CN101958236B - Semiconductor substrate and preparation method thereof - Google Patents
Semiconductor substrate and preparation method thereof Download PDFInfo
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- CN101958236B CN101958236B CN 200910055072 CN200910055072A CN101958236B CN 101958236 B CN101958236 B CN 101958236B CN 200910055072 CN200910055072 CN 200910055072 CN 200910055072 A CN200910055072 A CN 200910055072A CN 101958236 B CN101958236 B CN 101958236B
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Abstract
The invention provides a preparation method of a semiconductor substrate, comprising the following steps: providing a lithium aluminate wafer, and depositing an AIN membrane layer on the lithium aluminate wafer by a sputtering method to obtain the semiconductor substrate. In the method, lithium aluminate crystal is taken as a substrate and then the AIN membrane layer is deposited on the substrate by the sputtering method to obtain the semiconductor substrate, wherein, due to small lattice mismatch between lithium aluminate and GaN, when the lithium aluminate crystal is taken as the GaN crystal growth substrate, a GaN epitaxial thin film can be prepared easily and high defect density caused by stress can be reduced. When the AIN membrane layer with the same crystal structure and similar lattice constant with the GaN is deposited on the lithium aluminate wafer, the problem that a GaN epitaxial wafer is easily cracked resulting from thermal expansion difference between the lithium aluminate crystal and the GaN is solved; in addition, AIN is taken as a buffer layer and can prevent volatilization of Li in the lithium aluminate substrate and protect the lithium aluminate substrate from corrosion of acidic or reducing atmosphere.
Description
Technical field
The present invention relates to semiconductor applications, be specifically related to a kind of Semiconductor substrate and preparation method thereof.
Background technology
With GaN excellent physics and chemical property such as III-IV group-III nitride (InN, GaN, AlN) and ternary thereof and the quaternary alloy of representative has that band gap is wide, the electron drift saturated velocity high, thermal conductivity is high, disruptive field intensity is high, high temperature resistant, acid-alkali-corrosive-resisting; Be important direct gap semiconductor material, huge application potential arranged at aspects such as blue light-emitting diode, laser diode, short-wavelength light sensitive detection parts and high-frequency high-power electronic devices.
Yet the GaN crystal growth is difficulty very, and the GaN growth for Thin Film mainly is to be substrate with the c surface sapphire at present, perhaps adopts hydrogenation epitaxy technology (HVPE) growing GaN self-supporting substrate on the c face.But because up to 13.6%, therefore still there is higher defect concentration in the lattice mismatch of c surface sapphire and GaN in the GaN epitaxial film, the device luminous efficiency of making can not reach gratifying degree.
Compare lithium aluminate (γ-LiAlO with Sapphire Substrate
2) crystal has remarkable advantages as the epitaxially grown backing material of GaN: at first; Because the lattice mismatch between lithium aluminate and the GaN, can be simplified the growth technique of GaN epitaxial film like this than the low one magnitude of the lattice mismatch between sapphire and the GaN and reduce the high defect concentration that is caused by stress; Secondly, on lithium aluminate (100) face, nonpolar M face GaN film can be prepared, the raising luminous efficiency can be avoided because the internal electric field that c produces to the spontaneous polarization and the piezoelectric effect of GaN heterostructure; In addition, when adopting lithium aluminate to prepare GaN self-supporting substrate, be easy to the GaN thick film on it is peeled off, obtain self-supporting GaN substrate.
But also there are some shortcomings in the lithium aluminate crystal substrate: the thermal expansion coefficient difference between lithium aluminate and the GaN is bigger on the one hand, causes the epitaxial wafer easy of crack; On the other hand, because the lithium in the lithium aluminate crystal is more active, so its thermal stability is also relatively poor, and the corrosion of non-refractory and reducibility gas in the metal organic chemical vapor deposition system causes substrate surface to be destroyed the reduction with the epitaxial film quality.
Therefore be necessary the lithium aluminate substrate is carried out some technical transformations to overcome above-mentioned shortcoming.The inventor finds: because the crystal structure between AlN and the GaN is identical, lattice constant is close, therefore can be considered as the resilient coating of lithium aluminate substrate, thereby overcome the lithium aluminate substrate exists in the prior art perishable, the volatile shortcoming of Li.
Summary of the invention
The technical problem that the present invention solves is; A kind of preparation method that can prepare Semiconductor substrate is provided; Through this method the lithium aluminate substrate is improved, with overcome that lithium aluminate substrate of the prior art exists perishable, Li is volatile and owing to lithium aluminate and GaN thermal expansion coefficient difference cause GaN problem easy to crack.The present invention also provides a kind of Semiconductor substrate, overcomes the shortcoming of the lithium aluminate substrate of said prior art.
In order to solve the problems of the technologies described above, the present invention provides a kind of preparation method of Semiconductor substrate, comprising:
Lithium aluminate crystal wafer is provided;
Use sputtering method depositing Al N rete on said lithium aluminate crystal wafer to obtain Semiconductor substrate.
Preferably, said use sputtering method depositing Al N rete on said lithium aluminate crystal wafer is specially:
Said lithium aluminate crystal wafer is placed in the sputtering chamber, sputtering chamber is vacuumized;
The heating lithium aluminate crystal wafer is incubated, with Ar and N
2As sputter gas, with Al or AlN as target sputtering sedimentation AlN rete on lithium aluminate crystal wafer.
Preferably, said heating lithium aluminate crystal wafer is incubated and is specially:
Said lithium aluminate crystal wafer is heated to 400 ℃ or higher temperature to be incubated.
Preferably, sputtering chamber is evacuated to vacuum degree and is higher than 10
-3Pa.
Preferably, N in the said sputter gas
2Volumn concentration be 25% or higher.
Preferably, the sputtering power during sputtering sedimentation AlN rete is 200W-500W on lithium aluminate crystal wafer.
Preferably, the sputtering time during sputtering sedimentation AlN rete is 20 minutes-60 minutes on lithium aluminate crystal wafer.
Preferably, said lithium aluminate crystal wafer is the lithium aluminate crystal wafer of (100) crystal face.
The present invention also provides a kind of Semiconductor substrate, comprises lithium aluminate crystal wafer and is deposited on the AlN rete on the said lithium aluminate crystal wafer.
Preferably, said lithium aluminate crystal wafer is the lithium aluminate crystal wafer of (100) crystal face.
The invention provides a kind of preparation method of Semiconductor substrate.The present invention as substrate, obtains Semiconductor substrate with sputtering method depositing Al N rete in the above with lithium aluminate crystal wafer then.Compared with prior art, because AlN has identical crystal structure, close lattice constant with GaN, so during as the resilient coating of substrate, lattice match preferably can be provided for the nucleating growth of GaN.In addition, the AlN rete on the said Semiconductor substrate can also stop the volatilization of the Li in the lithium aluminate substrate, the corrosion of protection lithium aluminate substrate acid and alkali property or corrosion resistance atmosphere.According to method provided by the invention, can be at a lower temperature on the lithium aluminate crystal substrate sputter Al rete form Semiconductor substrate.
Description of drawings
Fig. 1 is the X-ray diffractogram of the Semiconductor substrate of the embodiment of the invention 1 preparation;
Fig. 2 is the X-ray diffractogram of the Semiconductor substrate of the embodiment of the invention 5 preparations.
Embodiment
The embodiment of a preparation Semiconductor substrate of the present invention comprises:
Lithium aluminate crystal wafer is provided;
Use sputtering method depositing Al N rete on said lithium aluminate crystal wafer to obtain Semiconductor substrate.
According to the present invention, use the substrate of lithium aluminate crystal wafer as Semiconductor substrate, lithium aluminate crystal wafer need pass through polishing, and for the surface roughness of lithium aluminate crystal wafer, preferred r.m.s. roughness is more preferably less than 8 dusts less than 10 dusts, is more preferably less than 5 dusts.For the finishing method of lithium aluminate crystal wafer, the present invention does not have special restriction.According to the present invention, the lithium aluminate crystal wafer of preferred (100) crystal face is as the base material of Semiconductor substrate.
According to the present invention, use sputtering method depositing Al N rete on said lithium aluminate crystal wafer.For sputtering method, be preferably magnetron sputtering method well known to those skilled in the art, like direct current magnetron sputtering process or radio-frequency magnetron sputter method.Use magnetron sputtering method on lithium aluminate crystal wafer, during depositing Al N rete, earlier lithium aluminate crystal wafer to be placed in the sputtering chamber of magnetic control sputtering system, then said sputtering chamber is vacuumized, preferred, said sputtering chamber is pumped down to vacuum degree and is higher than 1 * 10
-3Pa more preferably is higher than 5 * 10
-4Pa more preferably is higher than 1 * 10
-4Pa.
After sputtering chamber is vacuumized; The heating lithium aluminate crystal wafer is incubated then; For the heating-up temperature of lithium aluminate crystal wafer, be preferably 400 ℃ or higher temperature, more preferably lithium aluminate crystal wafer is heated to 450 ℃ or higher temperature; More preferably be heated to 500 ℃-700 ℃, more preferably lithium aluminate crystal wafer be heated to 550 ℃-650 ℃.
For sputter gas, be preferably Ar and N
2, N wherein
2Volumn concentration in sputter gas is preferably greater than 25%, more preferably 30%-50%.The flow of sputter gas is preferably 10～20sccm (standard state ml/min).During sputter, preferably with metal A l or AlN pottery as sputtering target material, the purity for metal A l is preferably greater than 99.99wt%, the purity for the AlN pottery is preferably greater than 99.99wt%.For sputtering power, be preferably 200W-500W, more preferably 300W-400W.Sputtering time was preferably 20 minutes-60 minutes minutes, more preferably 30 minutes-45 minutes.
Thickness for the AlN rete is preferably 100nm-1000nm, more preferably 300nm-700nm, more preferably 400nm-600nm.During sputter finishes, the lithium aluminate crystal wafer that deposits the AlN rete is cooled to room temperature takes out in sputtering chamber.
The present invention also provides a kind of Semiconductor substrate, comprises lithium aluminate crystal wafer and is deposited on the AlN rete on the lithium aluminate crystal wafer.Wherein, said lithium aluminate crystal wafer is preferably the lithium aluminate crystal wafer of (100) crystal face.
The present invention with lithium aluminate crystal as substrate; Adopt sputtering method depositing Al N rete to process Semiconductor substrate then in the above; Because the lattice mismatch of lithium aluminate substrate and GaN is little; During as the substrate of GaN crystal growth, be easy to prepare the GaN epitaxial film, and reduce the high defect concentration that causes by stress.When on lithium aluminate crystal wafer, depositing the AlN rete identical with the GaN crystal structure, that lattice constant is close, can solve the problem of the GaN epitaxial wafer cracking that causes owing to the thermal dilation difference between lithium aluminate crystal and the GaN.And AlN can also stop the volatilization of Li in the lithium aluminate substrate as resilient coating, and protects the corrosion of lithium aluminate substrate acid and alkali property or reducing atmosphere.The present invention adopts sputtering method that AlN deposition is obtained on the lithium aluminate crystal wafer, can be under lower temperature on lithium aluminate crystal wafer the growing AIN rete.The XRD test result shows, according to method provided by the invention, can on lithium aluminate crystal wafer, prepare (0001) aluminium nitride film of high C-axis preferred orientation.
In order further to understand the present invention, the preparation method of Semiconductor substrate provided by the invention is described below in conjunction with embodiment.
Embodiment 1
With the surperficial r.m.s. roughness after the polishing is that the lithium aluminate crystal wafer of 5 dusts (100) face places in the sputtering chamber of observing and controlling sputtering system, with being evacuated to 2.0 * 10 in the sputtering chamber
-4Pa; Be incubated behind the heating lithium aluminate crystal wafer to 400 ℃, with Ar and the N that flows
2As sputter gas, the flow of sputter gas is about 15sccm, Ar and N
2Volume ratio be 3: 1.
The AlN pottery that with purity is 99.99wt% adopts radio frequency sputtering as target, and sputtering power is 200W, and sputtering time is 20 minutes, and the lithium aluminate crystal wafer that will deposit AlN after sputter finishes is cooled to room temperature and takes out in sputtering chamber.Semiconductor substrate is carried out the XRD test; Test result is as shown in Figure 1; The diffraction maximum that is positioned at 34.70 °, 35.86 °, 73.19 ° among the figure corresponds respectively to (200) crystal face of lithium aluminate, (0002) crystal face of AlN and (400) crystal face of lithium aluminate; This shows, on lithium aluminate crystal, generated (0001) aluminium nitride film of high C-axis preferred orientation.
Embodiment 2-4
These three embodiment are adjusted into 300W, 400W, 500W respectively with the radio frequency sputtering power among the embodiment 1, and sputtering time was respectively 20 minutes, 30 minutes, 40 minutes, and other is identical with embodiment 1.
These three embodiment have also generated (0001) aluminium nitride film of high C-axis preferred orientation on the lithium aluminate crystal wafer of (100) face.
With the surperficial r.m.s. roughness after the polishing is that the lithium aluminate crystal wafer of 5 dusts (100) face places in the sputtering chamber of observing and controlling sputtering system, with being evacuated to 2.0 * 10 in the sputtering chamber
-4Pa; Be incubated behind the heating lithium aluminate crystal wafer to 600 ℃, with Ar and the N that flows
2As sputter gas, the flow of sputter gas is about 15sccm, Ar and N
2Volume ratio be 1: 1.
The Al that with purity is 99.99wt% adopts direct current sputtering as target, and sputtering power is 200W, and sputtering time is 20 minutes, and the lithium aluminate crystal wafer that will deposit AlN after sputter finishes is cooled to room temperature and takes out in sputtering chamber.Semiconductor substrate is carried out the XRD test; Test result is as shown in Figure 2; The diffraction maximum that is positioned at 34.67 °, 36.08 °, 73.16 ° among the figure corresponds respectively to (200) crystal face of lithium aluminate, (0002) crystal face of AlN and (400) crystal face of lithium aluminate; This shows, on lithium aluminate crystal, generated (0001) aluminium nitride film of high C-axis preferred orientation.
Embodiment 6-8
These three embodiment are adjusted into 300W, 400W, 500W respectively with the direct current sputtering power among the embodiment 5, and sputtering time was respectively 20 minutes, 30 minutes, 40 minutes, and other is identical with embodiment 5.
These three embodiment have also generated (0001) aluminium nitride film of high C-axis preferred orientation on the lithium aluminate crystal wafer of (100) face.
More than a kind of Semiconductor substrate provided by the invention and preparation method thereof has been carried out detailed introduction, gone detailed introduction.Used concrete example among this paper principle of the present invention and execution mode are set forth, the explanation of above embodiment just is used for helping to understand method of the present invention and core concept thereof.Should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the principle of the invention, can also carry out some improvement and modification to the present invention, these improvement and modification also fall in the protection range of claim of the present invention.
Claims (3)
1. the preparation method of a Semiconductor substrate comprises:
Lithium aluminate crystal wafer is provided;
Said lithium aluminate crystal wafer is placed in the sputtering chamber, sputtering chamber is evacuated to vacuum degree is higher than 10
-3Pa;
Said lithium aluminate crystal wafer is heated to 400 ℃ or higher temperature is incubated, with Ar and N
2As sputter gas; With Al or AlN as target sputtering sedimentation AlN rete on lithium aluminate crystal wafer; Obtain Semiconductor substrate; Sputtering power on lithium aluminate crystal wafer during sputtering sedimentation AlN rete is 200W-500W, and the sputtering time on lithium aluminate crystal wafer during sputtering sedimentation AlN rete is 20 minutes-60 minutes.
2. preparation method according to claim 1 is characterized in that, N in the said sputter gas
2Volumn concentration be 25% or higher.
3. preparation method according to claim 1 is characterized in that, said lithium aluminate crystal wafer is the lithium aluminate crystal wafer of (100) crystal face.
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| CN 200910055072 CN101958236B (en) | 2009-07-20 | 2009-07-20 | Semiconductor substrate and preparation method thereof |
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|---|---|---|---|
| CN 200910055072 CN101958236B (en) | 2009-07-20 | 2009-07-20 | Semiconductor substrate and preparation method thereof |
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|---|---|
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| CN101958236B true CN101958236B (en) | 2012-12-19 |
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| CN103996756B (en) * | 2014-05-30 | 2017-01-18 | 广州市众拓光电科技有限公司 | Film coating method and application thereof |
| US11767612B2 (en) * | 2017-09-22 | 2023-09-26 | Tokuyama Corporation | Group III nitride single crystal substrate |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004053965A1 (en) * | 2001-06-04 | 2004-06-24 | Cbl Technologies, Inc | Free standing substrates by laser-induced decoherency and regrowth |
| CN1894446A (en) * | 2003-11-13 | 2007-01-10 | 克利公司 | Large area, uniformly low dislocation density GaN substrate and process for making the same |
| CN101235540A (en) * | 2007-11-09 | 2008-08-06 | 中国科学院上海光学精密机械研究所 | Method for preparing aluminum nitride film on surface of lithium aluminate wafer at low temperature |
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2009
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004053965A1 (en) * | 2001-06-04 | 2004-06-24 | Cbl Technologies, Inc | Free standing substrates by laser-induced decoherency and regrowth |
| CN1894446A (en) * | 2003-11-13 | 2007-01-10 | 克利公司 | Large area, uniformly low dislocation density GaN substrate and process for making the same |
| CN101235540A (en) * | 2007-11-09 | 2008-08-06 | 中国科学院上海光学精密机械研究所 | Method for preparing aluminum nitride film on surface of lithium aluminate wafer at low temperature |
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