CN101981671A - Film forming method and semiconductor device manufacturing method - Google Patents

Film forming method and semiconductor device manufacturing method Download PDF

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Publication number
CN101981671A
CN101981671A CN2009801111846A CN200980111184A CN101981671A CN 101981671 A CN101981671 A CN 101981671A CN 2009801111846 A CN2009801111846 A CN 2009801111846A CN 200980111184 A CN200980111184 A CN 200980111184A CN 101981671 A CN101981671 A CN 101981671A
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film
thickness
hfo
oxide
interface oxidation
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下村晃司
上野哲嗣
青山真太郎
中村源志
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Tokyo Electron Ltd
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
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    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
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    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02189—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing zirconium, e.g. ZrO2
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    • H01L21/02107—Forming insulating materials on a substrate
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    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
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    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD

Abstract

A film forming method includes a step of forming an oxide film on a surface of a silicon substrate; a step of etching the oxide film and forming an interface oxide film by using the oxide film so that the thickness of the interface oxide film measured by an XPS method is 6.7AA or less but not less than 6.0AA; and a step of forming an HfO2 film on the interface oxide film by an MOCVD method in oxidation atmosphere.

Description

The manufacture method of film build method and semiconductor device
Technical field
The present invention relates to general film build method, the film build method of the particularly so-called high dielectric film that is called as the high-K film and use the manufacture method of the semiconductor device of high-K film.
Background technology
Along with the granular development of technology, make present stage grid length be below the 60nm superfineization, ultrahigh speed semiconductor device create possibility.
In this superfineization, ultrahigh speed semiconductor device, along with dwindling of grid length, the thickness of grid oxidation film also is necessary to follow scaling rule and reduces, but for example in grid length is semiconductor device below the 45nm, under the situation of using existing heat oxide film, also be necessary to set the thickness of grid oxidation film for 1nm or below it.But, in this extremely thin gate insulating film, can cause that channel current increases, the problem that its result causes grid leakage current to increase inevitably.
For this situation, propose to have following proposal in the prior art: use as Ta for gate insulating film 2O 5, Al 2O 3, ZrO 2, HfO 2, ZrSiO 4Perhaps HfSiO 4Such high dielectric (so-called high-K dielectric) material, the relative dielectric constant of these high dielectric materials is bigger than heat oxide film, even if therefore actual thickness is bigger, SiO 2Conversion thickness (EOT) is also less.By using this high dielectric material, be the gate insulating film of several nm even if in grid length is ultrahigh speed semiconductor device so very short below the 45nm, also can use the physics thickness, can suppress the grid leakage current that produces because of the raceway groove effect.Generally speaking, this high dielectric material is many crystalline textures under the situation that is formed at the silicon substrate surface.
When directly forming under the situation of high dielectric film on the silicon substrate surface, Si atom and metallic atom are easy to take place large-scale counterdiffusion mutually between silicon substrate and high dielectric film, therefore, high dielectric film generally all can be formed on the silicon substrate surface by extremely thin interface oxidation film.
For this gate insulating film that on the interface oxidation film, is formed with the structure of high dielectric film, the preferred oxide-film conversion thickness that reduces gate insulating film as much as possible, therefore, the preferred ratio that reduces the low interface oxidation film of relative dielectric constant in the gate insulating film as much as possible, thus thickness is reduced.
Patent documentation: TOHKEMY 2001-85422 communique
Non-patent literature 1:
De?Witte，H.et?al.，J.Electrochem.Soc.150(9)F169-F172(2003)
Non-patent literature 2:
Barnett，J.et?al.，Semiconductor?International，February?1，2006
Summary of the invention
One aspect of the present invention provides a kind of film build method, it is characterized in that, comprising: the operation that forms oxide-film on the silicon substrate surface; Described oxide-film is carried out etching, utilize described oxide-film to form the interface oxidation film, the feasible thickness of the described interface oxidation film of XPS method mensuration that utilizes is
Figure BPA00001232273800021
Below Above operation; With utilize mocvd method, in oxidizing atmosphere, on described interface oxidation film, form HfO 2The operation of film.
Another aspect of the present invention provides a kind of manufacture method of semiconductor device, it is characterized in that, comprising: the operation that forms oxide-film on the silicon substrate surface; Described oxide-film is carried out etching, utilize described oxide-film to form the interface oxidation film, the feasible thickness of the described interface oxidation film of XPS method mensuration that utilizes is
Figure BPA00001232273800023
Below Above operation; Utilize mocvd method, in oxidizing atmosphere, on described interface oxidation film, form HfO 2The operation of film; At HfO 2Form the operation of silicon fiml or metal film on the film; With described silicon fiml or metal film patternization, form the operation of gate electrode pattern; With with described gate electrode pattern as mask, in described silicon substrate, import impurity element, form the operation of source electrode and drain region.
The invention effect
According to the present invention, carry out etching by thickness to the interface oxidation film that forms on the silicon substrate, thickness setting is existed Below
Figure BPA00001232273800026
More than, can be to the HfO on it 2The film forming of film impacts, and can make stacked described interface oxidation film and HfO 2The oxide-film conversion thickness of the stacked film of film minimizes, and can reduce the leakage current of described stacked film.
Description of drawings
Figure 1A be the explanation first execution mode of the present invention figure (one of).
Figure 1B is the figure (two) of explanation first execution mode of the present invention.
Fig. 1 C is the figure (three) of explanation first execution mode of the present invention.
Fig. 1 D is the figure (four) of explanation first execution mode of the present invention.
Fig. 2 is the figure of the structure of employed MOCVD device in the expression execution mode.
Fig. 3 be expression in first execution mode EOT and the thickness and the HfO of interface oxidation film 2The figure of the relation between the thickness of film.
Fig. 4 is the figure that the structure that obtains by first execution mode is described.
Fig. 5 be expression in first execution mode leakage current and the figure of the relation between the EOT.
Fig. 6 A be the summary of the membrane formation mechanism of expression in first execution mode figure (one of).
Fig. 6 B is the figure (two) of the summary of the membrane formation mechanism of expression in first execution mode.
Fig. 6 C is the figure (three) of the summary of the membrane formation mechanism of expression in first execution mode.
Fig. 7 A be the expression prior art membrane formation mechanism summary figure (one of).
Fig. 7 B is the figure (two) of summary of the membrane formation mechanism of expression prior art.
Fig. 8 A be the summary of the film build method of expression in first execution mode figure (one of).
Fig. 8 B is the figure (two) of the summary of the film build method of expression in first execution mode.
Fig. 8 C is the figure (three) of the summary of the film build method of expression in first execution mode.
Fig. 9 A be the manufacture method of the related semiconductor-fabricating device of expression second execution mode figure (one of).
Fig. 9 B is the figure (two) of the manufacture method of the related semiconductor-fabricating device of expression second execution mode.
Fig. 9 C is the figure (three) of the manufacture method of the related semiconductor-fabricating device of expression second execution mode.
Fig. 9 D is the figure (four) of the manufacture method of the related semiconductor-fabricating device of expression second execution mode.
Embodiment
(first execution mode)
At first, as first execution mode of the present invention, the film forming experiment that becomes basis of the present invention is described.
In the present embodiment, at first shown in Figure 1A, on the surface of the silicon substrate 11 of (100) orientation, in oxygen atmosphere, for example forming by 1000 ℃ heat treatments, thickness is
Figure BPA00001232273800031
Heat oxide film 12, shown in the arrow of Figure 1B, so that described silicon substrate 11 is begun to enter mode the described HF etchant 13A from the one lateral edge portion, to be immersed among the Hf etchant 13A that remains in the container 13 with certain control rate as the above-mentioned silicon substrate 11 that is formed with heat oxide film 12, then, rapidly it is mentioned at faster speed, thus, shown in Fig. 1 C, the thickness t1 that makes described heat oxide film 12 changes continuously from a side direction opposite side of described silicon substrate 11.In the example shown in Fig. 1 C, described heat oxide film 12 is in the regional 11B of described substrate 11, and described thickness t1 measures by the XPS method to have
Figure BPA00001232273800041
Above thickness is in 1 deficiency of thickness t described in the regional 11A
Figure BPA00001232273800042
Perhaps heat oxide film 12 disappears.For this
Figure BPA00001232273800043
The critical meaning of thickness t1, be elaborated in the back.
Further, in the operation of Fig. 1 D, on the structure of above-mentioned Fig. 1 C, utilize mocvd method formation thickness to be
Figure BPA00001232273800044
HfO 2Film 14.Described HfO 2The heat oxide film 12 of film 14 below it forms stacked film 16.But, as described later, in the structure of Fig. 1 D, the etch processes of the surface state of described heat oxide film 12 by Fig. 1 C changes from the surface state of initial heat oxide film 12, therefore, in the following description, the heat oxide film 12 that constitutes described stacked film 16 is called " interface oxidation film ".
Fig. 2 is in the expression present embodiment, to described HFO 2The structure of the film formation device MOCVD device 60 that film 14 uses when carrying out film forming.
With reference to Fig. 2, described MOCVD device 60 has the container handling 62 that carries out exhaust by pump 61, is provided with the maintenance platform 62A that keeps processed substrate W in described container handling 62.
In addition, in described container handling 62, be provided with spray head 62S, on described spray head 62S, be connected the pipeline 62a that supplies with oxygen with valve V1 via not shown MFC (mass flow controller) in mode in the face of described processed substrate W.
Described MOCVD device 60 has (HTB) the container 63B of raw material such as organo-metallic compound such as grade of maintenance tert-butyl group hafnium (タ one シ ヤ リ Block チ Le Ha Off ニ ウ system), the body of bleeding of the organo-metallic compound prepared using He gas among the described container 63B etc. is supplied to gasifier 62e via gas flow controller 62d, via valve V3 vaporized organo-metallic compound unstrpped gas is supplied to spray head 62S in the assistance of described gasifier 62e by vector gas such as Ar.
In described spray head 62S, described oxygen, the HTB gas path by separately, formed peristome 62s is released to the processing space in the described container handling 62 on the surface of facing with described silicon substrate W from described spray head 62S.
In the present embodiment, the silicon substrate 21 of the state of described Fig. 1 C is imported in the described container handling 62, it is remained on the described substrate holder 62A as processed substrate W, for example the interior pressure with described container handling 62 is set in 0.3Torr, substrate temperature is set in 480 ℃, from the flow importing oxygen of described spray head 62S with 100sccm, use the flow of controller 62d promptly to import HTB with described fluid stream in addition with the value that 45mg/ divides, thus, being formed uniformly thickness on the part is formed with the silicon substrate 11 of described heat oxide film 12 is
Figure BPA00001232273800051
HfO 2Film.
On the other hand, the formation of the heat oxide film 12 in the operation of described Figure 1A is to use known annealing device to carry out.Therefore, omit the explanation of annealing device.
What Fig. 3 represented is: at shown in Fig. 1 D, on thickness continually varying interface oxidation film 12, utilize mocvd method to be formed with HfO with roughly certain thickness 2The silicon substrate 11 of film 14 is obtained the thickness and the HfO of described interface oxidation film 12 by the XPS method 2The thickness of film is further at described interface oxidation film 12 and HfO 2The stepped construction of film 14 utilizes online electrical measurement method to obtain the result of EOT.This online electrical measurement method is by combined electrical corona biasing (コ ロ Na バ イ ア ス) technology, vibration Kelvin probe (Kelvin Probe, ケ Le PVC Application プ ロ one Block) technology and light-pulse generator technology utilize the Quantox device of KLA-Tencor society to try to achieve.About the concrete condition of measuring, with reference to non-patent literature 1.The XPS thickness and the HfO of described EOT, interface oxidation film 12 2The XPS thickness of film 14 is all with dust
Figure BPA00001232273800052
Unit representation.
In Fig. 3, the relation of the EOT of the described interface oxidation film 12 that " REF " tries to achieve with the sample of the state of representing relative Fig. 1 C and the thickness of XPS is represented reference standard.Because described " REF " expression, is represented with straight line so EOT and XPS thickness are one to one at the relation of the EOT and the XPS thickness of same interface oxidation film 12.Herein, EOT represents according to the electric thickness of obtaining of the equivalent circuit of capacitor, with respect to this, and the interface oxidation film 12 or the HfO that utilize the XPS method to try to achieve 2The Si atom that is in the film to be contained of the thickness of film 14 reaction or the quantity of Hf atom.
With reference to Fig. 3 as can be known, the XPS thickness t1 of described interface oxidation film 12 from
Figure BPA00001232273800053
Extremely
Figure BPA00001232273800054
Scope
Figure BPA00001232273800055
" area I " in, the EOT of described stacked film 16 reduces with described straight line REF almost parallel ground along with the minimizing of the XPS thickness t1 of described interface oxidation film 12.In described area I, because described HfO 2The XPS thickness t2 almost fixed of film 14 is in
Figure BPA00001232273800056
Extremely
Figure BPA00001232273800057
Scope, produce so the minimizing of the EOT of the stacked film of observing in described " area I " 16 is considered to the minimizing of the physics thickness of corresponding described interface oxidation film 12.
With respect to this, as can be seen, t1 is at the XPS of described interface oxidation film 12 thickness Below and Above " area I I "
Figure BPA000012322738000510
In, for the EOT of described stacked film 16, if the XPS thickness of described heat oxide film 12 reduces, then described straight line " REF " reduces more rapidly, and t1 reaches when the XPS of interface oxidation film 12 thickness The time, the EOT of described stacked film 16 is minimum.
On the other hand, as can be seen, the thickness t1 of XPS of described interface oxidation film 12 be
Figure BPA00001232273800062
Among the following area I II, described thickness t1 roughly exists
Figure BPA00001232273800063
Do not change, the EOT of stacked film 16 is from approximately
Figure BPA00001232273800064
Sharply increase to
Figure BPA00001232273800065
In addition, it can also be seen that, in described area I II, HfO 2The thickness t2 of film 14 also reduces what to some extent.
The area I of described Fig. 3 and II are observed among the regional 11B on the substrate shown in Fig. 1 C, the 1D 11, and with respect to this, described area I II is observed among the regional 11A in described Fig. 1 C, Fig. 1 D, can be interpreted as being illustrated in described silicon substrate 11 and HfO 2The interface of film 14 utilizes HfO 2Employed oxygen during the film forming of film 14 forms the oxide-film 12A that relative dielectric constant is little or the physics thickness is big that sees as shown in Figure 4.At this moment, can be interpreted as, because the XPS thickness t1 of described oxide-film 12A does not increase, promptly the atomicity of Si atom does not increase, so described oxide-film 12A is different with the interface oxidation film 12 that is formed at described regional 11B, forms multiple aperture plasma membrane.In addition, in Fig. 3, at the HfO of area I II generation 2The thickness of film 14 reduces the oxide-film 12A that can be interpreted as because of becoming substrate and becomes multiple aperture plasma membrane, and membranous deterioration is so the accumulation of Hf atom is difficult to generate HfO 2Forming (incubation) time during film forming of film 14 increases.
Fig. 5 represents is relation that obtain at the structure of described Fig. 4, EOT and leakage current Jg.Yet in Fig. 5, leakage current utilizes the Quantox device of previously described KLT-Tencor society to measure, and utilizes and uses the leakage current index (Jgindex) of proof voltage (V) to show.The value of described leakage current index is corresponding with the logarithmic curve (log plot) of leakage current Jg, and it is big more to be worth more little leakage current, is worth greatly more, and leakage current is more little.
With reference to Fig. 5 as can be seen, for the sample corresponding with the area I of Fig. 3, leakage current Jg that flows in the described stacked film 16 and EOT together, with dual circle expression, on common heat oxide film, form HfO without etching 2The first comparative control sample (THOx/HfO of film 2) situation roughly the same, promptly with identical slope variation, with respect to this, in area I I, leakage current Jg with represent with ■ in the drawings, on the oxide-film that utilizes ultraviolet excitation oxygen radical to form, be formed with HfO without etching 2The second comparative control test portion (UVO of film 2/ HfO 2) situation change roughly the samely.
And, shown in Figure 5, in the area I II of the described Fig. 3 that represents with III, corresponding EOT with described Fig. 3 increases, the value of leakage current Jg becomes also greatly that (value of leakage current index is 09～0.6V), and the interface oxidation film 12A of formation is made of the oxide-film of the membranous deterioration of porous matter.
In addition, in the curve of described Fig. 3, though think that the critical meaning of confirming described area I of differentiation and area I I is relatively more difficult, but in the curve of the leakage current of Fig. 5, if described area I and area I I are compared, the critical meaning of then clear and definite I of distinguishable region as can be known and area I I exists.In addition, also can confirm critical meaning between area I I and the area I II.
Particularly if with in Fig. 5, represent with ■, utilize ultraviolet excitation oxygen radical to form the interface oxidation film, and do not carry out etching thereon and be formed with HfO 2The described second comparative control structure of film is compared, then as can be seen in the present invention, in same EOT, among the figure with the value of the leakage current Jg that represents as the straight line of " A: area I I of the present invention ", with in figure with as " B:UVO 2/ HfO 2" the described second comparative control structure represented of straight line in the value of leakage current Jg compare, particularly the value of EOT is approximately
Figure BPA00001232273800071
Become littler in the above scope, leakage current characteristic is improved.
Fig. 6 A～6C is the figure of the mechanism that illustrates that in the present embodiment leakage current characteristic like this is improved.
With reference to Fig. 6 A～6C, in the present embodiment as shown in Figure 6A, the heat oxide film 12 that forms in the operation of Figure 1A in film forming constantly, the Si atom on surface in fact all becomes SOT state of termination because of oxygen atom, but utilizes the etching work procedure of Figure 1B, and the part that it is surperficial is removed, its result, in the state of Fig. 6 B,, form the outstanding key (dangling bond) of most Si atoms on the surface of described interface oxidation film 12.
Therefore, in the operation of described Fig. 6 C, if on described interface oxidation film 12, utilize mocvd method to pile up HfO 2Film 14 is then at HfO 2The film forming initial stage of film 14 on the surface of described interface oxidation film 12 with high density generation nucleation, the HfO of formation 2The flatness on the film density of film 14 and film surface is improved.The raising of observed leakage current characteristic in Fig. 5 can be thought by this HfO 2The film density of film 14 and the raising of flatness are caused.In addition, follow in this, formation time also reduces in the present embodiment, and film forming efficiency is improved.
Relative therewith, shown in Fig. 7 A, become at the outstanding key on surface on the heat oxide film 12 of terminal and utilize mocvd method directly to form HfO 2Under the situation of film, there is following problems: HfO shown in Fig. 7 B 2The nucleation density at the film forming initial stage of film 14 is low, and formation time is elongated, the HfO of formation 2The membranous deterioration of film, perhaps the flatness on film surface worsens.Therefore, in the film build method of Fig. 7 A, 7B, can not obtain good leakage current characteristic as the present embodiment.
Fig. 8 A～8C is the figure of expression according to the summary of the film build method of the present embodiment of above-mentioned opinion.
With reference to Fig. 8 A, on (100) face of silicon substrate 21 of (100) orientation, for example in oxygen atmosphere, utilize 1000 ℃ heat treatment to form heat oxide film 22, in the operation of Fig. 8 B, in the etching of using HF or BHF, described heat oxide film 22 is carried out Wet-type etching, its thickness t1 is reduced to
Figure BPA00001232273800081
More than and Following scope forms interface oxidation film 22A.Such a Wet-type etching can be implemented by the temperature and the etching period of control etching solution.For example be at formation thickness
Figure BPA00001232273800083
Under the situation of the described heat oxide film 22 of thickness,, carry out 60 seconds etching, and described thickness t1 can be controlled in the prescribed limit by using 24 ℃ HF etching solution.
Perhaps, the etching work procedure of described Fig. 8 B also can be undertaken by dry-etching.
Perhaps, the etching work procedure of Fig. 8 B also can be undertaken by chemical dry-type etch.For example, utilize the MOCVD device 60 of described Fig. 2, the described silicon substrate that will be formed with described heat oxide film 22 remains on the described substrate holder 62A in the container handling 62 as processed substrate W.The pressure of described container handling is set in 1～2Torr, substrate temperature is set in 150～200 ℃, in described container handling 62, import HF gas and NH via described spray head 62S respectively from pipeline 62f and 62g 3Gas.Utilize this method, can form undamaged interface oxidation film 22A with the thickness chemical etching of described heat oxide film 22 to described prescribed limit.The thickness of described heat oxide film 22 is reduced in described prescribed limit, form interface oxidation film 22A.
And, the structure of Fig. 8 B is imported in the container handling 62 of MOCVD device 60 of described Fig. 2, remain on the described substrate holder 62A as processed substrate W, for example the interior pressure with described container handling 62 is set in 0.3Torr, substrate temperature is set in 480 ℃, imports oxygen with the flow of 100sccm, and promptly import HTB with the flow among the controller 62d with the value that 45mg/ divides with described fluid stream from described spray head 62S, thus, on described interface oxidation film 12A for example with
Figure BPA00001232273800084
Thickness be made like HfO 2Film 23.
The described interface oxidation film 22A and the HfO of Xing Chenging like this 2The stacked film 24 of film 23, as before illustrated in fig. 3, EOT becomes minimum, and as illustrated in fig. 5, demonstrates good leakage current characteristic.
(second execution mode)
Fig. 9 A～9D represents to use as gate insulating film the manufacturing process of semiconductor device of the stacked film 24 of described Fig. 8 A.
With reference to Fig. 9 A, on (100) surface of the silicon substrate 41 with (100) orientation, utilize element separated region 41I to mark off element area 41A, and, utilize the operation of described Fig. 8 A～8C on the surface of described silicon substrate 41, form dielectric film 42 with described stacked film 24 identical formations.
And in the operation of Fig. 9 B, piling up on described dielectric film 42 has the silicon fiml 43 that is made of polysilicon or amorphous silicon, by described silicon fiml 43 is implemented patterning, forms gate electrode 43G in the operation of Fig. 9 C.In addition, in the operation of Fig. 8 C, described dielectric film 42G with described gate electrode 43G patterning, forms gate insulating film 42G on mask.
And, in the operation of Fig. 9 D, in described silicon substrate 41, as mask, be changed to n channel MOS transistor then ion injection P+, As+ or Sb+ as if described semiconductor device, in addition with described gate electrode 43G, if described semiconductor device is changed to then ion injection B+ of p channel MOS transistor, in the 41A of described key element zone, in described silicon substrate 41, first and second sides of described gate electrode, form source electrode and drain diffusion region 41S and 41D respectively.In addition, meanwhile, described gate electrode 43G is painted the conductivity type of regulation.
The semiconductor device that utilizes such operation to make, the film 42 that will have the identical layer stack structure with the stacked film 24 of described Fig. 8 D uses as gate insulating film 42G, therefore, EOT was little as before illustrated in fig. 3, and leakage current characteristic is good as Fig. 5 explanation, even if so grid length shorten to below the 32nm and also can move.
In addition, also can replace described silicon fiml 43 and use metal film or conductive metal nitride film, make semiconductor device with metal gates.
More than, preferred forms of the present invention is illustrated, but the present invention is not limited to described specific execution mode, in Ji Zai the aim, can carry out all distortion and change within the scope of the claims.
The present invention is that the Japanese Patent Application 2008-087446 that puts down on March 28th, 20 application with Japan is the basis of claim of priority, quotes its full content.

Claims (5)

1. a film build method is characterized in that, comprising:
Form the operation of oxide-film on the silicon substrate surface;
Described oxide-film is carried out etching, utilize described oxide-film to form the interface oxidation film, the feasible thickness of the described interface oxidation film of XPS method mensuration that utilizes is Below
Figure FPA00001232273700012
Above operation; With
Utilize mocvd method, in oxidizing atmosphere, on described interface oxidation film, form HfO 2The operation of film.
2. film build method as claimed in claim 1 is characterized in that:
The operation that forms oxide-film on the surface of described silicon substrate is for forming the operation of heat oxide film.
3. film build method as claimed in claim 2 is characterized in that:
Implement described etching work procedure, make the thickness of described interface oxidation film be
Figure FPA00001232273700013
4. film build method as claimed in claim 1 is characterized in that:
Form described HfO 2The operation of film is implemented as raw material with tert-butyl group hafnium.
5. the manufacture method of a semiconductor device is characterized in that, comprising:
Form the operation of oxide-film on the silicon substrate surface;
Described oxide-film is carried out etching, utilize described oxide-film to form the interface oxidation film, the feasible thickness of the described interface oxidation film of XPS method mensuration that utilizes is
Figure FPA00001232273700014
Below
Figure FPA00001232273700015
Above operation;
Utilize mocvd method, in oxidizing atmosphere, on described interface oxidation film, form HfO 2The operation of film;
At described HfO 2Form the operation of silicon fiml or metal film on the film;
Make described silicon fiml or metal film patternization, form the operation of gate electrode pattern; With
As mask, in described silicon substrate, import impurity element with described gate electrode pattern, form the operation of source region and drain region.
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