CN102034916A

CN102034916A - Light emitting semiconductor device, light emitting semiconductor module and lighting device

Info

Publication number: CN102034916A
Application number: CN2010102869032A
Authority: CN
Inventors: 大塚康二
Original assignee: Sanken Electric Co Ltd
Current assignee: Sanken Electric Co Ltd
Priority date: 2009-09-29
Filing date: 2010-09-16
Publication date: 2011-04-27
Also published as: TW201125169A; JP2011077168A; KR20110035849A; KR101147322B1

Abstract

The invention provides a light emitting semiconductor device, a light emitting semiconductor module and a lighting device. The light emitting semiconductor device (1) is provided with: a packaged substrate (2) provided with a groove (21R) forming an opening having the size of a first direction (X) longer than the size of a second direction (Y); light emitting elements (3) are many and disposed in the first direction (X) of the bottom (211B) of the groove (21R); light transmission resin (6) is disposed in the groove (21R) to cover the light emitting elements (3); and a collector lens (8) converging light emitted from the light-emitting elements (3) and through an opening to a light outgoing direction (Ae) of the second direction (Y), a main lens zone (81) keeping converged proportion at a certain proportion in the first direction (X), and secondary lens zones (82) at one end and the other end of the first direction (X) making light emitted by the light-emitting elements (3) perform refraction toward the first direction (X).

Description

Semiconductor light-emitting apparatus, semiconductor light emitting module and lighting device

Technical field

The present invention relates to semiconductor light-emitting apparatus, semiconductor light emitting module and lighting device, particularly be fit to illumination semiconductor light-emitting apparatus, modular semiconductor light emitting module of this semiconductor light-emitting apparatus and group have been gone into the lighting device of this semiconductor light emitting module.

Background technology

Exist in the tendency of using semiconductor light-emitting apparatus in the light emitting source backlight of liquid crystal indicator (LCD:liquid crystal display).This semiconductor light-emitting apparatus specifically is light-emitting diode (LED:light emitting diodes).Light-emitting diode is that consumed power is few, the life-span is long, and is suitable for not containing the light emitting source of environment of the harmful substance of mercury etc.

The semiconductor light-emitting apparatus that possesses the light guide plate at the back side that is configured in display panels and be configured in the side of this light guide plate backlight.Liquid crystal indicator has the tendency of maximization and slimming, and with display panels, maximization backlight and slimming become the important techniques problem.

Though be not known, this case applicant discloses liquid crystal indicator or the maximization of suitable lighting device and the semiconductor light-emitting apparatus of slimming in patent application 2008-155822 number of application before.Disclosed semiconductor light-emitting apparatus has in the patent documentation 1: base plate for packaging, the thickness of its width and light guide plate is roughly the same, and on the face direction of light guide plate, have elongated rectangular shape, and have groove, be equipped with side opening opposing on this groove with light guide plate; A plurality of light-emitting components, arrange to the face direction of light guide plate its bottom at groove; And translucent resin, its covering luminous element and be provided in the inside of groove.For example use light-emitting diode for light-emitting component.

In this semiconductor light-emitting apparatus, owing to use the roughly the same base plate for packaging of thickness of width and light guide plate, therefore can make slimming backlight, can realize the slimming of liquid crystal indicator.And then, in this semiconductor light-emitting apparatus, because inside at the groove of a base plate for packaging, on the face direction of light guide plate, possess a plurality of light-emitting components, improved the brightness of unit are, therefore can sufficient light characteristic can be guaranteed at the maximization of light guide plate, the maximization of liquid crystal indicator can be realized.

The present application people uses disclosed semiconductor light-emitting apparatus in the above-mentioned patent documentation 1, is developing that consumed power is few, the life-span is long, and the lighting device of the environment that is suitable for not containing hazardous substance, particularly the street lamp that is thrown light in road or pavement.Above-mentioned semiconductor light-emitting apparatus mainly is to develop as the light emitting source backlight of liquid crystal indicator, has the structure that disposes and penetrate to this side light near the side of light guide plate.Therefore, the light-emitting face of the base plate for packaging of semiconductor light-emitting apparatus (the open side surface of groove) is flat face, and does not set lens especially.And, when semiconductor light-emitting apparatus is used as street lamp,, need satisfy the luminosity (brightness) of safety standard in order to ensure the fail safe of application place.

Therefore, the present application people has manufactured experimently the street lamp of arranging a plurality of semiconductor light-emitting apparatus at certain intervals and the transparency cover of blocking shell nozzle has been installed on the downside towards road or pavement having the street lamp housing of shell nozzle.The inner face of street lamp housing has the function as reflecting plate, and transparency cover makes in the light transmission that semiconductor light-emitting apparatus sends, and has the function that the protection semiconductor light-emitting apparatus is not subjected to the external environment influence of wind and rain etc.

So in the street lamp of trial-production, can road or pavement be thrown light on though have sufficient luminosity, illumination zone concentrates on road or pavement side, and is insufficient to the illumination of the side surface direction of street lamp.Promptly, because though the illumination on road under the conduct of the street lamp of this trial-production or pavement has best brightness, but as the illumination around it is inadequate, and can not obtain the sufficient brightness around the street lamp, be unsuitable as anticrime measure therefore.

The present application people tries to adopt the transparency cover with convex striped, and light is disperseed around street lamp.But, because the light-emitting face of the base plate for packaging in the semiconductor light-emitting apparatus is flat face, and have the light exit direction of the light that sends from this semiconductor light-emitting apparatus with respect to light-emitting face to a certain extent near the characteristic of vertical direction, therefore there is boundary in the light that disperses around street lamp (luminosity of the side of street lamp improves).

The present application people is conceived on the light-emitting face of base plate for packaging lens are installed in the result of trial and error, and the direct light exit direction of the light that sends from semiconductor light-emitting apparatus of control.Because base plate for packaging has rectangular shape, therefore adopt to have certain radius of curvature of assembling on the Width of base plate for packaging, and have the lens of the certain semi-cylindrical form (half-conical shape) of the ratio maintenance that will assemble in the longitudinal direction.In the semiconductor light-emitting apparatus that these lens have been installed, when the length direction that makes base plate for packaging is consistent with the bearing of trend on road or pavement, on the Width on road or pavement, light is assembled, can have sufficient luminosity and road or pavement are thrown light on, can make very bright street lamp.But, even in the semiconductor light-emitting apparatus that these lens have been installed, owing to almost can not get dispersion, and, therefore can not make for street lamp suitable in the anticrime measure again because of inappropriate for the illumination around the street lamp to the light of the Width of base plate for packaging.

Summary of the invention

The present invention proposes in order to solve above-mentioned problem.Therefore, the object of the present invention is to provide a kind of semiconductor light-emitting apparatus, it can improve the convergence of the light that sends to the light exit direction, and improves the luminosity of the light of emission around the light exit direction.

And then, the invention provides the semiconductor light emitting module that can simply above-mentioned semiconductor light-emitting apparatus group be gone into to lighting device.

And then, the invention provides a kind of lighting device, it has sufficient brightness to road or pavement, and has the brightness of appropriateness around, thereby is suitable for anticrime measure.

In order to solve above-mentioned problem, the 1st feature of embodiments of the invention is in semiconductor light-emitting apparatus, comprising: base plate for packaging, and it has the groove of the opening that the size that constituted the 1st direction grows than the size of the 2nd direction of intersecting with the 1st direction; Light-emitting component, its bottom at groove is equipped with a plurality of on the 1st direction; Translucent resin, it sets at the inside of groove covering luminous element; And collector lens, it is on the 2nd direction, will from light-emitting component send and optical convergence by opening to the light exit direction, and have the ratio that on the 1st direction, will assemble and keep certain main lens zone, on the end of the 1st direction and the other end, have and make the light that sends from light-emitting component secondary lens area to the refraction of the 1st direction.

In the collector lens of the semiconductor light-emitting apparatus of the 1st feature, the interior angle of light between the bottom surface of the open side of the plane of refraction of the 1st direction refraction and secondary lens area that make of secondary lens area is set in the scope of acute angle.

In the collector lens of the semiconductor light-emitting apparatus of the 1st feature, the plane of refraction of secondary lens area and the interior angle between the bottom surface are set at 30 degree to the scopes of 80 degree.

In the collector lens of the semiconductor light-emitting apparatus of the 1st feature, the plane of refraction of secondary lens area is set more than 20% of thickness for the light exit direction in main lens zone.

In the collector lens of the semiconductor light-emitting apparatus of the 1st feature, the plane of refraction of secondary lens area is provided in the zone of repeating with this opening in the end of the 1st direction of opening and the other end.

In the collector lens of the semiconductor light-emitting apparatus of the 1st feature, the plane of refraction of secondary lens area is provided in the outside of the 1st direction of the end of the 1st direction of opening and this opening in the other end.

In the collector lens of the semiconductor light-emitting apparatus of the 1st feature, the plane of refraction of secondary lens area is provided in the outside of the 1st direction of the end of the 1st direction of opening and this opening in the other end, and this plane of refraction is the caustic surface that will send from light-emitting component and assemble to the 1st direction by the light of opening.

Collector lens at the semiconductor light-emitting apparatus of the 1st feature has: the main lens zone with semi-cylindrical form; And the secondary lens area that becomes caustic surface at an end and the other end of the 1st direction respectively with convex lens shape, collector lens also has: the 1st location division and the 2nd location division, it is provided in the edge part along the extension of the 1st direction in main lens zone respectively, to positioning to extension of the 1st direction and relative the 1st side and the 2nd side of base plate for packaging; And the 3rd location division and the 4th location division, it is provided in the bottom surface of the open side of secondary lens area respectively, to extending and relative the 3rd side and the 4th side positions to the 2nd direction of base plate for packaging.

The 2nd feature of embodiments of the invention is in the semiconductor light emitting module, comprising: a plurality of semiconductor light-emitting apparatus, and it comprises: base plate for packaging, it has the groove of the opening that the size that constituted the 1st direction grows than the size of the 2nd direction of intersecting with the 1st direction; Light-emitting component, its bottom at groove is equipped with a plurality of on the 1st direction; Translucent resin, it sets at the inside of groove covering luminous element; And collector lens, it is on the 2nd direction, will from light-emitting component send and optical convergence by opening to the light exit direction, and have the ratio that on the 1st direction, will assemble and keep certain main lens zone, on the end of the 1st direction and the other end, have and make the light that sends from light-emitting component secondary lens area to the refraction of the 1st direction; And installation base plate, it arranges and installs semiconductor light-emitting apparatus across certain intervals on the 2nd direction.

The 3rd feature of embodiments of the invention is, in lighting device, comprise: the lighting device housing, it is equipped with the semiconductor light emitting module relevant with the 2nd feature, and have illumination and use opening, this illumination is passed through to the light exit direction with the light that opening sends the collector lens of the semiconductor light-emitting apparatus by the semiconductor light emitting module; Euphotic cover, it blocks the illumination opening; And the power supply linkage unit, it is used to connect semiconductor light emitting module and power supply.

According to the present invention, the convergent while of the light that a kind of raising sends to the light exit direction can be provided, can improve the semiconductor light-emitting apparatus of the luminosity of the light that around the light exit direction, sends.

And then, according to the present invention, can provide a kind of semiconductor light emitting module that can easily above-mentioned semiconductor light-emitting apparatus group be gone into to lighting device.

And then, according to the present invention, can provide a kind of road or pavement are had sufficient brightness, and to around have the brightness of appropriateness, thereby be suitable for the lighting device of anticrime measure.

Description of drawings

Fig. 1 is the portions cut stereogram of the semiconductor light-emitting apparatus of embodiments of the invention 1.

Fig. 2 is the sectional view that cuts off semiconductor light-emitting apparatus shown in Figure 1 in the 2nd direction.

Fig. 3 is a vertical view of observing semiconductor light-emitting apparatus shown in Figure 1 from the 3rd direction.

Fig. 4 is the side view of the collector lens of semiconductor light-emitting apparatus shown in Figure 1.

Fig. 5 (A) is the side view of semiconductor light-emitting apparatus shown in Figure 1, (B) is the side view of the semiconductor light-emitting apparatus of the 1st comparative example, (C) is the side view of the semiconductor light-emitting apparatus of the 2nd comparative example.

Fig. 6 is the figure of orientation characteristic that the 1st direction of semiconductor light-emitting apparatus shown in Figure 5 is shown.

Fig. 7 is the figure of orientation characteristic that the 2nd direction of semiconductor light-emitting apparatus shown in Figure 5 is shown.

Fig. 8 is the side view of state that is illustrated in the ratio of the secondary lens area that has changed collector lens in the semiconductor light-emitting apparatus shown in Figure 1.

Fig. 9 is the figure of orientation characteristic that the 1st direction of semiconductor light-emitting apparatus shown in Figure 8 is shown.

Figure 10 is the side view that is illustrated in the state of the angle of the plane of refraction of the secondary lens area of change collector lens in the semiconductor light-emitting apparatus shown in Figure 1.

Figure 11 is the figure of orientation characteristic that the 1st direction of semiconductor light-emitting apparatus shown in Figure 10 is shown.

Figure 12 is the plane graph of the semiconductor light emitting module of embodiment 1.

Figure 13 is the stereogram of the lighting device of embodiment 1.

Figure 14 is the side view that arranged illumination devices state shown in Figure 13 is shown.

Figure 15 is the front view that arranged illumination devices state shown in Figure 13 is shown.

Figure 16 is the Illumination Distribution figure of lighting device shown in Figure 13.

Figure 17 is the sectional view of the semiconductor light-emitting apparatus of embodiments of the invention 2.

Figure 18 is the stereogram of the semiconductor light-emitting apparatus of embodiments of the invention 3.

Figure 19 is the side view of semiconductor light-emitting apparatus shown in Figure 180.

Figure 20 is the rear isometric view of collector lens of the semiconductor light-emitting apparatus of embodiment 3.

Figure 21 is the sectional view that cuts off the semiconductor light-emitting apparatus of embodiments of the invention 4 on the 2nd direction.

Description of symbols:

1: semiconductor light-emitting apparatus 2: base plate for packaging

21R: groove 213: opening

3: light-emitting component 4: lead-in wire

6: translucent resin 8: collector lens

81: main lens zone 82: secondary lens area

81RS, 82RS: plane of refraction 83: bottom surface

85A: the 1st location division 85B: the 2nd location division

86A: the 3rd location division 86B: the 4th location division

10: semiconductor light emitting module 101: installation base plate

110: power supply linkage unit 15: lighting device

150: lighting device housing 151: the illumination opening

152: translucent cover

Embodiment

Below, with reference to the description of drawings embodiments of the invention.In the record of following accompanying drawing, enclose identical or similar symbol for identical or similar part.But accompanying drawing is schematically, and is different with reality.And, even accompanying drawing also has the different part of size relationship or ratio each other.

And, embodiment illustration shown below be used for specializing the device or the method for the technological thought of this invention, the technological thought of this invention not with the configuration of each component parts etc. specific to following structures.Within the scope of the claims, can carry out various changes to the technological thought of this invention.

(embodiment 1)

Embodiments of the invention 1 have illustrated in the semiconductor light-emitting apparatus as the light emitting source of street lamp that lighting device particularly uses in the illumination on road or pavement, group to have gone into the semiconductor light emitting module of this semiconductor light-emitting apparatus and possessed in the lighting device of this semiconductor light emitting module to be suitable for example of the present invention.

[overall structure of semiconductor light-emitting apparatus]

As shown in Figure 1 to Figure 3, the semiconductor light-emitting apparatus 1 of embodiment 1 has: base plate for packaging 2, and it has groove 21R, the opening 213 that the size that this groove 21R has constituted the 1st direction X is grown than the size of the 2nd direction Y that intersects with the 1st direction X; Light-emitting component 3, its bottom of groove 21R 211B, on the 1st direction X, be equipped with a plurality of; Translucent resin 6, mode with covering luminous element 3 sets in the inside of groove 21R for it; Collector lens 8, it has main lens zone 81, it will send and light by opening 213 converges to light exit direction Ae at the 2nd direction Y from light-emitting component 3, and the ratio that will assemble on the 1st direction X keeps certain, and collector lens 8 has secondary lens area 82 on the end of the 1st direction X and the other end, and it makes the light that sends from light-emitting component 3 reflect at the 1st direction X (light disperses direction Aa).

Herein, the 1st direction X is the direction consistent with the X-axis of reference axis, is the direction consistent with the length direction of base plate for packaging 2.Though the 2nd direction Y is so long as the direction of the angular range that less than 180 is spent gets final product surpassing 0 degree with respect to the 1st direction X basically, but in embodiment 1 direction consistent with the Y-axis of orthogonal axis, and with the 1st direction X-axis quadrature, and the direction consistent with the Width of base plate for packaging 2.And then more than half direction of the light exit direction Ae light that to be main outgoing send from light-emitting component 3 is surface (bottom surface) vertical direction separately of the bottom 211B of top 21A, groove 21R with respect to base plate for packaging 2.At this, this light exit direction Ae is the direction consistent with the Z axle of orthogonal axis, is the 3rd direction Z.And it is the direction of the scope between the 1st direction X and the light exit direction Ae that above-mentioned light disperses direction Aa, is to the positive direction of disperseing of the Width of base plate for packaging 2.

[structure of base plate for packaging]

As shown in Figure 1 to Figure 3, base plate for packaging 2 has: radiator 21, and it has the 1st groove 211R, and has heat conductivity; And resinite 22, it is installed on this radiator 21, and has the 2nd groove 212R, and has light reflective.Groove 21R is made of the 1st groove 211R and the 2nd groove 212R.

The 1st groove 211R of radiator 21 is incorporating sections of cross section matrix shape, it has the 1st opening 213A on light exit direction Ae (the 3rd direction Z), opposition side at light exit direction Ae has bottom 211B, and has the 1st medial surface 21S that sets along the periphery of the 1st opening 213A and bottom 211B.When radiator 21 has as the function of the pedestal substrate of base plate for packaging 2, has heat that the luminous action by a plurality of light-emitting components 3 that are loaded in bottom 211B is produced from outside, the function that sheds of the back side 21BS opposite particularly with the side of the 1st groove 211R that is equipped with radiator 21.The inner filling of the 1st groove 211R of radiator 21 has the part (the 1st translucent resin 61) of translucent resin 6.

The 1st medial surface 21S of the 1st groove 211R has the function as reflecting surface (reflector), the light that this reflecting surface sends from a plurality of light-emitting components 3 to light exit direction Ae reflection, mainly is the light that sends along bottom 211B.In embodiment 1, radiator 21 for example uses the sheet material that is made of the good copper of heat conductivity (Cu) alloy material as parent, and its surface is formed with Ag plating, Pb plating or Rh plating.And, though not necessarily be defined in this numerical value, but the size L1 of the long side direction (the 1st direction X) of the base plate for packaging 2 of the semiconductor light-emitting apparatus 1 of embodiment 1 for example is set at 13.2mm to 13.4mm, the size L2 of short side direction (the 2nd direction Y) for example is set at 5.2mm to 5.4mm, the size L3 of thickness direction (the 3rd direction Z) for example is set at 2.4mm to 2.6mm.

At the size of this base plate for packaging 2, the size L4 of the 1st direction X of radiator 21 for example is set at 11.3mm to 11.5mm, the size L5 of the 2nd direction Y for example is set at 4.2mm to 4.4mm, the size L6 of the 3rd direction Z for example is set at 1.4mm to 1.6mm.And then, the size L7 of the 2nd direction Y (Width) of the bottom 211B of the 1st groove 211R for example is set at 0.6mm to 1.0mm, the size L8 of the 2nd direction Y (Width) of the 1st opening 213A for example is set at 1.4mm to 1.8mm, the size L9 of the 3rd direction Z (depth direction) of the 1st groove 211R for example is set at 0.3mm to 1.0mm.

In embodiment 1, resinite 22 is ejection formation on radiator 21, and it is one-body molded that the back side 21BS of radiator 21 is exposed with the side periphery of radiator 21, and penetrates direction Ae with this state along light and form thickness.The 2nd groove 212R of resinite 22 is incorporating sections of cross section matrix shape, and on light exit direction Ae, has the 2nd opening 213B, opposition side at light exit direction Ae has bottom (bottom surface) 212B, and has the 2nd medial surface 22S that sets along the periphery of the 2nd opening 213B and bottom 212B.The bottom 212B of the 2nd groove 212R is connected with the 1st opening 213A of the 1st groove 211R.The bottom 212B of the 2nd groove 212R and the planar dimension of the 2nd opening 213B are set at bigger than the planar dimension of the bottom 211B of the 1st groove 211R and the 1st opening 213A.

Resinite 22 is also brought into play function as the partition wall that is used for other parts (the 2nd translucent resin 62) of filling translucent resin 6 in the outer shape that constitutes base plate for packaging 2.The light that the 2nd medial surface 22S of the 2nd groove 212R will send from a plurality of light-emitting components 3, to the direction reflection that intersects with light exit direction Ae, and has a function as light diffusingsurface (reflector), this light diffusingsurface spreads light between the 2nd relative medial surface 22S, and the light of different glow colors is mixed.In embodiment 1, for example can practicably use the good nylon that is called white resin of light reflex on resinite 22 is resin, particularly polyamide.

The size L10 of the 2nd direction Y (short side direction or Width) of bottom 212B that is provided in the 2nd groove 212R of resinite 22 for example is set at 3.9mm to 4.3mm, the size L11 of the 2nd direction Y (short side direction or Width) of the 2nd opening 213B for example is set at 4.2mm to 4.4mm, and the size L12 of the 3rd direction Z (depth direction) of the 2nd groove 212R for example is set at 0.9mm to 1.1mm.The size L12 of the 2nd groove 212R is set at darker than the unidirectional size L9 of the 1st groove 211R.In embodiment 1, because translucent resin 6 has 2 layers of structure that are filled in the 1st translucent resin 61 in the 1st groove 211R and are filled in the 2nd translucent resin 62 of the 2nd groove 212R, the thickness that therefore is filled in the 2nd translucent resin 62 of the 2nd groove 212R is set thicklyer than the thickness of the 1st translucent resin 61 that is filled in the 1st groove 211R.In other words, the optical path length of the film thickness direction of the 2nd translucent resin 62 (rayed direction Ae) is set longlyer than the optical path length of the film Fang Houxiang of the 1st translucent resin 61.

In radiator 21, for as above-mentioned reflecting surface bring into play function, the 1st medial surface (reflecting surface) 21S of the 1st groove 211R be set in respect to the 1st interior angle 1 of bottom 211B surpass 90 degree and in the scope at the obtuse angle of less than 180 degree.In embodiment 1, the 1st interior angle 1 for example is set at 130 degree to 150 degree.In resinite 22, for as above-mentioned light diffusingsurface bring into play function, the 2nd medial surface (light diffusingsurface) 22S of the 2nd groove 212R is set in the angle littler than the 1st interior angle 1, is in the scope at obtuse angle in detail with respect to the 2nd interior angle 2 of bottom 212B.In embodiment 1, the 2nd interior angle 2 for example is set in 90 degree to 110 degree.

[structure of light-emitting component]

In embodiment 1, a plurality of light-emitting components 3 have blue light emitting device (blue LED) 3B that sends blue light, send red light-emitting component (red light emitting diodes) 3R as the red light of the different glow color of the blue light that sends with this blue light emitting device 3B.Blue light emitting device 3B sends the blue light with about 450nm to 490nm wavelength.This blue light emitting device 3B for example is the semiconductor chip that has formed the InGaN based semiconductor on sapphire substrate or silicon substrate.Red light-emitting component 3R sends the red light with about 620nm to 780nm wavelength.This red light-emitting component 3R is for example at the semiconductor chip that has formed the AlGaInP based semiconductor on the AIN substrate or on the sapphire substrate.

It is the flat shape of the square or rectangular of 0.2mm to 0.6mm that these semiconductor chips for example have length on one side.And as shown in Figure 1 to Figure 3, blue light emitting device 3B, red light-emitting component 3R be for example with the arrangement pitch of 1.2mm to 1.3mm, be loaded on the bottom 211B of the 1st groove 211R of radiator 21, and to transversely arranged one-tenth one row of the 1st direction X.In embodiment 1, in Fig. 1 from upper left inboard in front of the bottom right, in Fig. 3 from the left side to the right, be arranged with 2 blue light emitting device 3B, 1 red light-emitting component 3R, 2 blue light emitting device 3B, 1 red light-emitting component 3R, 2 blue light emitting device 3B, promptly be arranged with 6 blue light emitting device 3B and 2 red light-emitting component 3R, add up to 8 light-emitting components.Though pattern of rows and columns not necessarily limits, in embodiment 1, repeat to set 1 red light-emitting component 3R among each blue light emitting device 3B of a plurality of (2).In addition, though the semiconductor light-emitting apparatus 1 of embodiment 1 possesses 8 light-emitting components 3, be not limited thereto.

[structure of translucent resin]

As shown in Figures 1 and 2; when the 1st translucent resin 61 that is filled in the 1st groove 211R of translucent resin 6 covers a plurality of light-emitting components 3 and protects a plurality of light-emitting components 3 not to be subjected to external environment influence; comprise the part of the blue light that main absorption sends from blue light emitting device 3B, and be transformed to the fluorophor (not shown) of the light of other wavelength.Forms owing to the 1st translucent resin 61 utilizes drip coating resin material and sclerosis of perfusion, so in embodiment 1, till the edge of the 1st opening 213A of the 1st groove 211R, utilize presclerotic surface tension to realize.

In embodiment 1, in the 1st translucent resin 61, for example use silicones.And using silicate in the fluorophor that adds in silicones is fluorophor, and this silicate is that fluorophor for example can absorb the part of blue light, and sends the sodium yellow of the wavelength with about 580nm to 600nm that becomes complementary colour system.The fluorophor preference is contained in the 1st translucent resin 61 as the ratio with 5 weight % to 40 weight %.And can use YAG in fluorophor is that fluorophor, TAG are fluorophor etc.At this, become only can mixing of complementary colour system and be transformed to the coloured light of the coloured light of white color system with single or multiple coloured light.

Being filled in the 2nd translucent resin 62 of the 2nd groove 212R of translucent resin 6, mainly is sodium yellow the using to the light path of collector lens 8 from the 1st translucent resin 61 separately of part conversion by the 1st translucent resin 61 of the red light sent as the blue light that sends from blue light emitting device 3B, from red light-emitting component 3R, blue light.In embodiment 1, the 2nd translucent resin 62 for suppress diffusion in this light path or scattering as far as possible and by collector lens 8 expeditiously with optical convergence at light exit direction Ae, do not contain fluorophor and diffusion material.

Same with the 1st translucent resin 61, owing to the 2nd translucent resin 62 utilize perfusion drip the coating resin material and the sclerosis form, therefore in embodiment 1, the edge to the 2nd opening 213B of the 2nd groove 212R utilizes presclerotic surface tension to realize.

[structure of lead-in wire and line]

Be equipped with lead-in wire 4 in the resinite 22 of base plate for packaging 2, one distolateral (inner lead) of this lead-in wire 4 is provided on the bottom 212B of the 2nd groove 212R, another distolateral (outside lead) outstanding outside that is molded over resinite 22.The one distolateral line 5 that passes through of lead-in wire 4 is electrically connected with the anode electrode (not shown) or the cathode electrode (not shown) of a plurality of light-emitting components 3.Another distolateral wing shape of gull that is shaped to of lead-in wire 4 in embodiment 1.In addition, the shape of lead-in wire 4 also can be pin insert type or surface installation type.

Lead-in wire 4 for example is to use the sheet material of Cu alloy material to constitute.Wetability when installing in order to improve scolding tin in distolateral and a junction that another is distolateral of lead-in wire 4, sets the Ag plated film at least.For example use Au line, Pb line or Rh line in the line 5.Line 5 is to use hot pressing anode electrode or cathode electrode that method comes electrically and mechanically to be connected a plurality of light-emitting components 3.

[structure of collector lens]

As shown in Figures 1 to 4, the main lens zone 81 of collector lens 8 is made of semi-cylindrical form, this semi-cylindrical form be will send from a plurality of light-emitting components 3 and finally the light of the 2nd opening 213B by the 2nd groove 212R converge to the convex lens shape of light exit direction Ae at the 2nd direction Y, and on the 1st direction X, keep certain shape.Though the numerical value of the size of base plate for packaging 2 can change according to the variation of range of exposures among the light exit direction Ae etc., but in embodiment 1, main lens zone 81 has along the axle center shape that positive cylinder roughly is divided into half, and the radius of curvature R 1 of the caustic surface in main lens zone 81 for example is set at 2.6mm to 2.7mm.In addition, in embodiment 1,, also can be ellipsoid, curved surface, the polyhedron as polygonal mirror with the face combination of a plurality of radius of curvature though the caustic surface in main lens zone 81 just is set to circle or approaching therewith shape.In a word, as long as possess the optical convergence that to send from light-emitting component 3 function to light exit direction Ae.

The secondary lens area 82 of collector lens 8 has following function, promptly in the end and the other end of the 1st direction X of the 2nd groove 212R of base plate for packaging 2, make the part of the light that sends from light-emitting component 3 disperse direction Aa refraction, make light disperse (outgoing) to the short side direction of base plate for packaging 2 energetically to light.As shown in Figure 4, will be set in the scope of acute angle to the internal angle beta 1 that the 1st direction X reflects between the bottom surface 83 of the 2nd opening 213B (or the 1st opening 213A) side of the plane of refraction 82RS of light of secondary lens area 82 and secondary lens area 82.For the concrete numerical value of this internal angle beta 1 with aftermentioned.And then as shown in Figure 3, the plane of refraction 82RS of secondary lens area 82 is provided in the zone of repeating with the 2nd opening 213B of the 2nd groove 212R in embodiment 1.By being provided in the zone that both sides repeat, can be originally to the part of the light of light exit direction Ae outgoing, be distributed to light dispersion direction Aa by the 2nd opening 213R from light-emitting component 3.

And, in collector lens 8, be equipped with the 1st location division 85A and the 2nd location division 85B, it is provided in the edge part along the 1st direction X extension in main lens zone 81 respectively, to positioning to the 1st direction X extension and relative the 1st side and the 2nd side of base plate for packaging 2.The 1st location division 85A and the 2nd location division 85B 21A above the long side of base plate for packaging 2 abuts to the part of side or has the clearance of appropriateness and cooperate, and carry out the location of collector lens 8 with respect to base plate for packaging 2, have collector lens 8 is installed to function on the base plate for packaging 2.Though collector lens 8 also can use binding agent to be installed in base plate for packaging 2 using the 1st location division 85A and the 2nd location division 85B to come can be directly installed on the base plate for packaging 2 under the situation of the side of clamping base plate for packaging 2 moderately.

Collector lens 8 is for example by having photopermeability, and any one resin in cheap and the allyl resin that making property is good, silicones, polyurethane resin constitutes.In embodiment 1, though collector lens 8 has used transparent material, be not limited thereto, for example also can be coloured to yellow etc. according to purposes.

(A) the light orientation characteristic of collector lens

The orientation characteristic of this collector lens 8 is as follows.Fig. 5 (A) be embodiment 1 installation the semiconductor light-emitting apparatus 1 of collector lens 8.Fig. 5 (B) is the 1st comparative example, and Fig. 5 (C) is the 2nd comparative example.The 1st comparative example is the semiconductor light-emitting apparatus 1B that collector lens is not installed.The 2nd comparative example is the semiconductor light-emitting apparatus 1C that the collector lens 8C with semi-cylindrical form has been installed, and wherein this collector lens 8C only has the zone in the main lens zone 81 of the collector lens 8 that is equivalent to embodiment 1.

Fig. 6 be semiconductor light-emitting apparatus 1B that semiconductor light-emitting apparatus the 1, the 1st comparative example of embodiment 1 is shown, the 2nd comparative example semiconductor light-emitting apparatus 1C separately in, the 1st direction X is the light orientation characteristic of the long side direction of base plate for packaging 2.Among Fig. 6, transverse axis is that light shooting angle (degree), the longitudinal axis are relative light intensities.The light orientation characteristic of the semiconductor light-emitting apparatus 1 of the embodiment 1 shown in data (A) presentation graphs 5 (A).The light orientation characteristic of the semiconductor light-emitting apparatus 1B of the 1st comparative example shown in data (B) presentation graphs 5 (B).The light orientation characteristic of the semiconductor light-emitting apparatus 1C of the 2nd comparative example shown in data (C) presentation graphs 5 (C).

The light orientation characteristic of the semiconductor light-emitting apparatus 1B of the 1st comparative example is shown in data (B).The light shooting angle is near 0 degree, promptly in light exit direction Ae (or the 3rd direction Z), with respect to the relative light intensity maximum of the vertical direction of the bottom 211B of the top 21A of base plate for packaging 2 or the 1st groove 211R.The light shooting angle is ± 90 degree, promptly disperses among the direction Aa (the 1st direction X) at light, and on the same plane of 21A, the relative light intensity of the short brink of base plate for packaging 2 is unlimited near zero, can not disperse to take out light on the direction Aa at light on base plate for packaging 2.

The light orientation characteristic of the semiconductor light-emitting apparatus 1C of the 2nd comparative example is shown in data (C).By possessing collector lens 8C, the light shooting angle be 0 degree near the wide scope ± 70 degree, relative light intensity is than the situation of the 1st comparative example, is raised on the whole and improves.Near the light shooting angle was ± 90 degree, though be estimated as about 1% to 2% by the light leakage of collector lens 8C, relative light intensity was unlimited near zero, in fact can not disperse to take out light on the direction Aa at light.

With respect to the 1st comparative example, the 2nd comparative example separately, the light orientation characteristic of the semiconductor light-emitting apparatus 1 of embodiment 1 is shown in data (A).Possess collector lens 8, and the main lens zone 81 by collector lens 8, near the light shooting angle was 0 degree, relative light intensity was than the further lifting and improving of the situation of the 2nd comparative example.In near till the light shooting angle is ± 20 degree-± 70 degree the scope, though relative light intensity reduces than the situation of the 2nd comparative example, the situation that compares the 1st comparative example has had raising.And, near the light shooting angle is ± 90 degree, will disperses direction Aa refraction to light from the light that light-emitting component 3 sends by the secondary lens area 82 of collector lens 8, and can disperse to realize on the direction Aa taking-up of light at this light.Relative light intensity in this zone reaches about 5% to 8%.

Fig. 7 represent semiconductor light-emitting apparatus the 1, the 1st comparative example of embodiment 1 semiconductor light-emitting apparatus 1B, the 2nd comparative example semiconductor light-emitting apparatus 1C separately in, at the 2nd direction Y, be the light orientation characteristic of the short side direction of base plate for packaging 2.Same with Fig. 6, transverse axis is that light shooting angle (degree), the longitudinal axis are relative light intensities among Fig. 7.With above-mentioned same, the light orientation characteristic of the semiconductor light-emitting apparatus 1 of the embodiment 1 shown in data (A) presentation graphs 5 (A).The light orientation characteristic of the semiconductor light-emitting apparatus 1B of the 1st comparative example shown in data (B) presentation graphs 5 (B).The light orientation characteristic of the semiconductor light-emitting apparatus 1C of the 2nd comparative example shown in data (C) presentation graphs 5 (C).

The light orientation characteristic of the semiconductor light-emitting apparatus 1B of the 1st comparative example is shown in data (B).Near the relative light intensity that is light exit direction Ae the light shooting angle is 0 degree is the highest.At the light shooting angle is that ± 90 degree are on the 2nd direction Y, and on the same plane of 21A, the relative light intensity of the long side of base plate for packaging 2 is unlimited near zero on base plate for packaging 2.

The light orientation characteristic of the semiconductor light-emitting apparatus 1C of the 2nd comparative example is shown in data (C).By possessing collector lens 8C, at the light shooting angle is that ± 25 degree are near the scope ± 90 degree, though relative light intensity reduces than the situation of the 1st comparative example, but the light shooting angle be 0 degree near the scope ± 25 degree, relative light intensity is raised on the whole and improves than the situation of the 1st comparative example.At the light shooting angle is near ± 90, estimates that it is about 3% to 4% that light by collector lens 8C leaks.

The light orientation characteristic of the semiconductor light-emitting apparatus 1 of embodiment 1 is shown in data (A).Because the main lens zone 81 of laser lens 8 has the same shape of collector lens 8C with the 2nd comparative example 2, therefore present the tendency same with the relative light intensity of the 2nd comparative example by main lens zone 81 relative light intensities.And relative light intensity is higher than the relative light intensity of the 2nd comparative example.

(B) ratio of the secondary lens area of collector lens

Then, the proper proportion of secondary lens area 82 is as follows in collector lens 8.Fig. 8 represent embodiment 1 installation the semiconductor light-emitting apparatus 1 of collector lens 8.As the collector lens 8 of sample production will be from the bottom surface thickness t of the extreme higher position of 83 light exit direction Ae (the 3rd direction Z) to main lens zone 81 be set at 2.5mm, and generate to make and be clipped to 0.6mm, the 1.3mm on the 1st direction X, certain plane of refraction (clinoplain) 82RS of angle of 2.0mm position from an end and other end branch.Certain angle is that the internal angle beta 1 between plane of refraction 82S and the bottom surface 83, internal angle beta 1 are set to 45 degree herein.Position from an end and the other end to 0.6mm makes under the situation of plane of refraction 82RS, and secondary lens area 82 surpasses 20% (about 24%) with respect to the ratio of the thickness t of collector lens 8.Similarly, making to position, 1.3mm place under the situation of plane of refraction 82RS, the ratio of secondary lens area 82 surpasses 50% (about 52%), is making under the situation of plane of refraction 82RS to position, 2.0mm place, and the ratio of secondary lens area 82 becomes 80% (80%).

Fig. 9 illustrates the relation between the light orientation characteristic of the ratio of the secondary lens area 82 of collector lens 8 in the semiconductor light-emitting apparatus 1 of embodiment 1 and the 1st direction X.In addition, in Fig. 9, put down in writing the light orientation characteristic (data (C)) of the semiconductor light-emitting apparatus 1C of the light orientation characteristic (data (B)) of the semiconductor light-emitting apparatus 1B of above-mentioned the 1st comparative example and the 2nd comparative example simultaneously.Transverse axis is that light shooting angle (degree), the longitudinal axis are relative light intensities among Fig. 9.The ratio of the secondary lens area 82 that data (A1) expression is shown in Figure 8 surpasses 20% o'clock light orientation characteristic.The ratio of data (A2) vice lens area 82 surpasses 50% o'clock light orientation characteristic, and the ratio of data (A3) vice lens area 82 surpasses 80% o'clock light orientation characteristic.

Shown in data (A1), the light shooting angle be 0 the degree to ± 70 the degree near wide region in, can keep the almost indeclinable smooth orientation characteristic of relative light intensity.And, near the light shooting angle is ± 90 degree, only be made as more than 20% by secondary lens area 82 with collector lens 8, make the light that sends from light-emitting component 3 disperse direction Aa refraction, and can be implemented in the taking-up that this light disperses the light on the direction Aa to light.

And then, shown in data (A2) and data (A3), the light shooting angle be 0 the degree to ± 70 the degree near wide region in, can keep the almost indeclinable smooth orientation characteristic of relative light intensity equally.And near the light shooting angle was ± 90 degree, the ratio of the secondary lens area 82 by increasing collector lens 8 can increase the taking-up amount that this light disperses the light among direction Aa.Promptly, in collector lens 8, by plane of refraction 82RS is set in more than 20% with respect to the ratio of the thickness t of

secondary lens area

82 and 100% following scope in, can fully guarantee the light quantity on the light exit direction Ae in main lens zone 81, and then can guarantee that also light disperses the suitable light quantity on the direction Aa.At the 1st comparative example or the 2nd comparative example, in the semiconductor light-emitting apparatus 1 of embodiment 1, light can be disperseed the light quantity among the direction Aa to be increased to the most about 10 times.

(C) angle of the plane of refraction of the secondary lens area of collector lens

Then, the suitable angle of the plane of refraction 82RS of secondary lens area 82 (internal angle beta 1) is as follows in collector lens 8.Figure 10 illustrate embodiment 1 installation the semiconductor light-emitting apparatus 1 of collector lens 8.Collector lens 8 as sample production, same with the collector lens 8 of semiconductor light-emitting apparatus 1 shown in Figure 8, the thickness t of the extreme higher position on will the light exit direction Ae from bottom surface 83 to main lens zone 81 is set at 2.5mm, and changes from an end and other end branch and be clipped to the angle of 1.0mm, 2.0mm on the 1st direction X, 3.0mm position and made plane of refraction (clinoplain) 82RS.When the position from an end and the other end to 1.0mm had made plane of refraction 82RS, the angle of this plane of refraction 82RS (internal angle beta 11) became about 68 degree.Similarly, when the position to the 2.0mm place has made plane of refraction 82RS, the angle of this plane of refraction 82RS (internal angle beta 12) becomes about 51 degree, and when having made plane of refraction 82RS in the position to the 3.0mm place, the angle of this plane of refraction 82RS (internal angle beta 13) becomes about 39 degree.

The angle that Figure 11 shows the plane of refraction 82RS of secondary lens area 82 in the semiconductor light-emitting apparatus 1 of embodiment 1 change and the light orientation characteristic of the 1st direction X between relation.In addition, put down in writing the light orientation characteristic (data (C)) of the semiconductor light-emitting apparatus 1C of the light orientation characteristic (data (B)) of the semiconductor light-emitting apparatus 1B of the 1st above-mentioned comparative example and the 2nd comparative example among Figure 11 simultaneously.Transverse axis is that light shooting angle (degree), the longitudinal axis are relative light intensities among Figure 11.The angle of the plane of refraction 82RS of the secondary lens area 82 that data (A4) expressions is shown in Figure 11 is about 68 light orientation characteristics when spending.The angle of data (A5) expressions plane of refraction 82RS is about 51 light orientation characteristics when spending, and the angle of data (A3) expression plane of refraction 82RS is about 39 light orientation characteristics when spending.

Shown in data (A4), the light shooting angle be 0 the degree to ± 70 the degree near wide region in, can keep the almost indeclinable smooth orientation characteristic of relative light intensity.And, near the light shooting angle is ± 90 degree, by in the plane of refraction 82RS of the secondary lens area 82 of collector lens 8, setting internal angle beta 1 several angles of inclination in the acute angle scope, make the light that sends from light-emitting component 3 disperse direction Aa refraction, and the light that can be implemented among this light dispersion direction Aa take out to light.In this plane of refraction 82RS,, estimate to have higher light orientation characteristic than the relative light intensity of the semiconductor light-emitting apparatus 1C of the semiconductor light-emitting apparatus 1B of the 1st comparative example and the 2nd comparative example though relative light intensity is about 2% to 3%.

And then, shown in data (A5) and data (A6), the light shooting angle be 0 the degree to ± 70 the degree near wide region in, can keep the almost indeclinable smooth orientation characteristic of relative light intensity equally.And near the light shooting angle was ± 90 degree, the angle of the plane of refraction 82RS by reducing secondary lens area 82 though the relative light intensity on the light exit direction Ae can reduce, can increase the taking-up amount that light disperses the light on the direction Aa.Promptly, in collector lens 8, if the angle (internal angle beta 1) of the plane of refraction 82RS of secondary lens area 82 is diminished, then can disperse to take out effectively on the direction Ae light that sends from light-emitting component 3 at light.Disperse to take out suitable light on the direction Ae at light for the relative light intensity that does not lose light exit direction Ae, in the semiconductor light-emitting apparatus 1 of embodiment 1, the internal angle beta 1 of the plane of refraction 82RS of secondary lens area 82 is set in 30 degree to the scopes of 80 degree.

[feature of semiconductor light-emitting apparatus]

As mentioned above, in the semiconductor light-emitting apparatus 1 of embodiment 1, have main lens zone 81 and secondary lens area 82, and owing on this pair lens area 82, possess collector lens 8, this collector lens 8 has the plane of refraction 82RS that disperses to take out on the direction Ae light that sends from light-emitting component 3 at light, therefore the convergent while that can improve the light that sends to light exit direction Ae, can improve luminosity on every side to the light that sends of light exit direction Ae.

And, in semiconductor light-emitting apparatus 1, because the secondary lens area 82 of collector lens 8 ratio with respect to the thickness t of collector lens 8 is set in more than 20%, therefore the convergent while that can improve the light that sends to light exit direction Ae, can improve luminosity on every side to the light that sends of light exit direction Aa.

And then, in semiconductor light-emitting apparatus 1, since with the angle initialization of the plane of refraction 82RS of the secondary lens area 82 of collector lens 8 in the acute angle scope, therefore the convergent while that can improve the light that sends to light exit direction Ae, can improve luminosity on every side to the light that sends of light exit direction Ae.

[structure of semiconductor light emitting module]

As shown in figure 12, the semiconductor light emitting module 10 of embodiment 1 has a plurality of semiconductor light-emitting apparatus 1 (with reference to above-mentioned Fig. 1 to Fig. 4) of the above embodiments 1 and arrange and install the installation base plate 101 of this semiconductor light-emitting apparatus 1 across certain intervals on the 2nd direction Y.The installation base plate 101 of this semiconductor light emitting module 10 has rectangular flat shape, it might not be limited to following numerical value, that is, the width dimensions W101 of the 1st direction X for example is set at 30mm to 35mm, the length L 101 of the 2nd direction Y for example is set at 200mm to 300mm.Can practicably use at epoxy on installation base plate 101 is the printed wiring board that has the distribution of Cu etc. on the resin substrate.

Semiconductor light-emitting apparatus 1 makes the long side direction (the 1st direction X) of this base plate for packaging 2 consistent with the Width (the 1st direction X) of installation base plate 101, make the short side direction (the 2nd direction Y) of base plate for packaging 2 consistent, for example with the certain intervals about 15mm to 25mm, arrange 12 altogether at this with the length direction (the 2nd direction Y) of installation base plate 101.The arrangement number of semiconductor light-emitting apparatus 1 is not limited to this number.For example, semiconductor light-emitting apparatus 1 also can be arranged more than 2 on the 2nd direction Y and be less than 12 or the number above 12, is perhaps arranging on the 1st direction X more than 2 row under the state of the number of permutations of keeping the 2nd direction Y.And then, though semiconductor light-emitting apparatus 1 on lip-deep the 2nd direction Y of installation base plate 1, arrange in line, also can be to the 2nd direction Y, according to per 1 or every a plurality of tortuous arrangement.

Be equipped with the power supply linkage unit 110 that is used to connect semiconductor light emitting module 10 and power supply (being source power supply, for example 100V herein) 200 in the installation base plate 101 of embodiment 1.Though do not specify the structure that it is detailed for this power supply linkage unit 110, have the function that power supply 200 is transformed to the level that in semiconductor light emitting module 10, to operate.In addition, in embodiment 1, though also contain the socket or cable distribution or the connector before that connect semiconductor module 10 and power supply 200 in this power supply linkage unit 110, but under the situation of lighting device housing 150 sides that are provided in lighting device 15 described later, there is no need to be provided on the semiconductor light emitting module 10.

And,, diode or resistance that the electric current from 110 outputs of power supply linkage unit is carried out use rectification or level translation etc. can be installed though on the installation base plate 101 of the semiconductor light emitting module 10 of embodiment 1, do not enclose symbol especially.

As mentioned above, in the semiconductor light emitting module 10 of embodiment 1, owing to, a plurality of semiconductor light-emitting apparatus 1 can be organized to go into to lighting device 15 described later simply as the completed knocked down products that a plurality of semiconductor light-emitting apparatus 1 are installed on installation base plate 101.Therefore, can improve the productivity of lighting device 15.

[structure of lighting device]

As shown in figure 13, the lighting device 15 of embodiment 1 has: lighting device housing 150, it is equipped with the semiconductor light emitting module 10 of above-mentioned embodiment shown in Figure 12 1, and has illumination that light that the collector lens 8 that makes the semiconductor light-emitting apparatus 1 by semiconductor light emitting module 10 sends passes through to light exit direction Ae with opening 151; Euphotic cover 152, it blocks illumination opening 151; And the power supply linkage unit, it is used to connect semiconductor light emitting module 10 and power supply 200.

The lighting device 15 of embodiment 1 for example uses as the street lamp on illuminating road or pavement.In addition, lighting device 15 is not limited to street lamp, and the lighting apparatus that also can be used as family or office etc. uses.

The lighting device housing 150 of lighting device 15 constitutes the shape that the side of the cylindroid part of hollow is dug through with opening 151 as illumination, and takes in and be equipped with semiconductor light emitting module 10 in the inside of this lighting device housing 150.Be installed in semiconductor light-emitting apparatus 1 on the installation base plate 101 of semiconductor light emitting module 10 and be provided in illumination with opening 151 sides, and the light that sends from semiconductor light-emitting apparatus 1 is to light exit direction Ae outgoing.At this, there are road or pavement among this light exit direction Ae.Lighting device housing 150 for example is made of metal of plastics, aluminium etc. etc.

Euphotic cover 152 is to be installed on the lighting device housing 150 to block the mode of throwing light on opening 151.This transparency cover 152 is the photopermeability materials that suitably are colored as required by water white transparency or yellow etc., and for example plastics or glass constitute.When transparency cover 152 makes the illumination of sending from semiconductor light-emitting apparatus 1 be mapped to road or pavement, has the function that protection semiconductor light-emitting apparatus 1 and semiconductor light emitting module 10 are not subjected to the external environment influence of rain or wind etc.In addition, for euphotic cover 152, can set with in painted, reflection, the diffusion etc. any one in the outside in the inner face of the private side of lighting device housing 150 or the outside is the coating material of purpose, or also can pay to be spread etc. and be the lens function of purpose.

As Figure 14 and shown in Figure 15, the lighting device 15 of embodiment 1 supports and is installed on the pillar 16 that is provided with in road or the pavement 17.Herein, symbol H is from the road of lighting device 15 or the setting height(from bottom) on pavement 17.Symbol δ is the setting angle (elevation angle) of lighting device 15 with respect to road or pavement 17 (horizontal plane).

Figure 16 illustrates the Illumination Distribution of the lighting device 1 of embodiment 1.Transverse axis is the distance (m) of the 1st direction X, the distance (m) that the longitudinal axis is the 2nd direction Y among Figure 16.Herein, the 1st direction X is the consistent direction of bearing of trend with road or pavement 17, and the 2nd direction Y is the direction with the bearing of trend quadrature on road or pavement 17.And the lighting device 1 that uses in the mensuration of Illumination Distribution has the output of 108W, and setting height(from bottom) H is set at 8.5m, and setting angle δ is set at 0 degree.

In lighting device 15, owing to the long side direction of the base plate for packaging 2 that makes the semiconductor light-emitting apparatus 1 that is installed in semiconductor light emitting module 10 is consistent with the 1st direction X, and the main lens zone 81 of the collector lens 8 by semiconductor light-emitting apparatus 1 is understood coalescence to the light that sends from light-emitting component 3 and is dwindled, and therefore can obtain high Illumination Distribution in the close limit of the Width (the 2nd direction Y) on road or pavement 17.Promptly, can shine road or pavement 17 brightly with higher illumination by lighting device 15.And, in lighting device 15, owing on the collector lens 8 of semiconductor light-emitting apparatus 1, set secondary lens area 82, therefore in the very wide scope of the bearing of trend (the 1st direction X) on road or pavement 17, can not produce dazzle to the driver in driving, moderately irradiating illumination device 15 around, and can access Illumination Distribution to the suitable light quantity of anticrime measure.Promptly, can around road or pavement 17, disperse suitable light quantity by lighting device 15, and shine with appropriate brightness.

As mentioned above, in embodiment 1, road or pavement 17 are had sufficient brightness, and have the brightness of appropriateness around, thereby can provide the suitable lighting device 15 of anticrime measure.

(embodiment 2)

Embodiments of the invention 2 are used to illustrate the variation of collector lens 8 of the semiconductor light-emitting apparatus 1 of the above embodiments 1.

[structure of semiconductor light-emitting apparatus and collector lens]

As shown in figure 17, in the semiconductor light-emitting apparatus 1 of embodiment 2, the plane of refraction 82RS of the secondary lens area 82 of collector lens 8, at the opening 213 of the groove 21R of base plate for packaging 2, in detail at an end and the other end of the 1st direction X of the 2nd opening 213B of the 2nd groove 212R, be provided in the outside of the 1st direction X of the 2nd opening 213B.Promptly, (observe) position of repeating when the plane of refraction 82RS of secondary lens area 82 is not provided in viewed in plan with the 2nd opening 213B from light exit direction Ae or the 3rd direction Z, and be provided in the outside of the 2nd opening 213B.In the semiconductor light-emitting apparatus 1 of embodiment 2, the secondary lens area 82 with collector lens 8 is from the outstanding structure in the side of the short brink of base plate for packaging 2.

In the semiconductor light-emitting apparatus 1C of the 2nd comparative example shown in the data (C) of above-mentioned Fig. 5 (C) and Fig. 6, though adopted the collector lens 8C suitable with the main lens zone 81 of the collector lens 8 of the semiconductor light-emitting apparatus 1 of embodiment 1, the light that produces several % from the end face of the 1st direction X of this collector lens 8C leaks.The semiconductor light-emitting apparatus 1 of embodiment 2 uses secondary lens area 82 to make this light that spills disperse direction Aa refraction to light energetically and effectively, has to light and disperses direction Aa to carry out the function of light diffusion.

Basic structure beyond the above-mentioned explanation of the semiconductor light-emitting apparatus 1 of embodiment 2, the basic structure of base plate for packaging 2, light-emitting component 3, collector lens 8 etc. for example, the basic structure of angle of the ratio of the secondary lens area 82 of collector lens 8 or plane of refraction 82RS etc. particularly is identical with those basic structures of the semiconductor light-emitting apparatus 1 of embodiment 1.And, because the semiconductor light emitting module 10 of semiconductor light-emitting apparatus 1, the basic structure that group has been gone into the lighting device 15 of this semiconductor light emitting module 10 have been installed, identical with the basic structure of the semiconductor light emitting module 10 of the above embodiments 1 and lighting device 15, therefore in this description will be omitted.

[feature of semiconductor light-emitting apparatus]

In the semiconductor light-emitting apparatus 1 of the embodiment 2 that as above constitutes, have main lens zone 81 and secondary lens area 82, and owing on this pair lens area 82, possess collector lens 8, this collector lens 8 has on light exit direction Ae to take out from light-emitting component 3 and sends and the plane of refraction 82RS of the light that goes out from main lens zone 81 side leakages, therefore the convergent while that can improve the light that sends to light exit direction Ae, improve the luminosity that disperses the light that direction Aa sends to light.And then in the semiconductor light-emitting apparatus 1 of embodiment 2, the light that main lens zone 81 side leakages from collector lens 8 can be gone out is as disperse the light of direction Aa outgoing to effectively utilize to light.

(embodiment 3)

Embodiments of the invention 3 are used to illustrate the variation of collector lens 8 of the semiconductor light-emitting apparatus 1 of the above embodiments 2.

[structure of semiconductor light-emitting apparatus and collector lens]

Extremely shown in Figure 20 as Figure 18, in the semiconductor light-emitting apparatus 1 of embodiment 3, the plane of refraction 82RS of the secondary lens area 82 of collector lens 8, at the opening 213 of the groove 21R of base plate for packaging 2, in detail at an end and the other end of the 1st direction X of the 2nd opening 213B of the 2nd groove 212R, be provided in the outside of the 1st direction X of the 2nd opening 213B, and constitute at the 1st direction X (light disperse direction Aa) and go up caustic surface sending from light-emitting component 3 and assembling by the light of the 2nd opening 213B.

Same with the secondary lens area 82 of the collector lens 8 of the semiconductor light-emitting apparatus 1 of the above embodiments 2, when not being provided in viewed in plan, (observes) the plane of refraction 82RS of the secondary lens area 82 of the semiconductor light-emitting apparatus 1 of embodiment 3 position of repeating with the 2nd opening 213B from light exit direction Ae or the 3rd direction Z, and be provided in the outside of the 2nd opening 213B, and have from the outstanding structure in side of the short brink of base plate for packaging 2.The secondary lens area 82 of this collector lens 8 is disperseed to make energetically and effectively on the direction Aa anaclasis that goes out from main lens zone 81 side leakages and is assembled at light, and has to light and disperse direction Aa to carry out the function of light diffusion.

Among the embodiment 3, this pair lens area 82 constitutes convex lens shape, is ball to be cut to 1/4th shape in detail, and to constitute with main lens zone 81 identical materials, one.In addition, it must be curved surface that the caustic surface of secondary lens area 82 there is no need, as long as have the function that the light that spills is assembled, then also can be ellipsoid or polyhedron.

In the collector lens 8 of the semiconductor light-emitting apparatus 1 of embodiment 3, also in main lens zone 81, set the 1st location division 85A and the 2nd location division 85B, the 1st location division 85A and the 2nd location division 85B position to the 1st direction X extension and relative the 1st side and the 2nd side base plate for packaging 2, and on secondary lens area 82, be equipped with the 3rd location division 86A and the 4th location division 86B, the 3rd location division 86A and the 4th location division 86B are provided in the bottom surface of opening 213 sides, and positioning to the 2nd direction Y extension and relative the 3rd side and the 4th side base plate for packaging 2.

The 1st location division 85A and the 2nd location division 85B, same with the 1st location division 85A and the 2nd location division 85B of the collector lens 8 of the semiconductor light-emitting apparatus 1 of embodiment 1,21S abuts to the part of side or has the clearance of appropriateness and cooperate above the long side of base plate for packaging 2, and carry out collector lens 8, and has the function that collector lens 8 is installed to base plate for packaging 2 with respect to the location of base plate for packaging 2 on the 2nd direction Y.The 3rd location division 86A and the 4th location division 86B 21S above the short brink of base plate for packaging 2 abuts to the part of side or has the clearance of appropriateness and cooperate, and carry out collector lens 8, and has the function that collector lens 8 is installed to base plate for packaging 2 with respect to the location of base plate for packaging 2 on the 1st direction X.The 1st location division 85A and the 2nd location division 85B are to constitute with main lens zone 81 identical materials, one, and the 3rd location division 86A and the 4th location division 86B are to constitute with secondary lens area 82 identical materials, one.The 3rd location division 86A and the 4th location division 86B, though might not be limited to this numerical value, having is the flat shape of the essentially rectangular shape about 3.0mm on one side for example, and has for example thickness about 0.2mm to 0.4mm.

In can using the 1st location division 85A and the 2nd location division 85B, the 3rd location division 86A and the 4th location division 86B any one group moderately under the situation of the side of clamping base plate for packaging 2, though can directly collector lens 8 be installed to base plate for packaging 2, also can use binding agent to be installed to base plate for packaging 2.

In addition, even in the collector lens 8 of the semiconductor light-emitting apparatus 1 of the above embodiments 2, also can set the 1st location division 85A, the 2nd location division 85B, the 3rd location division 86A and the 4th location division 86B of collector lens 8 of the semiconductor light-emitting apparatus 1 of embodiment 3.

[feature of semiconductor light-emitting apparatus]

As above in the semiconductor light-emitting apparatus 1 of the embodiment 3 of Gou Chenging, have main lens zone 81 and secondary lens area 82, and owing on this pair lens area 82, possess collector lens 8, this collector lens 8 has and disperses direction Ae to take out from light-emitting component 3 at light to send and the plane of refraction 82RS of the light that goes out from main lens zone 81 side leakages, therefore the convergent while that can improve the light that sends to light exit direction Ae, improve the luminosity that disperses the light that direction Aa sends to light.And then in the semiconductor light-emitting apparatus 1 of embodiment 3, the light that main lens zone 81 side leakages from collector lens 8 can be gone out is as disperse the light of direction Aa outgoing to effectively utilize to light.

(embodiment 4)

Embodiments of the invention 4 are used for illustrating any one the variation of collector lens 8 of semiconductor light-emitting apparatus 1 of the above embodiments 1 to embodiment 3.

[structure of semiconductor light-emitting apparatus and collector lens]

As shown in figure 21, in the semiconductor light-emitting apparatus 1 of embodiment 4, the plane of refraction 81RS in the main lens zone 81 of collector lens 8 also will give prominence to laterally than the side along the 1st direction X (length direction) of base plate for packaging 2 and set.Promptly, the radius of curvature R 1 in the main lens zone 81 of the collector lens 8 of the semiconductor light-emitting apparatus 1 of embodiment 4 is set to, and is bigger than the radius of curvature R 1 in the main lens zone 81 of the collector lens 8 of any one semiconductor light-emitting apparatus 1 among the embodiment 1 to embodiment 3.

In the semiconductor light-emitting apparatus 1 of the above embodiments 1, as use Fig. 7 describes,, on the 2nd direction Y, also produce light and leak by the main lens zone 81 of collector lens 8.The main cause that this light leaks is that reflection or the refraction the bottom surface of collector lens 8 in groove 21R produces according to the light that sends from light-emitting component 3.

In the semiconductor light-emitting apparatus 1 of embodiment 4, the shape of the plane of refraction 81RS in the main lens zone 81 by changing collector lens 8 as mentioned above can make the light of the 2nd such direction Y leak to light exit direction Ae (the 3rd direction Z) refraction and light harvesting.In embodiment 4, the radius of curvature R 1 in main lens zone 81 is set at more than 1.2 times of length L 2 of the 2nd direction Y of base plate for packaging 2, assemble so that can on light exit direction Ae, leak light effectively.

In addition, need not make the radius of curvature R 1 in main lens zone 81 of collector lens 8 certain, the radius of curvature that also can possess the plane of refraction 81RS in 2 above main lens zones 81 makes that can effectively utilize light leaks and reflect expeditiously and assemble to light exit direction Ae.Certainly, collector lens 8 can be a polyhedron.

[feature of semiconductor light-emitting apparatus]

In the semiconductor light-emitting apparatus 1 of the embodiment 4 that as above constitutes, can play and the identical effect of effect that can obtain, and the light that the 2nd direction Y side leakage to the main lens zone 81 of collector lens 8 can be gone out is as disperse the light of direction Aa outgoing to effectively utilize to light according to any one semiconductor light-emitting apparatus 1 among the embodiment 1 to embodiment 3.

(other embodiment)

As mentioned above, though put down in writing the present invention by a plurality of embodiment, the narration and the accompanying drawing that constitute the part of the disclosure do not limit this invention.The present invention can be adapted to various replacement execution modes, embodiment and application technology.For example, in the above-described embodiment, although the clear example that the present invention is adapted to the semiconductor light-emitting apparatus 1 that will amount to 8 light-emitting components, 3 transversely arranged one-tenth one row, but the present invention does not limit therewith, can be adapted to the semiconductor light-emitting apparatus 1 that 8 a plurality of light-emitting components 3 in addition is arranged in multiple row yet.

And then the present invention is not limited to blue light emitting device 3B and these two kinds of light-emitting components of red light-emitting component 3R, and can be adapted to have blue light emitting device 3B, the semiconductor light-emitting apparatus of red light-emitting component 3R and these 3 kinds of light-emitting components of green luminousing element.

And then the present invention can be adapted to semiconductor light-emitting apparatus, semiconductor light emitting module and the lighting device of the light-emitting component that has carried semiconductor laser, organic electroluminescent device etc.

The present invention can be adapted to widely, improves the convergent while of the light that sends to the light exit direction, can improve semiconductor light-emitting apparatus, semiconductor light emitting module and the lighting device of the luminosity of the light that sends around the light exit direction.

Claims

1. semiconductor light-emitting apparatus is characterized in that having:

Base plate for packaging, it has the groove that has constituted opening, and the size of the 2nd direction that the size ratio and described the 1st direction of the 1st direction of this opening intersected is long;

Light-emitting component, its bottom at described groove is equipped with a plurality of on described the 1st direction;

Translucent resin, its inside at described groove covers described light-emitting component and sets; And

Collector lens, it is on described the 2nd direction, will from described light-emitting component send and optical convergence by described opening on the light exit direction, and have the ratio that on described the 1st direction, will assemble and keep certain main lens zone, and have at an end of described the 1st direction and the other end and to make the light that sends from described light-emitting component secondary lens area to described the 1st direction refraction.

2. semiconductor light-emitting apparatus according to claim 1 is characterized in that,

In described collector lens, the interior angle of described light between the bottom surface of the described open side of the plane of refraction of described the 1st direction refraction and described secondary lens area that make of described secondary lens area is set in the acute angle scope.

3. semiconductor light-emitting apparatus according to claim 2 is characterized in that,

In described collector lens, the described plane of refraction of described secondary lens area and the interior angle between the described bottom surface are set at 30 degree to the scope of 80 degree.

4. according to claim 2 or 3 described semiconductor light-emitting apparatus, it is characterized in that,

In described collector lens, the described plane of refraction of described secondary lens area is set more than 20% of thickness for the described smooth exit direction in described main lens zone.

5. according to each the described semiconductor light-emitting apparatus in the claim 1 to 4, it is characterized in that,

In described collector lens, the described plane of refraction of described secondary lens area is provided in the zone end of described the 1st direction of described opening and the other end, that repeat with this opening.

6. according to each the described semiconductor light-emitting apparatus in the claim 1 to 4, it is characterized in that,

In described collector lens, the described plane of refraction of described secondary lens area is provided in the end of described the 1st direction of described opening and the outside of described the 1st direction other end, this opening.

7. semiconductor light-emitting apparatus according to claim 6 is characterized in that,

In described collector lens, the described plane of refraction of described secondary lens area is provided in the end of described the 1st direction of described opening and the outside of described the 1st direction other end, this opening, and this plane of refraction is the caustic surface that will send from described light-emitting component and assemble to described the 1st direction by the light of described opening.

8. semiconductor light-emitting apparatus according to claim 7 is characterized in that,

Described collector lens has:

Described main lens zone with semi-cylindrical form; And the described secondary lens area with convex lens shape that becomes described caustic surface at an end and the other end of described the 1st direction respectively,

Described collector lens also has:

The 1st location division and the 2nd location division, it is provided in the edge part that extends along described the 1st direction in described main lens zone respectively, to described base plate for packaging on described the 1st direction, extend and relative the 1st side and the 2nd side positions; And the 3rd location division and the 4th location division, it is provided in the bottom surface of the described open side of described secondary lens area respectively, to described base plate for packaging on described the 2nd direction, extend and relative the 3rd side and the 4th side positions.

9. a semiconductor light emitting module is characterized in that, this semiconductor light emitting module has:

A plurality of semiconductor light-emitting apparatus, it has: base plate for packaging, it has the groove that has constituted opening, and the size of the 2nd direction that the size ratio and described the 1st direction of the 1st direction of this opening intersected is long; Light-emitting component, its bottom at described groove is equipped with a plurality of on described the 1st direction; Translucent resin, its inside at described groove covers described light-emitting component and sets; And collector lens, it is on described the 2nd direction, will from described light-emitting component send and optical convergence by described opening to the light exit direction, and have the ratio that on described the 1st direction, will assemble and keep certain main lens zone, and have at an end of described the 1st direction and the other end and to make the light that sends from described light-emitting component secondary lens area to described the 1st direction refraction; And

Installation base plate, it arranges and installs described semiconductor light-emitting apparatus across certain intervals on described the 2nd direction.

10. lighting device is characterized in that having:

The lighting device housing, it is equipped with the described described semiconductor light emitting module of claim 9, and have illumination and use opening, this illumination is passed through to the light exit direction with the light that opening sends the described collector lens of the described semiconductor light-emitting apparatus by described semiconductor light emitting module;

Euphotic cover, it blocks described illumination opening; And

The power supply linkage unit, it is used to connect described semiconductor light emitting module and power supply.