TW201712752A - Method for collapse-free drying of high aspect ratio structures - Google Patents

Abstract

A method for drying a substrate including a plurality of high aspect ratio (HAR) structures includes, after at least one of (i) wet etching, and (ii) wet cleaning, and (iii) wet rinsing the substrate using at least one of (a) wet etching solution, and (b) wet cleaning solution, and (c) wet rinsing solution, respectively, and without drying the substrate: depositing, between the plurality of HAR structures, a solution that includes a polymer component, a nanoparticle component, and a solvent; wherein as the solvent evaporates, a sacrificial bracing material precipitates out of solution and at least partially fills the plurality of HAR structures, the sacrificial bracing material including (i) polymer material from the polymer component of the solution and (ii) nanoparticle material from the nanoparticle component of the solution; and exposing the substrate to plasma generated using a plasma gas chemistry to volatilize the sacrificial bracing material.

Description

Drying method for high aspect ratio structure without causing collapse

[Reciprocal Reference to Related Applications] This is a continuation of the U.S. Patent Application Serial No. 14/507,080, filed on Oct. 6, 2014. The aforementioned application is hereby incorporated by reference in its entirety.

The present disclosure relates to systems and methods for processing substrates, and more particularly to systems and methods for drying a high aspect ratio (HAR) structure without collapse.

The background description provided herein is for the purpose of illustration of the disclosure. Within the scope described in this "Prior Art" paragraph, the results of the inventors currently listed, and the manner in which they may not be otherwise identified as prior art descriptions at the time of application, are not expressly or impliedly It is recognized as a prior art with respect to the disclosure.

Fabrication of substrates such as semiconductor wafers typically requires multiple processing steps, which may include material deposition, planarization, feature patterning, feature etching, and/or feature cleaning. These processing steps are typically repeated one or more times during the processing of the substrate.

As semiconductor devices continue to shrink to smaller feature sizes, high aspect ratio (HAR) structures are increasingly needed to achieve desired device performance goals. The use of HAR structures can present several substrate processing steps.

For example, wet processes (such as etching and cleaning) can cause problems with the HAR structure due to the capillary forces generated during drying of the substrate. The strength of the capillary force depends on the contact angle, surface tension, feature spacing, and/or aspect ratio of the structure of the etching, cleaning, or rinsing fluid that is undergoing drying. If the capillary force generated during drying is too high, the HAR structure will become distorted or collapsed on each other, and a stiction may occur, which seriously degrades the device yield.

To avoid collapse and viscous effects, one method uses a rinse liquid having a surface tension lower than that of deionized water to avoid structural collapse. Although this method is generally effective for relatively low aspect ratio structures, this method still faces the same problems of collapse and viscous effects as when using deionized water. The rinsing fluid still has a limited amount of surface tension that can create stress during drying, which is still too strong for fragile HAR structures.

Another method for drying the HAR structure involves dissolving and flushing the flushing fluid with a supercritical fluid. Supercritical fluids have no surface tension if handled properly. However, when using supercritical fluids, several technical and production challenges arise. These challenges include high equipment and safety costs, long process times, solvent characteristics that are subject to change during the process, extreme sensitivity due to fluid diffusion and tunable properties, and interaction of components from the supercritical fluid with the processing chamber. The resulting wafer defect and contamination problems.

Another strategy for avoiding HAR structure collapse is to incorporate a permanent mechanical support structure of the support structure. There are several trade-offs for this approach, including higher costs and process complexity that have a negative impact on capacity and yield. Furthermore, permanent mechanical support structures are limited to supporting a particular type of HAR structure.

Freeze drying has also been proposed as a method of drying the HAR structure. Freeze-drying eliminates the collapse by initially freezing the solvent and then sublimating it directly under vacuum. Freeze drying avoids the liquid/air interface, which minimizes capillary forces. Although freeze drying shows good prospects, freeze drying has relatively high cost, low throughput, and high defects compared to competitive methods.

Surface modification of the sidewalls of the HAR structure can also be performed. In this method, small molecules can be chemically bonded to the sidewalls of the HAR structure. These small molecules improve the performance of the collapse by avoiding the viscous effect of the material when it contacts or by changing the contact angle of the wet chemical to minimize the Laplace pressure. Surface modification does not completely eliminate the drying stress, and the structure may be deformed during the drying process, which may cause damage. Furthermore, when the surface material is altered, new specific molecules are required to bind to the sidewalls of the HAR structure.

In one feature, a method of drying a substrate comprising a plurality of high aspect ratio (HAR) structures is described. The method comprises the steps of: (i) wet etching, (i) wet etching, using at least one of (a) a wet etching solution, (b) a wet cleaning solution, and (c) a wet rinsing solution, respectively ( Ii) after at least one of wet cleaning, and (iii) wet rinsing, and without drying the substrate: depositing a solution between the plurality of HAR structures, the deposition solution comprising a polymer component, a rice particle component, and a solvent; wherein when the solvent is volatilized, the sacrificial support material is precipitated from the solution and at least partially fills the plurality of HAR structures, and the sacrificial support material comprises: (i) a polymer material, the solution from the solution a polymer component; and (ii) a nanoparticulate material, the nanoparticle component from the solution; and exposing the substrate to a plasma generated using plasma gas chemistry to volatilize the sacrificial support material.

In one feature, a system for drying a substrate comprising a plurality of high aspect ratio (HAR) structures is described. The system comprises: a processing chamber; a substrate support disposed in the processing chamber; a gas delivery system for delivering a gas mixture to the processing chamber; and a fluid delivery system configured to deliver the solution to the substrate a plasma generator configured to generate plasma in the processing chamber; a controller in communication with the fluid delivery system, the gas delivery system, and the plasma generator. The controller is configured to: (i) wet the substrate using at least one of (a) a wet etching solution, (b) a wet cleaning solution, or (c) a wet rinsing solution, respectively After at least one of etching, (ii) wet cleaning, or (iii) wet rinsing, and without drying the substrate: depositing a solution between the plurality of HAR structures, the solution comprising a polymer component a nanoparticle component, and a solvent; and exposing the substrate to a plasma generated using plasma gas chemistry to volatilize the sacrificial support material. When the solvent evaporates, the sacrificial support material is precipitated from the solution and at least partially fills the plurality of HAR structures, and the sacrificial support material comprises: (i) a polymer material, the polymer component from the solution; and (ii) a nanoparticulate material, the composition of the nanoparticle from the solution.

Further scope of applicability of the present disclosure will be apparent from the embodiments, claims, and drawings. The embodiments and the specific examples are intended to be illustrative only and are not intended to limit the scope of the disclosure.

Some sacrificial support methods have been used to avoid the collapse of high aspect ratio (HAR) structures. By way of example, the application of the sacrificial support method is disclosed in the co-pending U.S. Patent Application Serial No. 13/924,314, the entire disclosure of which is incorporated herein by reference. This application is incorporated herein in its entirety for reference. As described in this application, a sacrificial support material (eg, a glassy polymer or a fullerene solution) is deposited directly onto the HAR after a cleaning or wet etching process, but before the wafer is dried. In the structure.

When the solvent evaporates, the sacrificial support material is precipitated from the solution and the structure is filled. Mechanical support is formed between the HAR structures to counteract the capillary forces generated during solvent evaporation. Thereafter, the sacrificial support material is removed in a dry plasma process. The plasma process may use a reactant such as N ₂ , O ₂ , H ₂ , and/or O ₃ gas. HAR as used in this specification means a HAR structure of AR > 8:1, 10:1, 15:1, 20:1, or 50:1. In HAR applications, the distance between adjacent structures is less than 40 nanometers (nm), less than 30 nm, or less than 20 nm.

Certain sacrificial support materials, such as certain polymeric types of sacrificial support materials, may undergo a glass transition to form a melt during the removal of the sacrificial support material. The melt behaves like a liquid and may cause HAR structure collapse during the removal of the sacrificial support material.

According to the present disclosure, the sacrificial support material includes a nanoparticulate material (such as fullerol) and a polymer. The nanoparticulate material increases the glass transition temperature of the sacrificial support material above the glass transition temperature of the polymer. Higher glass transition temperatures allow for higher ashing temperatures, resulting in faster plasma removal rates for sacrificial support materials, shorter process times and increased throughput. The relative amounts of nanoparticulate material and polymer used may also be selected to reduce surface tension and/or increase flow to increase gap filling between the HAR structures.

Referring now to Figure 1, a method 100 for drying a substrate comprising a plurality of HAR structures is shown. At 122, the substrate comprising the plurality of HAR structures is wet etched or cleaned using the desired etching solution (e.g., acid) and/or cleaning solution. After wet etching or cleaning, the substrate is not dried and a wet etch or cleaning solution remains on the substrate.

In some examples, the HAR structure is a line/space, STI, FinFETs, or cylindrical capacitor. The material can comprise a metal, semiconductor or dielectric material. In some examples, the etching and cleaning process is performed within a spin coating process chamber.

At 123, a rinsing solution can be used to replace the wet etch or cleaning solution. After rinsing, the substrate is not dried and the rinsing solution remains on the substrate.

At 124, a selective transition solvent can be used to replace the rinse solution. The transition solvent can be used depending on the chemical composition and compatibility of the rinsing solution and the solvent used to dissolve the support material.

At 126, the rinse solution or selective transition solvent is replaced with a solvent comprising a sacrificial support material. In some examples, the sacrificial support material comprises one or more polymers, and nanoparticle additives. A surfactant may also be included. It is envisioned that the substrate remains wet during steps 122, 123, 124, and 126. In some examples, the sacrificial support material comprises a carbonaceous material that can be volatilized using plasma chemistry.

At 130, excess solvent can be selectively spun off. Sacrificial and mechanical support fills the complex HAR structure on the substrate. More specifically, when the solvent evaporates, the sacrificial support material is precipitated from the solution and fills the structure. Mechanical support is formed between the HAR structures to counteract the capillary forces generated during solvent drying. At 132, the substrate can be selectively annealed or baked to, for example, crosslink, remove residual solvent, and/or release stress. The substrate can be transferred to the plasma processing chamber, or if a combined spin coating and plasma processing chamber is used, the processing can be continued without transfer.

In some examples, the substrate support or platform heats the substrate to a temperature between 25 ^o C and 400 ^o C during plasma exposure. At 134, the substrate is exposed to a plasma gas chemical. For example, the substrate can be exposed to a hydrogen-rich plasma gas chemical. The hydrogen-rich gas can be mixed with other gases to improve the residue or etch rate without modifying the surface of the HAR structure. In some examples, the additional gas may comprise a mild oxidant or an inert gas. Examples of mild oxidants include carbon dioxide, carbon monoxide, nitrogen monoxide, nitrous oxide, nitrogen dioxide, sulfur oxides, sulfur dioxide, water, and oxygenated hydrocarbons. In some examples, the mixture contains less than 10% CO ₂ . An inert gas may also be added, including nitrogen, argon, helium, neon, xenon, and krypton. In some examples, it can be used enriched with H ₂ molecule (such as methane (CH ₄₎ or ammonia (NH _3)). The H-rich or enriched in H ₂ molecules may be used alone, or in combination with an inert gas and / or a mild oxidizing agent. While providing an example of a hydrogen-rich plasma gas chemical, other suitable plasma gas chemicals can be used, such as oxygen-rich plasma gas chemicals and/or ozone.

At 138, the plasma is ignited in the processing chamber and the substrate is exposed to the plasma to remove the sacrificial support material. In some examples, the plasma is a remote or downstream plasma. In some examples, the process conditions include plasma generated using 500 W-10 kW of RF power, a vacuum pressure of 0.1 Torr to 3 Torr, and a total gas flow of 500-10,000 sccms, although other process conditions can be used. At 140, a selective substrate RF bias can be used.

At 142, the substrate is removed from the plasma processing chamber after removal of the sacrificial support material.

Referring now to Figures 2A-2D, an example of a substrate 200 that uses sacrificial support during drying is illustrated. In FIG. 2A, substrate 200 includes a plurality of HAR structures 204 that extend upwardly from lower substrate layer 212. For example, the plurality of HAR structures 204 can include one or more pillars 216, or other structures (eg, lines/spacers, capacitors, etc.) that extend upwardly from the lower substrate layer 212, although other HAR structures can also be considered.

Fluid 224 remains on substrate 200 after wet etching or wet cleaning. By way of example only, fluid 224 may fill gap 220 between cylindrical bodies 216. In FIG. 2B, a selective transition solvent 238 can be used to displace fluid 224. In FIG. 2C, a solvent 240 comprising a sacrificial support material can be used to displace fluid 224 or a selective transition solvent 238, if used. In FIG. 2D, a plasma can be used to remove the sacrificial support material (shown partially removed at 241) without damaging the plurality of HAR structures 204.

3A and 3B, an example of a processing chamber for drying a substrate having a plurality of HAR structures is shown. In FIG. 3A, wet etching, cleaning, and/or rinsing can be performed within the spin coating process chamber 300. Further, in the spin coating process chamber 300, a solvent having a sacrificial support material (or a transition solvent and a solvent having a sacrificial support material) may be coated on the substrate. The substrate can then be transferred to a plasma processing chamber 304 for plasma processing to remove the sacrificial support material without damaging the plurality of HAR structures.

In Figure 3B, a combined spin coating and plasma processing chamber 310 is shown. Wet etching, cleaning, and/or rinsing can be performed using a combined spin coating and spin coating element of the plasma processing chamber 310. A solvent coated with a sacrificial support material (or a transition solvent and a solvent with a sacrificial support material) can be applied using a spin-on element. Next, the combined spin coating and plasma elements of the plasma processing chamber 310 are plasma treated to remove the sacrificial support material of the substrate without damaging the HAR structure.

Referring now to Figure 4, an example of a system 409 is shown that includes a spin coating process chamber 404. A substrate support 408, such as a stand or platform, can be provided. The substrate 410 is disposed on the substrate support 408. Motor 412 can be used to selectively rotate substrate support 408 as needed to spin the liquid onto substrate 410. The substrate support 408 can include an in-line coil (not shown) that is coupled to the heater 422.

Fluid delivery system 424 is used to deliver fluid from one or more fluid sources 426-1, 426-2, ..., and 426-N (collectively referred to as fluid source 426) to substrate 410. Fluid delivery system 424 can include one or more valves 428-1, 428-2, ..., 428-N (collectively referred to as valves 428). A diverter valve 430 can be used to flush fluid from the fluid delivery system 424. Fluid delivery system 424 can be configured to deliver fluids for wet etching, wet cleaning, flushing fluids, solvents comprising structural support materials, and/or other fluids. Valve 452 and pump 454 can be used to vent the reactants in spin coating processing chamber 404 as needed. One or more sensors 458 can be provided to monitor conditions such as temperature, pressure, etc. in the processing chamber 404.

Controller 460 can be used to control one or more devices in system 409. More specifically, controller 460 can be used to control motor 412, heater 422, fluid delivery system 424, and/or valve 452 and pump 454. Controller 460 can operate based in part on feedback from one or more sensors 458.

Referring now to Figure 5, an example of a substrate processing system 510 in accordance with the present disclosure is shown. The substrate processing system 510 includes a processing chamber 512 and a gas distribution device 513. In some examples, the remote plasma can be supplied to the gas distribution device 513 or generated within the gas distribution device 513 as further described below. A substrate support 516 (such as a stand or platform) may be disposed within the processing chamber 512. A substrate 518, such as a semiconductor wafer or other type of substrate, can be disposed on the substrate support 516 during use.

The substrate processing system 510 includes a gas delivery system 520. By way of example only, gas delivery system 520 can include: one or more gas sources 522-1, 522-2, ..., and 522-N (collectively referred to as gas sources 522), where N is an integer greater than zero; 524-1, 524-2, ..., and 524-N (collectively referred to as valve 524); and mass flow controllers (MFC) 526-1, 526-2, ..., and 526-N (collectively referred to as MFC 526). The output of the gas delivery system 520 can be mixed in the manifold 530 and delivered to a remote plasma source and/or gas distribution device 513. Gas delivery system 520 supplies plasma gas chemicals.

Controller 540 can be coupled to one or more sensors 541 that monitor operational parameters such as temperature, pressure, etc. in processing chamber 512. A heater 542 may be provided to heat the substrate support 516 and the substrate 518 as needed. Valve 550 and pump 552 can be provided to evacuate gas from processing chamber 512.

By way of example only, a plasma generator 556 can be provided. In some examples, the plasma generator 556 is a downstream plasma source. The plasma generator 556 can include a plasma tube, an inductive coil, or other device for generating remote plasma. By way of example only, the plasma generator 556 can use radio frequency (RF) or microwave power and use the gaseous chemicals described above to generate remote plasma. In some examples, the inductive coil is wound around the upper stem of the showerhead and is excited by RF signals generated by the RF source and the matching network. The reactive gas flowing through the stem is excited into a plasma state by the RF signal of the inductive coil.

Controller 540 can be used to control gas delivery system 520, heater 542, valve 550, pump 552, and plasma generated by remote plasma generator 556.

Referring now to Figure 6, a combined spin coating and plasma processing chamber 610 is shown. The combined spin-on and plasma processing chamber 610 includes a controller 620 configured to control wet or wet cleaning, wet rinse, selective transition solvent coating, solvent coating of a sacrificial support material And the generation of plasma.

More specifically, the controller 620 delivers a wet etching solution, a cleaning solution, or a wet rinsing solution to the substrate. Thereafter, the controller 620 delivers a solvent (or a selective transition solvent and a subsequent solvent comprising the sacrificial support material) comprising the sacrificial support material. During or after fluid delivery, the controller can use motor 412 to rotate substrate support 408 to spin coating fluid onto the substrate. Rotating the substrate support 408 can also remove excess solvent/sacrificial support material.

After coating, the solvent evaporates leaving a sacrificial support material that supports the HAR structure. Controller 620 then controls gas delivery system 520 and plasma generator 556 to produce a plasma to remove the sacrificial support material and to dry the HAR structure without damaging the HAR structure. While the example of removal of the sacrificial support material including the plasma is presented and described in the figures, ozone may alternatively be used to remove the sacrificial support material.

In some examples, the sacrificial support material comprises a polymer component and a nanoparticle component. The sacrificial support material is delivered via a solvent, as described above. By way of example only, suitable solvents include organic solvents and deionized water, although other solvents may be used. Sacrificial support materials comprising nanoparticulates are thermally stable and can achieve higher ashing temperatures, thus achieving higher throughput.

Examples of nanoparticle constituents include, but are not limited to, organic polymers containing nanoparticle or carbon-based nanoparticles (such as fullerenes or fullerenes), organic microparticles, latexes, inorganic nanoparticles (such as SiO). ₂ ). In some examples, the nanoparticle material used has a largest dimension of less than 12 nm, less than 10 nm, or less than 8 nm. In some examples, the largest dimension of the nanoparticulate material is less than or equal to half the distance between adjacent HAR structures (eg, the shortest distance). In some examples, the nanoparticulate material can be volatilized using plasma chemistry.

Examples of polymers include low molecular weight polymers or oligomers. The low molecular weight polymer refers to a molecular weight of less than 15000 grams per mole, or less than 10,000 grams per mole, or less than 8000 grams per mole, or less than 5000 grams per mole, or less than 3000 grams per mole, or Less than 2000 grams per mole, or less than 1000 grams per mole of polymer. In some examples, a polymer having a molecular weight of about 600 grams per mole can be used. In some examples, the largest dimension of the polymer is less than or equal to half the distance between adjacent HAR structures (eg, the shortest distance). In some examples, the polymer can be volatilized using plasma chemistry.

In some examples, the sacrificial support material can be enriched in polymer relative to the nanoparticulate material. In some examples, a polymer-rich means that the weight ratio of the polymer to the nanoparticulate material is greater than or equal to 1:1, greater than or equal to 2:1, greater than or equal to 3:1, greater than or equal to 5:1, greater than or Equal to 10:1, greater than or equal to 25:1, or greater than or equal to 50:1. In some examples, the weight ratio of solids to solvent can be less than or equal to 0.40, less than or equal to 0.25, less than or equal to 0.2, less than or equal to 0.15, less than or equal to 0.1, or less than or equal to 0.05. The solid may comprise a solid of the polymer and a solid of the nanoparticulates. As described above, examples of the solvent may include an organic solvent and water.

The sacrificial support material may also include one or more surfactants to reduce surface tension and/or improve gap fill between the HAR structures and coating uniformity of the HAR structure. The surfactant used can be selected based on the mutual solubility, the ability to use plasma removal, and the effect of surface tension.

The high temperature exothermic reaction that occurs during plasma removal of the sacrificial support material may cause a glass transition of the sacrificial support material. This glass transition causes the melt to form. The melt behaves like a liquid and may cause HAR structure collapse during the removal of the sacrificial support material. Avoiding collapse by designing complex, cross-linked support materials and/or limiting the temperature during removal of the support material. However, because the removal of the support material takes longer to complete, this may result in reduced process capacity.

The addition of the nanoparticulate material increases the glass transition temperature of the sacrificial support material. Sacrificial support materials with higher glass transition temperatures and improved thermal stability are expected to enhance process throughput. The glass transition temperature of the sacrificial support material comprising both the polymer and the nanoparticulate material is higher than the glass transition temperature of the sacrificial support material excluding the nanoparticulate material. The nanoparticulate material increases the glass transition temperature of the sacrificial support because the interaction of the polymer with the surface of the particle decelerates the dynamics of the polymer chain. Increasing the glass transition temperature allows higher temperatures to be used for plasma removal of the sacrificial support material, thereby increasing the plasma removal rate and reducing process time.

The nanoparticulate material can also be adsorbed on the sidewalls of the HAR structure and avoid viscous effects. Some materials (such as citrate) that precipitate out of the solvent form a chemical bond, such as a silica bridge. Because the nanoparticulate material has a large size, the nanoparticulate material can avoid the formation of this chemical bond/bridge. Therefore, nanoparticle can reduce or avoid the viscous effect.

By way of example only, a solution providing a sacrificial support material has a higher glass transition temperature than the polymer and includes 10 wt% polypropylene decylamine (polymer), 1 wt% fullerol (nanoparticle material) 0.2 wt% ammonium lauryl sulfate (surfactant), and deionized water (solvent). In another example, the solution providing the sacrificial support material has a higher glass transition temperature than the polymer and includes 10 wt% polypropylene decylamine (polymer), 0.2 wt% fullerol (nanoparticle material) 0.2 wt% ammonium lauryl sulfate (surfactant), and deionized water (solvent). As noted above, the weight ratio of the components of the composition can be selected/adjusted to optimize the filling, coating uniformity, film thickness, and desired thermal properties of the resulting sacrificial support. In some polymer-rich paradigms, the solution may include up to 20 wt% polymer, up to 10 wt% of nanoparticulates, up to 5 wt% of surfactant, and the balance of solvents.

Referring now to Figure 7A, an exemplary substrate portion includes a sacrificial support material 704 that does not include a nanoparticulate material. The sacrificial support material 704 undergoes a glass transition during plasma removal to form a melt. When the sacrificial support material 704 is removed, the melt causes the HAR structure to collapse. In addition, bridging or chemical bonding occurs between adjacent HAR structures.

Referring now to Figure 7B, the exemplary substrate portion includes a sacrificial support material 708 that includes a nanoparticulate material. By way of example only, C60-fullerol (nanoparticulate material) and polypropylene decylamine (PAM) polymers can be used. The nanoparticulate material increases the glass transition temperature of the resulting sacrificial support material. Higher temperatures can therefore be used during plasma removal of the sacrificial support material 708. In addition, nanoparticle materials can avoid viscous effects by minimizing or avoiding chemical bonding or bridging between adjacent HAR structures.

Referring now to Figure 8, the glass transition temperature of the sacrificial support is increased and a polymer having a lower glass transition temperature (Tg) is also used. Therefore, other lower cost component formulation options can be utilized and still produce a non-fragmented drying. By way of example only, for different types of polymers, the glass transition temperature is shown as a function of the weight ratio of the fullerene nanoparticles. Figure 8 illustrates the use of different polymers based on the amount and type of nanoparticulate material.

Certain types of nanoparticulate materials may only partially fill the gaps between the HAR structures and leave holes (unfilled areas) between adjacent HAR structures. Partially filling the gap between the HAR structures may cause stress on the HAR structure. In some examples, annealing helps to cause the sacrificial support material to fill the pores and reduce the stress on the HAR structure. In other examples, the sacrificial support material may not undergo glass or phase transitions at temperatures below the maximum allowable device processing temperature. Therefore, annealing may not help to fill the sacrificial support material with holes prior to removal.

In some examples, the sacrificial support material can be enriched in nanoparticulate material relative to the polymer. In some examples, the nanoparticle-rich material means that the weight ratio of the nanoparticulate material to the polymer is greater than or equal to 1:1, greater than or equal to 1.05:1, greater than or equal to 1.1:1, greater than or equal to 1.2:1. , greater than or equal to 1.5:1, greater than or equal to 2:1. In some examples, the weight ratio of solids to solvent can be less than or equal to 0.40, less than or equal to 0.25, less than or equal to 0.2, less than or equal to 0.15, less than or equal to 0.1, or less than or equal to 0.05. The solid may comprise a solid of the polymer and a solid of the nanoparticulate material. As described above, examples of the solvent may include an organic solvent and water.

The sacrificial support material may also include one or more surfactants to reduce surface tension and/or improve gap fill between the HAR structures and coating uniformity of the HAR structure. As described above, the surfactant used can be selected based on the mutual solubility, the ability to remove using plasma, and the influence of surface tension.

The polymer can be a liquid or a solid and it improves the flow of the sacrificial support material. The polymer may comprise an organic based polymer, an organic based oligomer, one or more organic molecules, and/or one or more ionic liquids. In some examples, the polymer can be volatilized using plasma chemistry. In some examples, the polymer is miscible with the nanoparticulate material in a solvent.

Examples of solutions that provide a sacrificial support material with higher fluidity for better filling include 7 wt% fullerol (nanoparticles), 5 wt% polyacrylamide with a molecular weight < 15000 g/mol (polymer) ), 0.2 wt% ammonium lauryl sulfate (surfactant), and the rest of the deionized water (solvent). Another example of a solution that provides a higher flowability to a better filled sacrificial support material includes 7 wt% fullerol (nanoparticulate material), 3 wt% polyethylene glycol having a molecular weight < 1000 g/mol (Polymer), 0.2 wt% ammonium lauryl sulfate (surfactant), and deionized water (solvent). In some examples of nanoparticles rich in microparticles, the solution may include up to 10 wt% polymer, up to 20 wt% of nanoparticulates, up to 5 wt% of surfactant, and the balance of solvents. While specific examples are provided, the weight ratio or material can be adjusted to optimize the filling, coating uniformity, film thickness, and desired thermal properties of the sacrificial support material of the composition.

Referring now to Figures 9A and 9B, an example of a sacrificial support material is shown. In FIG. 9A, a portion of the substrate prior to annealing is shown that includes two cylindrical bodies 216, a gap 220 between the two cylindrical bodies 216, and a sacrificial support material 904. In FIG. 9B, a portion of the substrate after annealing is shown that includes two cylindrical bodies 216, a gap 220 between the two cylindrical bodies 216, and a sacrificial support material 904.

In the example of FIGS. 9A and 9B, the sacrificial support material does not include a polymer and only partially fills the gap 220 while leaving a hole 908 near the substrate 212. By way of example only, the sacrificial support material 904 can be produced from an exemplary solution comprising: 7 wt% fullerol (nanoparticulate material), 0.2 wt% ammonium lauryl sulfate (surfactant), And deionized water (solvent). Although the annealing is performed at a temperature that allows for the maximum device processing temperature, the sacrificial support material 904 does not undergo a glass transition during annealing. Therefore, the holes 908 are still present after annealing.

Referring now to Figures 10A and 10B, another example of a sacrificial support material is shown. In FIG. 10A, a portion of the substrate prior to annealing is shown that includes a cylindrical body 216, a gap 220 between the cylindrical bodies 216, and a sacrificial support material 1004. In FIG. 10B, a portion of the substrate after annealing is shown that includes a cylindrical body 216, a gap 220 between the cylindrical bodies 216, and a sacrificial support material 1004. In the example of Figures 10A and 10B, the sacrificial support material 1004 comprises a polymer. The sacrificial support material 1004 can also include a surfactant. By way of example only, the sacrificial support material 1004 can be produced from an exemplary solution comprising: 7 wt% fullerol (nanoparticulate material), 0.2 wt% ammonium lauryl sulfate (surfactant), 3 wt% polyethylene glycol (polymer), and deionized water (solvent).

In FIG. 10A, the sacrificial support material 1004 can only partially fill the gap 220 while leaving a hole 1008 near the substrate 212. In FIG. 10B, the sacrificial support material 1004 after flowing into the gap 220 and filling the holes 1008 is shown. The sacrificial support material 1004 flows into the gap 220 and fills the holes 1008 with or without annealing. After the sacrificial support material 1004 is completely or partially removed, the sacrificial support material 1004 that flows into filling the holes 1008 helps to avoid HAR structure collapse.

Referring now to Figure 11A, a substrate includes a plurality of cylindrical bodies 216 and a gap 220 between the cylindrical bodies 216. In Figure 11A, a sacrificial support material that does not include a polymer is used. By way of example only, the sacrificial support material of Figure 11A can be produced from an exemplary solution comprising the following ingredients: 7 wt% fullerol (nanoparticulate material), 0.2 wt% ammonium lauryl sulfate (surfactant) ), and deionized water (solvent). As shown, the cylindrical bodies 216 are drawn closer to each other even after annealing, due to the gap between adjacent cylindrical bodies.

Referring now to Figure 11B, a substrate includes a plurality of cylindrical bodies 216 and a gap 220 between the cylindrical bodies 216. In Figure 11B, a sacrificial support material comprising a polymer is used and annealing is performed. By way of example only, the sacrificial support material of Figure 11B can be produced from an exemplary solution comprising the following ingredients: 7 wt% fullerol (nanoparticulate material), 0.2 wt% ammonium lauryl sulfate (surfactant) ), 3 wt% polyethylene glycol (polymer) having a molecular weight of 600 g/mol, and deionized water (solvent). As shown, the cylindrical bodies 216 are less closely drawn to each other than the example of FIG. 11A.

In one feature, a method of drying a substrate comprising a plurality of high aspect ratio (HAR) structures is described. The method comprises the steps of: (i) wet etching, (i) wet etching, using at least one of (a) a wet etching solution, (b) a wet cleaning solution, and (c) a wet rinsing solution, respectively ( Ii) after at least one of wet cleaning, and (iii) wet rinsing, and without drying the substrate: depositing a solution between the plurality of HAR structures, the deposition solution comprising a polymer component, a rice particle component, and a solvent; wherein when the solvent volatilizes, the sacrificial support material is precipitated from the solution and at least partially fills the plurality of HAR structures, and the sacrificial support material comprises: (i) a polymer material from the solution The polymer component; and (ii) a nanoparticulate material, the nanoparticle component from the solution; and exposing the substrate to a plasma generated using plasma gas chemistry to volatilize the sacrificial support material.

In other features, the weight ratio of the nanoparticulate component of the solution to the polymer component of the solution is greater than or equal to 1:1. In other features, the solution comprises a weight fraction of solids to solvent less than or equal to 0.4. In other features, the solution comprises: 5 percent by weight of polyacrylamide having a molecular weight of less than 15,000 grams per mole; 7 percent by weight of fullerol; and 0.2 percent by weight of ammonium lauryl sulfate; The rest is deionized water. In other features, the solution comprises: 7 parts by weight of fullerol; 3 parts by weight of polyethylene glycol having a molecular weight of less than 1000 grams per mole; and 0.2 weight percent ammonium lauryl sulfate; The rest is deionized water. In other features, the weight ratio of the nanoparticulate component of the solution to the polymer component of the solution is greater than or equal to 1.2:1. In other features, the solution further comprises a surfactant. In other features, the nanoparticle material has a largest dimension that is less than half the distance between adjacent ones of the plurality of HAR structures. In other features, the nanoparticulate material has a largest dimension of less than 20 nanometers (nm). In other features, the largest dimension of the polymeric material is less than half the distance between adjacent ones of the plurality of HAR structures. In other features, the polymeric material has a largest dimension of less than 20 nanometers (nm). In other features, the polymeric material has a molecular weight of less than 15,000 grams per mole. In other features, the weight ratio of the polymer component of the solution to the nanoparticulate component of the solution is greater than or equal to 5:1. In other features, the weight ratio of the polymer component of the solution to the nanoparticle component of the solution is greater than or equal to 10:1. In other features, the weight ratio of the polymer component of the solution to the nanoparticle component of the solution is greater than or equal to 1:1. In other features, the solution comprises a weight fraction of solids to solvent less than or equal to 0.4. In other features, the solution comprises: 10 parts by weight of polyacrylamide; 0.2% by weight of fullerol; 0.2% by weight of ammonium lauryl sulfate; and the balance being deionized water. In other features, the solution comprises: 1 part by weight of fullerol; 10 parts by weight of polyacrylamide; 0.2% by weight of ammonium lauryl sulfate; and the balance being deionized water. In other features, the first glass transition temperature of the polymeric material is lower than the second glass transition temperature of the sacrificial support material. In other features, the plasma is a downstream plasma.

In one feature, a system for drying a substrate comprising a plurality of high aspect ratio (HAR) structures is described. The system comprises: a processing chamber; a substrate support disposed in the processing chamber; a gas delivery system for delivering a gas mixture to the processing chamber; and a fluid delivery system configured to deliver the solution to the substrate a plasma generator configured to generate plasma in the processing chamber; a controller in communication with the fluid delivery system, the gas delivery system, and the plasma generator. The controller is configured to: (i) wet the substrate using at least one of (a) a wet etching solution, (b) a wet cleaning solution, or (c) a wet rinsing solution, respectively After at least one of etching, (ii) wet cleaning, or (iii) wet rinsing, and without drying the substrate: depositing a solution between the plurality of HAR structures, the solution comprising a polymer component a nanoparticle component, and a solvent; and exposing the substrate to a plasma generated using plasma gas chemistry to volatilize the sacrificial support material. When the solvent evaporates, the sacrificial support material is precipitated from the solution and at least partially fills the plurality of HAR structures, and the sacrificial support material comprises: (i) a polymer material, the polymer component from the solution; and Ii) a nanoparticulate material, the nanoparticulate component from the solution.

In other features, the weight ratio of the nanoparticulate component of the solution to the polymer component of the solution is greater than or equal to 1:1. In other features, the solution comprises a weight fraction of solids to solvent less than or equal to 0.4. In other features, the solution comprises: 5 percent by weight of polyacrylamide having a molecular weight of less than 15,000 grams per mole; 7 percent by weight of fullerol; and 0.2 percent by weight of ammonium lauryl sulfate; The rest is deionized water. In other features, the solution comprises: 7 parts by weight of fullerol; 3 parts by weight of polyethylene glycol having a molecular weight of less than 1000 grams per mole; and 0.2 weight percent ammonium lauryl sulfate; The rest is deionized water. In other features, the weight ratio of the nanoparticulate component of the solution to the polymer component of the solution is greater than or equal to 1.2:1. In other features, the solution further comprises a surfactant. In other features, the nanoparticle material has a largest dimension that is less than half the distance between adjacent ones of the plurality of HAR structures. In other features, the nanoparticulate material has a largest dimension of less than 20 nanometers (nm). In other features, the largest dimension of the polymeric material is less than half the distance between adjacent ones of the plurality of HAR structures. In other features, the polymeric material has a largest dimension of less than 20 nanometers (nm). In other features, the polymeric material has a molecular weight of less than 15,000 grams per mole. In other features, the weight ratio of the polymer component of the solution to the nanoparticulate component of the solution is greater than or equal to 5:1. In other features, the weight ratio of the polymer component of the solution to the nanoparticle component of the solution is greater than or equal to 10:1. In other features, the weight ratio of the polymer component of the solution to the nanoparticle component of the solution is greater than or equal to 1:1. In other features, the solution comprises a weight fraction of solids to solvent less than or equal to 0.4. In other features, the solution comprises: 10 parts by weight of polyacrylamide; 0.2% by weight of fullerol; 0.2% by weight of ammonium lauryl sulfate; and the balance being deionized water. In other features, the solution comprises: 1 part by weight of fullerol; 10 parts by weight of polyacrylamide; 0.2% by weight of ammonium lauryl sulfate; and the balance being deionized water. In other features, the first glass transition temperature of the polymeric material is lower than the second glass transition temperature of the sacrificial support material. In other features, the plasma generator is configured to generate downstream plasma in the processing chamber.

The previous description is merely illustrative, and is not intended to limit the scope of the disclosure, its application, or use. The main teachings of the present disclosure can be implemented in various forms. Therefore, the present invention is not to be limited as being limited by the scope of the present disclosure. As used herein, the phrase "at least one of A, B, and C" shall be interpreted to mean the logical (A or B or C) of the non-exclusive logical OR, and shall not be construed as meaning "At least one of A, at least one of B, and at least one of C". It will be appreciated that one or more of the steps may be performed in a different order (or concurrently) without changing the principles of the disclosure.

In some embodiments, the controller is part of a system that can be part of the above examples. Such systems may include semiconductor processing equipment including one or more processing tools, one or multiple chambers, one or multiple stages for processing, and/or specific processing elements (wafer holders, gas flow systems, etc.). The systems can be integrated with the electronic device to control the operation of the semiconductor wafer or substrate before, during, and after processing. These electronic devices may be referred to as "controllers" which may control various components or sub-components of one or more systems. Depending on the needs of the process and/or the type of system, the controller can be programmed to control any of the processes disclosed in this specification, including process gas delivery, temperature setting (eg, heating and/or cooling), pressure Settings, vacuum settings, power settings, RF generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operational settings, access tools, and other connections to specific systems or interfaces with specific system interfaces Wafer transfer of tools and/or load lock chambers.

Broadly speaking, a controller can be defined as an electronic device having various integrated circuits, logic, memory, and/or software that receive commands, send commands, control operations, allow cleaning operations, allow end point measurements, and the like. The integrated circuit may include a firmware in the form of firmware for storing program instructions, digital signal processors (DSPs), chips defined as special application integrated circuits (ASICs), and/or one of executable program instructions (eg, software). Or more microprocessors or microcontrollers. The program instructions can be instructions that are transmitted to the controller in various individual settings (or program files) that define operational parameters for performing a particular process on a semiconductor wafer, or for a semiconductor wafer, or for a system. In some implementations, the operational parameter can be part of a formulation defined by a process engineer for one or more layers, materials, metals, oxides, ruthenium, ruthenium dioxide, surfaces, circuits And/or one or more processing steps are completed during manufacture of the die of the wafer.

In some embodiments, the controller can be part of a computer or connected to a computer that is integrated with the system, connected to the system, or connected to the system via a network, or a combination thereof. For example, the controller can be located in the "cloud" or all or part of the fab's host computer system, which allows for remote access to wafer processing. The computer can achieve remote access to the system to monitor the current manufacturing process, view past manufacturing operations history, view trends or performance metrics from multiple manufacturing operations, and change current processing parameters to set processing Steps to continue the current process or start a new process. In some instances, a remote computer (eg, a server) can provide process recipes to the system over a network, which can include a local area network or the Internet. The remote computer can include a user interface that can be parameterized and/or configured for input or programming, and parameters and/or settings are then transmitted from the remote computer to the system. In some examples, the controller receives instructions in the form of data that, during one or more operations, specify parameters for each of the processing steps to be performed. It should be appreciated that the parameters may be specific to the type of process to be performed, and the type of tool (the controller is configured to interface with or control the tool interface). Thus, as described above, the controller can be dispersed, for example by including one or more separate controllers that are connected together through a network and operate toward a common target, such as the process and control described in this specification. . An example of a separate controller for such purposes may be one or more integrated circuits on the chamber that are located at one of the remote end (eg, at the platform level, or part of the remote computer) or A plurality of integrated circuit connections are combined to control the process on the chamber.

An exemplary system can include a plasma etch chamber or module, a plasma stripping chamber or module, a deposition chamber or module, a rotary rinsing chamber or module, a metal plating chamber or module, a clean chamber, or Modules, beveled etching chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, Atomic layer etching (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductors that may be associated with or used in the manufacture and/or production of semiconductor wafers Processing system, but not limited to this.

As described above, depending on the process steps (or multiple process steps) to be performed by the tool, the controller can communicate with one or more of the following: other tool circuits or modules, other tool components, cluster tools, other tool interfaces, and traction tools. Tools adjacent to the tool, throughout the plant, main computer, another controller, or the location of the wafer container to or from the tool in the semiconductor manufacturing facility and/or the tool for material transfer.

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200‧‧‧Substrate
204‧‧‧HAR structure
212‧‧‧Lower substrate layer/substrate
216‧‧‧ cylindrical body
220‧‧‧ gap
224‧‧‧ fluid
238‧‧‧Transition solvent
240‧‧‧Solvent
241‧‧‧Support material
300‧‧‧ chamber
304‧‧‧ chamber
310‧‧‧ chamber
404‧‧‧Spin coating chamber
408‧‧‧Substrate support
409‧‧‧System
410‧‧‧Substrate
412‧‧‧Motor
422‧‧‧heater
424‧‧‧Fluid transport system
426‧‧‧liquid source
428‧‧‧Valve
430‧‧‧Diverter valve
452‧‧‧ valve
454‧‧ ‧ pump
458‧‧‧ sensor
460‧‧‧ Controller
510‧‧‧ system
512‧‧‧Processing chamber
513‧‧‧Gas distribution device
516‧‧‧Substrate support
518‧‧‧Substrate
520‧‧‧ gas delivery system
522‧‧‧ gas source
524‧‧‧ valve
526‧‧‧MFC
530‧‧‧Management
540‧‧‧ Controller
541‧‧‧ sensor
542‧‧‧heater
550‧‧‧ valve
552‧‧‧ pump
556‧‧‧Plastic generator
610‧‧‧室
620‧‧‧ Controller
704‧‧‧Materials
708‧‧‧Materials
904‧‧‧ Sacrificial support material
908‧‧‧ hole
1004‧‧‧ Sacrificial support material
1008‧‧‧ hole

The disclosure will be more fully understood from the embodiments and the accompanying drawings, in which:

1 is a flow chart illustrating an example of a method of drying a plurality of HAR structures of a substrate by plasma;

2A-2D are side views illustrating an example of a substrate during drying using plasma;

Figure 3A is a functional block diagram illustrating a spin coating process chamber and a plasma processing chamber;

Figure 3B is a functional block diagram illustrating a combined spin coating and plasma processing chamber;

4 is a functional block diagram of an exemplary spin coating process chamber;

Figure 5 is a functional block diagram of an exemplary plasma processing chamber;

Figure 6 is a functional block diagram of an exemplary combined spin coating and plasma processing chamber;

7A is an exemplary side view of a substrate and a sacrificial support material, wherein the sacrificial support material does not include a nanoparticulate material;

7B is an exemplary side view of a substrate and a sacrificial support material, wherein the sacrificial support material comprises a nanoparticulate material;

Figure 8 is an exemplary plot of glass transition temperature and nanoparticle weight fraction for different polymers;

9A is a side view of the substrate portion and the sacrificial support material of the nanoparticle before annealing, wherein the sacrificial support material does not comprise an additive material of the polymer;

9B is a side view of the substrate portion and the sacrificial support material of the nanoparticles after annealing, wherein the sacrificial support material does not comprise an additive material of the polymer;

10A is a side view of the substrate portion and the sacrificial support material of the nanoparticle before annealing, wherein the sacrificial support material comprises a polymer addition material;

10B is a side view of the substrate portion and the sacrificial support material of the nanoparticle after annealing, wherein the sacrificial support material comprises a polymer addition material;

11A is a side view of an exemplary annealed substrate and a sacrificial support material, wherein the sacrificial support material comprises a nanoparticulate material but no polymer;

11B is a side view of an exemplary annealed substrate and a sacrificial support material, wherein the sacrificial support material comprises a nanoparticulate material and a polymer;

In the figures, reference symbols may be reused to identify similar and/or identical elements.

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Claims (40)

A method of drying a substrate comprising a plurality of high aspect ratio (HAR) structures, comprising the steps of: (a) a wet etching solution, (b) a wet cleaning solution, and (c) a wet rinsing solution, respectively After at least one of (i) wet etching, (ii) wet cleaning, and (iii) wet rinsing of the substrate, and without drying the substrate: at the plural HAR Depositing a solution between the structures, the solution comprising a polymer component, a nanoparticulate component, and a solvent; wherein when the solvent volatilizes, the sacrificial support material is precipitated from the solution and at least partially fills the complex HAR structure, and the sacrificial The support material comprises: (i) a polymeric material, the polymeric component from the solution; and (ii) a nanoparticulate material, the nanoparticulate component from the solution; and exposing the substrate to the use of plasma gas chemistry The plasma is generated to volatilize the sacrificial support material. A method of drying a substrate comprising a plurality of HAR structures, as in claim 1, wherein the weight ratio of the nanoparticle component of the solution to the polymer component of the solution is greater than or equal to 1:1. A method of drying a substrate comprising a plurality of high aspect ratio (HAR) structures, as in claim 2, wherein the solution comprises a weight fraction of solids to solvent less than or equal to 0.4. A method for drying a substrate comprising a plurality of HAR structures, as in claim 2, wherein the solution comprises: 5 parts by weight of polyacrylamide having a molecular weight of less than 15,000 grams per mole; and a weight percentage of 7 Alcohol; ammonium lauryl sulfate in a weight percentage of 0.2; and the remainder being deionized water. A method for drying a substrate comprising a plurality of HAR structures, as in claim 2, wherein the solution comprises: 7 parts by weight of fullerol; and 3 parts by weight of polyethylene glycol having a molecular weight of less than 1000 per mole. g; ammonium dodecyl sulfate in a weight percentage of 0.2; and the remainder being deionized water. A method of drying a substrate comprising a plurality of HAR structures, as in claim 1, wherein the weight ratio of the nanoparticle component of the solution to the polymer component of the solution is greater than or equal to 1.2:1. A method of drying a substrate comprising a plurality of HAR structures, as in claim 1, wherein the solution further comprises a surfactant. A method of drying a substrate comprising a plurality of HAR structures, as in claim 1, wherein the maximum size of the nanoparticulate material is less than half the distance between adjacent ones of the plurality of HAR structures. A method of drying a substrate comprising a plurality of HAR structures, as in claim 8, wherein the nanoparticulate material has a largest dimension of less than 20 nanometers (nm). A method of drying a substrate comprising a plurality of HAR structures, as in claim 8, wherein the maximum dimension of the polymeric material is less than half the distance between adjacent ones of the plurality of HAR structures. A method of drying a substrate comprising a plurality of HAR structures, as in claim 10, wherein the maximum dimension of the polymeric material is less than 20 nanometers (nm). A method of drying a substrate comprising a plurality of HAR structures as claimed in claim 1 wherein the molecular weight of the polymeric material is less than 15,000 grams per mole. A method of drying a substrate comprising a plurality of HAR structures, as in claim 1, wherein the weight ratio of the polymer component of the solution to the nanoparticle component of the solution is greater than or equal to 5:1. A method of drying a substrate comprising a plurality of HAR structures, as in claim 1, wherein the weight ratio of the polymer component of the solution to the nanoparticle component of the solution is greater than or equal to 10:1. A method of drying a substrate comprising a plurality of HAR structures, as in claim 1, wherein the weight ratio of the polymer component of the solution to the nanoparticle component of the solution is greater than or equal to 1:1. A method of drying a substrate comprising a plurality of HAR structures, as in claim 15, wherein the solution comprises a weight ratio of solid to solvent of less than or equal to 0.4. A method for drying a substrate comprising a plurality of HAR structures, as in claim 15, wherein the solution comprises: 10% by weight of polyacrylamide; 0.2% by weight of fullerol; and 0.2 by weight of 0.2 Ammonium alkyl sulfate; and the rest is deionized water. A method for drying a substrate comprising a plurality of HAR structures, as in claim 15, wherein the solution comprises: 1 part by weight of fullerol; 10 parts by weight of polyacrylamide; and 12 parts by weight of 0.2 Ammonium alkyl sulfate; and the rest is deionized water. A method of drying a substrate comprising a plurality of HAR structures, as in claim 15 wherein the first glass transition temperature of the polymeric material is lower than a second glass transition temperature of the sacrificial support material. A method of drying a substrate comprising a plurality of HAR structures, as in claim 1, wherein the plasma is a downstream plasma. A system for drying a substrate comprising a plurality of high aspect ratio (HAR) structures, comprising: a processing chamber; a substrate support disposed in the processing chamber; a gas delivery system for transporting the gas mixture to a processing chamber; a fluid delivery system configured to deliver a solution to the substrate; a plasma generator configured to generate plasma in the processing chamber; a controller, the fluid delivery system, the gas delivery system Communicating with the plasma generator and configured to: operate at least one of (a) a wet etching solution, (b) a wet cleaning solution, or (c) a wet rinse solution, respectively After the substrate is subjected to at least one of (i) wet etching, (ii) wet cleaning, or (iii) wet rinsing, and without drying the substrate: depositing a solution between the plurality of HAR structures The solution includes a polymer component, a nanoparticulate component, and a solvent; wherein when the solvent evaporates, the sacrificial support material is precipitated from the solution and at least partially fills the plurality of HAR structures, and the sacrificial support material comprises: (i) a polymeric material, the polymeric component from the solution; and (ii) a nanoparticulate material, the nanoparticulate component from the solution; and exposing the substrate to electricity generated using plasma gas chemistry Slurry to volatilize the sacrificial support material. A system for drying a substrate comprising a plurality of HAR structures, as in claim 21, wherein the weight ratio of the nanoparticulate component of the solution to the polymer component of the solution is greater than or equal to 1:1. A system for drying a substrate comprising a plurality of HAR structures, as in claim 22, wherein the solution comprises a weight fraction of solids to solvent less than or equal to 0.4. A system for drying a substrate comprising a plurality of HAR structures, as in claim 22, wherein the solution comprises: 5 parts by weight of polyacrylamide having a molecular weight of less than 15,000 grams per mole; and 7 by weight Fullerol; ammonium dodecyl sulfate in a weight percentage of 0.2; and the remainder being deionized water. A system for drying a substrate comprising a plurality of HAR structures, as in claim 22, wherein the solution comprises: 7 parts by weight of fullerol; and 3 parts by weight of polyethylene glycol, the molecular weight of which is less than 1000 g of ear; ammonium lauryl sulfate in a weight percentage of 0.2; and the rest being deionized water. A system for drying a substrate comprising a plurality of HAR structures, as in claim 21, wherein the weight ratio of the nanoparticulate component of the solution to the polymer component of the solution is greater than or equal to 1.2:1. A system for drying a substrate comprising a plurality of HAR structures, as in claim 21, wherein the solution further comprises a surfactant. A system for drying a substrate comprising a plurality of HAR structures, as in claim 21, wherein the maximum size of the nanoparticulate material is less than half the distance between adjacent ones of the plurality of HAR structures. A system for drying a substrate comprising a plurality of HAR structures, as in claim 28, wherein the nanoparticulate material has a largest dimension of less than 20 nanometers (nm). A system for drying a substrate comprising a plurality of HAR structures, as in claim 28, wherein the maximum dimension of the polymeric material is less than half the distance between adjacent ones of the plurality of HAR structures. A system for drying a substrate comprising a plurality of HAR structures, as in claim 30, wherein the polymeric material has a largest dimension of less than 20 nanometers (nm). A system for drying a substrate comprising a plurality of HAR structures, as claimed in claim 21, wherein the molecular weight of the polymeric material is less than 15,000 grams per mole. A system for drying a substrate comprising a plurality of HAR structures, as in claim 21, wherein the weight ratio of the polymer component of the solution to the nanoparticle component of the solution is greater than or equal to 5:1. A system for drying a substrate comprising a plurality of HAR structures, as in claim 21, wherein the weight ratio of the polymer component of the solution to the nanoparticle component of the solution is greater than or equal to 10:1. A system for drying a substrate comprising a plurality of HAR structures, as in claim 21, wherein the weight ratio of the polymer component of the solution to the nanoparticle component of the solution is greater than or equal to 1:1. A system for drying a substrate comprising a plurality of HAR structures, as in claim 35, wherein the solution comprises a weight fraction of solids to solvent less than or equal to 0.4. A system for drying a substrate comprising a plurality of HAR structures, as in claim 35, wherein the solution comprises: 10% by weight of polyacrylamide; 0.2% by weight of fullerol; 0.2% by weight Ammonium dodecyl sulfate; and the rest is deionized water. A system for drying a substrate comprising a plurality of HAR structures, as in claim 35, wherein the solution comprises: 1 part by weight of fullerol; 10 parts by weight of polyacrylamide; and 0.2 by weight Ammonium dodecyl sulfate; and the rest is deionized water. A system for drying a substrate comprising a plurality of HAR structures, as in claim 35, wherein the first glass transition temperature of the polymeric material is lower than a second glass transition temperature of the sacrificial support material. A system for drying a substrate comprising a plurality of HAR structures, as in claim 21, wherein the plasma generator is configured to produce downstream plasma in the processing chamber.