CN101976800A - ZnO和GaN组合ZnO基端面发射激光器及其制备方法 - Google Patents
ZnO和GaN组合ZnO基端面发射激光器及其制备方法 Download PDFInfo
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- CN101976800A CN101976800A CN 201010500171 CN201010500171A CN101976800A CN 101976800 A CN101976800 A CN 101976800A CN 201010500171 CN201010500171 CN 201010500171 CN 201010500171 A CN201010500171 A CN 201010500171A CN 101976800 A CN101976800 A CN 101976800A
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Abstract
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN2010105001712A CN101976800B (zh) | 2010-10-09 | 2010-10-09 | ZnO和GaN组合ZnO基端面发射激光器及其制备方法 |
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CN2010105001712A CN101976800B (zh) | 2010-10-09 | 2010-10-09 | ZnO和GaN组合ZnO基端面发射激光器及其制备方法 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
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CN 201110173437 Division CN102263369B (zh) | 2010-10-09 | 2010-10-09 | p-ZnO和n-GaN组合的ZnO基端发射激光器及制备方法 |
CN 201110173444 Division CN102263370B (zh) | 2010-10-09 | 2010-10-09 | p-ZnO和n-GaN组合的多层端发射激光器及制备方法 |
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CN101976800A true CN101976800A (zh) | 2011-02-16 |
CN101976800B CN101976800B (zh) | 2012-02-08 |
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CN2010105001712A Expired - Fee Related CN101976800B (zh) | 2010-10-09 | 2010-10-09 | ZnO和GaN组合ZnO基端面发射激光器及其制备方法 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105762243A (zh) * | 2016-03-31 | 2016-07-13 | 浙江大学 | 一种p-GaN/ZnO基多量子阱/n-ZnO结构的发光二极管及激光器及其制备方法 |
CN105908256A (zh) * | 2016-03-30 | 2016-08-31 | 南京大学 | 一种用于高效可见光催化水分解的锌镉氧合金单晶薄膜及其制备 |
CN106086795B (zh) * | 2016-05-31 | 2019-02-01 | 南京信息工程大学 | 一种氧化锌/氮化镓复合薄膜制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6355945B1 (en) * | 1998-07-06 | 2002-03-12 | Murata Manufacturing Co., Ltd. | Semiconductor optical device and optoelectronic integrated circuit device including a ZnO buffer layer |
JP2002305324A (ja) * | 2002-02-04 | 2002-10-18 | Murata Mfg Co Ltd | 半導体発光素子の製造方法 |
JP2007123731A (ja) * | 2005-10-31 | 2007-05-17 | Toshiba Corp | 半導体発光素子および半導体発光装置 |
CN100356642C (zh) * | 2005-01-28 | 2007-12-19 | 浙江大学 | 一种c-MgxZn1-xO/MgO多量子阱异质结构材料及其制备工艺 |
-
2010
- 2010-10-09 CN CN2010105001712A patent/CN101976800B/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6355945B1 (en) * | 1998-07-06 | 2002-03-12 | Murata Manufacturing Co., Ltd. | Semiconductor optical device and optoelectronic integrated circuit device including a ZnO buffer layer |
JP2002305324A (ja) * | 2002-02-04 | 2002-10-18 | Murata Mfg Co Ltd | 半導体発光素子の製造方法 |
CN100356642C (zh) * | 2005-01-28 | 2007-12-19 | 浙江大学 | 一种c-MgxZn1-xO/MgO多量子阱异质结构材料及其制备工艺 |
JP2007123731A (ja) * | 2005-10-31 | 2007-05-17 | Toshiba Corp | 半導体発光素子および半導体発光装置 |
Non-Patent Citations (1)
Title |
---|
《PROC. OF SPIE》 20090217 C.Bayram,et al Hybrid green LEDs based on n-ZnO/(InGaN/GaN)multi-quantum-wells/p-GaN 72170P-1-72170P-7 1-8 第7217卷, 2 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105908256A (zh) * | 2016-03-30 | 2016-08-31 | 南京大学 | 一种用于高效可见光催化水分解的锌镉氧合金单晶薄膜及其制备 |
CN105908256B (zh) * | 2016-03-30 | 2018-12-18 | 南京大学 | 一种用于高效可见光催化水分解的锌镉氧合金单晶薄膜及其制备 |
CN105762243A (zh) * | 2016-03-31 | 2016-07-13 | 浙江大学 | 一种p-GaN/ZnO基多量子阱/n-ZnO结构的发光二极管及激光器及其制备方法 |
CN106086795B (zh) * | 2016-05-31 | 2019-02-01 | 南京信息工程大学 | 一种氧化锌/氮化镓复合薄膜制备方法 |
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CN101976800B (zh) | 2012-02-08 |
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Address after: 243000 Anhui Province Economic and Technological Development Zone Ma'anshan City Baoqing Road No. 399 Building 1 Patentee after: Epitop Photoelectric Technology Co., Ltd. Address before: 243000 Anhui city of Ma'anshan Province Economic and Technological Development Zone Avenue West Road No. 259 floor 1- Patentee before: EpiTop Optoelectronic Co., Ltd. |
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