CN101964370A - 太阳能模组 - Google Patents

太阳能模组 Download PDF

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CN101964370A
CN101964370A CN2009103048247A CN200910304824A CN101964370A CN 101964370 A CN101964370 A CN 101964370A CN 2009103048247 A CN2009103048247 A CN 2009103048247A CN 200910304824 A CN200910304824 A CN 200910304824A CN 101964370 A CN101964370 A CN 101964370A
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carbon nano
solar
tube
solar chip
chip
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CN101964370B (zh
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余泰成
黄雍伦
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0543—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

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  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
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Abstract

一种太阳能模组，其包括载体和设置在所述载体上的太阳能芯片，所述太阳能芯片用于将太阳能转化为电能并具有受光面，所述太阳能模组进一步包括封装体和第一碳纳米管薄膜，所述第一碳纳米管薄膜设置所述太阳能芯片的受光面上，所述封装体设置所述第一碳纳米管薄膜、太阳能芯片和电路单元。

Description

太阳能模组
技术领域
本发明涉及一种太阳能模组，尤其是一种散热效果好、内部结构不受影响的太阳能模组。
背景技术
随着工业的快速发展，石化燃料逐步耗竭与温室效应气体排放问题日益受到全球关注，能源的稳定供应已成为全球性的重大课题。
相较于传统燃煤、燃气式或者核能发电，太阳能电池(solar cell)是利用光发电效应直接将太阳能转换为电能，因而不会伴随产生二氧化碳、氮氧化物以及硫氧化物等温室效应气体及污染型气体，并可减少对石化燃料的依赖从而提供安全自主的电力来源。
一般的太阳能电池结构是将太阳能芯片、驱动电路等整合在一基板上，太阳能芯片通过铜导线与驱动电路电性相连，然后在基板上焊接金属材质的基板作为散热装置，以将太阳能芯片、驱动电路等工作时产生的热引导至外部从而保证太阳能电池结构能够正常工作。
太阳能芯片和驱动电路工作时会产生大量的热量，如果不能及时将热量散发出去，太阳能电池的性能就会受到影响；另外，太阳能芯片、驱动电路等裸露在空气中，水滴等液体使得太阳能电池内部的电路连接容易发生短路。
发明内容
有鉴于此，有必要提供一种散热效果好、内部结构不受影响的太阳能模组。
一种太阳能模组，其包括载体和设置在所述载体上的太阳能芯片，所述太阳能芯片用于将太阳能转化为电能并具有受光面，所述太阳能模组进一步包括封装体和第一碳纳米管薄膜，所述第一碳纳米管薄膜设置在所述太阳能芯片的受光面上，所述封装体覆盖所述第一碳纳米管薄膜和太阳能芯片。
与现有技术相比，本发明实施例的太阳能芯片上设置有第一碳纳米管薄膜，碳纳米管具有良好的散热性，所以，太阳能芯片工作时产生的热量可经第一碳纳米管薄膜散出，因此，太阳能模组具有较高的散热效果；另外，封装体可以保护太阳能芯片以防止短路的发生。
附图说明
图1为本发明实施例太阳能模组的示意图。
具体实施方式
下面将结合附图对本发明作进一步详细说明。
请参阅图1所示，本发明实施例的太阳能模组10包括载体11、太阳能芯片12、封装体13和电路单元14。
载体11的材料可以为铝或陶瓷。太阳能芯片12具有受光面120，其可以为III-V族太阳能芯片、非晶硅太阳能芯片或硅晶太阳能芯片。其中，III-V族太阳能芯片可以为氮化镓(GaN)太阳能芯片、砷化镓(GaAs)太阳能芯片、锑化镓(GaTi)太阳能芯片或磷化铟(InP)太阳能芯片，硅晶太阳能芯片为单晶硅太阳能芯片或者多晶硅太阳能芯片。
太阳能芯片12通过碳纳米管线121与电路单元14电性连接且以适当的方式设置在载体11上接受太阳光并将太阳光转换为电能输出，例如太阳能芯片12利用粘着层112设置在载体11上。碳纳米管线121是由碳纳米管做成的导线，其可为一根碳纳米管或多根排列成束的碳纳米管，碳纳米管为单壁碳纳米管或多壁碳纳米管。特别地，载体11上具有容纳太阳能芯片12的容置腔111。由于碳纳米管线121是透明的，所以不会阻挡入射到太阳能芯片12上的太阳光，从而具有较高的光利用率。
太阳能芯片12可以是矩阵排列的若干个面积较小(例如，面积在1平方毫米与9平方毫米之间)的芯片，也可以为一个面积较大(例如，面积为平方厘米或以上级别)的芯片。太阳能芯片12上设置有第一碳纳米管薄膜122，其具有较好的散热效果，因此，可增加太阳能芯片12的散热性。第一碳纳米管薄膜122包括多个定向排列的碳纳米管，例如单壁碳纳米管、多壁碳纳米管或单壁碳纳米管和多壁碳纳米管，碳纳米管的排列方向平行太阳能芯片12的受光面120。
封装体13的材料为硅胶(PDMS，poly dimethyl siloxane)、环氧树脂(epoxyresins)或者聚甲基丙烯酸甲酯(PMMA)，其覆太阳能芯片12、碳纳米管线121和电路单元14且对应太阳能芯片12的位置形成有菲涅尔透镜(Fresnel lens)131。
菲涅尔透镜131的个数可以根据太阳能芯片12的大小相应调整，例如，一个以上的菲涅尔透镜131可以对应一个面积较大的太阳能芯片12、一个较大的非涅尔透镜131可以对应一个以上的面积较小的太阳能芯片12、或者一个非涅尔透镜131对应一个太阳能芯片12。
封装体13不仅可以保护设置在载体11上太阳能芯片12、碳纳米管线121和电路单元14，同时可避免水滴等液体的干扰使其太阳能模组10发生短路现象，另外还可以固定碳纳米管线121以保证太阳能芯片12和电路单元14之间的电性连接。由于菲涅尔透镜131对光线具有会聚作用，可将更多的太阳光聚到太阳能芯片12上，因此，提高了太阳光的利用率。
另外，载体11的多个表面上设有铜或不锈钢层113，该多个表面与设有太阳能芯片12的表面相连，铜或不锈钢层113可以起到防电磁干扰的功能，从而使得太阳能芯片12、电路单元14不受外界干扰保持良好的工作性能。特别地，当载体11的材料为金属时，需要在铜或不锈钢层13与载体11之间设有绝缘层114。
此外，载体11的与设有太阳能芯片12的表面相对的表面上设有第二碳纳米管薄膜123，其具有较好的散热效果，因此，可增加太阳能模组10的整体散热效果。第二碳纳米管薄膜123包括多个定向排列的碳纳米管，例如单壁碳纳米管、多壁碳纳米管或单壁碳纳米管和多壁碳纳米管。优选地，碳纳米管的排列方向平行载体11的与设有太阳能芯片12的表面相对的表面。
可以理解的是，本领域技术人员还可于本发明精神内做其它变化等用于本发明的设计，只要其不偏离本发明的技术效果均可。这些依据本发明精神所做的变化，都应包含在本发明所要求保护的范围之内。

Claims (10)

1.一种太阳能模组，其包括载体和设置在所述载体上的太阳能芯片，所述太阳能芯片用于将太阳能转化为电能并具有一受光面，其特征在于：所述太阳能模组进一步包括封装体和第一碳纳米管薄膜，所述第一碳纳米管薄膜设置所述太阳能芯片的受光面上，所述封装体覆盖所述第一碳纳米管薄膜和太阳能芯片。
2.如权利要求1所述的太阳能模组，其特征在于：所述第一碳纳米管薄膜包括多个定向排列的碳纳米管，其排列方向与所述太阳能芯片的受光面相平行，所述碳纳米管为单壁碳纳米管、多壁碳纳米管或单壁碳纳米管和多壁碳纳米管。
3.如权利要求1所述的太阳能模组，其特征在于：所述封装体对应所述太阳能芯片的位置形成有菲涅尔透镜，太阳光通过所述菲涅尔透镜会聚至所述太阳能芯片上。
4.如权利要求1所述的太阳能模组，其特征在于：进一步包括设置在所述载体上的电路单元，所述太阳能芯片通过碳纳米管线与所述电路单元电性相连。
5.如权利要求4所述的太阳能模组，其特征在于：所述碳纳米管线包括一根碳纳米管或多根排列成束的碳纳米管，所述碳纳米管为单壁碳纳米管或多壁碳纳米管。
6.如权利要求1至5任一项所述的太阳能模组，其特征在于：所述载体的与设有所述太阳能芯片的表面相背对的表面上设有第二碳纳米管薄膜以散发热量。
7.如权利要求6所述的太阳能模组，其特征在于：所述第二碳纳米管薄膜包括多个定向排列的碳纳米管，其排列方向与设有所述太阳能芯片的表面相背对的表面相平行，所述碳纳米管为单壁纳米管、多壁碳纳米管或单壁纳米管和多壁碳纳米管。
8.如权利要求7所述的太阳能模组，其特征在于：所述载体的与设有所述太阳能芯片的表面相连的表面上设有铜或不锈钢层以防电磁干扰。
9.如权利要求8所述的太阳能模组，其特征在于：所述铜或不锈钢层与所述载体之间具有绝缘层。
10.如权利要求9所述的太阳能模组，其特征在于：所述太阳能芯片通过粘着层设置在所述载体上。
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CN104659139B (zh) * 2015-02-06 2016-11-23 浙江大学 一种带有菲涅尔透镜纳米结构的太阳能电池
CN107093645A (zh) * 2017-03-29 2017-08-25 江苏福克斯新能源科技有限公司 一种具有凹槽结构的光伏组件及其制备方法

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