CN101969083B - Method for improving uniformity in diffusion film resistance chip of solar cell - Google Patents
Method for improving uniformity in diffusion film resistance chip of solar cell Download PDFInfo
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- CN101969083B CN101969083B CN2010101521718A CN201010152171A CN101969083B CN 101969083 B CN101969083 B CN 101969083B CN 2010101521718 A CN2010101521718 A CN 2010101521718A CN 201010152171 A CN201010152171 A CN 201010152171A CN 101969083 B CN101969083 B CN 101969083B
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Abstract
The invention relates to a method for improving uniformity in a diffusion film resistance chip of a solar cell, which comprises the following steps of: i, performing diffusion film resistance distribution test on a silicon chip diffused by a diffusion furnace tube; ii, obtaining diffusion film distribution test data according to the diffusion film resistance distribution test; and iii, adjusting the supporting leg height h or the clamping groove position of a quartz boat according to the diffusion film distribution test data of the silicon chip. The position of the silicon chip on the quartz boat is adjusted by adjusting the supporting leg height and the clamping groove position of the quartz boat so that the silicon chip is positioned at a heat balance point of the diffusion furnace tube, four sides of the silicon chip are heated uniformly, the uniformity in the diffusion film resistance chip of the solar cell is good, and the conversion efficiency of the solar cell is high.
Description
Technical field
The present invention relates to a kind of inhomogeneity method in the solar cell diffusion film resistor disc of improving.
Background technology
Solar cell is to utilize the photovoltaic effect principle to convert solar radiant energy to electric energy, and solar cell is the diode of a large-scale semiconductor PN junction in essence.Utilize the horizontal diffusion furnace pipe on silicon chip, to carry out the core technology that diffusion technique is the manufacturing solar cells PN junction.The height of its technical merit directly influences the solar cell photoelectric conversion efficiency.And the film resistor uniformity is to weigh the important indicator of horizontal diffusion furnace pipe diffusion effect in the monolithic sheet of silicon chip.Therefore, how improving film resistor uniformity in the sheet of silicon chip diffusion back, is the problem of insider's extensive concern.
In solar cell fabrication process, in horizontal Quartz stove tube, feed the process gas (diffuse source) in impure source, under hot conditions, silicon chip is spread.The high temperature of boiler tube is to be heated by the outer heater strip of boiler tube.Silicon chip is placed on the quartz boat, and quartz boat is placed in the boiler tube.Whether the position of quartz boat in boiler tube, it is even to have determined silicon chip to be heated.If the position of quartz boat is not a heat balance point theoretical in boiler tube, silicon chip is heated inhomogeneous, will cause the film resistor of silicon chip inhomogeneous.Silicon chip is the closer to the furnace wall, and heat absorption is abundant more, and its diffusion film resistance value can descend.On the contrary, diffusion film resistance can increase.
The deficiency that prior art exists is: the body of heater of horizontal diffusion furnace pipe is because the otherness of the processing technology of heater strip; After the time use was long, part stove silk lost efficacy, and made the heat balance in the boiler tube put difference to some extent; And if through buying or safeguard heating furnace body again, then cost is higher.Change also very loaded down with trivial details.
Summary of the invention
The technical problem that the present invention will solve is: the deficiency that overcomes prior art; A kind of inhomogeneity method in the solar cell diffusion film resistor disc of improving is provided; Silicon chip is heated in boiler tube evenly; Uniformity is better in the solar cell diffusion film resistor disc, and the conversion efficiency of solar cell is higher.
The technical solution adopted for the present invention to solve the technical problems is: a kind ofly improve inhomogeneity method in the solar cell diffusion film resistor disc; Described solar cell has silicon chip; Silicon chip is placed on the quartz boat through the draw-in groove in the quartz boat; The quartz boat that is placed with silicon chip is placed in the diffusion furnace tube, and diffusion furnace tube heating is spread silicon chip, describedly improves that inhomogeneity method comprises the following steps: in the solar cell diffusion film resistor disc
I, the silicon chip that will after the diffusion furnace tube diffusion, obtain carry out the test of diffusion film distribution of resistance;
Ii, according to diffusion film distribution of resistance test, obtain the diffusion film distribution tests data of silicon chip;
Iii, according to the diffusion film distribution tests data of silicon chip, regulate the feet height h of quartz boat or regulate the draw-in groove position of quartz boat.
Particularly, the diffusion film distribution tests data of described silicon chip are: the diffusion film resistance of the diffusion film resistance ratio silicon chip below test point of silicon chip top test point is high; The method of described adjusting quartz boat feet height is: increase the height h of quartz boat feet, the top that makes silicon chip on the quartz boat is more near the furnace wall of diffusion furnace tube.
Particularly, the diffusion film distribution tests data of described silicon chip are: the diffusion film resistance of the diffusion film resistance ratio silicon chip below test point of silicon chip top test point is low; The method of described adjusting quartz boat feet height is: reduce the height h of quartz boat feet, make the furnace wall of the top of silicon chip on the quartz boat further from diffusion furnace tube.
Particularly, the diffusion film distribution tests data of described silicon chip are: the diffusion film resistance of the diffusion film resistance ratio silicon chip left test point of the right-hand test point of silicon chip is high; The method of the draw-in groove position of described adjusting quartz boat is: move to silicon chip is right-hand the draw-in groove position of quartz boat, and the right side that makes silicon chip on the quartz boat is more near the furnace wall of diffusion furnace tube.
Particularly, the diffusion film distribution tests data of described silicon chip are: the diffusion film resistance of the diffusion film resistance ratio silicon chip left test point of the right-hand test point of silicon chip is low; The method of the draw-in groove position of described adjusting quartz boat is: move to the silicon chip left draw-in groove position of quartz boat, makes the furnace wall of the right side of silicon chip on the quartz boat further from diffusion furnace tube.
Particularly, described silicon chip can carry out repeatedly diffusion film distribution of resistance test, according to diffusion film distribution tests data repeatedly, carries out repeatedly regulating or the repeatedly adjusting of quartz boat draw-in groove position of quartz boat feet height h.
The method of processing quartz boat is again all adopted in the draw-in groove position of the feet height of described adjusting quartz boat or adjusting quartz boat.
The invention has the beneficial effects as follows: the present invention is through process the method for quartz boat again; Repeatedly regulate the draw-in groove position of the feet height and the quartz boat of quartz boat, regulate the position of silicon chip on the quartz boat, make silicon chip be positioned at the heat balance point place of diffusion furnace tube; The silicon chip upper and lower, left and right are heated evenly; Therefore, adopt method of the present invention, can improve uniformity in the solar cell diffusion film resistor disc; Uniformity is better in the diffusion film resistor disc of the solar cell of producing, thereby the conversion efficiency of its solar cell is higher.And without the integral replacing diffusion furnace tube, cost is safeguarded lower.
Description of drawings
Below in conjunction with accompanying drawing the present invention is further specified.
Fig. 1 is the structural representation of diffusion furnace tube among the present invention, quartz boat and silicon chip;
Fig. 2 is the sketch map that the present invention regulates the draw-in groove position of quartz boat;
Fig. 3 is the distribution schematic diagram of the solar cell diffusion film resistance of the embodiment that makes of prior art;
Fig. 4 is the distribution schematic diagram that adopts the solar cell diffusion film resistance of the embodiment that method of the present invention makes;
Wherein: 1. diffusion furnace tube, 2. quartz boat, 3. silicon chip.
Embodiment
As shown in Figure 1, solar cell has silicon chip 3, and silicon chip 3 is placed on the quartz boat 2 through the draw-in groove in the quartz boat 2, and the quartz boat 2 that is placed with silicon chip 3 is placed in the diffusion furnace tube 1, and diffusion furnace tube 1 heating is spread silicon chip 3.
Embodiments of the invention:
A kind ofly improve inhomogeneity method in the solar cell diffusion film resistor disc:
I, the silicon chip 3 that will after diffusion furnace tube 1 diffusion, obtain carry out the test of diffusion film distribution of resistance: on silicon chip 3, set test point; Silicon chip 3 lower lefts are test point a; Silicon chip 3 lower rights are test point b; Silicon chip 3 centers are test point c, and silicon chip 3 upper left sides are test point d, and silicon chip 3 upper right side are test point e;
Ii, test according to the diffusion film distribution of resistance; Obtain the diffusion film distribution tests data of silicon chip 3: as shown in Figure 3; The test point d of silicon chip 3 tops and the diffusion film resistance of test point e obviously the diffusion film resistance than test point a, test point b and test point c are high; Explain that silicon chip 3 top heat absorption are not enough, cause the diffusion film resistance of silicon chip 3 tops higher, uniformity is 4% in the film resistor sheet of silicon chip 3;
Iii, according to the diffusion film distribution tests data of above-mentioned silicon chip 3, process quartz boat 2 again, increase the feet height h of quartz boat 2, make silicon chip 3 tops more near the furnace wall of diffusion furnace tube 1, silicon chip 3 tops can absorb more heat.The distribution of regulating back solar cell diffusion film resistance is as shown in Figure 4, and the test point d of silicon chip 3 tops and the diffusion film resistance of test point e reduce, and uniformity is 1.65% in the film resistor sheet of silicon chip 3.
As shown in Figure 2, through regulating the draw-in groove position of quartz boat 2, make silicon chip 3 in diffusion furnace left or move right; As shown in Figure 3, the diffusion film resistance of silicon chip lower right test point b is lower, explains that silicon chip 3 right side heat absorption are more; Regulate the draw-in groove position of quartz boat and move, make the furnace wall of the right side of silicon chip on the quartz boat further from diffusion furnace tube 1 to silicon chip 3 lefts, as shown in Figure 4; The diffusion film resistance of test point b improves, and uniformity improves in the film resistor sheet of silicon chip 3.
In sum; Through the feet height h of adjusting quartz boat 2 and the draw-in groove position of quartz boat 2; Not only reduced cost, and effectively raised the uniformity that distributes in the solar battery thin film resistor disc, and then the photoelectric conversion efficiency of solar cell has been improved about 0.1%.
Claims (2)
1. one kind is improved inhomogeneity method in the solar cell diffusion film resistor disc; Described solar cell has silicon chip; Silicon chip is placed on the quartz boat through the draw-in groove in the quartz boat; The quartz boat that is placed with silicon chip is placed in the diffusion furnace tube, and diffusion furnace tube heating is spread silicon chip, it is characterized in that: describedly improve that inhomogeneity method comprises the following steps: in the solar cell diffusion film resistor disc
I, the silicon chip that will after the diffusion furnace tube diffusion, obtain carry out the test of diffusion film distribution of resistance;
Ii, according to diffusion film distribution of resistance test, obtain the diffusion film distribution tests data of silicon chip;
Iii, according to the diffusion film distribution tests data of silicon chip, regulate the feet height h of quartz boat or regulate the draw-in groove position of quartz boat;
The diffusion film distribution tests data of described silicon chip are: the diffusion film resistance of the diffusion film resistance ratio silicon chip below test point of silicon chip top test point is high; The method of described adjusting quartz boat feet height is: increase the height h of quartz boat feet, the top that makes silicon chip on the quartz boat is more near the furnace wall of diffusion furnace tube;
Perhaps, the diffusion film distribution tests data of described silicon chip are: the diffusion film resistance of the diffusion film resistance ratio silicon chip below test point of silicon chip top test point is low; The method of described adjusting quartz boat feet height is: reduce the height h of quartz boat feet, make the furnace wall of the top of silicon chip on the quartz boat further from diffusion furnace tube;
Perhaps, the diffusion film distribution tests data of described silicon chip are: the diffusion film resistance of the diffusion film resistance ratio silicon chip left test point of the right-hand test point of silicon chip is high; The method of the draw-in groove position of described adjusting quartz boat is: move to silicon chip is right-hand the draw-in groove position of quartz boat, and the right side that makes silicon chip on the quartz boat is more near the furnace wall of diffusion furnace tube;
Perhaps, the diffusion film distribution tests data of described silicon chip are: the diffusion film resistance of the diffusion film resistance ratio silicon chip left test point of the right-hand test point of silicon chip is low; The method of the draw-in groove position of described adjusting quartz boat is: move to the silicon chip left draw-in groove position of quartz boat, makes the furnace wall of the right side of silicon chip on the quartz boat further from diffusion furnace tube.
2. a kind of inhomogeneity method in the solar cell diffusion film resistor disc of improving according to claim 1; It is characterized in that: described silicon chip carries out repeatedly the test of diffusion film distribution of resistance; According to diffusion film distribution tests data repeatedly, carry out repeatedly regulating or the repeatedly adjusting of quartz boat draw-in groove position of quartz boat feet height h.
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| CN2010101521718A CN101969083B (en) | 2010-04-20 | 2010-04-20 | Method for improving uniformity in diffusion film resistance chip of solar cell |
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| CN2010101521718A CN101969083B (en) | 2010-04-20 | 2010-04-20 | Method for improving uniformity in diffusion film resistance chip of solar cell |
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| CN101969083B true CN101969083B (en) | 2012-07-25 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5330842A (en) * | 1992-03-17 | 1994-07-19 | David M. Volz | Surface treated vestibule block and process of making the same |
| CN101136325A (en) * | 2006-08-31 | 2008-03-05 | 上海航天汽车机电股份有限公司 | Semi-conductor silicon chip liquid stage source diffusion furnace |
| CN101494253A (en) * | 2009-02-26 | 2009-07-29 | 晶澳（扬州）太阳能科技有限公司 | Heavy diffusion and light diffusion technology for manufacturing selective emitter solar battery |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR20020006278A (en) * | 2000-07-12 | 2002-01-19 | 윤종용 | align test equipment of wafer |
| KR20060105200A (en) * | 2005-04-01 | 2006-10-11 | 삼성전자주식회사 | Apparatus for monitoring heater fail of diffusion furnace |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5330842A (en) * | 1992-03-17 | 1994-07-19 | David M. Volz | Surface treated vestibule block and process of making the same |
| CN101136325A (en) * | 2006-08-31 | 2008-03-05 | 上海航天汽车机电股份有限公司 | Semi-conductor silicon chip liquid stage source diffusion furnace |
| CN101494253A (en) * | 2009-02-26 | 2009-07-29 | 晶澳（扬州）太阳能科技有限公司 | Heavy diffusion and light diffusion technology for manufacturing selective emitter solar battery |
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Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: TRINA SOLAR Co.,Ltd. Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: trina solar Ltd. |
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Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: trina solar Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. |
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