CN102017095A - Vacuum processing apparatus - Google Patents
Vacuum processing apparatus Download PDFInfo
- Publication number
- CN102017095A CN102017095A CN2009801101524A CN200980110152A CN102017095A CN 102017095 A CN102017095 A CN 102017095A CN 2009801101524 A CN2009801101524 A CN 2009801101524A CN 200980110152 A CN200980110152 A CN 200980110152A CN 102017095 A CN102017095 A CN 102017095A
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- China
- Prior art keywords
- treatment installation
- substrate
- vacuum treatment
- gas
- described vacuum
- Prior art date
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Links
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 238000005530 etching Methods 0.000 claims abstract description 18
- 229910008934 W—N Inorganic materials 0.000 claims abstract description 7
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 7
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 7
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims abstract description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 6
- 238000009489 vacuum treatment Methods 0.000 claims description 47
- 238000009434 installation Methods 0.000 claims description 42
- 239000011248 coating agent Substances 0.000 claims description 30
- 238000000576 coating method Methods 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 30
- 230000000873 masking effect Effects 0.000 claims description 27
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 238000000605 extraction Methods 0.000 claims description 5
- 230000008676 import Effects 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 238000007772 electroless plating Methods 0.000 claims description 4
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 238000005245 sintering Methods 0.000 claims description 3
- 238000007751 thermal spraying Methods 0.000 claims description 3
- 239000011521 glass Substances 0.000 abstract description 4
- 239000011247 coating layer Substances 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 239000000460 chlorine Substances 0.000 description 19
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000010949 copper Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 239000004411 aluminium Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000003321 amplification Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000012423 maintenance Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32633—Baffles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
Abstract
The present invention relates to a vacuum processing apparatus, more particularly to a vacuum processing apparatus which performs vacuum processes such as etching and deposition for a substrate of glass for an LCD panel, etc. The disclosed vacuum processing apparatus includes: a detachable cover which is attached to at least a part of an inner side of a vacuum chamber; and/or a detachable shielding member which is installed between a lateral side of a substrate support and the inner side of the vacuum chamber to shield a space therebetween. A coating layer containing at least one of W, Ni, W-N, Cr and Mo is formed on the surfaces of the cover and shielding member.
Description
Technical field
The present invention relates to vacuum treatment installation, be specifically related to the substrates such as glass that are used for the LCD control board are carried out the etching of being correlated with, the vacuum treatment installation that the evaporation equal vacuum is handled.
Background technology
Vacuum treatment installation is in forming the vacuum chamber of handling the space electrode to be set, and form plasma by under vacuum state, importing power supply, thereby substrate surface set in the substrate support sector is evaporated the device of (Vacuum Evaporation), etching equal vacuum treatment project to electrode.
On the existing substrate surface film that comprises aluminium (Al), titanium (Ti), tantalum (Ta), molybdenum (Mo), copper (Cu) and silicon (Si) is carried out under the etched situation, chlorine trifluoride (ClF is injected in the processing space of vacuum treatment installation
3), fluoroform (CHF
3) and boron chloride (BCl
3) wait gas.
At this moment, the vacuum cavity of vacuum treatment installation is made by aluminium (Aluminium-Al) or its alloy material generally speaking, and its inner surface carries out anodization generally speaking to be handled, and has promptly formed alundum (Al (Al
2O
3) film.
Aforesaid to handling space injection ClF
3, CHF
3And BCl
3Situation under, formed Al on the vacuum cavity inner surface
2O
3Film and ClF
3, CHF
3And BCl
3Each other chemical reaction taking place and removes Al
2O
3Film, thus make the inner surface to vacuum cavity apply damage.
Therefore existing vacuum treatment installation is for to carry out etching and to inject ClF the film that has comprised Al, Ti, Ta, Mo, Cu and Si
3, CHF
3And BCl
3And can cause damage to the inner surface of vacuum cavity and the puncture situation takes place, thereby can make the vacuum treatment engineering unstable and need keep in repair or maintenance and maintenance operation such as replacement to the part of being damaged.
Summary of the invention
(1) technical problem that will solve
To the object of the present invention is to provide in order addressing the above problem, and to provide by on the surface that masking material and this masking material removably are set on the inner surface of vacuum cavity, further being formed with and ClF
3, CHF
3And BCl
3Deng gas the metal level of the material of chemical reaction not taking place, thereby can prevent by ClF
3, CHF
3And BCl
3Deng the vacuum treatment installation of the caused masking material surface damage of gas and the masking material that on this device, uses.
Another object of the present invention is to, be provided as the spatial masking between the inner surface that makes substrate set in the vacuum cavity support platform and vacuum cavity, support at substrate between the inner surface of the side surface of platform and vacuum cavity shield member to be set removably, further be formed with in its surface and ClF
3, CHF
3And BCl
3Deng gas the metal level of the material of chemical reaction not taking place, thereby can prevent by ClF
3, CHF
3And BCl
3Deng the vacuum treatment installation of the caused shield member surface damage of gas and the shield member that on this device, uses.
(2) technical scheme
In order to reach aforesaid purpose of the present invention, vacuum treatment installation provided by the present invention comprises:
Form plasma, formed be used on rectangular substrate, carrying out vacuum treated processing space, formed the vacuum cavity that the substrate that substrate is supported is supported platform;
Be arranged at described vacuum cavity upside be used for gas gas supplied supply unit is carried out in described processing space;
Be used for being connected and be arranged at exhaust outlet on the described vacuum cavity with the gas extraction system of described processing space being carried out pressure adjustment and exhaust;
For forming the power input part that is used to import power supply that plasma is provided with on described vacuum cavity by described gas supply part gas supplied;
Removably closely be connected with on described vacuum cavity at least a portion inner surface and be formed with the masking material that comprises coating arbitrary among W, Ni, W-N, Cr and the Mo at least a portion surface.
Simultaneously, the present invention also provides a kind of vacuum treatment installation, and described vacuum treatment installation comprises:
Form plasma, formed be used on rectangular substrate, carrying out vacuum treated processing space, formed the vacuum cavity that the substrate that substrate is supported is supported platform;
Be arranged at described vacuum cavity upside be used for gas gas supplied supply unit is carried out in described processing space;
Be used for being connected and be arranged at exhaust outlet on the described vacuum cavity with the gas extraction system of described processing space being carried out pressure adjustment and exhaust;
For forming the power input part that is used to import power supply that plasma is provided with on described vacuum cavity by described gas supply part gas supplied;
Support space between the inner surface of the side of platform and described vacuum cavity to be formed with the shield member that comprises coating arbitrary among W, Ni, W-N, Cr and the Mo on the surface of dismountable setting for shielding described substrate.
Described shield member is formed with exhaust outlet or is provided with the exhaust adjusting device for portion from it being begun control to the gas flow of bottom.
Described vacuum treatment installation can be used as and utilizes etching gas to come to comprise that film arbitrary among Al, Ti, Ta, Mo, Cu and the Si carries out multiple vacuum treatment installations such as etched Etaching device and uses to being formed on the described substrate.
Described etching gas can comprise Cl or F, specifically can comprise Cl
2, SF
6, Cl
3, ClF
3, CHF
3, BCl
3Deng in arbitrary.
Described vacuum treatment installation can be used as that film forming vaporising device uses on the surface of aforesaid substrate.
Described coating can form by any one method in the mode of electroless plating, thermal spraying or sintering.
Preferably, the thickness of described coating t is 1 μ m≤t≤500 μ m, than 1 μ m≤t≤500 μ m more preferably is, the thickness of described coating t is 10 μ m≤t≤500 μ m.
(3) beneficial effect
Masking material detachably is set on the inner surface of vacuum cavity in the vacuum treatment installation involved in the present invention, further is formed with and Cl on the surface of this masking material
2, SF
6, Cl
3, ClF
3, CHF
3And BCl
3Deng gas the metal level of the material of chemical reaction does not take place, because at Cl
2, SF
6, Cl
3, ClF
3, CHF
3And BCl
3Deng the damage that has prevented the masking material surface in the gas, therefore can prolong the life-span of masking material, replacement cycle significant prolongation can be made, and then finally the maintenance and repair expense can be reduced significantly.
And the interval between the substrate support plate that vacuum treatment installation involved in the present invention is provided with for the inside of shielding vacuum cavity and the inner surface of vacuum cavity removably is provided with shield member between the inner surface of the side surface of substrate support plate and vacuum cavity, further be formed with in its surface and Cl
2, SF
6, Cl
3, ClF
3, CHF
3And BCl
3Deng gas the metal level of the material of chemical reaction does not take place, because at Cl
2, SF
6, Cl
3, ClF
3, CHF
3And BCl
3Deng the damage that has prevented the shield member surface in the gas, therefore can prolong the life-span of shield member, replacement cycle significant prolongation can be made, and then finally the maintenance and repair expense can be reduced significantly.
Description of drawings
Fig. 1 is for showing the sectional view of vacuum treatment installation involved in the present invention;
Fig. 2 is the masking material that uses in the vacuum treatment installation of exploded view 1 and the amplification sectional view of shield member;
Fig. 3 is the amplification sectional view that forms the situation of most juts on the shield member of exploded view 2.
Embodiment
Come below with reference to accompanying drawings the masking material and the shield member of vacuum treatment installation involved in the present invention and use on this device are elaborated.
Fig. 1 is for showing the sectional view of vacuum treatment installation involved in the present invention.
As shown in Figure 1, vacuum treatment installation involved in the present invention comprises that the substrate that has formed the vacuum cavity 100 that is used for carrying out in inside the processing space S that etching, evaporation equal vacuum handle and be arranged at vacuum cavity 100 internal support substrates 1 supports platform 140.
As vacuum treated object, owing to need carry out etching or evaporation operation to its surface, substrate 1 can be wafer that semiconductor uses or LCD panel with various substrates such as glass substrates.The object of vacuum treatment installation involved in the present invention especially tends to LCD glass substrate, especially rectangular substrate.
And vacuum treatment installation involved in the present invention constitutes, and formed film carries out the Etaching device of etching operation on the surface to substrate, on the surface of substrate film forming vaporising device etc., the vacuum treatment of setting or carry out etching and evaporation operation.
Described vacuum cavity 100 can be fabricated to different shape and the structure by design condition and designing institute decision, can be configured to comprise interconnective to form upper case 110 and lower case 120, the perhaps upper lid of handling space S.Be formed with on the side of vacuum cavity 100 at this moment and be used for the chamber door 150 that substrate is come in and gone out.
And described vacuum cavity 100 can be provided with gas supply part (not shown) that is used for supply gas in handling space S and the exhaust outlet (not shown) that is connected with the gas extraction system (not shown) that is used for pressure adjusting (vacuum pressure) and exhaust etc.
Described gas supply part can possess multiple structure according to the supply form of gas, as shown in Figure 1, can be made of the shower nozzle 230 that is connected with gas supply device.
And vacuum cavity 100 involved in the present invention can be provided with power input part (not shown) etc. for forming plasma.Described power input part can possess multiple structure according to the power supply input mode, as shown in Figure 1, can be used to import the lower electrode of RF power supply and constitutes by ground connection shower nozzle 230 and with what the formed upper electrode of vacuum cavity ground connection and substrate were supported to be provided with in the platform.
Described substrate supports platform 140 as being used for support substrate 1, is supported by a plurality of ring flanges (Flange) 170, can be arranged on the vacuum cavity 100.And the upper surface of described substrate support plate 140 can be provided with by electrostatic force and draw the electrostatic clamp (not shown) of adsorbing fixing base 1.
Fig. 2 is the masking material that uses in the vacuum treatment installation of exploded view 1 and the amplification sectional view of shield member.
On the other hand, described vacuum treatment installation exists in the accessory substance that produces in the device operation can be attached on the device inwall, and has to often clean for removing this accessory substance.
Therefore for solving aforesaid problem, as shown in Figures 1 and 2, can be provided with close-connected masking material 240 at least a portion of the inner surface of vacuum cavity 100.
Described masking material 240 as metallicity materials such as aluminium or aluminium alloys on the inner surface that closely is connected in vacuum cavity, form by plate-shaped member, in order easily to carry out on the inner surface of vacuum cavity 100, removably connecting by screw by the adhering to and the caused replacement of damage that plasma caused of accessory substance.At this moment, described masking material 240 can be connected with the inner surface of "on" position with vacuum cavity 100 in order to keep ground state together when vacuum cavity 100 is in ground state.
On the other hand, as Fig. 1 and shown in Figure 2, described substrate is supported can be provided with in the clearance space between the inner surface of the side of platform 140 and vacuum cavity 100: support spatial masking between the inner surface of the side of platform 140 and vacuum cavity 100 in order to make substrate, support what the inner surface of the side of platform and/or vacuum cavity 100 removably connected with substrate, can be to the shield member 250 that the byproduct of reacting gas is not got rid of that comprises that stops up before.
At this moment, described shield member 250 can support the inner surface of platform 140 and/or vacuum cavity 100 to combine with state of insulation by embedding insulating element with substrate, can carry out dismountable the connection by screw in order to safeguard with the convenience of keeping in repair.
And described shield member 250 can be portion from it begun to control to the gas flow of bottom and can be formed with exhaust outlet (not shown) or be provided with exhaust apparatus.
On the other hand because plasma or accessory substance, form on the surface of masking material described in the prior art 240 and shield member 250 shield through anodised sull Al
2O
3Film.
Yet the related etching-film to the substrate 1 that formed the etching-film (film) that comprises Al, Ti, Ta, Mo, Cu and Si of vacuum treatment carries out under the etched situation, uses ClF
3, CHF
3And BCl
3Etc. the similar gas, the etching gas that comprise Cl (chlorine) or F (fluorine).
Such as, comprise Cl to using on the Al etching-film
2, BCl
3Etching gas, comprise BCl to using on the Mo etching-film
3, CHF
3Etching gas, comprise SF to using on the Si etching-film
6, Cl
3Etching gas.
In handling space S, inject ClF
3, CHF
3And BCl
3Under the situation Deng etching gas, there is anodic oxidation (Al
2O
3) masking material 240 after the processing and the Al on shield member 250 surfaces
2O
3With Cl
2, SF
6, Cl
3, ClF
3, CHF
3, BCl
3Cause the problem of lip-deep damage and generation puncture Deng etching gas generation chemical reaction
Therefore be formed with coating 241,251 at least a portion on employed masking material 240 and shield member 250 surfaces on the vacuum treatment installation involved in the present invention.
Described coating 241,251 can be used and Al
2O
3, and and Cl
2, SF
6, Cl
3, ClF
3, CHF
3, BCl
3Arbitrary among material W, Ni, W-N, Cr and the Mo that does not take place to answer chemistry side Deng gas.
Described coating 241,251 can form by multiple processing mode on the surface of masking material 240 and shield member 250, preferably, can adopt the mode of thermal spraying or sintering to form.More preferably, described coating 241,251 adopts immersion plating, particularly adopts the mode of electroless plating (Electroless Plating) to form.
Consider and can form the number range boundary of controlling to coating, the thickness of described coating 241,251 is preferably more than the 1 μ m.
And the thickness of described coating 241,251 is 10 μ m for more preferably.This is because the thickness (t) of coating coating quality, feature etc. under the situation that is lower than 10 μ m, can take place lowly.
On the other hand, the thickness of described coating 241,251 its quality and feature when increasing also can increase, probably reach the degree of 20 μ m when above, the quality and the feature of coating will be no longer proportional with its thickness, thereby the thickness of coating 241,251 can form optimal coating when its thickness is 20 μ m.
On the other hand, the thickness of described coating 241,251 is under the situation that is higher than 500 μ m, and this layer will not only cause the manufacturing expense of masking material 240 and shield member 250 to increase owing to too thick, the problem that also can cause manufacturing time to increase, therefore preferably selecting thickness is below the 500 μ m.
On the other hand, described masking material 240 and shield member 250 can form coating 241 again after can be formed directly in coating 241 or carry out anodic oxidation earlier on the surface of aluminium, aluminium alloy, stainless steel metallicity materials such as (Steel Use Stainless-SUS).
Fig. 3 is the amplification sectional view that forms the situation of most juts on the shield member of exploded view 2.
And, the surface of described coating 241,251, especially as shown in Figure 3, formed coating 241 is for preventing the situation that generable accessory substance adheres in the vacuum treatment process on the masking material 240, perhaps is formed with a plurality of juts 242 for the contact area of the vacuum cavity 100 that increases ground connection.
The method of conduct formation jut 242 on the surface of described coating 241,251 exists by spraying situation about realizing at this moment, and the method for covering (Mask) or mesh screen (Mesh) etc. of utilizing is arranged.
Below only be the part correlation explanation of preferred embodiment that technical solution of the present invention is implemented; well-known protection scope of the present invention is not limited in the content that the foregoing description limits and explains, above-mentioned illustrated technological thought of the present invention and all should be considered to be contained in protection scope of the present invention based on the technical thought of this thought.
Claims (10)
1. a vacuum treatment installation is characterized in that, described vacuum treatment installation comprises:
Form plasma, formed be used for to rectangular substrate carry out vacuum treated processing space, formed the vacuum cavity that the substrate that substrate is supported is supported platform;
Be arranged at described vacuum cavity upside be used for gas gas supplied supply unit is carried out in described processing space;
Be used for being connected and be arranged at exhaust outlet on the described vacuum cavity with the gas extraction system of described processing space being carried out pressure adjustment and exhaust;
For forming the power input part that is used to import power supply that plasma is provided with on described vacuum cavity by described gas supply part gas supplied;
Removably closely be connected with on described vacuum cavity at least a portion inner surface and be formed with the masking material that comprises coating arbitrary among W, Ni, W-N, Cr and the Mo at least a portion surface.
2. vacuum treatment installation as claimed in claim 1 is characterized in that, described vacuum treatment installation comprises:
Support spatial masking between the inner surface of the side of platform and described vacuum cavity to be formed with the shield member that comprises coating arbitrary among W, Ni, W-N, Cr and the Mo on the surface of dismountable setting for making described substrate.
3. a vacuum treatment installation is characterized in that, described vacuum treatment installation comprises:
Form plasma, form for rectangular substrate is carried out vacuum treated processing space, formed the vacuum cavity that the substrate that substrate is supported is supported platform;
Be arranged at described vacuum cavity upside be used for gas gas supplied supply unit is carried out in described processing space;
Be used for being connected and be arranged at exhaust outlet on the described vacuum cavity with the gas extraction system of described processing space being carried out pressure adjustment and exhaust;
For forming the power input part that is used to import power supply that plasma is provided with on described vacuum cavity by described gas supply part gas supplied;
Support spatial masking between the inner surface of the side of platform and described vacuum cavity to be formed with the shield member that comprises coating arbitrary among W, Ni, W-N, Cr and the Mo on the surface of dismountable setting in order to make described substrate.
4. as claim 2 or 3 described vacuum treatment installations, it is characterized in that described shield member is formed with exhaust outlet or is provided with the exhaust adjusting device for portion from it being begun control to the gas flow of bottom.
5. as each described vacuum treatment installation of claim 1-3, it is characterized in that described vacuum treatment installation carries out etched Etaching device for using etching gas to the film arbitrary among Al, Ti, Ta, Mo, Cu and the Si that comprises that forms on the substrate.
6. vacuum treatment installation as claimed in claim 5 is characterized in that described etching gas comprises Cl or F.
7. vacuum treatment installation as claimed in claim 1 is characterized in that, described vacuum treatment installation is a film forming vaporising device on the surface of described substrate.
8. as each described vacuum treatment installation of claim 1-3, it is characterized in that described coating is for to form by any one method in the mode of electroless plating, thermal spraying or sintering.
9. as each described vacuum treatment installation of claim 1-3, it is characterized in that the thickness of described coating is below the above 500 μ m of 1 μ m.
10. as each described vacuum treatment installation of claim 1-3, it is characterized in that the thickness of described coating is below the above 500 μ m of 10 μ m.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2008-0025789 | 2008-03-20 | ||
| KR20080025789A KR101486553B1 (en) | 2008-03-20 | 2008-03-20 | Vacuum Processing Apparatus |
| PCT/KR2009/001428 WO2009116833A2 (en) | 2008-03-20 | 2009-03-20 | Vacuum processing apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102017095A true CN102017095A (en) | 2011-04-13 |
| CN102017095B CN102017095B (en) | 2012-12-26 |
Family
ID=41091418
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009801101524A Active CN102017095B (en) | 2008-03-20 | 2009-03-20 | Vacuum processing apparatus |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR101486553B1 (en) |
| CN (1) | CN102017095B (en) |
| TW (1) | TWI503883B (en) |
| WO (1) | WO2009116833A2 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2020231665A1 (en) * | 2019-05-13 | 2020-11-19 | Applied Materials, Inc. | Titanium liner to reduce metal contamination |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102576658A (en) * | 2009-10-22 | 2012-07-11 | 株式会社爱发科 | Vacuum treatment apparatus and graph presentation method |
| JP5603219B2 (en) | 2009-12-28 | 2014-10-08 | キヤノンアネルバ株式会社 | Thin film forming equipment |
| KR101651172B1 (en) * | 2011-04-15 | 2016-08-26 | 주식회사 원익아이피에스 | Substrate processing apparatus |
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| KR20000020614A (en) * | 1998-09-22 | 2000-04-15 | 윤종용 | Method for etching semiconductor device |
| US6170429B1 (en) * | 1998-09-30 | 2001-01-09 | Lam Research Corporation | Chamber liner for semiconductor process chambers |
| US6444083B1 (en) * | 1999-06-30 | 2002-09-03 | Lam Research Corporation | Corrosion resistant component of semiconductor processing equipment and method of manufacturing thereof |
| US6613442B2 (en) * | 2000-12-29 | 2003-09-02 | Lam Research Corporation | Boron nitride/yttria composite components of semiconductor processing equipment and method of manufacturing thereof |
| CN100418187C (en) * | 2003-02-07 | 2008-09-10 | 东京毅力科创株式会社 | Plasma processing device, annular element and plasma processing method |
| KR20060031136A (en) * | 2004-10-07 | 2006-04-12 | 한국과학기술연구원 | Coating layer by thermal spray for vacuum plasma chamber and fabrication method thereof |
| US8647484B2 (en) * | 2005-11-25 | 2014-02-11 | Applied Materials, Inc. | Target for sputtering chamber |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2020231665A1 (en) * | 2019-05-13 | 2020-11-19 | Applied Materials, Inc. | Titanium liner to reduce metal contamination |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102017095B (en) | 2012-12-26 |
| TWI503883B (en) | 2015-10-11 |
| TW200941576A (en) | 2009-10-01 |
| KR101486553B1 (en) | 2015-01-26 |
| WO2009116833A3 (en) | 2009-12-17 |
| KR20090100543A (en) | 2009-09-24 |
| WO2009116833A2 (en) | 2009-09-24 |
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