CN101989500A - Dye-sensitized solar cell - Google Patents
Dye-sensitized solar cell Download PDFInfo
- Publication number
- CN101989500A CN101989500A CN2010102407616A CN201010240761A CN101989500A CN 101989500 A CN101989500 A CN 101989500A CN 2010102407616 A CN2010102407616 A CN 2010102407616A CN 201010240761 A CN201010240761 A CN 201010240761A CN 101989500 A CN101989500 A CN 101989500A
- Authority
- CN
- China
- Prior art keywords
- cathode side
- dye
- electrode
- conductive layer
- side substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
The dye-sensitized solar cell includes a working electrode, a counter electrode that is disposed to face the working electrode with a space therebetween, and an electrolyte that fills in between the working electrode and the counter electrode. The counter electrode includes a substrate having a reflectance of 30% or more at least one wavelength in the range of 400 to 750 nm.
Description
Technical field
The present invention relates to dye-sensitized solar cell, specifically, relate to and be suitable as the dye-sensitized solar cell that has improved the solar cell of generating efficiency with easy formation.
Background technology
In recent years, consider that the dye-sensitized solar cell that has proposed to have used dye-sensitized semiconductor is the new solar cell of silicon class solar cell as an alternative from batch processization and cost degradation viewpoint.
Dye-sensitized solar cell possesses usually: have optical sensibilization work electrode (anode), and work electrode across the counter electrode (to electrode, negative electrode) of interval subtend configuration be filled in 2 electrolyte between the electrode.In the dye-sensitized solar cell, be created in electronics on the work electrode based on irradiation of sunlight and be situated between by distribution, in 2 interelectrode electrolyte, carry out electronics simultaneously and give and accept to electrode is moved.
In this dye-sensitized solar cell, work electrode comprises substrate (anode-side substrate), is layered in the transparent and electrically conductive film on the substrate surface and is layered in the dye-sensitized semiconductor that transparent and electrically conductive film is lip-deep, adsorbed dyestuff, and counter electrode comprises substrate (cathode side substrate), is layered in the conductive film on the substrate surface and is layered in the lip-deep catalyst layer of conductive film.
In addition, consider from the viewpoint that improves generating efficiency, proposed reflection layer or light scattering reflector to be set by upside or downside at the anode-side substrate, make thus through work electrode and the sunlight that reaches counter electrode and in reflection layer or light scattering reflector, reflect, with the light of reflected back supply to once more work electrode with produce electronics (reference example as, TOHKEMY 2005-158379 communique and TOHKEMY 2000-348784 communique.)。
Summary of the invention
But the dye-sensitized solar cell of TOHKEMY 2005-158379 communique and TOHKEMY 2000-348784 communique has reflection layer, light scattering reflector, the shortcoming that the formation of counter electrode is complicated need be set separately.In addition, owing to need carry out the manufacturing process in reflection layer, light scattering reflector separately, therefore there is the shortcoming of manufacturing cost increase.
The object of the present invention is to provide and a kind ofly can when improving generating efficiency, further realize the dye-sensitized solar cell of cost degradation with easy formation.
Dye-sensitized solar cell of the present invention, it is characterized in that, it has: work electrode, and above-mentioned work electrode across interval subtend configuration to electrode and be filled in above-mentioned work electrode and above-mentioned to the electrolyte between the electrode, it is above-mentioned that electrode is had reflection of light rate at least 1 wavelength under the scope of wavelength 400～750nm is substrate more than 30%.
In addition, in dye-sensitized solar cell of the present invention, aforesaid substrate is preferably the flexible film that is formed by liquid crystal polymer.
In addition, in dye-sensitized solar cell of the present invention, aforesaid substrate is preferably the flexible film that is dispersed with micro mist shape filler.In addition, above-mentioned micro mist shape filler is preferably titanium oxide.
According to dye-sensitized solar cell of the present invention, electrode is had the reflection of light rate of the specific wavelength substrate at particular range.Therefore, can reflect the sunlight of the light that comprises specific wavelength effectively to electrode, can with the sunlight that has been reflected once more in work electrode to produce electronics.Its result can improve generating efficiency.
And then, because the reflectivity of substrate is in particular range, so can improve generating efficiency and reflection layer or light scattering reflector etc. needn't be set separately with easy formation.Therefore, can omit the manufacturing process in reflection layer or light scattering reflector, thereby can when improving generating efficiency, further realize cost degradation with easy formation.
Description of drawings
Fig. 1 illustrates the profile of an execution mode (cathode side substrate and the electrolyte state of contact exposed from catalyst layer) of dye-sensitized solar cell of the present invention.
Fig. 2 illustrates the profile to electrode (state with cathode side substrate, cathode side conductive layer and catalyst layer) of dye-sensitized solar cell shown in Figure 1.
Fig. 3 illustrates the profile to electrode (state with cathode side substrate and cathode side conductive layer) of other execution mode of dye-sensitized solar cell of the present invention.
Fig. 4 illustrates the profile of other execution mode (clipping the state of cathode side conductive layer between cathode side substrate and electrolyte) of dye-sensitized solar cell of the present invention.
Fig. 5 illustrate dye-sensitized solar cell of the present invention other execution mode (the cathode side substrate that exposes from catalyst layer above left part contact with electrolyte, the right flank and the sealant state of contact of cathode side conductive layer and catalyst layer) profile.
Fig. 6 illustrate dye-sensitized solar cell of the present invention other execution mode (the cathode side substrate that exposes from catalyst layer above left part contact with electrolyte, the right flank and the sealant state of contact of catalyst layer) profile.
Fig. 7 illustrates the profile of other execution mode (state that anode side conductive layer and cathode side conductive layer are connected with the current collection distribution) of dye-sensitized solar cell of the present invention.
Fig. 8 illustrates the figure of the cathode side substrate of each embodiment and each comparative example to the reflection of light rate of wavelength 300～800nm.
Embodiment
Fig. 1 illustrates the profile of an execution mode (cathode side substrate and the electrolyte state of contact exposed from catalyst layer) of dye-sensitized solar cell of the present invention; Fig. 2 illustrates the profile to electrode (state with cathode side substrate, cathode side conductive layer and catalyst layer) of dye-sensitized solar cell shown in Figure 1.
Among Fig. 1, this dye-sensitized solar cell 1 have work electrode 2 (anode), and work electrode 2 thickness direction (above-below direction among Fig. 1) go up across the configuration of interval subtend to electrode (negative electrode, counter electrode) 3 and be filled in work electrode 2 and to the electrolyte between the electrode 34.
Work electrode 2 has optical sensibilization, forms with nearly writing board shape.Work electrode 2 has anode-side substrate 5, be layered in the anode side conductive layer 6 under the anode-side substrate 5 and be layered in dye-sensitized semiconductor layer 7 under the anode side conductive layer 6.
Anode-side substrate 5, transparent and form with writing board shape, for example, can form by flexible films such as rigid plate such as glass substrate (rigid board), plastic film insulation board, dielectric films such as (liquid crystal polymer film described later, filler disperse except film and the filler dispersed LCD thin polymer film).
Plastic material as plastic film, for example can list, PETG (PET), polybutylene terephthalate (PBT), poly-2,6-(ethylene naphthalate) polyester resins (except thermotropic liquid crystal described later (ThermoTropic Liquid CrysTal) polyester, the thermotropic liquor polyester acid amides) such as (PEN); Acrylic resin such as polyacrylate, polymethacrylates for example; Polyethylene (PE for example.For example, high density PE, low density PE etc.), olefine kind resin such as polypropylene, ethylene-propylene copolymer; Vinyl-based resins such as polyvinyl chloride, vinyl-vinyl acetate copolymer, ethylene-vinyl alcohol copolymer for example; Acid imide such as polyimides, polyamidoimide resin for example; Ether resins such as polyethers nitrile, polyether sulfone etc. for example.These plastic materials can use separately or also use more than 2 kinds.
The thickness of anode-side substrate 5 is preferably 10～400 μ m for for example 5～500 μ m.
In addition, anode-side substrate 5 has the transmittance to sunlight (specifically being visible light etc.), specifically, to the optical transmission rate of at least 1 wavelength under the scope of wavelength 400～750nm for for example more than 70%, be preferably more than 80%, more preferably more than 90%, be generally below 99.9%.
Anode side conductive layer 6 for example is made of transparent conductive film, forms below anode-side substrate 5 whole.
Electric conducting material as forming transparent conductive film for example can list metal materials such as gold, silver, copper, platinum, nickel, tin, aluminium; For example tin-doped indium oxide (ITO), fluorine-doped tin oxide (FTO), zinc doping indium oxide metal oxide (composite oxides) materials such as (IZO); Carbonaceous material of carbon etc. etc. for example.These electric conducting materials can use separately or also use more than 2 kinds.
The resistivity of anode side conductive layer 6 is for example 1.0 * 10
-2Below the Ω cm, be preferably 1.0 * 10
-3Below the Ω .cm.
In addition, the thickness of anode side conductive layer 6 is preferably 0.1～10 μ m for for example 0.01～100 μ m.
In addition, the optical transmission rate of 6 pairs of at least 1 wavelength under the scope of wavelength 400～750nm of anode side conductive layer is preferably more than 80% for for example more than 70%, more preferably more than 90%, is generally below 99.9%.
Dye-sensitized semiconductor layer 7 is midway the forming of Width (left and right directions of Fig. 1) below anode side conductive layer 6, that is to say that the mode of exposing with the Width both ends of anode side conductive layer 6 forms.
Dye-sensitized semiconductor layer 7 is by granuloplastic with the stacked dye-sensitized semiconductor of sheet (film) shape, and this dye-sensitized semiconductor particle is that absorbing dye forms on the porous matter semiconductor grain that is formed by metal oxide for example.
As metal oxide, can list for example titanium oxide, zinc oxide, tin oxide, tungsten oxide, zirconia, hafnium oxide, strontium oxide strontia, indium oxide, yittrium oxide, lanthana, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, iron oxide, nickel oxide, silver oxide etc.Preferably list titanium oxide.
Dyestuff, be to sunlight for example, specifically the visible light of the light of the scope that comprises wavelength 400～750nm had a material of absworption peak, particularly can list for example metal complex such as ruthenium complex, cobalt complex, for example, organic class dyestuffs such as cyanine, merocyanine, phthalocyanine, cumarin, riboflavin (riboflavin), xanthene, triphenyl methane, azo, quinone etc.Preferably enumerate ruthenium complex, merocyanine.
The average grain diameter of dye-sensitized semiconductor particle is counted for example 5～200nm with primary particle size, is preferably 8～100nm.
In addition, the thickness of dye-sensitized semiconductor layer 7 is preferably 0.5～50 μ m for for example 0.4～100 μ m, more preferably 0.5～15 μ m.
In addition, the optical transmission rate of 7 pairs of at least 1 wavelength under the scope of wavelength 400～750nm of dye-sensitized semiconductor layer is preferably below 70% for for example below 90%, is generally below 50%.
The thickness of work electrode 2 is preferably 10～500 μ m for for example 5～1000 μ m.
In addition, the optical transmission rate of 2 pairs of at least 1 wavelength under the scope of wavelength 400～750nm of work electrode can suitably be selected with respect to the area ratio of anode-side substrate 5 according to dye-sensitized semiconductor layer 7, for for example more than 30%, be preferably more than 50%, more preferably more than 70%, be generally below 99.9%.
In the back electrode 3 is described in detail, forms with nearly writing board shape.
Contain in the electrolyte 4 iodine and/or, the combination (redox system) of iodine and iodine compound is as must composition.
As iodine compound, can list for example lithium iodide (LiI), sodium iodide (NaI), KI (KI), cesium iodide (CsI), calcium iodide (CaI
2) wait metal iodide, for example organic quaternary ammonium iodide salt such as tetraalkyl ammonium iodide, iodate imidazoles, iodate pyridine etc.
In addition, for example can also contain halogens (except the iodine) such as bromine in the electrolyte 4, for example the combination (except combinations of iodine and iodine compound) of halogen such as the combination of bromine and bromine compounds and halogen compounds is as composition arbitrarily.
As solvent, can list dimethyl carbonate, diethyl carbonate, methyl ethyl carbonate, ethylene carbonate, carbonate products such as propylene carbonate, methyl acetate for example, methyl propionate, ester compounds such as gamma-butyrolacton, ether for example, 1, the 2-dimethoxy-ethane, 1, the 3-dioxolanes, oxolane, ether compounds such as 2-methyltetrahydrofuran, 3-methyl-2-oxazolidone for example, heterocyclic compounds such as 2-methyl pyrrolidone, acetonitrile for example, methoxyacetonitrile, propionitrile, nitrile compounds such as 3-methoxypropionitrile, for example sulfolane, methyl-sulfoxide, organic solvents such as non-proton property such as dimethyl formamide polar compound, aqueous solvents such as water.Preferably enumerate organic solvent, more preferably enumerate nitrile compound.
Electrolytically contain proportionally,,, be preferably 0.01～1 weight portion for for example 0.001～10 weight portion with respect to 100 weight portion electrolyte.In addition, electrolytical concentration can be made as for example 0.001～10M according to prescribed degree according to electrolytical molecular weight, is preferably 0.01～1M.
Gel electrolyte waits by the known gelating agent that cooperates proper proportion in electrolyte and to modulate.
As gelating agent, can list the low molecular gel agent of the polysaccharide etc. of for example natural higher fatty acids, amino-acid compound etc., for example gather 1, the high-molecular gel agent of vinyl-based macromolecules such as fluorine family macromolecule, polyvinyl acetate, polyvinyl alcohol such as 1-difluoroethylene, vinylidene fluoride-hexafluoropropylene copolymer etc. etc.
The filling thickness of this electrolyte 4 is preferably 5～100 μ m for for example 5～500 μ m.
In addition, the optical transmission rate of 4 pairs of at least 1 wavelength under the scope of wavelength 400～750nm of electrolyte is generally below 95% for for example more than 5%.
In addition, be provided with in this dye-sensitized solar cell 1 and be used for that electrolyte 4 is sealed in work electrode 2 and the sealant between the electrode 3 11.
Encapsulant as forming sealant 11 can list for example organic siliconresin, epoxy resin, polyisobutene resinoid, thermoplastic resin, glass paste etc.
The thickness of sealant 11 (length of above-below direction) is preferably 5～100 μ m for for example 5～500 μ m, more preferably 10～50 μ m.
And, in Fig. 1 and Fig. 2, electrode 3 is had cathode side substrate 8 as substrate.
As cathode side substrate 8, can list the flexible film that for example forms by liquid crystal polymer (below be called " liquid crystal polymer film ".), be dispersed with micro mist shape filler flexible film (below be called " filler dispersion film ".)。
As liquid crystal polymer, for example can list cited compound in following [1]～[4] and derivative thereof as raw material and synthetic thermotropic liquor polyester, thermotropic liquor polyester acid amides etc.
[1] (following formula (1)～(7) show typical example for aromatic series or aliphat dihydroxy compounds.)
(in the formula (1), X represents atom or groups such as low alkyl group or phenyl such as hydrogen atom or halogen atom.)
(in the formula (4), Y represents-O-,-CH
2-or-groups such as S-.)
(in the formula (7), N represents 2～12 integer.)
[2] (following formula (8)～(14) show typical example for aromatic series or aliphatic dicarboxylic acid.)
(in the formula (14), N represents 2～12 integer.)
[3] (following formula (15)～(18) show typical example to aromatic hydroxy-carboxylic.)
(in the formula (15), X represents atom or groups such as low alkyl group or phenyl such as hydrogen atom or halogen atom.)
[4] (following formula (19)～(21) show typical example for aromatic diamine, aromatic hydroxyl amine or aromatic amine yl carboxylic acid.)
In addition, as liquid crystal polymer, copolymer (3) that preferably list the copolymer (1) that formed by unit a shown in the following formula (22) and unit b, forms by the copolymer (2) that unit c～unit e forms shown in the following formula (23), by unit f shown in the following formula (24) and unit g etc. contains the copolymer of p-hydroxybenzoate.
Copolymer (1)～copolymer (3) can be that raw material synthesizes with the monomer that contains 50～80 moles of % P-hydroxybenzoic acid for example all.
Specifically, copolymer (1) is P-hydroxybenzoic acid and 2, and the condensation polymer of 6-hydroxynaphthoic acid is preferably formed by the unit a of 50～80 moles of % and the unit b of 20～50 moles of %.
Copolymer (2) is a P-hydroxybenzoic acid, 4, and the condensation polymer of 4 '-dihydroxybiphenyl and terephthalic acid (TPA) is preferably formed by the unit d of the unit c of 50～80 moles of %, 1～49 mole of % and the unit e of 1～49 mole of %.
Copolymer (3) is the condensation polymer of P-hydroxybenzoic acid and ethylene glycol, is preferably formed by the unit f of 20～50 moles of % and the unit g of 50～80 moles of %.
Above-mentioned copolymer (1)～copolymer (3) can use separately or and use.
As liquid crystal polymer, more preferably enumerate copolymer (1).
This liquid crystal polymer film can use commercially available product, for example can use VECSTAR series (Kuraray Co.LTd system), BIAC series (Japan Gore-Tex Inc. system) etc.
In addition, the weight average molecular weight of liquid crystal polymer is for example 10000～150000, is preferably 20000～70000.
In addition, the fusing point of liquid crystal polymer is preferably more than 280 ℃ for for example more than 250 ℃, is generally below 610 ℃.
In addition, the water absorption rate of liquid crystal polymer film (JIS C-6481, condition: E-24/50+D-24/23), be preferably below 1%, more preferably below 0.1%, be generally more than 0.001% for for example below 5%.
In addition, the linear expansion coefficient of liquid crystal polymer film (50～100 ℃) is preferably below 50ppm/ ℃ for for example below 100ppm/ ℃, is generally more than 0.1ppm/ ℃.
Filler disperses film, for example can be by following acquisition: cooperation micro mist shape filler in resin, and the ester moulding that contains filler that will be combined with micro mist shape filler is sheet (film) shape.
Micro mist shape filler, for example can listing, average grain diameter is for example following filler of 500nm, specifically, can list for example titanium oxide, magnesium oxide, zinc oxide, silica (silicon dioxide, mica powder, mica), aluminium oxide oxides such as (alundum (Al, bentonites), for example calcium carbonate (for example, powdered whiting, precipitated calcium carbonate, calcene etc.), metal carbonated such as sodium carbonate, for example metal powder such as aluminium powder, for example talcum, clay, aluminium hydroxide etc.
These micro mist shape fillers can use separately or also use more than 2 kinds.
In these micro mist shape fillers, preferably enumerate oxide, more preferably enumerate titanium oxide.
The average grain diameter of micro mist shape filler is preferably 1～500nm, more preferably 10～300nm.
In addition, micro mist shape filler, for for example 30% or more is preferably 40% or more the reflection of light rate of 1 wavelength under the scope of wavelength 400～750nm at least, more preferably more than 50%, especially be preferably more than 60%, is generally below 90%.When the not enough above-mentioned scope of the reflectivity of micro mist shape filler, the reflectivity (aftermentioned) of cathode side substrate 8 under specific wavelength can not be set in the particular range sometimes.
As resin, can list and the identical resin of plastic material that in above-mentioned anode-side substrate 5, lists.Preferably enumerate polyester resin.
The cooperation ratio of micro mist shape filler for example, contains the resin of filler with respect to 100 weight portions, for for example 1～50 weight portion, is preferably 5～40 weight portions, more preferably 10～30 weight portions.
When the not enough above-mentioned scope of the cooperation ratio of micro mist shape filler, the reflectivity (aftermentioned) of cathode side substrate 8 under specific wavelength can not be set in the particular range sometimes.In addition, when the cooperation ratio of micro mist shape filler exceeds above-mentioned scope, can not give the cathode side substrate 8 sufficient flexibilities sometimes.
And, when making filler dispersion film, in resin, cooperate micro mist shape filler, with they even mixing with aforementioned proportion.When mixing each composition, by for example mixing mill, adding pressure type kneader, extruder etc. that mentioned component is mixing, obtain mixing thing.
Can heat as required when mixing, heating condition is for example more than 100 ℃, is preferably more than 200 ℃, is generally below 400 ℃.
Then, the forming method by for example mixing mill, stack, extrusion molding, extrusion forming etc. is configured as sheet (film) shape with the mixing thing of gained.Make filler thus and disperse film.
In addition, when making filler dispersion film, can also in the raw material (monomer component) of above-mentioned resin, cooperate micro mist shape filler, make polymerizable raw material then, obtain polymer, and use above-mentioned forming method that resulting forming polymer is sheet (film) shape.This method can also cooperate micro mist shape filler to replace cooperation in raw material in polymerization or after the polymerization, also cooperate micro mist shape filler when perhaps cooperating in raw material, in polymerization or after the polymerization.
And then, as cathode side substrate 8, can also list the flexible film that in liquid crystal polymer, is dispersed with micro mist shape filler (below be called " liquid crystal polymer film that contains filler ".)。
As the liquid crystal polymer in the liquid crystal polymer film that contains filler, can list the polymer same with above-mentioned liquid crystal polymer, in addition,, can list and the same filler of above-mentioned micro mist shape filler as micro mist shape filler.
Contain in the liquid crystal polymer film of filler, the cooperation ratio of micro mist shape filler for for example 1～50 weight portion, is preferably 5～40 weight portions with respect to 100 weight portion liquid crystal polymers, more preferably 10～30 weight portions.
The liquid crystal polymer film that contains filler can be to disperse the same mode of the making of film to make with above-mentioned filler.
In addition, the film by above-mentioned moulding can also stretch as required.Film shaped when being strip when what do not stretch, with for example 1.1～5 times of the stretching ratios of longitudinally, the stretching ratio of Width (direction vertical with longitudinally) for example 1.1～5 times mode stretches.
The thickness of the cathode side substrate 8 that obtains like this is for for example, and 5～500 μ m are preferably 8～100 μ m, more preferably 12～50 μ m.When the not enough above-mentioned scope of the thickness of cathode side substrate 8, operability reduces sometimes, and when the thickness of cathode side substrate 8 exceeded above-mentioned scope, cost increased sometimes.
And this cathode side substrate 8 has the reflectivity to sunlight (visible light etc. specifically), specifically, is more than 30% to the reflection of light rate of at least 1 wavelength under the scope of wavelength 400～750nm.
More particularly, the reflection of light rate of 8 pairs of at least 1 wavelength under the scope of wavelength 400～750nm of cathode side substrate is preferably more than 35%, more preferably more than 40%, especially is preferably more than 45%, is generally below 90%.
When to the not enough above-mentioned scope of the reflection of light rate of above-mentioned wavelength, cathode side substrate 8 can not reflect the light of above-mentioned wavelength effectively, therefore can not increase generating efficiency effectively.
The reflectivity of cathode side substrate 8 for example, can wait by spectrophotometer and measure.
In addition, to electrode 3, specifically also have cathode side conductive layer 9 and catalyst layer 10 as conductive layer.
Cathode side conductive layer 9 forms on cathode side substrate 8, specifically, by conductive film constitute, Width on cathode side substrate 8 midway (middle part) form.Specifically, cathode side conductive layer 9 forms in the following manner: when along the thickness direction projection, cathode side conductive layer 9 is comprised in the dye-sensitized semiconductor layer 7, and the Width two side portions of cathode side substrate 8 is exposed.
In addition, the area of cathode side conductive layer 9 is for example 1～100% with respect to the area of the cathode side substrate 8 of sealant 11 (aftermentioned) inside, is preferably 1～95%.
As the electric conducting material that is used to form cathode side conductive layer 9, can list and form the same electric conducting material of electric conducting material of above-mentioned anode side conductive layer 6, be preferably gold, silver, copper, platinum, nickel, tin, ITO, FTO, carbon.So long as this electric conducting material then has the advantage of the electronics of giving and accepting effectively.
These electric conducting materials can use separately or also use more than 2 kinds.
The resistivity of cathode side conductive layer 9 is for example 1.0 * 10
-2Below the Ω cm, be preferably 1.0 * 10
-3Below the Ω cm, more preferably 1.0 * 10
-5Below the Ω cm.
In addition, the thickness of cathode side conductive layer 9 is preferably 1～50 μ m for for example 0.1～100 μ m.When the not enough above-mentioned scope of the thickness of cathode side conductive layer 9, conductivity excessively reduces (resistivity excessively increases) sometimes, and when the thickness of cathode side conductive layer 9 exceeded above-mentioned scope, cost increased sometimes, or is difficult to slimming.
In addition, the reflection of light rate of 9 pairs of at least 1 wavelength under the scope of wavelength 400～750nm of cathode side conductive layer, is preferably more than 5% more than 1% for for example, more preferably more than 10%, is generally below 99%.Perhaps the optical transmission rate of 9 pairs of at least 1 wavelength under the scope of wavelength 400～750nm of cathode side conductive layer is for example more than 0%, is preferably more than 10%, more preferably more than 20%, is generally below 95%.
In addition, when the reflectivity of cathode side conductive layer 9 is in above-mentioned scope, reflect the light of specific wavelength sometimes effectively by cathode side conductive layer 9, improve generating efficiency.
When the transmissivity of cathode side conductive layer 9 was in above-mentioned scope, by cathode side conductive layer 9 light of transmission specific wavelength effectively, reflection reached the top light of the cathode side substrate 8 that is covered by cathode side conductive layer 9 effectively, improves generating efficiency sometimes.
In addition, when along the thickness direction projection, catalyst layer 10 is comprised in the dye-sensitized semiconductor layer 7, one side surface of Width is between Width one side surface of Width one side surface of dye-sensitized semiconductor layer 7 and cathode side conductive layer 9, and the opposite side surface of Width is between the Width opposite side surface of the Width opposite side surface of dye-sensitized semiconductor layer 7 and cathode side conductive layer 9.
In addition, the area of catalyst layer 10 is for example 1～100% with respect to the area of the cathode side substrate 8 of sealant 11 inboards, is preferably 5～100%.In addition, the area of catalyst layer 10 is for example 10～500% with respect to the area of cathode side conductive layer 9, is preferably 50～500%.
Material as forming catalyst layer 10 can list for example precious metal materials such as platinum, ruthenium, rhodium, conductivity organic materials such as for example poly-dioxy thiophene, polypyrrole, for example carbonaceous material such as carbon etc.Preferably enumerate platinum, carbon.So long as these materials then have the advantage of the electronics of effectively giving and accepting.
These materials can use separately or also use more than 2 kinds.
The thickness of catalyst layer 10 is for example 50nm～100 μ m, is preferably 100nm～50 μ m.When the not enough above-mentioned scope of the thickness of catalyst layer 10, can not realize fully sometimes that by the electrolyte accelerating oxidation reduction reaction in the electrolyte 4 generating efficiency reduces.When the thickness of catalyst layer 10 exceeded above-mentioned scope, cost increased sometimes.
In addition, the reflection of light rate of 10 pairs of at least 1 wavelength under the scope of wavelength 400～750nm of catalyst layer is preferably more than 10% for for example more than 0%, more preferably more than 20%, is generally below 95%.Perhaps the optical transmission rate of 10 pairs of at least 1 wavelength under the scope of wavelength 400～750nm of catalyst layer is preferably more than 10% for for example more than 0%, more preferably more than 20%, is generally below 95%.
In addition, when the reflectivity of catalyst layer 10 is in above-mentioned scope, can reflect the light of specific wavelength sometimes effectively, thereby improve generating efficiency by catalyst layer 10.
When the transmissivity of catalyst layer 10 is in above-mentioned scope, sometimes can be by catalyst layer 10 light of transmission specific wavelength effectively, reflection arrives the top light of the cathode side substrate 8 that is covered by catalyst layer 10 effectively, thereby improves generating efficiency.
The thickness of electrode 3 for for example 10～1000 μ m, is preferably 10～500 μ m.
In addition, when making this dye-sensitized solar cell 1, at first to prepare (or making) work electrode 2 respectively, to electrode 3 and electrolyte 4.
Work electrode 2 is made by stack gradually anode-side substrate 5, anode side conductive layer 6 and dye-sensitized semiconductor layer 7 downwards at thickness direction.
When making, at first to prepare or make cathode side substrate 8 to electrode 3.
Then, as required by carrying out surface treatment above plasma treatment or the physical vapor deposition target side group plate 8.These surface treatments can be used separately or also use more than 2 kinds.
As plasma treatment, for example can list nitrogen plasma treatment.The condition of nitrogen plasma treatment is described below.
Pressure (decompression degree): 0.01～100Pa is preferably 0.05～10Pa
Import nitrogen flow: 10～1000SCCM (Standard CC/Min), be preferably 10～300SCCM
Treatment temperature: 0～150 ℃, be preferably 0～120 ℃
Power: 30～1800W is preferably 150～1200W
Processing time: 0.1～30 minute, be preferably 0.15～10 minute
By nitrogen plasma treatment, cathode side substrate 8 top by nitrogenize.
As physical vapor deposition, can list for example vacuum evaporation, ion plating, sputter etc., be preferably sputter.
As sputter, can list for example is the metal sputtering of target with metals such as nickel, chromium.By metal sputtering formation metallic film (not having diagram) on cathode side substrate 8.The thickness of metallic film is preferably 10～500nm for for example 1～1000nm.
By above-mentioned surface treatment, can improve the adaptation of cathode side conductive layer 9 target side group plates 8.
Then, on cathode side substrate 8, form cathode side conductive layer 9.
Cathode side conductive layer 9 for example forms above-mentioned pattern by print process, gunite, physical vapor deposition, additive process, the method for residues (Subtractive Method) etc.
Print process, the paste of particulate that for example will contain above-mentioned electric conducting material with above-mentioned pattern silk screen printing on cathode side substrate 8.
Gunite, for example elder generation in known decentralized medium, modulates dispersion liquid with the microparticulate of above-mentioned electric conducting material.In addition, by opening have predetermined pattern mask covered cathode side group plate 8 above.Then, pay the dispersion liquid of (injection) modulation from cathode side substrate 8 and the spray of mask top.Remove mask then, make the decentralized medium evaporation.
As physical vapor deposition, preferably use sputter.Specifically, on the mask covered cathode side group plate 8 of predetermined pattern is arranged by opening after, be that target carries out sputter with for example metal material, metal oxide materials, remove mask then.
In the additive process, for example first conductor thin film (kind film) that formation does not illustrate on cathode side substrate 8.Conductor thin film is to come stacked chromium thin film by sputter, preferred chromium sputter.In addition, in the formation of conductor thin film, when forming metallic film, can have the surface treatment of cathode side substrate 8 concurrently by above-mentioned surface treatment (physical vapor deposition).
Then, form anti-coating with reverse tone above the conductor thin film, then by electroplating formation cathode side conductive layer 9 on the conductor thin film that exposes from anti-coating with above-mentioned pattern at this.Then, remove anti-coating and with this anti-coating the conductor thin film of stacked part.
In the method for residues, for example prepare earlier 2 layers of base material (covering 2 layers of base material of copper etc.) at the stacked in advance conductor foil that forms by above-mentioned electric conducting material on cathode side substrate 8, stacked dry film photoresist on this conductor foil again, expose then and develop, form and the identical resist of above-mentioned cathode side conductive layer 9 patterns.Then, the conductor foil that uses for example etching solution chemical etching of ferric chloride in aqueous solution etc. to expose from resist is removed resist then.
In addition, in the preparation of 2 layers of base material, can by thermal welding with conductor foil join to cathode side substrate 8 above, or between cathode side substrate 8 and conductor foil, clip known cement layer.
In addition, when forming cathode side conductive layer 9 by the above-mentioned method of residues, can use commercially available product as covering 2 layers of base material of copper, for example, as the liquid crystal polymer copper-clad laminated board that on liquid crystal polymer film, is laminated with Copper Foil in advance, can use ESPANEXL series (standard type/P type, chemistry society of Nippon Steel system), BIAC-RF-CLAD series (Japan Gore-Tex Inc. system) etc.
Then, the mode with covered cathode side conductive layer 9 forms catalyst layer 10 on cathode side substrate 8.
When forming catalyst layer 10 by noble metal, preferably use physical vapor deposition (for example, vacuum evaporation, sputter etc.), when by the conductivity organic compound, when carbonaceous material forms catalyst layer 10, can use print process, gunite.
Make thus electrode 3.
Then, in the adjacent mode of dye-sensitized semiconductor layer 7 and catalyst layer 10 across the interval subtend configuration effort electrode 2 that is provided with sealant 11 with to electrode 3.Meanwhile, at work electrode 2 with to a side of the Width between the electrode 3 sealant 11 is set, then, injects electrolyte 4 to work electrode 2 with between electrode 3, and then sealant 11 is set, hermetic electrolyte matter 4 at work electrode 2 with to the opposite side of the Width between the electrode 3.
In addition, though not open, also be provided with sealant 11 at fore-and-aft direction (with the Width direction vertical with thickness direction) and come encapsulated dielectric 4 this moment.
Can make dye-sensitized solar cell 1 thus.
In addition, according to the dye-sensitized solar cell 1 that obtains like this, electrode 3 is had the reflection of light rate of the specific wavelength cathode side substrate 8 at particular range.Therefore, can reflect the sunlight of the light that contains specific wavelength effectively, the sunlight of reflected back can be supplied to once more work electrode 2 to produce electronics to electrode 3.The result can improve generating efficiency.
And then, because the reflectivity of cathode side substrate 8 is at particular range,, can improve generating efficiency with easy formation so do not need to be provided with separately the reflection layer of patent documentation 1 or 2 or light scattering reflector etc.Therefore, can omit the manufacturing process in reflection layer or light scattering reflector, thereby can when improving generating efficiency, further realize cost degradation with easy formation.
Fig. 3 is the profile to electrode (state with cathode side substrate and cathode side conductive layer) of other execution mode of dye-sensitized solar cell of the present invention.Fig. 4～Fig. 7 is other the profile of execution mode of dye-sensitized solar cell of the present invention, Fig. 4 shows the state that clips the cathode side conductive layer between cathode side substrate and the electrolyte, Fig. 5 show the cathode side substrate that exposes from catalyst layer above left part contact with electrolyte, and the right flank of cathode side conductive layer and catalyst layer and sealant state of contact, Fig. 6 show the cathode side substrate that exposes from catalyst layer above left part contact with electrolyte, and the right flank of catalyst layer and sealant state of contact, Fig. 7 shows the state that anode side conductive layer and cathode side conductive layer are connected with the current collection distribution.
In addition, the pairing parts of each part mentioned above use identical reference marker in each accompanying drawing of back, and omit its detailed description.
In the above-mentioned explanation, on to electrode 3, be provided with catalyst layer 10, but also can be for example as shown in Figure 3, catalyst layer 10 is not set and forms electrode 3 by cathode side substrate 8 and cathode side conductive layer 9.
And then, also can have cathode side conductive layer 9 and catalyst layer 10 simultaneously concurrently.In this kind situation, preferably the carbonaceous material by carbon etc. forms cathode side conductive layer 9.
In addition, in the above-mentioned explanation, on cathode side substrate 8, cathode side conductive layer 9, catalyst layer 10 and the part of exposing from sealant 11 contact with electrolyte 4, but for example can be as shown in Figure 4, form with the mode that the medial surface of sealant 11 contacts by the Width two sides that make cathode side conductive layer 9, the whole top of cathode side substrate 8 covered by cathode side conductive layer 9 and sealant 11.
Among Fig. 4, cathode side conductive layer 9 spreads all over formation between the sealant 11 at Width.That is to say that along the thickness direction projection time, the two sides of the Width of the two sides of the Width of cathode side conductive layer 9 and dye-sensitized semiconductor layer 7 are in same position.That is to say that cathode side conductive layer 9 is sandwiched between cathode side substrate 8 and electrolyte 4 and the catalyst layer 10.
The area of catalyst layer 10 be for example cathode side substrate 8 of sealant 11 inboards area (that is, the area of cathode side conductive layer 9) 5～99%, be preferably 10～90%.
In addition, also can be as shown in Figure 5, form with the mode that inboard (left side) face of the sealant 11 of one (right side) side of Width contacts with a side (right side) face of the Width of cathode side conductive layer 9 and catalyst layer 10.
Among Fig. 5, the area of cathode side conductive layer 9 be for example cathode side substrate 8 of sealant 11 inboards area 5～95%, be preferably 5～90%.
The area of catalyst layer 10 be for example cathode side substrate 8 of sealant 11 inboards area 10～99%, be preferably 10～95%.In addition, the area of catalyst layer 10 be for example cathode side conductive layer 9 area 101～1900%, be preferably 101～500%.
And then can also be as shown in Figure 6, form with the mode that inboard (left side) face of the sealant 11 of one (right side) side of Width contacts with a side (right side) face of the Width of catalyst layer 10.
Among Fig. 6, the area of cathode side conductive layer 9 be for example cathode side substrate 8 of sealant 11 inboards area 10～90%, be preferably 15～85%.
The area of catalyst layer 10 be for example cathode side substrate 8 of sealant 11 inboards area 15～95%, be preferably 20～95%.In addition, the area of catalyst layer 10 be for example cathode side conductive layer 9 area 115～950%, be preferably 120～800%.
And then, can also along Width a plurality of dye-sensitized semiconductor layers 7 and catalyst layer 10 be set as shown in Figure 7, and current collection distribution 12 is set between them.
Each dye-sensitized semiconductor layer 7 and each catalyst layer 10 across neat configuration at interval, when along the thickness direction projection, all are in same position at Width.
Anode side conductive layer 6 forms below anode-side substrate 5 whole.
In addition, cathode side conductive layer 9 forms on cathode side substrate 8 whole.
In work electrode 2, form a plurality of current collection distributions 12 between each the dye-sensitized semiconductor layer 7 below anode side conductive layer 6, each current collection distribution 12 on Width with dye-sensitized semiconductor layer 7 across arranged spaced.Current collection distribution 12 in the work electrode 2 is electrically connected with anode side conductive layer 6.
In addition, in to electrode 3, form a plurality of current collection distributions 12 between each catalyst layer 10 on cathode side conductive layer 9, each current collection distribution 12 on Width with catalyst layer 10 across arranged spaced.Current collection distribution 12 in the electrode 3 is electrically connected with cathode side conductive layer 9.
The area of current collection distribution 12 be for example cathode side substrate 8 of sealant 11 inboards area 1～50%, be preferably 1～20%.
The area of catalyst layer 10 be for example cathode side substrate 8 of sealant 11 inboards area 10～95%, be preferably 20～95%.In addition, the area of catalyst layer 10 be for example cathode side conductive layer 9 the area area of cathode side substrate 8 (promptly) 10～95%, be preferably 20～95%.
The electric conducting material and the above-mentioned electric conducting material that form current collection distribution 12 are same.The thickness of current collection distribution 12 is preferably 0.5～20 μ m for for example 0.5～50 μ m.
In addition, on current collection distribution 12 surfaces, be formed with protective layer 13 in order to prevent electrolyte 4 corrosion current collection distributions 12.
Material as forming protective layer 13 can list for example resin material such as epoxy resin, acrylic resin, for example, and metal materials such as nickel, gold.The thickness of protective layer 13 is for example 0.5～30 μ m.
This dye-sensitized solar cell 1 comes the electric current of current collection multi beam anode side conductive layer 6 and cathode side conductive layer 9 by a plurality of current collection distributions 12, thereby improves generating efficiency.
Embodiment
The cathode side substrate (with reference to Fig. 2) that preparation is formed by liquid crystal polymer film (VECSTAR, thickness 25 μ m, Kuraray Co.LTd system).
Use the reflection of light rate of the cathode side substrate of spectrophotometer (V-670, Japanese beam split society system) preparation of determine to the scope of wavelength 300～800nm.The result as shown in Figure 8.
In addition, the fusing point of cathode side substrate is 295 ℃, and (JIS C-6481, condition: be 0.04% E-24/50+D-24/23), linear expansion coefficient (50～100 ℃) is 17ppm/ ℃ to water absorption rate.
Then, by carrying out nitrogen treatment above the nitrogen plasma treatment target side group plate.The condition of nitrogen plasma treatment is described below.
Pressure (decompression degree): 1.2Pa
Import nitrogen flow: 70SCCM
Treatment temperature: 21 ℃
Power: 200W
Processing time: 0.5 minute
Then, will form above-mentioned pattern (with reference to Fig. 2) by the cathode side conductive layer that copper constitutes by additive process.
That is to say, sputter at earlier the conductor thin film that constitutes by chromium thin film of the top formation thickness 100nm of cathode side substrate by chromium.Then, form anti-coating with the reverse tone with above-mentioned pattern at this above the conductor thin film, the surface that is plated in the conductor thin film that exposes from anti-coating by cupric electrolysis forms the cathode side conductive layer of thickness 18 μ m then.Then, remove anti-coating and with the conductor thin film of the stacked part of this anti-coating.
The resistivity of cathode side conductive layer is 1.76 * 10
-6Ω cm.In addition, the area of cathode side conductive layer be the cathode side substrate area 50%.
Then, form the catalyst layer that constitutes by carbon by print process pattern with covered cathode side conductive layer surface on the cathode side substrate.
That is to say,, form the catalyst layer (with reference to Fig. 2) of thickness 20 μ m with above-mentioned pattern silk screen printing carbon paste.
The area of catalyst layer be the cathode side substrate area 60%, be 120% of the area of cathode side conductive layer.
Made thus thickness shown in Figure 2 63 μ m to electrode.
Embodiment 2
In the preparation of cathode side substrate, substitute liquid crystal polymer film (VECSTAR, thickness 25 μ m, Kuraray Co.LTd system) and use filler to disperse film (Diafoil W-100, thickness 50 μ m, resin society of Mitsubishi system), in addition, operation is made electrode similarly to Example 1.
In addition, this filler dispersion film (Diafoil W-100) is the sheet material that has cooperated titanium oxide in PET.
Use the reflection of light rate of the cathode side substrate of spectrophotometer (V-670, Japanese beam split society system) preparation of determine to wavelength 300～800nm.The result as shown in Figure 8.
In addition, (JIS C-6481, condition: be 0.4% E-24/50+D-24/23), linear expansion coefficient (50～100 ℃) is 15ppm/ ℃ to the water absorption rate of cathode side substrate.
Substitute liquid crystal polymer film (VECSTAR, thickness 25 μ m, Kuraray Co.LTd system) and use liquid crystal polymer film (BIAC, thickness 25 μ m, Japan Gore-Tex Inc system), in addition, operation is made electrode similarly to Example 1.
Use the reflection of light rate of the cathode side substrate of spectrophotometer (V-670, Japanese beam split society system) preparation of determine to the scope of wavelength 300～800nm.The result as shown in Figure 8.
In addition, the water absorption rate of cathode side substrate (JIS C-6481, condition: E-24/50+D-24/23) be 0.04%, linear expansion coefficient (50～100 ℃) is 16ppm/ ℃.
Comparative example 1
In the preparation of cathode side substrate, substitute liquid crystal polymer film (VECSTAR, thickness 25 μ m, Kuraray Co.LTd system) and use PET film (name of an article " TeToron ", thickness 25 μ m, society of Supreme Being people Du Pont system), in addition, operation is made electrode similarly to Example 1.
Use the reflection of light rate of the cathode side substrate of spectrophotometer (V-670, Japanese beam split society system) preparation of determine to the scope of wavelength 300～800nm.The result as shown in Figure 8.
In addition, (JIS C-6481, condition: be 0.4% E-24/50+D-24/23), linear expansion coefficient (50～100 ℃) is 15ppm/ ℃ to the water absorption rate of cathode side substrate.
Comparative example 2
In the preparation of cathode side substrate, substitute liquid crystal polymer film (VECSTAR, thickness 25 μ m, Kuraray Co.LTd system) and use PEN film (TEONEX Q51, thickness 25 μ m, society of Supreme Being people Du Pont system), in addition, operation is made electrode similarly to Example 1.
Use the reflection of light rate of the cathode side substrate of spectrophotometer (V-670, Japanese beam split society system) preparation of determine to the scope of wavelength 300～800nm.The result as shown in Figure 8.
In addition, (JIS C-6481, condition: be 0.3% E-24/50+D-24/23), linear expansion coefficient (50～100 ℃) is 13ppm/ ℃ to the water absorption rate of cathode side substrate.
The concrete condition of the cathode side substrate of each embodiment and each comparative example has been shown in the table 1.
Table 1
※ 1:VECSTAR, Kuraray Co.LTd system
※ 2:Diafoil W-100, resin society of Mitsubishi system
※ 3:BIAC, Japan Gore-Tex Inc. system
In addition, though above-mentioned explanation provides the execution mode of enumerating of the present invention, this only for for example, can not be used to carry out limited explanation.The variation tangible of the present invention of being made by those skilled in the art is also included within the claim scope described later.
Claims (4)
1. a dye-sensitized solar cell is characterized in that, described dye-sensitized solar cell has:
Work electrode,
With above-mentioned work electrode across interval subtend configuration to electrode and
Be filled in above-mentioned work electrode and above-mentioned to the electrolyte between the electrode,
It is described that electrode is had reflection of light rate at least 1 wavelength under the scope of wavelength 400～750nm is substrate more than 30%.
2. dye-sensitized solar cell according to claim 1 is characterized in that, described substrate is the flexible thin film who is formed by liquid crystal polymer.
3. dye-sensitized solar cell according to claim 1 is characterized in that, described substrate is the flexible thin film who is dispersed with micro mist shape filler.
4. dye-sensitized solar cell according to claim 3 is characterized in that, described micro mist shape filler is a titanium oxide.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009-178082 | 2009-07-30 | ||
| JP2009178082A JP2011034726A (en) | 2009-07-30 | 2009-07-30 | Electrode for dye-sensitized solar cell and dye-sensitized solar cell |
| JP2009-202755 | 2009-09-02 | ||
| JP2009202755A JP2011054434A (en) | 2009-09-02 | 2009-09-02 | Dye-sensitized solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101989500A true CN101989500A (en) | 2011-03-23 |
Family
ID=43745989
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010102407616A Pending CN101989500A (en) | 2009-07-30 | 2010-07-27 | Dye-sensitized solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101989500A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103035943A (en) * | 2012-12-25 | 2013-04-10 | 天津市捷威动力工业有限公司 | Polymer electrolyte additive and gel polymer cell using same |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000348784A (en) * | 1999-06-07 | 2000-12-15 | Ricoh Co Ltd | Photoelectric transfer element and its manufacture |
| US20070125419A1 (en) * | 2005-12-01 | 2007-06-07 | Gui John Y | Dye sensitized solar cells having blocking layers and methods of manufacturing the same |
| CN101276873A (en) * | 2007-03-30 | 2008-10-01 | 夏普株式会社 | Light emitting device and method of producing the same |
| CN101320629A (en) * | 2008-07-11 | 2008-12-10 | 南开大学 | Counter electrode used for dye sensitization sunlight battery and preparation method thereof |
-
2010
- 2010-07-27 CN CN2010102407616A patent/CN101989500A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000348784A (en) * | 1999-06-07 | 2000-12-15 | Ricoh Co Ltd | Photoelectric transfer element and its manufacture |
| US20070125419A1 (en) * | 2005-12-01 | 2007-06-07 | Gui John Y | Dye sensitized solar cells having blocking layers and methods of manufacturing the same |
| CN101276873A (en) * | 2007-03-30 | 2008-10-01 | 夏普株式会社 | Light emitting device and method of producing the same |
| CN101320629A (en) * | 2008-07-11 | 2008-12-10 | 南开大学 | Counter electrode used for dye sensitization sunlight battery and preparation method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103035943A (en) * | 2012-12-25 | 2013-04-10 | 天津市捷威动力工业有限公司 | Polymer electrolyte additive and gel polymer cell using same |
| CN103035943B (en) * | 2012-12-25 | 2014-10-22 | 天津市捷威动力工业有限公司 | Polymer electrolyte additive and gel polymer cell using same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW201017904A (en) | A photoelectric conversion element module, and a method of manufacturing a photoelectric conversion element module | |
| JP2011119068A (en) | Electrode for dye-sensitized solar cell and dye-sensitized solar cell | |
| EP2337041B1 (en) | Method of fabricating a dye-sensitized solar cell module | |
| US20160155574A1 (en) | Photoelectric conversion element module and method for manufacturing the same | |
| EP2293311A2 (en) | Dye-sensitized solar cell | |
| CN101989497A (en) | Dye-sensitized solar cell electrode and dye-sensitized solar cell | |
| CN109478468A (en) | The manufacturing method of solar cell module and solar cell module | |
| JP4454007B2 (en) | Conductive support and photoelectric conversion element using the same | |
| JP5153215B2 (en) | Photoelectric conversion device | |
| CN101989500A (en) | Dye-sensitized solar cell | |
| CN102064023A (en) | Dye-sensitized solar cell electrode and dye-sensitized solar cell | |
| CN105793942A (en) | Photoelectric conversion element | |
| CN101989498A (en) | Dye-sensitized solar cell electrode and dye-sensitized solar cell | |
| JP5160045B2 (en) | Photoelectric conversion element | |
| JP5095148B2 (en) | Working electrode substrate and photoelectric conversion element | |
| CN105308700B (en) | Dye-sensitized solar cell element | |
| CN104781895B (en) | DSSC element | |
| EP2683019B1 (en) | Dye-sensitized solar cell for low light intensities | |
| JP2005268175A (en) | Module assembly | |
| JP2011040288A (en) | Method of manufacturing semiconductor film, the semiconductor film, and dye-sensitized solar cell | |
| CN106663546B (en) | The electrolyte of low-light (level) dye-sensitized photoelectric conversion element and the low-light (level) dye-sensitized photoelectric conversion element for using the electrolyte | |
| JP2016039212A (en) | Photoelectric conversion layer and photoelectric conversion element including the same | |
| JP2007299709A (en) | Photoelectric conversion device and photovoltaic generator | |
| WO2016104047A1 (en) | Dye-sensitized solar cell | |
| US20220328709A1 (en) | Solar cell module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20110323 |