CN102004005A - Chip temperature sensing device and temperature measurement method - Google Patents
Chip temperature sensing device and temperature measurement method Download PDFInfo
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- CN102004005A CN102004005A CN2009101947864A CN200910194786A CN102004005A CN 102004005 A CN102004005 A CN 102004005A CN 2009101947864 A CN2009101947864 A CN 2009101947864A CN 200910194786 A CN200910194786 A CN 200910194786A CN 102004005 A CN102004005 A CN 102004005A
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Abstract
The invention discloses a chip temperature sensing device and a temperature measurement method. The chip temperature sensing device comprises a linear structure positioned in a chip and made of metal material, and the linear structure and a redundant structure in the chip are positioned in a redundant area adjacent to a functional circuit in the chip, or the linear structure is a redundant structure adjacent to the functional circuit. The chip temperature sensing device has a simple structure, and the corresponding temperature measurement method can acquire an accurate temperature measurement value without increasing the area of the chip.
Description
Technical field
The present invention relates to the reliability testing field, particularly chip temperature sensing device and temp measuring method.
Background technology
The development of semiconductor fabrication makes chip size further reduce, and the device density on the chip further increases, thereby can realize greater functionality in the very little chip of area.But the problem of thereupon bringing is that the working temperature of chip is also more and more higher.Correspondingly, chip just becomes the emphasis of concern serviceable life, shows after deliberation, and the serviceable life of chip is with the temperature rising exponentially downward trend of device on the chip.
Chip all can be guaranteed its reliability through a series of test as last dispatching from the factory, and the burn-in test by wherein, or is called accelerated test (accelerated test), and whether adhere to specification serviceable life that can detection chip.Tend to choose the analog operation environment of chips such as high temperature, high pressure, high humility in the burn-in test, high temperature, high pressure, high humility etc. as speedup factor, are simulated the chip purpose in serviceable life at short notice exactly to reach.
For example, in the burn-in test under the hot environment, the test environment temperature is far above the normal working temperature of chip, in the process that obtains ageing test result, and the actual temperature of the test environment temperature of regular meeting during chip during as test with burn-in test.During test, along with device density on the chip increases, power consumption can increase, and causes the actual temperature of chip internal to be higher than the test environment temperature but in fact.In addition, in the High Temperature High Pressure test, higher test voltage can further improve the actual temperature of chip, that is to say on chip this moment that device works being higher than under the test environment temperature.At this moment, if only come the serviceable life of analog chip under normal working temperature, will influence precision of test result with described test environment temperature.Thereby the temperature of measured chip, especially chip internal just seems particularly important exactly.
Moreover, when the chip operate as normal, need control, damage because of internal temperature is too high, realize control, also need at first accurately to obtain the internal temperature of chip chip temperature to prevent chip to chip temperature.
Prior art has the measuring method of temperature in the chip to be mentioned in the Chinese patent application 200480034708.3 for example, is embedded in the output of the ring oscillator in the chip by measurement, and comes the computing chip internal temperature according to described output valve.Also have and mention among the Chinese patent 200410045642.x for example, utilized the relation of diode drop and chip temperature.
Yet, the temp measuring method of for example above-mentioned prior art of giving an example, perhaps need to construct special-purpose circuit structure and corresponding measurement mechanism, perhaps when thermometric, need meticulous artificial control, how can just can obtain the focus that measured temperature comparatively accurately just becomes present research with comparatively simple device or structure.
Summary of the invention
The present invention solves be prior art to accurate measured chip, the problem of the demand of chip internal temperature especially.
For addressing the above problem, the invention provides a kind of chip temperature sensing device, the linear structure that comprises the metal material that is positioned at chip internal, the redundancy structure of described linear structure and chip internal is positioned at the chip internal redundant area adjacent with functional circuit jointly, and perhaps described linear structure is the redundancy structure adjacent with described functional circuit.
Alternatively, the linear structure of described metal material is the long line of metal, and it comprises four exits, and described exit links to each other with chip pin.
Alternatively, the linear structure of described metal material is the metal broken line, and it comprises four exits, and described exit links to each other with chip pin.。
Alternatively, the linear structure of described metal material is many layer metal wire of striding with stack architecture, comprises the through hole between multiple layer metal lines and double layer of metal lines.
Correspondingly, the present invention also provides a kind of chip temp measuring method based on said chip temperature sensing device, comprising:
Obtain the temperature variant relation of resistance in the chip temperature sensing device;
Measure the resistance value of described chip temperature sensing device under the current environment;
In conjunction with the temperature variant relation of described resistance, and measured resistance value, obtain the temperature of current chip temperature sensing device, as the temperature of its adjacent chips interior zone.
Compared with prior art, said chip temperature sensing device and temp measuring method have the following advantages: described chip temperature sensing device is simple linear structure, and be in the adjacent redundant area of chip internal and functional circuit, it neither can produce the functional circuit of chip internal and disturb, also need not circuit structure as design specialized as the prior art, and because near the functional circuit of chip internal, thus can be under the situation that does not increase chip area accurate perception chip internal temperature variation.
Described temp measuring method based on the chip temperature sensing device, utilized the temperature variant characteristic of metallic resistance meeting, by the temperature variant relation of the resistance that obtains the chip temperature sensing device, and obtain the chip internal temperature in conjunction with measured resistance value, thereby the chip internal temperature value that is obtained is also comparatively accurate.
Description of drawings
Fig. 1 is the position view of a kind of embodiment in chip of chip temperature sensing device of the present invention;
Fig. 2 a is the structure enlarged diagram of empty frame 100 among Fig. 1;
Fig. 2 b is the structure enlarged diagram of empty frame 101 among Fig. 1;
Fig. 3 to Fig. 5 is the structure alternate embodiments synoptic diagram of Fig. 1 chips temperature sensing device;
Fig. 6 is a kind of embodiment process flow diagram that the present invention is based on the temp measuring method of chip temperature sensing device;
Fig. 7 the present invention is based on the temperature variant synoptic diagram that concerns of resistance in a kind of embodiment chips temperature sensing device of temp measuring method of chip temperature sensing device.
Embodiment
According to the theory of solid state physics, when temperature T greater than 0.5 θ
DThe time, the electricalresistivity of metal and the relation of temperature T can be used following formulate:
Wherein, θ
DBe the Debye temperature of metal, it is a constant concerning a certain metal for it.For example, for copper (Cu), its Debye temperature is 343K, and for aluminium (Al), its Debye temperature is 428K.Correspondingly, for copper, 0.5 θ
D=171.5K; For aluminium, 0.5 θ
D=214K is lower than 0 ℃.Formula (1) has disclosed in fact, to a certain metal, (high temperature of chip burn-in test generally is 125 ℃ under normal temperature and high temperature, usually can be) above 150 ℃, its electricalresistivity and temperature T are linear, more particularly, to a certain metal, its electricalresistivity is linear the increase along with the rising of temperature T.
Based on above explanation,, can obtain temperature change value comparatively accurately if with the carrier of metallic resistance as perception chip internal temperature variation.
Can find by further analysis,, also exist usually to have the redundant area of redundancy structure at the functional circuit periphery, zone or the adjacent of chip to chip structure.These redundancy structures are normally considered and (major part is some metal wires or metal pattern) of setting for the design factors such as wiring density of chip.Thereby if can utilize the area of redundant area, with the linear structure of the metal material in original redundancy structure or design the linear structure of some metal materials in redundant area, just can on the basis that does not increase the original area of chip, form the chip temperature sensing device at chip internal.Behind the resistance of measuring the linear structure that obtains these metal materials that can be used as the chip temperature sensing device, just can calculate the temperature variation that obtains chip internal by some.
Fig. 1 is the position view of a kind of embodiment in chip of chip temperature sensing device of the present invention.With reference to shown in Figure 1, chip with chip temperature sensing device comprises functional circuit zone and redundant area, described functional circuit zone is the zone that some concrete functional circuits are for example realized the circuit place of functions such as computing, control, and some redundancy structures in the redundant area just can be used as the chip temperature sensing device.For example, the linear structure of the metal material at empty frame 100 places is exactly a kind of example wherein.
Shown in Fig. 2 a, the linear structure of the metal material at empty frame 100 places is the long line of metal.Shown in Fig. 1 and Fig. 2 a, the long line of these metals at empty frame 100 places is not link to each other with any circuit at the end points place, and since the long line of metal at empty frame 100 places near the functional circuit zone, thereby its temperature can be similar to and thinks the temperature that equals the functional circuit zone.When obtaining the temperature at empty frame 100 places, the temperature in functional circuit zone also just obtains naturally.The actual process that obtains temperature is that the long line of described metal is drawn into two ends or four ends, measures temperature by the resistance conversion on it, and its detailed process general is in the back about the middle detailed description of method of testing.
Shown in Fig. 1 and Fig. 2 b, if there are not the long lines of this metal in the redundancy structure, also for example two at empty frame 101 places can be intermeshed but disjunct metal wire links up, be formed with the metal wire of some length.The linear structure of described metal material as the chip temperature sensing device can also have other various ways.
For example, with reference to shown in Figure 3, the linear structure of described metal material can be the above-mentioned metal straight line of mentioning of drawing four ends, and four exits of described metal straight line link to each other with the pin on the chip.
Again for example, with reference to shown in Figure 4, the linear structure of described metal material can be for drawing the metal broken line of four ends, and four exits of described metal broken line link to each other with the pin on the chip.
In addition, the linear structure of described metal material can also comprise the through hole between multiple layer metal lines and double layer of metal lines for many layer metal wire of striding with stack architecture.For example with reference to shown in Figure 5, the linear structure of described metal material comprises between multiple layer metal line M4～M1, the every double layer of metal line having connecting through hole from top to bottom successively, is through hole 3 between M4 and the M3, is through hole 2 between M3 and the M2, is through hole 1 between M2 and the M1.The two ends of metal wire M4 are as the exit of described linear structure, and described exit links to each other with pin on the chip.In addition, metal wire M4 also can comprise four exits, and described exit links to each other with chip pin.
The above-mentioned chip temperature sensing device that is positioned at chip internal has been arranged, just can obtain the temperature of chip internal by a series of measurement and calculation procedure.
With reference to shown in Figure 6, a kind of embodiment that the present invention is based on the chip temp measuring method of chip temperature sensing device comprises:
Step s1 obtains the temperature variant relation of resistance in the chip temperature sensing device;
Step s2, the resistance value of described chip temperature sensing device under the measurement current environment;
Step s3 in conjunction with the temperature variant relation of described resistance, and measured resistance value, obtains the temperature of current chip temperature sensing device, as the temperature of its adjacent chips interior zone.
Come above-mentioned temp measuring method is described further below in conjunction with a concrete example to the chip internal thermometric.
In conjunction with Fig. 1 and shown in Figure 6, do not power up at chip under the situation of work, when first temperature T 1, measure the resistance value R1 of metal wire in the empty frame 100, when second temperature T 2, measure the resistance value R2 of metal wire in the empty frame 100 then, when second temperature T 3, measure the resistance value R3 of metal wire in the empty frame 100, when second temperature T 4, measure the resistance value R4 of metal wire in the empty frame 100.
With reference to shown in Figure 7, with the temperature is horizontal ordinate, resistance value is an ordinate, make up the temperature variant graph of a relation of resistance, the resistance value R1 corresponding data point 11 that when temperature T 1, records, the resistance value R2 corresponding data point 12 that when temperature T 2, records, the resistance value R3 corresponding data point 13 that when temperature T 3, records, the resistance value R4 corresponding data point 14 that when temperature T 4, records.Theory according to above-mentioned solid state physics, the resistivity of metal under normal temperature and high temperature with temperature line relationship, then the resistance value of metal under normal temperature and high temperature also should with temperature line relationship, therefore for example the temperature variant relation of the resistance that each data point reflected among Fig. 7 should be able to be represented by linear function R=BT+C.Obtaining under the above-mentioned data conditions, by the computing method of application of known, for example least square method just can obtain the linear function higher with the data point goodness of fit, just no longer describes the process that obtains linear function herein in detail.
After obtaining the temperature variant relation of resistance, just can measure under the current environment resistance value of chip temperature sensing device corresponding to concrete chip operation environment.
For example, for the environment of chip operate as normal,, measure the resistance value R of chip temperature sensing device this moment to chip power
Op, as the resistance value of the long line of metal at empty frame 100 places.The method of measured resistance value can reference example such as following process:
As previously mentioned, at first need the long line of metal at empty frame 100 places is drawn by pin, because burn-in test generally is the chip through encapsulation, encapsulating material, moulding compound (molding compound) etc. are not the good conductors of heat, and this has also further aggravated the actual temperature of chip and the difference between the test environment temperature.
The method of drawing pin and corresponding measurement can have two kinds: 1) two hold-carryings, only need draw the two ends of the long line of metal, making alive is surveyed electric current, or add electric current survey voltage can; 2) four-end method, Kelvin (kelvin) measures, need draw four ends, example is structure as shown in Figure 3, Figure 4, promptly draws two pins at each end of metal wire, during measurement, each pin adds electric current at the two ends of metal wire, measures the voltage of another pin, calculates the voltage difference at two ends and obtains resistance divided by electric current, the advantage of this method is only to have calculated the voltage difference on the metal wire surveyed, and has eliminated the influence of measuring dead resistance in the loop.In addition, in order to make measured resistance value more accurate, also can repeatedly measure and average.
Again for example, be in the environment of burn-in test,, measure the resistance value R of chip temperature sensing device this moment chip power for chip
StrMeasured resistance value R
StrThe process of method during with reference to the said chip operate as normal.
After the resistance value that obtains the chip temperature sensing device under a certain environment, just can calculate Current Temperatures in conjunction with the temperature variant relation of acquired resistance.
For example, for the environment of chip operate as normal, with the resistance value R that measures
OpSubstitution linear function R=BT+C, then current chip internal temperature T
Op=(R
Op-C)/B.
Again for example, be in the environment of burn-in test for chip, with the resistance value R that measures
StrSubstitution linear function R=BT+C, then current chip internal temperature T
Str=(R
Str-C)/B.
Based on the aforementioned reason that provides, the temperature of the chip temperature sensing device that calculate this moment just can be used as the temperature of its adjacent chips interior zone.
Below further disclose the beneficial effect of temp measuring method of the present invention again by the calculating of an application example.
For length l=5000 μ m, cross-sectional area s is the example of the aluminum steel of 0.2 μ m * 0.25 μ m as the temperature sensing device, and through tabling look-up as can be known, aluminium resistivity at normal temperatures is ρ=2.82 * 10
-8Ω m.
Formula by resistivity and resistance value
The resistance value that can calculate this temperature sensing device is 2.82 * 10
3Ω.
For aluminium, its relative resistance varies with temperature rate
The resistance value substitution that calculates can be got,
That is to say that along with temperature does not raise 1 ℃, the resistance value of the temperature sensing device that this aluminum steel forms just increases by 11 Ω.Therefore, this temperature sensing device is also responsive to the temperature variation in 1 ℃, we can say that the temperature susceplibility of this temperature sensing device is quite accurate.
Though the present invention discloses as above with preferred embodiment, the present invention is defined in this.Any those skilled in the art without departing from the spirit and scope of the present invention, all can do various changes and modification, so protection scope of the present invention should be as the criterion with claim institute restricted portion.
Claims (11)
1. chip temperature sensing device, it is characterized in that, the linear structure that comprises the metal material that is positioned at chip internal, the redundancy structure of described linear structure and chip internal is positioned at the chip internal redundant area adjacent with functional circuit jointly, and perhaps described linear structure is the redundancy structure adjacent with described functional circuit.
2. chip temperature sensing device as claimed in claim 1 is characterized in that, the linear structure of described metal material is the long line of metal.
3. chip temperature sensing device as claimed in claim 2 is characterized in that, the long line of described metal comprises four exits, and described exit links to each other with chip pin.
4. chip temperature sensing device as claimed in claim 1 is characterized in that, the linear structure of described metal material is the metal broken line.
5. chip temperature sensing device as claimed in claim 4 is characterized in that, described metal broken line comprises four exits, and described exit links to each other with chip pin.
6. chip temperature sensing device as claimed in claim 1 is characterized in that, the linear structure of described metal material is many layer metal wire of striding with stack architecture, and the described layer metal wire of striding comprises through hole between multiple layer metal lines and double layer of metal lines.
7. chip temperature sensing device as claimed in claim 6 is characterized in that, the described top wire of striding layer metal wire with stack architecture comprises four exits, and described exit links to each other with chip pin.
8. chip temp measuring method based on each described chip temperature sensing device of claim 1 to 7 comprises:
Obtain the temperature variant relation of resistance in the chip temperature sensing device;
Measure the resistance value of described chip temperature sensing device under the current environment;
In conjunction with the temperature variant relation of described resistance, and measured resistance value, obtain the temperature of current chip temperature sensing device, as the temperature of its adjacent chips interior zone.
9. chip temp measuring method as claimed in claim 8, wherein, obtain that the temperature variant relation of resistance comprises in the chip temperature sensing device:
When chip does not power up work, measure the resistance value of described chip temperature sensing device correspondence under a plurality of temperature;
With the temperature is horizontal ordinate, and resistance value is an ordinate, obtains the temperature variant graph of a relation of resistance;
Data obtain the linear function that expression resistance varies with temperature relation in the match graph of a relation.
10. chip temp measuring method as claimed in claim 8, wherein, described current environment is the normal operation circumstances of chip.
11. chip temp measuring method as claimed in claim 8, wherein, described current environment is the test environment that chip is tested.
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| CN2009101947864A CN102004005A (en) | 2009-08-28 | 2009-08-28 | Chip temperature sensing device and temperature measurement method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110553748A (en) * | 2019-09-09 | 2019-12-10 | 浙江悦和科技有限公司 | Chip wiring layer temperature sensing circuit, temperature detection method and corresponding chip |
| CN112649103A (en) * | 2020-12-03 | 2021-04-13 | 东南大学 | Chip temperature measurement system based on thin film metal thermal resistor |
| CN113805044A (en) * | 2021-11-16 | 2021-12-17 | 北京智芯微电子科技有限公司 | Chip reliability assessment method and device and chip |
-
2009
- 2009-08-28 CN CN2009101947864A patent/CN102004005A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110553748A (en) * | 2019-09-09 | 2019-12-10 | 浙江悦和科技有限公司 | Chip wiring layer temperature sensing circuit, temperature detection method and corresponding chip |
| CN112649103A (en) * | 2020-12-03 | 2021-04-13 | 东南大学 | Chip temperature measurement system based on thin film metal thermal resistor |
| CN113805044A (en) * | 2021-11-16 | 2021-12-17 | 北京智芯微电子科技有限公司 | Chip reliability assessment method and device and chip |
| CN113805044B (en) * | 2021-11-16 | 2022-03-08 | 北京智芯微电子科技有限公司 | Chip reliability assessment method and device and chip |
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Application publication date: 20110406 |