CN102054659A - Substrate processing device and covering element thereof - Google Patents
Substrate processing device and covering element thereof Download PDFInfo
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- CN102054659A CN102054659A CN 200910207462 CN200910207462A CN102054659A CN 102054659 A CN102054659 A CN 102054659A CN 200910207462 CN200910207462 CN 200910207462 CN 200910207462 A CN200910207462 A CN 200910207462A CN 102054659 A CN102054659 A CN 102054659A
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- substrate
- cover part
- processing device
- substrate processing
- cladding element
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- 239000000758 substrate Substances 0.000 title claims abstract description 148
- 238000012545 processing Methods 0.000 title claims abstract description 56
- 239000006227 byproduct Substances 0.000 claims abstract description 5
- 238000005253 cladding Methods 0.000 claims description 67
- 238000000034 method Methods 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 10
- 238000009434 installation Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 abstract description 3
- 239000012634 fragment Substances 0.000 description 15
- 230000002265 prevention Effects 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000000717 retained effect Effects 0.000 description 3
- 238000009489 vacuum treatment Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 235000019994 cava Nutrition 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- Drying Of Semiconductors (AREA)
Abstract
The invention discloses a substrate processing device for processing substrate etching and a covering element thereof. The substrate processing device comprises a processing cavity forming a processing space, a substrate supporting plate and the covering element; the substrate supporting plate is provided with a lower electrode and is configured to form a structure that one or more substrates are assembled on the substrate supporting plate directly or through a tray; the covering element is provided with a plurality of openings passing through an upper direction and a lower direction and is configured to cover the substrates at intervals; a covering space is formed between the bottom surface of the covering element and each of the substrates, and one or more parts of the side of the covering element are opened so that gas introduced into the covering element from the opening and byproducts generated during substrate processing flow to the side surface of the substrate supporting plate.
Description
Technical field
The present invention relates to substrate processing device, and more specifically, relate to and can carry out for example vacuum treatment installation of the substrate processing of etch processes, and the cladding element that for this reason uses.
Background technology
Substrate processing device comprises that forming one handles the process chamber in space, and the supported plate that is installed in this process chamber and is configured to substrate is mounted thereon.This substrate processing device is used for by electric energy being put on this processing space together with surface from etch substrate to gas jet wherein that come or carry out deposition processes on this substrate.
The substrate that utilizes this substrate processing device to handle can comprise the glass substrate that is used for semi-conductive wafer, is used for the LCD panel, the substrate that is used for solar cell etc.
An example as substrate processing device, the substrate that is used for solar cell by installation on supported plate is arranged, thereby above this substrate, place the substrate processing device that the cladding element with a plurality of openings is used for forming on the surface of substrate microspike then.Here, one of purpose that forms projection is in order to reduce on-chip light reflectivity, so that improve the efficient of solar cell, wherein this projection may change according to the performance of equipment.
The substrate processing device that is used for forming on the surface of substrate by place cladding element above substrate microspike forms projection by following steps.
In traditional substrate processing device, in case electric energy is applied to process chamber, simultaneously gas blowing is gone into this process chamber, will handle the space at this and form plasma.Then, plasma passes the opening of this cladding element, thus the surface of this substrate of etching.
When carrying out the substrate etching, can produce for example byproduct of fragment.The part fragment is dispersed in the bottom surface and the covering space between this substrate of this cladding element.And the fragment that remaining fragment and part are scattered is attached on the surface of this substrate, thereby as the mask in the substrate etch processes.This accelerates the formation of this substrate surface upper process.
Here, the cladding element of this substrate processing device comprises the cover part with a plurality of openings, and the whole edge that is formed at this cover part, the supporting part by this substrate or the supporting of this substrate support plate.
Yet this traditional cladding element has following problem.
At first, this covering space is only handled spatial communication by this opening and this.And the side of this cladding element is covered by this support branch, thereby has disturbed air-flow and plasma.This may cause etch processes not finish smoothly.
The second, owing to do not have this fragment is discharged this covering space, most of fragment is accumulated in the surface of this substrate.This may hinder projection successfully to be formed at the surface of substrate.
Summary of the invention
Therefore, the purpose of this invention is to provide a kind of by gas, plasma, fragment etc. are flowed smoothly, and the fragment that makes required appropriate amount forms projection being retained in this covering space, and the cladding element that can successfully form the substrate processing device of projection on the surface of substrate and use for this reason.
In order to realize these and other advantage, and according to purpose of the present invention, so place imbody and broadly described provides a kind of substrate processing device, comprising: form the process chamber of handling the space; Supported plate with bottom electrode is directly installed this supported plate with one or more substrate or by pallet; And have at upper and lower to the opening that runs through formation, and has the cladding element of covering substrate at interval with this substrate, wherein, this cladding element forms covering space between its bottom surface and substrate, and one or more part of the side surface of this cladding element is open so that by this opening be incorporated into the gas of this cladding element and the by-product stream that during substrate is handled, generates to the side surface of this supported plate.
This cladding element can comprise the cover part with a plurality of openings; And a plurality of supporting parts, it is formed on the edge of bottom surface, described cover part, so that described cover part can have installation at interval with the described substrate that is installed on described pallet or the described supported plate, and has one or more open side surface.
Described a plurality of supporting part can be installed in the edge of this bottom, cover part.
This cover part can form tetragonal shape, and this supporting part can comprise a plurality of shaped elements on each summit that is installed on this cover part.
This shaped element can have the horizontal cross-section of one of the circle of forming, ellipse and polygon.
This cover part can form quadrangle, and this supporting part can be installed on some positions of this cover part but not each summit.
This cladding element can be placed on the inside or the outside of this process chamber.
Distance between this cover part and this substrate can be the scope of 5mm-30mm.
Distance between this cover part and this substrate can be bigger than the periphery in this cover part at the core of this cover part.
The aperture ratio of this cover part can be than big at this periphery at this core.
The opening of this cover part can be implemented as slit, and each slit has 1/2 width of distance between the bottom surface that is equal to or less than this cover part and this substrate.
One or more is used to prevent the downward distortion of this cladding element distortion downwards to prevent element can be installed on the core of this cover part.
Each opening can perhaps have Chamfer Edge on these two surfaces at the upper surface or the lower surface of this cover part.
Can be installed on the periphery of this substrate in addition by the pseudo-element made from this substrate identical materials (dummy member).
In order to realize these and other advantage, and according to purpose of the present invention, so place imbody and broadly described also provides a kind of cladding element that is used for this substrate processing device.
Cladding element according to this substrate processing device of the present invention and use for this reason has the following advantages.
At first, move by the side surface to this supported plate, pass one or more open side surface of this cladding element, gas, plasma, fragment etc. flow into the bottom surface of this cladding element and the covering space between the substrate smoothly.And the fragment that only is used to form the required appropriate amount of projection is retained in this covering space.Therefore, projection can successfully be formed at the surface of substrate and cladding element thereof.
Second, can also be equipped with downward distortion prevention post owing to be used under the cladding element with opening covers the state of the supported plate with position substrate thereon, carrying out the vacuum treated substrate processing device of substrate, be used to keep between this cladding element and this pallet or this supported plate should be out of shape and prevent post can make each substrate successfully realize vacuum treatment at interval downwards by the deadweight that prevents this cladding element.
Aforementioned and other purpose of the present invention, feature, aspect and advantage will be from below in conjunction with becoming more obvious the accompanying drawing detailed description of the present invention.
Description of drawings
This accompanying drawing is comprised being used to provide to further understanding of the present invention, and incorporates and constitute the part of this specification into, and illustration embodiment of the present invention are used to explain principle of the present invention together with the description.
Among the figure:
Fig. 1 is the profile according to substrate processing device of the present invention;
Fig. 2 is the perspective view of cladding element of the substrate processing device of Fig. 1;
Fig. 3 A and 3B show the profile of preferred embodiment of cladding element of the substrate processing device of Fig. 1;
Fig. 4 A to 4D shows the upward view of preferred embodiment of cladding element of the substrate processing device of Fig. 1.
Embodiment
With reference now to accompanying drawing, describes the present invention in detail.
Below will set forth in more detail according to substrate processing device of the present invention and reach the cladding element that for this reason uses.
Fig. 1 is the profile according to substrate processing device of the present invention, Fig. 2 is the perspective view of cladding element of the substrate processing device of Fig. 1, Fig. 3 A and 3B show the cutaway view of preferred embodiment of cladding element of the substrate processing device of Fig. 1, and Fig. 4 A and 4D show the upward view of preferred embodiment of cladding element of the substrate processing device of Fig. 1.
As shown in Figure 1, and substrate processing device of the present invention comprise process chamber 100 that form to handle space S; Have bottom electrode and be configured to directly install or pass through the supported plate 130 that pallet 20 assembles one or more substrates 10 thereon; And have and run through upper and lower to a plurality of openings 210 that form and be configured to cover the cladding element 200 of this substrate 10.
Can use need substrate to handle, for example etched any substrate is as substrate 10.Especially, can use by monocrystalline silicon or polysilicon substrate that make, that be used for solar cell and form its lip-deep microspike by etch processes.
In this process chamber 100, installed and be used for and spurt into the shower nozzle 140 of this processing space S by gas feeding apparatus 141 gas supplied, be used for directly or the supported plate 130 by pallet 20 assembling substrates 10, the gas extraction system (not shown) that is used to control this processing space S internal pressure and discharges gas, or the like.
As shown in Figure 1, substrate support plate 130 is configured to directly substrate 10 is fitted thereon, and perhaps the top pallet 20 that has assembled substrate 10 is mounted thereon.And supported plate 130 is equipped with the bottom electrode (not shown) that has applied electric energy, so that can be used for the reaction that substrate is handled in handling space S, for example forms plasma.
Here, can in every way electric energy be applied on this bottom electrode.For example, can be with process chamber 100 and shower nozzle 140 ground connection, and one or two radio-frequency power supply (RF power) is applied to this bottom electrode.Perhaps, can be with this bottom electrode ground connection, and radio-frequency power supply can be applied to process chamber 100 and shower nozzle 140.Also or, first radio-frequency power supply can be applied to this bottom electrode, and second radio-frequency power supply can be applied to process chamber 100 and shower nozzle 140.
Cladding element 200 can have various structures according to application target.As illustrated in fig. 1 and 2, this cladding element 200 can comprise cover part 220, it has a plurality of openings 210, and a plurality of supporting parts 230, it is formed at the edge of cover part 220 and has one or more open side, so that this cover part 220 can separate default spacing with the substrate 10 that is assemblied on pallet 20 or the supported plate 130.
Cladding element 200 has assembled at self and on it and has formed covering space ES between pallet 20 of substrate 10 or the supported plate 130.Correspondingly, the fragment that produces after by the plasma etching substrate of introducing covering space ES by opening 210 is retained among the covering space ES.Fragment is attached on the surface of substrate 10, to form microspike thereon.This has set forth the purpose of using this cladding element is an example that forms microspike on this substrate.
Here, consider the space that is used for holding therein fragment, and form speed by the projection of this fragment, the distance between cladding element 200 and pallet 20 or the supported plate 130 is preferably the scope of 5mm～30mm.
The opening 210 of cover part 220 can have different shape and size according to the application target of cladding element 200.As shown in Figure 2, the form that opening 210 can the crack realizes.In this case, the width W of opening 210 is preferably 1/2 of distance D between the bottom surface that is equal to or less than cover part 220 and the substrate 10.
As shown in Figure 1, opening 210 can be in the cover part 220 upper surface or lower surface or this two surfaces have Chamfer Edge.
When cladding element 200 covering substrates 10, this microspike can anisotropically be formed at the surface of substrate 10 according to for example based on the core of the upper surface of supported plate 130 and the position of periphery.
Correspondingly, cladding element 200 can be configured so that the distance of upper surface from pallet 20 or supported plate 130 220 the bottom surface to the cover part remains unchanged.Perhaps, shown in Fig. 3 A and 3B, cladding element 200 can be configured so that this distance can keep different according to this core and periphery.
More specifically, as shown in Figure 3A, the bottom surface of this cover part 220 can form at core more protruding.And shown in Fig. 3 B, the bottom surface of cover part 220 can form at core more caves in.
Cladding element 220 can be configured so that the aperture ratio of opening 210 can be according to core with periphery and different.Here, cladding element 220 can have the aperture ratio higher than periphery at core.
Supporting part 230 is used for realizing handling space S and covering space ES by pallet 20 or the fixed range between the supported plate 130 keeping cover part 220 and have a substrate 10 that is fitted thereon.Supporting part 230 can form one with cover part 220 on the whole, perhaps can separate formation with cover part 220.Here, supporting part 230 can be made by the material different with cover part 220.
Preferably, support section 230 forms the bottom surface of cover part 220 and the covering space ES between the substrate 10, so that gas and plasma can be introduced covering space ES smoothly.And, supporting part 230 is preferably formed for having at least one open sides surface, so that be incorporated into the gas of cladding element 200 and the side surface that at least a portion in the byproduct that substrate processing back produces can be shifted to supported plate 130 by opening 210.
The side that makes cladding element 200 is that open supporting part 230 can have any configuration.Shown in Fig. 4 A to 4D, supporting part 230 can have various configurations.
For example, cover part 220 can form quadrangle, and supporting part 230 can be implemented as a plurality of shaped elements on four summits that are installed on cover part 220.Here, shaped element also can be installed on the edge of cover part 220 but not the summit.
Shown in Fig. 4 A to 4C, shaped element can have various cross sectional shapes in the horizontal direction, for example circular (or oval), ' L ' shape, and quadrangle (polygon).
Perhaps, shown in Fig. 4 D, a plurality of supporting parts 230 can be installed in some positions but not four summits.Here, the summit is open.
Also or, although not shown, a plurality of supporting parts 230 can be installed in the edge of 220 bottom surfaces, cover part at interval.
A pair of cock (tap) (not shown) can be installed in supporting part 230, so that cladding element 200 can pass through additional transfer equipment (not shown) and vertical moving, so that cover pallet 20 or the supported plate 130 that is equipped with substrate 10 on it.
The cover part 220 of cladding element 200 may be out of shape downwards owing to its thickness is little.And when cover part 220 has bigger size, when having the substrate 10 of larger sized substrate 10 or greater number with covering, it may be out of shape downwards at core owing to its deadweight.Perhaps this cover part 220 may be out of shape downwards owing to the heat that produces during the vacuum treatment process.
If cover part 220 is out of shape excessively downwards, may influence the formation speed of fragment, the shape of opening 210 is imprinted on the substrate 10, thereby forms spot thereon.This may cause projection anisotropically to be formed at the surface of substrate 10.
In order to address these problems, as shown in Figure 1, being used to keep the bottom surface of cladding element 200 and one or more post of distortion prevention downwards of the default spacing between the supported plate 130 (or pallet 20) can be installed between cladding element 200 and the supported plate 130.
The post 300 of distortion prevention downwards can have arbitrary structures, with the bottom surface of keeping cladding element 200 and the interval between the supported plate 130.When considering with the contacting of plasma, the post of distortion prevention downwards 300 is preferably made by the material that the article on plasma body has a high resistance, for example aluminium, aluminium alloy, silicones and teflon (Teflon).
The post 300 of distortion prevention downwards can be implemented as the independent component that is installed separately with cladding element 200 and supported plate 130.Perhaps, the post 300 of distortion prevention downwards can screw connecting mode, being connected one of at least of the bottom surface of fit system etc. and cladding element 200 and supported plate 130.
The post 300 of distortion prevention downwards can be installed on the core of cladding element 200.Perhaps, a plurality of downward distortion prevention posts 300 can be installed in a plurality of lattice points of cover part 220, so that minimize the downward distortion of cladding element 200 under the situation of the not serious installation that influences substrate 10.Here, according to each position, consider the downward distortion of cover part 220, the downward distortion prevention post 300 that is positioned at each lattice point forms has suitable length.
The downward distortion prevention post 300 that is used to keep between the bottom surface of cladding element 200 and the supported plate 130 at interval forms column.And the post 300 of distortion prevention downwards can have various cross sectional shapes in the horizontal direction, for example circle, ellipse and polygon.
As shown in Figure 1, can also be installed on along the periphery of substrate 10 on pallet 20 or the supported plate 130 by the pseudo-element made from substrate 10 identical materials (for example silicones) 11.Preferably, substrate 10 and pseudo-element 11 are made by identical materials, for example monocrystalline silicon or polysilicon.
Aforesaid embodiment and advantage only are exemplary, but not are interpreted as limiting the disclosure.This instruction can easily be applied to the device of other type.This specification is intended to illustration, and the scope of unrestricted claim.Many replacements, correction and modification are tangible to one skilled in the art.The feature of typical embodiments described herein, structure, method and other characteristics can make up in various manners, to obtain typical embodiments other and/or that replace.
Eigen can be with embodied in various forms under the situation that does not depart from its characteristics, also be to be understood that, unless mode specifies in addition, above-mentioned embodiment is not limited by any details of above stated specification, but should in appended claim institute restricted portion, be explained widely, therefore fall into the border and the boundary of this claim, perhaps in the equivalent of these borders and boundary change and revise the claim that is intended to by appended and comprise.
Claims (15)
1. a substrate processing device comprises: form the process chamber of handling the space; Supported plate with bottom electrode, described supported plate directly or by pallet is equipped with one or more substrate; And cladding element, it has and runs through upper and lower to a plurality of openings that form, and has the compartment of terrain with described substrate and cover described substrate,
Wherein, described cladding element forms covering space between its bottom surface and described substrate, and one or more part of described cladding element side surface is for open so that by described opening be incorporated into the gas of described cladding element and the by-product stream that during substrate is handled, produces to the side surface of described supported plate.
2. substrate processing device as claimed in claim 1, wherein, described cladding element comprises:
Cover part with a plurality of openings; And
A plurality of supporting parts, it is formed on the edge of bottom surface, described cover part, so that described cover part can have the compartment of terrain installation with the described substrate that is assemblied on described pallet or the described supported plate, and has one or more open side surface.
3. substrate processing device as claimed in claim 2, wherein, described a plurality of supporting parts are installed on the edge of bottom, described cover part at certain intervals.
4. substrate processing device as claimed in claim 2, wherein, described cover part forms quadrangle, and described supporting part comprises a plurality of shaped elements on each summit that is installed on described cover part.
5. substrate processing device as claimed in claim 4, wherein, described shaped element has a kind of horizontal cross-section in the circle of forming, ellipse and the polygon.
6. substrate processing device as claimed in claim 2, wherein, described cover part forms quadrangle, and described supporting part is installed in some positions of described cover part but not each summit.
7. as each described substrate processing device of claim 1 to 6, wherein, described cladding element places the inside or the outside of described process chamber.
8. as each described substrate processing device of claim 1 to 6, wherein, the distance between described cover part and the described substrate is in the scope of 5mm-30mm.
9. as each described substrate processing device of claim 2 to 6, wherein, the distance between described cover part and the described substrate is long at the periphery of described cover part at the core ratio of described cover part.
10. as each described substrate processing device of claim 2 to 6, wherein, described cover part at core than having bigger aperture ratio at periphery.
11. as each described substrate processing device of claim 2 to 6, wherein, the opening of described cover part is embodied as slit, each slit has 1/2 width of distance between the bottom surface that is equal to or less than described cover part and the described substrate.
12. as each described substrate processing device of claim 2 to 6, wherein, one or more is used to prevent the downward distortion of described cladding element distortion downwards to prevent element to be installed in the core of described cover part.
13. as each described substrate processing device of claim 2 to 6, wherein, each described opening is at the upper surface or the lower surface of described cover part, or has Chamfer Edge on these two surfaces.
14., wherein, be installed in the periphery of described substrate by the pseudo-element made from described substrate identical materials as each described substrate processing device of claim 1 to 6.
15. be used for cladding element as each described substrate processing device of claim 1 to 6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910207462 CN102054659B (en) | 2009-11-05 | 2009-11-05 | Substrate processing device and covering element thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910207462 CN102054659B (en) | 2009-11-05 | 2009-11-05 | Substrate processing device and covering element thereof |
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| Publication Number | Publication Date |
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| CN102054659A true CN102054659A (en) | 2011-05-11 |
| CN102054659B CN102054659B (en) | 2013-04-10 |
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Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US6415736B1 (en) * | 1999-06-30 | 2002-07-09 | Lam Research Corporation | Gas distribution apparatus for semiconductor processing |
| KR101444873B1 (en) * | 2007-12-26 | 2014-09-26 | 주성엔지니어링(주) | System for treatmenting substrate |
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