CN102184702A - Voltage booster circuit - Google Patents
Voltage booster circuit Download PDFInfo
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- CN102184702A CN102184702A CN2011101112142A CN201110111214A CN102184702A CN 102184702 A CN102184702 A CN 102184702A CN 2011101112142 A CN2011101112142 A CN 2011101112142A CN 201110111214 A CN201110111214 A CN 201110111214A CN 102184702 A CN102184702 A CN 102184702A
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Abstract
A boost circuit comprises a boost module, a feedback circuit and a pulse width modulation module. The boost module comprises an input end and an output end, wherein the input end receives an input potential, and the output end provides an output potential. The feedback circuit is electrically coupled to the output end to provide a corresponding feedback potential according to the output potential. The pulse width modulation module controls when to conduct an electric path from the boosting module to the ground through the pulse width modulation module, so that the output potential is linearly changed within a specific temperature interval.
Description
[technical field]
The invention relates to the booster circuit that drives display panel, and particularly adjust the booster circuit of the driving display panel of output potential relevant for a kind of varying with temperature.
[background technology]
In order to reduce cost of products, the flat display driving circuit is gradually with grid technology (Gate-On-Array on the array, GOA) original glass flip chip encapsulation (Chip-On-Glass, Driving technique COG), thereby the use amount that can save gate driving IC (Gate IC) have been replaced.GOA framework and COG framework all need to use offset buffer (shift register) and level shifter (level shift).But the GOA framework is to utilize thin film transistor (TFT) n type metal oxide-semiconductor treatment technology (TFT n-MOSprocess) to synthesize offset buffer, and level shifter is produced on the glass substrate.And the COG framework is offset buffer and level shifter to be integrated in one chip and chip is arranged on the glass substrate by complementary metal oxide-semiconductor treatment technology (CMOS process).Therefore, the manufacturing cost of GOA framework is well below the COG framework.
Fig. 1 illustrates the circuit diagram into one-level offset buffer in the GOA framework, and Fig. 2 illustrates the frequency diagram into various signals in the offset buffer shown in Figure 1.Shown in Fig. 1-2, offset buffer is made of transistor M1, transistor M2, transistor M3 and transistor M4.When being in room temperature, starting impulse signal ST (Start Pulse) thus can send a pulse turn-on transistor M1 that node CP is promoted to high voltage level near starting impulse signal ST earlier.And when frequency signal CLK sends a pulse, because of being subjected to the influence of the capacitance coupling effect of transistor M2, the high voltage level of the starting impulse signal ST that node CP is stored can be further and the high voltage level of frequency signal CLK superposition mutually, thereby promote the current potential of node CP once more.Transistor M2 conducting exported node Out to and produced output signal Out (n) to drive relevant circuit with the high voltage level with frequency signal CLK this moment.When being in low temperature, transistor M2 conducting degree weakens, its magnitude of current can reduce, add the electric leakage situation of source voltage and size of components transistor M4 fixedly the time, then the current potential on the node Out can't draw high, cause output signal Out (n) can occur unusual and can't drive relevant circuit, and therefore cause the driving force of driving circuit not enough and the phenomenon of display abnormality occurs.
[summary of the invention]
One of purpose of the present invention is providing a kind of booster circuit exactly, and it can change its output potential linearly according to variation of temperature.
A further object of the present invention provides a kind of booster circuit with temperature adjustment output potential, and its display effect influence to flat-panel screens is less.
The present invention proposes a kind of booster circuit, comprises boost module, feedback circuit, reference potential generation module, first comparer and pulse width modulation module.Boost module comprises input end and output terminal, and its input end receives the input current potential, and output terminal provides output potential.Feedback circuit is electrically coupled to the output terminal of boost module so that corresponding feedback current potential to be provided according to output potential.The reference potential generation module is created in the specified temp interval reference potential along with temperature variation.First comparer has two input ends and an output terminal, and two input ends of first comparer receive feedback current potential and reference potential respectively, and the output terminal of first comparer provides first comparative result.The pulse width modulation module is electrically coupled to first comparer and boost module, the pulse width modulation module detect boost module output terminal electric current with the output current testing result, and control according to the output current testing result and first comparative result when the conducting boost module is through the electrical path of pulse width modulation module to ground.
In one embodiment of the invention, above-mentioned boost module comprises first inductance, the first unidirectional feed-through assembly and first electric capacity.First inductance has first end and second end, and first end of first inductance is electrically coupled to the input end of boost module.The first unidirectional feed-through assembly has first end and second end, wherein the first unidirectional feed-through assembly allowable current flows to second end of unidirectional feed-through assembly from first end of the first unidirectional feed-through assembly, and first end of the first unidirectional feed-through assembly is electrically coupled to second end of first inductance.First electric capacity has first end and second end, and wherein first end of first electric capacity is electrically coupled to second end of the first unidirectional feed-through assembly.
In one embodiment of the invention, above-mentioned reference potential generation module comprises many current potentials generation component, second comparer and current potential selection assembly.Many current potentials generation component provides first reference potential and second reference potential, and wherein second reference potential is greater than first reference potential.Two input ends of second comparer receive first reference potential and reference potential respectively, and its output terminal provides enable signal.Current potential selects assembly to comprise first resistance, second resistance, the resistance of warm electrification, first switch and second switch.First resistance has first end and second end, wherein the first end electric property coupling of first resistance at the most the current potential generation component to receive second reference potential.Second resistance has first end and second end, and wherein first end of second resistance is electrically coupled to ground.The resistance of temperature electrification has first end and second end, and first end of wherein warm electrification resistance is electrically coupled to ground.First switch is electrically coupled between first resistance and second resistance and is subjected to enable signal to control whether conducting.Second switch is electrically coupled between the resistance of first resistance and warm electrification and is subjected to enable signal to control whether conducting.Wherein, the resistance value of warm electrification resistance changes with temperature, and first switch and second switch are subjected to the control of enable signal and not conducting simultaneously, and the electric property coupling of first resistance and second switch point provides reference potential.
In one embodiment of the invention, the resistance value of above-mentioned warm electrification resistance descends with temperature and rises, and the resistance value that the resistance value of second resistance and warm electrification hinder is identical when specified temp.And when temperature during greater than specified temp, enable signal makes first switch conduction and makes not conducting of second switch.
In one embodiment of the invention, the second above-mentioned comparer makes enable signal conducting second switch during greater than first reference potential at reference potential, and makes enable signal conducting first switch during less than first reference potential at reference potential.
In one embodiment of the invention, above-mentioned boost module comprises first inductance, the first unidirectional feed-through assembly, first electric capacity, second inductance, the second unidirectional feed-through assembly and second electric capacity.First inductance has first end and second end.The first unidirectional feed-through assembly has first end and second end, the first unidirectional feed-through assembly allowable current flows to second end of the first unidirectional feed-through assembly from first end of the first unidirectional feed-through assembly, and first end of the first unidirectional feed-through assembly is electrically coupled to second end of first inductance.First electric capacity has first end and second end, and first end of first electric capacity is electrically coupled to second end of the first unidirectional feed-through assembly.Second inductance has first end and second end, and first end of second inductance is electrically coupled to input end.The second unidirectional feed-through assembly has first end and second end, the second unidirectional feed-through assembly allowable current flows to second end of the second unidirectional feed-through assembly from first end of the second unidirectional feed-through assembly, and first end of the second unidirectional feed-through assembly is electrically coupled to second end of second inductance.Second electric capacity has first end and second end, and first end of second electric capacity is electrically coupled to second end of the second unidirectional feed-through assembly and first end of first inductance.
In one embodiment of the invention, above-mentioned booster circuit more comprises prime feedback circuit, prime comparer and prime pulse width modulation module.The prime feedback circuit is electrically coupled to second end of the second unidirectional feed-through assembly to obtain corresponding prime feedback current potential.Two input ends of prime comparer receive prime feedback current potential and fixed reference potential respectively, and the output terminal of prime comparer output prime comparative result.Prime pulse width modulation module is electrically coupled to the prime feedback circuit to obtain prime feedback current potential, and prime pulse width modulation module detect provide to the electric current of the second unidirectional feed-through assembly with prime current detecting result, and control with the prime comparative result when conducting inductance capacitance boost module is through the electrical path of prime pulse width modulation module to ground according to prime current detecting result.
In one embodiment of the invention, above-mentioned reference potential generation module comprises many current potentials generation component, second comparer and current potential selection assembly.Many current potentials generation component provides first reference potential and second reference potential, and second reference potential is greater than first reference potential.Two input ends of second comparer receive first reference potential and reference potential respectively, and the output terminal of second comparer provides enable signal.Current potential selects assembly to comprise first resistance, second resistance, the resistance of warm electrification, first switch and second switch.First resistance has first end and second end, the first end electric property coupling of first resistance at the most the current potential generation component to receive second reference potential.Second resistance has first end and second end, and first end of second resistance is electrically coupled to ground.The resistance of temperature electrification has first end and second end, and first end of warm electrification resistance is electrically coupled to ground.First switch is electrically coupled between first resistance and second resistance and is subjected to enable signal to control whether conducting.Second switch is electrically coupled between the resistance of first resistance and warm electrification and is subjected to enable signal to control whether conducting.Wherein, the resistance value of warm electrification resistance changes with temperature, and first switch and second switch are subjected to the control of enable signal and not conducting simultaneously, and the electric property coupling of first resistance and second switch point provides reference potential.
The present invention also provides a kind of booster circuit with temperature adjustment output potential, and it comprises inductance capacitance boost module, feedback circuit and pulse width modulation module.The inductance capacitance boost module comprises input end and output terminal, and wherein input end receives the input current potential, and output terminal provides output potential.Feedback circuit is electrically coupled to output terminal so that corresponding feedback current potential to be provided according to output potential.When conducting inductance capacitance boost module is through the electrical path of pulse width modulation module to ground, so that output potential is linear change in the specified temp interval for the pulse width modulation module controls.
In one embodiment of the invention, above-mentioned booster circuit more comprises the reference potential generation module and first comparer.The reference potential generation module is created in and is the reference potential of linear change in the specified temp interval.Two input ends of first comparer receive feedback current potential and reference potential respectively, and the output terminal of first comparer provides first comparative result.Wherein, the pulse width modulation module controls according to the output current testing result and first comparative result when conducting inductance capacitance boost module is through the electrical path of pulse width modulation module to ground.
The booster circuit that the embodiment of the invention disclosed can draw high its output potential once more when being in low temperature environment, thereby improve the driving force of flat-panel screens driving circuit, and it is little by little to draw high its output potential according to variation of temperature, therefore can not influence the display effect of flat-panel screens.
For above and other objects of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below.
[description of drawings]
Fig. 1 illustrates the circuit diagram into offset buffer in the GOA framework.
Fig. 2 illustrates the frequency diagram into various signals in the offset buffer shown in Figure 1.
Fig. 3 illustrates the synoptic diagram of the booster circuit that discloses for one embodiment of the invention.
Fig. 4 A illustrates the synoptic diagram that concerns into reference potential and temperature resistance.
Fig. 4 B illustrates the synoptic diagram that concerns into output potential and temperature.
[primary clustering symbol description]
M1～M4,154,184: transistor
ST: starting impulse signal
CLK: frequency signal
CP, OUT: node
Out (n): output signal
10,100: booster circuit
11: charge pump
110: boost module
111,114: inductance
112,115: diode
113,116: electric capacity
120: feedback circuit
130: the reference potential generation module
131: many current potentials generation component
132,140,152,182: comparer
133: current potential is selected assembly
1331,1332: the activation switch
150: the pulse width modulation module
151: current detector
153,183: control circuit
160: the prime feedback circuit
170: the prime comparer
180: prime pulse width modulation module
181: current detector
R1
R4, RT1
RT3: resistance
VIN: input current potential
AVDD: the input current potential is pulled up to certain current potential
VGH: output potential
VFB1: prime feedback current potential
VFB2: feedback current potential
VREF: reference potential
VREF1: first reference potential
VREF2: second reference potential
VGH1: first output potential
VGH2: second output potential
[embodiment]
See also Fig. 3, it illustrates the synoptic diagram of the booster circuit that discloses for one embodiment of the invention.As shown in Figure 3, booster circuit 100 comprises boost module 110, feedback circuit 120, reference potential generation module 130, comparer 140, pulse width modulation module 150, prime feedback circuit 160, prime comparer 170 and prime pulse width modulation module 180.
In the present embodiment, the circuit formed of the part of boost module 110, prime feedback circuit 160, prime comparer 170 and prime pulse width modulation module 180 is pulled up to certain current potential AVDD in order to will import current potential VIN.And the input current potential that the circuit that another part of boost module 110, feedback circuit 120, reference potential generation module 130, comparer 140 and pulse width modulation module 150 are formed will draw high in order to the variation of foundation environment temperature is pulled up to corresponding output potential VGH once more.
In fact, also can omit the preceding circuit of inductance 114 and make input current potential VIN directly be supplied to inductance 114, the circuit of being formed by boost module 110 (only comprising inductance 114, unidirectional feed-through assembly (being diode among this embodiment) 115 and electric capacity 116 this moment), feedback circuit 120, reference potential generation module 130, comparer 140 and pulse width modulation module 150 carries out current potential and draws high again.So the practice equally also can reach the purpose that changes output potential VGH size according to the variation of environment temperature.Certainly, if will directly be promoted to output potential VGH from input current potential VIN, then the specifications design of its circuit unit can be different with embodiment shown in Figure 3.
Please continue with reference to Fig. 3.Particularly, boost module 110 comprises inductance 111, diode 112, electric capacity 113, inductance 114, diode 115 and electric capacity 116.One end of inductance 111 is imported current potential VIN as the input end of boost module 110 to receive, and its other end is electrically coupled to the anode of diode 112, an end of the negative terminal electric property coupling electric capacity 113 of diode 112, and the other end ground connection of electric capacity 113.The negative terminal of one end electric property coupling diode 112 of inductance 114 and the electric property coupling place of electric capacity 113, and the anode of the other end electric property coupling diode 115 of inductance 114, an end of the negative terminal electric property coupling electric capacity 116 of diode 115, and the other end ground connection of electric capacity 116.And the electric property coupling place of the negative terminal of diode 115 and electric capacity 116 as the output terminal of boost module 110 so that output potential VGH to be provided.In addition, diode 112 and diode 115 are as unidirectional feed-through assembly, and its allowable current flows to its negative terminal from the anode of diode.
The negative input end electric property coupling resistance R 1 of prime comparer 170 is sentenced with the electric property coupling of resistance R 2 and is received the prime feedback current potential VFB1 that prime feedback circuit 160 is provided, its positive input terminal electric property coupling one fixed reference potential.In the present embodiment, fixed reference potential is the first reference potential VREF1.In addition, the output terminal of prime comparer 170 is in order to output prime comparative result.
Prime pulse width modulation module 180 is electrically coupled to the output terminal of prime comparer 170 to obtain the prime comparative result, and prime pulse width modulation module 180 also is electrically coupled to the electric property coupling place of inductance in the boost module 110 111 and diode 112, thereby detects the electric current that provides to diode 112 to obtain prime current detecting result.Prime pulse width modulation module 180 can control when conducting boost module 110 is through the electrical path of prime pulse width modulation module to ground according to prime current detecting result and prime comparative result that it obtained.
Particularly, prime pulse width modulation module 180 comprises current detector 181, comparer 182, control circuit 183 and transistor 184.Current detector 181 is electrically coupled to the electric property coupling place of inductance in the boost module 110 111 and diode 112, thereby detects the electric current that provides to diode 112 to produce corresponding prime current detecting result.The positive input terminal of comparer 183 is electrically coupled to current detector 181 with acquisition prime current detecting result, and negative input end is electrically coupled to the output terminal of prime comparer 170 with acquisition prime comparative result, and its output terminal electric property coupling is with control circuit 183.The grid of transistor 184 is electrically coupled to control circuit 183, and its source electrode is electrically coupled to the electric property coupling place of inductance in the boost module 110 111 and diode 112, and its drain ground connection.Control circuit 183 produces corresponding control signal according to the output result of comparer 182, thus whether conducting of oxide-semiconductor control transistors 184, promptly boost module 110 through prime pulse width modules 180 to the whether conducting of the electrical path on ground.
The circuit that the inductance 111 of boost module 110, diode 112 and electric capacity 113, prime feedback circuit 160, prime comparer 170 and prime pulse width modulation module 180 are formed can draw high input current potential VIN to a certain extent.
Reference potential generation module 130 is in order to be created in the reference potential VREF that changes along with temperature in the specified temp interval.Particularly, reference potential generation module 130 comprises many current potentials generation component 131, comparer 132 and current potential selection assembly 133.Many current potentials generation component 131 is in order to providing the first reference potential VREF1 and the second reference potential VREF2, and the second reference potential VREF2 is greater than the first reference potential VREF1.The negative input end of comparer 132 receives the first reference potential VREF1, and its positive input terminal receives reference potential VREF, and its output terminal then provides enable signal EN according to the first reference potential VREF1 and reference potential VREF.
Current potential is selected 133 reference potential VREF that determine 130 outputs of reference potential generation module according to enable signal of assembly.Current potential selects assembly 133 to comprise resistance R T1, temperature resistance RT2, resistance R T3, switch 1331 and switch 1332.Resistance R T1, switch 1331 and temperature resistance RT2 are cascaded successively, and are electrically coupled between the second reference potential VREF2 and the ground.Switch 1331 is subjected to enable signal EN to control its whether conducting.Resistance R T1, switch 1332 and resistance R T3 are cascaded successively, and are electrically coupled between the second reference potential VREF2 and the ground.Switch 1332 is subjected to the designature EN of enable signal EN to control its whether conducting.Electric property coupling place between resistance R T1 and temperature resistance RT2 and the resistance R T3 as the output terminal of reference current potential generation module 130 with output reference potential VREF.
In addition, in the present embodiment, the resistance value of temperature resistance RT2 descends with temperature and rises, and the resistance value of the resistance value of resistance R T3 and temperature resistance RT2 is identical when a certain specified temp (for example room temperature is 25 degrees centigrade).When temperature during greater than specified temp, enable signal EN is in the disabled state, and its designature EN is in enabled status, then switch 1331 not conductings and switch 1332 conductings, resistance R T1, switch 1332 circuit turn-on of being connected then with resistance R T3, the reference potential VREF of this moment determined with the circuit that resistance R T3 is connected by resistance R T1, the switch 1332 of conducting, then reference potential VREF=VREF2XRT3/ (RT 1+RT3).Because the resistance value of resistance R T1 and resistance R T3 is fixed, therefore the reference potential VREF of this moment can not change.In the present embodiment, the first reference potential VREF1 can be set at the reference potential VREF that equals this moment.That is to say that when temperature during greater than specified temp, the reference potential VREF that current potential selects assembly 133 to be exported is exactly the first reference potential VREF1.
When temperature during less than specified temp, enable signal EN is in enabled status, and its designature EN is in the disabled state, then switch 1331 conductings and switch 1332 is non-conduction.Therefore resistance R T1, switch 1331 circuit turn-on of being connected with temperature resistance RT2, the reference potential VREF of this moment determined with the circuit that temperature resistance RT2 is connected by resistance R T1, the switch 1331 of conducting, then reference potential VREF=VREF2XRT2/ (RT1+RT2)=VREF2/ (1+RT1/RT2).Because the resistance value of temperature resistance RT2 rises with decrease of temperature, so reference potential VREF can produce linear change along with the variation of the resistance value of temperature resistance RT2.In addition, because temperature is lower than specified temp, so the resistance value of temperature resistance RT2 is greater than the resistance value of resistance R T3, then reference potential VREF greater than the first reference potential VREF1 until reaching the second reference potential VREF2.In the present embodiment, when but design temperature reached 0 degree centigrade, reference potential VREF reached the second reference potential VREF2, and temperature is when being lower than 0 degree centigrade, reference potential VREF keeps the second reference potential VREF2 constant always, avoids corresponding output potential VGH constantly soaring by this.
The output terminal of the negative input end electric property coupling feedback circuit 120 of comparer 140 is to receive feedback current potential VFB2, the output terminal of its positive input terminal electric property coupling reference potential generation module 130 is with reception reference potential VREF, and its output terminal provides corresponding comparative result according to feedback current potential VFB2 and reference potential VREF.
Pulse width modulation module 150 is similar to prime pulse width modulation module 180, and it comprises current detector 151, comparer 152, control circuit 153 and transistor 154.Current detector 151 is electrically coupled to the electric property coupling place of inductance in the boost module 110 114 and diode 115, thereby detects the electric current that provides to diode 115 to produce corresponding current detecting result.The positive input terminal of comparer 153 is electrically coupled to current detector 151 with acquisition current detecting result, and negative input end is electrically coupled to the output terminal of comparer 130 with the acquisition comparative result, and its output terminal electric property coupling is with control circuit 153.The grid of transistor 154 is electrically coupled to control circuit 153, and its source electrode is electrically coupled to the electric property coupling place of inductance in the boost module 110 114 and diode 115, and its drain ground connection.Control circuit 153 produces corresponding control signal according to the output result of comparer 152, thereby whether conducting of oxide-semiconductor control transistors 154, be boost module 110 through pulse width modules 150 to the whether conducting of the electrical path on ground, thus the output potential VGH of decision boost module 110.According to equivalent electrical circuit, the output potential VGH=VREF (1+R3/R4) of boost module 110.
See also Fig. 4 A and Fig. 4 B, wherein Fig. 4 A illustrates the synoptic diagram that concerns into reference potential VREF and temperature resistance RT2, and Fig. 4 B illustrates the synoptic diagram that concerns into output potential VGH and temperature.Shown in Fig. 4 A and 4B, when temperature during greater than specified temp (25 degrees centigrade of room temperatures), no matter be according to resistance R T1, switch 1331 and the circuit of temperature resistance RT2 series connection or the circuit of being connected with resistance R T3 according to resistance R T1, switch 1332, reference potential VREF can be greater than the first reference potential VREF1, therefore the enable signal EN that exports according to the first reference potential VREF1 and reference potential VREF of comparer 132 is a disabled, and its designature
ENBe activation, then switch 1331 not conductings and switch 1332 conductings, reference potential VREF can be according to the RT1 of conducting, circuit that switch 1332 is connected with resistance R T3 and is fixed on the first reference potential VREF1.At this moment, output potential VGH=VREF (1+R3/R4)=VREF1 (1+R3/R4).That is to say that when booster circuit 100 is operated in non-low-temperature condition following time, the output potential VGH of booster circuit 100 is fixed on the first output potential VGH1 corresponding to the first reference potential VREF1.
When temperature is lower than specified temp, this moment, the resistance value of temperature resistance RT2 rose, and then reference potential VREF is owing to the rising of the resistance value of temperature resistance RT2 increases, thereby greater than the first reference potential VREF1, the then comparer 132 enable signal EN activation of being exported, its designature
ENDisabled.Switch 1331 conductings and switch 1332 not conductings, reference potential VREF can be according to the RT1 of conducting, circuit that switch 1331 is connected with temperature resistance RT2 and is determined, and reference potential VREF can be along with the variation of the resistance value of temperature resistance RT2 and linear change reaches the second reference potential VREF2 until reference potential VREF.Therefore, when booster circuit 100 is operated in low-temperature condition, output potential VGH=VREF (1+R3/R4) the meeting foundation of booster circuit 100 is the linear change according to the linear change of reference potential VREF also, until the second output potential VGH2=VREF2 (1+R3/R4) that reaches corresponding to the second reference potential VREF2.That is to say that when booster circuit 100 was operated in low-temperature condition, its output potential VGH can obtain drawing high once more, and it is to carry out linear variation according to variation of temperature in the set temperature range of reserving.
In sum, the booster circuit that the embodiment of the invention disclosed can draw high its output potential once more when being in low temperature environment, thereby improve the driving force of flat-panel screens driving circuit, and it is little by little to draw high its output potential according to variation of temperature, therefore can not influence the display effect of flat-panel screens.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; anyly have the knack of this skill person; without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking accompanying the claim person of defining.
Claims (10)
1. booster circuit comprises:
One boost module comprises an input end and an output terminal, and this input end receives an input current potential, and this output terminal provides an output potential;
One feedback circuit is electrically coupled to this output terminal so that a corresponding feedback current potential to be provided according to this output potential;
One reference potential generation module is created in the specified temp interval reference potential along with temperature variation;
One first comparer has two input ends and an output terminal, and two input ends of this first comparer receive this feedback current potential and this reference potential respectively, and the output terminal of this first comparer provides one first comparative result; And
One pulse width modulation module, be electrically coupled to this first comparer and this boost module, this pulse width modulation module detect this boost module this output terminal electric current with an output current testing result, and control according to this output current testing result and this first comparative result when this boost module of conducting is through the electrical path of this pulse width modulation module to ground.
2. booster circuit according to claim 1 is characterized in that, this boost module comprises:
One first inductance has first end and second end, and first end of this first inductance is electrically coupled to this input end;
One first unidirectional feed-through assembly, have first end and second end, this first unidirectional feed-through assembly allowable current flows to second end of this unidirectional feed-through assembly from first end of this first unidirectional feed-through assembly, and first end of this first unidirectional feed-through assembly is electrically coupled to second end of this first inductance; And
One first electric capacity has first end and second end, and first end of this first electric capacity is electrically coupled to second end of this first unidirectional feed-through assembly.
3. booster circuit according to claim 1 is characterized in that, this reference potential generation module comprises:
The generation component of current potential more than provides one first reference potential and one second reference potential, and this second reference potential is greater than this first reference potential;
One second comparer has two input ends and an output terminal, and two input ends of this second comparer receive this first reference potential and this reference potential respectively, and the output terminal of this second comparer provides an activation signal; And
One current potential is selected assembly, comprising:
One first resistance has first end and second end, and first end of this first resistance is electrically coupled to this many current potentials generation component to receive this second reference potential;
One second resistance has first end and second end, and first end of this second resistance is electrically coupled to ground;
One warm electrification resistance has first end and second end, and first end of this temperature electrification resistance is electrically coupled to ground;
One first switch is electrically coupled between this first resistance and this second resistance and is subjected to this enable signal to control whether conducting; And
One second switch is electrically coupled between the resistance of this first resistance and this temperature electrification and is subjected to this enable signal to control whether conducting,
Wherein, the resistance value of this temperature electrification resistance changes with temperature, and this first switch and this second switch are subjected to the control of this enable signal and not conducting simultaneously, and the electric property coupling point of this first resistance and this first switch provides this reference potential.
4. booster circuit according to claim 3, it is characterized in that, the resistance value of this temperature electrification resistance descends with temperature and rises, the resistance value of the resistance value of this second resistance and the resistance of this temperature electrification is identical when a specified temp, and when temperature during greater than this specified temp, this enable signal makes this first switch conduction and makes this not conducting of second switch.
5. booster circuit according to claim 3, it is characterized in that, this second comparer makes this this second switch of enable signal conducting during greater than this first reference potential at this reference potential, and makes this first switch of this enable signal conducting during less than this first reference potential at this reference potential.
6. booster circuit according to claim 1 is characterized in that, this boost module comprises:
One first inductance has first end and second end;
One first unidirectional feed-through assembly, have first end and second end, this first unidirectional feed-through assembly allowable current flows to second end of this first unidirectional feed-through assembly from first end of this first unidirectional feed-through assembly, and first end of this first unidirectional feed-through assembly is electrically coupled to second end of this first inductance;
One first electric capacity has first end and second end, and first end of this first electric capacity is electrically coupled to second end of this first unidirectional feed-through assembly;
One second inductance has first end and second end, and first end of this second inductance is electrically coupled to this input end;
One second unidirectional feed-through assembly, have first end and second end, this second unidirectional feed-through assembly allowable current flows to second end of this second unidirectional feed-through assembly from first end of this second unidirectional feed-through assembly, and first end of this second unidirectional feed-through assembly is electrically coupled to second end of this second inductance; And
One second electric capacity has first end and second end, and first end of this second electric capacity is electrically coupled to second end of this second unidirectional feed-through assembly and first end of this first inductance.
7. booster circuit according to claim 6 is characterized in that, more comprises:
One prime feedback circuit, second end that is electrically coupled to this second unidirectional feed-through assembly is to obtain corresponding prime feedback current potential;
One prime comparer has two input ends and an output terminal, and two input ends of this prime comparer receive this a prime feedback current potential and fixed reference potential respectively, and the output terminal of this prime comparer is exported a prime comparative result; And
One prime pulse width modulation module, be electrically coupled to this prime feedback circuit to obtain this prime feedback current potential, this prime pulse width modulation module detect provide to the electric current of this second unidirectional feed-through assembly with a prime current detecting result, and control with this prime comparative result when this inductance capacitance boost module of conducting is through the electrical path of this prime pulse width modulation module to ground according to this prime current detecting result.
8. booster circuit according to claim 7 is characterized in that, this reference potential generation module comprises:
The generation component of current potential more than provides one first reference potential and one second reference potential, and this second reference potential is greater than this first reference potential;
One second comparer has two input ends and an output terminal, and two input ends of this second comparer receive this first reference potential and this reference potential respectively, and the output terminal of this second comparer provides an activation signal; And
One current potential is selected assembly, comprising:
One first resistance has first end and second end, and first end of this first resistance is electrically coupled to this many current potentials generation component to receive this second reference potential;
One second resistance has first end and second end, and first end of this second resistance is electrically coupled to ground;
One warm electrification resistance has first end and second end, and first end of this temperature electrification resistance is electrically coupled to ground;
One first switch is electrically coupled between this first resistance and this second resistance and is subjected to this enable signal to control whether conducting; And
One second switch is electrically coupled between the resistance of this first resistance and this temperature electrification and is subjected to this enable signal to control whether conducting,
Wherein, the resistance value of this temperature electrification resistance changes with temperature, and this first switch and this second switch are subjected to the control of this enable signal and not conducting simultaneously, and the electric property coupling point of this first resistance and this first switch provides this reference potential.
9. adjust the booster circuit of output potential with temperature for one kind, comprising:
One inductance capacitance boost module comprises an input end and an output terminal, and this input end receives an input current potential, and this output terminal provides an output potential;
One feedback circuit is electrically coupled to this output terminal so that a corresponding feedback current potential to be provided according to this output potential; And
One pulse width modulation module controls when this inductance capacitance boost module of conducting is through the electrical path of this pulse width modulation module to ground, so that this output potential is a linear change in a specified temp interval.
10. booster circuit according to claim 9 is characterized in that, more comprises:
One reference potential generation module is created in and is a reference potential of linear change in this specified temp interval; And
One first comparer has two input ends and an output terminal, and two input ends of this first comparer receive this feedback current potential and this reference potential respectively, and the output terminal of this first comparer provides one first comparative result,
Wherein, this pulse width modulation module controls according to this output current testing result and this first comparative result when this inductance capacitance boost module of conducting is through the electrical path of this pulse width modulation module to ground.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW99146673A TWI441453B (en) | 2010-12-29 | 2010-12-29 | Boost circuit |
| TW099146673 | 2010-12-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102184702A true CN102184702A (en) | 2011-09-14 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011101112142A Pending CN102184702A (en) | 2010-12-29 | 2011-04-19 | Voltage booster circuit |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102184702A (en) |
| TW (1) | TWI441453B (en) |
Cited By (2)
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| CN102647170A (en) * | 2011-12-30 | 2012-08-22 | 友达光电股份有限公司 | Grid high voltage generator and display module |
| CN112331248A (en) * | 2019-08-05 | 2021-02-05 | 上海复旦微电子集团股份有限公司 | Charge pump circuit for establishing NOR memory read voltage and NOR memory |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI482141B (en) * | 2013-01-18 | 2015-04-21 | Power Forest Technology | Driving circuit with an over voltage protection device for modulating an electrical parameter of a device |
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Also Published As
| Publication number | Publication date |
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| TWI441453B (en) | 2014-06-11 |
| TW201228238A (en) | 2012-07-01 |
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Application publication date: 20110914 |