CN201751983U - 树脂线路板芯片倒装锁孔矩型散热块外接散热器封装结构 - Google Patents

树脂线路板芯片倒装锁孔矩型散热块外接散热器封装结构 Download PDF

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CN201751983U
CN201751983U CN2010201187578U CN201020118757U CN201751983U CN 201751983 U CN201751983 U CN 201751983U CN 2010201187578 U CN2010201187578 U CN 2010201187578U CN 201020118757 U CN201020118757 U CN 201020118757U CN 201751983 U CN201751983 U CN 201751983U
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chip
radiating block
circuit board
resin circuit
heat
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王新潮
梁志忠
承杰
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JCET Group Co Ltd
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Jiangsu Changjiang Electronics Technology Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49171Fan-out arrangements
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    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73253Bump and layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
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    • H01ELECTRIC ELEMENTS
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Abstract

本实用新型涉及一种树脂线路板芯片倒装锁孔矩型散热块外接散热器封装结构,包含有芯片(3)、单层或多层树脂线路板(9)、金属凸块(10)和塑封体(8),在所述芯片(3)上方设置有散热块(7),该散热块(7)带有锁孔(7.1),该散热块(7)与所述芯片(3)之间嵌置有导电或不导电的导热粘结物质II(6);在所述散热块(7)上方设置有散热器(11),所述散热器(11)用螺丝(12)通过所述锁孔(7.1)与散热块(7)固定连接,所述散热块(7)呈矩型结构。本实用新型能够提供散热的能力强,使芯片的热量能快速的传导到封装体外界。

Description

树脂线路板芯片倒装锁孔矩型散热块外接散热器封装结构 
(一)技术领域
本实用新型涉及一种树脂线路板芯片倒装锁孔矩型散热块外接散热器封装结构。属于半导体封装技术领域。 
(二)背景技术
传统的芯片封装形式的散热方式,主要是采用了芯片下方的金属基岛作为散热传导工具或途径,而这种传统封装方式的散热传导存在以下的不足点: 
1、金属基岛体积太小 
金属基岛在传统封装形式中,为了追求封装体的可靠性安全,几乎都采用了金属基岛埋入在封装体内,而在有限的封装体内,同时要埋入金属基岛及信号、电源传导用的金属内脚(如图1及图2所示),所以金属基岛的有效面积与体积就显得非常的小,而同时金属基岛还要来担任高热量的散热的功能,就会显得更为的不足了。 
2、埋入型金属基岛(如图1及图2所示) 
金属基岛在传统封装形式中,为了追求封装体的可靠性安全,几乎都采用了金属基岛埋入在封装体内,而金属基岛是依靠左右或是四个角落细细的支撑杆来固定或支撑金属基岛,也因为这细细的支撑杆的特性,导致 了金属基岛从芯片上所吸收到的热量,无法快速的从细细的支撑杆传导出来,所以芯片的热量无法或快速的传导到封装体外界,致了芯片的寿命快速老化甚至烧伤或烧坏。 
3、金属基岛露出型(如图3及图4所示) 
虽然金属基岛是露出的,可以提供比埋入型的散热功能还要好的散热能力,但是因为金属基岛的体积及面积在封装体内还是非常的小,所以能够提供散热的能力,还是非常有限。 
(三)发明内容
本实用新型的目的在于克服上述不足,提供一种能够提供散热的能力强的树脂线路板芯片倒装锁孔矩型散热块外接散热器封装结构。 
本实用新型的目的是这样实现的:一种树脂线路板芯片倒装锁孔矩型散热块外接散热器封装结构,包含有芯片、芯片下方的所承载的单层或多层树脂线路板、芯片到单层或多层树脂线路板的信号互连用的金属凸块、芯片与所述单层或多层树脂线路板之间的导电或不导电的导热粘结物质I和塑封体,在所述芯片上方设置有散热块,该散热块带有锁孔,该散热块与所述芯片之间嵌置有导电或不导电的导热粘结物质II;在所述散热块上方设置有散热器,所述散热器用螺丝通过所述锁孔与散热块固定连接,所述散热块呈矩型结构。 
本实用新型的有益效果是: 
本实用新型通过在芯片上方增置散热块,以及在塑封体外增设散热器,来担任高热量的散热的功能,能够提供散热的能力强,使芯片的热量能快 速的传导到封装体外界。可以应用在一般的封装形式的封装体及封装工艺上使其成为高或是超高散热(High Thermal or Super High Thermal)能力,如FBP可以成为SHT-FBP/QFN可以成为SHT-QFN/BGA可以成为SHT-BGA/CSP可以成为SHT-CSP……。避免了芯片的寿命快速老化甚至烧伤或烧坏。 
(四)附图说明
图1为以往金属基岛埋入型芯片封装结构示意图。 
图2为图1的俯视图。 
图3为以往金属基岛露出型芯片封装结构示意图。 
图4为图3的俯视图。 
图5为本实用新型树脂线路板芯片倒装锁孔矩型散热块外接散热器封装结构示意图。 
图中附图标记: 
导电或不导电的导热粘结物质I 2、芯片3、导电或不导电的导热粘结物质II 6、散热块7、锁孔7.1、塑封体8、树脂线路板9、金属凸块10、散热器11、螺丝12。 
(五)具体实施方式
参见图5,图5为本实用新型树脂线路板芯片倒装锁孔矩型散热块外接散热器封装结构示意图。由图5可以看出,本实用新型树脂线路板芯片倒装锁孔矩型散热块外接散热器封装结构,包含有芯片3、芯片下方的所承载的单层或多层树脂线路板9、芯片到单层或多层树脂线路板的信号互 连用的金属凸块10、芯片与所述单层或多层树脂线路板之间的导电或不导电的导热粘结物质I 2和塑封体8,在所述芯片3上方设置有散热块7,该散热块7带有锁孔7.1,该散热块7与所述芯片3之间嵌置有导电或不导电的导热粘结物质II 6;在所述散热块7上方设置有散热器11,所述散热器11用螺丝12通过所述锁孔7.1与散热块7固定连接,所述散热块7呈矩型结构。 
所述散热块7的材质可以是铜、铝、陶瓷或合金等。 
所述金属凸块10的材质可以是锡、金或合金等。 
所述散热器11的材质可以是铜、铝、陶瓷或合金等。

Claims (4)

1.一种树脂线路板芯片倒装锁孔矩型散热块外接散热器封装结构,包含有芯片(3)、芯片下方的所承载的单层或多层树脂线路板(9)、芯片到单层或多层树脂线路板的信号互连用的金属凸块(10)、芯片与所述单层或多层树脂线路板之间的导电或不导电的导热粘结物质I(2)和塑封体(8),其特征在于在所述芯片(3)上方设置有散热块(7),该散热块(7)带有锁孔(7.1),该散热块(7)与所述芯片(3)之间嵌置有导电或不导电的导热粘结物质II(6);在所述散热块(7)上方设置有散热器(11),所述散热器(11)用螺丝(12)通过所述锁孔(7.1)与散热块(7)固定连接,所述散热块(7)呈矩型结构。
2.根据权利要求1所述的一种树脂线路板芯片倒装锁孔矩型散热块外接散热器封装结构,其特征在于所述散热块(7)的材质是铜、铝、陶瓷或合金。
3.根据权利要求1所述的一种树脂线路板芯片倒装锁孔矩型散热块外接散热器封装结构,其特征在于所述金属凸块(10)的材质是锡、金或合金。
4.根据权利要求1所述的一种树脂线路板芯片倒装锁孔矩型散热块外接散热器封装结构,其特征在于所述散热器(11)的材质是铜、铝、陶瓷或合金。 
CN2010201187578U 2010-01-30 2010-01-30 树脂线路板芯片倒装锁孔矩型散热块外接散热器封装结构 Expired - Fee Related CN201751983U (zh)

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