CN101957562A - Double-exposure method - Google Patents
Double-exposure method Download PDFInfo
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- CN101957562A CN101957562A CN 201010265032 CN201010265032A CN101957562A CN 101957562 A CN101957562 A CN 101957562A CN 201010265032 CN201010265032 CN 201010265032 CN 201010265032 A CN201010265032 A CN 201010265032A CN 101957562 A CN101957562 A CN 101957562A
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Abstract
The invention provides a double-exposure aligned scanning exposure method, which comprises the following steps of: (1) forming a primary optical axis through a projection lens by using a light source; (2) putting a first mask plate and a second mask plate on a plate bearing platform; (3) aligning the mask plates; (4) performing off-axis silicon chip alignment, and putting a silicon chip on a chip bearing platform; (5) moving the silicon chip to the position of the primary optical axis; (6) driving the first mask plate to move to the position of the primary optical axis by using the plate bearing platform, and exposing and imaging the figures of the first mask plate on the silicon chip; and (7) driving the second mask plate to move to the position of the primary optical axis by using the plate bearing platform, and exposing and imaging the figures of the second mask plate on the silicon chip. The two different mask plates are independently exposed on the same glued layer in turn by using the mask plate bearing platform, and the double-exposure technology can decompose a two-dimensional figure into two one-dimensional figures generated more easily and accurately.
Description
The application is that application number is 200910048281.7, and the applying date is 2009-3-26, and denomination of invention is divided an application for " mask-plate bearing bed and lithographic equipment thereof and double-exposure method ".
Technical field
The present invention relates to the manufacture of semiconductor field, particularly a kind of mask-plate bearing bed and lithographic equipment and double-exposure method that is used for double-exposure technology.
Background technology
Lithographic equipment of the prior art is mainly used in the manufacturing of integrated circuit (IC) or other microdevice.By lithographic equipment, the multilayer mask with different mask patterns is imaged on the wafer that is coated with photoresist under accurately aiming at successively, for example semiconductor wafer or LCD plate.Lithographic equipment is divided into two classes substantially, one class is the stepping lithographic equipment, the mask pattern single exposure is imaged on an exposure area of wafer, wafer moves with respect to mask subsequently, next exposure area is moved to mask pattern and projection objective below, again mask pattern is exposed in another exposure area of wafer, repeat the picture that this process all exposure areas on wafer all have mask pattern.Another kind of is the step-scan lithographic equipment, and in said process, mask pattern is not the single exposure imaging, but the scanning mobile imaging by the projection light field.In the mask pattern imaging process, mask and wafer move with respect to optical projection system and projected light beam simultaneously.
At present, lithographic equipment adopts the mode of changing a mask behind every batch of silicon wafer exposure mostly, promptly after corresponding a collection of silicon wafer exposure of mask pattern, changes another mask pattern again, one deck circuit on the corresponding integrated circuit of each mask pattern.But, the unusual difficulty of the preparation of mask under the big or great situation of density of the difference of pattern on one deck.See also Fig. 1, it is depicted as the figure that silicon wafer exposure forms in the prior art.The design lines of L type that on silicon chip, develop, if adopt a mask separately exposure finish, then formed figure has fillet in L corner and produces, and influences the lines quality.
Summary of the invention
The present invention be intended to solve in the prior art owing to single exposure owing to the imaging that reason caused of the complexity of figure and density problem accurately not.
In view of this, the invention provides a kind of method of double-exposure alignment scanning exposure, may further comprise the steps: (1) utilizes light source to form primary optical axis by projection lens; (2) first mask and second mask are placed on hold on the bed; (3) carrying out described mask aims at; (4) carry out aiming at, silicon chip is placed on the wafer-supporting platform from the axle silicon chip; (5) described silicon chip is moved to described primary optical axis position; (6) utilize the described bed that holds to drive described first mask and move to described primary optical axis position, the graph exposure of first mask is imaged on the described silicon chip; (7) utilize the described bed that holds to drive described second mask and move to described primary optical axis position, the graph exposure of second mask is imaged on the described silicon chip.
Further, described step (3) specifically comprises: hold fixed alignment mark on the bed described, described first mask and second mask are provided with mark, are fixed with reference mark on described wafer-supporting platform; Described wafer-supporting platform is moved to design attitude in advance, move the described bed that holds along first direction of scanning, described alignment mark is aimed at described reference mark, and note the described coordinate of bed and the primary importance coordinate of described wafer-supporting platform of holding; Set up described relation of holding between bed and the described reference mark; Move the described bed that holds along first direction of scanning, the described first mask mark is aimed at described reference mark; Move the described bed that holds along first direction of scanning, the described second mask mark is aimed at described reference mark; Set up described coordinate relation of holding between bed, described first mask and second mask, the described reference mark.
Further, described step (4) specifically comprises: described wafer-supporting platform is moved under the off-axis alignment system, the reference marker in the described off-axis alignment system is overlapped with the reference mark of described wafer-supporting platform; Write down the second place coordinate of described wafer-supporting platform; Set up the coordinate relation between described reference mark and the described reference marker; Pass through first and second position coordinates of the described wafer-supporting platform that write down, calculate the optical axis of described off-axis alignment system and the distance between the described primary optical axis; Described distance as baseline, is set up described wafer-supporting platform and described coordinate relation of holding between the bed.Utilize described wafer-supporting platform described silicon chip to be transported in the aligning scope of described off-axis alignment system; The reference marker of described off-axis alignment system is aimed at described silicon chip mark; Set up the relation between the reference mark of described silicon chip and described wafer-supporting platform.
In sum, the technology of double-exposure of the present invention, utilize the mask-plate bearing bed that two different masks are independently exposed respectively on same rubberised layer successively, double exposure techniques can be decomposed into the pattern of two dimension the one dimension pattern of two easier generations, make the precision of minimum feature size of the mask graph comprise various features create reality, and this mask-plate bearing bed can be installed in the lithographic system.
Description of drawings
Figure 1 shows that the figure that silicon wafer exposure forms in the prior art;
Figure 2 shows that the mask-plate bearing bed structural representation in one embodiment of the invention;
Figure 3 shows that the mask-plate bearing bed position probing synoptic diagram in one embodiment of the invention;
Figure 4 shows that the drive controlling synoptic diagram of the mask-plate bearing bed in one embodiment of the invention;
Figure 5 shows that the structural representation of the double-exposure lithographic equipment that one embodiment of the invention provides;
Figure 6 shows that the process flow diagram of the double-exposure method that one embodiment of the invention provides.
Embodiment
For purpose of the present invention, feature are become apparent, provide preferred embodiment also in conjunction with the accompanying drawings, the invention will be further described.
One embodiment of the invention provides the mask-plate bearing bed that two masks can be installed simultaneously, sees also Fig. 2, and it is depicted as the structural representation of mask-plate bearing bed.This mask-plate bearing bed 200 comprises:
The first mask installation position 211 and the second mask installation position 212, be arranged on the described mask retainer 210, mask A (4) and mask B (5) can be installed on those mask installation positions simultaneously, the size structure of two installation positions is identical, and therefore two the mask A (4) that install simultaneously are also identical with the physical dimension of mask B (5).Two masks are unexpected in the course of the work to be bumped against or because of the slip that clamps not strongly solid generation even fly out, the mask installation position is two square grooves that are lower than mask retainer 210 upper surfaces in order to avoid.
Marked version installation position 240 is arranged at described mask retainer 210 centre positions, is used for adjustment notch version 250.
A plurality of mask vacuum suction grooves 230 are arranged at respectively in the described first mask installation position 211 and the second mask installation position 212, in order to absorption permanent mask version.Also can install mask fixing frame 220 additional in actual applications, with auxiliary permanent mask version.
In order to guarantee the impermeability of vacuum suction groove 230, described mask-plate bearing bed also comprises pore plug 231, to seal the gas circuit fabrication hole 232 on the described mask retainer 210.Mask through aligning the back by vacuum suction on vacuum suction groove 230, there is complete gas circuit design mask-plate bearing bed 200 inside, in the process of processing gas circuit a lot of gas circuit fabrication holes 232 are arranged, the gas circuit fabrication hole is sealed, guarantee the impermeability of vacuum suction groove 230.
Prism of corner cube installation position 260 is arranged at a side of described mask retainer 210, is used for established angle cone prism 270, to measure the position of mask.
Catoptron plated film face 280 is positioned at a side of described mask retainer 210.
At the prism of corner cube installation position of mask retainer 260 established angle cone prisms 270, and provide prism of corner cube fixed head installation position 261.Mask retainer side plated film forms catoptron plated film face 280.Prism of corner cube 270 and catoptron plated film face 280 receive the light beam that laser interferometer is sent respectively, realize the position measurement to mask.The detailed measurements method sees also Fig. 3, the Y of mask-plate bearing bed 200 is as follows to displacement measurement, the light beam that light source sends is radiated on the prism of corner cube 270 through forming two- beam 301 and 302 behind the optical-mechanical system, the folded light beam of prism of corner cube 270, Y is to the two-frequency laser interferometer measuring system for process, calculate mask Y to displacement, precision can reach 1.2nm; Calculate mask Rz simultaneously to rotation.The X of mask-plate bearing bed 200 is as follows to displacement measurement, the light beam that light source sends is divided into 3 bundle light 303 through optical device and is radiated on the catoptron plated film face 280,3 bundle light become isosceles triangle, reflection through catoptron plated film face 280, calculate mask X to displacement by X to the laser interferometer reception, precision can reach 0.6nm; Calculate mask Ry simultaneously to rotation.Thereby realize accurate measurement to the position of mask.
Fine motion motor installation position 290 is arranged on the described mask retainer, is used to install motor.The motion of mask-plate bearing bed can form 6DOF motion or 3DOF motion according to different motor drive modes.
Referring to Fig. 4, enumerating embodiment is example with the 3DOF, but is not limited in this structure.Mask-plate bearing bed 200 also can be in fine motion motor installation position 290 be installed the fine motion motors, in order to adjust the motion of described mask-plate bearing bed.Described fine motion motor comprises: linear electric motors, and voice coil motor.Mask-plate bearing bed X is realized by linear electric motors 410 (X_Motor) to driving.Linear motor rotor 411 (X_Motor_1) is connected on the mask retainer 210.Mask-plate bearing bed Y to drive and Rz to driving by two voice coil motor 420,430 (Y_Motor_R; Y_Motor_L) realize.Voice coil motor mover 421,431 (Y_Motor_R_1; Y_Motor_L_1) be installed on the mask retainer 210.When two voice coil motors 420,430 (Y_Motor) when being synchronized with the movement, mask along Y to moving, when the asynchronous motion of two voice coil motors 420,430 (Y_Motor), mask along Rz to moving.Realized the motion of 3 degree of freedom of mask thus.
This mask-plate bearing bed can be applied to lithographic system, litho machine system for example, but be not limited in this system.
Referring to Fig. 6, one embodiment of the invention provides a kind of method of double-exposure, may further comprise the steps: S610 utilizes light source to form primary optical axis by projection lens; S620 is placed on first mask and second mask and holds on the bed; S630 carries out mask and aims at; S640 carries out aiming at from the axle silicon chip, and silicon chip is placed on the wafer-supporting platform; S650 moves to described primary optical axis position with described silicon chip; S660 utilizes the described bed that holds to drive described first mask and move to described primary optical axis position, and the graph exposure of first mask is imaged on the described silicon chip; S670 utilizes the described bed that holds to drive described second mask and move to described primary optical axis position, and the graph exposure of second mask is imaged on the described silicon chip.
See also Fig. 5, it is depicted as the structural representation of the double-exposure lithographic equipment that one embodiment of the invention provides
This lithographic equipment comprises: the illuminator 500 that radiation beam is provided; Radiation laser beam is projected to the optical projection system 520 of substrate target location; The Workpiece platform structure that is used to support the mask-plate bearing bed 510 of mask equipment and is used for support base.The detailed structure of described mask-plate bearing bed 510 with above describe identically, see also Fig. 2 to Fig. 4.
It is as follows to utilize this lithographic equipment to carry out the concrete steps of double-exposure:
Utilize illuminator 500 that stable light source is provided, the light that illuminator 500 is sent forms primary optical axis 501 by throwing optical projection system 520.Pattern on the mask can dwindle certain proportion by optical projection system 520 and be imaged on the silicon chip 530, to realize exposure.
With mask 540, mask 550 is placed on simultaneously and holds on the bed 510.
Next carries out mask and aims at.Hold and be fixed with mask alignment mark 512 on the bed 510, all design underlined 541,551 on mask 540, the mask 550.The Workpiece platform structure of support base: be fixed with reference mark 570 on the wafer-supporting platform 590.
The light that illuminator 500 is sent forms primary optical axis 501 by throwing optical projection system 520.Earlier wafer-supporting platform 590 is moved to design attitude in advance, hold bed 510 along direction of scanning Y to moving, by alignment system, detect reference mark 570 and mask mark 512 in the laser interferometer system 511 above holding bed 510 simultaneously, mask mark 512 is aimed at reference mark 570.That notes that laser interferometer system measures holds bed 510, the position coordinates y1 of wafer-supporting platform 590.Set up the relation of holding between bed 510 and the reference mark 570.Hold bed 510 along direction of scanning Y to moving,, the mark 541 of mask 540 is aimed at reference mark 570 by alignment system.Hold bed 510 along direction of scanning Y to moving,, the mark 551 of mask 550 is aimed at reference mark 570 by alignment system.So just set up hold bed 510, mask 540, mask 550, and reference mark 570 between the coordinate relation.
Carry out then aiming at from the axle silicon chip.From axle silicon chip alignment system 580, be fixed on outside the projection lens, design has reference marker 581 in the off-axis alignment system.
Mobile wafer-supporting platform 590, arrive off-axis alignment system 580 times, adjust wafer-supporting platform 590 positions, reference marker 581 in the off-axis alignment system is overlapped with reference mark 570 imagings, the coordinate position y2 of the wafer-supporting platform 590 that the recording laser interferometer system is measured, set up reference mark 570, and the relation of the coordinate between the reference marker 581.The coordinate position y1, the y2 that pass through the wafer-supporting platform 590 that write down can calculate the optical axis 582 of off-axis alignment system 580, and between the primary optical axis 501 of projection lens apart from BL, BL is also referred to as baseline.By baseline BL, can set up wafer-supporting platform 590 and hold coordinate relation between the bed 510.
Utilize mechanical arm from film magazine, to take out silicon chip 530 then, be installed on the wafer-supporting platform 590 by transmission system.Wafer-supporting platform 590 is transported to silicon chip 530 in the aligning scope of off-axis alignment system 580, by off-axis alignment system 580, reference marker 581 is aimed at silicon chip mark 531, sets up the relation between silicon chip 530 and the reference mark 570.
Above alignment procedures by reference coordinate 570 indirect set up mask 540, mask 550, and silicon chip 530 between the coordinate relation.Hold bed 510 drive masks 540 along direction of scanning Y to primary optical axis 501 positions that move to projection lens, wafer-supporting platform 590 drives primary optical axis 501 positions that silicon chips 530 move to projection lens, exposes.With the figure on the mask 540, expose to silicon chip 530.The direction of scanning be Y to, step direction be X to.The graph exposure of mask 540 is finished.
Hold bed 510 and drive primary optical axis 501 positions that masks 550 move to projection lens, the graph exposure of mask 550 is imaged on the silicon chip 530.
In sum, the technology of double-exposure of the present invention, utilize the mask-plate bearing bed that two different masks are independently exposed respectively on same rubberised layer successively, double exposure techniques can be decomposed into the pattern of two dimension the one dimension pattern of two easier generations, makes the precision of minimum feature size of the mask graph comprise various features create reality.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limiting the present invention, anyly is familiar with this operator, without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking claims person of defining.
Claims (3)
1. a double-exposure method is characterized in that, may further comprise the steps:
(1) utilize light source to form primary optical axis by projection lens;
(2) first mask and second mask are placed on hold on the bed;
(3) carrying out described mask aims at;
(4) carry out aiming at, silicon chip is placed on the wafer-supporting platform from the axle silicon chip;
(5) described silicon chip is moved to described primary optical axis position;
(6) utilize the described bed that holds to drive described first mask and move to described primary optical axis position, the graph exposure of first mask is imaged on the described silicon chip; And
(7) utilize the described bed that holds to drive described second mask and move to described primary optical axis position, the graph exposure of second mask is imaged on the described silicon chip.
2. double-exposure method according to claim 1 is characterized in that, described step (3) specifically may further comprise the steps:
Hold fixed alignment mark on the bed described, described first mask and second mask are provided with mark, are fixed with reference mark on described wafer-supporting platform;
Described wafer-supporting platform is moved to design attitude in advance, move the described bed that holds along first direction of scanning, described alignment mark is aimed at described reference mark, and note the described coordinate of bed and the primary importance coordinate of described wafer-supporting platform of holding;
Set up described relation of holding between bed and the described reference mark;
Move the described bed that holds along first direction of scanning, the described first mask mark is aimed at described reference mark;
Move the described bed that holds along first direction of scanning, the described second mask mark is aimed at described reference mark; And
Set up described coordinate relation of holding between bed, described first mask and second mask, the described reference mark.
3. double-exposure method according to claim 2 is characterized in that, described step (4) specifically may further comprise the steps:
Described wafer-supporting platform is moved under the off-axis alignment system, the reference marker in the described off-axis alignment system is overlapped with the reference mark of described wafer-supporting platform;
Write down the second place coordinate of described wafer-supporting platform;
Set up the coordinate relation between described reference mark and the described reference marker;
Pass through first and second position coordinates of the described wafer-supporting platform that write down, calculate the optical axis of described off-axis alignment system and the distance between the described primary optical axis;
Described distance as baseline, is set up described wafer-supporting platform and described coordinate relation of holding between the bed;
Utilize described wafer-supporting platform described silicon chip to be transported in the aligning scope of described off-axis alignment system;
The reference marker of described off-axis alignment system is aimed at described silicon chip mark; And
Set up the relation between the reference mark of described silicon chip and described wafer-supporting platform.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010265032 CN101957562B (en) | 2009-03-26 | 2009-03-26 | Double-exposure method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010265032 CN101957562B (en) | 2009-03-26 | 2009-03-26 | Double-exposure method |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009100482817A Division CN101526754B (en) | 2009-03-26 | 2009-03-26 | Mask-plate bearing bed and photo-etching device |
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| Publication Number | Publication Date |
|---|---|
| CN101957562A true CN101957562A (en) | 2011-01-26 |
| CN101957562B CN101957562B (en) | 2012-11-14 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102692820A (en) * | 2011-03-21 | 2012-09-26 | 上海微电子装备有限公司 | Device and method for measuring projection lens distortion |
| CN102799081A (en) * | 2012-09-11 | 2012-11-28 | 上海华力微电子有限公司 | Mask plate workpiece platform of stepping type multi-exposure stepper and exposure technology |
| CN104597721A (en) * | 2015-01-20 | 2015-05-06 | 中国科学院上海光学精密机械研究所 | Ultraviolet lithograph two-dimensional platform |
| CN110727169A (en) * | 2018-07-17 | 2020-01-24 | 上海微电子装备（集团）股份有限公司 | Mask device, exposure equipment and exposure method |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4504622B2 (en) * | 2001-05-18 | 2010-07-14 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Lithographic method for manufacturing a device |
| US6777143B2 (en) * | 2002-01-28 | 2004-08-17 | Taiwan Semiconductor Manufacturing Company | Multiple mask step and scan aligner |
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2009
- 2009-03-26 CN CN 201010265032 patent/CN101957562B/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102692820A (en) * | 2011-03-21 | 2012-09-26 | 上海微电子装备有限公司 | Device and method for measuring projection lens distortion |
| CN102692820B (en) * | 2011-03-21 | 2014-12-17 | 上海微电子装备有限公司 | Device and method for measuring projection lens distortion |
| CN102799081A (en) * | 2012-09-11 | 2012-11-28 | 上海华力微电子有限公司 | Mask plate workpiece platform of stepping type multi-exposure stepper and exposure technology |
| CN104597721A (en) * | 2015-01-20 | 2015-05-06 | 中国科学院上海光学精密机械研究所 | Ultraviolet lithograph two-dimensional platform |
| CN110727169A (en) * | 2018-07-17 | 2020-01-24 | 上海微电子装备（集团）股份有限公司 | Mask device, exposure equipment and exposure method |
| CN110727169B (en) * | 2018-07-17 | 2021-04-06 | 上海微电子装备（集团）股份有限公司 | Mask device, exposure equipment and exposure method |
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| Publication number | Publication date |
|---|---|
| CN101957562B (en) | 2012-11-14 |
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Address after: 1525 Zhang Dong Road, Shanghai, No. 201203 Co-patentee after: Shanghai Micro And High Precision Mechine Engineering Co., Ltd. Patentee after: Shanghai microelectronics equipment (Group) Limited by Share Ltd Address before: 1525 Zhang Dong Road, Shanghai, No. 201203 Co-patentee before: Shanghai Micro And High Precision Mechine Engineering Co., Ltd. Patentee before: Shanghai Micro Electronics Equipment Co., Ltd. |