CN101959810A - Be used to cool off the system and method that scribbles semi-conductive hot glass sheet - Google Patents
Be used to cool off the system and method that scribbles semi-conductive hot glass sheet Download PDFInfo
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- CN101959810A CN101959810A CN2009801072767A CN200980107276A CN101959810A CN 101959810 A CN101959810 A CN 101959810A CN 2009801072767 A CN2009801072767 A CN 2009801072767A CN 200980107276 A CN200980107276 A CN 200980107276A CN 101959810 A CN101959810 A CN 101959810A
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B29/00—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins
- C03B29/04—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins in a continuous way
- C03B29/06—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins in a continuous way with horizontal displacement of the products
- C03B29/08—Glass sheets
- C03B29/10—Glass sheets being in a vertical position
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B25/00—Annealing glass products
- C03B25/04—Annealing glass products in a continuous way
- C03B25/06—Annealing glass products in a continuous way with horizontal displacement of the glass products
- C03B25/08—Annealing glass products in a continuous way with horizontal displacement of the glass products of glass sheets
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B25/00—Annealing glass products
- C03B25/04—Annealing glass products in a continuous way
- C03B25/06—Annealing glass products in a continuous way with horizontal displacement of the glass products
- C03B25/08—Annealing glass products in a continuous way with horizontal displacement of the glass products of glass sheets
- C03B25/087—Annealing glass products in a continuous way with horizontal displacement of the glass products of glass sheets being in a vertical position
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B29/00—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins
- C03B29/04—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins in a continuous way
- C03B29/06—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins in a continuous way with horizontal displacement of the products
- C03B29/08—Glass sheets
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B35/00—Transporting of glass products during their manufacture, e.g. hot glass lenses, prisms
- C03B35/14—Transporting hot glass sheets or ribbons, e.g. by heat-resistant conveyor belts or bands
- C03B35/20—Transporting hot glass sheets or ribbons, e.g. by heat-resistant conveyor belts or bands by gripping tongs or supporting frames
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
Abstract
Be used for system's (20,20 ') and method that cooling stations (36) internal cooling in vacuum chamber (24) scribbles semi-conductive hot glass sheet.Between the radiant heat absorber element (112) of radiant heat absorber (110), carry and scribble semi-conductive hot glass sheet, be used to provide cooling.In one embodiment, vertically carry sheet glass to cool off, and in another embodiment, flatly carry sheet glass.
Description
Background of invention
1. invention field
The present invention relates to be used to cool off the system and method that scribbles semi-conductive hot glass sheet.
2. background technology
Semiconductor devices such as electro-optical package were before constructed by coating semiconductor material on the sheet glass substrate.Referring to United States Patent (USP): people such as 5016562 Madan; People such as 5248349 Foote; People such as 5372646 Foote; People such as 5470397 Foote; With people such as 5536333 Foote, these all patents all disclose the horizontal roller (horizontal roller) that is used for carrying sheet glass when this coating.
When carrying out research related to the present invention, other prior art document that is write down comprises people such as United States Patent (USP) 4545327 Campbell; 4593644 Hanak; People such as 5288329 Nakamura; People such as 6013134 Chu; With 6827788 Takahashi people and the disclosed patent application US2007/0137574 of the U.S..
Summary of the invention
The purpose of this invention is to provide a kind of improved system that scribbles semi-conductive hot glass sheet that is used to cool off.
When stating purpose on the implementation, be used to cool off the system of the present invention that scribbles semi-conductive hot glass sheet and comprise the housing that limits vacuum chamber, and comprise and be used to carry the hot glass sheet that just scribbled semiconductor material handling machinery by vacuum chamber.Cooling stations comprises the radiant heat absorber with radiant heat absorber element, this radiant heat absorber element separates each other with the relation of opposition, scribble semi-conductive sheet glass and between the radiant heat absorber element, carry, so that the radiant heat absorber element provides cooling from its absorbing radiation heat.
In a disclosed embodiment of this system, handling machinery has the top upholder (upper support) that support scribbles the upper end of semi-conductive sheet glass, passing when carrying between vacuum chamber and the radiant heat absorber element, scribble semi-conductive sheet glass and hang from above downwards from the top upholder with vertical direction at radiant heat absorber.The radiant heat absorber element of the radiant heat absorber of this embodiment has the smooth heat absorbing surface of common successive, this heat absorbing surface is vertically extended, and it is in opposition to each other with parallel relation to separate, and, vertically the Ding Xiang semi-conductive sheet glass that scribbles is carried between heat absorbing surface, so that cool off.
In another disclosed embodiment of this system, handling machinery is included in the horizontal roller that separates along housing in the vacuum chamber, is used for passing vacuum chamber and flatly carries between the radiant heat absorber element of radiant heat absorber scribbling semi-conductive sheet glass.The radiant heat absorber of this embodiment comprises top heat absorbing element and bottom heat absorbing element, top heat absorbing element and bottom heat absorbing element all comprise smooth heat absorbing surface, and the top heat absorbing element have the common successive that is spaced on the handling machinery roller down towards heat absorbing surface, and the bottom heat absorbing element comprises the part that separates between the handling machinery roller, and, the part that separates have up towards the heat absorbing surface part, this heat absorbing surface partly is spaced scribbling below the semi-conductive sheet glass of being transferred.In addition, thermal absorption part in bottom has whole single structure as disclosed, and this structure comprises the bottom base, and its part that separates is protruding upward from the bottom base between the handling machinery roller.
In two embodiments, radiant heat absorber can be graphite or refractory materials, and this refractory materials is α attitude silicon carbide preferably.
More specifically, first embodiment discloses its handling machinery, this handling machinery is provided with the top upholder that support scribbles the upper end of semi-conductive sheet glass, passing when carrying between vacuum chamber and the radiant heat absorber element at radiant heat absorber, scribble semi-conductive sheet glass hangs from above with vertical from the top upholder with being directed downwards, and the radiant heat absorber element of radiant heat absorber is made by refractory materials, and has the smooth heat absorbing surface of common successive, this heat absorbing surface is vertically extended, and it is in opposition to each other with parallel relation to separate, and, vertically the Ding Xiang semi-conductive sheet glass that scribbles is carried between heat absorbing surface, so that cool off.
Equally, second embodiment has its handling machinery as disclosed, this handling machinery is provided with the horizontal roller that separates each other along housing in vacuum chamber, be used for passing vacuum chamber and between the radiant heat absorber element of radiant heat absorber, flatly carry and scribble semi-conductive sheet glass, and this radiant heat absorber comprises top heat absorbing element and bottom heat absorbing element, top heat absorbing element and bottom heat absorbing element are all made by refractory materials, and comprise smooth heat absorbing surface, and more specifically, the top heat absorbing element have the common successive that is spaced on the handling machinery roller down towards heat absorbing surface, and the bottom heat absorbing element comprises the part that separates between the handling machinery roller, and, the part that separates have up towards the heat absorbing surface part, this heat absorbing surface partly is spaced scribbling below the semi-conductive sheet glass of being transferred.In addition, the bottom thermal absorption part of refractory materials has whole single structure as disclosed, and this structure comprises bottom refractory materials base, and the part that separates of its refractory materials is protruding upward from bottom refractory materials base between the handling machinery roller.
Another object of the present invention provides a kind of improved method that scribbles semi-conductive hot glass sheet that is used to cool off.
When implementing the above-mentioned purpose that is right after, being used to cool off the method for the present invention that scribbles semi-conductive hot glass sheet is to be transported between a pair of radiant heat absorber element that separates by the hot glass sheet that will just scribble semiconductor material in vacuum chamber to implement, this radiant heat absorber element receives the radiant heat from the sheet glass that applies, and is used to provide cooling.
In the once practice of described method, scribbling semi-conductive hot glass sheet is being supported to carry in the upper end of the sheet glass that applies by handling machinery in the direction of vertically extending, and be transported between the radiant heat absorber element that vertically extends, so that cool off.
In another time practice of described method, scribble semi-conductive hot glass sheet and be transported on the roller of gravity roller carrier between top radiant heat absorber element and the bottom radiant heat absorber element, and semiconductor material is upwards towards the top heat absorbing element with the direction of flatly extending.In the current practice of described method, scribbling semi-conductive hot glass sheet cools off from above by top radiant heat absorber element, and cool off from below by bottom radiant heat absorber element, this top radiant heat absorber element have successive down towards the surface, this bottom radiant heat absorber element has between the transfer roller roller part of up protruding that separates.
In twice practice of described method, the radiant heat absorber element can be made by refractory materials, particularly α attitude silicon carbide.
When in conjunction with the accompanying drawings from the detailed description of embodiment preferred, purpose of the present invention, feature and advantage are very tangible.
The accompanying drawing summary
Fig. 1 is the skeleton view that is used to cool off an embodiment of the system that scribbles semi-conductive hot glass sheet according to of the present invention.
Fig. 2 is the skeleton view of explanation transmission mechanism and shuttle (shuttle), and described shuttle is used for vertically hanging sheet glass from upper end, and provides it to pass through the conveying of system.
Fig. 3 is a partial view, the rotation actuated element support of magnetic has been described and has driven shuttle and the mode that is suspended on the vertical sheet glass on the shuttle rotatably.
Fig. 4 is the top synoptic diagram of described system, and the module structure and a pair of side by side the handling machinery of system has been described, described handling machinery vertically carries sheet glass to pass through the housing vacuum chamber of system, so that carry out semiconductor deposition.
Fig. 5 is the sectional view that has applied the sheet glass of semiconductor material by top, and has amplified the thickness of semiconductor material for illustrative purposes.
Fig. 6 is the schematic orthographic plan of radiation heater of explanation in the heating station of stove, and described stove is used to provide the radiation heating of the sheet glass of vertically being carried, and thinks that semiconductor deposition prepares.
Fig. 7 is vertical sheet glass is carried in explanation in deposition station schematic upper plane figure, and semiconductor material deposits in described deposition station.
Fig. 8 is that the schematic upper plane figure when scribbling semi-conductive sheet glass by cooling stations is carried in explanation, and radiant heat absorber provides the cooling of sheet glass in described cooling stations.
Fig. 9 is a front view, and the mode that elongated sheet glass is carried with its major axis level has been described.
Figure 10 is the figure similar to Fig. 9, and the mode that elongated sheet glass is vertically carried with its major axis has been described.
Figure 10 a and 10b are the side-view and the end views of resulting sheet glass, do not consider whether carry as shown in Figure 9 or as shown in figure 10, and have illustrated that resulting upper end 40 all comprises anchor clamps mark (tong mark) 44 ' on two surfaces of sheet glass
Figure 11 is that this system cools scribbles semi-conductive hot glass sheet according to the upper plane figure of another embodiment of system of the present invention.
Figure 12 is the sectional view that the direction of the line 12-12 of the cooling stations that passes through system in Figure 11 obtains, and flatly carries the mode that scribbles semi-conductive sheet glass with explanation between the radiant heat absorber element of radiant heat absorber on gravity roller carrier.
Description of Preferred Embodiments
With reference to figure 1, illustrate by 20 usually according to an embodiment that is used to cool off the system 20 that scribbles semi-conductive hot glass of the present invention, and described system 20 is operated the method that is used for implementing to be used to cool off the hot glass sheet that has semiconductor material.To described system and described method be described in the mode of integral body, to promote understanding to all aspect of the present invention.
Continuation is with reference to figure 1, and system 20 comprises elongated housing, and this elongated housing unification is represented with 22, and had the vacuum chamber 24 that carries out the semi-conductor coating therein.The inlet of system loads lock station (entry load lock station) 26 and is used to make sheet glass to enter vacuum chamber 24, and outlet loading lock station (exit load lock station) 28 is used for after applying the sheet glass of coating being withdrawed from from vacuum chamber 24.Housing comprises the heating station 30 that is used for the heating glass sheet, a pair of deposition station 32 and 34 that is used to chemical vapour deposition that semiconductor material is provided, and cooling stations 36, and all these is described in greater detail below.
Illustrated as Fig. 2 and Fig. 4, each handling machinery 38 all comprises the shuttle 42 of the upper end 40 that is used to support vertical sheet glass, specifically by at anchor clamps shown in Figure 2 44.Anchor clamps 44 can be that whole disclosure of this patent is incorporated into by reference at this by the disclosed type of United States Patent (USP) 3391958 Furer.Also comprise driving member (drive) at each handling machinery 38 shown in Fig. 4, this driving member is uniformly by 46 expressions, and having localized transmission mechanism 48 along system, this transmission mechanism 48 is used to carry shuttle and the vertical sheet glass that is suspended on the shuttle to pass through system.Therefore, driving member 46 at first delivers into shuttle inlet loading lock station 26 by its transmission mechanism 48, and load lock station 26 from inlet and enter the vacuum chamber 24 of elongated housing 22, so that carry, and enter the sheet glass that is used to make coating at last and come out and lock station 28 is loaded in the outlet of transmitting from system by heating station 30, deposition station 32 and 34, cooling stations 36.Arbitrary type suitable returns handling machinery (return conveyor) 50 and can be used for carrying and load shuttle 42 after coming out in lock station 28 from outlet and get back to inlet and load lock station 26 and be used for another circulation.
Shown in Fig. 2 and 4, the upholder part 52 (Fig. 2) that each shuttle 42 has elongated shape and down hangs from above, upholder part 52 has along its hole that separates 54, the suitable position of the length-specific of the sheet glass that is used for carrying being suitable for receives and gripping clamping apparatus 44, so that the upholder that hangs is adjacent with downstream end 58 with the upstream extremity 56 of the upper end 40 of the sheet glass G that is transferred usually.Each all has elongated shape the transmission mechanism 48 of handling machinery driving member 46, and comprises the actuated element 60 of the rotation that separates along its elongated shape, is used for transmission shuttle 42 rotatably, so as to carry vertical sheet glass enter, by with leave system.More specifically, the actuated element 60 of rotation supported by bearing 64 on elongated plate 62, and actuated element 60 is magnetic, so that the transmission of the rotation of shuttle 42 is provided for conveying.Shuttle 42 has top and supports and pulled surface 66, described top is supported and pulled surface 66 is supported by the actuated element 60 of the rotation of magnetic, described actuated element 60 protrudes downwards by the hole 68 in the plate 62 as illustrated in fig. 3, thereby supports the also shuttle surface 60 on transmission ground contact top.
As before discussing, the conveyer drive 48 of handling machinery driving member 46 separates along the length of system, and each all has the moving motor 70 of relevant fax as shown in Figure 2, the same as shown in diagrammatically, and the moving motor 70 of described fax outwards separates with housing 22 from vacuum chamber 24.The bearing of the axle output (shaft output) of each driving motor 70 by sealing extends to the end of transmission shaft 72 of gear unit 60 of the rotation of adjacent magnetic, and the other end of this axle is connected to transmission chain gear (drive sprocket) 74, be used for driving ring-shaped continuous transmission belt or chain 76, and this ring-shaped continuous transmission belt or chain 76 be in order to another sprocket gear 74 on the end of the axle 72 of the actuated element 60 of the rotation of the adjacent magnetic of transmission, and the relevant sprocket gear on the alternative side of transmission mechanism 48 and successive actuated element provide the transmission of rotation of actuated element 60 of the rotation of all magnetic again each other synergistically.
As shown in Figure 5, implement on the surface that is deposited on sheet glass G of semiconductor material, described sheet glass G has at first and is used to provide the doped tin oxide coatings 78 that electrically contacts.After heating station 30 internal heating as shown in Figure 4, first deposition station 32 provides cadmium sulfide layer 80, and this cadmium sulfide layer 80 is semi-conductors of N-type, and has the thickness of about 0.15 μ m.When the transmission of sheet glass proceeded to second deposition station 34, cadmium-telluride layer 82 was deposited on the cadmium sulfide layer 80, and had the thickness of about 3 μ m, was used to provide the semi-conductor of I-type.In this deposition with after system comes out, stannic oxide layer 78, cadmium sulfide layer 80 and cadmium-telluride layer 82 can be separated into a plurality of unit, and another contact is provided on cadmium-telluride layer 82, are used as the multiple-unit electro-optical package that is used for producing from sunlight electricity.
The system's housing 22 that diagrammatically shows in Fig. 4 has the modular that comprises a plurality of housing modules 84, housing module 84 has interconnected opposing face 85, to be used to provide housing 22, housing 22 comprises heating station 30, deposition station 32 and 34, and cooling stations 36.Handling machinery driving member 46 has a transmission mechanism 48 of before having described, this transmission mechanism 48 along the length of each housing module 84 it upstream extremity and downstream end between extend, shuttle 42 to be provided and to be suspended on the conveying of sheet glass by the vacuum chamber of system's housing on the shuttle 42, so that heat, deposit and cool off.Inlet loads lock station 26 and outlet loading lock station 28, and also each all comprises relevant housing module 86, and handling machinery 38 extends through this housing module 86, is used for vacuum chamber 24 that the sheet glass input and output are defined by housing 22.These load lock housing (load lock housing) 86, and each all has entrance door structure (entry door structure) 88 and outlet portal structure 90, and their structure will more completely be described in the back.
When by carrying sheet glass to begin to add man-hour from the right towards the left side as illustrated in fig. 4, the entrance door structure 88 that inlet loads lock station 26 is unlocked, so that allow shuttle 42 is delivered into relevant housing 86 with sheet glass on vertically being suspended on shuttle 42, then, the entrance door structure is closed, and inlet loading lock station is vacuumized so that the vacuum of about 20 holders to be provided by vacuum pump.When reaching required vacuum state, outlet portal structure 98 is opened, to allow shuttle to be transported to the transmission mechanism 48 of initial heating station 30, when moving forward from inlet loading lock station, shuttle enters each housing module, then by heating station 30, deposition station 32 and 34 and during cooling stations 36, the described transmission mechanism of described shuttle bridge joint (bridging).After beginning to enter the vacuum chamber of housing 22, inlet loads the outlet portal structure 90 at lock station 26 and closes, then, its housing module 86 is brought back to environmental stress, and its entrance door structure 88 is unlocked, to allow that next shuttle 42 and the sheet glass that is suspended on the shuttle 42 are transported to inlet loading lock station, to begin next round-robin technology.
After each shuttle 42 is processed in the vacuum chamber of the housing 22 of system 20, described shuttle arrives outlet and loads lock station 28, outlet is as shown in Figure 4 loaded the entrance door structure 88 and the outlet portal structure 90 at lock station 28 and is closed, because its housing module 86 is evacuated to the vacuum of about 20 holders.Outlet is loaded the entrance door structure 88 at lock station 28 and is opened then, be transported to outlet with the sheet glass that allows shuttle and suspension and load lock station 28, then, outlet is loaded the entrance door structure 88 at lock station 28 and is closed, and its housing is got back to environmental stress, and outlet is loaded the outlet portal structure 90 at lock station 28 and opened subsequently, to allow that the sheet glass of shuttle and suspension is transferred out system, so that transmit.
It should be noted that cooling stations 36 is positioned at the upstream that lock station 28 is loaded in outlet as disclosed, so that operate, and help entering the mouth and load lock station 26 and outlet and load both ordinary constitutions (common construction) of lock station 28.But cooling stations is positioned at outlet, and to load lock station 28 also be possible, though be preferred in the position of upstream.Before semiconductor material was exposed to oxygen and arbitrary subsequently and reaction oxygen, it was important below 400 ℃ that this cooling is reduced to about for the temperature with semiconductor material.
Again with reference to figure 2; it should be noted that; each shuttle has opposed side edges (opposite lateral side) 92; and transmission mechanism plate 62 has inclined side (angled side) 93, is used to support be positioned at the following fault protection roller (failsafe roller) 94 of the opposed side edges 92 of shuttle.When the actuated element 60 of the rotation of magnetic was just supported a little the shuttle 42 on fault protection roller 94, these fault protection rollers 94 guaranteed that shuttles 42 do not drop under gravity or other power.
As shown in Figure 6, each housing module 84 of heating station all comprises radiation heater 96, this radiation heater 96 separates at the opposite side of the sheet glass of vertically carrying, and these radiation heaters 96 are embodied in radiant heating panel 98, this radiant heating panel 98 with separate each other and parallel relation vertically directed, make the sheet glass of transmission vertically move betwixt.The suitable position regulator 100 of arbitrary type can be used for adjusting the spacing of radiation heater, with from two of sheet glass relatively towards the surface homogeneity of sheet glass is provided.
Each deposition station 32 and 34 as shown in Figure 4 all has the structure that is similar to as shown in Figure 7, the radiation heater 104 that deposition station 32 and 34 housing module 84 hold deposition module 102 and vertically extend, sheet glass G carries between deposition module 102 and radiation heater 104, is used for relevant semiconductor material deposition at sheet glass.Radiation heater 104 is the same with radiation heater in the heating station, comprises the hot-plate 106 that vertically extends, and the position of this hot-plate 106 can change by regulator 108 as required, so that the homogeneity of glass temperature to be provided when the deposition.Deposition module 102 comprises that the radiation heater that is incorporated into wherein also is possible, so that provide in addition as semiconductor material and sedimentary hot gas.
No matter being positioned at outlet loads the upstream at lock station 28 or is positioned at outlet loading lock station, cooling stations 36 comprises the radiant heat absorber that comprises radiant heat absorber element 112 110 as shown in Figure 8, this radiant heat absorber element 112 is to separate each other and parallel relation is vertically extended, and just scribbled semi-conductive vertical sheet glass and be placed between the radiant heat absorber element 112, to be used for cooling.Radiant heat absorber element 112 has the smooth surface 113 of common successive of opposition, and on this surface, radiant heat is absorbed from the semi-conductive sheet glass of scribbling of heat.Position between regulator 114 control radiant heat absorber elements 112 and the sheet glass G is so that provide the refrigerative homogeneity.
Can use different materials that the radiant heating panel 98 in the heating station, arbitrary radiation heater of deposition module 102 and the radiant heating panel 106 of each deposition station are provided, and the radiant heat absorber element 112 of cooling stations.For example, graphite is spendable relatively cheap material, and has good heat conductance, so that whole homogeneity and temperature is provided; But graphite also oblate in a vacuum even (oblates), and to oxygen sensitive.Also can use α attitude silicon carbide, because it is an atresia, shockproof and not influenced by oxygen; But it is also relatively costly.Possible is, plus heater element is inserted in the radiation heater of heating station and deposition station, or provide radiant heat by plate by the silica tube that for example has kuromore heating unit (Nichrome heating element), make plate use as the heat dispenser.Other radiation heater design also is possible.
During sheet glass processing, each sheet glass can be carried from the inlet end to the exit end with single direction in housing module, can be in each module with forward and the concussion of direction backward, maybe can move forward certain-length and one after the other move a less length then backward, for example with to the first two steps and the mode of stepping backward.
As Fig. 9 and shown in Figure 10, elongated sheet glass G can hang by anchor clamps from relevant shuttle 42, and the major axis of sheet glass can be level or vertical.Vertical hanging will provide bigger coating ability, but need heating station, coating station and the cooling stations element of big vertical height.
No matter sheet glass is as shown in Figure 9 in the elongated direction of level or hang and vertically carry in the direction of perpendicular elongate as shown in figure 10, resulting sheet glass all will be deformed on its two surfaces relatively facing of upper end 40 at sheet glass has anchor clamps mark 44 '.The distortion that these anchor clamps marks 44 ' come free anchor clamps and heated glass sheet to provide.This anchor clamps mark 44 ' that is positioned at upper end is positioned at outside the semiconductor layer 80 and 82 operating area on as shown in Figure 5 the stannic oxide layer 78, and operation that can't the resulting sheet glass of negative impact, for example when using as electro-optical package.When heating, upper end at the sheet glass of carrying vertically hangs, this can keep the smooth of sheet glass, and also can promote to heat and do not change with uniform temperature, for example, take place when this variation may be heated on the handling machinery roller, when carrying, the radiation of handling machinery roller and conduction can change.
The specific working method of using the above-mentioned system that is used to provide electro-optical package 20 will be described now.The thickness that this processing starts from scribbling stannic oxide is of a size of the sheet glass that 600mm * 1200mm promptly is approximately 24 inches * 48 inches for approximate 3.2mm.Originally, the edge of sheet glass substrate is the rhombus bottom (diamond ground) to No. 1 pencil (number 1 pencil), and polished comfortableness and the elimination crack that provides when operating, the damage the when crack can cause operating with heat treated.Edging speed (edging speed) needs approximate 40mm per second, i.e. 90 inches per minutes are so that obtain the cycle rate of two of the per minutes of the system that enters.After edging, clean the sheet glass substrate with suitable sanitising agent, to remove particulate and the preparation that coating is provided, use deionized water rinsing then, be used for after the air mummification, providing the surface of no mineral substance.From the upstream of system 20, suitable laser station will on the sheet glass seal under code, be used for carrying out the control of product and location in technological process.
For is provided cycling time, with the volume matched of vacuum pump system and loading lock chamber, so that the time of bleeding to be provided, for example about 21 seconds to 20 holders.At the loading lock chamber volume is 56 cubic feet, pump speed is under the situation of 580 cubic feet of per minutes, each input and output of loading the lock station adds that exhaust and the time of bleeding add up to 60 seconds total cycle time, wherein, be used to the time of bleeding in 21 seconds, be used for input in 10 seconds and load the lock station, be used for output in 10 seconds, and be used to provide a startup and an airborne release in 19 seconds.
In relevant with Fig. 4 previous system's heating station 30 of having described, the sheet glass substrate will be heated to approximate 585 ℃, think that initial semi-conductor applies to prepare.This will be provided about 25 kilowatts of every sides in initial zone by the heating of before carrying out about the described radiation heater 96 of Fig. 6, and in subsequently 16 kilowatts of every sides in zone, and the radiation hot cell is at approximate 680 ℃, so that 580 ℃ glass surface substrate temperature of expection was provided in approximate 150 seconds.Certainly, for just coated specific sheet glass, transfer rate can with temperature required one change.
In relevant with Fig. 4 previous deposition module of having described 32 and 34 during deposited semiconductor material, the hot gas that the deposition module 102 by as shown in Figure 7 provides makes up with the radiation heater 104 at back and keeps substrate to be in uniform temperature.The possibility that vertical orientation has been eliminated pin hole, had nuclear matter and condensed steam to contact with the sheet glass substrate.The homogeneity of thicknesses of layers depends on the temperature and source steam (source vapor) geometry of sheet glass substrate, and electrical property depend on cling the surface the hole and the shortage of first tuberculosis material (pre nucleated material).
At initial deposition station 32 as shown in Figure 4, apply the Cadmium Sulfide that the N-layer is provided with distillation and the Cadmium Sulfide gas that is heated to 950 ℃ temperature.Be proved, apply speed and will be the total thickness of about 1000 dust per seconds, and the suitable test set in the deposition module will be used to scan coat-thickness to about 900 to 1500 dusts.
The cadmium-telluride layer of P-layer before was provided about described second deposition station 34 of Fig. 4.The sheet glass substrate temperature is approximately 605 ℃, and cadmium telluride will distil and be heated to about 1050 ℃, and coating will provide by variable hole, and with the control sedimentation rate, about 3 microns for thickness, this sedimentation rate will be considered to the speed of 2.5 microns per seconds.
Relevant with Fig. 4 previous cooling stations of having described 36 receives then and scribbles semi-conductive sheet glass substrate, is used to provide about cooling below 400 ℃, is exposed to oxygen and subsequently and reaction oxygen so that prevent the material that applies.Though the same as before having described, it also is possible providing radiation to cool off in the lock station is loaded in outlet, this technology will cause outlet time of increasing, and should the outlet time can increase cycling time.
The sheet glass that applies leave outlet load the lock station in case fail pass after, the water cooler of suitable back will provide the extremely about 50 ℃ cooling that is fit to operation.To test the thickness of cadmium telluride then, be used for determining exactness, the dilute aqueous of Cadmium chloride fine powder is sprayed or roller coating on coated semiconductor, and then the heating glass sheet to about 400 ℃ about 15 minutes, be used for promoting that light arrives the conversion of electricity.Then with sheet glass deionized water wash, flushing and the drying handled.Use suitable laser scribing (laser scribing) and processing then, convert electro-optical package to so that will scribble semi-conductive sheet glass subsequently.
In order to obtain more detailed description to the top system of having described 20, should be with reference to U.S. Patent Application Serial (attorney docket No.WKSG 0101 PUSP), file an application together by people such as James E.Heider at this, title is SYSTEM AND METHOD FOR GLASS SHEET SEMICONDUCTOR COATING AND RESULTANT PRODUCT (system and method that is used for coating of sheet glass semi-conductor and resulting product), and its whole disclosure is incorporated into by reference at this.
With reference to Figure 11, be used to cool off another embodiment of the system 20 ' that scribbles semi-conductive hot glass sheet with at the previous system similarity of describing shown in Fig. 1-10, except that what will note, and therefore has the identical reference number that is applied to its identical assembly, and most of existing description is applicable, and therefore will not repeat.
System 20 ' shown in Figure 11 and 12 has gravity roller carrier 116, and this gravity roller carrier 116 comprises horizontal roller 118, and on horizontal roller 118, sheet glass G is transferred by system, so as it up towards the surface on deposited semiconductor material.The radiant heat absorber 110 of cooling stations 36 as shown in figure 12 has the upper and lower radiant heat absorber element 112 that separates each other with relative relation
uWith 112
l, gravity roller carrier 116 is at upper and lower radiant heat absorber element 112
uWith 112
lBetween carry and to scribble semi-conductive sheet glass so that the radiant heat absorber element from absorbing radiation heat wherein so that cooling to be provided.Upper and lower radiant heat absorber element 112
uWith 112
lHave smooth heat absorbing surface 120 and 122, this heat absorbing surface 120 and 122 respectively from top and below towards the sheet glass G that is transferred so that radiation cooling to be provided.More specifically, the top heat absorbing element 112
uDown towards smooth surface 120 successive normally.Bottom thermal absorption 112
lHave between handling machinery roller 118 part of up protruding that separates 124, and, these part that separates 124 defining surfaces 122 up towards heat absorbing surface part 126, be used to provide from the radiant heat of the lower surface of sheet glass G and absorb.
As shown in figure 12, bottom heat absorbing element 112 has whole single structure, and this structure comprises bottom base 128, and the part 124 that separates is up protruded from bottom base 128 and arrived between the handling machinery roller 118.Therefore the area of the combination of the surface portion 126 that the bottom separates is less than the total area of top continuous surface 120, and the semiconductor layer of top glass surface emissivity heat by applying, and the bottom glass surface does not have such coating.In addition, also radiation and transmit heat to handling machinery roller 118 of bottom glass sheet surface.Regulator 114 allows heat absorbing element 112
uWith 112
lAdjustment therefore so that provide, and keep glass smooth when cooling from top with following identical cooling.It should be noted that bottom handling machinery roller 118 can advantageously make by the fused silica granule of sinter bonded,, and therefore prevent thermal distortion so that have low thermal expansivity.
As the embodiment of describing before, upper and lower radiant heat absorber element 112
uWith 112
lBoth can be made by graphite or refractory materials, and refractory materials is α attitude silicon carbide preferably.
Though have illustrated and described embodiment of the present invention, and do not mean that these embodiment explanations and described all possible forms of the present invention.But the speech that uses in specification sheets is descriptive speech rather than restrictive speech, and is interpreted as doing various variations and without departing from the spirit and scope of the present invention.
Claims (18)
1. one kind is used to cool off the system that scribbles semi-conductive hot glass sheet, comprising:
Housing, it defines vacuum chamber;
Handling machinery, it is used to carry the hot glass sheet that has just scribbled semiconductor material by described vacuum chamber; And
Cooling stations, it comprises radiant heat absorber, described radiant heat absorber has the radiant heat absorber element that separates each other with the relation that opposes, describedly scribble semi-conductive sheet glass and between described radiant heat absorber element, carry, so that described radiant heat absorber element scribbles absorbing radiation heat the semi-conductive sheet glass from described, thereby cooling is provided.
2. as claimed in claim 1ly be used to cool off the system that scribbles semi-conductive hot glass sheet, wherein, described handling machinery has the described top upholder that scribbles the upper end of semi-conductive sheet glass of support, passing when carrying between described vacuum chamber and the described radiant heat absorber element at described radiant heat absorber, describedly scribble semi-conductive sheet glass and hang from above downwards from described top upholder with vertical direction, and the described radiant heat absorber element of described radiant heat absorber has the smooth heat absorbing surface of common successive, the heat absorbing surface that described common successive is smooth vertically extend and with separate and parallel relation in opposition to each other, vertically directed scribble semi-conductive sheet glass and between the smooth heat absorbing surface of described common successive, carry, so that cool off.
3. as claimed in claim 1ly be used to cool off the system that scribbles semi-conductive hot glass sheet, wherein, described handling machinery comprises horizontal roller, described horizontal roller separates along described housing in described vacuum chamber, be used for passing described vacuum chamber and between the described radiant heat absorber element of described radiant heat absorber, flatly carry the described semi-conductive sheet glass that scribbles, described radiant heat absorber comprises top heat absorbing element and bottom heat absorbing element, described top heat absorbing element and described bottom heat absorbing element comprise smooth heat absorbing surface, described top heat absorbing element have the common successive that is spaced on described handling machinery roller down towards heat absorbing surface, and described bottom heat absorbing element comprises the part that separates between described handling machinery roller, and, the described part that separates have up towards the heat absorbing surface part, described up towards heat absorbing surface partly be spaced scribbling below the semi-conductive sheet glass of being transferred.
4. as claimed in claim 3ly be used to cool off the system that scribbles semi-conductive hot glass sheet, wherein, the thermal absorption of described bottom partly has whole single structure, the single structure of described integral body comprises the bottom base, and the part that separates of described bottom thermal absorption part is up protruded from described bottom base between described handling machinery roller.
5. as claimed in claim 1ly be used to cool off the system that scribbles semi-conductive hot glass sheet, wherein, described radiant heat absorption device is made by the material that is selected from graphite and refractory materials.
6. as claimed in claim 1ly be used to cool off the system that scribbles semi-conductive hot glass sheet, wherein, described radiant heat absorber is a α attitude silicon carbide.
7. as claimed in claim 1ly be used to cool off the system that scribbles semi-conductive hot glass sheet, wherein, described handling machinery has the described top upholder that scribbles the upper end of semi-conductive sheet glass of support, passing when carrying between described vacuum chamber and the described radiant heat absorber element at described radiant heat absorber, describedly scribble semi-conductive sheet glass and down hang from above from described top upholder in vertical direction, and the described radiant heat absorber element of described radiant heat absorber is made by refractory materials, and has a smooth heat absorbing surface of common successive, the heat absorbing surface that described common successive is smooth vertically extend and with separate and parallel relation in opposition to each other, vertically directed scribble semi-conductive sheet glass and between the smooth heat absorbing surface of described common successive, carry, so that cool off.
8. as claimed in claim 1ly be used to cool off the system that scribbles semi-conductive hot glass sheet, wherein, described handling machinery comprises horizontal roller, described horizontal roller separates along described housing in described vacuum chamber, be used for passing described vacuum chamber and between the described radiant heat absorber element of described radiant heat absorber, flatly carry the described semi-conductive sheet glass that scribbles, described radiant heat absorber comprises top heat absorbing element and bottom heat absorbing element, described top heat absorbing element and described bottom heat absorbing element are made by refractory materials, and comprise smooth heat absorbing surface, described top heat absorbing element have the common successive that is spaced on described handling machinery roller down towards heat absorbing surface, and described bottom heat absorbing element comprises the part that separates between described handling machinery roller, and, the described part that separates have up towards the heat absorbing surface part, described up towards heat absorbing surface partly be spaced scribbling below the semi-conductive sheet glass of being transferred.
9. as claimed in claim 8ly be used to cool off the system that scribbles semi-conductive hot glass sheet, wherein, the described bottom thermal absorption of refractory materials partly has whole single structure, the single structure of described integral body comprises the bottom base of refractory materials, and the part that separates bottom base from described refractory materials between described handling machinery roller of the refractory materials of described bottom thermal absorption part up protrudes.
10. as claimed in claim 1ly be used to cool off the system that scribbles semi-conductive hot glass sheet, wherein, described handling machinery comprises horizontal roller, described horizontal roller separates along described housing in described vacuum chamber, be used for passing described vacuum chamber and between the described radiant heat absorber element of described radiant heat absorber, flatly carry the described semi-conductive sheet glass that scribbles, described radiant heat absorber comprises top heat absorbing element and bottom heat absorbing element, described top heat absorbing element and described bottom heat absorbing element are made by refractory materials, and comprise smooth heat absorbing surface, described top heat absorbing element have the common successive that is spaced on described handling machinery roller down towards heat absorbing surface, and described bottom heat absorbing element has whole single structure, the single structure of described integral body comprises bottom base and the part of up protruding from described base that separates between described handling machinery roller, and, the described part that separates have up towards the heat absorbing surface part, described up towards heat absorbing surface partly be spaced scribbling below the semi-conductive sheet glass of being transferred.
11. one kind is used to cool off the method that scribbles semi-conductive hot glass sheet, comprises:
The hot glass sheet that will just scribble semiconductor material in vacuum chamber is transported between a pair of radiant heat absorber element that separates, and the described a pair of radiant heat absorber element that separates receives the radiant heat from the sheet glass that applies, and is used to provide cooling.
12. as claimed in claim 11ly be used to cool off the method that scribbles semi-conductive hot glass sheet, wherein, describedly scribble semi-conductive hot glass sheet and supporting to carry in the upper end of the sheet glass that applies by handling machinery in the direction of vertically extending, and be transported between the radiant heat absorber element that vertically extends, so that cool off.
13. as claimed in claim 11ly be used to cool off the method that scribbles semi-conductive hot glass sheet, wherein, describedly scribble semi-conductive hot glass sheet and be transported on the roller of gravity roller carrier between top radiant heat absorber element and the bottom radiant heat absorber element, and semiconductor material is upward to described top heat absorbing element with the direction of flatly extending.
14. as claimed in claim 13ly be used to cool off the method that scribbles semi-conductive hot glass sheet, wherein, describedly scribble semi-conductive hot glass sheet and cool off from top by top radiant heat absorber element, described top radiant heat absorber element have successive down towards the surface.
15. as claimed in claim 13ly be used to cool off the method that scribbles semi-conductive hot glass sheet, wherein, describedly scribble semi-conductive hot glass sheet and cool off from the bottom by bottom radiant heat absorber element, described bottom radiant heat absorber element has the part of up protruding that separates between described handling machinery roller.
16. as claimed in claim 13ly be used to cool off the method that scribbles semi-conductive hot glass sheet, wherein, describedly scribble semi-conductive hot glass sheet and cool off from top by top radiant heat absorber element, described top radiant heat absorber element have successive down towards the surface, and wherein, describedly scribble semi-conductive sheet glass and cool off from the bottom by bottom radiant heat absorber element, described bottom radiant heat absorber element has the part of up protruding that separates between described handling machinery roller.
17. as claimed in claim 11ly be used to cool off the method that scribbles semi-conductive hot glass sheet, wherein, describedly scribble semi-conductive hot glass sheet and between the radiant heat absorber element that makes by refractory materials, cool off.
18. as claimed in claim 11ly be used to cool off the method that scribbles semi-conductive hot glass sheet, wherein, describedly scribble semi-conductive hot glass sheet and between the radiant heat absorber element that makes by α attitude silicon carbide, cool off.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/020,772 US20090191031A1 (en) | 2008-01-28 | 2008-01-28 | System and method for cooling semiconductor coated hot glass sheets |
| US12/020,772 | 2008-01-28 | ||
| PCT/US2009/030072 WO2009097164A1 (en) | 2008-01-28 | 2009-01-05 | System and method for cooling semiconductor coated hot glass sheets |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101959810A true CN101959810A (en) | 2011-01-26 |
Family
ID=40899411
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009801072767A Pending CN101959810A (en) | 2008-01-28 | 2009-01-05 | Be used to cool off the system and method that scribbles semi-conductive hot glass sheet |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20090191031A1 (en) |
| EP (1) | EP2247542A4 (en) |
| CN (1) | CN101959810A (en) |
| WO (1) | WO2009097164A1 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2317545A1 (en) * | 2009-10-30 | 2011-05-04 | Applied Materials, Inc. | Substrate transport system and method |
| IT1399480B1 (en) * | 2010-03-15 | 2013-04-19 | Stral S R L | EQUIPMENT FOR DEPOSITION OF SEMICONDUCTIVE MATERIAL ON GLASS |
| FR3000502A1 (en) * | 2012-12-27 | 2014-07-04 | Commissariat Energie Atomique | Thermally treating a thin part e.g. large-sized aspheric mirrors, comprises vertically placing a thin part during the heat treatment, where the treatment is an annealing process which is carried out to slacken internal stresses in the part |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE401151A (en) * | 1933-02-27 | |||
| US1951950A (en) * | 1933-05-29 | 1934-03-20 | Corning Glass Works | Method and apparatus for cooling glass articles |
| FR1271096A (en) * | 1960-07-15 | 1961-09-08 | Tempering process for glass sheets and resulting products | |
| US3391958A (en) * | 1967-04-27 | 1968-07-09 | Pittsburgh Plate Glass Co | Glass gripping tongs with ballast |
| GB1256181A (en) * | 1969-02-14 | 1971-12-08 | Triplex Safety Glass Co | Improvements in or relating to tongs for suspending glass sheets |
| US4159842A (en) * | 1975-03-10 | 1979-07-03 | Ppg Industries, Inc. | Supporting glass sheets |
| FR2488423A1 (en) * | 1980-08-06 | 1982-02-12 | Saint Gobain Vitrage | METHOD AND DEVICE FOR REGULATING THE TEMPERATURE OF A GLASS SHEET IN A MULTI-CELL OVEN |
| US4545327A (en) * | 1982-08-27 | 1985-10-08 | Anicon, Inc. | Chemical vapor deposition apparatus |
| US4593644A (en) * | 1983-10-26 | 1986-06-10 | Rca Corporation | Continuous in-line deposition system |
| US5016562A (en) * | 1988-04-27 | 1991-05-21 | Glasstech Solar, Inc. | Modular continuous vapor deposition system |
| JP2948842B2 (en) * | 1989-11-24 | 1999-09-13 | 日本真空技術株式会社 | In-line type CVD equipment |
| US5248349A (en) * | 1992-05-12 | 1993-09-28 | Solar Cells, Inc. | Process for making photovoltaic devices and resultant product |
| US5607009A (en) * | 1993-01-28 | 1997-03-04 | Applied Materials, Inc. | Method of heating and cooling large area substrates and apparatus therefor |
| US6013134A (en) * | 1998-02-18 | 2000-01-11 | International Business Machines Corporation | Advance integrated chemical vapor deposition (AICVD) for semiconductor devices |
| JP4856308B2 (en) * | 2000-12-27 | 2012-01-18 | キヤノンアネルバ株式会社 | Substrate processing apparatus and via chamber |
| US7239804B2 (en) * | 2004-03-23 | 2007-07-03 | Canon Kabushiki Kaisha | Cooling device, and apparatus and method for manufacturing image display panel using cooling device |
| WO2005109486A1 (en) * | 2004-05-12 | 2005-11-17 | Viatron Technologies Inc. | System for heat treatment of semiconductor device |
| TW200737533A (en) * | 2005-12-21 | 2007-10-01 | Nat Science And Technology Dev Agency | Low-cost and high performance solar cell manufacturing machine |
| US7572334B2 (en) * | 2006-01-03 | 2009-08-11 | Applied Materials, Inc. | Apparatus for fabricating large-surface area polycrystalline silicon sheets for solar cell application |
-
2008
- 2008-01-28 US US12/020,772 patent/US20090191031A1/en not_active Abandoned
-
2009
- 2009-01-05 CN CN2009801072767A patent/CN101959810A/en active Pending
- 2009-01-05 WO PCT/US2009/030072 patent/WO2009097164A1/en active Search and Examination
- 2009-01-05 EP EP09705621A patent/EP2247542A4/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| WO2009097164A1 (en) | 2009-08-06 |
| EP2247542A1 (en) | 2010-11-10 |
| EP2247542A4 (en) | 2012-08-29 |
| US20090191031A1 (en) | 2009-07-30 |
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Application publication date: 20110126 |