CN102044508A - 树脂线路板芯片正装锁孔散热块凸柱外接散热器封装结构 - Google Patents

树脂线路板芯片正装锁孔散热块凸柱外接散热器封装结构 Download PDF

Info

Publication number
CN102044508A
CN102044508A CN2010105587894A CN201010558789A CN102044508A CN 102044508 A CN102044508 A CN 102044508A CN 2010105587894 A CN2010105587894 A CN 2010105587894A CN 201010558789 A CN201010558789 A CN 201010558789A CN 102044508 A CN102044508 A CN 102044508A
Authority
CN
China
Prior art keywords
chip
radiating block
radiator
circuit board
resin circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2010105587894A
Other languages
English (en)
Inventor
王新潮
梁志忠
薛海冰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JCET Group Co Ltd
Original Assignee
Jiangsu Changjiang Electronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jiangsu Changjiang Electronics Technology Co Ltd filed Critical Jiangsu Changjiang Electronics Technology Co Ltd
Priority to CN2010105587894A priority Critical patent/CN102044508A/zh
Publication of CN102044508A publication Critical patent/CN102044508A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71

Abstract

本发明涉及一种树脂线路板芯片正装锁孔散热块凸柱外接散热器封装结构，包含有芯片(3)、单层或多层树脂线路板(9)、金属丝(5)和的塑封体(8)，所述芯片(3)上方设置有散热块(7)，该散热块(7)带有锁定孔(7.1)，该散热块(7)与所述芯片(3)之间嵌置有导电或不导电的导热粘结物质Ⅱ(6)；在所述散热块(7)上方设置有散热器(11)，所述散热器(11)下端面中间凸出设置有一凸柱(11.1)，所述散热器(11)通过该凸柱(11.1)与带有锁定孔的散热块(7)接插连接；并在该散热器(11)与所述散热块(7)之间以及在所述锁定孔(7.1)内嵌置有导电或不导电的导热粘结物质Ⅲ(13)。本发明封装结构能够提供散热的能力强，使芯片的热量能快速的传导到封装体外界。

Description

树脂线路板芯片正装锁孔散热块凸柱外接散热器封装结构
技术领域
本发明涉及一种树脂线路板芯片正装锁孔散热块凸柱外接散热器封装结构。属于半导体封装技术领域。
背景技术
传统的芯片封装形式的散热方式，主要是采用了芯片下方的金属基岛作为散热传导工具或途径，而这种传统封装方式的散热传导存在以下的不足点：
1、金属基岛体积太小
金属基岛在传统封装形式中，为了追求封装体的可靠性安全，几乎都采用了金属基岛埋入在封装体内，而在有限的封装体内，同时要埋入金属基岛及信号、电源传导用的金属内脚（如图1及图2所示），所以金属基岛的有效面积与体积就显得非常的小，而同时金属基岛还要来担任高热量的散热的功能，就会显得更为的不足了。
2、埋入型金属基岛（如图1及图2所示）
金属基岛在传统封装形式中，为了追求封装体的可靠性安全，几乎都采用了金属基岛埋入在封装体内，而金属基岛是依靠左右或是四个角落细细的支撑杆来固定或支撑金属基岛，也因为这细细的支撑杆的特性，导致了金属基岛从芯片上所吸收到的热量，无法快速的从细细的支撑杆传导出来，所以芯片的热量无法或快速的传导到封装体外界，导致了芯片的寿命快速老化甚至烧伤或烧坏。
3、金属基岛露出型（如图3及图4所示）
虽然金属基岛是露出的，可以提供比埋入型的散热功能还要好的散热能力，但是因为金属基岛的体积及面积在封装体内还是非常的小，所以能够提供散热的能力，还是非常有限。
发明内容
本发明的目的在于克服上述不足，提供一种能够提供散热的能力强的树脂线路板芯片正装锁孔散热块凸柱外接散热器封装结构。
本发明的目的是这样实现的：一种树脂线路板芯片正装锁孔散热块凸柱外接散热器封装结构，包含有芯片、芯片下方的所承载的单层或多层树脂线路板、芯片到单层或多层树脂线路板的信号互连用的金属丝、芯片与所述单层或多层树脂线路板之间的导电或不导电的导热粘结物质Ⅰ和的塑封体，在所述芯片上方设置有散热块，该散热块带有锁定孔，该散热块与所述芯片之间嵌置有导电或不导电的导热粘结物质Ⅱ；在所述散热块上方设置有散热器，所述散热器下端面中间凸出设置有一凸柱，所述散热器通过该凸柱与带有锁定孔的散热块接插连接；并在该散热器与所述散热块之间以及在所述锁定孔内嵌置有导电或不导电的导热粘结物质Ⅲ。 
本发明的有益效果是：
本发明通过在芯片上方增置散热块，以及在塑封体外增设散热器， 来担任高热量的散热的功能，能够提供散热的能力强，使芯片的热量能快速的传导到封装体外界。可以应用在一般的封装形式的封装体及封装工艺上使其成为高或是超高散热(High Thermal or Super High Thermal)能力，如FBP可以成为SHT-FBP / QFN可以成为SHT-QFN / BGA可以成为 SHT-BGA / CSP可以成为SHT-CSP ……。避免了芯片的寿命快速老化甚至烧伤或烧坏。
附图说明
图1为以往金属基岛埋入型芯片封装结构示意图。
图2为图1的俯视图。
图3为以往金属基岛露出型芯片封装结构示意图。
图4为图3的俯视图。
图5为本发明树脂线路板芯片正装锁孔散热块凸柱外接散热器封装结构实施例1示意图。
图6为本发明树脂线路板芯片正装锁孔散热块凸柱外接散热器封装结构实施例2示意图。
图7为本发明树脂线路板芯片正装锁孔散热块凸柱外接散热器封装结构实施例3示意图。
图中附图标记：
导电或不导电的导热粘结物质Ⅰ2、芯片3、金属丝5、导电或不导电的导热粘结物质Ⅱ6、散热块7、锁定孔7.1、塑封体8、树脂线路板9、散热器11、凸柱11.1、导电或不导电的导热粘结物质Ⅲ13。
具体实施方式
实施例1：
参见图5，图5为本发明树脂线路板芯片正装锁孔散热块凸柱外接散热器封装结构实施例1示意图。由图5可以看出，本发明一种树脂线路板芯片正装锁孔散热块凸柱外接散热器封装结构，包含有芯片3、芯片下方的所承载的单层或多层树脂线路板9、芯片到单层或多层树脂线路板的信号互连用的金属丝5、芯片与所述单层或多层树脂线路板9之间的导电或不导电的导热粘结物质Ⅰ2和的塑封体8，在所述芯片3上方设置有散热块7，该散热块7带有锁定孔7.1，该散热块7与所述芯片3之间嵌置有导电或不导电的导热粘结物质Ⅱ6；在所述散热块7上方设置有散热器11，所述散热器11下端面中间凸出设置有一凸柱11.1，所述散热器11通过该凸柱11.1与带有锁定孔的散热块7接插连接；并在该散热器11与所述散热块7之间以及在所述锁定孔7.1内嵌置有导电或不导电的导热粘结物质Ⅲ13；以将散热器11和散热块7二者相互固定或粘结。所述散热块7的材质可以是铜、铝、陶瓷或合金等。
所述散热块7的材质可以是铜、铝、陶瓷或合金等。
所述散热器11的材质可以是铜、铝、陶瓷或合金等。
注：发明创造名称中所述“锁孔”是指“锁定孔7.1”。
实施例2：
实施例2与实施例1的不同之处仅在于：所述散热器11为散热帽，如图6。
实施例3：
实施例3与实施例1的不同之处仅在于：所述散热器11为散热板，如图7。

Claims (5)

1. 一种树脂线路板芯片正装锁孔散热块凸柱外接散热器封装结构，包含有芯片(3)、芯片下方的所承载的单层或多层树脂线路板(9)、芯片到单层或多层树脂线路板的信号互连用的金属丝(5)、芯片与所述单层或多层树脂线路板(9)之间的导电或不导电的导热粘结物质Ⅰ(2)和的塑封体(8)，其特征在于在所述芯片(3)上方设置有散热块(7)，该散热块(7)带有锁定孔(7.1)，该散热块(7)与所述芯片(3)之间嵌置有导电或不导电的导热粘结物质Ⅱ(6)；在所述散热块(7)上方设置有散热器(11)，所述散热器(11)下端面中间凸出设置有一凸柱(11.1)，所述散热器(11)通过该凸柱(11.1)与带有锁定孔的散热块(7)接插连接；并在该散热器(11)与所述散热块(7)之间以及在所述锁定孔(7.1)内嵌置有导电或不导电的导热粘结物质Ⅲ(13)。
2.根据权利要求1所述的一种树脂线路板芯片正装锁孔散热块凸柱外接散热器封装结构，其特征在于所述散热块(7)的材质是铜、铝、陶瓷或合金。
3.根据权利要求1所述的一种树脂线路板芯片正装锁孔散热块凸柱外接散热器封装结构，其特征在于散热器(11)的材质是铜、铝、陶瓷或合金。
4.根据权利要求1、2或3所述的一种树脂线路板芯片正装锁孔散热块凸柱外接散热器封装结构，其特征在于：所述散热器(11)为散热帽。
5.根据权利要求1、2或3所述的一种树脂线路板芯片正装锁孔散热块凸柱外接散热器封装结构，其特征在于：所述散热器(11)为散热板。
CN2010105587894A 2010-01-30 2010-11-25 树脂线路板芯片正装锁孔散热块凸柱外接散热器封装结构 Pending CN102044508A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2010105587894A CN102044508A (zh) 2010-01-30 2010-11-25 树脂线路板芯片正装锁孔散热块凸柱外接散热器封装结构

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
CN201010117811 2010-01-30
CN201010117748.1 2010-01-30
CN201010117811.1 2010-01-30
CN201010117382 2010-01-30
CN201010117748 2010-01-30
CN201010117382.8 2010-01-30
CN2010105587894A CN102044508A (zh) 2010-01-30 2010-11-25 树脂线路板芯片正装锁孔散热块凸柱外接散热器封装结构

Publications (1)

Publication Number Publication Date
CN102044508A true CN102044508A (zh) 2011-05-04

Family

ID=43910515

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010105587894A Pending CN102044508A (zh) 2010-01-30 2010-11-25 树脂线路板芯片正装锁孔散热块凸柱外接散热器封装结构

Country Status (1)

Country Link
CN (1) CN102044508A (zh)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05299544A (ja) * 1992-04-20 1993-11-12 Hitachi Ltd 半導体装置
US5814536A (en) * 1995-12-27 1998-09-29 Lsi Logic Corporation Method of manufacturing powdered metal heat sinks having increased surface area
CN1355564A (zh) * 2000-11-24 2002-06-26 矽品精密工业股份有限公司 半导体封装件及其制造方法
CN1400657A (zh) * 2001-07-26 2003-03-05 株式会社电装 压铸的功率器件及其制造方法
CN1630073A (zh) * 2003-12-19 2005-06-22 威宇科技测试封装有限公司 芯片球栅阵列封装结构

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05299544A (ja) * 1992-04-20 1993-11-12 Hitachi Ltd 半導体装置
US5814536A (en) * 1995-12-27 1998-09-29 Lsi Logic Corporation Method of manufacturing powdered metal heat sinks having increased surface area
CN1355564A (zh) * 2000-11-24 2002-06-26 矽品精密工业股份有限公司 半导体封装件及其制造方法
CN1400657A (zh) * 2001-07-26 2003-03-05 株式会社电装 压铸的功率器件及其制造方法
CN1630073A (zh) * 2003-12-19 2005-06-22 威宇科技测试封装有限公司 芯片球栅阵列封装结构

Similar Documents

Publication Publication Date Title
CN201629316U (zh) 印刷线路板芯片正装锁孔散热块凸柱外接散热板封装结构
CN201629318U (zh) 印刷线路板芯片倒装倒t型锁定孔散热块封装结构
CN201623151U (zh) 树脂线路板芯片正装锁孔散热块凸柱外接散热板封装结构
CN201629311U (zh) 印刷线路板芯片正装锁孔散热块凸柱外接散热器封装结构
CN201623102U (zh) 印刷线路板芯片倒装锁孔散热块凸柱外接散热帽封装结构
CN201751996U (zh) 印刷线路板芯片正装矩型锁孔散热块外接散热器封装结构
CN201751983U (zh) 树脂线路板芯片倒装锁孔矩型散热块外接散热器封装结构
CN201623106U (zh) 树脂线路板芯片正装锁孔散热块凸柱外接散热器封装结构
CN102074523A (zh) 树脂线路板芯片倒装锁孔散热块凸柱外接散热器封装结构
CN201623055U (zh) 印刷线路板芯片正装带锁定孔散热块表面凸出封装结构
CN201623073U (zh) 树脂线路板芯片正装锁孔散热块凸柱外接散热帽封装结构
CN201754402U (zh) 印刷线路板芯片正装带锁定孔矩形散热块封装结构
CN201623081U (zh) 印刷线路板芯片倒装倒t型散热块外接散热器封装结构
CN201623101U (zh) 印刷线路板芯片正装锁定孔散热块外接散热板封装结构
CN201751990U (zh) 印刷线路板芯片正装锁孔散热块凸柱外接散热帽封装结构
CN201623111U (zh) 树脂线路板芯片正装矩型锁孔散热块外接散热器封装结构
CN102044508A (zh) 树脂线路板芯片正装锁孔散热块凸柱外接散热器封装结构
CN201623080U (zh) 印刷线路板芯片倒装锁孔散热块凸柱外接散热板封装结构
CN201623108U (zh) 树脂线路板芯片正装锁定孔散热块外接散热板封装结构
CN201623154U (zh) 印刷线路板芯片正装带矩形散热块封装结构
CN201751992U (zh) 印刷线路板芯片倒装矩型散热块外接散热器封装结构
CN201751988U (zh) 树脂线路板芯片倒装外接散热板封装结构
CN201751989U (zh) 树脂线路板芯片倒装倒t型散热块外接散热器封装结构
CN201629304U (zh) 印刷线路板芯片正装锁定孔散热块外接散热帽封装结构
CN201629326U (zh) 基岛露出芯片正装矩型锁定孔散热块外接散热器封装结构

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Open date: 20110504