CN107093645A - 一种具有凹槽结构的光伏组件及其制备方法 - Google Patents

一种具有凹槽结构的光伏组件及其制备方法 Download PDF

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CN107093645A
CN107093645A CN201710195577.6A CN201710195577A CN107093645A CN 107093645 A CN107093645 A CN 107093645A CN 201710195577 A CN201710195577 A CN 201710195577A CN 107093645 A CN107093645 A CN 107093645A
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袁正
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Suining Atlas New Energy Co., Ltd.
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Abstract

本发明提供了一种具有凹槽结构的光伏组件及其制备方法。所述光伏组件由下至上依次包括金属基板、绝缘层、导电线路层、多个背接触太阳能电池、封装胶以及玻璃盖板，所述金属背板包括多个阵列分布的凹槽，在所述金属背板的表面以及所述凹槽的侧面和底面覆盖有所述绝缘层，所述导电线路层位于所述绝缘层上且电连接多个所述背接触太阳能电池，每一所述凹槽容纳一个或多个所述背接触太阳能电池。本发明通过将背接触太阳能电池设置于金属基板的凹槽中，使得背接触太阳能电池在光电转换过程中产生的热量直接通过金属背板而传导出去，提高了太阳能电池组件的散热性能，进而提高了太阳能电池组件的使用寿命。

Description

一种具有凹槽结构的光伏组件及其制备方法
技术领域
本发明涉及太阳能电池技术领域，具体涉及一种具有凹槽结构的光伏组件及其制备方法。
背景技术
目前，传统的燃料能源正在一天天减少，对环境造成的危害日益突出，同时全球还有 20亿人得不到正常的能源供应。这个时候，全世界都把目光投向了可再生能源，希望可再 生能源能够改变人类的能源结构，维持长远的可持续发展。这之中太阳能以其独有的优势 而成为人们重视的焦点。丰富的太阳辐射能是重要的能源，是取之不尽、用之不竭的、无污染、廉价、人类能够自由利用的能源。太阳能每秒钟到达地面的能量高达80万千瓦， 假如把地球表面0.1％的太阳能转为电能，转变率5％，每年发电量可达5.6×1012千瓦小时， 相当于目前世界上能耗的40倍。虽然太阳能是最为丰富的可再生能源资源，然而太阳能电池组件的散热问题一直是人们的研究热点，而现有的散热型太阳能电池组件的散热性能较差。
发明内容
本发明的目的是克服上述现有技术的不足，提供一种具有凹槽结构的光伏组件及其制备方法，通过将背接触太阳能电池设置于金属基板的凹槽中，使得背接触太阳能电池在光电转换过程中产生的热量直接通过金属背板而传导出去，提高了太阳能电池组件的散热性能，进而提高了太阳能电池组件的使用寿命。
为实现上述目的，本发明提出的一种具有凹槽结构的光伏组件，所述光伏组件由下至上依次包括金属基板、绝缘层、导电线路层、多个背接触太阳能电池、封装胶以及玻璃盖板，所述金属背板包括多个阵列分布的凹槽，在所述金属背板的表面以及所述凹槽的侧面和底面覆盖有所述绝缘层，所述导电线路层位于所述绝缘层上且电连接多个所述背接触太阳能电池，每一所述凹槽容纳一个或多个所述背接触太阳能电池。
作为优选，所述金属背板的材质为铝、铜、不锈钢或银，所述金属背板的厚度为500微米-10毫米，所述凹槽具有倾斜的侧面，所述倾斜的侧面与凹槽底部的水平面的夹角为30-60度，所述凹槽的底部的尺寸与所述背接触太阳能电池的尺寸相同。
作为优选，所述绝缘层为有机绝缘层或无机绝缘层，所述绝缘层的厚度为50-200纳米，所述绝缘层中含有光散射粒子。
作为优选，所述导电线路层的材质为银、铝、铜、钛、钯中的一种或多种。
作为优选，所述封装胶的材质为硅胶、乙烯-醋酸乙烯共聚物、聚甲基丙烯酸甲酯、环氧树脂或氟树脂中的一种。
作为优选，所述背接触太阳能电池为单晶硅电池片、多晶硅电池片、砷化镓电池片、铜铟镓硒电池片、单晶锗电池片中的一种。
本发明还提出了一种具有凹槽结构的光伏组件的制备方法，其包括如下步骤：
（1）制备金属背板，利用选择性刻蚀工艺在金属基材上形成多个阵列分布的凹槽；
（2）然后在金属背板的表面以及所述凹槽的侧面和底面形成有所述绝缘层，然后在绝缘层上形成导电线路层；
（3）将背接触太阳能电池置于凹槽中，并且与导电线路层进行电连接；
（4）注入封装胶，盖上玻璃盖板，以形成具有凹槽结构的光伏组件。
本发明的有益效果如下：本发明通过将背接触太阳能电池设置于金属基板的凹槽中，使得背接触太阳能电池在光电转换过程中产生的热量直接通过金属背板而传导出去，提高了太阳能电池组件的散热性能，进而提高了太阳能电池组件的使用寿命；本发明在绝缘层中设置光散射粒子，照射至绝缘层的太阳能经过多次反射或折射而被太阳能电池吸收，提高了太阳光的利用率，进而提高了太阳能电池的光电转换效率，通过优化凹槽倾斜的侧面与凹槽底部的水平面的夹角，进一步提高太阳光的利用率。
附图说明
图1为本发明的具有凹槽结构的光伏组件的剖视图；
图2为本发明的具有凹槽结构的光伏组件的俯视图；
图3为图1中AA区域的放大图。
具体实施方式
参见图1至图3，本发明首先提供了一种具有凹槽结构的光伏组件，所述光伏组件由下至上依次包括金属基板1、绝缘层2、导电线路层3、多个背接触太阳能电池4、封装胶5以及玻璃盖板6，所述金属背板1包括多个阵列分布的凹槽，在所述金属背板1的表面以及所述凹槽的侧面和底面覆盖有所述绝缘层2，所述导电线路层3位于所述绝缘层2上且电连接多个所述背接触太阳能电池4，每一所述凹槽容纳一个或多个所述背接触太阳能电池4。所述金属背板的材质为铝、铜、不锈钢或银，所述金属背板的厚度为500微米-10毫米，所述凹槽具有倾斜的侧面，所述倾斜的侧面与凹槽底部的水平面的夹角为30-60度，所述凹槽的底部的尺寸与所述背接触太阳能电池的尺寸相同。所述绝缘层为有机绝缘层或无机绝缘层，所述绝缘层的厚度为50-200纳米，所述绝缘层中含有光散射粒子。所述导电线路层的材质为银、铝、铜、钛、钯中的一种或多种。所述封装胶的材质为硅胶、乙烯-醋酸乙烯共聚物、聚甲基丙烯酸甲酯、环氧树脂或氟树脂中的一种。所述背接触太阳能电池为单晶硅电池片、多晶硅电池片、砷化镓电池片、铜铟镓硒电池片、单晶锗电池片中的一种。
本发明还提出了一种具有凹槽结构的光伏组件的制备方法，其包括如下步骤：
（1）制备金属背板，利用选择性刻蚀工艺在金属基材上形成多个阵列分布的凹槽；
（2）然后在金属背板的表面以及所述凹槽的侧面和底面形成有所述绝缘层，然后在绝缘层上形成导电线路层；
（3）将背接触太阳能电池置于凹槽中，并且与导电线路层进行电连接；
（4）注入封装胶，盖上玻璃盖板，以形成具有凹槽结构的光伏组件。
实施例1：
参见图1至图3，一种具有凹槽结构的光伏组件，所述光伏组件由下至上依次包括金属基板1、绝缘层2、导电线路层3、多个背接触太阳能电池4、封装胶5以及玻璃盖板6，所述金属背板1包括多个阵列分布的凹槽，在所述金属背板1的表面以及所述凹槽的侧面和底面覆盖有所述绝缘层2，所述导电线路层3位于所述绝缘层2上且电连接多个所述背接触太阳能电池4，每一所述凹槽容纳一个或多个所述背接触太阳能电池4。所述金属背板的材质为铝，所述金属背板的厚度为5毫米，所述凹槽具有倾斜的侧面，所述倾斜的侧面与凹槽底部的水平面的夹角为45度，所述凹槽的底部的尺寸与所述背接触太阳能电池的尺寸相同。所述绝缘层为有机绝缘层，所述绝缘层的厚度为150纳米，所述绝缘层中含有光散射粒子。所述导电线路层的材质为银。所述封装胶的材质为硅胶。所述背接触太阳能电池为单晶硅电池片。
本发明通过将背接触太阳能电池设置于金属基板的凹槽中，使得背接触太阳能电池在光电转换过程中产生的热量直接通过金属背板而传导出去，提高了太阳能电池组件的散热性能，进而提高了太阳能电池组件的使用寿命；本发明在绝缘层中设置光散射粒子，照射至绝缘层的太阳能经过多次反射或折射而被太阳能电池吸收，提高了太阳光的利用率，进而提高了太阳能电池的光电转换效率，通过优化凹槽倾斜的侧面与凹槽底部的水平面的夹角，进一步提高太阳光的利用率。
最后应说明的是：显然，上述实施例仅仅是为清楚地说明本发明所作的举例，而并非对实施方式的限定。对于所属领域的普通技术人员来说，在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。而由此所引申出的显而易见的变化或变动仍处于本发明的保护范围之中。

Claims (7)

1.一种具有凹槽结构的光伏组件，其特征在于：所述光伏组件由下至上依次包括金属基板、绝缘层、导电线路层、多个背接触太阳能电池、封装胶以及玻璃盖板，所述金属背板包括多个阵列分布的凹槽，在所述金属背板的表面以及所述凹槽的侧面和底面覆盖有所述绝缘层，所述导电线路层位于所述绝缘层上且电连接多个所述背接触太阳能电池，每一所述凹槽容纳一个或多个所述背接触太阳能电池。
2.根据权利要求1所述的具有凹槽结构的光伏组件，其特征在于：所述金属背板的材质为铝、铜、不锈钢或银，所述金属背板的厚度为500微米-10毫米，所述凹槽具有倾斜的侧面，所述倾斜的侧面与凹槽底部的水平面的夹角为30-60度，所述凹槽的底部的尺寸与所述背接触太阳能电池的尺寸相同。
3.根据权利要求1所述的具有凹槽结构的光伏组件，其特征在于：所述绝缘层为有机绝缘层或无机绝缘层，所述绝缘层的厚度为50-200纳米，所述绝缘层中含有光散射粒子。
4.根据权利要求1所述的具有凹槽结构的光伏组件，其特征在于：所述导电线路层的材质为银、铝、铜、钛、钯中的一种或多种。
5.根据权利要求1或2所述的具有凹槽结构的光伏组件，其特征在于：所述封装胶的材质为硅胶、乙烯-醋酸乙烯共聚物、聚甲基丙烯酸甲酯、环氧树脂或氟树脂中的一种。
6.根据权利要求1所述的具有凹槽结构的光伏组件，其特征在于：所述背接触太阳能电池为单晶硅电池片、多晶硅电池片、砷化镓电池片、铜铟镓硒电池片、单晶锗电池片中的一种。
7.一种如权利要求1-6任一项所述的具有凹槽结构的光伏组件的制备方法，其特征在于：其包括如下步骤：
（1）制备金属背板，利用选择性刻蚀工艺在金属基材上形成多个阵列分布的凹槽；
（2）然后在金属背板的表面以及所述凹槽的侧面和底面形成有所述绝缘层，然后在绝缘层上形成导电线路层；
（3）将背接触太阳能电池置于凹槽中，并且与导电线路层进行电连接；
（4）注入封装胶，盖上玻璃盖板，以形成具有凹槽结构的光伏组件。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107887467A (zh) * 2017-11-07 2018-04-06 苏州顺创新能源科技有限公司 一种太阳能背板薄膜

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101964370A (zh) * 2009-07-24 2011-02-02 鸿富锦精密工业（深圳）有限公司 太阳能模组
CN102084193A (zh) * 2008-06-05 2011-06-01 索尔福克斯股份有限公司 太阳能集中器背板
CN102812556A (zh) * 2009-11-25 2012-12-05 榕树能源公司 太阳能模块结构
CN103383973A (zh) * 2013-07-25 2013-11-06 英利能源（中国）有限公司 一种双玻太阳能组件新型封装结构及其制备方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102084193A (zh) * 2008-06-05 2011-06-01 索尔福克斯股份有限公司 太阳能集中器背板
CN101964370A (zh) * 2009-07-24 2011-02-02 鸿富锦精密工业（深圳）有限公司 太阳能模组
CN102812556A (zh) * 2009-11-25 2012-12-05 榕树能源公司 太阳能模块结构
CN103383973A (zh) * 2013-07-25 2013-11-06 英利能源（中国）有限公司 一种双玻太阳能组件新型封装结构及其制备方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107887467A (zh) * 2017-11-07 2018-04-06 苏州顺创新能源科技有限公司 一种太阳能背板薄膜
CN107887467B (zh) * 2017-11-07 2019-10-08 苏州顺创新能源科技有限公司 一种太阳能背板薄膜

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