CN102054659B - Substrate processing device and covering element thereof - Google Patents
Substrate processing device and covering element thereof Download PDFInfo
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- CN102054659B CN102054659B CN 200910207462 CN200910207462A CN102054659B CN 102054659 B CN102054659 B CN 102054659B CN 200910207462 CN200910207462 CN 200910207462 CN 200910207462 A CN200910207462 A CN 200910207462A CN 102054659 B CN102054659 B CN 102054659B
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- substrate
- cover part
- processing device
- substrate processing
- cladding element
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- 239000000758 substrate Substances 0.000 title claims abstract description 145
- 238000012545 processing Methods 0.000 title claims abstract description 58
- 239000006227 byproduct Substances 0.000 claims abstract description 5
- 238000005253 cladding Methods 0.000 claims description 66
- 238000000034 method Methods 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 10
- 238000009434 installation Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 abstract description 3
- 239000012634 fragment Substances 0.000 description 15
- 230000002265 prevention Effects 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000000717 retained effect Effects 0.000 description 3
- 238000009489 vacuum treatment Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 235000019994 cava Nutrition 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
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- Drying Of Semiconductors (AREA)
Abstract
The invention discloses a substrate processing device for processing substrate etching and a covering element thereof. The substrate processing device comprises a processing cavity forming a processing space, a substrate supporting plate and the covering element; the substrate supporting plate is provided with a lower electrode and is configured to form a structure that one or more substrates are assembled on the substrate supporting plate directly or through a tray; the covering element is provided with a plurality of openings passing through an upper direction and a lower direction and is configured to cover the substrates at intervals; a covering space is formed between the bottom surface of the covering element and each of the substrates, and one or more parts of the side of the covering element are opened so that gas introduced into the covering element from the opening and byproducts generated during substrate processing flow to the side surface of the substrate supporting plate.
Description
Technical field
The present invention relates to substrate processing device, and more specifically, relate to and can carry out for example vacuum treatment installation of the substrate processing of etch processes, and the cladding element that for this reason uses.
Background technology
Substrate processing device comprises that forming one processes the process chamber in space, and the supported plate that is installed in this process chamber and is configured to substrate is mounted thereon.This substrate processing device is used for by electric energy being put on this processings space together with coming the surperficial of etch substrate or carry out deposition processes at this substrate to gas jet wherein.
The substrate that utilizes this substrate processing device to process can comprise for semi-conductive wafer, be used for the LCD panel glass substrate, be used for the substrate of solar cell etc.
An example as substrate processing device, have by at supported plate the substrate that is used for solar cell being installed, thereby then above this substrate, place the substrate processing device that the cladding element with a plurality of openings is used for forming on the surface of substrate microspike.Here, one of purpose that forms projection is in order to reduce on-chip light reflectivity, in order to improve the efficient of solar cell, wherein this projection may change according to the performance of equipment.
Form projection for the substrate processing device that forms microspike by above substrate, placing cladding element on the surface of substrate by following steps.
In traditional substrate processing device, in case electric energy is applied to process chamber, simultaneously gas is spurted into this process chamber, will process the space at this and form plasma.Then, plasma passes the opening of this cladding element, thus the surface of this substrate of etching.
When carrying out the substrate etching, can produce for example byproduct of fragment.The part fragment is dispersed in the bottom surface and the covering space between this substrate of this cladding element.And the fragment that remaining fragment and part are scattered is attached on the surface of this substrate, thereby as the mask in the substrate etch processes.This accelerates the formation of this substrate surface upper process.
Here, the cladding element of this substrate processing device comprises the cover part with a plurality of openings, and the whole edge that is formed at this cover part, the supporting part by this substrate or the supporting of this substrate support plate.
Yet this traditional cladding element has following problem.
At first, this covering space only is communicated with this processing space by this opening.And the side of this cladding element is covered by this support branch, thereby has disturbed air-flow and plasma.This may cause etch processes not finish smoothly.
The second, owing to do not have this fragment is discharged this covering space, most of fragment is accumulated in the surface of this substrate.This may hinder projection successfully to be formed at the surface of substrate.
Summary of the invention
Therefore, the purpose of this invention is to provide a kind of by gas, plasma, fragment etc. are flowed smoothly, and the fragment that makes required appropriate amount forms projection being retained in this covering space, and the cladding element that can successfully form on the surface of substrate the substrate processing device of projection and use for this reason.
In order to realize these and other advantage, and according to purpose of the present invention, so place imbody and broadly described provides a kind of substrate processing device, comprising: form the process chamber of processing the space; Supported plate with bottom electrode is directly installed this supported plate with one or more substrate or by pallet; And have at upper and lower to the opening that runs through formation, and the cladding element with the spaced covering substrate of this substrate tool, wherein, this cladding element forms covering space between its bottom surface and substrate, and one or more part of the side surface of this cladding element is open so that by this opening be incorporated into the gas of this cladding element and the by-product stream that during substrate is processed, generates to the side surface of this supported plate.
This cladding element can comprise the cover part with a plurality of openings; And a plurality of supporting parts, it is formed on the edge of bottom surface, described cover part, so that described cover part can with the spaced installation of described substrate tool that is installed on described pallet or the described supported plate, and have one or more open side surface.
Described a plurality of supporting part can be installed in the edge of this bottom, cover part.
This cover part can form tetragonal shape, and this supporting part can comprise a plurality of shaped elements on each summit that is installed on this cover part.
This shaped element can have the horizontal cross-section of one of the circle of forming, ellipse and polygon.
This cover part can form quadrangle, and this supporting part can be installed on some positions of this cover part but not each summit.
This cladding element can be placed on inside or the outside of this process chamber.
Distance between this cover part and this substrate can be the scope of 5mm-30mm.
Distance between this cover part and this substrate can be larger than the periphery in this cover part at the core of this cover part.
The aperture ratio of this cover part can be than large at this periphery at this core.
The opening of this cover part can be implemented as slit, and each slit has 1/2 width of distance between the bottom surface that is equal to or less than this cover part and this substrate.
One or more downward distortion prevention element that is used for the distortion downwards of this cladding element of prevention can be installed on the core of this cover part.
Each opening can at upper surface or the lower surface of this cover part, perhaps have Chamfer Edge on these two surfaces.
The pseudo-element (dummy member) of being made by the material identical with this substrate can be installed on the periphery of this substrate in addition.
In order to realize these and other advantage, and according to purpose of the present invention, so place imbody and broadly described also provides a kind of cladding element for this substrate processing device.
Cladding element according to this substrate processing device of the present invention and for this reason use has the following advantages.
At first, move by the side surface to this supported plate, pass one or more open side surface of this cladding element, gas, plasma, fragment etc. flow into the bottom surface of this cladding element and the covering space between the substrate smoothly.And the fragment that only is used to form the required appropriate amount of projection is retained in this covering space.Therefore, projection can successfully be formed at the surface of substrate and cladding element thereof.
Second, can also be equipped with downward distortion prevention post owing to be used under the cladding element with opening covers the state of the supported plate with the substrate that is located thereon, carrying out the vacuum treated substrate processing device of substrate, be used for keeping should being out of shape of interval between this cladding element and this pallet or this supported plate downwards and prevent the post can be by the deadweight that prevents this cladding element so that each substrate is successfully realized vacuum treatment.
Aforementioned and other purpose of the present invention, feature, aspect and advantage will be from below in conjunction with becoming more obvious the accompanying drawing detailed description of the present invention.
Description of drawings
This accompanying drawing is included be used to a further understanding of the present invention is provided, and incorporates and consist of the part of this specification into, and illustration embodiment of the present invention are used for explaining principle of the present invention together with the description.
Among the figure:
Fig. 1 is the profile according to substrate processing device of the present invention;
Fig. 2 is the perspective view of cladding element of the substrate processing device of Fig. 1;
Fig. 3 A and 3B show the profile of preferred embodiment of cladding element of the substrate processing device of Fig. 1;
Fig. 4 A to 4D shows the upward view of preferred embodiment of cladding element of the substrate processing device of Fig. 1.
Embodiment
With reference now to accompanying drawing, describes the present invention in detail.
Below will set forth in more detail according to substrate processing device of the present invention and reach the cladding element that for this reason uses.
Fig. 1 is the profile according to substrate processing device of the present invention, Fig. 2 is the perspective view of cladding element of the substrate processing device of Fig. 1, Fig. 3 A and 3B show the cutaway view of preferred embodiment of cladding element of the substrate processing device of Fig. 1, and Fig. 4 A and 4D show the upward view of preferred embodiment of cladding element of the substrate processing device of Fig. 1.
As shown in Figure 1, and substrate processing device of the present invention comprise process chamber 100 that form to process space S; Have bottom electrode and be configured to directly install or pass through the supported plate 130 that pallet 20 assembles one or more substrates 10 thereon; And have and run through upper and lower to a plurality of openings 210 that form and be configured to cover the cladding element 200 of this substrate 10.
Can use need substrate to process, for example etched any substrate is as substrate 10.Especially, can form its lip-deep microspike by etch processes with the substrate of being made by monocrystalline silicon or polysilicon, be used for solar cell.
In this process chamber 100, installed and be used for to be spurted into the shower nozzle 140 of this processing space S by the gas that gas feeding apparatus 141 is supplied with, be used for directly or the supported plate 130 by pallet 20 assembling substrates 10, this processes the gas extraction system (not shown) of space S internal pressure and Exhaust Gas to be used for control, etc.
As shown in Figure 1, substrate support plate 130 is configured to directly substrate 10 is fitted thereon, and perhaps the top pallet 20 that has assembled substrate 10 is mounted thereon.And supported plate 130 is equipped with the bottom electrode (not shown) that has applied electric energy, so that in processing space S the reaction for the substrate processing can occur, for example forms plasma.
Here, can in every way electric energy be applied on this bottom electrode.For example, can be with process chamber 100 and shower nozzle 140 ground connection, and one or two radio-frequency power supply (RF power) is applied to this bottom electrode.Perhaps, can be with this bottom electrode ground connection, and radio-frequency power supply can be applied to process chamber 100 and shower nozzle 140.Also or, the first radio-frequency power supply can be applied to this bottom electrode, and the second radio-frequency power supply can be applied to process chamber 100 and shower nozzle 140.
Cladding element 200 can have according to application target various structures.As illustrated in fig. 1 and 2, this cladding element 200 can comprise cover part 220, it has a plurality of openings 210, and a plurality of supporting parts 230, it is formed at the edge of cover part 220 and has one or more open side, so that this cover part 220 can separate default spacing with the substrate 10 that is assemblied on pallet 20 or the supported plate 130.
Cladding element 200 has assembled between the pallet 20 of substrate 10 or the supported plate 130 at self and its and has formed covering space ES.Correspondingly, the fragment that produces after by the plasma etching substrate of introducing covering space ES by opening 210 is retained among the covering space ES.Fragment is attached on the surface of substrate 10, to form microspike thereon.This has set forth the purpose of using this cladding element is an example that forms microspike at this substrate.
Here, consider for the space that holds therein fragment, and form speed by the projection of this fragment, the distance between cladding element 200 and pallet 20 or the supported plate 130 is preferably the scope of 5mm～30mm.
The opening 210 of cover part 220 can have various shape and size according to the application target of cladding element 200.As shown in Figure 2, the form that opening 210 can the crack realizes.In this case, the width W of opening 210 is preferably 1/2 of distance B between the bottom surface that is equal to or less than cover part 220 and the substrate 10.
As shown in Figure 1, opening 210 can be in the cover part 220 upper surface or lower surface or this two surfaces have Chamfer Edge.
When cladding element 200 covering substrate 10, this microspike can according to for example based on the core of the upper surface of supported plate 130 and the position of periphery, anisotropically be formed at the surface of substrate 10.
Correspondingly, cladding element 200 can be configured so that the distance of upper surface from pallet 20 or supported plate 130 220 the bottom surface to the cover part remains unchanged.Perhaps, shown in Fig. 3 A and 3B, cladding element 200 can be configured so that this distance can keep different according to this core and periphery.
More specifically, as shown in Figure 3A, the bottom surface of this cover part 220 can form at core more protruding.And shown in Fig. 3 B, the bottom surface of cover part 220 can form at core more caves in.
Cladding element 220 can be configured so that the aperture ratio of opening 210 can be according to core with periphery and different.Here, cladding element 220 can have the aperture ratio higher than periphery at core.
Supporting part 230 is used for realizing processing space S and covering space ES by pallet 20 or the fixed range between the supported plate 130 keeping cover part 220 and have a substrate 10 that is fitted thereon.Supporting part 230 can form one with cover part 220 on the whole, perhaps can separate formation with cover part 220.Here, supporting part 230 can be made by the material different from cover part 220.
Preferably, support section 230 forms the bottom surface of cover part 220 and the covering space ES between the substrate 10, so that gas and plasma can be introduced covering space ES smoothly.And, supporting part 230 is preferably formed for having at least one open sides surface, so that be incorporated into the gas of cladding element 200 and the side surface that at least a portion in the rear byproduct that produces of substrate processing can be shifted to supported plate 130 by opening 210.
The side that makes cladding element 200 is that open supporting part 230 can have arbitrary disposition.Shown in Fig. 4 A to 4D, supporting part 230 can have various configurations.
For example, cover part 220 can form quadrangle, and supporting part 230 can be implemented as a plurality of shaped elements on four summits that are installed on cover part 220.Here, shaped element also can be installed on the edge of cover part 220 but not the summit.
Shown in Fig. 4 A to 4C, shaped element can have various cross sectional shapes in the horizontal direction, for example circular (or oval), ' L ' shape, and quadrangle (polygon).
Perhaps, shown in Fig. 4 D, a plurality of supporting parts 230 can be installed in some positions but not four summits.Here, the summit is open.
Also or, although not shown, a plurality of supporting parts 230 can the interval be installed in the edge of 220 bottom surfaces, cover part.
A pair of cock (tap) (not shown) can be installed in supporting part 230, so that cladding element 200 can be vertical mobile by additional transfer equipment (not shown), in order to cover pallet 20 or the supported plate 130 that is equipped with substrate 10 on it.
The cover part 220 of cladding element 200 may be out of shape downwards owing to its thickness is little.And when cover part 220 has larger size, when having the substrate 10 of larger sized substrate 10 or greater number with covering, it may be out of shape downwards at core owing to its deadweight.Perhaps this cover part 220 may be out of shape downwards owing to the heat that produces during the vacuum treatment process.
If cover part 220 is out of shape excessively downwards, may affect the formation speed of fragment, the shape of opening 210 is imprinted on the substrate 10, thereby forms spot thereon.This may cause projection anisotropically to be formed at the surface of substrate 10.
In order to address these problems, as shown in Figure 1, one or more post of distortion prevention downwards for the bottom surface of keeping cladding element 200 and the default spacing between the supported plate 130 (or pallet 20) can be installed between cladding element 200 and the supported plate 130.
The post 300 of distortion prevention downwards can have arbitrary structures, with the bottom surface of keeping cladding element 200 and the interval between the supported plate 130.When considering with the contacting of plasma, the post of distortion prevention downwards 300 is preferably made by the material that plasma has a high resistance, for example aluminium, aluminium alloy, silicones and teflon (Teflon).
The post 300 of distortion prevention downwards can be implemented as the independent component that is installed separately with cladding element 200 and supported plate 130.Perhaps, the post 300 of distortion prevention downwards can screw connecting mode, being connected one of at least of the bottom surface of fit system etc. and cladding element 200 and supported plate 130.
The post 300 of distortion prevention downwards can be installed on the core of cladding element 200.Perhaps, a plurality of downward distortion prevention posts 300 can be installed in a plurality of lattice points of cover part 220, in order to minimize the downward distortion of cladding element 200 in the situation of the not serious installation that affects substrate 10.Here, according to each position, consider the downward distortion of cover part 220, the downward distortion prevention post 300 that is positioned at each lattice point forms has suitable length.
Downward distortion prevention post 300 for interval between the bottom surface of keeping cladding element 200 and the supported plate 130 forms column.And the post 300 of distortion prevention downwards can have various cross sectional shapes in the horizontal direction, for example circle, ellipse and polygon.
As shown in Figure 1, the pseudo-element 11 of being made by the material (for example silicones) identical with substrate 10 can also be installed on along the periphery of substrate 10 on pallet 20 or the supported plate 130.Preferably, substrate 10 is made by identical material with pseudo-element 11, for example monocrystalline silicon or polysilicon.
Aforesaid embodiment and advantage only are exemplary, but not are interpreted as limiting the disclosure.This instruction can easily be applied to the device of other type.This specification is intended to illustration, and the scope of unrestricted claim.Many replacements, correction and modification are obvious to one skilled in the art.The feature of typical embodiments described herein, structure, method and other characteristics can make up in various manners, to obtain typical embodiments other and/or that replace.
Eigen can be with embodied in various forms in the situation that does not depart from its characteristics, also be to be understood that, unless mode specifies in addition, above-mentioned embodiment is not limited by any details of above stated specification, but should in appended claim limited range, be widely interpreted, therefore fall into border and the boundary of this claim, perhaps in the equivalent of these borders and boundary change and revise the claim that is intended to by appended and comprise.
Claims (12)
1. a substrate processing device comprises: form the process chamber of processing the space; Supported plate with bottom electrode, described supported plate directly or by pallet is equipped with one or more substrate; And cladding element, it has and runs through upper and lower to a plurality of openings that form, and has the compartment of terrain with described substrate and cover described substrate,
Wherein, described cladding element forms covering space between its bottom surface and described substrate, and one or more part of described cladding element side surface is for open so that by described opening be incorporated into the gas of described cladding element and the by-product stream that during substrate is processed, produces to the side surface of described supported plate;
Wherein, described cladding element comprises:
Cover part with a plurality of openings; And
A plurality of supporting parts, it is formed on the edge of bottom surface, described cover part, so that described cover part can have the compartment of terrain installation with the described substrate that is assemblied on described pallet or the described supported plate.
2. substrate processing device as claimed in claim 1, wherein, described a plurality of supporting parts are installed on the edge of bottom, described cover part at certain intervals.
3. substrate processing device as claimed in claim 1, wherein, described cover part forms quadrangle, and described supporting part comprises a plurality of shaped elements on each summit that is installed on described cover part.
4. substrate processing device as claimed in claim 3, wherein, described shaped element has a kind of horizontal cross-section in the circle of forming, ellipse and the polygon.
5. substrate processing device as claimed in claim 1, wherein, described cover part forms quadrangle, and described supporting part is installed in some positions of described cover part but not each summit.
6. such as each described substrate processing device of claim 1 to 5, wherein, the distance between described cover part and the described substrate is in the scope of 5mm-30mm.
7. such as each described substrate processing device of claim 1 to 5, wherein, the distance between described cover part and the described substrate is long at the periphery of described cover part at the core ratio of described cover part.
8. such as each described substrate processing device of claim 1 to 5, wherein, the opening of described cover part is embodied as slit, and each slit has 1/2 width of distance between the bottom surface that is equal to or less than described cover part and the described substrate.
9. such as each described substrate processing device of claim 1 to 5, wherein, one or more is used for preventing the downward distortion of described cladding element distortion downwards to prevent element to be installed in the core of described cover part.
10. such as each described substrate processing device of claim 1 to 5, wherein, each described opening is at upper surface or the lower surface of described cover part, or has Chamfer Edge on these two surfaces.
11. such as each described substrate processing device of claim 1 to 5, wherein, the pseudo-element of being made by the material identical with described substrate is installed in the periphery of described substrate.
12. be used for the cladding element such as each described substrate processing device of claim 1 to 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910207462 CN102054659B (en) | 2009-11-05 | 2009-11-05 | Substrate processing device and covering element thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910207462 CN102054659B (en) | 2009-11-05 | 2009-11-05 | Substrate processing device and covering element thereof |
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| Publication Number | Publication Date |
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| CN102054659A CN102054659A (en) | 2011-05-11 |
| CN102054659B true CN102054659B (en) | 2013-04-10 |
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| CN 200910207462 Expired - Fee Related CN102054659B (en) | 2009-11-05 | 2009-11-05 | Substrate processing device and covering element thereof |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1367933A (en) * | 1999-06-30 | 2002-09-04 | 兰姆研究公司 | Gas distribution apparatus for semiconductor processing |
| CN101469416A (en) * | 2007-12-26 | 2009-07-01 | 周星工程股份有限公司 | Apparatus for treating substrate |
-
2009
- 2009-11-05 CN CN 200910207462 patent/CN102054659B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1367933A (en) * | 1999-06-30 | 2002-09-04 | 兰姆研究公司 | Gas distribution apparatus for semiconductor processing |
| CN101469416A (en) * | 2007-12-26 | 2009-07-01 | 周星工程股份有限公司 | Apparatus for treating substrate |
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| CN102054659A (en) | 2011-05-11 |
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