CN101958225B - Quartz changed board cleaning method - Google Patents
Quartz changed board cleaning method Download PDFInfo
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- CN101958225B CN101958225B CN2009100548000A CN200910054800A CN101958225B CN 101958225 B CN101958225 B CN 101958225B CN 2009100548000 A CN2009100548000 A CN 2009100548000A CN 200910054800 A CN200910054800 A CN 200910054800A CN 101958225 B CN101958225 B CN 101958225B
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- quartz
- plate
- changed
- carry out
- changed plate
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- Cleaning Or Drying Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention discloses a quartz changed board cleaning method. After dry etching stops, the method comprises: disassembling the quartz changed board from a dry etching device, and baking the quartz changed board. The method can thoroughly remove polymer on the quartz changed board.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly a kind of quartz changes the plate cleaning method.
Background technology
Along with the extensive use of electronic equipment, semi-conductive manufacturing process has obtained development at full speed, and semi-conductive manufacturing process relates to two kinds of basic etching technics: dry etching and wet etching.Wherein, dry etching is to be exposed to wafer in the plasma that etching gas produces, plasma and wafer generation physics or chemical reaction, thus remove unwanted material from crystal column surface selectively.
Fig. 1 is the sectional structure chart of dry etching device in the prior art.As shown in Figure 1; On inductance coil 102, apply the conversion coupled power through conversion coupled power generator 101; Thereby around inductance coil 102, generate an electromagnetic field, etching gas is passed into the upper chamber 104 from air inlet 103 then, and etching gas ionization takes place under the effect of electromagnetic field and forms plasma; Quartz changes plate 105 keeps apart inductance coil 102 with the wafer W that is positioned on the electrostatic chuck 106, and quartz to change plate 105 be dismountable.Because quartz changes plate 105 and has insulating properties, so just can weaken the influence of electromagnetic field to wafer W.Quartz changes plate 105 and also comprises several circular holes; Be used for making the ionization base of plasma to get into lower cavity 107; Simultaneously; On wafer W, apply bias power through bias power generator 108, so just make to have a bigger voltage difference between wafer W and the plasma, have directivity thereby make towards the ionization base of wafer W motion.
Yet, in practical application, when wafer is carried out etching; Metal level on plasma and the wafer or dielectric layer generation chemical reaction, the polymer that reaction generates can be deposited on quartz gradually and change on the plate, along with the carrying out of etching; Increasing polymer deposition changes on the plate at quartz, because the effect of gravity, polymer is easy to drop to just on the wafer of etching; This just need change plate to quartz and carry out cleaning regularly, changes the polymer on the plate to remove quartz.
In the prior art; Generally quartz being changed the method that plate cleans is: quartz is changed plate from dry etching device, disassemble; Using acid solution that quartz is changed plate cleans; Use deionized water (DIW) that quartz is changed plate then and carry out spray Cleaning for High Capacity,, use flowing nitrogen (N at last to remove reaction product
2) quartz after cleaning is changed plate carry out drying.
Yet; In practical application; Because acid solution can change plate to quartz corrosiveness is arranged, thus require the concentration of acid solution can not be excessive, but the less acid solution of working concentration can't make polymer and acid solution react fully again; Therefore adopt in the prior art quartz to be changed the method that plate cleans often can not to reach better cleaning effect, be deposited on the polymer that quartz changes on the plate and still can not be removed up hill and dale.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of quartz to change the plate cleaning method, can remove quartz up hill and dale and change the polymer on the plate.
For achieving the above object, technical scheme of the present invention specifically is achieved in that
A kind of quartz changes the plate cleaning method, and after dry etching stopped, this method comprised: quartz is changed plate from dry etching device, disassemble, quartz is changed plate cure.
Said method of curing is: quartz is changed plate is positioned in the baking box, and in baking box bubbling air; Or, use resistance wire that quartz is changed plate and cure.
This method further comprises: after quartz is changed plate and cures, quartz is changed plate carry out spray Cleaning for High Capacity.The method of said spray Cleaning for High Capacity is: adopt deionized water DIW that quartz is changed plate and carry out spray Cleaning for High Capacity.
This method further comprises: after quartz is changed plate and carries out spray Cleaning for High Capacity, quartz is changed plate carry out drying.
The method of said drying is: adopt flowing nitrogen N2 or argon Ar that quartz is changed plate and carry out drying.
Said method of curing is: whenever raise 50 ℃ to 100 ℃ at a distance from one hour stoving temperature, when stoving temperature reaches 1000 ℃, stop to cure.
This method further comprises: after quartz is changed plate and cures, quartz is changed plate carry out spray Cleaning for High Capacity.
The method of said spray Cleaning for High Capacity is: adopt deionized water DIW that quartz is changed plate and carry out spray Cleaning for High Capacity.
This method further comprises: after quartz is changed plate and carries out spray Cleaning for High Capacity, quartz is changed plate carry out drying.
The method of said drying is: adopt flowing nitrogen N
2Or argon Ar changes plate to quartz and carries out drying.
It is thus clear that, in method provided by the present invention, adopt quartz to be changed method that plate cures will to be deposited on the polymer that quartz changes the plate surface and to get rid of, when quartz being changed plate cure, Si in the polymer and AlCl
3All can with airborne O
2Biochemical reaction, product are respectively easy cleaned SiO
2And Al
2O
3, like this, just can the polymer that quartz changes on the plate be removed up hill and dale.
Description of drawings
Fig. 1 is the sectional structure chart of dry etching device in the prior art.
Fig. 2 changes the flow chart of plate cleaning method for quartz provided by the present invention.
Embodiment
For making the object of the invention, technical scheme and advantage clearer, below with reference to the accompanying drawing embodiment that develops simultaneously, to further explain of the present invention.
Fig. 2 is the flow chart that quartz provided by the present invention changes the plate cleaning method, and this method may further comprise the steps:
In this step, after dry etching stopped, quartz is changed the purpose that plate cures be: the main component of polymer was silicon (Si) and aluminium chloride (AlCl
3), when quartz being changed plate cure, Si in the polymer and AlCl
3All can with airborne oxygen (O
2) chemical reaction takes place, product is respectively silicon dioxide (SiO
2) and aluminium oxide (Al
2O
3), and SiO
2Be crystalline solid, Al
2O
3Be flock, that is to say that these two kinds of product all are easy cleaned, therefore, so just can the polymer that quartz changes on the plate be removed up hill and dale.
The implementation method of curing can adopt method of the prior art, for example, can quartz be changed plate and be positioned in the baking box, and in baking box bubbling air, also can use resistance wire that quartz is changed plate and cure.
Need to prove that when quartz being changed plate cure, the temperature that should avoid curing raises suddenly; Otherwise; Might cause that quartz changes the distortion of plate, even break, therefore; The present invention also can provide a kind of quartz is changed the method that plate cures: whenever raise 50 ℃ to 100 ℃ at a distance from one hour stoving temperature, when stoving temperature reaches 1000 ℃, stop to cure.
Because in step 201, quartz being changed plate cures Si in the polymer and AlCl
3With airborne O
2Chemical reaction takes place, and product is respectively the SiO of crystalline solid
2Al with flock
2O
3, therefore, in this step, can adopt DIW that quartz is changed plate and carry out spray Cleaning for High Capacity, thereby being changed the plate surface clean from quartz, product falls.
When quartz being changed plate and carry out drying, can adopt mobile N
2Or other inert gases, for example argon Ar.
It is thus clear that, in the present invention, adopt quartz to be changed method that plate cures will to be deposited on the polymer that quartz changes the plate surface and to get rid of, when quartz being changed plate cure, Si in the polymer and AlCl
3All can with airborne O
2Biochemical reaction, product are respectively easy cleaned SiO
2And Al
2O
3, like this, just can the polymer that quartz changes on the plate be removed up hill and dale.
The above is merely preferred embodiment of the present invention, is not to be used to limit protection scope of the present invention.All within spirit of the present invention and principle, any modification of being done, be equal to replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (6)
1. a quartz changes the plate cleaning method; After dry etching stopped, this method comprised: quartz is changed plate from dry etching device, disassemble, quartz is changed plate cure; Said method of curing is: quartz is changed plate is positioned in the baking box, and in baking box bubbling air; Or, use resistance wire that quartz is changed plate and cure;
Quartz is changed plate carry out spray Cleaning for High Capacity;
Quartz is changed plate carry out drying.
2. method according to claim 1 is characterized in that, the method for said cleaning is: adopt deionized water DIW that quartz is changed plate and carry out spray Cleaning for High Capacity.
3. method according to claim 1 is characterized in that, the method for said drying is: adopt flowing nitrogen N2 or argon Ar that quartz is changed plate and carry out drying.
4. method according to claim 1 is characterized in that, said method of curing is: whenever raise 50 ℃ to 100 ℃ at a distance from one hour stoving temperature, when stoving temperature reaches 1000 ℃, stop to cure.
5. method according to claim 4 is characterized in that, the method for said cleaning is: adopt deionized water DIW that quartz is changed plate and carry out spray Cleaning for High Capacity.
6. method according to claim 4 is characterized in that, the method for said drying is: adopt flowing nitrogen N2 or argon Ar that quartz is changed plate and carry out drying.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100548000A CN101958225B (en) | 2009-07-14 | 2009-07-14 | Quartz changed board cleaning method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100548000A CN101958225B (en) | 2009-07-14 | 2009-07-14 | Quartz changed board cleaning method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101958225A CN101958225A (en) | 2011-01-26 |
| CN101958225B true CN101958225B (en) | 2012-07-25 |
Family
ID=43485491
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009100548000A Expired - Fee Related CN101958225B (en) | 2009-07-14 | 2009-07-14 | Quartz changed board cleaning method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101958225B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1809513A (en) * | 2003-05-30 | 2006-07-26 | 兰姆研究公司 | Methods of finishing quartz glass surfaces and components made by the methods |
| CN101126053A (en) * | 2006-08-17 | 2008-02-20 | 安集微电子（上海）有限公司 | Cleaning liquid composition for plasma etching residues in semi-conductor industry |
-
2009
- 2009-07-14 CN CN2009100548000A patent/CN101958225B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1809513A (en) * | 2003-05-30 | 2006-07-26 | 兰姆研究公司 | Methods of finishing quartz glass surfaces and components made by the methods |
| CN101126053A (en) * | 2006-08-17 | 2008-02-20 | 安集微电子（上海）有限公司 | Cleaning liquid composition for plasma etching residues in semi-conductor industry |
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| Publication number | Publication date |
|---|---|
| CN101958225A (en) | 2011-01-26 |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120725 Termination date: 20200714 |