CN101958320B - 半导体装置 - Google Patents
半导体装置 Download PDFInfo
- Publication number
- CN101958320B CN101958320B CN2009101399446A CN200910139944A CN101958320B CN 101958320 B CN101958320 B CN 101958320B CN 2009101399446 A CN2009101399446 A CN 2009101399446A CN 200910139944 A CN200910139944 A CN 200910139944A CN 101958320 B CN101958320 B CN 101958320B
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- Prior art keywords
- diffusion zone
- bipolar junction
- junction transistor
- parasitic bipolar
- semiconductor device
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 96
- 238000009792 diffusion process Methods 0.000 claims abstract description 178
- 230000003071 parasitic effect Effects 0.000 claims abstract description 94
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 230000004888 barrier function Effects 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 8
- 102100036285 25-hydroxyvitamin D-1 alpha hydroxylase, mitochondrial Human genes 0.000 description 16
- 101000875403 Homo sapiens 25-hydroxyvitamin D-1 alpha hydroxylase, mitochondrial Proteins 0.000 description 16
- 230000015556 catabolic process Effects 0.000 description 4
- 230000000630 rising effect Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009101399446A CN101958320B (zh) | 2009-07-15 | 2009-07-15 | 半导体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN2009101399446A CN101958320B (zh) | 2009-07-15 | 2009-07-15 | 半导体装置 |
Publications (2)
Publication Number | Publication Date |
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CN101958320A CN101958320A (zh) | 2011-01-26 |
CN101958320B true CN101958320B (zh) | 2012-06-13 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN2009101399446A Active CN101958320B (zh) | 2009-07-15 | 2009-07-15 | 半导体装置 |
Country Status (1)
Country | Link |
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CN (1) | CN101958320B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102790048B (zh) * | 2011-05-17 | 2015-03-25 | 旺宏电子股份有限公司 | 内嵌肖特基二极管的双载子接面晶体管半导体结构 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5981322A (en) * | 1997-01-29 | 1999-11-09 | Micron Technology, Inc. | Method for preventing latch-up in cmos integrated circuit devices |
US6445044B2 (en) * | 1993-08-13 | 2002-09-03 | Micron Technology, Inc. | Apparatus improving latchup immunity in a dual-polysilicon gate |
CN101060122A (zh) * | 2006-04-18 | 2007-10-24 | 三洋电机株式会社 | 半导体装置 |
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2009
- 2009-07-15 CN CN2009101399446A patent/CN101958320B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6445044B2 (en) * | 1993-08-13 | 2002-09-03 | Micron Technology, Inc. | Apparatus improving latchup immunity in a dual-polysilicon gate |
US5981322A (en) * | 1997-01-29 | 1999-11-09 | Micron Technology, Inc. | Method for preventing latch-up in cmos integrated circuit devices |
CN101060122A (zh) * | 2006-04-18 | 2007-10-24 | 三洋电机株式会社 | 半导体装置 |
Also Published As
Publication number | Publication date |
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CN101958320A (zh) | 2011-01-26 |
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GR01 | Patent grant | ||
CP03 | Change of name, title or address |
Address after: Taiwan Hsinchu County China jhubei City, Taiwan two yuan Street No. 1 10 floor 1 Patentee after: ILI TECHNOLOGY Corp. Address before: Taiwan Hsinchu County Tai Yuan Street Chinese jhubei City, No. 26 5 floor 1 Patentee before: Morning hair Polytron Technologies Inc. |
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CP03 | Change of name, title or address | ||
TR01 | Transfer of patent right |
Effective date of registration: 20170502 Address after: Taiwan Hsinchu County Tai Yuan Street Chinese jhubei City, No. 26 5 floor 1 Patentee after: Morning hair Polytron Technologies Inc. Address before: Hsinchu County, Taiwan, China Patentee before: ILI TECHNOLOGY Corp. |
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Effective date of registration: 20210207 Address after: Grand Cayman Islands Patentee after: Yili Technology (Cayman) Co.,Ltd. Address before: 1, 10th floor, No.1, Taiyuan 2nd Street, Zhubei City, Xinzhu County, Taiwan, China Patentee before: ILI TECHNOLOGY Corp. |
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TR01 | Transfer of patent right |
Effective date of registration: 20220421 Address after: Hsinchu County, Taiwan, China Patentee after: ILI TECHNOLOGY Corp. Address before: Grand Cayman, Cayman Islands Patentee before: Yili Technology (Cayman) Co.,Ltd. |
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TR01 | Transfer of patent right |