CN102024658A - Plasma processing equipment and method - Google Patents
Plasma processing equipment and method Download PDFInfo
- Publication number
- CN102024658A CN102024658A CN2009100930546A CN200910093054A CN102024658A CN 102024658 A CN102024658 A CN 102024658A CN 2009100930546 A CN2009100930546 A CN 2009100930546A CN 200910093054 A CN200910093054 A CN 200910093054A CN 102024658 A CN102024658 A CN 102024658A
- Authority
- CN
- China
- Prior art keywords
- plasma
- processing
- parameter
- aperture plate
- pulse
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention provides plasma processing equipment, which comprises a process chamber, an upper electrode, a lower electrode and a grid mesh, wherein the upper electrode and the lower electrode are arranged in the process chamber; the grid mesh is arranged between the upper electrode and the lower electrode and connected with a pulse voltage or an alternating current voltage; and the parameter of the pulse voltage or the alternating current voltage can be adjusted so as to change a plasma parameter. The invention also provides a plasma processing method. In the plasma processing equipment and the plasma processing method, the plasma parameter can be adjusted effectively, the adjustment range of the plasma parameter is enlarged and particle pollution is reduced.
Description
Technical field
The present invention relates to technical field of plasma, concrete, relate to a kind of apparatus for processing plasma and method.
Background technology
Along with the continuous progress of science and technology, it is ripe that plasma process/treatment technology is tending towards gradually, and be widely used in the middle of the manufacture process of high-tech products such as semiconductor, solar cell and TFT panel, and competition is also fierce day by day between the manufacturing enterprise.In order to satisfy enterprise to the new demand that product quality and production efficiency proposed, numerous scientific research personnel must be constantly do the improvement that makes new advances and perfect to the technology in present technique field and equipment.
At present, plasma process technology commonly used comprises plasma etching, physical vapour deposition (PVD) (Physical Vapor Deposition, hereinafter to be referred as PVD) and plasma enhanced chemical vapor deposition processing technologys such as (Plasma Enhanced Chemical Vapor Deposition are hereinafter to be referred as PECVD).These technologies are normally carried out in apparatus for processing plasma, known common equipment mainly comprises capacitance coupling plasma (CapacitivelyCoupled Plasma, C P), inductively coupled plasma (InductivelyCoupled Plasma, hereinafter to be referred as ICP) and Ecr plasma several class apparatus for processing plasma such as (ElectronCyclotron Resonance are hereinafter to be referred as ECR).Wherein, ICP equipment is used for the etching manufacture field of polysilicon more, the then manufacture fields such as dielectric etch and thin film deposition that are used for of CCP equipment more.
See also Fig. 1, be a kind of principle schematic of CCP equipment commonly used.This CCP equipment comprises processing chamber 10, radio-frequency power supply 1, adaptation 2, top electrode 3, bottom electrode 4 and air extractor 6.Wherein, top electrode 3 is positioned at the inner and upper position of processing chamber 10, and top electrode 3 is provided with the venthole 5 of a plurality of perforations, so that top electrode 3 is used as inlet duct; Bottom electrode 4 is positioned at the inside lower position of processing chamber 10, and it is in roughly relative position with top electrode 3, can be used to carry workpiece to be processed 11 (for example, substrate or silicon chip) in technical process; Radio-frequency power supply 1 is connected to top electrode 3 via adaptation 2, and provides radio-frequency power for top electrode 3; Air extractor 6 is arranged at the bottom of processing chamber 10, thereby discharges pressure and the cleanliness factor that keeps in the processing chamber 10 with gas and the byproduct of reaction that will be produced in the technical process.
The technical process of the said equipment is as follows: at first, workpiece to be processed 11 is placed on reposefully the upper surface of bottom electrode 4; In processing chamber 10, feed process gas by air admission hole 5; Radio-frequency power supply 1 provides radio-frequency power for top electrode 3, process gas is excited be plasma 7; Carry out respective handling by 7 pairs of workpieces to be processed of this plasma 11.
In the above-mentioned course of processing, effective adjusting of article on plasma body parameter is to ensure one of key factor of processing speed and crudy.Here, plasma parameter comprises plasma density, electron temperature, relative composition etc.But, adopt each parameter of CCP equipment article on plasma body shown in Figure 1 to carry out independent regulation and usually can't meet the demands, can influence the stable of other parameter when perhaps regulating a parameter again; For example, will be in guaranteeing chamber improve plasma density under the prerequisite of process gas flow and stable gas pressure, can only realize by voltage and/or the power output that increases radio-frequency power supply, yet, unicity ground increase voltage and/or radio-frequency power will make and can influence for example other parameter of electron temperature, sheath layer current potential etc. when increasing plasma density, therefore, the independent adjustable extent of each parameter of plasma is severely limited and can't reaches perfect condition.
See also Fig. 2, for increasing the independent adjustable extent of plasma parameter, those skilled in the art increase an aperture plate 8 between the top electrode 3 of CCP equipment shown in Figure 1 and bottom electrode 4, thereby processing chamber 10 is divided into top area 7 and lower region 9, make aperture plate 8 be in a stable potential state then, regulate plasma parameter in the hope of utilizing the different electrical properties in aperture plate 8 both sides.At present, the current potential setting on the aperture plate 8 is generally included following four kinds of modes: aperture plate 8 ground connection, aperture plate 8 suspend over the ground, aperture plate 8 connects the direct current positive bias, aperture plate 8 connects dc negative bias voltage.
Apparatus for processing plasma shown in Figure 2 can change the plasma parameter in the chamber to a certain extent, but inevitably produces other problem.Below in conjunction with Fig. 2 the situation that aperture plate 8 connects different potentials is illustrated respectively.
When aperture plate 8 ground connection, its current potential is zero, forms radio frequency path between top electrode 3 and the aperture plate 8.Therefore, the plasma in the top area 7 is difficult to arrive lower region 9 by aperture plate 8, and this just causes the plasma density of bottom electrode 4 tops to reduce relatively, and then influences process rate, the reaction rate in the time of especially can seriously reducing thin film deposition.
Situation about suspending for aperture plate 8 (here, suspension is meant and utilizes some insulating material as pottery etc. that aperture plate 8 is fixed in the chamber, so that it keeps and the electric state of isolating of chamber inner wall), owing to the reason of the electron mobility in the plasma greater than ionic mobility, the surf zone of aperture plate 8 will gather a large amount of electronics and and then form ion sheath, again because the electric field action of this sheath layer, make and be diffused into the electron energy that near aperture plate 8 electron energies are lower than plasma generating area, cause the chemical reaction probability that threshold value can be higher in the plasma to reduce, and finally influence process results.
When aperture plate 8 connects the direct current positive bias, it is in positive potential and offsets the ion sheath current potential and form the electronics sheath, near the electronics that is diffused into the aperture plate 8 obtains energy and is accelerated from this sheath layer electric field, therefore, high energy electron in the plasma increases, further impel the chemical reaction probability that threshold value can be higher to increase, the result can influence process results equally, and film component is changed etc.
When aperture plate 8 connects dc negative bias voltage, it is in negative potential and further impels negative sheath layer current potential to increase, the sheath layer thickness is also along with increase simultaneously, thereby cause being diffused near aperture plate 8 electronics and be subjected to very strong repulsive interaction, therefore cause near the electron energies the aperture plate 8 to reduce, and then the collision capacity of decomposition of electron and molecule is reduced and influence plasma parameter.
Summary of the invention
For addressing the above problem, the invention provides a kind of apparatus for processing plasma and method, it can effectively be regulated plasma parameter, thereby obtain desirable plasma by aperture plate being set and connecting adjustable pulse voltage or the alternating voltage of parameter on aperture plate.
For this reason, the invention provides a kind of apparatus for processing plasma, comprise processing chamber, top electrode and bottom electrode in the processing chamber are set, wherein, between described top electrode and bottom electrode, be provided with aperture plate, described aperture plate is connected with periodically variable pulse voltage and/or alternating voltage, and the parameter of described pulse voltage and/or alternating voltage all can be conditioned to change plasma parameter.
Wherein, the waveform of described pulse voltage comprises square wave, triangular wave; The parameter of described pulse voltage comprises pulse amplitude, rise time, fall time, pulse period, duty ratio, positive pulse width, negative pulse width.
Wherein, the waveform of described alternating voltage comprises sine wave, cosine wave; The parameter of described alternating voltage comprises angular frequency, amplitude, effective value, mean value.
Wherein, the size of mesh opening of described aperture plate is decided according to the Debye length of plasma space.
As another kind of technical scheme, the present invention also provides a kind of method of plasma processing, and in order to improve the plasma characteristics in the processing chamber, it comprises the steps: 10) aperture plate is set between top electrode in processing chamber and the bottom electrode; 20) process gas of injection technology chamber is excited being plasma, simultaneously, is that described aperture plate connects pulse voltage and/or alternating voltage; 30) carry out corresponding processing technology by described plasma, the parameter of regulating described pulse voltage and/or alternating voltage is to change plasma parameter.
The present invention has following beneficial effect:
At first, apparatus for processing plasma provided by the present invention, between upper and lower electrode, aperture plate is set, and makes aperture plate connect pulse voltage or alternating voltage, thereby make the current potential and the corresponding change of sheath layer characteristic of aperture plate both sides along with the alive cycle sexual intercourseization of institute on the aperture plate.Therefore, apparatus for processing plasma provided by the present invention can effectively overcome the various shortcomings that make aperture plate be in ground connection, suspension or single current potential in the background technology, thereby can each parameter of article on plasma body effectively regulate.
Secondly, all parameters of pulse voltage that apparatus for processing plasma provided by the present invention adopted and alternating voltage all can be regulated individually or simultaneously, thereby can be according to the actual needs in the technical process and the plasma parameter in the adjusting process chamber in real time.Therefore, each parameter of apparatus for processing plasma article on plasma body provided by the invention has the adjustable range of stronger regulating power and broad.
Once more, in some specific plasma process, some charged ion clusters can be gathered into dust granules, and cause the particle contamination to workpiece.And apparatus for processing plasma provided by the invention is connected with on aperture plate and can does periodically variable pulse voltage or alternating voltage in time.Therefore; different phase in the current potential cycle; can (for example react with the dust granules that has different electric charges; when aperture plate is in the positive period of voltage; the dust granules that has negative electricity can be attracted by the electrostatic force on the aperture plate and bury in oblivion by neutralization reaction); thereby change the dust property or the quantity of reduction dust granules, and then effectively reduce the particle contamination in the technology.
In addition, method of plasma processing provided by the present invention, by between the upper and lower electrode of apparatus for processing plasma, aperture plate being set, and the pulse voltage and the alternating voltage that on this aperture plate, are connected with cyclic variation and can be conditioned.Therefore, it can article on plasma body parameter effectively be regulated equally, and increases the adjustable range of plasma parameter, reduces particle contamination simultaneously.
Description of drawings
Fig. 1 be a kind of CCP equipment at present commonly used principle schematic;
Fig. 2 for a kind of existing CCP equipment that has an aperture plate principle schematic;
Fig. 3 is the oscillogram of the pulse voltage that aperture plate connected in specific embodiment of apparatus for processing plasma provided by the invention; And
Fig. 4 is the oscillogram of the alternating voltage that aperture plate connected in second kind of specific embodiment of apparatus for processing plasma provided by the invention.
Embodiment
For making those skilled in the art understand technical scheme of the present invention better, apparatus for processing plasma provided by the invention and method are described in detail below in conjunction with accompanying drawing.
Apparatus for processing plasma provided by the present invention, structure similar with apparatus for processing plasma shown in Figure 2, specifically comprise: processing chamber, be arranged on top electrode and bottom electrode in the processing chamber, the radio-frequency power supply and the corresponding adaptation of radio-frequency power are provided for top electrode, and between upper and lower electrode, also be provided with an aperture plate, this aperture plate connects pulse voltage and/or alternating voltage, realize the adjusting of article on plasma body parameter by regulating the pulse voltage that connected on the aperture plate or the parameter of alternating voltage, thereby improve plasma characteristics.In the practical application, the visual concrete technical process of the distance of aperture plate and upper and lower electrode and between tens millimeters, being provided with at several millimeters, and, the size of mesh opening of this aperture plate can be decided according to the Debye length of concrete plasma space, for example make the Debye length of size of mesh opening and plasma space suitable, this size is generally in the magnitude of hundreds of micron to millimeter.Here, so-called debye (Debye) length is meant the distance that the electric field of arbitrary electric charge in the plasma can act on.
See also Fig. 3, for being connected to the oscillogram of the pulse voltage on the aperture plate in specific embodiment of apparatus for processing plasma provided by the present invention.As shown in the figure, the waveform of the pulse voltage in the present embodiment is a square wave, and high level is V1, and low level is V2.Along with the variation of impulse waveform, current potential also changes thereupon on the aperture plate.Particularly, when aperture plate was in positive potential V1, its surface formed electronics sheath layer, was diffused near this sheath layer electronics and obtained energy and be accelerated in sheath layer electric field, because the electron energy after being accelerated increases, impel the corresponding increase of probability of the higher plasma reaction of threshold value energy; When aperture plate was in negative potential V2, its surface formed the cation sheath, was diffused near the electronics of this sheath layer and was subjected to repulsive interaction and its energy is reduced, and then the probability of the higher plasma reaction of corresponding threshold value energy is reduced.Hence one can see that, when needs are regulated the probability of plasma reaction, only needs to change the high level V1 of pulse voltage and the size of low level V2, perhaps changes high level V1 and low level V2 shared ratio in one-period and get final product.That is, apparatus for processing plasma provided by the invention is connected to the relevant parameter of the pulse voltage of aperture plate by change, and changes the sheath layer characteristic of aperture plate near surface, and then changes the plasma parameter in the processing chamber.
It is to be noted; the square-wave waveform that is adopted in the present embodiment only is the example of enumerating for the ease of the technical staff understands the present invention; pulse voltage among the present invention be meant neither direct current just non-again/cosine exchange be periodically variable voltage; therefore; its waveform can also comprise triangular wave; half-sinusoid; sawtooth waveforms; in many waveforms such as sawtooth waveforms any one; perhaps adopt any several in the above-mentioned waveform to superpose or be spaced and form new composite wave-shape; as long as the parameter that the pulse voltage that is adopted can effectively be regulated plasma just all should be considered as the scope that the present invention protects.
Except that waveform, parameters such as the pulse amplitude of pulse voltage of the present invention, high level voltage, low level voltage, rise time, fall time, pulse period, duty ratio, positive pulse width, negative pulse width can both be regulated separately or Several Parameters is wherein regulated simultaneously, thereby obtain even more ideal plasma, specifically the adjustment process to each parameter can obtain to regulate accurately numerical value by theory analysis and experimental verification.Wherein, the concrete implication of each parameter of pulse voltage is as described below, is the english abbreviation of expression relevant parameter in the bracket.
Pulse amplitude (Vm) is meant the maximum changing amplitude of pulse voltage; High level voltage (VH) refers to the maximum of pulse voltage; Low level voltage (VL) refers to the minimum value of pulse voltage; Rise time (tr), rising edge of a pulse rises to the needed time of 0.9Vm from 0.1Vm; Fall time (tf), the pulse trailing edge drops to the needed time of 0.1Vm from 0.9Vm; Pulse period (T), the periodically time interval between two adjacent pulses in the pulse train that repeats; Duty ratio (q), the ratio of positive pulse width and pulse period, its computing formula is q=tpw/T; Positive pulse width (tpw) is from pulse front edge 0.5Vm, to back a period of time till 0.5Vm; Negative pulse width (tnw), from pulse back edge 0.5Vm, a period of time till the 0.5Vm of forward position.
See also Fig. 4, for being connected to the oscillogram of the alternating voltage on the aperture plate in another specific embodiment of apparatus for processing plasma provided by the present invention.Here, described alternating voltage is meant sinusoidal voltage or cosine alternating voltage.As shown in the figure, the alternating voltage that is adopted in the present embodiment is a sinusoidal voltage, certainly, also can adopt the cosine alternating voltage.Particularly, when the current potential on the aperture plate is in the positive half period of sinusoidal voltage, its surface forms electronics sheath layer, being diffused near this sheath layer electronics obtains energy and is accelerated in sheath layer electric field, thereby electron energy is increased, and then the probability of the higher plasma reaction of threshold value energy is increased; When the current potential on the aperture plate was in the negative half-cycle of sinusoidal voltage, its surface formed the cation sheath, was diffused near the electronics of this sheath layer and was subjected to repulsive interaction and its energy is reduced, and then the probability of the higher plasma reaction of corresponding threshold value energy is reduced.Hence one can see that, and when needs were regulated the probability of plasma reaction, the cycle or the amplitude that only need to regulate sinusoidal voltage got final product.Certainly, in order to regulate the parameter of plasma better, can also regulate parameters such as the angular frequency of the alternating voltage that is connected to aperture plate, amplitude, effective value, mean values, to obtain desirable plasma.
Be understandable that apparatus for processing plasma provided by the present invention can also take to connect simultaneously for described aperture plate the mode of pulse voltage and alternating voltage in the middle of practical application, thereby make aperture plate have the composite voltage of said two devices; Certainly, also can apply pulse and alternating voltage to aperture plate in the compartment of terrain, can be as for concrete parameter regulation process those skilled in the art by analyzing and obtaining desirable adjusting number range in conjunction with experiment.
It is to be noted, the regulative mode of apparatus for processing plasma article on plasma body parameter provided by the present invention is not limited thereto, it also can be according to actual needs and in each parameter of regulating impulse voltage or alternating voltage, adopt some conventional regulating measures, for example increase the radio-frequency power/voltage of top electrode etc.
In sum, apparatus for processing plasma provided by the present invention, by on aperture plate, connecting pulse voltage or alternating voltage, make the current potential and the corresponding change of sheath layer characteristic of aperture plate both sides, thereby article on plasma body parameter is regulated effectively along with the alive cyclic variation of institute on the aperture plate; And all parameters of this pulse voltage and alternating voltage all can be regulated individually or simultaneously, and therefore, apparatus for processing plasma of the present invention can effectively increase the adjustable range of each parameter of article on plasma body; And, apparatus for processing plasma provided by the invention in the different phase in its aperture plate current potential cycle, can react with the dust granules that has corresponding electric charge, changing dust property or to reduce the quantity of dust granules, thereby can effectively reduce the particle contamination in the technology.
As another technical scheme, the present invention also provides a kind of method of plasma processing, in order to improve the plasma characteristics in the processing chamber, it may further comprise the steps: 10) between top electrode in processing chamber and the bottom electrode aperture plate is set, the size of mesh opening of this aperture plate is decided according to the Debye length of plasma space, and aperture plate and upper and lower distance between electrodes are decided according to concrete technology; 20) process gas of injection technology chamber is excited being plasma, simultaneously, is that described aperture plate connects pulse voltage and/or alternating voltage; 30) carry out corresponding processing technology by described plasma; Simultaneously, regulate the parameter of the pulse voltage be connected to aperture plate and/or alternating voltage to obtain desirable plasma.
Similar with the apparatus for processing plasma that the invention described above provides, the waveform of the pulse voltage described in the method for plasma processing provided by the invention can comprise square wave, triangular wave, half-sinusoid, sawtooth waveforms, every any one or a few combination of sawtooth waveforms.And the pulse amplitude of this pulse voltage, high level voltage, low level voltage, rise time, fall time, pulse period, duty ratio, positive pulse width, negative pulse width can both change to regulate the relevant parameter of plasma.Concrete implication and adjustment process as for each parameter are then similar with above-mentioned apparatus for processing plasma, repeat no more.
In the method for plasma processing provided by the invention, the alternating voltage that is connected to aperture plate specifically can be sinusoidal voltage or cosine alternating voltage, and the angular frequency of this alternating voltage, amplitude, effective value, mean value can be conditioned equally.And the method for plasma processing that the present invention carried equally can be for aperture plate connects pulse and alternating voltage simultaneously, or the mode of taking to apply pulse voltage and alternating voltage is at interval regulated plasma parameter.
In sum, method of plasma processing provided by the present invention, by apply radio-frequency voltage and/or alternating voltage, and each parameter of regulating the voltage that applies for aperture plate, can article on plasma body parameter effectively regulate, and the adjustable range of increase plasma parameter, reduce particle contamination simultaneously.
It is pointed out that apparatus for processing plasma provided by the present invention and method are not limited only to the CCP treatment technology, it can be applicable in the middle of the plasma processes of ICP and ECR etc. equally.
Be understandable that above execution mode only is the illustrative embodiments that adopts for principle of the present invention is described, yet the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement also are considered as protection scope of the present invention.
Claims (12)
1. apparatus for processing plasma, comprise processing chamber, top electrode and bottom electrode in the processing chamber are set, it is characterized in that, between described top electrode and bottom electrode, be provided with aperture plate, described aperture plate is connected with periodically variable pulse voltage and/or alternating voltage, and the parameter of described pulse voltage and/or alternating voltage all can be conditioned to change plasma parameter.
2. apparatus for processing plasma according to claim 1 is characterized in that the waveform of described pulse voltage comprises square wave, triangular wave.
3. apparatus for processing plasma according to claim 2 is characterized in that the parameter of described pulse voltage comprises pulse amplitude, rise time, fall time, pulse period, duty ratio, positive pulse width, negative pulse width.
4. apparatus for processing plasma according to claim 1 is characterized in that the waveform of described alternating voltage comprises sine wave, cosine wave.
5. apparatus for processing plasma according to claim 4 is characterized in that the parameter of described alternating voltage comprises angular frequency, amplitude, effective value, mean value.
6. apparatus for processing plasma according to claim 1 is characterized in that the size of mesh opening of described aperture plate is decided according to the Debye length of plasma space.
7. a method of plasma processing in order to improve the plasma characteristics in the processing chamber, is characterized in that, comprises the steps:
10) between top electrode in processing chamber and the bottom electrode aperture plate is set;
20) process gas of injection technology chamber is excited being plasma, simultaneously, is that described aperture plate connects pulse voltage and/or alternating voltage;
30) carry out corresponding processing technology by described plasma, the parameter of regulating described pulse voltage and/or alternating voltage is to change plasma parameter.
8. method of plasma processing according to claim 7 is characterized in that the waveform of described pulse voltage comprises square wave, triangular wave.
9. method of plasma processing according to claim 8 is characterized in that the parameter of described pulse voltage comprises pulse amplitude, rise time, fall time, pulse period, duty ratio, positive pulse width, negative pulse width.
10. method of plasma processing according to claim 7 is characterized in that the waveform of described alternating voltage comprises sine wave, cosine wave.
11. method of plasma processing according to claim 9 is characterized in that, the parameter of described alternating voltage comprises angular frequency, amplitude, effective value, mean value.
12. method of plasma processing according to claim 7 is characterized in that, the size of mesh opening of described aperture plate is decided according to the Debye length of plasma space.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910093054A CN102024658B (en) | 2009-09-22 | 2009-09-22 | Plasma processing equipment and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910093054A CN102024658B (en) | 2009-09-22 | 2009-09-22 | Plasma processing equipment and method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102024658A true CN102024658A (en) | 2011-04-20 |
| CN102024658B CN102024658B (en) | 2012-09-05 |
Family
ID=43865820
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910093054A Active CN102024658B (en) | 2009-09-22 | 2009-09-22 | Plasma processing equipment and method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102024658B (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105949836A (en) * | 2016-05-13 | 2016-09-21 | 无锡荣坚五金工具有限公司 | Device and method for forming surface coating with adoption of grid control and plasma-initiated gas-phase polymerization |
| CN108878249A (en) * | 2018-06-19 | 2018-11-23 | 大连理工大学 | A kind of pulse Penning discharge plasma producing apparatus |
| US10424465B2 (en) * | 2016-11-30 | 2019-09-24 | Jiangsu Favored Nanotechnology Co., LTD | Plasma polymerization coating apparatus |
| US11154903B2 (en) | 2016-05-13 | 2021-10-26 | Jiangsu Favored Nanotechnology Co., Ltd. | Apparatus and method for surface coating by means of grid control and plasma-initiated gas-phase polymerization |
| CN113820265A (en) * | 2021-09-28 | 2021-12-21 | 北京卫星环境工程研究所 | Composite dust multi-parameter detection method |
| US11332829B2 (en) | 2016-11-30 | 2022-05-17 | Jiangsu Favored Nanotechnology Co., LTD | Plasma polymerization coating with uniformity control |
| US11339477B2 (en) | 2016-11-30 | 2022-05-24 | Jiangsu Favored Nanotechnology Co., LTD | Plasma polymerization coating apparatus and process |
| WO2022111567A1 (en) * | 2020-11-27 | 2022-06-02 | 北京北方华创微电子装备有限公司 | Semiconductor process device and power control method |
| CN117457557A (en) * | 2023-12-12 | 2024-01-26 | 深圳市恒运昌真空技术有限公司 | Plasma processing equipment and method |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1168116C (en) * | 2000-04-27 | 2004-09-22 | 香港城市大学 | DC plasma ion implantation apparatus with grounded conducting net |
| CN101045989B (en) * | 2007-04-30 | 2010-09-29 | 大连理工大学 | Low energy ion implanter based on great area DC pulse plasma |
-
2009
- 2009-09-22 CN CN200910093054A patent/CN102024658B/en active Active
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105949836A (en) * | 2016-05-13 | 2016-09-21 | 无锡荣坚五金工具有限公司 | Device and method for forming surface coating with adoption of grid control and plasma-initiated gas-phase polymerization |
| WO2017193561A1 (en) * | 2016-05-13 | 2017-11-16 | 无锡荣坚五金工具有限公司 | Apparatus and method for surface coating by means of grid control and plasma-initiated gas-phase polymerization |
| US11154903B2 (en) | 2016-05-13 | 2021-10-26 | Jiangsu Favored Nanotechnology Co., Ltd. | Apparatus and method for surface coating by means of grid control and plasma-initiated gas-phase polymerization |
| US10424465B2 (en) * | 2016-11-30 | 2019-09-24 | Jiangsu Favored Nanotechnology Co., LTD | Plasma polymerization coating apparatus |
| US11332829B2 (en) | 2016-11-30 | 2022-05-17 | Jiangsu Favored Nanotechnology Co., LTD | Plasma polymerization coating with uniformity control |
| US11339477B2 (en) | 2016-11-30 | 2022-05-24 | Jiangsu Favored Nanotechnology Co., LTD | Plasma polymerization coating apparatus and process |
| CN108878249A (en) * | 2018-06-19 | 2018-11-23 | 大连理工大学 | A kind of pulse Penning discharge plasma producing apparatus |
| CN108878249B (en) * | 2018-06-19 | 2020-01-17 | 大连理工大学 | Pulse penning discharge plasma generating device |
| WO2022111567A1 (en) * | 2020-11-27 | 2022-06-02 | 北京北方华创微电子装备有限公司 | Semiconductor process device and power control method |
| CN113820265A (en) * | 2021-09-28 | 2021-12-21 | 北京卫星环境工程研究所 | Composite dust multi-parameter detection method |
| CN117457557A (en) * | 2023-12-12 | 2024-01-26 | 深圳市恒运昌真空技术有限公司 | Plasma processing equipment and method |
| CN117457557B (en) * | 2023-12-12 | 2024-04-16 | 深圳市恒运昌真空技术股份有限公司 | Plasma processing equipment and method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102024658B (en) | 2012-09-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102024658B (en) | Plasma processing equipment and method | |
| CN101277580A (en) | Plasma processing apparatus of substrate and plasma processing method thereof | |
| CN107852805B (en) | Hollow cathode plasma source | |
| JP2001508923A (en) | Capacitively coupled RF plasma reaction chamber | |
| Maeshige et al. | Functional design of a pulsed two-frequency capacitively coupled plasma in CF 4/Ar for SiO 2 etching | |
| CN104205306A (en) | Method for control of adherence of microparticles to base material to be processed, and processing device | |
| CN106548918A (en) | A kind of magnetization capacitively coupled plasma source of radio frequency and direct current combination drive | |
| EP3711078A1 (en) | Linearized energetic radio-frequency plasma ion source | |
| CN102209426A (en) | Plasma processing method and plasma processing apparatus | |
| CN103915308A (en) | Double radio-frequency pulse plasma etching method and etching device | |
| Rebiai et al. | 2-D simulation of dual frequency capacitively coupled helium plasma, using COMSOL multiphysics | |
| KR20230031311A (en) | Voltage pulse time domain multiplexing | |
| CN102300383A (en) | Inductance coupling apparatus and plasma processing equipment applying same | |
| WO2022271383A1 (en) | Pulsed voltage source for plasma processing applications | |
| US8704445B2 (en) | Method for improving uniformity of high-frequency plasma discharge by means of frequency modulation | |
| JP6002522B2 (en) | Thin film forming apparatus and thin film forming method | |
| CN101783281A (en) | Plasma etching device and etching method of grid electrode | |
| Abidat et al. | Numerical simulation of atmospheric dielectric barrier discharge in helium gas using COMSOL Multiphysics | |
| CN103785646A (en) | Reaction cavity cleaning method | |
| Baars-Hibbe et al. | Micro-structured electrode arrays:: high-frequency discharges at atmospheric pressure—characterization and new applications | |
| Diomede et al. | Particle‐in‐cell simulation of electron and ion energy distributions in dc/rf hybrid capacitively‐coupled plasmas | |
| CN110872116A (en) | Preparation device and preparation method of graphene | |
| JP2008277583A (en) | Plasma processing apparatus | |
| Zhao et al. | The Effect of Gas Flow Rate on Radio-Frequency Hollow Cathode Discharge Characteristics | |
| CN110391120A (en) | A kind of spray head and plasma process chamber |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016 Beijing, Jiuxianqiao, East Road, No. 1, M5 floor, South floor, floor, layer two Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
|
| CP03 | Change of name, title or address |