CN101969058A - 一种平面led结构 - Google Patents
一种平面led结构 Download PDFInfo
- Publication number
- CN101969058A CN101969058A CN2010102564975A CN201010256497A CN101969058A CN 101969058 A CN101969058 A CN 101969058A CN 2010102564975 A CN2010102564975 A CN 2010102564975A CN 201010256497 A CN201010256497 A CN 201010256497A CN 101969058 A CN101969058 A CN 101969058A
- Authority
- CN
- China
- Prior art keywords
- led
- epitaxial loayer
- type epitaxial
- electrode
- bare chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 34
- 239000002184 metal Substances 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 230000005284 excitation Effects 0.000 claims abstract description 6
- 230000004888 barrier function Effects 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 241000218202 Coptis Species 0.000 claims description 4
- 235000002991 Coptis groenlandica Nutrition 0.000 claims description 4
- 229910000831 Steel Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000005030 aluminium foil Substances 0.000 claims description 4
- 230000000295 complement effect Effects 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 239000011889 copper foil Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010959 steel Substances 0.000 claims description 4
- 230000000694 effects Effects 0.000 abstract description 6
- 239000000843 powder Substances 0.000 abstract 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 6
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005566 electron beam evaporation Methods 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000002390 adhesive tape Substances 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 241001025261 Neoraja caerulea Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
Landscapes
- Led Device Packages (AREA)
Abstract
本发明公开了一种平面LED结构,包括金属基底和荧光罩,所述金属基底的上表面沿其周边固定有支撑层,所述荧光罩与所述支撑层相匹配并相互固定连接形成一空腔;在所述空腔内,含有一个以上LED裸芯片,每个所述LED裸芯片的底面与所述金属基底的上表面固定连接,所述金属基底的上表面固定有绝缘层,所述绝缘层上固定有金属层,所述金属层与各个所述LED裸芯片的电极之间电连接,所述荧光罩中的荧光粉的激发波长与所述LED裸芯片的发光波长相同。本发明散热效果好,即使某一个或几个LED裸芯片出现故障,也不影响整个平面LED发光,简化了平面LED的工艺、增加了平面LED的使用寿命、降低了平面LED的成本。
Description
技术领域
本发明涉及一种平面LED结构。
背景技术
工业上,目前产生光的途径之一是利用荧光粉覆盖蓝光LED形成单颗LED,蓝宝石、氮化铝等晶片被作为生长衬底生长LED。这种结构的LED的绝缘衬底的导热性能低,LED芯片热阻较大,且这种结构的LED的两个电极在外延层的同一侧,面临电流拥塞,电流分布不均匀,和不能充分利用发光层的问题。单颗LED发光效率不够高,不能较好地实现大面积发光。因此,大功率LED急需解决下述问题:(1)散热效率低;(2)发光效率和出光效率仍需提高;(3)成本高。这些问题取决于LED结构和LED的封装结构。
发明内容
本发明所要解决的技术问题是提供一种散热效果好的平面LED结构。
本发明解决其技术问题所采取的技术方案是:本发明所述平面LED结构包括金属基底和荧光罩,所述金属基底的上表面沿其周边固定有支撑层,所述荧光罩与所述支撑层相匹配并相互固定连接形成一空腔;在所述空腔内,含有一个以上LED裸芯片,每个所述LED裸芯片的底面与所述金属基底的上表面固定连接,所述金属基底的上表面固定有绝缘层,所述绝缘层上固定有金属层,所述金属层与各个所述LED裸芯片的电极之间电连接,所述荧光罩中的荧光粉的激发波长与所述LED裸芯片的发光波长相同。
进一步地,本发明所述LED裸芯片为垂直结构LED芯片。
进一步地,本发明所述LED裸芯片自下而上依次包括第一导电缓冲层、N型外延层电极、N型外延层、多量子阱层、P型外延层和P型外延层电极,所述P型外延层电极通过导线与所述金属层电连接。
进一步地,本发明所述LED裸芯片自下而上依次包括第二导电缓冲层、P型外延层电极、P型外延层、多量子阱层、N型外延层和N型外延层电极,所述N型外延层电极通过导线与所述金属层电连接。
进一步地,本发明所述导线为金线、铝线或铜线。
进一步地,本发明所述金属层为铝箔、铜箔或金箔。
与现有技术相比,本发明的有益效果是:采用金属基底既可作为电极也可由其大面积散热,解决了现有技术中绝缘衬底的导热性能低、LED芯片热阻较大、电极在外延层的同一侧导致电流拥塞分布不均匀、不能充分利用发光层的问题。本发明所采用的荧光罩可以是荧光玻璃、荧光环氧树脂等具有荧光性能的灯罩,一个以上的LED裸芯片相互之间形成并联电路,共同激发荧光罩中的荧光粉,这样即使某一个或几个LED裸芯片出现故障,也不影响整个平面LED发光,简化了平面LED的工艺、增加了平面LED的使用寿命、降低了平面LED的成本。
附图说明
图1是本发明实施例1的平面LED结构的示意图。
图2是图1的A-A向示意图。
图3是本发明实施例2的平面LED结构的示意图。
具体实施方式
如图1至图3所示,本发明的平面LED结构包括金属基底2和荧光罩3,金属基底2的上表面沿其周边固定有塑料板或其他有支撑强度的物体作为支撑层6,均匀涂抹荧光粉的荧光玻璃作为荧光罩3与支撑层6相匹配并相互固定连接形成一空腔。在该空腔内,含有一个以上LED裸芯片1。本发明的LED裸芯片1可为垂直结构LED芯片。
在图1和图2所示的实施例中,平面LED结构包括四个LED裸芯片1。如图2所示,LED裸芯片1为垂直结构LED芯片,自下而上依次包括第一导电缓冲层10、N型外延层电极11、N型外延层12、多量子阱层13、P型外延层14和P型外延层电极15,P型外延层电极15通过导线与所述金属层5电连接。
作为本发明的一种实施方式,可以以5μm的AlTiPtAu混合金属层作为第一导电缓冲层10,电子束蒸发或磁控溅射生长的100nm Ti/Au合金层作为N型外延层电极11,MOCVD、PLD、MBE或磁控溅射生长的300nmN型ZnO层作为N型外延层12,MOCVD、PLD、MBE或磁控溅射生长的10个周期的10nmZnMgO/ZnO层作为多量子阱层13,MOCVD、PLD、MBE或磁控溅射生长的300nmP型ZnO层作为P型外延层14以及以电子束蒸发或磁控溅射生长的100nmNi/Au合金层作为P型外延层电极15。
第一导电缓冲层10的作用是导电连接N型外延层电极11并是整个LED裸芯片1的支撑。N型外延层电极11是通过lift-off工艺形成的有特定图案的具有较好欧姆接触和较低比接触电阻率的LED的N极电极。P型外延层电极15是通过lift-off工艺形成的有特定图案的具有较好欧姆接触和较低比接触电阻率的LED的P极电极。可使用Al金属板或其他金属板或其他合金板作为金属基底2,金属基底2既可作为阴极接点与第一导电缓冲层10连接起导电作用也是散热片。金属基底2的上表面固定绝缘胶带或其他绝缘物质作为绝缘层4,绝缘层4上固定有铜箔或铝箔或金箔作为金属层5,绝缘层4的作用是绝缘分开金属基底2和金属层5。金属层5是作为阳极接点与P型外延层电极15连接,P型外延层电极15通过金线或铝线或铜线作为金属线7焊接在金属层5上。
本发明的荧光罩3中荧光粉的激发波长与LED裸芯片1的发光波长相同,支撑层6起到支撑作用且不与空腔内除了金属基底2和荧光罩3的任何其他部分相接触。金属层5与每个LED裸芯片1之间分别电连接,即金属层5连接在一起作为总的阳极接点,金属基底2作为阴极接点,外部对应正负极接入直流电源,使得各LED裸芯片1之间形成并联电路,这样可以提高发光效率,即使一个、两个或三个LED裸芯片1出现故障,也不影响整个平面LED发光。
在图3所示的另一种平面LED结构中,含有四个LED裸芯片1,这些LED裸芯片1为垂直结构LED芯片,自下而上依次包括第二导电缓冲层16、P型外延层电极15、P型外延层14、多量子阱层13、N型外延层12和N型外延层电极11,N型外延层电极11通过导线与金属层5电连接。
本发明可使用5μm的KrNiPtAu混合金属层作为第二导电缓冲层16,电子束蒸发或磁控溅射生长的100nm Ni/Au合金层作为P型外延层电极15,MOCVD、PLD、MBE或磁控溅射生长的300nmP型ZnO层作为P型外延层14,MOCVD、PLD、MBE或磁控溅射生长的10个周期的10nmZnMgO/ZnO层作为多量子阱层13,MOCVD、PLD、MBE或磁控溅射生长的300nmN型ZnO层作为N型外延层12,电子束蒸发或磁控溅射生长的100nmTi/Au合金层作为N型外延层电极11。
第二导电缓冲层16的作用是导电连接P型外延层电极15并是整个LED裸芯片1的支撑。N型外延层电极11是通过lift-off工艺形成的有特定图案的具有较好欧姆接触和较低比接触电阻率的LED的N极电极。P型外延层电极15是通过lift-off工艺形成的有特定图案的具有较好欧姆接触和较低比接触电阻率的LED的P极电极。Al金属板或其他金属板或其他合金板是金属基底2,既作为阳极接点与第二导电缓冲层16连接起导电作用也是散热片。金属基底2的上表面固定绝缘胶带或其他绝缘物质作为绝缘层4,绝缘层4上固定有铜箔或铝箔或金箔作为金属层5,绝缘层4的作用是绝缘分开金属基底2和金属层5。金属层5是作为阴极接点与N型外延层电极11连接,N型外延层电极11通过金线或铝线或铜线作为金属线7焊接在金属层5上。
如图3所示,金属基底2的上表面沿其周边固定有塑料板或其他有支撑强度的物体作为支撑层6,均匀涂抹荧光粉的荧光玻璃作为荧光罩3与支撑层6相匹配并相互固定连接形成一空腔,荧光罩3中荧光粉的激发波长与LED裸芯片1的发光波长相同,支撑层6起到支撑作用且不与空腔内除了金属基底2和荧光罩3的任何其他部分相接触。金属层5与每个LED裸芯片1之间分别电连接,即金属层5连接在一起作为总的阴极接点,金属基底2作为阳极接点,外部对应正负极接入直流电源,使得各LED裸芯片1之间形成并联电路,这样可以提高发光效率,即使一个、两个或三个LED裸芯片1出现故障,也不影响整个平面LED发光。
Claims (6)
1.一种平面LED结构,其特征在于:包括金属基底(2)和荧光罩(3),所述金属基底(2)的上表面沿其周边固定有支撑层(6),所述荧光罩(3)与所述支撑层(6)相匹配并相互固定连接形成一空腔;在所述空腔内,含有一个以上LED裸芯片(1),每个所述LED裸芯片(1)的底面与所述金属基底(2)的上表面固定连接,所述金属基底(2)的上表面固定有绝缘层(4),所述绝缘层(4)上固定有金属层(5),所述金属层(5)与各个所述LED裸芯片(1)的电极之间电连接,所述荧光罩(3)中的荧光粉的激发波长与所述LED裸芯片(1)的发光波长相同。
2.根据权利要求1所述的一种平面LED结构,其特征在于:所述LED裸芯片(1)为垂直结构LED芯片。
3.根据权利要求2所述的一种平面LED结构,其特征在于:所述LED裸芯片(1)自下而上依次包括第一导电缓冲层(10)、N型外延层电极(11)、N型外延层(12)、多量子阱层(13)、P型外延层(14)和P型外延层电极(15),所述P型外延层电极(15)通过导线与所述金属层(5)电连接。
4.根据权利要求2所述的一种平面LED结构,其特征在于:所述LED裸芯片(1)自下而上依次包括第二导电缓冲层(16)、P型外延层电极(15)、P型外延层(14)、多量子阱层(13)、N型外延层(12)和N型外延层电极(11),所述N型外延层电极(11)通过导线与所述金属层(5)电连接。
5.根据权利要求3或4所述的一种平面LED结构,其特征在于:所述导线为金线、铝线或铜线。
6.根据权利要求1所述一种平面LED结构,其特征在于:所述金属层(5)为铝箔、铜箔或金箔。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010102564975A CN101969058A (zh) | 2010-08-17 | 2010-08-17 | 一种平面led结构 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010102564975A CN101969058A (zh) | 2010-08-17 | 2010-08-17 | 一种平面led结构 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN101969058A true CN101969058A (zh) | 2011-02-09 |
Family
ID=43548185
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010102564975A Pending CN101969058A (zh) | 2010-08-17 | 2010-08-17 | 一种平面led结构 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN101969058A (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103654730A (zh) * | 2013-12-19 | 2014-03-26 | 北京大学 | 一种基于led光源的荧光分子成像系统及其成像方法 |
CN111969091A (zh) * | 2020-10-26 | 2020-11-20 | 季华实验室 | 图形镂空夹层的高密度小间距led模组、显示器及方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1925178A (zh) * | 2006-09-26 | 2007-03-07 | 浙江大学 | 一种ZnO基量子点发光二极管 |
CN101779300A (zh) * | 2007-07-11 | 2010-07-14 | 希爱化成株式会社 | 发光装置 |
CN201749849U (zh) * | 2010-08-17 | 2011-02-16 | 浙江大学 | 一种平面led结构 |
-
2010
- 2010-08-17 CN CN2010102564975A patent/CN101969058A/zh active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1925178A (zh) * | 2006-09-26 | 2007-03-07 | 浙江大学 | 一种ZnO基量子点发光二极管 |
CN101779300A (zh) * | 2007-07-11 | 2010-07-14 | 希爱化成株式会社 | 发光装置 |
CN201749849U (zh) * | 2010-08-17 | 2011-02-16 | 浙江大学 | 一种平面led结构 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103654730A (zh) * | 2013-12-19 | 2014-03-26 | 北京大学 | 一种基于led光源的荧光分子成像系统及其成像方法 |
CN111969091A (zh) * | 2020-10-26 | 2020-11-20 | 季华实验室 | 图形镂空夹层的高密度小间距led模组、显示器及方法 |
CN111969091B (zh) * | 2020-10-26 | 2021-01-29 | 季华实验室 | 图形镂空夹层的高密度小间距led模组、显示器及方法 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8299477B2 (en) | Light emitting device and method for fabricating the same | |
CN102683534A (zh) | 垂直式交流发光二极管器件及其制作方法 | |
CN103066195A (zh) | 应用石墨烯作为导热层的倒装结构发光二极管 | |
CN102201426A (zh) | 发光二极管及其制作方法 | |
US20120049204A1 (en) | Led module | |
KR101253247B1 (ko) | 광 디바이스용 기판 | |
CN106299072A (zh) | 发光二极管芯片 | |
TW201336063A (zh) | 發光二極體元件 | |
CN101969058A (zh) | 一种平面led结构 | |
CN201749849U (zh) | 一种平面led结构 | |
US8823043B2 (en) | Flip-chip light emitting diode | |
CN105633240B (zh) | 一种csp封装芯片结构及制作方法 | |
CN102074636B (zh) | 一种倒装芯片结构的发光二极管装置 | |
CN101226981A (zh) | 一种半导体发光器件及其制造方法 | |
CN202013885U (zh) | 电极上下设置的led集成封装器件 | |
CN202905774U (zh) | 光源模块用基板 | |
CN102237353A (zh) | 发光二极管封装结构及其制造方法 | |
CN201435407Y (zh) | 一种新型led封装用基板 | |
CN104733602A (zh) | 发光二极管之封装结构 | |
CN104979441A (zh) | 一种led芯片及其制作方法及led显示装置 | |
CN106299073A (zh) | 发光二极管晶圆及其形成方法 | |
CN105023932B (zh) | 一种结合led外延结构与led封装基板为一体的垂直式led阵列元件 | |
CN203859142U (zh) | 一种led芯片 | |
CN101593802A (zh) | 新型led封装用基板 | |
KR101609866B1 (ko) | 발광 다이오드 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20110209 |