CN102054455A - Grid driving circuit with automatic linear temperature adjusting function - Google Patents

Grid driving circuit with automatic linear temperature adjusting function Download PDF

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Publication number
CN102054455A
CN102054455A CN 201110020126 CN201110020126A CN102054455A CN 102054455 A CN102054455 A CN 102054455A CN 201110020126 CN201110020126 CN 201110020126 CN 201110020126 A CN201110020126 A CN 201110020126A CN 102054455 A CN102054455 A CN 102054455A
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voltage
order
coupled
circuit
temperature
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CN 201110020126
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CN102054455B (en
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刘康义
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AU Optronics Corp
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AU Optronics Corp
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Abstract

The invention provides a gate driving circuit with an automatic linear temperature adjusting function, which comprises an automatic linear temperature adjusting circuit, a negative charge pump and a plurality of shift registers. The automatic linear temperature adjusting circuit is used for outputting a grid high voltage which does not change with the temperature above a preset temperature and has linear temperature coefficient characteristics below the preset temperature; the negative charge pump is used for outputting grid low voltage; and the plurality of shift registers are coupled to the automatic linear temperature adjustment circuit and the negative charge pump, wherein each shift register is used for driving at least one scanning line of the liquid crystal panel. In addition, the automatic linear temperature adjusting circuit, the negative charge pump and the plurality of gate driving units are integrated on the glass substrate, and the automatic linear temperature adjusting circuit is a single chip. The invention can solve the problem that the grid drive circuit is abnormally started at low temperature and can also reduce the power loss of the whole system.

Description

Have the auto linear temperature and adjust the gate driver circuit of function
Technical field
The present invention relates to a kind of gate driver circuit, particularly relate to a kind of gate driver circuit that the auto linear temperature is adjusted function that has.
Background technology
In the prior art, gate driver circuit is integrated on glass replace to use gate driving IC.But because technology and photomask quantitative relation make that the characteristic of N type thin film transistor (TFT) (TFT NMOS) is poorly next than CMOS transistor (CMOS).Therefore under the condition of same current, the gate-source voltage (VGS) of N type thin film transistor (TFT) must be very high and component size also to design very big.In addition,, can make shift register (shift register) circuit that is synthesized when low temperature opens the beginning, misoperation takes place because of technological factor causes the element characteristic drift.Please refer to Figure 1A, Figure 1B and Fig. 1 C, Figure 1A is the synoptic diagram that explanation is implemented in the shift register on the glass substrate, Figure 1B is under the explanation normal running temperature in the shift register, the oscillogram of start signal ST, time clock CLK, node CP1 and output node SR_OUT, Fig. 1 C illustrates circuit operation in the shift register under the cryogenic conditions, the oscillogram of start signal ST, time clock CLK, node CP1 and output node SR_OUT.Shown in Figure 1A and Figure 1B, when room temperature started, start signal ST can rise to node CP1 the potential level near start signal ST earlier.When time clock CLK was noble potential, the stray capacitance Cgd of time clock CLK by N type thin film transistor (TFT) M2 promoted once more with the mode of coupling (coupling) potential level with node CP1.This moment, N type thin film transistor (TFT) M2 can be unlocked, and CK is sent to SR_OUT with time clock, reaches the output of shift register cell.Shown in Figure 1A and Figure 1B, but when cryogenic conditions starts, because the amount of drive current of N type thin film transistor (TFT) M2 contribution itself can reduce (that is the degree of element conductive is weak), under the fixing situation of gate-source voltage and component size, add the electric leakage of N type thin film transistor (TFT) M4, can make the current potential of output node SR_OUT to promote, and cause the output signal of output node SR_OUT unusual.
Please refer to Fig. 2, Fig. 2 is the synoptic diagram of the gate driver circuit 200 of the exportable grid high voltage (VGH) with temperature change of DESCRIPTION OF THE PRIOR ART.Gate driver circuit 200 uses thermistor (Thermistor) RT, positive charge pump (Positive Charge-Pump) 202 and the non-inverting amplifier of arranging in pairs or groups (Non-Inverting Amplifier) 204 to realize exportable grid high voltage VGH with temperature change.When temperature variation, the current potential V2 of the output terminal of non-inverting amplifier 204 also can change thereupon.Because V2 is the first order substrate input voltage of positive charge pump, so the grid high voltage of positive charge pump 202 outputs is also with temperature change.
Because gate driver circuit 200 needs N level charge pump (Charge Pump) circuit that increase more, increased the usable floor area of printed circuit board (PCB) (PCBA), make cost of goods manifactured increase, and overall power dissipation also can increase.Because thermistor (Thermistor) RT is arranged on the printed circuit board (PCB), therefore the temperature sensing for face glass 206 1 ends is " sensing (indirect) indirectly ", the main grid high voltage of still adjusting output according to the temperature that senses on the printed circuit board (PCB) so can cause unnecessary power attenuation.Owing to use non-inverting amplifier 204 to amplify the voltage difference that reflects because of temperature change, therefore when the linearity deficiency of thermistor RT, can reflect a big jump (Step Voltage), cause the lifting of power attenuation.
Summary of the invention
For overcoming the defective of prior art, one embodiment of the invention provide a kind of gate driver circuit that the auto linear temperature is adjusted function that has.This gate driver circuit comprises an auto linear temperature and adjusts circuit, a negative charge pump and a plurality of shift register.It is not reach a grid high voltage that has the linear temperature coefficient characteristic under this predetermined temperature with temperature change in order to be output on the predetermined temperature that this auto linear temperature is adjusted circuit; This negative charge pump is in order to export a grid low-voltage; Reach these a plurality of shift registers and be coupled to this auto linear temperature adjustment circuit and this negative charge pump, wherein each shift register is in order to drive at least one sweep trace of a liquid crystal panel; Wherein this auto linear temperature is adjusted circuit, this negative charge pump reaches these a plurality of drive element of the grid and is integrated on the glass substrate, and this auto linear temperature adjustment circuit is a single-chip.
The invention provides a kind of gate driver circuit that the auto linear temperature is adjusted function that has, be to utilize an auto linear temperature to adjust the circuit generation and be output on the predetermined temperature not reach the grid high voltage that under this predetermined temperature, has a linear temperature coefficient characteristic, use so that a plurality of shift registers directly to be provided with temperature change.So, can solve this gate driver circuit in the abnormal problem of cold-starting.In addition, the high-tension linear temperature coefficient characteristic of this grid can be with thermotonus to reduce the total system power attenuation.In addition, the present invention is integrated into one chip simultaneously and directly builds and put on a glass substrate, not only can significantly reduce a printed circuit board (PCB) usable floor area, outside number of elements and the whole cost of using, but and this variation of temperature on glass of direct sensing to adjust this grid high voltage.
Description of drawings
Figure 1A is the synoptic diagram that explanation is implemented in shift register on glass.
Figure 1B is under the explanation normal running temperature in the shift register, the oscillogram of start signal, time clock, node and output node.
Fig. 1 C is that explanation is lower than under the normal running temperature in the shift register oscillogram of start signal, time clock, node and output node.
Fig. 2 is the synoptic diagram of the exportable high-tension gate driver circuit of grid with temperature change of DESCRIPTION OF THE PRIOR ART.
Fig. 3 has the synoptic diagram that the auto linear temperature is adjusted the gate driver circuit of function for one embodiment of the invention explanation.
Fig. 4 A is the synoptic diagram that the explanation level is adjusted the relation between voltage and the temperature.
Fig. 4 B is the synoptic diagram of the relation between explanation control signal and the temperature.
Fig. 4 C is the synoptic diagram of the relation between explanation grid high voltage and the temperature.
[main description of reference numerals]
200,300 gate driver circuits
202 positive charge pumps
204 non-inverting amplifiers
206 face glasss
302 auto linear temperature are adjusted circuit
304 negative charge pumps
More than 306 shift register
308 glass substrates
3022 temperature sensing units
3024 electric current and voltage generation units
3026 signal correction unit
3028 slope adjustment units
3030 level adjustment units
3032 temperature are adjusted output unit
3034 DC-DC voltage boosting change-over circuits
30222 constant current sources
30224 double carriers transistors
30,266 first amplifiers
30,282 second amplifiers
30302P type metal oxide semiconductor transistor
30322 comparers
30324 multiplexers
30342 voltage up converting circuit
The VC control signal
VS sensing output voltage
V1 voltage
VF signal correction voltage
The VR slope is adjusted voltage
The VREG level is adjusted voltage
R2 second resistance
R3 the 3rd resistance
R4 the 4th resistance
R5 the 5th resistance
R6 the 6th resistance
I, IREF decide electric current
VZ imports correction voltage
The VREF reference voltage
The RT thermistor
The CP1 node
The SR_OUT output node
The ST start signal
The CLK time clock
M2, M4N type thin film transistor (TFT)
The Cgd stray capacitance
The T predetermined temperature
VGH grid high voltage
The VGL grid low-voltage
VDD first voltage
Embodiment
Please refer to Fig. 3, Fig. 3 has the synoptic diagram that the auto linear temperature is adjusted the gate driver circuit 300 of function for one embodiment of the invention explanation.Gate driver circuit 300 comprises the auto linear temperature and adjusts circuit 302, negative charge pump 304 and a plurality of shift register 306.The auto linear temperature is adjusted circuit 302 and is not reached the grid high voltage VGH that has the linear temperature coefficient characteristic under predetermined temperature T with temperature change in order to be output on the predetermined temperature T.The auto linear temperature is adjusted circuit 302 and is comprised temperature sensing unit 3022, electric current and voltage generation unit 3024, signal correction unit 3026, slope adjustment unit 3028, level adjustment unit 3030, temperature adjustment output unit 3032 and DC-DC voltage boosting change-over circuit 3034.Negative charge pump 304 is in order to output grid low-voltage VGL.A plurality of shift registers 306 are coupled to the auto linear temperature and adjust circuit 302, DC-DC voltage boosting change-over circuit 3034 and negative charge pump 304, in order to receiving grid very high voltage VGH and grid low-voltage VGL, wherein each shift register is in order to drive at least one sweep trace of liquid crystal panel.In addition, the auto linear temperature is adjusted circuit 302, negative charge pump 304, DC-DC voltage boosting change-over circuit 3034 and a plurality of drive element of the grid 306 and is integrated on the glass substrate 308, and auto linear temperature adjustment circuit 302 is integrated into one chip.
Temperature sensing unit 3022 comprises constant current source 30222 and double carriers transistor 30224; Constant current source 30222 is decided electric current I in order to export; Double carriers transistor 30224 has first end, decide electric current I in order to receive, second end, be coupled to first end, the 3rd end, hold, the sensing output voltage V S with linear negative temperature coefficient feature that wherein temperature sensing unit 3022 is exported is second end of double carriers transistor 30224 and the cross-pressure between the 3rd end with being coupled to.Electric current and voltage generation unit 3024 is in order to produce reference voltage VREF, the signal correction input voltage VZ that is not subjected to technology and temperature effect and to decide electric current I REF.
Signal correction unit 3026 is coupled to temperature sensing unit 3022 and electric current and voltage generation unit 3024, handles output signal correction voltage VF in order to sensing output voltage V S is carried out signal correction.Signal correction unit 3026 comprises first amplifier 30266, second resistance R 2 and the 3rd resistance R 3.First amplifier 30266 has first input end, and in order to receive sensing output voltage V S, second input end in order to receive voltage V1, reaches output terminal, in order to output signal correction voltage VF; Second resistance R 2 has first end, in order to receive input correction voltage VZ, reaches second end, is coupled to second input end of first amplifier 30266; The 3rd resistance R 3 has first end, is coupled to second input end of first amplifier 30266, and second end, is coupled to the output terminal of first amplifier 30266.And signal correction unit 3026 is according to formula (1), produces and output signal correction voltage VF.By formula (1) as can be known, signal correction voltage VF has the linear temperature coefficient characteristic.
VF = VS + ( VS - VREF ) R 3 R 2 - - - ( 1 )
Slope adjustment unit 3028 is coupled to signal correction unit 3026, and in order to adjustment and amplifying signal correction voltage VF, and output voltage gradient is adjusted voltage VR.Slope adjustment unit 3028 comprises the 4th resistance R 4, the 5th resistance R 5 and second amplifier 30282.The 4th resistance R 4 has first end, in order to received signal correction voltage VF, and second end; The 5th resistance R 5 has first end, is coupled to second end of the 4th resistance R 4, and second end; Second amplifier 30282 has first input end, is coupled to second end of the 4th resistance R 4, second input end, and end reaches output terminal with being coupled to, is coupled to second end of the 5th resistance R 5, adjusts voltage VR in order to output voltage gradient.And slope adjustment unit 3028 is according to formula (2), produces and output voltage gradient adjustment voltage VR.By formula (2) as can be known, to adjust voltage VR be that the temperature coefficient characteristics of signal correction voltage VF is anti-phase and adjust it and amplify slope to slope.
VR = VF × ( - R 5 R 4 ) - - - ( 2 )
Level adjustment unit 3030 is coupled to slope adjustment unit 3028, adjusts the level of voltage VR in order to adjust slope, adjusts voltage VREG with output level.Level adjustment unit 3030 comprises P-type mos transistor 30302 and the 6th resistance R 6.P-type mos transistor 30302 has first end, and in order to receive the first voltage VDD, second end is adjusted voltage VR in order to receive slope, and the 3rd end, adjusts voltage VREG in order to output level.Because level is adjusted voltage VREG and exported by the 3rd end (drain electrode end) of P-type mos transistor 30302,, level has opposite temperature coefficient characteristics with slope adjustment voltage VR so adjusting voltage VREG.Please refer to Fig. 4 A, Fig. 4 A is the synoptic diagram that the explanation level is adjusted the relation between voltage VREG and the temperature.
Temperature is adjusted output unit 3032 and is coupled to level adjustment unit 3030 and electric current and voltage generation unit 3024, adjusts voltage VREG in order to decision output reference voltage VREF or level.Temperature is adjusted output unit 3032 and is comprised comparer 30322 and multiplexer 30324.Comparer 30322 has first input end, is coupled to transistorized the 3rd end of P-type mos 30302, the second input ends, in order to receive reference voltage VREF, and output terminal, in order to output control signal VC, wherein comparer 30322 is a hysteresis comparator.Comparer 30322 can be set at predetermined temperature T when following, and output has the control signal VC of logic high potential " 1 ", and when predetermined temperature T was above, output had the control signal VC of logic low potential " 0 ".Please refer to Fig. 4 B, Fig. 4 B is the synoptic diagram of the relation between explanation control signal VC and the temperature.Multiplexer 30324 has first input end, in order to receive reference voltage VREF, second input end, be coupled to the 3rd end of P-type mos transistor 30302, adjust voltage VREG in order to incoming level, the 3rd input end is coupled to the output terminal of comparer 30322, in order to receive control signal VC, reach output terminal.Multiplexer 30324 is according to the control signal VC of logic high potential " 1 " or the control signal VC of logic low potential " 0 ", and output level is adjusted voltage VREG or reference voltage VREF respectively.But the present invention is not limited to multiplexer 30324 and adjusts voltage VREG according to the control signal VC output level of logic high potential " 1 ", and multiplexer 30324 is according to the control signal VC of logic low potential " 0 ", output reference voltage VREF.
DC-DC voltage boosting change-over circuit 3034 is coupled to temperature and adjusts output unit 3032, in order to output grid high voltage VGH.DC-DC voltage boosting change-over circuit 3034 comprises voltage up converting circuit 30342, the 7th resistance R 7 and the 8th resistance R 8.Voltage up converting circuit 30342 has first input end, adjusts voltage VREG in order to incoming level, and second input end, and output terminal are in order to output grid high voltage VGH; The 7th resistance R 7 has first end, in order to output grid high voltage VGH, reaches second end, is coupled to second input end of voltage up converting circuit; The 8th resistance R 8 has first end, is coupled to second input end of voltage up converting circuit, and second end, end with being coupled to.And bleeder circuit 3034 is according to formula (3), produces and output grid high voltage VGH.
VGH = V ′ × ( 1 + R 7 R 8 ) - - - ( 3 )
The V ' of its Chinese style (3) adjusts VREG for level when predetermined temperature T is following, when predetermined temperature T is above, be reference voltage VREF.Please refer to Fig. 4 C, Fig. 4 C is the synoptic diagram of the relation between explanation grid high voltage VGH and the temperature.Shown in Fig. 4 C, grid high voltage VGH is definite value when predetermined temperature T is above, when predetermined temperature T is following, has the linear temperature coefficient characteristic.
In sum, gate driver circuit with auto linear temperature adjustment function provided by the present invention, be to utilize the auto linear temperature to adjust the circuit generation and be output on the predetermined temperature not reach the grid high voltage that under predetermined temperature, has the linear temperature coefficient characteristic, use so that shift register directly to be provided with temperature change.So, can solve gate driver circuit in the abnormal problem of cold-starting.In addition, the high-tension linear temperature coefficient characteristic of grid can be with thermotonus to reduce the total system power attenuation.In addition, the present invention is integrated into one chip simultaneously and directly builds and put on glass substrate, not only can significantly reduce printed circuit board (PCB) usable floor area, outside number of elements and the whole cost of using, but and direct sensing variation of temperature on glass with adjustment grid high voltage.
The above only is preferred embodiment of the present invention, and all equalizations of doing according to claim of the present invention change and modify, and all should belong to covering scope of the present invention.

Claims (8)

1. one kind has the gate driver circuit that the auto linear temperature is adjusted function, comprises:
One auto linear temperature is adjusted circuit, in order to export a grid high voltage;
One negative charge pump is in order to export a grid low-voltage; And
A plurality of shift registers are coupled to this auto linear temperature and adjust circuit and this negative charge pump, and wherein each shift register is in order to drive at least one sweep trace of a liquid crystal panel;
Wherein this auto linear temperature adjustment circuit, this negative charge pump and these a plurality of drive element of the grid are to be integrated on the glass substrate, and this auto linear temperature adjustment circuit is a single-chip.
2. gate driver circuit as claimed in claim 1, wherein this auto linear temperature adjustment circuit comprises:
One temperature sensing unit has a sensing output voltage of linear negative temperature coefficient in order to output device;
One electric current and voltage generation unit is in order to produce a reference voltage;
One signal correction unit is coupled to this temperature sensing unit and this electric current and voltage generation unit, handles in order to this sensing output voltage is carried out a zero-in, exports a signal correction voltage;
One slope adjustment unit is coupled to this signal correction unit, in order to oppositely and amplify this signal correction voltage, adjusts voltage to export a slope;
One level adjustment unit is coupled to this slope adjustment unit, adjusts the level of voltage in order to adjust this slope, adjusts voltage to export a level;
One temperature is adjusted output unit, is coupled to this level adjustment unit and this electric current and voltage generation unit, adjusts voltage in order to decision this reference voltage of output or this level; And
One DC-DC voltage boosting change-over circuit is coupled to this temperature and adjusts output unit, in order to export this grid high voltage.
3. gate driver circuit as claimed in claim 2, wherein this temperature sensing unit comprises:
One constant current source is in order to export certain electric current; And
One double carriers transistor has one first end, should decide electric current in order to receive, and one second end is coupled to this first end, and one the 3rd end is coupled to a ground end;
Wherein this sensing output voltage is the cross-pressure between transistorized second end of this double carriers and the 3rd end.
4. gate driver circuit as claimed in claim 2, wherein this signal correction unit comprises:
One first amplifier has a first input end, and in order to receive this sensing output voltage, one second input end, and an output terminal are in order to export this signal correction voltage;
One second resistance has one first end, in order to receive this reference voltage, reaches one second end, is coupled to second input end of this first amplifier; And
One the 3rd resistance has one first end, is coupled to second input end of this first amplifier, and one second end, is coupled to the output terminal of this first amplifier.
5. gate driver circuit as claimed in claim 2, wherein this slope adjustment unit comprises:
One the 4th resistance has one first end, in order to receive this signal correction voltage, reaches one second end;
One the 5th resistance has one first end, is coupled to second end of the 4th resistance, and one second end; And
One second amplifier has a first input end, is coupled to second end of the 4th resistance, and one second input end is coupled to this ground end, and an output terminal, is coupled to second end of the 5th resistance, adjusts voltage in order to export this slope.
6. gate driver circuit as claimed in claim 2, wherein this level adjustment unit comprises:
One P-type mos transistor has one first end, and in order to receive one first voltage, one second end is adjusted voltage in order to receive this slope, and one the 3rd end, adjusts voltage in order to export this level; And
One the 6th resistance has one first end, is coupled to transistorized the 3rd end of this P-type mos, and one second end, is coupled to this ground end.
7. gate driver circuit as claimed in claim 2, wherein this temperature adjustment output unit comprises:
One comparer has a first input end, is coupled to transistorized the 3rd end of this P-type mos, and one second input end in order to receive this reference voltage, reaches an output terminal, in order to export a control signal; And
One multiplexer, has a first input end, in order to receive this reference voltage, one second input end is coupled to transistorized the 3rd end of this P-type mos, adjust voltage in order to receive this level, one the 3rd input end is coupled to the output terminal of this comparer, in order to receive this control signal, and an output terminal, adjust voltage or this reference voltage in order to export this level;
Wherein this comparer is a hysteresis comparator.
8. gate driver circuit as claimed in claim 2, wherein this DC-DC voltage boosting change-over circuit comprises:
One voltage up converting circuit has a first input end, adjusts voltage in order to receive this level, and one second input end, and an output terminal are in order to export this grid high voltage;
One the 7th resistance has one first end, in order to export this grid high voltage, reaches one second end, is coupled to second input end of this DC-DC voltage boosting change-over circuit; And
One the 8th resistance has one first end, is coupled to second input end of this DC-DC voltage boosting change-over circuit, and one second end, is coupled to this ground end.
CN2011100201261A 2010-12-14 2011-01-11 Grid driving circuit with automatic linear temperature adjusting function Expired - Fee Related CN102054455B (en)

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TW99143675A TWI406502B (en) 2010-12-14 2010-12-14 Gate driver which has an automatic linear temperature adjustment function

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CN103869866B (en) * 2012-12-14 2015-12-02 力智电子股份有限公司 Reference voltage generator of grid drive circuit and reference voltage generating method
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CN103985339A (en) * 2013-02-08 2014-08-13 元太科技工业股份有限公司 Display panel
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CN105845184A (en) * 2016-03-21 2016-08-10 京东方科技集团股份有限公司 Shifting register unit and driving method and driving device thereof, and grid electrode driving circuit
WO2017190532A1 (en) * 2016-05-06 2017-11-09 京东方科技集团股份有限公司 Temperature compensation circuit, display panel and temperature compensation method
US10204588B2 (en) 2016-05-06 2019-02-12 Boe Technology Group Co., Ltd. Temperature compensation circuit, display panel and temperature compensation method
CN105741811A (en) * 2016-05-06 2016-07-06 京东方科技集团股份有限公司 Temperature compensating circuit, display panel and temperature compensating method
CN110090767A (en) * 2018-01-30 2019-08-06 精膜科技股份有限公司 A kind of supersonic driver with self-correction function
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TW201225535A (en) 2012-06-16
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