CN102013457A - Manufacture method of OLED (organic light emitting diode) device and OLED device - Google Patents
Manufacture method of OLED (organic light emitting diode) device and OLED device Download PDFInfo
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Abstract
The embodiment of the invention discloses a manufacture method of an OLED (organic light emitting diode) device and the OLED device. The method comprises: forming a transparent electrode layer on a substrate; successively forming an organic film layer and a cathode metal layer on the transparent electrode layer; fitting the substrate with a rear cover to finish packaging the OLED device; irradiating the OLED device which takes a mask plate as a mask with ultraviolet ray; and attenuating the organic material of the organic film layer corresponding to a mask plate transmitting area to a set value. The manufacture method of the OLED device, which is provided by the invention, is characterized in that after the transparent electrode layer with a simple graph is formed by a simple manufacture procedure, a polyamide (PI) manufacture procedure is not needed to form a latticed insulating layer, and a cathode isolating post manufacture procedure is also not needed, thus simplifying the production flow, improving the production efficiency, reducing the used mask plate, and lowering the production cost; and meanwhile, the yield can be improved because a high-precision contrapuntal operation is not needed. The OLED device provided by the invention is suitable for displaying complex graphs comprising curves and turns, has low cost and is applicable to the fields of display and illumination.
Description
Technical field:
The present invention relates to show and lighting field, relate in particular to a kind of OLED device making method and OLED device.
Background technology:
OLED (Organic Light-Emitting Diode, Organic Light Emitting Diode) device has active illuminating, and shock resistance is good, and the visual angle is wide, operating temperature is wide, the contrast height can be realized advantages such as flexible demonstration, is acknowledged as the regeneration product of field of liquid crystal display, simultaneously, along with luminous efficiency and life-span rise year by year, the OLED device also can be widely used in lighting field except that can be used for demonstration.
The basic structure of OLED device is on the substrate being that anode and metal level are evaporation hole injection layer (Hole Injection Layer successively between the negative electrode with the transparent electrode layer, HIL), hole transmission layer (Hole Transport Layer, HTL), luminous material layer (Emitting Material Layer, EML), electron transfer layer (Electron Transport Layer, ETL) and electron injecting layer (Electron Inject Layer, EIL), each layer that is arranged between transparent electrode layer and the metal level is organic semiconducting materials.When the OLED device gets access to suitable supply of electric power, hole and electronics inject from anode and negative electrode respectively, conduct to luminescent layer through hole and electron transfer layer then, and in luminous material layer generation radiation recombination, be in excitation state behind the energy of the compound release of outer-shell electron absorption charge carrier of luminous material layer, radiation transistion is realized luminous.
The OLED device is to the demonstration of literal and pattern at present, usually adopt IC (integratedcircuit, integrated circuit) to the sub-pixel realization of lining by line scan, and the formation of meticulous sub-pixel need be at FEOL through repeatedly photoetching process realization, need to use complicated meticulous mask plate (Mask) and high-precision therebetween to bit manipulation.Concrete, in the OLED device making method of the prior art, after etching discrete transparency electrode, also need to form alternate anyhow latticed insulating barrier by photoetching process, and again with negative photoresist by photoetching, on direction perpendicular to discrete anode transparency electrode, form cathode insulated column, array pattern with common formation sub-pixel, and in the later stage processing procedure, form hole injection layer, hole transmission layer, luminous material layer, electron transfer layer, electron injecting layer and cathodic metal layer successively, finish encapsulation at last and obtain the OLED device.
Yet, in the production method of above-mentioned prior art, need adopt repeatedly photoetching process, therefore the production procedure complexity has limited the raising of production efficiency, and repeatedly photoetching process needs the mask plate of a plurality of corresponding complex patterns, make production cost higher, simultaneously need to carry out high-precision in the lithographic process,, will cause yields lower if the precision of contraposition is not enough to bit manipulation.
In addition, when demonstration comprises the complex pattern of curve and turnover,, then, make the OLED device cost higher in the prior art because the price accounting of IC is bigger if adopt IC control array of sub-pixels to realize; If directly on substrate, form complex pattern, then because the physicochemical properties restriction certain to being formed with of complex pattern of photoresist makes the OLED device be unfavorable for the demonstration of complex pattern by lithographic process repeatedly.
Summary of the invention
For solving the problems of the technologies described above, the object of the present invention is to provide a kind of OLED device making method, enhance productivity with realization, reduce production costs, and improve yields.Another object of the present invention is to provide a kind of OLED device,, make the OLED device be fit to show the complex pattern that comprises curve and turnover, improve its display effect to be implemented under the lower cost control.
OLED device making method provided by the invention comprises:
On substrate, form transparent electrode layer;
On transparent electrode layer, form organic film and cathodic metal layer successively;
Substrate and bonnet are fitted, finish the encapsulation of OLED device;
Use ultraviolet irradiation with the OLED device of mask plate, make the organic material of the organic film of mask plate transmission region correspondence decay to set point as mask.
Preferably, described ultraviolet wavelength is 100nm to 400nm.
Preferably, the time of described ultraviolet irradiation is not less than 30 seconds.
Preferably, described organic film comprises: hole injection layer, hole transmission layer, luminous material layer, electron transfer layer and electron injecting layer.
Preferably, described cathodic metal layer is aluminium lamination, magnesium layer or silver layer.
Preferably,
Described mask plate is metal mask plate, film mask plate or shading adhesive plaster.
Preferably, use ultraviolet irradiation with the OLED device of mask plate as mask, or:
At OLED device surface coating opaque;
With described opaque is that mask uses ultraviolet irradiation OLED device.
Preferably, the pattern of the transmission region of described mask plate is the pattern of the required demonstration of OLED device.
Preferably, the pattern of the non-transmission region of described mask plate is the pattern of the required demonstration of OLED device.
Preferably, the spacing of setting is close to or is existed to described mask plate and OLED device.
The OLED device that the embodiment of the invention provides comprises:
Substrate; Be formed at the transparent electrode layer on the substrate;
The organic film and the cathodic metal layer that on transparent electrode layer, form successively;
The bonnet that fits with substrate;
The organic material of predeterminable area is the organic material after complete attenuation or the underdamp in the described organic film;
Zone in the organic film beyond the setting regions is the normal light-emitting zone of OLED device.
In a kind of OLED device making method provided by the invention, by mask plate the OLED device after encapsulating is carried out ultraviolet irradiation, the organic material of OLED device setting regions is decayed, do not make it luminous or low-light level is luminous, and then can access required display effect.This scheme is after forming the simple transparent electrode layer of figure by simple processing procedure, need not carry out the PI processing procedure and form latticed insulating barrier, also need not the cathode insulated column processing procedure, therefore can simplify production procedure, enhance productivity, reduce the use of mask plate, reduce production costs, need not high-precisionly simultaneously, can improve the yields of OLED device bit manipulation.
In the OLED device provided by the invention, the organic material after complete attenuation or the underdamp is not luminous or low-light level is luminous, and all the other zones are normally luminous, and then realizes display text and figure.In this OLED device production process, need not can form complicated display pattern by lithographic process repeatedly, the restriction that therefore can avoid the characteristic of photoresist that complex pattern is shaped, suitable demonstration comprises the complex pattern of curve and turnover.Simultaneously, there are not latticed insulating barrier and cathode insulated column in this OLED device, there is not the array sub-pixel that forms by photoetching process repeatedly yet, need not during demonstration to adopt integrated circuit that sub-pixel is lined by line scan, therefore its cost is lower, can be widely used in to show static graphics and literal and lighting field.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art, to do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below, apparently, accompanying drawing in describing below only is some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is through the pattern schematic diagram on the oled substrate that obtains behind the FEOL in the prior art;
Fig. 2 is the molecular configuration figure of the common used material oxine aluminium of electron transfer layer,
Fig. 3 for the embodiment of the invention provide through the pattern schematic diagram on the oled substrate that obtains behind the FEOL;
Fig. 4 is a desired OLED device display effect schematic diagram in the embodiment of the invention one;
The pattern schematic diagram of mask plate in the ultraviolet irradiation processing procedure that provides in the embodiment of the invention one is provided Fig. 5;
Fig. 6 is the view of the embodiment of the invention one middle-ultraviolet lamp irradiation OLED device.
Embodiment
In the prior art, in the FEOL of OLED device, at first on substrate, form auxiliary electrode and transparent electrode layer, specifically can comprise steps such as cleaning, gluing, exposure, development, curing, etching, demoulding by photoetching process.Use polyimides (Polyamide then, PI) form alternate anyhow latticed insulating barrier by photoetching process and form sub-pixel to isolate strip like transparent electrode, after on direction, form cathode insulated column by photoetching with negative photoresist again perpendicular to the anode transparent electrode layer, as shown in Figure 1, be the pattern schematic diagram on the oled substrate that obtains behind the process FEOL in the prior art, wherein, the positive wire of icon 11 indication OLED pixels, the negative wire of icon 12 and 13 indication OLED pixels, design last 12 and 13 quantity and respectively be half of negative wire sum, and intersect and divide single twoly draw from the left and right sides of oled substrate respectively.
In the forming process of the pattern on above-mentioned oled substrate, each pattern all needs corresponding exposure mask plate (Mask), and the pattern complexity of mask plate, can not allow any strip electrode line and polyimide pattern and insulated column pattern defectiveness.This OLED device manufacturing method flow process complexity need be carried out repeatedly photoetching process, and needs a plurality of corresponding mask plates, alignment precision to mask plate requires also higher simultaneously, therefore, its production efficiency is low, production cost is higher, and the yields of the OLED device that obtains is lower.
The embodiment of the invention provides a kind of OLED device making method for this reason, comprising: form transparent electrode layer on substrate; On transparent electrode layer, form organic film and cathodic metal layer successively; Substrate and bonnet are fitted, finish the encapsulation of OLED device; Use ultraviolet irradiation with the OLED device of mask plate, make the organic material of the organic film of mask plate transmission region correspondence decay to set point as mask.
In addition, because the physicochemical properties restriction certain to being formed with of complex pattern of photoresist adopts IC control array of sub-pixels to realize showing complex pattern simultaneously, can make the OLED device cost higher.Therefore OLED device of the prior art is difficult in when obtaining preferably the complex pattern display effect, controls the OLED device cost preferably, is unfavorable for its extensive use.
The embodiment of the invention also provides a kind of OLED device for this reason, comprising: substrate; Be formed at the transparent electrode layer on the substrate; The organic film and the cathodic metal layer that on transparent electrode layer, form successively; The bonnet that fits with substrate; The organic material of predeterminable area is the organic material after complete attenuation or the underdamp in the described organic film; Zone in the described organic film beyond the setting regions is the normal light-emitting zone of OLED device.
It more than is the application's core concept, below in conjunction with the accompanying drawing in the embodiment of the invention, the technical scheme in the embodiment of the invention is clearly and completely described, obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills belong to the scope of protection of the invention not making the every other embodiment that is obtained under the creative work prerequisite.
Embodiment one:
The basic structure of OLED device comprises: substrate, the transparent electrode layer of substrate, the hole injection layer, hole transmission layer, luminous material layer, electron transfer layer, electron injecting layer and the cathodic metal layer that form successively on the transparent electrode layer.
Discover that through the inventor hole injection layer, hole transmission layer, luminous material layer, electron transfer layer, the electron injecting layer that are arranged between transparent electrode layer and the cathodic metal layer all are to be made of organic semiconducting materials usually, can be referred to as organic film.According to the characteristic of organic material transmission charge carrier and luminous principle, utilize ultraviolet irradiation, organic material is decayed, cardinal principle is to have a small amount of water vapor, oxygen and other gas in the packaging environment of OLED device inevitably.By the energy that ultraviolet ray provides, series reaction can take place in the organic molecular chemistry bond fission in the organic material, and product can form the responsive especially trap of electric charge.Because of organic molecular structure changes, organic film no longer possesses appropriate H OMO and LOMO value, can not effectively transmit charge carrier, can not be effectively luminous.
Common used material oxine aluminium (Alq3) with electron transfer layer is example, as shown in Figure 2, is the molecular configuration figure of oxine aluminium, and wherein, the Al-O key is a little less than the covalency in the molecule, the covalent bond that polarity is strong.Electric charge is transferred on the nitrogenous pyridine ring from oxygen containing phenol ring, comprises that C → C shifts and O → N transfer between two rings.
Because ultraviolet ray has higher energy, can provide the energy of the photochemical reaction chemical bond that generation need interrupt.For example: wavelength is the ENERGY E=N of the photon mole light quantum of 171nm
AH υ=698KJ, and the bond energy of C-O key is 364KJ/mol.By uv-visible absorption spectra, xps figure and infrared absorption spectroscopy as can be known: under ultraviolet irradiation, Alq3 has chemical bond rupture, and change of molecular structure takes place.
Therefore, in the OLED device manufacturing method that present embodiment provides, adopt mask plate or other schemes to cover to need in the OLED device zone of the normal luminous pattern that keeps, by ultraviolet irradiation to the organic material in zone can decay, the zone of being arrived by ultraviolet irradiation can be not luminous fully according to the degree of decay or low-light level is luminous, and then realize making OLED device display pattern.
Based on above-mentioned thought, the OLED device making method that the embodiment of the invention provides specifically can may further comprise the steps:
Step S101 forms transparent electrode layer on substrate;
Step S102 forms organic film and cathodic metal layer successively on transparent electrode layer;
Step S103 fits substrate and bonnet, finishes the encapsulation of OLED device;
Step S104 uses ultraviolet irradiation with the OLED device of mask plate as mask, makes the organic material of the organic film of mask plate transmission region correspondence decay to set point.
Wherein, among the step S101, described substrate can be glass substrate, forms the manufacturing process of transparent electrode layer, specifically can comprise: glass substrate cleans, and is used to remove dust and impurity on the glass baseplate surface; Coating photoresists, photoresists splash into the crack of even rubber tire and glue coating wheel, and the groove on the glue coating wheel is transferred to the transparency electrode laminar surface with photoresists, and by hot plate glass substrate is heated, and makes the solvent evaporates in the photoresists, solidify photoresists; Exposure, for covering, the photoresists that use ultraviolet line irradiation to expose make photoresists generation chemical reaction with mask plate; Develop, clean with developer solution and remove the photoresists that react, make photoresists form electrode pattern; Etching, the concrete harsh mode that can adopt is removed the transparent electrode layer that exposes, and forms the transparency electrode layer pattern; Clean, with photoresists and other impurity of removing the transparent electrode layer patterned surfaces.In the present embodiment, described transparent electrode layer is specifically as follows ITO (Indium Tin Oxides, tin indium oxide).
In addition, because the OLED device is the current drives assembly, when outside line was long or meticulous, external circuit will cause serious voltage gradient, and the voltage that really falls within the OLED device is descended, and caused the display floater luminous intensity to reduce.Because transparent electrode layer resistance is excessive, easily causes unnecessary external power consumption, so among the step S101, can also comprise the formation auxiliary electrode, its processing procedure and transparent electrode layer roughly the same do not repeat them here.Can reduce voltage gradient by the auxiliary electrode that is provided with, increase luminous efficiency, reduce driving voltage.The material of auxiliary electrode can be chromium, aluminium etc.
As shown in Figure 3, be the pattern schematic diagram of the oled substrate that obtains after the execution in step S101, wherein 31 indication positive wires can be made up of ITO or ITO+ metal; 32 indication ito transparent electrode layer anode; 33 indication ito transparent electrode layer negative pole, ito transparent electrode layer negative pole cabling can adjust according to actual conditions; 34 indication glass substrates, 35 indication negative wire ends.
Compare in present embodiment and the prior art, its main difference is, after forming the transparent electrode layer of simple graph more, need not carry out the PI processing procedure to form latticed insulating barrier, also need not the cathode insulated column processing procedure, can directly form organic film and cathodic metal layer on transparent electrode layer after substrate is carried out plasma treatment, wherein organic film specifically can comprise: hole injection layer, hole transmission layer, luminous material layer, electron transfer layer, electron injecting layer; Described cathodic metal layer can be aluminium lamination, magnesium layer or silver layer, and the material of described cathodic metal layer can also be alloy.Specifically can adopt evaporation process to form organic film and cathodic metal layer.
Among the step S103, the applying of substrate and bonnet can be carried out in pure N2 environment, can also post drier on the bonnet, and described substrate and bonnet can fit together by epoxide-resin glue, the OLED device after obtaining encapsulating.
Among the step S104,, be the designed display effect figure of OLED device referring to shown in Figure 4, wherein white portion is a light-emitting zone, can select the mask plate pattern shown in Fig. 5, wherein black region is represented the lightproof area of mask plate, and white portion is represented the transmission region of mask plate.In the present embodiment, the pattern of the transmission region of described mask plate is the pattern of the required demonstration of OLED device, the pattern that the non-transmission region of mask plate also can be set is the pattern of the required demonstration of OLED device, literal or figure that required demonstration promptly can be set are light-emitting zone, all the other zones are light-emitting zone not, the literal of required demonstration or figure also can be set be light-emitting zone not, all the other zones are light-emitting zone, and then reach the effect of display text or figure.
In the present embodiment, the mask plate that is used for ultraviolet irradiation technology can be made by the light screening material of easy processing, and concrete described mask plate can be metal mask plate, film mask plate or shading adhesive plaster.In addition, when ultraviolet irradiation, mask plate that can be special, only need to scribble pattern at the OLED device surface with the coating (as black pigment) of shading, can play the effect of mask plate, after the ultraviolet irradiation processing procedure is finished, clean the opaque of removing the OLED device surface.This scheme can reduce cost, also can the required pattern displaying effect of convenient realization.
When carrying out ultraviolet irradiation, mask plate is arranged at packaged OLED device top, wherein, suitable setting spacing can is close to or exist to described mask plate and OLED device, uses ultraviolet irradiation OLED device a period of time then.Schematic diagram referring to the ultraviolet irradiation OLED device shown in the accompanying drawing 6, wherein, the OLED device (display surface up) after the encapsulation is finished in 61 indications, 62 indication mask plates, the ultraviolet ray of 63 indication vertical irradiations, distance between 64 indication mask plates and the OLED device can see through ultraviolet part on the 65 indication mask plates.
Wherein, ultraviolet wavelength and irradiation time can be determined according to actual needs.Ultraviolet ray is meant the electromagnetic wave of wavelength between 100nm-400nm described in the present embodiment.Irradiation time generally is not less than 30 seconds, decays until not luminous fully with the organic material that will not need luminous zone, certainly, also can make the organic material underdamp of setting regions as required, realizes that low-light level is luminous.In the embodiment of the invention, also can use the x-ray bombardment bigger in addition, make the organic material decay, not repeat them here than ultraviolet energy.
After finishing above-mentioned manufacturing process, the OLED device is lighted, can be obtained needed effect.In the present embodiment, the ultraviolet irradiation processing procedure both can have been finished also visual convenient for productionly finish separately in encapsulation applying chamber, repeat no more.
In a kind of OLED device making method that present embodiment provides, by the carry out ultraviolet irradiation of mask plate to the OLED device after encapsulating, the organic material of the setting regions of OLED device is decayed, do not make it luminous or low-light level is luminous, and then can access required display effect.This scheme is behind the transparent electrode layer that forms simple graph, need not carry out the PI processing procedure to form latticed insulating barrier, also need not the cathode insulated column processing procedure, therefore can simplify production procedure, enhance productivity, reduce the use of mask plate, reduce production costs, need not high-precisionly simultaneously, can improve the yields of OLED device bit manipulation.In the OLED device that finally obtains, there is not the sub-pixel of matrix form, therefore need not sub-pixel to be lined by line scan the demonstration field that is applied to show static graphics and literal that can be preferable by integrated circuit.
Embodiment two:
The corresponding OLED device making method that provides with embodiment one, present embodiment provides a kind of OLED device that arrives of using the said method manufacturing, and specifically comprises:
Substrate; Be formed at the transparent electrode layer on the substrate;
The organic film and the cathodic metal layer that on transparent electrode layer, form successively;
The bonnet that fits with substrate;
The organic material of predeterminable area is the organic material after complete attenuation or the underdamp in the described organic film;
Zone in the described organic film beyond the setting regions is the normal light-emitting zone of OLED device.
Because present embodiment is the device embodiment of method embodiment correspondence among the embodiment one, but its similarity cross-references does not repeat them here.
In the OLED device provided by the invention, the organic material after complete attenuation or the underdamp is not luminous or low-light level is luminous, and all the other zones are normally luminous, and then realizes display text and figure.In this OLED device production process, need not can form complicated display pattern by lithographic process repeatedly, the restriction that therefore can avoid the characteristic of photoresist that complex pattern is shaped, suitable demonstration comprises the complex pattern of curve and turnover.Simultaneously, there are not latticed insulating barrier and cathode insulated column in this OLED device, there is not the array sub-pixel that forms by photoetching process repeatedly yet, need not during demonstration to adopt integrated circuit that sub-pixel is lined by line scan, therefore its cost is lower, is fit to be widely used in demonstration static graphics and literal and lighting field.
Each embodiment adopts the mode of going forward one by one to describe in this specification, and what each embodiment stressed all is and the difference of other embodiment that identical similar part is mutually referring to getting final product between each embodiment.To the above-mentioned explanation of the disclosed embodiments, make this area professional and technical personnel can realize or use the application.Multiple modification to these embodiment will be conspicuous concerning those skilled in the art, and defined herein General Principle can realize under the situation of the spirit or scope that do not break away from the application in other embodiments.Therefore, the application will can not be restricted to these embodiment shown in this article, but will meet and principle disclosed herein and features of novelty the wideest corresponding to scope.
Claims (11)
1. an OLED device making method is characterized in that, comprising:
On substrate, form transparent electrode layer;
On transparent electrode layer, form organic film and cathodic metal layer successively;
Substrate and bonnet are fitted, finish the encapsulation of OLED device;
Use ultraviolet irradiation with the OLED device of mask plate, make the organic material of the organic film of mask plate transmission region correspondence decay to set point as mask.
2. method according to claim 1 is characterized in that:
Described ultraviolet wavelength is 100nm to 400nm.
3. method according to claim 1 is characterized in that:
The time of described ultraviolet irradiation is not less than 30 seconds.
4. method according to claim 1 is characterized in that:
Described organic film comprises: hole injection layer, hole transmission layer, luminous material layer, electron transfer layer and electron injecting layer.
5. method according to claim 1 is characterized in that:
Described cathodic metal layer is aluminium lamination, magnesium layer or silver layer.
6. method according to claim 1 is characterized in that:
Described mask plate is metal mask plate, film mask plate or shading adhesive plaster.
7. method according to claim 1 is characterized in that, uses ultraviolet irradiation with the OLED device of mask plate as mask, or:
At OLED device surface coating opaque;
With described opaque is that mask uses ultraviolet irradiation OLED device.
8. method according to claim 1 is characterized in that:
The pattern of the transmission region of described mask plate is the pattern of the required demonstration of OLED device.
9. method according to claim 1 is characterized in that:
The pattern of the non-transmission region of described mask plate is the pattern of the required demonstration of OLED device.
10. method according to claim 1 is characterized in that:
The spacing of setting is close to or is existed to described mask plate and OLED device.
11. an OLED device is characterized in that, comprising:
Substrate; Be formed at the transparent electrode layer on the substrate;
The organic film and the cathodic metal layer that on transparent electrode layer, form successively;
The bonnet that fits with substrate;
The organic material of predeterminable area is the organic material after complete attenuation or the underdamp in the described organic film;
Zone in the organic film beyond the setting regions is the normal light-emitting zone of OLED device.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102222684A (en) * | 2011-06-30 | 2011-10-19 | 信利半导体有限公司 | Organic electroluminescent display and manufacture method thereof |
| CN111402739A (en) * | 2020-03-31 | 2020-07-10 | 云谷（固安）科技有限公司 | Display module and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2793373B2 (en) * | 1991-02-07 | 1998-09-03 | 出光興産株式会社 | Method for patterning organic electroluminescent device |
| CN101232081A (en) * | 2006-11-29 | 2008-07-30 | 财团法人山形县产业技术振兴机构 | Patterning method of organic electroluminescent device |
-
2010
- 2010-10-29 CN CN 201010530376 patent/CN102013457A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2793373B2 (en) * | 1991-02-07 | 1998-09-03 | 出光興産株式会社 | Method for patterning organic electroluminescent device |
| CN101232081A (en) * | 2006-11-29 | 2008-07-30 | 财团法人山形县产业技术振兴机构 | Patterning method of organic electroluminescent device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102222684A (en) * | 2011-06-30 | 2011-10-19 | 信利半导体有限公司 | Organic electroluminescent display and manufacture method thereof |
| CN102222684B (en) * | 2011-06-30 | 2013-08-07 | 信利半导体有限公司 | Organic electroluminescent display and manufacture method thereof |
| CN111402739A (en) * | 2020-03-31 | 2020-07-10 | 云谷（固安）科技有限公司 | Display module and preparation method thereof |
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Application publication date: 20110413 |