CN102024875A - 用于薄膜叠层式电池的器件以及快速热处理方法 - Google Patents
用于薄膜叠层式电池的器件以及快速热处理方法 Download PDFInfo
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- CN102024875A CN102024875A CN2010102867910A CN201010286791A CN102024875A CN 102024875 A CN102024875 A CN 102024875A CN 2010102867910 A CN2010102867910 A CN 2010102867910A CN 201010286791 A CN201010286791 A CN 201010286791A CN 102024875 A CN102024875 A CN 102024875A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
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Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US5581009A | 2009-09-11 | 2009-09-11 | |
US12,558/108 | 2009-09-11 |
Publications (1)
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CN102024875A true CN102024875A (zh) | 2011-04-20 |
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CN2010102867910A Pending CN102024875A (zh) | 2009-09-11 | 2010-09-13 | 用于薄膜叠层式电池的器件以及快速热处理方法 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102394256A (zh) * | 2011-11-16 | 2012-03-28 | 浙江大学 | 用于太阳电池吸收层的铜铟硫阵列化薄膜的制备方法 |
CN104681664A (zh) * | 2013-11-27 | 2015-06-03 | 韩华Qcells有限公司 | 太阳能电池生产方法 |
CN115491654A (zh) * | 2022-08-29 | 2022-12-20 | 江苏布拉维光学科技有限公司 | 一种制备硒化锌硫化锌叠层光学材料的方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5578503A (en) * | 1992-09-22 | 1996-11-26 | Siemens Aktiengesellschaft | Rapid process for producing a chalcopyrite semiconductor on a substrate |
US5834331A (en) * | 1996-10-17 | 1998-11-10 | Northwestern University | Method for making III-Nitride laser and detection device |
US6350946B1 (en) * | 1999-09-10 | 2002-02-26 | Fuji Photo Film Co., Ltd. | Photoelectric conversion device and photoelectric cell |
US20070089782A1 (en) * | 2003-10-02 | 2007-04-26 | Scheuten Glasgroep | Spherical or grain-shaped semiconductor element for use in solar cells and method for producing the same; method for producing a solar cell comprising said semiconductor element and solar cell |
CN201156545Y (zh) * | 2008-01-07 | 2008-11-26 | 四川大学 | 一种锑化铝透明薄膜太阳电池 |
CN100530701C (zh) * | 2002-09-30 | 2009-08-19 | 米亚索尔公司 | 薄膜太阳能电池大规模生产的制造装置与方法 |
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2010
- 2010-09-13 CN CN2010102867910A patent/CN102024875A/zh active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5578503A (en) * | 1992-09-22 | 1996-11-26 | Siemens Aktiengesellschaft | Rapid process for producing a chalcopyrite semiconductor on a substrate |
US5834331A (en) * | 1996-10-17 | 1998-11-10 | Northwestern University | Method for making III-Nitride laser and detection device |
US6350946B1 (en) * | 1999-09-10 | 2002-02-26 | Fuji Photo Film Co., Ltd. | Photoelectric conversion device and photoelectric cell |
CN100530701C (zh) * | 2002-09-30 | 2009-08-19 | 米亚索尔公司 | 薄膜太阳能电池大规模生产的制造装置与方法 |
US20070089782A1 (en) * | 2003-10-02 | 2007-04-26 | Scheuten Glasgroep | Spherical or grain-shaped semiconductor element for use in solar cells and method for producing the same; method for producing a solar cell comprising said semiconductor element and solar cell |
CN201156545Y (zh) * | 2008-01-07 | 2008-11-26 | 四川大学 | 一种锑化铝透明薄膜太阳电池 |
Non-Patent Citations (1)
Title |
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周少雄: "CuInS2薄膜太阳能电池", 《物理》 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102394256A (zh) * | 2011-11-16 | 2012-03-28 | 浙江大学 | 用于太阳电池吸收层的铜铟硫阵列化薄膜的制备方法 |
CN104681664A (zh) * | 2013-11-27 | 2015-06-03 | 韩华Qcells有限公司 | 太阳能电池生产方法 |
CN115491654A (zh) * | 2022-08-29 | 2022-12-20 | 江苏布拉维光学科技有限公司 | 一种制备硒化锌硫化锌叠层光学材料的方法 |
CN115491654B (zh) * | 2022-08-29 | 2024-01-16 | 江苏布拉维光学科技有限公司 | 一种制备硒化锌硫化锌叠层光学材料的方法 |
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ASS | Succession or assignment of patent right |
Owner name: DEVELOPMENT EXPERT COMPANY Free format text: FORMER OWNER: CM MANUFACTURING INC. Effective date: 20150105 Owner name: HETF SOLAR INC. Free format text: FORMER OWNER: DEVELOPMENT EXPERT COMPANY Effective date: 20150105 |
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Address after: California, USA Applicant after: STION Corp. Address before: California, USA Applicant before: HETF solar Address after: California, USA Applicant after: CM manufacturing Co. Address before: California, USA Applicant before: Stion Corp. |
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Free format text: CORRECT: APPLICANT; FROM: HETF SOLAR INC. TO: STION CORP. Free format text: CORRECT: APPLICANT; FROM: STION CORP. TO: CM MANUFACTURING INC. |
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Effective date of registration: 20150105 Address after: California, USA Applicant after: HETF solar Address before: California, USA Applicant before: Development Specialist Effective date of registration: 20150105 Address after: California, USA Applicant after: Development Specialist Address before: California, USA Applicant before: CM manufacturing Co. |
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Application publication date: 20110420 |