CN101980134B - 一种实现智能三维桌面的装置及方法 - Google Patents
一种实现智能三维桌面的装置及方法 Download PDFInfo
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- CN101980134B CN101980134B CN2010105320648A CN201010532064A CN101980134B CN 101980134 B CN101980134 B CN 101980134B CN 2010105320648 A CN2010105320648 A CN 2010105320648A CN 201010532064 A CN201010532064 A CN 201010532064A CN 101980134 B CN101980134 B CN 101980134B
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
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- G—PHYSICS
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- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/048—Interaction techniques based on graphical user interfaces [GUI]
- G06F3/0481—Interaction techniques based on graphical user interfaces [GUI] based on specific properties of the displayed interaction object or a metaphor-based environment, e.g. interaction with desktop elements like windows or icons, or assisted by a cursor's changing behaviour or appearance
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66659—Lateral single gate silicon transistors with asymmetry in the channel direction, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7848—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being located in the source/drain region, e.g. SiGe source and drain
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
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- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
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Abstract
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CN2010105320648A CN101980134B (zh) | 2010-10-29 | 2010-10-29 | 一种实现智能三维桌面的装置及方法 |
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CN2010105320648A CN101980134B (zh) | 2010-10-29 | 2010-10-29 | 一种实现智能三维桌面的装置及方法 |
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CN101980134A CN101980134A (zh) | 2011-02-23 |
CN101980134B true CN101980134B (zh) | 2013-09-25 |
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Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9069440B2 (en) * | 2012-06-05 | 2015-06-30 | Apple Inc. | Method, system and apparatus for providing a three-dimensional transition animation for a map view change |
CN103514626B (zh) * | 2012-06-20 | 2016-04-20 | 厦门高德软件有限公司 | 一种显示天气信息的方法及其装置和移动终端 |
CN103809970B (zh) * | 2014-01-26 | 2016-11-23 | 广州恒业软件科技有限公司 | 一种实现桌面3d动态主题的方法及系统 |
CN105224164A (zh) * | 2014-07-25 | 2016-01-06 | 钱晓松 | 一种新的移动终端的动态显示桌面 |
CN105278900A (zh) * | 2014-07-25 | 2016-01-27 | 钱晓松 | 一种新的移动终端的动态显示方法 |
US9613270B2 (en) | 2014-08-12 | 2017-04-04 | Xiaomi Inc. | Weather displaying method and device |
CN104183004A (zh) * | 2014-08-12 | 2014-12-03 | 小米科技有限责任公司 | 天气显示方法及装置 |
CN106325655B (zh) * | 2015-06-19 | 2020-04-03 | 深圳超多维科技有限公司 | 应用于触摸终端的3d应用图标交互方法及触摸终端 |
CN108170499B (zh) * | 2017-11-17 | 2021-06-15 | 深圳依偎控股有限公司 | 3d应用图标的显示方法、装置及电子设备 |
CN112256367A (zh) * | 2020-10-19 | 2021-01-22 | 北京字节跳动网络技术有限公司 | 图形用户界面的显示方法、装置、终端和存储介质 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1755710A (zh) * | 2004-09-27 | 2006-04-05 | 英业达股份有限公司 | 手持设备及其显示器显示方法 |
CN201210054Y (zh) * | 2008-04-27 | 2009-03-18 | 惠州市德赛工业发展有限公司 | 一种多功能gps导航装置 |
CN101582009A (zh) * | 2008-05-15 | 2009-11-18 | 索尼株式会社 | 基于设备位置和/或日期/时间来动态地改变用户界面 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US8549439B2 (en) * | 2007-10-05 | 2013-10-01 | Autodesk, Inc. | Viewport overlays to expose alternate data representations |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1755710A (zh) * | 2004-09-27 | 2006-04-05 | 英业达股份有限公司 | 手持设备及其显示器显示方法 |
CN201210054Y (zh) * | 2008-04-27 | 2009-03-18 | 惠州市德赛工业发展有限公司 | 一种多功能gps导航装置 |
CN101582009A (zh) * | 2008-05-15 | 2009-11-18 | 索尼株式会社 | 基于设备位置和/或日期/时间来动态地改变用户界面 |
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