CN101967637A - 二硫属化物硒油墨及其制备和使用方法 - Google Patents

二硫属化物硒油墨及其制备和使用方法 Download PDF

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Publication number
CN101967637A
CN101967637A CN2010102358183A CN201010235818A CN101967637A CN 101967637 A CN101967637 A CN 101967637A CN 2010102358183 A CN2010102358183 A CN 2010102358183A CN 201010235818 A CN201010235818 A CN 201010235818A CN 101967637 A CN101967637 A CN 101967637A
Authority
CN
China
Prior art keywords
selenium
group
substrate
ink
alkyl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2010102358183A
Other languages
English (en)
Chinese (zh)
Inventor
D·莫斯利
K·卡尔兹亚
C·斯兹曼达
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials International LLC
Original Assignee
Rohm and Haas Electronic Materials LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials LLC filed Critical Rohm and Haas Electronic Materials LLC
Publication of CN101967637A publication Critical patent/CN101967637A/zh
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/52—Electrically conductive inks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Inorganic Chemistry (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
  • Thin Film Transistor (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Photovoltaic Devices (AREA)
CN2010102358183A 2009-07-27 2010-07-14 二硫属化物硒油墨及其制备和使用方法 Pending CN101967637A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/509,847 2009-07-27
US12/509,847 US8308973B2 (en) 2009-07-27 2009-07-27 Dichalcogenide selenium ink and methods of making and using same

Publications (1)

Publication Number Publication Date
CN101967637A true CN101967637A (zh) 2011-02-09

Family

ID=43447156

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010102358183A Pending CN101967637A (zh) 2009-07-27 2010-07-14 二硫属化物硒油墨及其制备和使用方法

Country Status (6)

Country Link
US (2) US8308973B2 (enExample)
EP (1) EP2287115B1 (enExample)
JP (1) JP5666836B2 (enExample)
KR (1) KR101199033B1 (enExample)
CN (1) CN101967637A (enExample)
TW (1) TWI432533B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110137061A1 (en) * 2009-12-09 2011-06-09 Chi-Jie Wang Nanoink for forming absorber layer of thin film solar cell and method of producing the same
US8119506B2 (en) * 2010-05-18 2012-02-21 Rohm And Haas Electronic Materials Llc Group 6a/group 3a ink and methods of making and using same
US8709917B2 (en) * 2010-05-18 2014-04-29 Rohm And Haas Electronic Materials Llc Selenium/group 3A ink and methods of making and using same
WO2011146115A1 (en) 2010-05-21 2011-11-24 Heliovolt Corporation Liquid precursor for deposition of copper selenide and method of preparing the same
WO2012023973A2 (en) 2010-08-16 2012-02-23 Heliovolt Corporation Liquid precursor for deposition of indium selenide and method of preparing the same
WO2012037391A2 (en) * 2010-09-15 2012-03-22 Precursor Energetics, Inc. Annealing processes for photovoltaics
US8282995B2 (en) * 2010-09-30 2012-10-09 Rohm And Haas Electronic Materials Llc Selenium/group 1b/group 3a ink and methods of making and using same
US8343267B2 (en) * 2011-02-18 2013-01-01 Rohm And Haas Electronic Materials Llc Gallium formulated ink and methods of making and using same
US9105797B2 (en) * 2012-05-31 2015-08-11 Alliance For Sustainable Energy, Llc Liquid precursor inks for deposition of In—Se, Ga—Se and In—Ga—Se
US9842733B2 (en) * 2013-06-11 2017-12-12 Imec Vzw Method for dissolving chalcogen elements and metal chalcogenides in non-hazardous solvents
TWI527821B (zh) 2013-10-16 2016-04-01 國立中山大學 銀化合物、銀墨水及可撓式基板之噴印方法
JP6411499B2 (ja) * 2013-11-15 2018-10-24 ナノコ テクノロジーズ リミテッド 銅リッチな銅インジウム（ガリウム）ジセレニド／ジスルフィドの調製

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4520010A (en) * 1983-06-02 1985-05-28 Xerox Corporation Process for modifying the electrical properties of selenium, and selenium alloys
WO1993004212A1 (en) 1991-08-26 1993-03-04 Eastman Kodak Company Preparation of group iii element-group vi element compound films
AU2249201A (en) * 1999-11-16 2001-05-30 Midwest Research Institute A novel processing approach towards the formation of thin-film Cu(In,Ga)Se2
CN100490205C (zh) * 2003-07-10 2009-05-20 国际商业机器公司 淀积金属硫族化物膜的方法和制备场效应晶体管的方法
US6875661B2 (en) * 2003-07-10 2005-04-05 International Business Machines Corporation Solution deposition of chalcogenide films
US7163835B2 (en) * 2003-09-26 2007-01-16 E. I. Du Pont De Nemours And Company Method for producing thin semiconductor films by deposition from solution
US20080124831A1 (en) * 2004-02-19 2008-05-29 Robinson Matthew R High-throughput printing of semiconductor precursor layer from chalcogenide particles
US7306823B2 (en) * 2004-09-18 2007-12-11 Nanosolar, Inc. Coated nanoparticles and quantum dots for solution-based fabrication of photovoltaic cells
US20070166453A1 (en) * 2004-02-19 2007-07-19 Nanosolar, Inc. High-throughput printing of chalcogen layer
US20070163640A1 (en) * 2004-02-19 2007-07-19 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer by use of chalcogen-rich chalcogenides
US7115304B2 (en) * 2004-02-19 2006-10-03 Nanosolar, Inc. High throughput surface treatment on coiled flexible substrates
EP1992010A2 (en) * 2006-02-23 2008-11-19 Van Duren, Jeroen K.J. High-throughput printing of chalcogen layer and the use of an inter-metallic material
US7494841B2 (en) * 2006-05-12 2009-02-24 International Business Machines Corporation Solution-based deposition process for metal chalcogenides
US8057850B2 (en) 2006-11-09 2011-11-15 Alliance For Sustainable Energy, Llc Formation of copper-indium-selenide and/or copper-indium-gallium-selenide films from indium selenide and copper selenide precursors
WO2008063190A2 (en) 2006-11-09 2008-05-29 Midwest Research Institute Precursors for formation of copper selenide, indium selenide, copper indium diselenide, and/or copper indium gallium diselenide films
US20080280030A1 (en) * 2007-01-31 2008-11-13 Van Duren Jeoren K J Solar cell absorber layer formed from metal ion precursors
US20080264479A1 (en) * 2007-04-25 2008-10-30 Nanoco Technologies Limited Hybrid Photovoltaic Cells and Related Methods
EP2212916B1 (en) * 2007-11-30 2018-06-06 Nanoco Technologies Limited Preparation of nanoparticle material
US8613973B2 (en) * 2007-12-06 2013-12-24 International Business Machines Corporation Photovoltaic device with solution-processed chalcogenide absorber layer
CN102439097A (zh) * 2009-05-21 2012-05-02 纳幕尔杜邦公司 硫化铜锡和硫化铜锌锡墨组合物
US8277894B2 (en) * 2009-07-16 2012-10-02 Rohm And Haas Electronic Materials Llc Selenium ink and methods of making and using same
US20110076798A1 (en) * 2009-09-28 2011-03-31 Rohm And Haas Electronic Materials Llc Dichalcogenide ink containing selenium and methods of making and using same

Also Published As

Publication number Publication date
US8513052B2 (en) 2013-08-20
JP5666836B2 (ja) 2015-02-12
EP2287115B1 (en) 2014-03-05
EP2287115A2 (en) 2011-02-23
EP2287115A3 (en) 2011-04-06
US8308973B2 (en) 2012-11-13
JP2011052206A (ja) 2011-03-17
US20110020981A1 (en) 2011-01-27
KR20110011547A (ko) 2011-02-08
US20130034933A1 (en) 2013-02-07
TW201107431A (en) 2011-03-01
TWI432533B (zh) 2014-04-01
KR101199033B1 (ko) 2012-11-08

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C10 Entry into substantive examination
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C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20110209