CN101989046B - Pattern transfer method and mask manufacturing method - Google Patents
Pattern transfer method and mask manufacturing method Download PDFInfo
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- CN101989046B CN101989046B CN 200910056026 CN200910056026A CN101989046B CN 101989046 B CN101989046 B CN 101989046B CN 200910056026 CN200910056026 CN 200910056026 CN 200910056026 A CN200910056026 A CN 200910056026A CN 101989046 B CN101989046 B CN 101989046B
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Abstract
The invention discloses a pattern transfer method and a mask manufacturing method. The pattern transfer method comprises the following steps of: forming a photoresist layer on a substrate, wherein the photoresist layer at least comprises a positive photoresist layer, a negative photoresist layer and a transparent material layer positioned between the positive photoresist layer and the negative photoresist layer; the thickness of the photoresist layer close to the substrate is greater than that of the photoresist layer far away from the substrate and the transparent material layer can be dissolved in a developing agent of the photo-resist layer far away from the substrate; and then exposing the photoresist layer at one time, stepwise developing the photoresist layer and etching the stepwise developed photoresist layer to transfer a pattern to the photoresist layer close to the substrate so as to transfer the photoresist layer to the substrate. In the method, the pattern can be transferred through one-time exposing, so that the number of masks is reduced, production cost is saved, production efficiency is improved, and the critical dimension of the pattern transferred to the photoresist layer is controlled by adjusting exposing energy and developing time.
Description
Technical field
The present invention relates to the figure transfer techniques, especially graph transfer method and mask manufacturing method.
Background technology
High speed development along with integrated circuit (IC) design, the dimension of picture of mask layout dwindles day by day, optical proximity effect is more and more obvious, be that exposure light is when passing mask and projecting on the photoresist of silicon chip surface, formed pattern distortion and deviation can occur compared to mask graph on the photoresist surface, thereby impact is at the formed figure of silicon chip surface, i.e. litho pattern.
With reference to figure 1, because pattern-pitch is too small among mask Figure 110, in the process to mask Figure 110 exposure, the mutual superposition of the exposure light that sees through in the adjacent patterns or counteracting, so that in the litho pattern 120 of the correspondence that obtains, originally should not pattern occur in figuratum position, produce bridge joint.And in other cases, also may occur in the litho pattern 120 should figuratum position, and pattern is the unexposed phenomenon that successfully waits.
Too small when the critical size of design configuration, even during less than the resolution of lithographic equipment, prior art need to split into design configuration at least two mask layouts usually, and adopts double exposure to realize the image transfer of desired design configuration.Fig. 2 to Fig. 4 is the synoptic diagram of an object lesson of prior art, by design configuration being split into two mask layouts, and according to the photoetching that double exposes of these two domains, thereby obtain design configuration.
Specifically, with reference to figure 2, at first according to the resolution of lithographic equipment, design configuration 100 is split into two mask layouts, be first published masterplate Figure 101 and second mask Figure 102, wherein, the critical size d2 among the critical size d1 of first published masterplate Figure 101 or second mask Figure 102 is greater than the resolution of lithographic equipment.
Then, with reference to figure 3, adopt first first mask Figure 101 to expose and develop, first mask Figure 101 is transferred on the photoresist layer 201 on the silicon chip 200, carries out etching take photoresist layer 201 figures as mask, and then figure is transferred on the silicon chip 200, then, spin coating photoresist 202 again.
Then, with reference to figure 4, according to second mask Figure 102, expose and develop, mask Figure 102 is transferred on the photoresist layer 202 on the silicon chip 200, and carry out etching take photoresist layer 202 as mask, finally obtain design configuration at silicon chip 200.
Yet, adopt existing photoetching technique, not only need to make at least two masks, increased the production cost of each photoetching process, also need to expend a large amount of manpowers and time, affected production efficiency.In addition, also can namely adopt the lithographic equipment with less resolution by the upgrading lithographic equipment, realize better etching effect, however this also so that the photoetching cost greatly increase.
Summary of the invention
The problem that the present invention solves provides a kind of graph transfer method and mask manufacturing method, for the figure of spacing less than resolution of photoetching equipment, adopts the photoetching method of single exposure to get final product.
For addressing the above problem, according to an aspect of the present invention, a kind of graph transfer method is provided, comprise: form photoresist layer at substrate, described photoresist layer comprises positive photoresist layer and negative photoresist layer at least, and be positioned between the two transparent material layer, wherein, the thickness of the photoresist layer that the described substrate of distance is near can be dissolved in the developer of the described photoresist layer far away apart from substrate greater than the thickness of the described substrate of distance photoresist layer far away and described transparent material layer; According to figure to be transferred, described photoresist layer is exposed; Remove selectively described photoresist layer, described figure to be transferred is transferred to described apart from the near photoresist layer of substrate; Remove the described substrate of distance photoresist layer far away; According near photoresist layer and the transparent material layer of described photoresist layer middle distance substrate, described substrate is carried out etching, realize that described figure to be transferred is to the transfer of described substrate.
According to a further aspect in the invention, also provide a kind of mask manufacturing method, having comprised: form layer of mask material at substrate; Form photoresist layer in described layer of mask material, described photoresist layer comprises positive photoresist layer and negative photoresist layer at least, and be positioned between the two transparent material layer, wherein, the thickness of the described layer of mask material of distance photoresist layer far away can be dissolved in the developer of the described photoresist layer far away apart from substrate less than the thickness of the near photoresist layer of the described layer of mask material of distance and described transparent material layer; According to design configuration, described photoresist layer is exposed; Remove selectively described photoresist layer, design configuration is transferred to described apart from the near photoresist layer of layer of mask material; Remove the described layer of mask material of distance photoresist layer far away; According near photoresist layer and the transparent material layer of described photoresist layer middle distance layer of mask material, described layer of mask material is carried out etching, form mask.
Compared with prior art, the present invention has the following advantages: by be mingled with transparent material layer between positive photoresist and reflexive photoresist layer, so that when exposing, positive photoresist and reflexive photoresist can expose simultaneously, and play the mask effect with the transparent material layer between positive photoresist and the reflexive photoresist layer, realize that by etching technics spacing arrives the transfer of described photoresist layer less than the figure of resolution of photoetching equipment, and then realize figure from described photoresist layer to described substrate or the transfer on the described layer of mask material by etching technics, the diffraction effect that has produced when having avoided being transferred on the described photoresist layer less than the figure of resolution of photoetching equipment spacing by exposure technology, and the phenomenons such as bridge joint of the figure that then on described substrate or described layer of mask material, shows.
Further, embodiment of the present invention comprises that by employing positivity and the formed photoresist layer of the two-layer photoresist of negativity carry out photoetching, only need single exposure just can realize the transfer of figure, the mask of exposure frequency and required making and a large amount of manpower, time have been reduced, save production cost, improved production efficiency.
Description of drawings
Fig. 1 is in the prior art because the floor map of the too small generation bridge joint of mask pattern spacing;
Fig. 2 to Fig. 4 adopts the double exposure of prior art to the diagrammatic cross-section of design configuration exposure formation mask;
Fig. 5 is the schematic flow sheet of a kind of embodiment of graph transfer method of the present invention;
Fig. 6 is the schematic flow sheet of a step S1 embodiment among Fig. 5;
Fig. 7-Fig. 9 is the device profile synoptic diagram that step S1 specific embodiment obtains in the execution graph 5;
Figure 10 is the device profile synoptic diagram that the another kind of embodiment of step S1 obtains in the execution graph 5;
Figure 11 is the device profile synoptic diagram that step S2 embodiment obtains in the execution graph 5;
Figure 12 is the schematic flow sheet of a step S3 embodiment among Fig. 5;
Figure 13 carries out the device profile synoptic diagram that step S31 embodiment obtains among Figure 12;
Figure 14 carries out the device profile synoptic diagram that step S32 embodiment obtains among Figure 12;
Figure 15 is the device profile synoptic diagram that step S4 embodiment obtains in the execution graph 5;
Figure 16 is the device profile synoptic diagram that step S5 embodiment obtains in the execution graph 5;
Figure 17 is the schematic flow sheet of a kind of embodiment of mask manufacturing method of the present invention.
Embodiment
The invention provides a kind of graph transfer method and mask manufacturing method, utilized the different qualities of positive photoresist and reflexive photoresist, on the basis of existing lithographic equipment, only adopt single exposure just can realize the transfer of figure, thereby manpower and time have greatly been saved, improve production efficiency, saved production cost.
Below in conjunction with the drawings and specific embodiments, graph transfer method embodiment of the present invention is described further.
With reference to figure 5, the invention provides a kind of graph transfer method, comprise: step S1, form photoresist layer at substrate, described photoresist layer comprises positive photoresist layer and negative photoresist layer at least, and be positioned between the two transparent material layer, wherein, the thickness of the photoresist layer that the described substrate of distance is near can be dissolved in the developer of the described photoresist layer far away apart from substrate greater than the thickness of the described substrate of distance photoresist layer far away and described transparent material layer; Step S2 according to figure to be transferred, exposes to described photoresist layer; Step S3 removes described photoresist layer selectively, described figure to be transferred is transferred to described apart from the near photoresist layer of substrate; Step S4 removes the described substrate of distance photoresist layer far away; Step S5 according near photoresist layer and the transparent material layer of described photoresist layer middle distance substrate, carries out etching to described substrate, realizes that described figure to be transferred is to the transfer of described substrate.
Wherein, described figure to be transferred comprises four at least to each other apart from less than the pattern of resolution of photoetching equipment, and described first size and described the second size are determined by the spacing of per two patterns of the pattern in interval respectively.
Wherein, described transparent material layer can be top anti-reflective layer (TARC).
Specifically, step S1 can comprise: form the positive photoresist layer at described substrate first, then form transparent material layer at described positive photoresist layer, and then form the negative photoresist layer at described transparent material layer; Wherein, the thickness of described positive photoresist layer is greater than the thickness of described negative photoresist layer, and described transparent material can be dissolved in the developer of described negative photoresist.Because the positive photoresist layer has than the better resolving power of negative photoresist layer, therefore, figure to be transferred is transferred to first described positive photoresist layer, carry out etching take described positive photoresist layer as mask again, further figure is transferred on the described substrate, can makes the figure that forms at described substrate have better critical size.
In a kind of embodiment, with reference to figure 6, step S1 can comprise: step S11 applies positive photoresist at substrate; Step S12 carries out front baking to the substrate that has applied positive photoresist, makes the solvent evaporates in the described positive photoresist layer; Step S13 forms described transparent material layer at described positive photoresist, and wherein, described transparent material layer can be dissolved in the developer of described reflexive photoresist; Step S14 carries out front baking to the substrate with positive photoresist and transparent material, makes solvent evaporates wherein; Step S15 at described transparent material layer coating reflexive photoresist, makes the thickness of described reflexive photoresist less than the thickness of described positive photoresist; Step S16 carries out front baking to the substrate that has applied photoresist layer, so that the solvent evaporates in the described reflexive photoresist.
With reference to figure 7 to Fig. 9 and in conjunction with Fig. 6, take described transparent material layer as example as TARC, S1 is elaborated to step.
With reference to figure 7, execution in step S11, specifically, in a kind of specific embodiment, can adopt static gluing method, specifically, when substrate 300 is static, drip positive photoresist at substrate 300, then make substrate 300 accelerate rotation, get rid of unnecessary positive photoresist and positive photoresist is distributed at substrate 300 surface uniforms; In another kind of specific embodiment, also can adopt dynamic gluing method, for example, make substrate 300 keep the low speed rotation state, drip positive photoresist this moment, then makes substrate 300 accelerate rotation, gets rid of unnecessary positive photoresist and form equally distributed positive photoresist layer 301 at substrate surface.
Then, execution in step S12 by the technique desolventizing of front baking, strengthens the adhesion of photoresist, discharges the stress in the photoresist film, and prevents that photoresist from staining lithographic equipment.Particularly, the temperature and time of described front baking can determine according to the kind of the positive photoresist that adopts respectively, for example, can be under 80-110 ℃ with substrate front baking 50-80 second.
Then, with reference to figure 8, execution in step S13 forms TARC302 at positive photoresist layer 301.Wherein, can according to the different structure of TARC, adopt different formation methods.Those skilled in the art will be understood that the concrete formation method of TARC layer does not cause restriction to invention thinking of the present invention.
Then, execution in step S14 carries out front baking to formed TARC302, and the temperature and time of concrete front baking can be determined according to material and the type of concrete TARC.
Then, with reference to figure 9, execution in step S15 can adopt the glue spreading method identical with step S11, also can adopt different glue spreading methods, obtains negative photoresist layer 303 at TARC302.The thickness of formed negative photoresist layer 303 is less than the thickness of formed positive photoresist layer 301 among the step S11.Wherein the photoresist applied thickness is relevant with kind, rotational speed and the exposure light of photoresist.The kind of photoresist determines the viscosity of photoresist, and viscosity is lower, and the thickness of photoresist is thinner; Rotational speed is faster, and thickness is thinner; The wavelength of exposure light also has certain influence to the thickness of photoresist, for example adopting wavelength is the I line (I-line) of 365nm during as exposure light, and the thickness of photoresist is that the thickness of the photoresist of krypton fluorine (KrF) excimer laser of 248nm or argon fluorine (ArF) excimer laser that wavelength is 193nm wants large compared to adopting wavelength.
At last, by step S16 negative photoresist layer 303 is carried out front baking, specifically can be under 80-110 ℃, front baking 50-80 second.
In addition, before step S11, also can comprise: the cleaning treatment of substrate; Specifically, the available concentrated sulphuric acid boils, so that the substrate surface cleaning, and by deionized water rinsing and oven dry, make substrate surface dry, thereby substrate and photoresist are adhered to well.
In other embodiments, with reference to Figure 10, step S1 also can comprise: form negative photoresist layer 313 at substrate 300 first, then form transparent material layer 312 at negative photoresist layer 313, and then form positive photoresist layer 311 at transparent material layer 312; Wherein, the thickness of negative photoresist layer 313 is greater than the thickness of positive photoresist layer 311, and described transparent material can be dissolved in the developer of described positive photoresist.
After substrate formation comprised positive photoresist layer and negative photoresist layer and is positioned at the photoresist layer of transparent material layer between the two, execution in step S2 adopted the mask of figure to be transferred that it is exposed.Because be transparent material layer between negative photoresist and the positive photoresist in the photoresist layer, therefore, when described photoresist layer was exposed, described negative photoresist layer and positive photoresist will be exposed simultaneously.
In one embodiment, with reference to Figure 11, figure 440 to be transferred comprises five, and wherein, spacing is L1 between pattern 401 and the pattern 403 to each other apart from the pattern 401-404 less than resolution of photoetching equipment, and the spacing between pattern 402 and the pattern 404 is L2.Execution in step S2 adopts the mask of figure to be transferred that photoresist layer 400 is exposed, wherein, photoresist layer 400 according to distance substrate 300 from closely being followed successively by positive photoresist layer 410, transparent material layer 420 and negative photoresist layer 430 to order far away; By the setting to exposure energy, so that exposed portion is of a size of L2 in the positive photoresist layer 410.In a kind of concrete example, described exposure energy can be 20-25 milli Jiao/square centimeter (mJ/cm
2).
Next, execution in step S3.Wherein, the embodiment of step S3 correspondingly, adapts with the embodiment that forms described photoresist layer among the step S1.
In a kind of embodiment, with reference to Figure 12, adapt according to the embodiment that the order of positive photoresist layer, transparent material layer and negative photoresist layer forms described photoresist layer successively with step S1, step S3 can comprise: step S31, negative photoresist layer after the exposure is developed, and by controlling the development time of described negative photoresist layer, remove selectively transparent material layer, so that described transparent material layer opening is of a size of the second size of described figure to be transferred; Step S32 take described transparent material layer as mask, develops to the positive photoresist layer after the exposure.
Specifically, in step S31, in conjunction with Figure 13, in the photoresist layer 500 after exposure, adopt the negativity developer to develop, development time is T2.At first, the part that is exposed of negative photoresist layer 530 contacts with the negativity developer and is dissolved in the negativity developer; Then, because described transparent material is dissolved in the developer of negative photoresist, when the part negative photoresist is removed, correspondingly, is dissolved in described negativity developer with the contacted transparent material of negativity developer in the transparent material layer 520 and then is removed.Development through the T2 time so that the part that negative photoresist layer 530 is exposed is fully dissolved, and has the opening that length is the second size of described figure to be transferred in the transparent material layer 520.In a kind of specific embodiment, described development time can be 50-60 second.
In step S32, in conjunction with Figure 14, take transparent material layer 520 as mask, positivity photoresist layer 510 is developed.Because the barrier effect of transparent material layer 520, the part that is exposed in the positive photoresist layer 510 can't be dissolved in the positivity developer fully also and then be removed, therefore, after developing, not only retain the pattern 511 and 513 that lower part is not exposed in the positive photoresist layer 510, the partial pattern 512 and 514 that can't develop because of stopping of transparent material layer under also retaining.
Wherein, the spacing between pattern 511 and the pattern 513 is exposed the size restrictions of scope, and can make the spacing between pattern 511 and the pattern 513 by the control exposure energy is the first size of described figure to be transferred; And the spacing between pattern 512 and the pattern 514 is subject to the restriction of transparent material, dissolution time by transparent material, can realize making the spacing between pattern 512 and the pattern 514 is the second size of described figure to be transferred, because transparent material is dissolved in the negativity developer, therefore also can be by control negativity development time, with the pattern 512 that need to obtain and the spacing between the pattern 514.
By above-mentioned steps, described figure to be transferred is transferred on the near photoresist layer of substrate.Owing to adopt the dissolution process of transparent material and the developing process of photoresist, form figure to be transferred at photoresist layer, avoid the diffraction effect of bringing by the photoetching process imaging and looked like accordingly bridge joint between the image, thereby realize only passing through the single exposure imaging, just can finish at photoresist layer and obtain spacing less than the pattern of resolution of photoetching equipment; And, by the control to photoresist developing time and exposure energy, realized treating the control of transition diagram critical size.
Next, by step S4 and step S5, the figure on the photoresist layer is transferred on the substrate by etching technics with realization, has guaranteed that the critical size of the figure that forms on substrate and figure to be transferred are consistent.
With reference to Figure 15, in step S4 embodiment, remove the negative photoresist layer 530 of photoresist layer 500.Specifically, can adopt the concentrated sulphuric acid to boil, the glue-line charing is come off, then water flushing.Because the thickness of positive photoresist layer 510 is greater than negative photoresist layer 530, therefore after negative photoresist layer 530 was removed fully, positive photoresist layer 510 still had residue.
With reference to Figure 16, in a kind of embodiment of step S5, according to the positive photoresist layer 510 in the photoresist layer 500 and transparent material layer 520, but the method for using plasma etching forms figure 600 at substrate 300, realization is transferred to figure 440 to be transferred on the substrate 300, and the etching gas that adopts is relevant with the material of substrate 300, for example can adopt chlorine (CL2), hydrogen bromide (HBr), a kind of or its combination in the hydrogen chloride (HCL) is carried out etching to silicon chip.In addition, also can adopt other lithographic method, those skilled in the art should be able to understand, and lithographic method and etching agent concrete among the step S5 do not impact invention thinking of the present invention.
In addition, among the step S5, after being transferred to figure to be transferred on the described substrate, also can comprise: remove near photoresist layer and the described transparent material layer of the described substrate of distance, the concrete method of removing can be determined according to the type of described photoresist and described transparent material.
In the above-mentioned various embodiment, described positive photoresist can be polymethyl acrylate (PMMA) or DQN; Described positivity developer can be the medium-sized aqueous slkalis such as potassium hydroxide (KOH), Tetramethylammonium hydroxide (TMAH), ketone or acetazolamide.Described negative photoresist can be b-rubber impedance agent; Described negativity developer can be xylene solution.Described substrate can be deielectric-coating, and such as silicon dioxide, silicon nitride etc. also can be metal film, and such as aluminium, chromium and compound etc. also can be polysilicon film or monocrystalline substrate.
In addition, with reference to Figure 17, the present invention also provides a kind of mask manufacturing method, comprising: step D1 forms layer of mask material at substrate; Step D2, form photoresist layer in described layer of mask material, described photoresist layer comprises positive photoresist layer and negative photoresist layer at least, and be positioned between the two transparent material layer, wherein, the thickness of the described layer of mask material of distance photoresist layer far away can be dissolved in the developer of the described photoresist layer far away apart from substrate less than the thickness of the near photoresist layer of the described layer of mask material of distance and described transparent material layer; Step D3 according to design configuration, exposes to described photoresist layer; Step D4 removes described photoresist layer selectively, design configuration is transferred to described apart from the near photoresist layer of layer of mask material; Step D5 removes the described layer of mask material of distance photoresist layer far away; Step D6 according near photoresist layer and the transparent material layer of described photoresist layer middle distance layer of mask material, carries out etching to described layer of mask material, forms mask.
Wherein, described design configuration comprises four at least to each other apart from less than the pattern of resolution of photoetching equipment, and described first size and described the second size are determined by the spacing of per two patterns of the pattern in interval respectively.
Wherein, described photoresist layer can comprise: the positive photoresist layer on described layer of mask material, the transparent material layer on described positive photoresist layer, and the negative photoresist layer on described transparent material layer; Wherein, the thickness of described positive photoresist layer can be greater than the thickness of described negative photoresist layer, and described transparent material layer dissolves in the developer of described negative photoresist layer.Because the positive photoresist layer has than the better resolving power of negative photoresist layer, therefore, design configuration is transferred to first described positive photoresist layer, carry out etching take described positive photoresist layer as mask again, further figure is transferred on the described layer of mask material, can makes the figure that forms in described layer of mask material have better critical size.
And in other embodiments, critical size to described mask requires in the not too high situation, described photoresist layer also can comprise: the negative photoresist layer on described layer of mask material, transparent material layer on described negative photoresist layer, and the positive photoresist layer on described transparent material layer; Wherein, the thickness of described negative photoresist layer can be greater than the thickness of described positive photoresist layer, and described transparent material layer dissolves in the developer of described positive photoresist layer.
Wherein, described transparent material layer can be the top anti-reflective layer.
Specifically, in a kind of embodiment of step D1, can adopt magnetically controlled DC sputtering (SP) sedimenting chromium chloride-nitrogen chromium oxide film by on glass substrate smooth, best bright finish, thereby form the chrome mask material layer.In other embodiments, also can adopt other material to be used to form described layer of mask material, and form described layer of mask material by other method for making.
In a kind of embodiment of step D3, by the control exposure energy, make the described photoresist layer exposed portion near apart from layer of mask material be of a size of the first size of described figure to be transferred.Wherein, described exposure energy is 20-25 milli Jiao/square centimeter.
In a kind of embodiment of step D4, at first, the described layer of mask material of distance photoresist layer far away after the exposure is developed, and by controlling the development time of the described layer of mask material of described distance photoresist layer far away, remove selectively transparent material layer, so that described transparent material layer opening is of a size of the second size of described figure to be transferred; Then, take described transparent material layer as mask, the near photoresist layer of the described layer of mask material of distance after the exposure is developed.In a kind of embodiment, described development time is 50-60 second.
Compared to prior art, the respective embodiments described above of the present invention are by being mingled with transparent material layer between positive photoresist and reflexive photoresist layer, so that positive photoresist and reflexive photoresist expose simultaneously, and play the mask effect with the transparent material layer between positive photoresist and the reflexive photoresist layer, realize that by etching technics spacing arrives the transfer of described photoresist layer less than the figure of resolution of photoetching equipment, and then realize figure from described photoresist layer to described substrate or the transfer on the described layer of mask material by etching technics, avoided in the prior art, because when only adopting one deck photoresist layer to expose, the diffraction effect that spacing produces when being transferred on the described photoresist layer less than the figure of resolution of photoetching equipment, and the phenomenons such as bridge joint of the figure that then on described substrate or described layer of mask material, shows.
And, the respective embodiments described above of the present invention comprise that by employing positivity and the formed photoresist layer of the two-layer photoresist of negativity carry out photoetching, only need single exposure just can realize the transfer of figure, with respect to prior art, reduce exposure frequency, correspondingly, reduced the mask of the required making that exposes and manpower and the time of cost, greatly save production cost, improved production efficiency.
And the respective embodiments described above of the present invention can realize the control to the critical size that is transferred to the figure on the described photoresist layer by the adjusting to exposure energy and development time.
Although by the preferred embodiment explanation as above, these preferred embodiments are not to limit the present invention in the present invention.Those skilled in the art without departing from the spirit and scope of the present invention, should have the ability various corrections and additional are made in this preferred embodiment, and therefore, protection scope of the present invention is as the criterion with the scope of claims.
Claims (18)
1. graph transfer method comprises:
Form photoresist layer at substrate, described photoresist layer comprises positive photoresist layer and negative photoresist layer at least, and be positioned between the two transparent material layer, wherein, the thickness of the near photoresist layer of the described substrate of distance can be dissolved in the developer of the described photoresist layer far away apart from substrate greater than the thickness of the described substrate of distance photoresist layer far away and described transparent material layer;
According to figure to be transferred, described photoresist layer is exposed;
Remove selectively described photoresist layer, described figure to be transferred is transferred to described apart from the near photoresist layer of substrate; Wherein, describedly remove selectively the transparent material layer that described photoresist layer refers to remove the developer that can be dissolved in the described photoresist layer far away apart from substrate;
Remove the described substrate of distance photoresist layer far away;
According near photoresist layer and the transparent material layer of described photoresist layer middle distance substrate, described substrate is carried out etching, realize that described figure to be transferred is to the transfer of described substrate.
2. graph transfer method as claimed in claim 1 is characterized in that, described transparent material layer is the top anti-reflective layer.
3. graph transfer method as claimed in claim 1 is characterized in that, describedly forms photoresist layer at substrate, comprising:
At substrate coating one deck photoresist layer;
Substrate is carried out front baking, make the solvent evaporates in the described photoresist layer;
Form transparent material layer at the described photoresist layer near apart from substrate;
Again substrate is carried out front baking;
Apply the photoresist layer of one deck and the described photoresist layer opposed polarity near apart from substrate on described transparent material layer, the thickness of the described photoresist layer far away apart from substrate can be dissolved in the described photoresist layer far away apart from substrate less than thickness and the described transparent material layer of the described photoresist layer near apart from substrate again;
Again substrate is carried out front baking, so that solvent evaporates wherein.
4. graph transfer method as claimed in claim 3 is characterized in that, described front baking adopts 80-110 ℃ temperature, and lasting 50-80 second.
5. graph transfer method as claimed in claim 1 is characterized in that, and is described according to figure to be transferred, and described photoresist layer is exposed, and comprising:
The control exposure energy makes the described photoresist layer exposed portion near apart from substrate be of a size of the first size of described figure to be transferred.
6. graph transfer method as claimed in claim 5 is characterized in that, described exposure energy is 20-25 milli Jiao/square centimeter.
7. graph transfer method as claimed in claim 1 is characterized in that, the described photoresist layer of removing selectively comprises:
The photoresist layer far away apart from substrate after the exposure developed, and the development time by the described photoresist layer far away apart from substrate of control, remove selectively transparent material layer, so that described transparent material layer opening is of a size of the second size of described figure to be transferred;
Take described transparent material layer as mask, the photoresist layer near apart from substrate after the exposure developed.
8. graph transfer method as claimed in claim 7 is characterized in that, described development time is 50-60 second.
9. graph transfer method as claimed in claim 1 is characterized in that, described photoresist layer comprises: at described on-chip positive photoresist layer; Transparent material layer on described positive photoresist layer; Negative photoresist layer on described transparent material layer; Wherein, the thickness of described positive photoresist layer is greater than the thickness of described negative photoresist layer, and described transparent material can be dissolved in the developer of described negative photoresist.
10. graph transfer method as claimed in claim 1 is characterized in that, and is described before substrate forms photoresist layer, also comprises: the cleaning treatment of substrate.
11. graph transfer method as claimed in claim 1 is characterized in that, described realization figure to be transferred arrives after the transfer of described substrate, also comprises: remove near photoresist layer and the described transparent material layer of the described substrate of distance.
12. a mask manufacturing method comprises:
Form layer of mask material at substrate;
Form photoresist layer in described layer of mask material, described photoresist layer comprises positive photoresist layer and negative photoresist layer at least, and be positioned between the two transparent material layer, wherein, the thickness of the described layer of mask material of distance photoresist layer far away can be dissolved in the developer of the described photoresist layer far away apart from substrate less than the thickness of the near photoresist layer of the described layer of mask material of distance and described transparent material layer;
According to design configuration, described photoresist layer is exposed;
Remove selectively described photoresist layer, design configuration is transferred to described apart from the near photoresist layer of layer of mask material; Wherein, describedly remove selectively the transparent material layer that described photoresist layer refers to remove the developer that can be dissolved in the described photoresist layer far away apart from substrate;
Remove the described layer of mask material of distance photoresist layer far away;
According near photoresist layer and the transparent material layer of described photoresist layer middle distance layer of mask material, described layer of mask material is carried out etching, form mask.
13. mask manufacturing method as claimed in claim 12 is characterized in that, described transparent material layer is the top anti-reflective layer.
14. mask manufacturing method as claimed in claim 12 is characterized in that, and is described according to figure to be transferred, and described photoresist layer is exposed, and comprising:
The control exposure energy makes the described photoresist layer exposed portion near apart from layer of mask material be of a size of the first size of described figure to be transferred.
15. mask manufacturing method as claimed in claim 14 is characterized in that, described exposure energy is 20-25 milli Jiao/square centimeter.
16. mask manufacturing method as claimed in claim 12 is characterized in that, removes selectively the described layer of mask material of distance photoresist layer and described transparent material far away, comprising:
The described layer of mask material of distance photoresist layer far away after the exposure is developed, and by controlling the development time of the described layer of mask material of described distance photoresist layer far away, remove selectively transparent material layer, so that described transparent material layer opening is of a size of the second size of described figure to be transferred;
Take described transparent material layer as mask, the near photoresist layer of the described layer of mask material of distance after the exposure is developed.
17. mask manufacturing method as claimed in claim 16 is characterized in that, described development time is 50-60 second.
18. mask manufacturing method as claimed in claim 12 is characterized in that, described photoresist layer comprises: the positive photoresist layer on described layer of mask material; Transparent material layer on described positive photoresist layer; Negative photoresist layer on described transparent material layer; Wherein, the thickness of described positive photoresist layer is greater than the thickness of described negative photoresist layer, and described transparent material can be dissolved in the developer of described negative photoresist.
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| CN1743956A (en) * | 2004-08-31 | 2006-03-08 | 海力士半导体有限公司 | Top anti-reflective coating composition and method for pattern formation of semiconductor device using the same |
| CN1828422A (en) * | 2005-03-04 | 2006-09-06 | 中芯国际集成电路制造(上海)有限公司 | Minute pattern photoetching method |
| CN101154051A (en) * | 2006-09-30 | 2008-04-02 | 中芯国际集成电路制造(上海)有限公司 | Method for forming photo-etching pattern |
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