CN102012287B - Electrical pressure sensor of circular silicon film microcomputer - Google Patents
Electrical pressure sensor of circular silicon film microcomputer Download PDFInfo
- Publication number
- CN102012287B CN102012287B CN201010501581A CN201010501581A CN102012287B CN 102012287 B CN102012287 B CN 102012287B CN 201010501581 A CN201010501581 A CN 201010501581A CN 201010501581 A CN201010501581 A CN 201010501581A CN 102012287 B CN102012287 B CN 102012287B
- Authority
- CN
- China
- Prior art keywords
- circular
- thin layer
- layer
- type doping
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
The invention relates to an electrical pressure sensor of a circular silicon film microcomputer, particularly to an electrical pressure sensor structure of a microcomputer with a P-type semi-conductor silicon film layer. The lowermost layer of the sensor is provided with a glass substrate for closing a cavity, an N-type silica substrate is arranged on the glass substrate, the back surface of the N-type silica substrate, close to the glass substrate, is provided with a circular cavity, a silica film is arranged on the circular cavity, a circular P-type doping thin layer covers the whole silica film, the upper surface of a silicon chip is covered with a silica dioxide layer, which is around for a circle, and is evenly distributed to connect 16 metal electrodes which not only can be used for exciting electric current, but also for measuring voltage are connected and distributed around the circular P-type doping thin layer. The electrical pressure sensor is characterized in that the circular P-type doping thin layer is used as a sensing layer, and senses the pressure according to the principle that the resistance ratio of the circular P-type doping thin layer is changed with the pressure.
Description
Technical field
The invention provides a kind of micro-electromechanical pressure transducer structure of circular P-type semiconductor silicon thin layer of on circular N type silicon thin film, making, utilize electrical impedance tomography (EIT) measuring principle to carry out sensing and calculate, belong to field of micro electromechanical technology as sensing layer.
Technical background
Pressure transducer is one of important sensor, and purposes is very widely arranged.Present most of pressure transducers adopt the measuring method of lumped parameter, for example, detect the method that voltage dependent resistor (VDR) changes or capacity plate antenna changes.The symmetry of voltage dependent resistor (VDR) requires high, and there is the little and nonlinear problem of capacitance change in the plate condenser structure.
P type silicon has apparent in view piezoresistive effect, is usually used in tension stress or compressive stress that sensing material is subjected to.Traditional micro-electromechanical pressure transducer adopts the pressure drag of being made by P type silicon to come sensing, and pressure drag is produced on the position of pressure sensing membrane stress maximum, for example at the boundary of pressure sensing film.When the pressure in the external world makes sense film generation deformation, also make these pressure drags be subjected to the effect of stress and cause the size of its resistance to change.Resistance bridge is usually adopted in detection for these piezoresistive transducers, but, be usually located at the pressure sensing thin film boundary because be used for the pressure drag of sensing, the discreteness of technology makes between these resistance and produces mismatch, and therefore makes the resistance bridge detection initial error occur.
When adopting the P-type semiconductor silicon thin layer as sensing material, the thin layer upper stress that deformation produced distributes and will change, and this stress distribution variation will cause the layer resistivity distribution to change.
Electrical impedance tomography (EIT) technology adopts current excitation/voltage measurement, and calculates the resistivity distribution of material to be detected by imaging algorithm.
The variation of film resiativity is come out by the EIT technology for detection, can access the deformation of film each point, and therefore can reflect extraneous institute applied pressure.
Summary of the invention
Technical matters: the purpose of this invention is to provide a kind of circular silicon thin-film micro-electromechanical pressure transducer, on circular N type silicon thin film, make the micro-electromechanical pressure transducer structure of circular P-type semiconductor silicon thin layer, have that sensor construction is simple, the processing technology characteristic of simple as sensing layer.
Technical scheme: the orlop of circular silicon thin-film micro-electromechanical pressure transducer of the present invention is a glass substrate, on glass substrate, be provided with N type silicon substrate, in the middle of N type silicon substrate and between the glass substrate, be provided with circular cavity, circular P type doping thin layer covers the whole silicon thin film that is positioned at the N type silicon substrate of circular cavity top, micro-electromechanical pressure transducer structure as sensing layer, and the thickness of P type doping thin layer equals this silicon thin film thickness half, adopts circular P type doping thin layer as sensing layer; Upper surface at N type silicon substrate and circular P type doping thin layer has covered silicon dioxide layer, is promptly to can be used for the metal electrode that current excitation also can be used for voltage measurement on the silicon dioxide layer.
The P type doping thin layer of described circle, the P type doping thin layer in one week along circle, evenly distribution is connecting 16 and promptly can be used for the metal electrode that current excitation also can be used for voltage measurement; Utilize the resistivity distribution of circular P type doping thin layer to carry out pressure sensing with the principle that the pressure variation changes.
Its basic functional principle is: when ambient pressure causes the silicon thin film distortion, because piezoresistive effect causes the P-type semiconductor silicon thin layer on the silicon thin film to change along the resistivity of radial direction each point, utilize EIT technique computes P-type semiconductor silicon thin layer resistivity distribution in this case, obtain the deformation quantity of silicon thin film afterwards.Because the size of deformation is directly relevant with pressure, obtain force value thus.Adopt the micro-electromechanical pressure transducer of pressure drag sensing different with tradition, the variation that the structure that the present invention proposes is utilized whole sensing layer material resistivity distribution force value is to external world carried out sensing and is characterized.Simultaneously, because the EIT technology is a basic value with the background resistivity distribution, therefore, basic sum of errors asymmetry can be offset.Has simple, the processing technology characteristic of simple of sensor construction.
Beneficial effect: great advantage of the present invention is that sensor construction is simple, and is low to the sensitivity of processing technology.Because adopt resistivity distribution to change the deformation that detects silicon thin film, therefore, be to detect for the relative value that changes.Be different from traditional based on specified point parameter sampling or to the sensing mode of lumped parameter sampling, it is that whole sensitive face is calculated, and therefore, makes error and averages out, and has reduced systematic error.Simultaneously, the background resistivity distribution can be used as basic reference, will survey resistivity distribution and background resistivity is subtracted each other, filtering initial process error.Intelligent based on the easier realization of the information processing method of algorithm.
Description of drawings
Fig. 1 sensor construction synoptic diagram,
Fig. 2 is an A-A sectional drawing among Fig. 1.
Wherein, the 101st, N type silicon substrate; The 102nd, the P type silicon thin layer of the circle that the employing doping techniques is made; The 103rd, silicon dioxide layer; The 104th, connect the circular P type silicon thin layer and the connecting hole of metal electrode; The 105th, the metal electrode of current excitation and voltage detecting amounts to 16; The 106th, circular cavity; 107 are used for the glass substrate of sealed cavity.
Specific embodiments
The invention provides a kind of micro-electromechanical pressure transducer of circular P-type semiconductor silicon thin layer as sensing layer of making on circular N type silicon thin film, structural representation as shown in Figure 1.The orlop of sensor is the glass substrate 107 that is used for closed cavity 106, it on the glass substrate 107 N type silicon substrate 101, N type silicon substrate 101 back sides near glass substrate 107 make circular cavity 106, on circular cavity 106, be silicon thin film, circular P type doping thin layer 102 covers whole silicon thin film, and the thickness of P type doping thin layer 102 equals silicon thin film thickness half, upper surface at silicon chip has covered silicon dioxide layer 103, along P type doping 102 1 weeks of thin layer of circle, evenly distribution is connecting 16 and promptly can be used for the metal electrode 105 that current excitation also can be used for voltage measurement, and metal electrode is connected with P type doping thin layer 102 by the aperture on the silicon dioxide 104.
Sensor of the present invention has multiple method for making, describes to adopt micro-electromechanical processing technology to make sensor of the present invention here.
At first select the N type soi wafer of 0.2 micron of semiconductor layer thickness.Form circular P type doping thin layer 102 figures by photoetching process after the oxide layer of heat growth 100 nano thickness.Band glue carries out the boron ion at circular P type doping thin layer 102 and injects, and doping content is controlled at 5E18/cm
3About, 0.1 micron of junction depth.Low temperature deposition 300 nanometer titanium dioxide silicon layers 103.Adopt photoetching process to form electrode connecting hole 104.Adopt sputtering technology at surface deposition layer of metal aluminium, photoetching forms 16 metal electrodes 105.Adopt the deep reaction ion etching etching SOI sheet back side, form circular cavity 106, the silicon dioxide layer that etching proceeds to the SOI sheet stops.Remove the silicon dioxide on the cavity.As the seal glass substrate, the bonding that adopts electrostatic bonding to carry out N type silicon substrate 101 and glass substrate 107 under vacuum forms airtight to circular cavity 106 with PREX7740 glass.
Claims (2)
1. circular silicon thin-film micro-electromechanical pressure transducer, the orlop that it is characterized in that this sensor is glass substrate (107), on glass substrate (107), be provided with N type silicon substrate (101), in the middle of N type silicon substrate (101) and between the glass substrate (107), be provided with circular cavity (106), circular P type doping thin layer (102) covers the whole silicon thin film that is positioned at the N type silicon substrate (101) of circular cavity (106) top, and the thickness of circular P type doping thin layer (102) equals this silicon thin film thickness half, adopts circular P type doping thin layer (102) as sensing layer; Upper surface at the P of circle type doping thin layer (102) has covered silicon dioxide layer (103), on the silicon dioxide layer is promptly to can be used for the metal electrode (105) that current excitation also can be used for voltage measurement.
2. circular silicon thin-film micro-electromechanical pressure transducer according to claim 1, the P type doping thin layer (102) that it is characterized in that described circle, P type doping thin layer (102) in one week along circle, evenly distribution is connecting 16 and promptly can be used for the metal electrode (105) that current excitation also can be used for voltage measurement; Utilize the resistivity distribution of circular P type doping thin layer (102) to carry out pressure sensing with the principle that the pressure variation changes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010501581A CN102012287B (en) | 2010-09-29 | 2010-09-29 | Electrical pressure sensor of circular silicon film microcomputer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010501581A CN102012287B (en) | 2010-09-29 | 2010-09-29 | Electrical pressure sensor of circular silicon film microcomputer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102012287A CN102012287A (en) | 2011-04-13 |
| CN102012287B true CN102012287B (en) | 2011-12-14 |
Family
ID=43842535
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010501581A Expired - Fee Related CN102012287B (en) | 2010-09-29 | 2010-09-29 | Electrical pressure sensor of circular silicon film microcomputer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102012287B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102410894A (en) * | 2011-08-02 | 2012-04-11 | 中国矿业大学 | Interface pressure distribution testing sensing element |
| CN109341514A (en) * | 2018-12-11 | 2019-02-15 | 中国地质大学（武汉） | A kind of Novel resistor foil gauge and strain measurement method |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5710980A (en) * | 1980-06-23 | 1982-01-20 | Mitsubishi Electric Corp | Semiconductor pressure detecting device |
| JP4306162B2 (en) * | 2001-08-22 | 2009-07-29 | 株式会社デンソー | Semiconductor device and manufacturing method thereof |
| DE10156833A1 (en) * | 2001-11-20 | 2003-05-28 | Boehm Stephan | Electrode for biomedical measurements has contact plate connected to line driver high impedance input and current source current output, line driver, current source close to contact plate |
| CN101266176A (en) * | 2008-04-18 | 2008-09-17 | 中国科学院上海微系统与信息技术研究所 | Si-Si bonding isolator upper silicon high-temperature pressure sensor chip and manufacture method |
| CN201811815U (en) * | 2010-09-29 | 2011-04-27 | 东南大学 | Circular silicon film micro-electro-mechanical pressure sensor based on heat loss working mode |
-
2010
- 2010-09-29 CN CN201010501581A patent/CN102012287B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN102012287A (en) | 2011-04-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN201653604U (en) | Pressure sensor | |
| CN106124117B (en) | A kind of double cavity pressure meter chips and its manufacturing process | |
| CN102998037B (en) | Dielectric isolation piezoresistive pressure sensor and method for manufacturing same | |
| WO2017028466A1 (en) | Mems strain gauge chip and manufacturing process therefor | |
| CN104034454A (en) | Multi-physical measurement sensor chip and production method thereof | |
| US20190113411A1 (en) | Pressure gauge chip and manufacturing process thereof | |
| CN101881676B (en) | Hexagonal silicon membrane piezoresistive pressure sensor for embedded monocrystal silicon cavity and method | |
| CN104062464B (en) | MEMS piezoresistive acceleration and pressure integrated sensor and manufacturing method thereof | |
| CN105241600A (en) | MEMS pressure meter chip and manufacturing process thereof | |
| CN102951592A (en) | Multilayered nonon membrane in a mems sensor | |
| CN102798498A (en) | Multi-range integrated pressure sensor chip | |
| CN103983395B (en) | A kind of micropressure sensor and preparation thereof and detection method | |
| US8754453B2 (en) | Capacitive pressure sensor and method for manufacturing same | |
| CN203940940U (en) | A kind of sensor chip for many physical quantities | |
| CN109141691A (en) | A kind of linkage membrane capacitance formula presser sensor chip and its manufacturing method | |
| CN109489843B (en) | High-sensitivity sensor and preparation method thereof | |
| CN104089727A (en) | Temperature-integrated high-performance pressure sensor chip and manufacturing method thereof | |
| CN106644195A (en) | High-temperature and large-range silicon-sapphire pressure sensor structure | |
| CN201811815U (en) | Circular silicon film micro-electro-mechanical pressure sensor based on heat loss working mode | |
| CN103364120A (en) | Silver-tin eutectic vacuum bonding metal variant-type MEMS pressure transistor and manufacturing method thereof | |
| CN103196596B (en) | Nanometer film pressure sensor based on sacrificial layer technology and manufacturing method thereof | |
| CN114235232B (en) | MEMS pressure sensor and preparation method thereof | |
| CN102012287B (en) | Electrical pressure sensor of circular silicon film microcomputer | |
| CN105136352A (en) | Capacitive pressure sensor and preparation method thereof | |
| CN105668500B (en) | High-sensitivity wide-range force sensor and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SOWTHEAST UNIV. Effective date: 20140623 Owner name: JIANGSU HAIJAN CO., LTD. Free format text: FORMER OWNER: SOWTHEAST UNIV. Effective date: 20140623 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 210096 NANJING, JIANGSU PROVINCE TO: 226600 NANTONG, JIANGSU PROVINCE |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20140623 Address after: 226600 Nantong, Haian Qu Qu Qu Town, the second floor Road, No. 198 Patentee after: Jiangsu Haijian Co., Ltd. Patentee after: Southeast University Address before: 210096 Jiangsu city Nanjing Province four pailou No. 2 Patentee before: Southeast University |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111214 Termination date: 20190929 |