CN102184702A - Voltage booster circuit - Google Patents

Abstract

A boost circuit comprises a boost module, a feedback circuit and a pulse width modulation module. The boost module comprises an input end and an output end, wherein the input end receives an input potential, and the output end provides an output potential. The feedback circuit is electrically coupled to the output end to provide a corresponding feedback potential according to the output potential. The pulse width modulation module controls when to conduct an electric path from the boosting module to the ground through the pulse width modulation module, so that the output potential is linearly changed within a specific temperature interval.

Description

boost circuit

【Technical field】

The present invention relates to a voltage boosting circuit for driving a display panel, and in particular to a voltage boosting circuit for driving a display panel that adjusts output potential with temperature changes.

【Background technique】

In order to reduce the product cost, the drive circuit of the flat panel display has gradually replaced the original chip-on-glass package (Chip-On-Glass, COG) drive technology with the gate-on-array technology (Gate-On-Array, GOA), which can save The amount of gate driver IC (Gate IC) used. Both the GOA architecture and the COG architecture require the use of shift registers and level shifters. However, the GOA architecture uses thin-film transistor n-type metal-oxygen-semiconductor processing technology (TFT n-MOSprocess) to synthesize a shift register, and the potentiometer is fabricated on a glass substrate. The COG architecture integrates the shift register and the level shifter into a single chip through complementary metal-oxygen-semiconductor processing technology (CMOS process), and the chip is placed on a glass substrate. Therefore, the manufacturing cost of the GOA architecture is much lower than that of the COG architecture.

FIG. 1 is a schematic circuit diagram of a first-level shift register in the GOA architecture, and FIG. 2 is a schematic diagram of frequencies of various signals in the shift register shown in FIG. 1 . As shown in FIG. 1-2, the shift register is composed of a transistor M1, a transistor M2, a transistor M3, and a transistor M4. When it is at room temperature, the start pulse signal ST (Start Pulse) will first send a pulse to turn on the transistor M1 so as to raise the node CP to a high voltage level close to the start pulse signal ST. When the frequency signal CLK sends out a pulse, due to the influence of the capacitive coupling effect of the transistor M2, the high voltage level of the start pulse signal ST stored in the node CP will be further superimposed on the high voltage level of the frequency signal CLK, Thereby, the potential of the node CP is raised again. At this time, the transistor M2 is turned on to output the high voltage level of the clock signal CLK to the node Out to generate an output signal Out(n) to drive related circuits. When the temperature is low, the conduction degree of transistor M2 is weakened, and its current flow will be reduced. In addition, when the source voltage and component size are fixed, the leakage of transistor M4, the potential on the node Out cannot be pulled up, resulting in the output signal Out( n) Abnormalities may occur and related circuits cannot be driven, and thus the driving capability of the driving circuit is insufficient, resulting in abnormal display.

【Content of invention】

One object of the present invention is to provide a boost circuit that can linearly change its output potential according to temperature changes.

Another object of the present invention is to provide a boost circuit that adjusts the output potential with temperature, which has little influence on the display effect of the flat panel display.

The present invention provides a boost circuit, which includes a boost module, a feedback circuit, a reference potential generation module, a first comparator and a pulse width modulation module. The boost module includes an input terminal and an output terminal, the input terminal receives the input potential, and the output terminal provides the output potential. The feedback circuit is electrically coupled to the output terminal of the boost module to provide a corresponding feedback potential according to the output potential. The reference potential generation module generates a reference potential that varies with temperature within a specific temperature range. The first comparator has two input terminals and an output terminal. The two input terminals of the first comparator respectively receive the feedback potential and the reference potential, and the output terminal of the first comparator provides a first comparison result. The pulse width modulation module is electrically coupled to the first comparator and the boost module. The pulse width modulation module detects the current at the output terminal of the boost module to obtain an output current detection result, and compares the output current detection result with the first comparison result. To control when to turn on the electrical path from the boost module to the ground through the pulse width modulation module.

In an embodiment of the present invention, the above boost module includes a first inductor, a first unidirectional conduction component, and a first capacitor. The first inductor has a first end and a second end, and the first end of the first inductor is electrically coupled to the input end of the boost module. The first unidirectional conduction component has a first end and a second end, wherein the first unidirectional conduction component allows current to flow from the first end of the first unidirectional conduction component to the second end of the unidirectional conduction component, and the first unidirectional conduction component The first end of the conduction component is electrically coupled to the second end of the first inductor. The first capacitor has a first end and a second end, wherein the first end of the first capacitor is electrically coupled to the second end of the first one-way conducting element.

In one embodiment of the present invention, the above-mentioned reference potential generating module includes a multi-potential generating component, a second comparator, and a potential selecting component. The multi-potential generating component provides a first reference potential and a second reference potential, wherein the second reference potential is greater than the first reference potential. The two input terminals of the second comparator respectively receive the first reference potential and the reference potential, and the output terminal of the second comparator provides an enabling signal. The potential selection component includes a first resistor, a second resistor, a temperature sensing resistor, a first switch and a second switch. The first resistor has a first end and a second end, wherein the first end of the first resistor is electrically coupled to the multi-potential generating component for receiving the second reference potential. The second resistor has a first end and a second end, wherein the first end of the second resistor is electrically coupled to the ground. The temperature sensing resistor has a first end and a second end, wherein the first end of the temperature sensing resistor is electrically coupled to the ground. The first switch is electrically coupled between the first resistor and the second resistor and is controlled by the enabling signal to be turned on or not. The second switch is electrically coupled between the first resistor and the temperature-sensing resistor, and is controlled by the enable signal to be turned on or not. Wherein, the resistance value of the temperature-sensing resistor changes with temperature, the first switch and the second switch are controlled by the enabling signal and are not turned on at the same time, and the electrical coupling point of the first resistor and the second switch provides a reference potential.

In an embodiment of the present invention, the resistance value of the above-mentioned temperature-sensing resistor increases as the temperature drops, and the resistance value of the second resistor is the same as the resistance value of the temperature-sensing resistor at a specific temperature. And when the temperature is greater than a specific temperature, the enabling signal turns on the first switch and turns off the second switch.

In one embodiment of the present invention, the above-mentioned second comparator enables the enable signal to turn on the second switch when the reference potential is greater than the first reference potential, and turns on the enable signal when the reference potential is lower than the first reference potential first switch.

In one embodiment of the present invention, the above boost module includes a first inductor, a first unidirectional conduction component, a first capacitor, a second inductor, a second unidirectional conduction component and a second capacitor. The first inductor has a first end and a second end. The first unidirectional conduction component has a first end and a second end, the first unidirectional conduction component allows current to flow from the first end of the first unidirectional conduction component to the second end of the first unidirectional conduction component, the first unidirectional conduction component The first end of the conduction component is electrically coupled to the second end of the first inductor. The first capacitor has a first end and a second end, and the first end of the first capacitor is electrically coupled to the second end of the first one-way conducting element. The second inductor has a first end and a second end, and the first end of the second inductor is electrically coupled to the input end. The second unidirectional conduction component has a first end and a second end, the second unidirectional conduction component allows current to flow from the first end of the second unidirectional conduction component to the second end of the second unidirectional conduction component, and the second unidirectional conduction component The first end of the conduction component is electrically coupled to the second end of the second inductor. The second capacitor has a first end and a second end, and the first end of the second capacitor is electrically coupled to the second end of the second unidirectional conducting element and the first end of the first inductor.

In an embodiment of the present invention, the above boost circuit further includes a front-stage feedback circuit, a front-stage comparator, and a front-stage pulse width modulation module. The pre-stage feedback circuit is electrically coupled to the second end of the second unidirectional conduction element to obtain a corresponding pre-stage feedback potential. The two input terminals of the pre-stage comparator respectively receive the pre-stage feedback potential and the fixed reference potential, and the output terminal of the pre-stage comparator outputs the pre-stage comparison result. The pre-stage pulse width modulation module is electrically coupled to the pre-stage feedback circuit to obtain the pre-stage feedback potential, and the pre-stage pulse width modulation module detects the current provided to the second unidirectional conduction element to obtain the pre-stage current detection result, And according to the current detection result of the previous stage and the comparison result of the previous stage, it is controlled when to turn on the electrical path from the inductor-capacitor boost module to the ground via the previous-stage pulse width modulation module.

In one embodiment of the present invention, the above-mentioned reference potential generating module includes a multi-potential generating component, a second comparator, and a potential selecting component. The multi-potential generating component provides a first reference potential and a second reference potential, and the second reference potential is greater than the first reference potential. The two input terminals of the second comparator respectively receive the first reference potential and the reference potential, and the output terminal of the second comparator provides an enabling signal. The potential selection component includes a first resistor, a second resistor, a temperature sensing resistor, a first switch and a second switch. The first resistor has a first end and a second end, and the first end of the first resistor is electrically coupled to the multi-potential generating component for receiving the second reference potential. The second resistor has a first end and a second end, and the first end of the second resistor is electrically coupled to the ground. The temperature sensing resistor has a first end and a second end, and the first end of the temperature sensing resistor is electrically coupled to the ground. The first switch is electrically coupled between the first resistor and the second resistor and is controlled by the enabling signal to be turned on or not. The second switch is electrically coupled between the first resistor and the temperature-sensing resistor, and is controlled by the enable signal to be turned on or not. Wherein, the resistance value of the temperature-sensing resistor changes with temperature, the first switch and the second switch are controlled by the enabling signal and are not turned on at the same time, and the electrical coupling point of the first resistor and the second switch provides a reference potential.

The present invention also provides a voltage boosting circuit for adjusting output potential with temperature, which includes an inductance capacitor voltage boosting module, a feedback circuit and a pulse width modulation module. The LC step-up module includes an input terminal and an output terminal, wherein the input terminal receives the input potential, and the output terminal provides the output potential. The feedback circuit is electrically coupled to the output terminal to provide a corresponding feedback potential according to the output potential. The pulse width modulation module controls when to turn on the electrical path from the LC boost module to the ground through the pulse width modulation module, so that the output potential changes linearly within a specific temperature range.

In an embodiment of the present invention, the above boost circuit further includes a reference potential generating module and a first comparator. The reference potential generating module generates a reference potential that changes linearly within a specific temperature range. The two input terminals of the first comparator respectively receive the feedback potential and the reference potential, and the output terminal of the first comparator provides a first comparison result. Wherein, the pulse width modulation module controls when to turn on the electrical path from the LC boost module through the pulse width modulation module to the ground according to the output current detection result and the first comparison result.

The boost circuit disclosed in the embodiment of the present invention will increase its output potential again when it is in a low temperature environment, thereby improving the driving capability of the flat panel display driving circuit, and it gradually increases its output potential according to the change of temperature, so It will not affect the display effect of flat-panel monitors.

In order to make the above and other objects, features and advantages of the present invention more comprehensible, preferred embodiments will be described in detail below together with the accompanying drawings.

【Description of drawings】

FIG. 1 is a schematic circuit diagram of a shift register in a GOA architecture.

FIG. 2 is a schematic diagram of frequencies of various signals in the shift register shown in FIG. 1 .

FIG. 3 is a schematic diagram of a boost circuit disclosed by an embodiment of the present invention.

FIG. 4A is a schematic diagram showing the relationship between the reference potential and the temperature control resistance.

FIG. 4B is a schematic diagram showing the relationship between output potential and temperature.

[Description of main component symbols]

M1～M4, 154, 184: transistors

ST: start pulse signal

CLK: frequency signal

CP, OUT: Node

Out(n): output signal

10, 100: boost circuit

11: Charge pump

110: Boost module

111, 114: Inductance

112, 115: Diodes

113, 116: capacitance

120: Feedback circuit

130: Reference potential generation module

131: Multi-potential generation components

132, 140, 152, 182: Comparators

133: Potential selection component

1331, 1332: enable switch

150: Pulse width modulation module

151: Current detector

153, 183: control circuit

160: Pre-stage feedback circuit

170: Pre-stage comparator

180: Pre-stage pulse width modulation module

181: Current detector

R4、RT1

RT3：电阻R1

R4, RT1

RT3: resistance

VIN: input potential

AVDD: The input potential is pulled up to a certain potential

VGH: output potential

VFB1: Front stage feedback potential

VFB2: feedback potential

VREF: reference potential

VREF1: first reference potential

VREF2: Second reference potential

VGH1: the first output potential

VGH2: second output potential

【Detailed ways】

Please refer to FIG. 3 , which is a schematic diagram of a boost circuit disclosed by an embodiment of the present invention. As shown in FIG. 3 , the boost circuit 100 includes a boost module 110, a feedback circuit 120, a reference potential generation module 130, a comparator 140, a pulse width modulation module 150, a front-stage feedback circuit 160, a front-stage comparator 170 and a front-stage stage pulse width modulation module 180.

In this embodiment, a circuit composed of a part of the boost module 110, the front-stage feedback circuit 160, the front-stage comparator 170, and the front-stage pulse width modulation module 180 is used to pull the input potential VIN up to a certain potential AVDD . The other part of the boost module 110, the feedback circuit 120, the reference potential generation module 130, the comparator 140, and the pulse width modulation module 150 are used to pull the boosted input potential again according to the change of the ambient temperature. Rise to the corresponding output potential VGH.

In fact, the circuit before the inductor 114 can also be omitted so that the input potential VIN is directly supplied to the inductor 114, and then passes through the boost module 110 (this time only includes the inductor 114 and the unidirectional conductive component (a diode in this embodiment) 115 and capacitor 116 ), the feedback circuit 120 , the reference potential generation module 130 , the comparator 140 and the pulse width modulation module 150 to pull up the potential. Such an approach can also achieve the purpose of changing the magnitude of the output potential VGH according to the change of the ambient temperature. Of course, if the input potential VIN is to be raised directly to the output potential VGH, the specification design of its circuit components will be different from the embodiment shown in FIG. 3 .

Please continue to refer to Figure 3. Specifically, the boost module 110 includes an inductor 111 , a diode 112 , a capacitor 113 , an inductor 114 , a diode 115 and a capacitor 116 . One end of the inductor 111 is used as the input end of the boost module 110 to receive the input potential VIN, the other end is electrically coupled to the positive end of the diode 112, the negative end of the diode 112 is electrically coupled to one end of the capacitor 113, and the capacitor 113 The other end is grounded. One end of the inductor 114 is electrically coupled to the electrical coupling between the negative end of the diode 112 and the capacitor 113 , and the other end of the inductor 114 is electrically coupled to the positive end of the diode 115 , and the negative end of the diode 115 is electrically coupled to the capacitor 116 One end of the capacitor 116, and the other end of the capacitor 116 is grounded. And the electrical coupling between the negative terminal of the diode 115 and the capacitor 116 is used as the output terminal of the boost module 110 to provide the output potential VGH. In addition, the diode 112 and the diode 115 act as one-way conducting components, which only allow current to flow from the positive end of the diode to the negative end thereof.

The pre-stage feedback circuit 160 includes a resistor R1 and a resistor R2, wherein the resistor R1 and the resistor R2 are connected in series between the negative terminal of the diode 112 and the electrical coupling of the capacitor 113 and the ground. The electrical coupling between the resistor R1 and the resistor R2 is used as the output end of the pre-stage feedback circuit 160 to provide the pre-stage feedback potential VFB1 .

The negative input terminal of the pre-stage comparator 170 is electrically coupled to the electrical coupling between the resistors R1 and R2 to receive the pre-stage feedback potential VFB1 provided by the pre-stage feedback circuit 160, and its positive input terminal is electrically coupled to a fixed reference potential. In this embodiment, the fixed reference potential is the first reference potential VREF1. In addition, the output end of the previous stage comparator 170 is used to output the previous stage comparison result.

The pre-stage pulse width modulation module 180 is electrically coupled to the output terminal of the pre-stage comparator 170 to obtain the pre-stage comparison result, and the pre-stage pulse width modulation module 180 is also electrically coupled to the inductor 111 in the boost module 110 It is electrically coupled with the diode 112 so as to detect the current provided to the diode 112 to obtain the previous stage current detection result. The pre-stage PWM module 180 can control when to turn on the electrical path from the boost module 110 to the ground through the pre-stage PWM module according to the obtained pre-stage current detection result and the pre-stage comparison result.

Specifically, the preceding pulse width modulation module 180 includes a current detector 181 , a comparator 182 , a control circuit 183 and a transistor 184 . The current detector 181 is electrically coupled to the electrical coupling between the inductor 111 and the diode 112 in the boost module 110 , so as to detect the current provided to the diode 112 to generate a corresponding pre-stage current detection result. The positive input terminal of the comparator 183 is electrically coupled to the current detector 181 to obtain the previous stage current detection result, and the negative input terminal is electrically coupled to the output terminal of the previous stage comparator 170 to obtain the previous stage comparison result, and its The output end is electrically coupled to the control circuit 183 . The gate of the transistor 184 is electrically coupled to the control circuit 183 , its source is electrically coupled to the electrical coupling between the inductor 111 and the diode 112 in the boost module 110 , and its drain is grounded. The control circuit 183 generates a corresponding control signal according to the output of the comparator 182 to control whether the transistor 184 is turned on, that is, whether the electrical path from the boost module 110 to the ground through the preceding pulse width module 180 is turned on.

The circuit composed of the inductor 111 , the diode 112 and the capacitor 113 of the boost module 110 , the pre-stage feedback circuit 160 , the pre-stage comparator 170 and the pre-stage pulse width modulation module 180 can boost the input potential VIN to a certain extent.

The feedback circuit 120 includes a resistor R3 and a resistor R4. The resistor R3 and the resistor R4 are connected in series between the output terminal of the boost module 110 and the ground, and the electrical coupling between the resistor R3 and the resistor R4 serves as the output terminal of the feedback circuit 120 to provide a corresponding feedback potential VFB2 .

The reference potential generating module 130 is used for generating a reference potential VREF that changes with temperature within a specific temperature range. Specifically, the reference potential generation module 130 includes a multi-potential generation component 131 , a comparator 132 and a potential selection component 133 . The multi-potential generation component 131 is used for providing a first reference potential VREF1 and a second reference potential VREF2 , and the second reference potential VREF2 is greater than the first reference potential VREF1 . The negative input terminal of the comparator 132 receives the first reference potential VREF1 , the positive input terminal receives the reference potential VREF, and the output terminal provides an enable signal EN according to the first reference potential VREF1 and the reference potential VREF.

The potential selection component 133 determines the reference potential VREF output by the reference potential generating module 130 according to the enable signal. The potential selection component 133 includes a resistor RT1 , a temperature control resistor RT2 , a resistor RT3 , a switch 1331 and a switch 1332 . The resistor RT1 , the switch 1331 and the temperature control resistor RT2 are serially connected in series, and are electrically coupled between the second reference potential VREF2 and the ground. Whether the switch 1331 is turned on is controlled by the enable signal EN. The resistor RT1 , the switch 1332 and the resistor RT3 are serially connected in series, and are electrically coupled between the second reference potential VREF2 and the ground. Whether the switch 1332 is turned on is controlled by the inverse signal EN of the enable signal EN. The electrical coupling between the resistor RT1 and the temperature control resistors RT2 and RT3 serves as the output terminal of the reference potential generating module 130 to output the reference potential VREF.

In addition, in this embodiment, the resistance of the temperature control resistor RT2 increases as the temperature decreases, and the resistance of the temperature control resistor RT3 is the same as that of the temperature control resistor RT2 at a certain temperature (eg room temperature 25 degrees Celsius). When the temperature is higher than a certain temperature, the enable signal EN is in the non-enable state, and the inverse signal EN is in the enable state, then the switch 1331 is not turned on and the switch 1332 is turned on, then the resistor RT1, the switch 1332 and the resistor RT3 are connected in series The circuit is turned on, and the reference potential VREF at this time is determined by the circuit connected in series with the turned-on resistor RT1, the switch 1332 and the resistor RT3, then the reference potential VREF=VREF2XRT3/(RT 1+RT3). Since the resistance values of the resistors RT1 and RT3 are fixed, the reference potential VREF at this time will not change. In this embodiment, the first reference potential VREF1 can be set equal to the reference potential VREF at this time. That is to say, when the temperature is greater than a specific temperature, the reference potential VREF output by the potential selection component 133 is the first reference potential VREF1 .

When the temperature is lower than the specified temperature, the enable signal EN is in an enabled state, and the inverse signal EN is in an inactive state, so the switch 1331 is turned on and the switch 1332 is not turned on. Therefore, the circuit connected in series with resistor RT1, switch 1331 and temperature control resistor RT2 is turned on, and the reference potential VREF at this time is determined by the circuit connected in series with resistor RT1, switch 1331 and temperature control resistor RT2, then the reference potential VREF= VREF2XRT2/(RT1+RT2)=VREF2/(1+RT1/RT2). Since the resistance value of the temperature control resistor RT2 increases as the temperature drops, the reference potential VREF will change linearly with the change of the resistance value of the temperature control resistor RT2. In addition, since the temperature is lower than a specific temperature, the resistance of the temperature control resistor RT2 is greater than that of the resistor RT3 , and the reference potential VREF is greater than the first reference potential VREF1 until reaching the second reference potential VREF2 . In this embodiment, it can be set that when the temperature reaches 0 degrees Celsius, the reference potential VREF reaches the second reference potential VREF2, and when the temperature is lower than 0 degrees Celsius, the reference potential VREF keeps the second reference potential VREF2 unchanged, thereby avoiding the corresponding The output potential VGH keeps rising.

The negative input terminal of the comparator 140 is electrically coupled to the output terminal of the feedback circuit 120 to receive the feedback potential VFB2, the positive input terminal thereof is electrically coupled to the output terminal of the reference potential generating module 130 to receive the reference potential VREF, and the output terminal is based on The feedback potential VFB2 and the reference potential VREF provide corresponding comparison results.

The PWM module 150 is similar to the preceding PWM module 180 , and includes a current detector 151 , a comparator 152 , a control circuit 153 and a transistor 154 . The current detector 151 is electrically coupled to the electrical coupling between the inductor 114 and the diode 115 in the boost module 110 , so as to detect the current provided to the diode 115 to generate a corresponding current detection result. The positive input terminal of the comparator 153 is electrically coupled to the current detector 151 to obtain the current detection result, and the negative input terminal is electrically coupled to the output terminal of the comparator 130 to obtain the comparison result, and its output terminal is electrically coupled to to control the circuit 153 . The gate of the transistor 154 is electrically coupled to the control circuit 153 , its source is electrically coupled to the electrical coupling between the inductor 114 and the diode 115 in the boost module 110 , and its drain is grounded. The control circuit 153 generates a corresponding control signal according to the output result of the comparator 152, thereby controlling whether the transistor 154 is turned on, that is, whether the electrical path from the boost module 110 to the ground through the pulse width module 150 is turned on, thereby determining whether the boost module 110 output potential VGH. According to the equivalent circuit, the output potential of the boost module 110 is VGH=VREF(1+R3/R4).

Please refer to FIG. 4A and FIG. 4B , wherein FIG. 4A is a schematic diagram of the relationship between the reference potential VREF and the temperature control resistor RT2 , and FIG. 4B is a schematic diagram of the relationship between the output potential VGH and the temperature. As shown in Figures 4A and 4B, when the temperature is greater than a certain temperature (room temperature 25 degrees Celsius), whether it is based on the circuit in series with resistor RT1, switch 1331 and temperature control resistor RT2 or the circuit in series with resistor RT1, switch 1332 and resistor RT3 , the reference potential VREF will not be greater than the first reference potential VREF1, so the enable signal EN output by the comparator 132 according to the first reference potential VREF1 and the reference potential VREF is not enabled, but its inverse signal EN is enabled, Then the switch 1331 is not turned on and the switch 1332 is turned on, and the reference potential VREF will be fixed at the first reference potential VREF1 according to the circuit connected in series by the turned on RT1 , the switch 1332 and the resistor RT3 . At this time, the output potential VGH=VREF(1+R3/R4)=VREF1(1+R3/R4). That is to say, when the boost circuit 100 works in a non-low temperature state, the output potential VGH of the boost circuit 100 is fixed at the first output potential VGH1 corresponding to the first reference potential VREF1 .

When the temperature is lower than a specific temperature, the resistance value of the temperature control resistor RT2 increases at this time, and the reference potential VREF increases due to the increase of the resistance value of the temperature control resistance RT2, thereby being greater than the first reference potential VREF1, then the comparator 132 The output enable signal EN is enabled, and its inverse signal EN is not enabled. The switch 1331 is turned on and the switch 1332 is not turned on, the reference potential VREF will be determined according to the circuit connected in series with the turned on RT1, the switch 1331 and the temperature control resistor RT2, and the reference potential VREF will vary with the resistance value of the temperature control resistor RT2 changes linearly until the reference potential VREF reaches the second reference potential VREF2. Therefore, when the booster circuit 100 works in a low temperature state, the output potential VGH=VREF(1+R3/R4) of the booster circuit 100 will change linearly according to the linear change of the reference potential VREF until it reaches the value corresponding to the second The second output potential VGH2 of the reference potential VREF2=VREF2(1+R3/R4). That is to say, when the booster circuit 100 works in a low temperature state, its output potential VGH will be pulled up again, and it will change linearly according to the change of temperature within the set temperature range.

To sum up, the voltage boosting circuit disclosed in the embodiments of the present invention will increase its output potential again when it is in a low temperature environment, thereby improving the driving capability of the flat panel display driving circuit, and it will gradually increase the output potential according to the temperature change. Its output potential will not affect the display effect of the flat panel display.

Although the present invention has been disclosed above with preferred embodiments, it is not intended to limit the present invention. Anyone skilled in the art can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, this The scope of protection of the invention shall be defined by the scope of the appended patent application.

Claims (10)

1. booster circuit comprises:

One boost module comprises an input end and an output terminal, and this input end receives an input current potential, and this output terminal provides an output potential;

One feedback circuit is electrically coupled to this output terminal so that a corresponding feedback current potential to be provided according to this output potential;

One reference potential generation module is created in the specified temp interval reference potential along with temperature variation;

One first comparer has two input ends and an output terminal, and two input ends of this first comparer receive this feedback current potential and this reference potential respectively, and the output terminal of this first comparer provides one first comparative result; And

One pulse width modulation module, be electrically coupled to this first comparer and this boost module, this pulse width modulation module detect this boost module this output terminal electric current with an output current testing result, and control according to this output current testing result and this first comparative result when this boost module of conducting is through the electrical path of this pulse width modulation module to ground.

2. booster circuit according to claim 1 is characterized in that, this boost module comprises:

One first inductance has first end and second end, and first end of this first inductance is electrically coupled to this input end;

One first unidirectional feed-through assembly, have first end and second end, this first unidirectional feed-through assembly allowable current flows to second end of this unidirectional feed-through assembly from first end of this first unidirectional feed-through assembly, and first end of this first unidirectional feed-through assembly is electrically coupled to second end of this first inductance; And

One first electric capacity has first end and second end, and first end of this first electric capacity is electrically coupled to second end of this first unidirectional feed-through assembly.

3. booster circuit according to claim 1 is characterized in that, this reference potential generation module comprises:

The generation component of current potential more than provides one first reference potential and one second reference potential, and this second reference potential is greater than this first reference potential;

One second comparer has two input ends and an output terminal, and two input ends of this second comparer receive this first reference potential and this reference potential respectively, and the output terminal of this second comparer provides an activation signal; And

One current potential is selected assembly, comprising:

One first resistance has first end and second end, and first end of this first resistance is electrically coupled to this many current potentials generation component to receive this second reference potential;

One second resistance has first end and second end, and first end of this second resistance is electrically coupled to ground;

One warm electrification resistance has first end and second end, and first end of this temperature electrification resistance is electrically coupled to ground;

One first switch is electrically coupled between this first resistance and this second resistance and is subjected to this enable signal to control whether conducting; And

One second switch is electrically coupled between the resistance of this first resistance and this temperature electrification and is subjected to this enable signal to control whether conducting,

Wherein, the resistance value of this temperature electrification resistance changes with temperature, and this first switch and this second switch are subjected to the control of this enable signal and not conducting simultaneously, and the electric property coupling point of this first resistance and this first switch provides this reference potential.

4. booster circuit according to claim 3, it is characterized in that, the resistance value of this temperature electrification resistance descends with temperature and rises, the resistance value of the resistance value of this second resistance and the resistance of this temperature electrification is identical when a specified temp, and when temperature during greater than this specified temp, this enable signal makes this first switch conduction and makes this not conducting of second switch.

5. booster circuit according to claim 3, it is characterized in that, this second comparer makes this this second switch of enable signal conducting during greater than this first reference potential at this reference potential, and makes this first switch of this enable signal conducting during less than this first reference potential at this reference potential.

6. booster circuit according to claim 1 is characterized in that, this boost module comprises:

One first inductance has first end and second end;

One first unidirectional feed-through assembly, have first end and second end, this first unidirectional feed-through assembly allowable current flows to second end of this first unidirectional feed-through assembly from first end of this first unidirectional feed-through assembly, and first end of this first unidirectional feed-through assembly is electrically coupled to second end of this first inductance;

One first electric capacity has first end and second end, and first end of this first electric capacity is electrically coupled to second end of this first unidirectional feed-through assembly;

One second inductance has first end and second end, and first end of this second inductance is electrically coupled to this input end;

One second unidirectional feed-through assembly, have first end and second end, this second unidirectional feed-through assembly allowable current flows to second end of this second unidirectional feed-through assembly from first end of this second unidirectional feed-through assembly, and first end of this second unidirectional feed-through assembly is electrically coupled to second end of this second inductance; And

One second electric capacity has first end and second end, and first end of this second electric capacity is electrically coupled to second end of this second unidirectional feed-through assembly and first end of this first inductance.

7. booster circuit according to claim 6 is characterized in that, more comprises:

One prime feedback circuit, second end that is electrically coupled to this second unidirectional feed-through assembly is to obtain corresponding prime feedback current potential;

One prime comparer has two input ends and an output terminal, and two input ends of this prime comparer receive this a prime feedback current potential and fixed reference potential respectively, and the output terminal of this prime comparer is exported a prime comparative result; And

One prime pulse width modulation module, be electrically coupled to this prime feedback circuit to obtain this prime feedback current potential, this prime pulse width modulation module detect provide to the electric current of this second unidirectional feed-through assembly with a prime current detecting result, and control with this prime comparative result when this inductance capacitance boost module of conducting is through the electrical path of this prime pulse width modulation module to ground according to this prime current detecting result.

8. booster circuit according to claim 7 is characterized in that, this reference potential generation module comprises:

The generation component of current potential more than provides one first reference potential and one second reference potential, and this second reference potential is greater than this first reference potential;

One second comparer has two input ends and an output terminal, and two input ends of this second comparer receive this first reference potential and this reference potential respectively, and the output terminal of this second comparer provides an activation signal; And

One current potential is selected assembly, comprising:

One first resistance has first end and second end, and first end of this first resistance is electrically coupled to this many current potentials generation component to receive this second reference potential;

One second resistance has first end and second end, and first end of this second resistance is electrically coupled to ground;

One warm electrification resistance has first end and second end, and first end of this temperature electrification resistance is electrically coupled to ground;

One first switch is electrically coupled between this first resistance and this second resistance and is subjected to this enable signal to control whether conducting; And

One second switch is electrically coupled between the resistance of this first resistance and this temperature electrification and is subjected to this enable signal to control whether conducting,

Wherein, the resistance value of this temperature electrification resistance changes with temperature, and this first switch and this second switch are subjected to the control of this enable signal and not conducting simultaneously, and the electric property coupling point of this first resistance and this first switch provides this reference potential.

9. adjust the booster circuit of output potential with temperature for one kind, comprising:

One inductance capacitance boost module comprises an input end and an output terminal, and this input end receives an input current potential, and this output terminal provides an output potential;

One feedback circuit is electrically coupled to this output terminal so that a corresponding feedback current potential to be provided according to this output potential; And

One pulse width modulation module controls when this inductance capacitance boost module of conducting is through the electrical path of this pulse width modulation module to ground, so that this output potential is a linear change in a specified temp interval.

10. booster circuit according to claim 9 is characterized in that, more comprises:

One reference potential generation module is created in and is a reference potential of linear change in this specified temp interval; And

One first comparer has two input ends and an output terminal, and two input ends of this first comparer receive this feedback current potential and this reference potential respectively, and the output terminal of this first comparer provides one first comparative result,

Wherein, this pulse width modulation module controls according to this output current testing result and this first comparative result when this inductance capacitance boost module of conducting is through the electrical path of this pulse width modulation module to ground.

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