CN102030301B - Micro suspension structure compatible with semiconductor element and manufacturing method thereof - Google Patents
Micro suspension structure compatible with semiconductor element and manufacturing method thereof Download PDFInfo
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- CN102030301B CN102030301B CN200910178599A CN200910178599A CN102030301B CN 102030301 B CN102030301 B CN 102030301B CN 200910178599 A CN200910178599 A CN 200910178599A CN 200910178599 A CN200910178599 A CN 200910178599A CN 102030301 B CN102030301 B CN 102030301B
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Abstract
The invention relates to a manufacturing method of a micro suspension structure compatible with a semiconductor element, comprising the following step of forming the semiconductor element and a micro electro mechanical structure in an insulation layer above a silicon substrate. The micro electro mechanical structure comprises independent microstructures, a compatible connector and a metal circuit, wherein the compatible connector is electrically connected with the semiconductor element and the micro electro mechanical structure. The silicon substrate enables the micro electro mechanical structure to suspend by a cutting space generated by first etching and a suspension space generated by secondary etching and communicated with the cutting space, and the micro electro mechanical structure is electrically connected with the semiconductor element by utilizing the compatible connector in the insulation layer. Therefore, the invention effectively combines the micro electro mechanical structure and the semiconductor element and avoids the micro electro mechanical structure from eroding and exposing improperly. Meanwhile, the invention also discloses the micro suspension structure compatible with the semiconductor element, which is formed by the manufacturing method.
Description
Technical field
The invention relates to a kind of arrangement of semiconductors and manufacturing approach, and particularly relevant for a kind of miniature suspension structure and manufacturing approach thereof.
Background technology
(Micro-Electro-Mechanical Systems MEMS) comprises various microstructure to MEMS now.For example, Immobile probe, runner, opening structure, or structure such as some movable springs, connecting rod, gear.Above-mentioned different microstructure is integrated with relevant semiconductor circuit each other, can be constituted various semiconductor application.Semiconductor circuit for example complementary metal oxide layer semiconductor (Complementary Metal-Oxide Semiconductor, CMOS).And promote the various function of micro mechanical structure through manufacturing approach and structural design, and be the crucial pointer of following semiconductor micro electromechanical system, also be following severe challenge when further studying chip.Therefore, improve known technology if can research and develop, development in future property can't be estimated in fact.
At present transducer in the microelectromechanicdevices devices and actuator all are independent of outside the semiconductor element and make, and must utilize the micro electronmechanical operation of special use such as wet etching, dry ecthing and sacrifice layer (sacrificial-layer) removal on silicon base, to produce floated structure.Wherein, wet etching is a kind of etching mode fast and effectively, and its employed etchant has quite high " selectivity " (selectivity) to different materials usually.And dry ecthing, for example plasma etching then is that the gas that utilizes part to dissociate carries out, great advantage promptly is that dry ecthing is " anisotropic etching " (anisotropic etching).
Yet following problems has appearred in aforementioned known techniques.The first, no matter be to adopt which kind of etching mode, all must make microelectromechanicdevices devices and semiconductor element respectively, two kinds of processing procedures can't compatiblely be integrated.Only can in preceding processing procedure, produce separately respectively, in the processing procedure of back, connect compatible again.Thus, see through ghost effect and the numerous and diverse program that routing produced and to make cost high, more can increase the complexity of following back system encapsulation.The second, wet etching is an isotropic etching, not only can vertically carry out etching, also can produce horizontal etch effect simultaneously.And lateral etches can cause what is called " lateral erosion " defective (undercut).The 3rd, though dry ecthing is an anisotropic etching, the selectivity of dry ecthing is but come lowly than wet etching.
Therefore, reactive ion etching (Reactive Ion Etching, technology RIE) in order to improve the problems of limited etching technique, to develop.Though this kind technology can significantly reduce side etching phenomenon, because etching process is from top to bottom successively to carry out etching equally, and a large amount of etching work of last silicon base still must use the lateral etches technology to reach.And etching process repeatedly all can pass through micro electromechanical structure, causes micro electromechanical structure in carrying out a large amount of etchings and lateral etches process, still can't avoid side etching phenomenon.Moreover micro electromechanical structure can expose to the open air outside after processing procedure finishes, and then influences yield.
In sum, present various technology still can't solve problem how to integrate compatible microcomputer electric installation and semiconductor element.Because the design of micro electromechanical structure now is more and more meticulous, causes being connected more and more between microelectromechanicdevices devices and the semiconductor element to be not easy, and then cause production cost to increase.And among different processing procedures, also having pollution, error, cost and residual various challenges occurs.
Because this; This case inventor is through detailed think of funiculus; And the long-pending experience of being engaged in various semiconductor micro electromechanical product designs and semiconducter research production for many years, develop and a kind ofly can integrate compatible microcomputer electric installation and semiconductor element, avoid the miniature suspension structure and the manufacturing approach thereof of the compatible semiconductor element that micro electromechanical structure exposes to the open air.
Summary of the invention
A purpose of the present invention is to provide a kind of miniature suspension structure of compatible semiconductor element, can effectively combine micro electromechanical structure and semiconductor element.
According to an embodiment of the present invention, a kind of miniature suspension structure of compatible semiconductor element comprises silicon base and is positioned at the insulating barrier on the silicon base.The silicon base below has cutting room and suspension space.Cutting room is positioned at suspension space inwall, and the suspension space communicates with cutting room.Have micro-structural, semiconductor element in the insulating barrier and be electrically connected at semiconductor element and micro-structural between compatible connector.Wherein the cutting room of silicon base arrives the insulating barrier bottom surface, and cutting room is corresponding between micro-structural and semiconductor element, the silicon base of micro-structural below and semiconductor element below is separated and insulate.Micro-structural then utilizes the suspension space of silicon base to reach suspension.
The miniature suspension structure of aforementioned compatible semiconductor element also is included in surface of insulating layer and has over cap.The inner micro-structural that suspends of over cap protection can directly not expose micro-structural whereby.
Another object of the present invention is to provide a kind of miniature suspension structure manufacturing approach of compatible semiconductor element, can effectively avoid improper erosion and structure residual.And this manufacturing approach is integrated microelectromechanicdevices devices and semiconductor element and compatiblely within same processing procedure, is accomplished, and can effectively simplify processing procedure and reduces cost.
According to another execution mode of the present invention, a kind of miniature suspension structure manufacturing approach of compatible semiconductor element may further comprise the steps.The insulating barrier of tool micro electromechanical structure and semiconductor element in the silicon base surface forms.Wherein, micro electromechanical structure comprises micro-structural independent of each other, compatible connector and a plurality of metallic circuit.Metallic circuit is positioned at micro-structural and compatible connector top, and the metallic circuit edge of micro-structural top is roomy than micro-structural, and compatible connector then is electrically connected between semiconductor element and the micro-structural.Then, carry out the insulating barrier etching with the formation etching space, and etching space only arrives the superiors metallic circuit edge.Next, the metallic circuit etching that exposes is eliminated, and carried out etching, to produce the consistent a plurality of cutting rooms of the degree of depth in the silicon base bottom surface from the silicon base bottom surface towards micro electromechanical structure and semiconductor element.At last, carry out etching,, micro-structural is suspended to produce the suspension space in the silicon base bottom surface from silicon base bottom surface and cutting room application choice ratio.Continue the etching cutting room simultaneously to the consistent degree of depth, and arrive the insulating barrier bottom surface, the suspension space is communicated with cutting room, so as to letting silicon base below micro electromechanical structure and the semiconductor element be cut separated by spaces and insulating.
Aforementioned manufacturing approach also is included in surface of insulating layer cover cap over cap.The inner micro-structural that suspends of protection makes micro-structural in the silicon base etching process, can directly not expose to etching space whereby.
Miniature suspension structure and the manufacturing approach thereof of using compatible semiconductor element of the present invention can effectively combine micro electromechanical structure and semiconductor element within same processing procedure, to accomplish, and significantly reduce the complexity and the cost of processing procedure.In addition, utilize the mode of cover cap over cap to make micro-structural in the silicon base etching process, can directly not expose to etching space, and can receive the protection of filling part, effectively avoid micro-structural to expose to the open air and by improper erosion.
Description of drawings
For letting above and other objects of the present invention, characteristic, advantage and the embodiment can be more obviously understandable, the explanation of appended accompanying drawing be following:
Fig. 1 to Fig. 9 is the section of structure that illustrates according in each step of miniature suspension structure manufacturing approach of a kind of compatible semiconductor element of an embodiment of the present invention;
Figure 10 is the sketch map that illustrates the miniature suspension structure of compatible semiconductor element among Fig. 9.
[main element symbol description]
100: silicon base 101: retaining space
102: cutting room 103: the suspension space
110: upper surface 120: bottom surface
200: insulating barrier 201: etching space
202: partial suspended space 210: micro electromechanical structure
211: micro-structural 212: compatible connector
213: metallic circuit 214: metal bolt
220: semiconductor element 300: the cover layer
310: through hole 400: over cap
500: cover layer 510: opening
600: the cover layer
Embodiment
Fig. 1 to Fig. 9 is the section of structure that illustrates according in each step of miniature suspension structure manufacturing approach of a kind of compatible semiconductor element of an embodiment of the present invention.Detailed step so as to miniature suspension structure manufacturing approach that compatible semiconductor element is described.
As shown in Figure 1, at first form insulating barrier 200, and have parallel micro electromechanical structure 210 and semiconductor element 220 side by side in the insulating barrier 200 at a silicon base 100 upper surfaces 110.Micro electromechanical structure 210 comprises at least one micro-structural independent of each other 211, at least one compatible connector 212 and a plurality of metallic circuits 213.Metallic circuit 213 lays respectively at micro-structural 211 and compatible connector 212 tops, and metallic circuit 213 edges of micro-structural 211 tops are roomy than micro-structural 211.Compatible 212 of connectors are electrically connected between semiconductor element 220 and the micro electromechanical structure 210, and make metal bolt 214 in all sides of micro-structural 211.Semiconductor element is complementary metal oxide layer semiconductor (Complementary Metal-OxideSemiconductor, CMOS) element for example then.
Because the design and the manufacturing of silicon base 100, insulating barrier 200, micro-structural 211, metallic circuit 213 and metal bolt 214 are all common example, standard semiconductor fabrication techniques.The cooperation details of therefore, being correlated with is seldom done at this and is given unnecessary details.
Then, as shown in Figure 2, make cover layer 300 on insulating barrier 200 surfaces.Cover layer 300 is surface exposed, and the expection etching space place of cover layer 300 corresponding micro electromechanical structure 210 is provided with through hole 310.
Next, as shown in Figure 3, keep out layer with the superiors' metallic circuit 213 as etching.Carry out reactive ion etching downwards from the through hole 310 of cover layer 300, in insulating barrier 200, to form etching space 201.Because etching space 201 only arrives the superiors' metallic circuit 213 edges, so etching space 201 can not arrive internal microstructure 211 and metallic circuit 213.In other words, micro-structural 211 and inner metallic circuit 213 still receive the parcel of insulating barrier 200, so micro electromechanical structure 210 can not expose inner micro-structural 211 or metallic circuit 213 to the open air.Then, utilize metal ion etching or wet etching that the superiors' metallic circuit 213 and metal bolt 214 etchings are eliminated, producing partial suspended space 202, and then make the part micro-structural 211 of micro electromechanical structure 210 suspend, as shown in Figure 4.
Come again, as shown in Figure 5, utilize 100 etchings of dark reactive ion etching, and the retaining space 101 of the consistent degree of depth is provided the silicon base etching in the design of application choice ratio along etching space 201 towards silicon base.And the cover layer 300 that then will expose is removed (not removing as yet among the figure).
Then, as shown in Figure 6, at insulating barrier 200 surperficial cover cap over caps 400.Over cap 400 is protected inner micro-structural 211 and other micro electromechanical structure 210 that suspends whereby.Therefore, micro electromechanical structure 210 also is protected the protection of lid except that the parcel protection that receives aforementioned dielectric layer 200.This protection of filling part makes micro electromechanical structure 210 can not expose inner micro-structural 211 or metallic circuit 213 to the open air and contaminated.Yet the over cap 400 of this step is not indispensable unique execution mode for selectivity designs.
Simultaneously, as shown in Figure 7, from the bottom surface 120 making cover layers 500 of silicon base 100, and covering making opening 510 on the layer 500.Opening 510 is corresponding on the cover layer 500 between micro electromechanical structure 210 and the semiconductor element 220.Utilize dark reactive ion etching to carry out etching towards silicon base 100, and the design etched of application choice ratio is provided the cutting room 102 of the consistent degree of depth by opening 510.
Then, as shown in Figure 8, will cover layer 500 and remove, revolve sheet layer 600 in the bottom surface 120 of silicon base 100 again, and remove the cover layer 600 that corresponds to micro electromechanical structure 210 positions.That is to say the scope that removal cutting room 102 centers on and the cover layer 600 of cutting room 102 marginal portions.
At last, removed the position of cover layer 600 from the bottom surface 120 of silicon base 100 and carried out dark reactive ion etching, and contained cutting room 102 etching in the lump.At this moment, the design etched of the application choice ratio space 103 that goes out to suspend.Because the silicon base 100 at cutting room 102 places can be etched the degree of depth consistent with the space 103 of suspending equally; So this execution mode can select than let cutting room 102 arrive insulating barrier 200 bottom surfaces through control; And then silicon base 100 is communicated with cutting room 102 and aforementioned retaining space 101 through the suspension space 103 that etching produces, make the micro-structural 211 of all the other micro electromechanical structures 210 suspend.And silicon base 100 is cut space 102 separations and makes micro electromechanical structure 210 and semiconductor element 220 insulation, and the electric connection that utilizes the compatible connectors 212 in the insulating barrier 200 to reach micro electromechanical structure 210 and semiconductor element 220, and is as shown in Figure 9.
In sum, the miniature suspension structure manufacturing approach of the compatible semiconductor element of this execution mode is to form semiconductor element and at least one micro electromechanical structure at least in the insulating barrier above silicon base.And micro electromechanical structure comprises at least one micro-structural independent of each other, at least one compatible connector and a plurality of metallic circuit.Utilize compatible connector to electrically connect semiconductor element and micro electromechanical structure.
And the bottom at the bottom of the foregoing silicon substrate produces cutting room through etching for the first time, utilizes etching for the second time to produce the suspension space again and communicates with cutting room.At this moment because the cutting room of silicon base makes micro electromechanical structure suspend and and semiconductor element insulating, and the electric connection that utilizes the compatible connector in the insulating barrier to reach micro electromechanical structure and semiconductor element.The processing procedure that effectively combines micro electromechanical structure and semiconductor element is whereby simplified processing procedure and is reduced cost, and avoids the improper erosion of micro electromechanical structure and expose to the open air.
What deserves to be mentioned is; The miniature suspension structure manufacturing approach of compatible semiconductor element of the present invention is among etching process; Can comply with the retaining space of design, and the suspension space that utilizes subsequent that the silicon base bottom surface is formed communicates with retaining space towards the silicon base etch preset degree of depth.At this moment, the micro electromechanical structure of suspension below can isolate corresponding reservation silicon base.This thickness that keeps silicon base is then decided for the degree of depth according to retaining space, and the calculating of etching selectivity capable of using comes accurately control.
In addition, the suspension of micro electromechanical structure design is that reach in the suspension space that utilizes etching silicon substrate bottom to be produced.But then configurable metal bolt in micro electromechanical structure; And behind the etching metal latch, produce the effect that inner local micro-structural suspends, and then increase the application and the effect of the formed structure of miniature suspension structure manufacturing approach of utilizing compatible semiconductor element of the present invention.
Then, please consult Fig. 9 and Figure 10 simultaneously.Aforementioned section of structure shown in Figure 9 is the miniature suspension structure profile that utilizes the formed a kind of compatible semiconductor element of this execution mode.Figure 10 is then for illustrating the sketch map of the miniature suspension structure of compatible semiconductor element among Fig. 9.As shown in the figure, the miniature suspension structure of compatible semiconductor element has silicon base 100 and insulating barrier 200.
200 of insulating barriers are arranged on the silicon base 100.Tool micro electromechanical structure 210 and semiconductor element 220 in the insulating barrier 200, micro electromechanical structure 210 comprise at least one micro-structural 211 independent of each other and at least one compatible connector 212.102 of aforementioned cutting rooms are corresponding silicon base 100 between micro-structural 211 and semiconductor element 220, make the silicon base 100 of micro-structural 211 belows and semiconductor element 220 belows be separated and make micro electromechanical structure 210 and semiconductor element 220 insulation.
Among the miniature suspension structure of aforementioned compatible semiconductor element, can be at insulating barrier 200 surperficial cover cap over caps 400, over cap 400 is protected inner micro-structural 211 and other micro electromechanical structure 210 that suspends whereby.Therefore micro electromechanical structure 210 obtains to fill the protection of part, and can not expose inner micro-structural 211 to the open air.
Can know that by the invention described above execution mode miniature suspension structure and the manufacturing approach thereof of using compatible semiconductor element of the present invention have advantage.The first, because micro electromechanical structure receives insulating barrier parcel, can not expose to the open air, thus the infringement can prevent etching the time, and then reduce and damage probability.The second, make over cap at surface of insulating layer, whereby inner micro-structural and other micro electromechanical structure that suspends of over cap protection.Therefore, micro electromechanical structure can obtain to fill the protection of part, can not expose the pollution that inner micro-structural or metallic circuit cause micro electromechanical structure to the open air.The 3rd, owing to being separated, silicon base makes micro electromechanical structure and semiconductor element mutually insulated, and the electric connection that utilizes the compatible connector in the insulating barrier to reach micro electromechanical structure and semiconductor element.So can directly in processing procedure, produce microelectromechanicdevices devices and semiconductor element simultaneously, and compatible each other and electrically connect accurately.
Though the present invention discloses as above with execution mode; Right its is not in order to limiting the present invention, anyly is familiar with this technological personnel, do not breaking away from the spirit and scope of the present invention; When can doing various changes and retouching, so protection scope of the present invention is as the criterion when looking the scope that claims define.
Claims (9)
1. the miniature suspension structure manufacturing approach of a compatible semiconductor element is characterized in that, comprising:
An insulating barrier of tool one micro electromechanical structure and semiconductor element in silicon base surface forms; This micro electromechanical structure comprises a micro-structural independent of each other, a compatible connector and a plurality of metallic circuit; Those metallic circuits be positioned at this micro-structural and should the compatibility connector top; And this metallic circuit edge of this micro-structural top is roomy than this micro-structural, and this compatibility connector is electrically connected between this semiconductor element and this micro-structural;
This insulating barrier of etching forms an etching space, and this etching space only arrives this metallic circuit edge of the superiors;
This metallic circuit that exposes is eliminated in etching;
Carry out etching from this silicon base bottom surface towards this micro electromechanical structure and this semiconductor element, to produce the consistent a plurality of cutting rooms of the degree of depth in this silicon base bottom surface; And
Application choice is carried out etching than from this silicon base bottom surface and those cutting rooms; To produce a suspension space in this silicon base bottom surface; This micro-structural is suspended, and make those cutting rooms continue to be etched out the consistent degree of depth, and arrive this insulating barrier bottom surface; This suspension space is communicated with those cutting rooms, and this silicon base of this micro electromechanical structure and this semiconductor element below is separated and is insulated by those cutting rooms.
2. the miniature suspension structure manufacturing approach of compatible semiconductor element according to claim 1 is characterized in that, also comprises:
Make a metal bolt and be positioned at all sides of this micro-structural; And
Etching is eliminated this metal bolt producing partial suspended space, and then the part micro-structural of this micro electromechanical structure is suspended.
3. the miniature suspension structure manufacturing approach of compatible semiconductor element according to claim 2 is characterized in that, also comprises:
Make a cover layer in this surface of insulating layer;
Form a through hole, this through hole is positioned at the expection etching space place of corresponding this micro electromechanical structure of this cover layer;
Carry out reactive ion etching downwards to form this etching space by this through hole;
This metallic circuit and this metal bolt utilizing metal ion etching or wet etching to remove to expose; And
Utilize deep reactive ion etch along this this silicon base of etching space etching, to form a retaining space.
4. the miniature suspension structure manufacturing approach of compatible semiconductor element according to claim 3 is characterized in that, also comprises:
After removal should be covered layer, cover cap one over cap borrowed this over cap to protect the micro-structural of inner suspension at this surface of insulating layer.
5. the miniature suspension structure manufacturing approach of compatible semiconductor element according to claim 1 is characterized in that, also comprises:
Make a cover layer in this surface of insulating layer,
Form a through hole, this through hole is positioned at the expection etching space place of corresponding this micro electromechanical structure of this cover layer;
Carry out reactive ion etching downwards from this through hole and form this etching space;
This metallic circuit etching that utilizes metal ion etching or wet etching to expose is eliminated;
Utilize deep reactive ion etch along this etching space towards this silicon base etching, to form a retaining space; And
Removing should the cover layer.
6. the miniature suspension structure manufacturing approach of compatible semiconductor element according to claim 1 is characterized in that, also comprises:
Cover cap one protection is placed on this surface of insulating layer, borrows the over cap protection inner this micro-structural that suspends.
7. the miniature suspension structure manufacturing approach of compatible semiconductor element according to claim 1 is characterized in that, etched step comprises from the bottom surface of silicon base:
Make a cover layer in the bottom surface of this silicon base;
On this cover layer, make an opening, this opening is between with respect to this micro electromechanical structure and this semiconductor element;
Utilize deep reactive ion etch by this opening towards this silicon base etching, to form this cutting room;
Removal corresponds to this cover layer of this micro electromechanical structure; And
Removed the position of this cover layer from this silicon base bottom surface and carried out deep reactive ion etch to etch this suspension space.
8. the miniature suspension structure of a compatible semiconductor element is characterized in that, is that application rights requires 1 described manufacturing approach to form, and the miniature suspension structure of this compatibility semiconductor element comprises:
One silicon base, below have a cutting space and a suspension space, and this cutting room is positioned at this suspension space inwall, and should communicate with this cutting room in the suspension space; And
One insulating barrier is arranged on this silicon base, has a micro-structural in this insulating barrier, semiconductor element, and a compatible connector is electrically connected between this semiconductor element and this micro-structural,
Wherein, This cutting room of this silicon base arrives this insulating barrier bottom surface; And this cutting room is corresponding between this micro-structural and this semiconductor element; The silicon base of this micro-structural below and this semiconductor element below is separated and insulate, this micro-structural then utilizes the suspension space of this silicon base to reach suspension.
9. the miniature suspension structure of compatible semiconductor element according to claim 8 is characterized in that, also comprises:
One over cap is located at this surface of insulating layer, so as to protecting inner this micro-structural that suspends.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101434375A (en) * | 2007-11-16 | 2009-05-20 | 微智半导体股份有限公司 | Method for manufacturing semiconductor micro electromechanical structure |
| CN101468784A (en) * | 2007-12-25 | 2009-07-01 | 微智半导体股份有限公司 | Semiconductor miniature suspension structure and method of producing the same |
| CN102030305A (en) * | 2009-09-29 | 2011-04-27 | 微智半导体股份有限公司 | Micro suspension structure compatible with semiconductor element and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101434375A (en) * | 2007-11-16 | 2009-05-20 | 微智半导体股份有限公司 | Method for manufacturing semiconductor micro electromechanical structure |
| CN101468784A (en) * | 2007-12-25 | 2009-07-01 | 微智半导体股份有限公司 | Semiconductor miniature suspension structure and method of producing the same |
| CN102030305A (en) * | 2009-09-29 | 2011-04-27 | 微智半导体股份有限公司 | Micro suspension structure compatible with semiconductor element and manufacturing method thereof |
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