CN102011174B - Air-cooled sleeve for straight pull type silicon single crystal growing furnace - Google Patents
Air-cooled sleeve for straight pull type silicon single crystal growing furnace Download PDFInfo
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- CN102011174B CN102011174B CN2010105654174A CN201010565417A CN102011174B CN 102011174 B CN102011174 B CN 102011174B CN 2010105654174 A CN2010105654174 A CN 2010105654174A CN 201010565417 A CN201010565417 A CN 201010565417A CN 102011174 B CN102011174 B CN 102011174B
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- single crystal
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- sleeve
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Abstract
The invention discloses an air-cooled sleeve for a straight pull type silicon single crystal growing furnace. The air-cooled sleeve comprises a first flange, an inner sleeve and an outer sleeve which are coaxially arranged, wherein an aeration hole and a first annular groove are formed on a plate body of the first flange; the inner sleeve is fixed on an inner side wall of the plate body of the first flange; the first annular groove and the inner sleeve form a buffer cavity; the aeration hole is communicated with the buffer cavity; the outer sleeve is fixed on a lower end surface of the plate body of the first flange and is positioned outside the inner sleeve; an aeration gap is formed between the outer sleeve and the inner sleeve; and the aeration gap is communicated with the buffer cavity. The air-cooled sleeve has a simple structure and a reasonable design, can improve the stability of a system, effectively improve the growth speed of a silicon single crystal and improve the production efficiency, and is widely applied to semiconductor silicon single crystal growth equipment and other silicon single crystal growth equipment.
Description
Technical field
The invention belongs to silicon single-crystal and prepare equipment technical field, be specifically related to a kind of vertical pulling silicon single crystal growing furnace and use the air cooling cover.
Background technology
Silicon single crystal growing furnace is the specific equipment that polysilicon is changed into silicon single crystal; The growth of silicon single-crystal is the polycrystalline starting material to be put into crucible in that vacuum work is indoor; Through well heater starting material are melted, then, grow the ideal silicon single-crystal through seed crystal guiding, the method for pulling up that makes progress.In the silicon single-crystal growth process process that upwards lifts continuously; In order to guarantee the timely eliminating of stablizing growth fast and volatile matter of silicon single-crystal; In the whole growth technological process, process gas (high-purity argon gas commonly used) is charged into from the single crystal growing furnace top, discharge from the single crystal growing furnace bottom through vacuum pump.
Summary of the invention
The purpose of this invention is to provide a kind of vertical pulling silicon single crystal growing furnace and use the air cooling cover, its air cooling is effective, can guarantee that process gas rationally charges into ideal position equably, and then effectively improve the speed of growth of silicon single-crystal.
The technical scheme that the present invention adopted is; A kind of vertical pulling silicon single crystal growing furnace is used the air cooling cover, comprises flange one, inner sleeve and the outer sleeve of coaxial setting, has the aeration aperture of a radial direction on the disk body of flange one; Inner sleeve is fixed on the internal side wall of flange one disk body; Disk body inboard at flange one has annular recesses one, and annular recesses one forms annular and airtight cushion chamber with inner sleeve, and aeration aperture communicates with cushion chamber; Outer sleeve is fixed on the disk body lower surface of flange one and is positioned at the outside of inner sleeve, forms annular inflation slit between outer sleeve and the inner sleeve, and the inflation slit communicates with said cushion chamber.
The upper end of outer sleeve is fixed with flange two; Flange two and flange one are connected through bolt; On flange two and the inboard that is positioned at outer sleeve be evenly distributed ringwise and have a plurality of first tap holes; Having ring groove on the disk body of flange one and between cushion chamber and flange two, and cushion chamber and inflation slit are being communicated through ring groove and first tap hole.
In the inflation slit, be welded with the annular dividing plate outside between sleeve and the inner sleeve, evenly opened a plurality of second diffluences hole on the dividing plate.
Extend telescopic below, inner sleeve lower end, and be fixed with pod in the bottom of inner sleeve, pod is up-small and down-big conical by its shape.
The height of cushion chamber is greater than the height of aeration aperture.
Inner sleeve and flange one are welded to connect.
Have the annular recesses two that is used for mounting flange two on the lower surface of flange one, flange two is arranged in the annular recesses two.
Outer sleeve and flange two are welded to connect.
Vertical pulling silicon single crystal growing furnace of the present invention has been formed double-layer sleeve structure with the inner sleeve and the outer sleeve of air cooling cover; Flange one is provided with cushion chamber; Through first tap hole and second diffluence hole process gas is evenly shunted, pod also can play good guide effect again; Can set the overall length of vertical pulling silicon single crystal growing furnace according to the silicon single-crystal growth process needs simultaneously, to guarantee to obtain the ideal technology technology with the air cooling cover.This vertical pulling silicon single crystal growing furnace is with the stability that can improve the vertical pulling silicon single crystal growing furnace system of air cooling cover, and can improve the speed of growth of silicon single-crystal effectively, enhances productivity.
Description of drawings
Fig. 1 is the structural representation of vertical pulling silicon single crystal growing furnace of the present invention with the air cooling cover;
Wherein, 1. flange one, 2. aeration aperture, and 3. cushion chamber, 4. inner sleeve, 5. second diffluence hole, 6. first tap hole, 7. flange two, 8. dividing plate, 9. outer sleeve, 10. inflation slit, 11. pods.
Embodiment
Below in conjunction with accompanying drawing and embodiment the present invention is elaborated.
As shown in Figure 1, vertical pulling silicon single crystal growing furnace of the present invention is used the air cooling cover, comprises flange 1, inner sleeve 4 and outer sleeve 9; Flange 1, inner sleeve 4 and outer sleeve 9 threes are coaxial setting, wherein, have the aeration aperture 2 of a radial direction on the disk body of flange 1; Inner sleeve 4 is welded on the internal side wall of flange one 1 disk bodies; Disk body inboard at flange 1 has annular recesses one, and this annular recesses one forms annular and airtight cushion chamber 3 with inner sleeve 4, and aeration aperture 2 communicates with cushion chamber 3.For making 3 pairs of process gas good buffer effect that charge into from aeration aperture 2 of cushion chamber, the height of cushion chamber 3 is greater than the height of aeration aperture 2.Outer sleeve 9 is fixed on the disk body lower surface of flange 1 and is positioned at the outside of inner sleeve 4; Like this; Outer sleeve 9 has been formed double-layer sleeve structure with inner sleeve 4, forms annular inflation slit 10 outside between sleeve 9 and the inner sleeve 4, and inflation slit 10 communicates with cushion chamber 3.
In this embodiment, outer sleeve 9 is fixedly connected on the flange 1 through flange 27.Have the annular recesses two that is used for mounting flange 27 on the lower surface of flange 1, flange 27 is arranged in the annular recesses two.The upper end of outer sleeve 9 is welded with flange 27, and flange 27 and flange 1 are connected through bolt.On flange 27 and the inboard that is positioned at outer sleeve 9 be evenly distributed ringwise and have a plurality of first tap holes 6; Having ring groove on the disk body of flange 1 and between cushion chamber 3 and flange 27; And cushion chamber 3 and inflation slit 10 are communicated through said ring groove and first tap hole 6; After guaranteeing that process gas gets into from aeration aperture 2,, can enter into inflation slit 10 through equally distributed a plurality of first tap holes 6 through the buffering of cushion chamber 3.
In inflation slit 10, be welded with annular dividing plate 8 between sleeve 9 and the inner sleeve 4 outside, evenly opened a plurality of second diffluences hole 5 on the dividing plate 8, and made the process gas more even distribution through second diffluence hole 5.
The extend below of sleeve 9, the lower end of inner sleeve 4, and be fixed with pod 11 in the bottom of inner sleeve 4, pod 11 is up-small and down-big conical by its shape.When discharged in inflation slit 10, pod 11 played the effect of guiding shunting at process gas.
Vertical pulling silicon single crystal growing furnace of the present invention is simple with the air cooling nested structure; Reasonable in design, easy to use, the stability that can improve system also can improve the speed of growth of silicon single-crystal effectively; Enhance productivity, in semiconductor silicon single crystal growth apparatus and other single crystal growth apparatus.
Claims (7)
1. a vertical pulling silicon single crystal growing furnace is used the air cooling cover; It is characterized in that; The flange one (1), inner sleeve (4) and the outer sleeve (9) that comprise coaxial setting; Have the aeration aperture (2) of a radial direction on the disk body of said flange one (1), said inner sleeve (4) is fixed on the internal side wall of said flange one (1) disk body, has annular recesses one in the disk body inboard of said flange one (1); Said annular recesses one forms annular and airtight cushion chamber (3) with inner sleeve (4), and said aeration aperture (2) communicates with said cushion chamber (3); Said outer sleeve (9) is fixed on the disk body lower surface of flange one (1) and is positioned at the outside of inner sleeve (4); Form annular inflation slit (10) between said outer sleeve (9) and the inner sleeve (4), said inflation slit (10) communicates with said cushion chamber (3); The upper end of said outer sleeve (9) is fixed with flange two (7); Said flange two (7) and said flange one (1) are connected through bolt; Go up and the inboard that is positioned at said outer sleeve (9) is evenly distributed ringwise and has a plurality of first tap holes (6) at said flange two (7); On the disk body of flange one (1) and be positioned between cushion chamber (3) and the flange two (7) and have ring groove, and make cushion chamber (3) and inflate slit (10) and communicate through said ring groove and first tap hole (6).
2. use the air cooling cover according to the said vertical pulling silicon single crystal growing furnace of claim 1; It is characterized in that; In the said inflation slit (10), be welded with annular dividing plate (8) between sleeve (9) and the inner sleeve (4) outside, evenly opened a plurality of second diffluences hole (5) on the said dividing plate (8).
3. use the air cooling cover according to the said vertical pulling silicon single crystal growing furnace of claim 2; It is characterized in that; The below in said outer sleeve (9) is stretched out in said inner sleeve (4) lower end; And being fixed with pod (11) in the bottom of said inner sleeve (4), said pod (11) is up-small and down-big conical by its shape.
4. use the air cooling cover according to claim 1,2 or 3 said vertical pulling silicon single crystal growing furnaces, it is characterized in that, the height of said cushion chamber (3) is greater than the height of said aeration aperture (2).
5. use the air cooling cover according to claim 1,2 or 3 said vertical pulling silicon single crystal growing furnaces, it is characterized in that, said inner sleeve (4) is welded to connect with said flange one (1).
6. use the air cooling cover according to claim 1,2 or 3 said vertical pulling silicon single crystal growing furnaces; It is characterized in that; Have the annular recesses two that is used for mounting flange two (7) on the lower surface of said flange one (1), said flange two (7) is arranged in the said annular recesses two.
7. use the air cooling cover according to claim 1,2 or 3 said vertical pulling silicon single crystal growing furnaces, it is characterized in that, said outer sleeve (9) is welded to connect with said flange two (7).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105654174A CN102011174B (en) | 2010-11-30 | 2010-11-30 | Air-cooled sleeve for straight pull type silicon single crystal growing furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105654174A CN102011174B (en) | 2010-11-30 | 2010-11-30 | Air-cooled sleeve for straight pull type silicon single crystal growing furnace |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102011174A CN102011174A (en) | 2011-04-13 |
| CN102011174B true CN102011174B (en) | 2012-07-25 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010105654174A Expired - Fee Related CN102011174B (en) | 2010-11-30 | 2010-11-30 | Air-cooled sleeve for straight pull type silicon single crystal growing furnace |
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| CN (1) | CN102011174B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105603520B (en) * | 2016-01-20 | 2018-10-30 | 西安交通大学 | A kind of high speed single-crystal growing apparatus and method |
| CN110528063A (en) * | 2019-09-11 | 2019-12-03 | 上海新昇半导体科技有限公司 | A kind of crystal growing apparatus |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN200953659Y (en) * | 2006-09-14 | 2007-09-26 | 西安理工大学 | Double-layer quartz pipe water cooled sealing structure |
| CN201890950U (en) * | 2010-11-30 | 2011-07-06 | 江苏华盛天龙光电设备股份有限公司 | Air-cooling jacket for straight pull type silicon single crystal growing furnace |
-
2010
- 2010-11-30 CN CN2010105654174A patent/CN102011174B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN200953659Y (en) * | 2006-09-14 | 2007-09-26 | 西安理工大学 | Double-layer quartz pipe water cooled sealing structure |
| CN201890950U (en) * | 2010-11-30 | 2011-07-06 | 江苏华盛天龙光电设备股份有限公司 | Air-cooling jacket for straight pull type silicon single crystal growing furnace |
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| Publication number | Publication date |
|---|---|
| CN102011174A (en) | 2011-04-13 |
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Granted publication date: 20120725 Termination date: 20181130 |
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| CF01 | Termination of patent right due to non-payment of annual fee |