CN112327124B - Method for monitoring thermal fatigue aging of IGBT module and method for non-uniform aging - Google Patents
Method for monitoring thermal fatigue aging of IGBT module and method for non-uniform aging Download PDFInfo
- Publication number
- CN112327124B CN112327124B CN202011059037.3A CN202011059037A CN112327124B CN 112327124 B CN112327124 B CN 112327124B CN 202011059037 A CN202011059037 A CN 202011059037A CN 112327124 B CN112327124 B CN 112327124B
- Authority
- CN
- China
- Prior art keywords
- igbt module
- time constant
- parallel
- parallel device
- thermal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
The invention relates to a method for monitoring thermal fatigue aging of an IGBT module and a non-uniform aging method, which comprises the following steps of A, establishing a corresponding relation between a shell temperature cooling curve time constant and IGBT module device parameters; b, acquiring a change curve of a shell temperature cooling curve time constant in an IGBT module aging process; c, measuring a shell temperature cooling curve under the parallel device to obtain a time constant reflecting the health state of the parallel device; d, judging the health state of the parallel device corresponding to the time constant in the step C according to the change curve of the time constant in the aging process obtained in the step B. The method can accurately obtain the health state of the IGBT module, and quantize the uneven degree of thermal fatigue aging, thereby being beneficial to analyzing the uneven degree of junction temperature and current distribution among parallel devices and providing guidance for safe and stable operation of the power converter.
Description
Technical Field
The invention relates to a method for detecting aging, in particular to a method for monitoring thermal fatigue aging of an IGBT module and a method for uneven aging.
Background
The multi-chip parallel IGBT module is widely applied to high-power converters, such as traction systems of high-speed trains, power generation systems of wind power and photovoltaic power and the like. However, due to repeated impact of thermal cycle and mismatch of thermal expansion coefficients of the upper and lower physical layers inside the multi-chip parallel IGBT module, and due to uneven distribution of current among the parallel chips and uneven heat conduction of the heat dissipation system, the power semiconductor devices in the parallel state inside the IGBT module are subjected to unbalanced electrothermal stress for a long time, resulting in inconsistent thermal fatigue failure rates of each parallel device, and thus the multi-chip parallel IGBT module is prone to uneven thermal fatigue aging during operation. Further research shows that the uneven thermal fatigue aging can increase the difference of junction temperatures between parallel devices, aggravate the uneven distribution degree of current, cause the IGBT module to operate in a derating way and accelerate the failure process of the IGBT module, further shorten the service life of the power module and reduce the reliability of the power module.
How to realize the state monitoring of the multi-chip parallel IGBT module is a very challenging problem, and the existing method is mainly based on the collector-emitter saturation voltage drop VceAnd total junction-to-shell thermal resistance Rjc. Although the characteristic quantity can realize the on-line monitoring of the health state of the single-chip IGBT module, the method is not suitable for the multi-chip parallel IGBT module. As described above, due to uneven thermal fatigue aging, the fatigue damage degrees of the power devices in parallel in the IGBT module are not consistent during the operation process, so that the failure rates of the parallel devices are different, and the failure rate of the power device bearing higher thermal stress is higher than the overall failure rate of the IGBT module. For the lifetime of an IGBT module, the reliability depends on the power device that fails first inside the module. Due to V of the power moduleceAnd RjcIt is considered the degree of thermal fatigue damage of the IGBT module as a whole, thus by monitoring the V of the power moduleceAnd RjcThe actual health of the multi-chip parallel IGBT module cannot be accurately obtained.
In addition, the existing method is lack of monitoring the non-uniform aging degree of the parallel devices in the multi-chip parallel IGBT module. Due to uneven thermal fatigue aging, junction temperature and current distribution difference among parallel devices can be aggravated, so that the IGBT module is derated to operate, and normal operation of the power converter is influenced.
Disclosure of Invention
The invention provides a method for monitoring thermal fatigue aging of an IGBT module in order to accurately monitor the aging degree of each parallel device in a multi-chip parallel IGBT module.
The technical scheme adopted by the invention is as follows: a method for monitoring thermal fatigue aging of a multi-chip parallel IGBT module comprises the following steps
A, establishing a corresponding relation between a shell temperature cooling curve time constant and IGBT module device parameters, wherein the step A comprises the following steps:
s01, establishing a second-order coul-type heat network model corresponding to each parallel device in an IGBT module, wherein at least two parallel devices are arranged in the IGBT module and are provided with radiators for heat dissipation, the second-order coul-type heat network model comprises first-order parameters and second-order parameters, the first-order parameters are parameters of the parallel devices, and the second-order parameters are parameters of the radiators;
s02, establishing a mapping relation between a shell temperature and temperature reduction curve time constant and each order parameter in the heat network model according to the second-order Coule type heat network model;
b, obtaining a change curve of the time constant of the shell temperature cooling curve of the IGBT module
The step B comprises
S01, establishing a finite element simulation model of the IGBT module, wherein the finite element simulation model simulates the aging process of the IGBT module by reducing the area of the solder layer;
s02, obtaining a change curve of the time constant reflecting the health state of each parallel device according to the finite element simulation model and the mapping relation established in the step A;
c, measuring a shell temperature cooling curve under the parallel device to obtain a time constant reflecting the health state of the parallel device;
d, judging the health state of the parallel device corresponding to the time constant in the step c according to the change curve of the time constant of the health state of the parallel device obtained in the step B.
Further, step a and step B are performed simultaneously, i.e. in parallel.
Further, the first-order parameters in the second-order couel type heat network model are the thermal resistance and the thermal capacity of the parallel devices, and the second-order parameters in the second-order couel type heat network model are the thermal resistance and the thermal capacity of the radiator;
furthermore, the mapping relation between the time constant of the shell temperature cooling curve and each order parameter in the heat network model is
Wherein R is1，mAnd C1，mHeat supply network of m-th parallel device respectivelyThe thermal resistance value and the thermal capacitance value of the first order in the complex model; r2，mAnd C2，mThe thermal resistance value and the thermal capacitance value of the second stage in the thermal network model of the mth parallel device are respectively; tau is1，mIs the time constant, tau, reflecting the health state of the parallel device in the mth parallel device shell temperature drop curve2，mAnd the time constant reflecting the health state of the radiator in the shell temperature cooling curve of the mth parallel device.
Further, combining the finite element simulation model and a structure function method to obtain the thermal resistance value R of the parallel device1，mAnd a heat capacity value C1，mAccording to said thermal resistance value R1，mAnd a heat capacity value C1，mAnd obtaining a change rule reflecting the time constant of the health state of each parallel device by the mapping relation established in the last step.
Further, the step C is specifically that
Installing thermocouples for detecting the temperature of the parallel devices, wherein each parallel device corresponds to one thermocouple;
establishing a shell temperature drop curve according to the temperature detected by the thermocouple;
the shell temperature cooling curve passes through an expression
Fitting to obtain the time constant of the parallel device, wherein A1，mAnd A2，mIs a constant, Tc，m(t) is a temperature drop curve t of the shell temperature with respect to time t1，mTime constant tau reflecting the health of the mth parallel device1，m，t2，mTime constant tau reflecting the health of the mth radiator2，m。
The invention also provides a method for monitoring the thermal fatigue uneven aging of the multi-chip parallel IGBT module, which comprises the following steps
A, establishing a corresponding relation between a shell temperature cooling curve time constant and IGBT module device parameters, wherein the step A comprises the following steps:
s01, establishing a second-order coul-type heat network model corresponding to each parallel device in an IGBT module, wherein the IGBT module is provided with at least two parallel devices, each parallel device is provided with a radiator for radiating heat, the second-order coul-type heat network model comprises a first-order parameter and a second-order parameter, the first-order parameter is a parallel device parameter, and the second-order parameter is a radiator parameter;
s02, establishing a mapping relation between the shell temperature and temperature reduction curve time constant and each order parameter in the heat network model according to the second order Coule type heat network model
B, obtaining a change curve of the time constant of the shell temperature cooling curve of the IGBT module
The step B comprises
S01, establishing a finite element simulation model of the IGBT module, wherein the finite element simulation model simulates the aging process of the IGBT module by reducing the area of the solder layer;
s02, obtaining a change curve of the time constant reflecting the health state of each parallel device according to the finite element simulation model and the mapping relation established in the step A;
c, measuring a shell temperature cooling curve under the parallel device to obtain a time constant reflecting the health state of the parallel device;
and D, selecting the time constant of the parallel device at the central position of the IGBT module as a denominator and the time constant of the edge parallel device as a numerator, and calculating the ratio, wherein the larger the ratio is, the more serious the uneven aging degree is.
The beneficial effects produced by the invention comprise: according to the invention, the corresponding relation between the shell temperature cooling curve time constant and the heat network model is obtained by constructing an equivalent Coule heat network model, a finite element simulation model is constructed, the change rule of the shell temperature cooling curve time constant in the aging process of the IGBT module is obtained, the aging degree of each parallel device in the module and the non-uniform aging degree of each device are judged according to the corresponding relation and the change rule, and the health state of the IGBT module is accurately obtained. Quantifying the uneven degree of thermal fatigue aging can help to analyze the uneven degree of junction temperature and current distribution among parallel devices, and provides guidance for safe and stable operation of the power converter.
Drawings
FIG. 1 is a flow chart of a monitoring method of the present invention;
fig. 2 is a schematic structural diagram of an IGBT module according to the present invention.
Detailed Description
The present invention is explained in further detail below with reference to the drawings and the specific embodiments, but it should be understood that the scope of the present invention is not limited to the specific embodiments.
The technical solution of the present invention is further described below with reference to the accompanying drawings and examples.
Referring to fig. 1, a method for monitoring thermal fatigue aging of a multi-chip parallel IGBT module according to the present invention is shown, which includes the steps of:
a. establishing an equivalent Coule thermal network model according to physical parameters and structures of the IGBT module and the radiator; referring to fig. 2, the IGBT module includes m devices connected in parallel, m is greater than 2, m is greater than 3 in this embodiment, each parallel device corresponds to a heat sink, and the thermal resistance and thermal capacity of the parallel devices are R1，mAnd C1，mThe heat resistance and heat capacity of the heat sink are R2，mAnd C2，m。
In this embodiment, step a specifically includes: according to the physical parameters (thermal resistance and thermal capacity) and the structure (the number of parallel devices) of the IGBT module and the radiator, a corresponding second-order Coule-type heat network model is established for each parallel device, as shown in FIG. 2, wherein the first-order parameters are related to the device, and the second-order parameters are related to the radiator. The first-order RC parameter corresponds to the thermal resistance and the thermal capacity of the parallel device, and the second-order RC parameter is the thermal resistance and the thermal capacity of the radiator.
b. By using the magnitude difference between thermal parameters in the established second-order Coule type thermal network model, wherein the difference refers to C2，mIs C1，m100 times of the shell temperature and temperature reduction curve time constant and the mapping relation between each order of parameters in the second-order Coule type heat network model are established;
in this embodiment, step b specifically includes: according to the difference of the first-order and second-order thermal parameters in the equivalent thermal network model on the numerical magnitude, establishing a mapping relation between the thermal network parameters and the time constant of the shell temperature cooling curve, as follows:
wherein R is1，mAnd C1，mThe thermal resistance value and the thermal capacitance value of the first stage in the thermal network corresponding to the mth parallel device respectively; r2，mAnd C2，mThe thermal resistance value and the thermal capacitance value of a second stage in the thermal network corresponding to the mth parallel device respectively; tau is1，mAnd τ2，mIs the time constant of the shell temperature drop curve of the mth parallel device. Tau is1，mTo reflect the time constant of the state of health of the parallel devices, τ2，mIs a time constant reflecting the health of the radiator.
c. Combining the finite element simulation model of the IGBT module and the established mapping relation to obtain a time constant tau reflecting the health state of each parallel device1，mA change rule;
in this embodiment, step c specifically includes: based on the finite element simulation model of the IGBT module, the aging process of the IGBT module is simulated by reducing the area of the solder layer, and R is measured according to a structural function method1，mAnd C1，mThen calculating the time constant tau reflecting the health state of each parallel device1，mAnd (4) changing the rule.
d. Obtaining a time constant tau reflecting the health state of each parallel device by fitting a measured shell temperature cooling curve under each parallel device1，m。
In this embodiment, step d specifically includes: a thermocouple is arranged at the center of the bottom of each parallel device, the shell temperature cooling curve is measured, and an expression is combined
Fitting to obtain the time constant of the corresponding device, wherein A1，mAnd A2，mIs a coefficient, t is a cooling time, t1，mIs tau1，m，t2，mIs tau2，m。
e. Incorporation of τ in step c1，mAnd τ measured in step d1，mThe health status of each parallel device (chip) in the multi-chip parallel IGBT module can be analyzed.
In this embodiment, step e specifically includes: according to τ1，mLaw of change in aging process and actual measurement tau1，mThe health state of the mth parallel device is analyzed.
The method for monitoring the thermal fatigue non-uniform aging of the multi-chip parallel IGBT module comprises the following steps:
and calculating the ratio of the time constant of the parallel device closest to the central point of the IGBT module substrate to the time constant of the parallel device farthest from the central point of the IGBT module substrate, and analyzing the uneven aging degree in the IGBT module, wherein the higher the ratio is, the more uneven the aging is.
In the description of the present application, it is to be understood that the terms "central," "longitudinal," "lateral," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are used in the orientations and positional relationships indicated in the drawings for the convenience of description and simplicity of description, and do not indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and thus are not to be considered limiting of the claimed invention.
The above description is only a preferred embodiment of the present invention, and the present invention is not limited to the content of the embodiment. It will be apparent to those skilled in the art that various changes and modifications can be made within the technical scope of the present invention, and any changes and modifications made are within the protective scope of the present invention.
Claims (5)
1. A method for monitoring the thermal fatigue uneven aging of a multi-chip parallel IGBT module is characterized in that: the method comprises the following steps:
a, establishing a corresponding relation between a shell temperature cooling curve time constant and IGBT module device parameters, wherein the step A comprises the following steps:
s01, establishing a second-order coul-type heat network model corresponding to each parallel device in an IGBT module, wherein the IGBT module is provided with at least two parallel devices, each parallel device is provided with a radiator for radiating heat, the second-order coul-type heat network model comprises a first-order parameter and a second-order parameter, the first-order parameter is a parallel device parameter, and the second-order parameter is a radiator parameter;
s02, establishing a mapping relation between a shell temperature and temperature reduction curve time constant and each order parameter in the heat network model according to the second-order Coule type heat network model;
b, obtaining a change curve of the time constant of the IGBT module shell temperature cooling curve, wherein the step B comprises the following steps:
s01, establishing a finite element simulation model of the IGBT module, wherein the finite element simulation model simulates the aging process of the IGBT module by reducing the area of the solder layer;
s02, obtaining a change curve of the time constant reflecting the health state of each parallel device according to the finite element simulation model and the mapping relation established in the step A;
c, measuring a shell temperature cooling curve under the parallel device to obtain a time constant reflecting the health state of the parallel device;
and D, selecting the time constant of the parallel device at the central position of the IGBT module as a denominator and the time constant of the edge parallel device as a numerator, and calculating the ratio, wherein the larger the ratio is, the more serious the uneven aging degree is.
2. The method for monitoring the thermal fatigue non-uniform aging of a multi-chip parallel IGBT module according to claim 1, characterized in that: the first-order parameters in the second-order coul-type heat network model are the thermal resistance and the thermal capacity of the parallel devices, and the second-order parameters in the second-order coul-type heat network model are the thermal resistance and the thermal capacity of the radiator.
3. The method for monitoring the thermal fatigue non-uniform aging of a multi-chip parallel IGBT module according to claim 1, characterized in that: the mapping relation between the time constant of the shell temperature cooling curve and each order of parameters in the thermal network model is as follows:
wherein R is1,mAnd C1,mRespectively the thermal resistance value and the thermal capacitance value of the first stage in the thermal network model of the mth parallel device; r2,mAnd C2,mThe thermal resistance value and the thermal capacitance value of the second stage in the thermal network model of the mth parallel device are respectively; tau is1,mIs the time constant, tau, reflecting the health state of the parallel device in the mth parallel device shell temperature drop curve2,mAnd the time constant reflecting the health state of the radiator in the shell temperature cooling curve of the mth parallel device.
4. The method for monitoring the thermal fatigue non-uniform aging of a multi-chip parallel IGBT module according to claim 1, characterized in that: firstly obtaining the thermal resistance value R of the parallel device by combining the finite element simulation model and the structure function method1,mAnd a heat capacity value C1,mAccording to the thermal resistance R1,mAnd a heat capacity value C1,mAnd the established mapping relation obtains a change rule reflecting the time constant of the health state of each parallel device.
5. The method for monitoring the thermal fatigue non-uniform aging of a multi-chip parallel IGBT module according to claim 1, characterized in that: the step C is specifically as follows:
installing thermocouples for detecting the temperature of the parallel devices, wherein each parallel device corresponds to one thermocouple;
establishing a shell temperature drop curve according to the temperature detected by the thermocouple;
the shell temperature cooling curve passes through an expression
Fitting to obtain the time constant of the parallel device, wherein A1,mAnd A2,mIs a constant, Tc,m(t) is the temperature drop curve of the shell temperature with respect to time t, t1,mTime constant tau reflecting the health of the mth parallel device1,m，t2,mReflecting the state of health of the mth radiatorTime constant τ2,m。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011059037.3A CN112327124B (en) | 2020-09-30 | 2020-09-30 | Method for monitoring thermal fatigue aging of IGBT module and method for non-uniform aging |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011059037.3A CN112327124B (en) | 2020-09-30 | 2020-09-30 | Method for monitoring thermal fatigue aging of IGBT module and method for non-uniform aging |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112327124A CN112327124A (en) | 2021-02-05 |
| CN112327124B true CN112327124B (en) | 2021-11-12 |
Family
ID=74314438
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011059037.3A Active CN112327124B (en) | 2020-09-30 | 2020-09-30 | Method for monitoring thermal fatigue aging of IGBT module and method for non-uniform aging |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112327124B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113702794B (en) * | 2021-09-03 | 2022-07-15 | 上海交通大学 | Power semiconductor device health state evaluation method based on thermal impedance characteristic frequency |
| CN116930729A (en) * | 2023-09-18 | 2023-10-24 | 法特迪精密科技（苏州）有限公司 | Multi-chip aging test system and method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110161398A (en) * | 2018-09-04 | 2019-08-23 | 河北工业大学 | A method of IGBT power module ageing state is assessed using shell temperature |
| CN111381139A (en) * | 2018-12-29 | 2020-07-07 | 长鑫存储技术有限公司 | Semiconductor device testing method and semiconductor device testing system |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8924900B2 (en) * | 2013-04-11 | 2014-12-30 | Chung Yuan Christian University | Analytical synthesis method and otra-based circuit structure |
| JP5946436B2 (en) * | 2013-10-21 | 2016-07-06 | カルソニックカンセイ株式会社 | Battery parameter estimation apparatus and parameter estimation method |
| CN105718694B (en) * | 2016-01-28 | 2019-02-19 | 重庆大学 | Ther mal network parameter identification method based on IGBT junction temperature information |
| EP3203250B1 (en) * | 2016-02-03 | 2023-05-24 | Mitsubishi Electric R&D Centre Europe B.V. | Method and device for estimating a level of damage or a lifetime expectation of a power semiconductor module |
| CN111103319B (en) * | 2019-12-13 | 2022-01-28 | 河海大学 | Health state monitoring method for heat-conducting silicone grease and cooling fan |
| CN111060797A (en) * | 2019-12-13 | 2020-04-24 | 河海大学 | IGBT module health state monitoring method based on natural frequency of heat network |
| CN111400888A (en) * | 2020-03-11 | 2020-07-10 | 河海大学 | Thermal parameter identification method of IGBT module and heat dissipation system based on thermal network time constant |
-
2020
- 2020-09-30 CN CN202011059037.3A patent/CN112327124B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110161398A (en) * | 2018-09-04 | 2019-08-23 | 河北工业大学 | A method of IGBT power module ageing state is assessed using shell temperature |
| CN111381139A (en) * | 2018-12-29 | 2020-07-07 | 长鑫存储技术有限公司 | Semiconductor device testing method and semiconductor device testing system |
Non-Patent Citations (1)
| Title |
|---|
| IGBT模块热结构建模及其老化的研究;王存乐;《中国优秀博硕士学位论文全文数据库(硕士)工程科技Ⅱ辑》;20200115(第01期);第C042-538页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112327124A (en) | 2021-02-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112327124B (en) | Method for monitoring thermal fatigue aging of IGBT module and method for non-uniform aging | |
| CN101017510B (en) | Method for calculating junction temperature of microelectronics using heat resistance network model | |
| CN103792476B (en) | Thermo-resistance measurement method for semiconductor device | |
| US6238086B1 (en) | Method of calculating thermal resistance in semiconductor package accommodating semiconductor chip within a case which can be applied to calculation for semiconductor package with radiation fins | |
| JP5840103B2 (en) | Solar power generation system management device | |
| CN110298126B (en) | Multi-element Copula power device reliability evaluation method based on failure physics | |
| CN111060797A (en) | IGBT module health state monitoring method based on natural frequency of heat network | |
| CN116306411A (en) | Three-dimensional stacked chip thermal simulation model establishment and hot spot temperature prediction method | |
| Zhang et al. | Thermal characterization of both bare die and overmolded 2.5-D packages on through silicon interposers | |
| Hu et al. | Monitoring power module solder degradation from heat dissipation in two opposite directions | |
| CN115015723A (en) | State monitoring method and device of GaN power device, computer equipment and medium | |
| CN116579189B (en) | IGBT power module service life prediction method and device | |
| CN214473738U (en) | Device for measuring thermal resistance of semiconductor chip | |
| Fan et al. | Base solder voids identification of IGBT modules using case temperature | |
| Dong et al. | Parameter extraction method for Cauer model considering dynamic thermal diffusion boundaries in IGBT module | |
| Vinke et al. | Thermal characterization of electronic devices by means of improved boundary condition independent compact models | |
| CN102004005A (en) | Chip temperature sensing device and temperature measurement method | |
| CN111103319B (en) | Health state monitoring method for heat-conducting silicone grease and cooling fan | |
| Gao et al. | Junction temperature estimation based on updating RC network for different liquid cooling conditions | |
| US20040150417A1 (en) | Integrated circuit with junction temperature sensing diode | |
| Zhang et al. | An Improved Cauer Model of IGBT Module Considering Chip Solder Degradation | |
| Janicki et al. | Compact thermal modeling of color LEDs—A comparative study | |
| CN113572148A (en) | Current transformer system, and method and device for evaluating health state of current transformer power module | |
| Wan et al. | Accurate Theta JC measurement for high power packages | |
| Cermak et al. | A transient thermal tester as an alternative to thermocouples for characterizing heat sinks |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |