emit beam by this first exiting surface output;
At least one polarisation waveguiding structure is made of a polarizing layer, a reflector and a conversion layer, and this polarisation waveguiding structure is arranged on the light outgoing route of this light-emitting diode chip for backlight unit; And
One encapsulating material is in order to be packaged as a whole this polarisation waveguiding structure, this light-emitting diode chip for backlight unit and this pedestal.
2. polarisation light-emitting diode component as claimed in claim 1 is characterized in that, described polarizing layer has nano metal wiregrating, the multilayer optical plated film of polarisation centrifugation or the polarization spectrum groupware made from the combination of light birefringent material.
3. polarisation light-emitting diode component as claimed in claim 1 is characterized in that, described polarizing layer is a plane.
4. polarisation light-emitting diode component as claimed in claim 3 is characterized in that, first exiting surface of described polarizing layer and this light-emitting diode chip for backlight unit has an angle, and this angle is less than 90 degree.
5. polarisation light-emitting diode component as claimed in claim 1 is characterized in that, described polarizing layer is a curved surface.
6. polarisation light-emitting diode component as claimed in claim 5 is characterized in that, described polarizing layer is a convex globoidal, and this convex globoidal is towards this light-emitting diode chip for backlight unit, and has an angle of contingence with first exiting surface of this light-emitting diode chip for backlight unit.
7. polarisation light-emitting diode component as claimed in claim 5 is characterized in that, described polarizing layer is a cancave cambered surface, and this cancave cambered surface is towards this light-emitting diode chip for backlight unit, and has an angle of contingence with first exiting surface of this light-emitting diode chip for backlight unit.
8. polarisation light-emitting diode component as claimed in claim 1 is characterized in that, described reflector is metal or the nonmetal plated film with reverberation effect.
9. polarisation light-emitting diode component as claimed in claim 1 is characterized in that, described reflector is a plane.
10. polarisation light-emitting diode component as claimed in claim 9 is characterized in that, first exiting surface of described reflector and this light-emitting diode chip for backlight unit has certain angle, and this angle is greater than 0 degree and less than 180 degree.
11. polarisation light-emitting diode component as claimed in claim 1 is characterized in that, described reflector is a curved surface.
12. polarisation light-emitting diode component as claimed in claim 11 is characterized in that, described reflector is a convex globoidal, and this convex globoidal is towards this light-emitting diode chip for backlight unit, and has an angle of contingence with first exiting surface of this light-emitting diode chip for backlight unit.
13. polarisation light-emitting diode component as claimed in claim 11 is characterized in that, described reflector is a cancave cambered surface, and this cancave cambered surface is towards this light-emitting diode chip for backlight unit, and has an angle of contingence with first exiting surface of this light-emitting diode chip for backlight unit.
14. polarisation light-emitting diode component as claimed in claim 1 is characterized in that, described conversion layer is 1/1st phase delay device.
15. polarisation light-emitting diode component as claimed in claim 1 is characterized in that, first exiting surface of described second exiting surface and this light-emitting diode chip for backlight unit has an angle, and this angle is not equal to 90 degree.
16. polarisation light-emitting diode component as claimed in claim 1, it is characterized in that, described polarisation waveguiding structure also comprises a photic zone, this photic zone has one first, one second, an incidence surface and one second exiting surface, this polarizing layer is arranged at this first, this reflector is arranged at this second, and this conversion layer is arranged at this second exiting surface, and this incidence surface is towards first exiting surface of this light-emitting diode chip for backlight unit; After the light that this light-emitting diode chip for backlight unit sent is exported by this first exiting surface, can inject this photic zone and be projeced into this polarizing layer by this euphotic incidence surface, by this polarizing layer part light is reflexed to this reflector again, by this reflector light is reflexed to this second exiting surface again, penetrate this polarisation waveguiding structure by this conversion layer again.
17. polarisation light-emitting diode component as claimed in claim 16 is characterized in that, described photic zone can be the acrylic or the encapsulation hot setting glue of printing opacity.
18. polarisation light-emitting diode component as claimed in claim 16 is characterized in that described polarizing layer is arranged on this photic zone with nano impression, deposition plating or coating technique.
19. polarisation light-emitting diode component as claimed in claim 16 is characterized in that described reflector is arranged on this photic zone with depositional mode.
20. polarisation light-emitting diode component as claimed in claim 16 is characterized in that described conversion layer is attached on this photic zone.
21. polarisation light-emitting diode component as claimed in claim 1 is characterized in that, is arranged with two groups of polarisation waveguiding structures.
22. the manufacture method of a polarisation light-emitting diode component is characterized in that, comprises:
Purchase a light-emitting diode chip for backlight unit, this light-emitting diode chip for backlight unit is arranged on the pedestal, and this light-emitting diode chip for backlight unit has one first exiting surface, and this light-emitting diode chip for backlight unit can emit beam by this first exiting surface output;
Purchase a photic zone, this photic zone has relative first and one second;
At this euphotic first polarizing layer is set, the reflector is set at this euphotic second;
The photic zone that is provided with polarizing layer and reflector is cut, form at least one polarisation waveguiding structure semi-finished product, the half-finished wherein one side of this polarisation waveguiding structure is a polarizing layer, another side is the reflector relatively, and an incidence surface and one second exiting surface, this incidence surface is relative two sides with this second exiting surface, and this incidence surface and second exiting surface are located between this polarizing layer and this reflector;
At half-finished second exiting surface of this polarisation waveguiding structure one conversion layer is set, forms a polarisation waveguiding structure; And
Utilize encapsulating material that this polarisation waveguiding structure and this light-emitting diode chip for backlight unit and this pedestal are packaged as a whole, this incidence surface is towards this first exiting surface, after the light that this light-emitting diode chip for backlight unit sent is exported by this first exiting surface, can inject this photic zone and be projeced into this polarizing layer by this euphotic incidence surface, by this polarizing layer part light is reflexed to this reflector again, by this reflector light is reflexed to this second exiting surface again, penetrate this polarisation waveguiding structure by this conversion layer again.
23. the manufacture method of polarisation light-emitting diode component as claimed in claim 22 is characterized in that, described polarizing layer is arranged at this euphotic first with nano impression, deposition plating or coating technique.
24. the manufacture method of polarisation light-emitting diode component as claimed in claim 22 is characterized in that, described reflector is arranged at this euphotic second with depositional mode.
25. the manufacture method of polarisation light-emitting diode component as claimed in claim 22 is characterized in that, described conversion layer is attached on this photic zone.
26. the manufacture method of polarisation light-emitting diode component as claimed in claim 22 is characterized in that, described polarizing layer has nano metal wiregrating, the multilayer optical plated film of polarisation centrifugation or the polarization spectrum groupware made from the combination of light birefringent material.
27. the manufacture method of polarisation light-emitting diode component as claimed in claim 22 is characterized in that, described euphotic first is a plane.
28. the manufacture method of polarisation light-emitting diode component as claimed in claim 22 is characterized in that, described euphotic first is a curved surface.
29. the manufacture method of polarisation light-emitting diode component as claimed in claim 28 is characterized in that, described euphotic first is a convex globoidal.
30. the manufacture method of polarisation light-emitting diode component as claimed in claim 28 is characterized in that, described euphotic first is a cancave cambered surface.
31. the manufacture method of polarisation light-emitting diode component as claimed in claim 22 is characterized in that, described reflector is metal or the nonmetal plated film with reverberation effect.
32. the manufacture method of polarisation light-emitting diode component as claimed in claim 22 is characterized in that, described euphotic second is a plane.
33. the manufacture method of polarisation light-emitting diode component as claimed in claim 22 is characterized in that, described euphotic second is a curved surface.
34. the manufacture method of polarisation light-emitting diode component as claimed in claim 33 is characterized in that, described euphotic second is a convex globoidal.
35. the manufacture method of polarisation light-emitting diode component as claimed in claim 33 is characterized in that, described euphotic second is a cancave cambered surface.
36. the manufacture method of polarisation light-emitting diode component as claimed in claim 22 is characterized in that, described conversion layer is 1/1st phase delay device.
37. the manufacture method of a polarisation light-emitting diode component is characterized in that, comprises:
Purchase a light-emitting diode chip for backlight unit, this light-emitting diode chip for backlight unit is arranged on the pedestal, and this light-emitting diode chip for backlight unit has one first exiting surface, and this light-emitting diode chip for backlight unit can emit beam by this first exiting surface output;
Purchase a polarizing layer, a reflector and a conversion layer, enclose the photic zone that forms a spatial form jointly by this polarizing layer, reflector and conversion layer and this light-emitting diode chip for backlight unit, this photic zone has relative first and one second;
Be provided with this polarizing layer at this euphotic first face, be provided with this reflector at this euphotic second face, and this photic zone has an incidence surface and one second exiting surface, this incidence surface is relative two sides with this second exiting surface, and this incidence surface and second exiting surface are located between this polarizing layer and this reflector, and this second exiting surface is provided with this conversion layer; And
Utilize encapsulating material that this polarizing layer, reflector, conversion layer and this light-emitting diode chip for backlight unit and this pedestal are packaged as a whole, this euphotic incidence surface is towards this first exiting surface, after the light that this light-emitting diode chip for backlight unit sent is exported by this first exiting surface, can inject this photic zone and be projeced into this polarizing layer by this euphotic incidence surface, by this polarizing layer part light is reflexed to this reflector again, by this reflector light is reflexed to this second exiting surface again, penetrate by this conversion layer again.
38. the manufacture method of polarisation light-emitting diode component as claimed in claim 37 is characterized in that, described polarizing layer is nano metal wiregrating, multilayer optical plated film with polarisation centrifugation or the polarization spectrum groupware made from the combination of light birefringent material.
39. the manufacture method of polarisation light-emitting diode component as claimed in claim 37 is characterized in that, described euphotic first is a plane.
40. the manufacture method of polarisation light-emitting diode component as claimed in claim 37 is characterized in that, described euphotic first is a curved surface.
41. the manufacture method of polarisation light-emitting diode component as claimed in claim 40 is characterized in that, described euphotic first is a convex globoidal.
42. the manufacture method of polarisation light-emitting diode component as claimed in claim 40 is characterized in that, described euphotic first is a cancave cambered surface.
43. the manufacture method of polarisation light-emitting diode component as claimed in claim 37 is characterized in that, described reflector is metal or the nonmetal plated film with reverberation effect.
44. the manufacture method of polarisation light-emitting diode component as claimed in claim 37 is characterized in that, described euphotic second is a plane.
45. the manufacture method of polarisation light-emitting diode component as claimed in claim 37 is characterized in that, described euphotic second is a curved surface.
46. the manufacture method of polarisation light-emitting diode component as claimed in claim 45 is characterized in that, described euphotic second is a convex globoidal.
47. the manufacture method of polarisation light-emitting diode component as claimed in claim 45 is characterized in that, described euphotic second is a cancave cambered surface.
48. the manufacture method of polarisation light-emitting diode component as claimed in claim 37 is characterized in that, described conversion layer is 1/1st phase delay device.
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| CN200910207599A CN102054908B (en) | 2009-10-29 | 2009-10-29 | Polarized light emitting diode assembly and manufacturing method thereof |
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| CN200910207599A CN102054908B (en) | 2009-10-29 | 2009-10-29 | Polarized light emitting diode assembly and manufacturing method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013076896A1 (en) * | 2011-11-22 | 2013-05-30 | パナソニック株式会社 | Semiconductor light-emitting device |
| CN109841722A (en) * | 2017-11-24 | 2019-06-04 | 环旭电子股份有限公司 | Optical devices |
| CN110098242A (en) * | 2019-05-22 | 2019-08-06 | 京东方科技集团股份有限公司 | A kind of coloured silk film layer and preparation method thereof, display panel |
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2009
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013076896A1 (en) * | 2011-11-22 | 2013-05-30 | パナソニック株式会社 | Semiconductor light-emitting device |
| JP5275528B1 (en) * | 2011-11-22 | 2013-08-28 | パナソニック株式会社 | Semiconductor light emitting device |
| CN109841722A (en) * | 2017-11-24 | 2019-06-04 | 环旭电子股份有限公司 | Optical devices |
| CN110098242A (en) * | 2019-05-22 | 2019-08-06 | 京东方科技集团股份有限公司 | A kind of coloured silk film layer and preparation method thereof, display panel |
| WO2020233291A1 (en) * | 2019-05-22 | 2020-11-26 | 京东方科技集团股份有限公司 | Display substrate, manufacture method therefor, and display panel |
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