CN101953039A - Diode laser structure to generate diode laser radiation with optimized fiber coupling radiation parameter product - Google Patents
Diode laser structure to generate diode laser radiation with optimized fiber coupling radiation parameter product Download PDFInfo
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- CN101953039A CN101953039A CN2009801048081A CN200980104808A CN101953039A CN 101953039 A CN101953039 A CN 101953039A CN 2009801048081 A CN2009801048081 A CN 2009801048081A CN 200980104808 A CN200980104808 A CN 200980104808A CN 101953039 A CN101953039 A CN 101953039A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
- G02B19/0004—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
- G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
- G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
- G02B19/0052—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a laser diode
- G02B19/0057—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a laser diode in the form of a laser diode array, e.g. laser diode bar
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
- G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
- G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
- G02B19/0061—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a LED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02251—Out-coupling of light using optical fibres
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4043—Edge-emitting structures with vertically stacked active layers
- H01S5/405—Two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4081—Near-or far field control
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- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Semiconductor Lasers (AREA)
- Optical Couplings Of Light Guides (AREA)
Abstract
In a diode laser structure (2) with a plurality of strip emitters (31 to 38) arranged side by side whose SA-axes are arranged in the same direction and at an offset to each other in this direction, wherein the beam parameter products (BPPSA) of at least a few of the strip emitters (31 to 38) are each shifted relative to the SA-axis, according to the invention the beam parameter product (BPPSA) of the strip emitters (31 to 38) decreases, starting from the middle of the diode laser structure (2), to the two edges of the diode laser structure (2), in particular in a mirror-symmetrical manner and/or from the middle of the diode laser structure (2).
Description
Technical field
The present invention relates to a kind of diode laser structure, have a plurality of banded reflectors that are provided with adjacent to each other, these banded reflectors are provided with to dislocation in orientation on the identical direction and on this direction toward each other with its SA axis, wherein, the several at least beam parameter product difference that relates separately to the SA axis in these banded reflectors.
Background technology
This diode laser structure is for example known by JP-A-06132610.
In order to produce efficient and highlighted diode radiation, now or use a plurality of single transmit devices (width typically is the broadband shape reflector of 50 to 500 μ m) or use by the diode bars that the single transmit device/broadband shape reflector constitutes of a plurality of same widths (constitute, activity coefficient be 10 to 95% diode bars) by the broadband shape reflector of 10 to 100 same widths typically.The reflector that for example common use is 100 μ m by 30 to 50 width on the bar of 1cm constitutes, activity coefficient is 30 to 50% diode bars.
The single transmit device of the band shape of diode bars is launched a laser beam respectively, this laser beam on so-called FA (Fast Axis) direction that beam is dispersed fast for example with about 50 ° angle of radiation and beam relatively slowly disperse with respect to the rectangular so-called SA of this FA direction (Slow Axis) direction on for example propagate with about 10 ° angle of radiation.The FA direction has the highest as far as possible (almost diffraction is confined) beam quality, and the SA direction has the beam quality of relative mistake.In order to assemble these simple beams, these simple beams at first on the FA direction by means of micro-optic cylindrical lens collimation, then carry out collimation on the SA direction by means of cylindrical lens row (array).Then, beam rotates 90 ° and arrangement adjacent to each other by means of another micro-optic device.Therefore the laser beam of Cheng Xinging constitutes by the single transmit device institute emitted laser beam band that optically superposes by band shape with flushing like this.Because the single transmit device is same, so these single transmit device institute emitted laser beams have the identical beam parameter product (BPP that relates to the SA direction respectively
SA) with the identical beam parameter product (BPP that relates to the FA direction
FA), wherein, beam parameter product BPP is as giving a definition:
BPP
i＝θ
i*w
i(i＝SA，FA)
Wherein, θ: by the divergence of reflector emitted laser beam on SA direction or FA direction, w: half width of reflector on SA direction or FA direction.
With identical respectively BPP
SAAnd BPP
FAOptically one of stack laser beam band generation has at BPP with flushing
SA-BPP
FAIn the plane for rectangle or foursquare beam parameter product and therefore just have radiation loss ground or under the situation of utilizing fiber by halves, be transfused to be coupled to and have at BPP
SA-BPP
FAIt in the plane laser beam in the fiber of circle of circular beam parameter product.
Though known by US 2007/0195850A1: emitter width is provided with on the FA direction and the beam parameter product that relates to the SA axis of each reflector and the beam parameter product that relates to the SA axis of affiliated zone of fiber are complementary thus one above the other at single transmit devices different on the SA direction.But the operation of each reflector and location be trouble very, and in addition, this layout needs big relatively structure space.
Summary of the invention
Therefore, task of the present invention is, the diode structure that so further structure starts especially being made of the diode bars with single transmit device of described type or is made of the diode bars that stacks that is the folded form of diode with single transmit device, the beam parameter product of the feasible laser diode radiation that is produced is complementary with the beam parameter product of the circle of the size of simple mode and compactness and the fiber that the laser diode radiation should be imported coupling.
According to the present invention, this task solves like this: two edges of the beam parameter product that relates separately to the SA axis of banded reflector from the middle of diode laser structure towards diode laser structure especially reduce symmetrically about the middle part mirror image of diode laser structure.Scheme and/or replenish as an alternative, banded reflector can dislocation toward each other on its beam propagation direction.
According to the present invention, several at least in the banded reflector that is provided with adjacent to each other on the SA direction have the different beam parameter product that relates to the SA axis, and described beam parameter product is complementary for the input coupling speech of the optimization in the fiber of circle and the beam parameter product that relates to the SA axis of affiliated zone of fiber.For this reason, the beam parameter product that relates to the SA axis of banded reflector is preferred to be selected like this, makes these beam parameter products can optically form one at BPP
SA-BPP
FAThe beam parameter product of sub-circular in the plane.In other words, the output radiation of banded reflector and fiber carry out the BPP coupling on the SA direction, and thus, the laser diode radiation can be imported efficiently and be coupled in the fiber.Therefore, by changing the beam parameter product of banded reflector, can improve input power and/or efficient.This processing mode also can be diverted to for example oval fiber cross section of other fiber cross section.
Preferred banded reflector constitutes by single-frequency reflector, especially the multimode reflector that has the same laser wavelength respectively.At this, for the single-frequency reflector, promptly the reflector with a wavelength is interpreted as the reflector launched on identical bandwidth in the application's scope.
The beam parameter product of banded reflector can be regulated by its width and by the divergence of institute's emitted laser beam.In particularly preferred form of implementation, several at least in banded reflector width difference on the direction of its SA axis, and in other preferred implementing forms, several at least in the banded reflector have the different divergence of difference that relates to the SA axis.
One or more in the preferred banded reflector constitute by unique single transmit device respectively, thus, diode laser structure according to the present invention has the single transmit device of different in width, and these single transmit utensils have the identical or different divergence that relate to the SA axis.
One or more single transmit devices by a plurality of different in width or same widths respectively in also can preferred banded reflector constitute, and these single transmit devices can have the identical or different divergence that relates to the SA axis.The banded reflector of preferred especially different in width constitutes by the same single transmit device of varying number respectively, and wherein, in the case, the banded reflector of Gou Chenging has the identical divergence that relates to the SA axis like this.
Be coupled to situation in the fiber for laser diode radiation input, be provided with Optical devices in banded reflector back, these Optical devices make the laser beam conduct from banded reflector project on the circular fiber at the parallel laser beam band that optically is provided with adjacent to each other on the direction of its FA axis, wherein, the beam parameter product that relates to the SA axis of each laser beam band and the beam parameter product that relates to the SA axis of affiliated zone of fiber are complementary, in other words, laser beam band and its affiliated zone of fiber carry out the BPP coupling on the SA direction.
Description of drawings
Obtain other advantage of the present invention in accessory rights claim, specification and the accompanying drawing.Feature foregoing and that also will further describe also can distinguish itself or a plurality of combination in any ground is used.Shown in and described form of implementation should not be considered as finally enumerating, but have exemplary feature for description of the invention.Accompanying drawing is represented:
Diode laser bar of Fig. 1, this diode laser bar have according to first diode laser structure of the present invention, and this diode laser structure has the banded reflector of a plurality of different in width that are provided with adjacent to each other;
The different embodiment of Fig. 2 a to Fig. 2 c and the banded reflector of corresponding two different in width of the details II among Fig. 1;
Diode laser bar of Fig. 3, this diode laser bar have according to second diode laser structure of the present invention, and this diode laser structure has the banded reflector of a plurality of different divergence that are provided with adjacent to each other;
Fig. 4 is launched and is coupled to by means of the Optical devices input light path of the laser beam in the fiber by diode laser structure according to the present invention;
Fig. 5 is at BPP
SA-BPP
FAFrom the beam parameter product of banded reflector and laser beam band stacked on top of each other, the beam parameter product that relates to the SA axis of described laser beam band and the beam parameter product of affiliated zone of fiber are complementary in the plane;
Fig. 6 a to Fig. 6 e is according to the other bar structure of diode laser structure of the present invention; And
Fig. 7 stacks (" diode is folded ") by the diode that the diode laser bar that has respectively shown in Fig. 1 according to first diode laser structure of the present invention constitutes.
Embodiment
Diode laser bar shown in Fig. 11 has diode laser structure 2, and this diode laser structure has eight banded reflectors 3 that are provided with adjacent to each other abreast
1To 3
8, these banded reflectors are being orientated on the direction identical, be level in Fig. 1 and are being provided with to dislocation toward each other on the direction in this level respectively with its SA axis.Banded reflector 3
1To 3
8In severally on the SA direction, have different width w
1To w
8, wherein, banded reflector 3
1To 3
8Two edges of width from the middle of diode laser structure 2 towards diode laser structure 2 especially mirror image reduce symmetrically.Be suitable for: w
4=w
5＞w
3=w
6＞w
2=w
7＞w
1=w
8Zhong Yang reflector 3 for example
4, 3
5The width value be 50 to 500 μ m, especially 100 to 200 μ m.Emitter width is decreased to many 50%, especially at the most 30% towards the edge respectively from a reflector to another reflector.The decrease of emitter width from a reflector to another reflector not only can be relatively but also can be identical or different utterly.By banded reflector 3
1To 3
8Emitted laser beam 4
1To 4
8On the SA direction, has identical divergence θ
SACorrespondingly, the beam parameter product BPP that relates to the SA direction
SA(i)=w
SA(i) * θ
SA(i)=w
SA(i) * θ
SA(i=1 ..., 8) maximum and reduce at the middle part of diode laser structure 2 towards two edges of diode laser structure 2, in other words, be suitable for: BPP
SA(4)=BPP
SA(5)＞BPP
SA(3)=BPP
SA(6)＞BPP
SA(2)=BPP
SA(7)＞BPP
SA(1)=BPP
SA(8).And banded reflector 3
1To 3
8On the FA direction, has the banded reflector of identical height and these institute emitted laser beam 4
1To 4
8On the FA direction, has identical divergence.As following also to describe in detail with reference to Fig. 5, banded reflector 3
1To 3
8The beam parameter product BPP that relates to the SA axis
SA(1) to BPP
SA(8) select like this, make these beam parameter products can optically form one at BPP
SA-BPP
FAThe beam parameter product of sub-circular in the plane.
Preferred banded reflector 3
1To 3
8Single-frequency reflector by having the same laser wavelength respectively, especially multimode reflector constitute, and wherein, for the single-frequency reflector, promptly the reflector with a wavelength is interpreted as the reflector launched on identical bandwidth in the application's scope.
Fig. 2 shows the banded reflector 3 that is used for different in width shown in Fig. 1
3, 3
4Different embodiment.In Fig. 2 a, the banded reflector 3 of different in width
2, 3
3Respectively by a unique single transmit device 5
3, 5
4Constitute.As the alternative of the single transmit device that uses different in width, these single transmit devices also can form by the group with varying number reflector again.In Fig. 2 b, the banded reflector 3 of different in width
3, 3
4Respectively by the same of varying number and thus the single transmit device 6 of same widths constitute, thus, guarantee identical threshold current for whole banded reflectors.In Fig. 2 c, the banded reflector 3 of broad
4 Single transmit device 7,8 by two different in width constitutes, and this is to be described, suitable in having greater than the banded reflector of 200 μ m width.
Diode laser bar shown in Fig. 31 is with the difference of the diode laser bar of Fig. 1, at this, and the banded reflector 3 of She Zhiing adjacent to each other
1To 3
8In severally have a different divergence θ that relates separately to the SA axis
SA(1) to θ
SA(8) and whole banded reflector 3
1To 3
8Has identical width w.Banded reflector 3
1To 3
8Two edges of divergence from the middle of diode laser structure 2 towards diode laser structure 2 especially mirror image reduce symmetrically.Be suitable for: θ
SA(4)=θ
SA(5)＞θ
SA(3)=θ
SA(6)＞θ
SA(2)=θ
SA(7)＞θ
SA(1)=θ
SA(8).Correspondingly, the beam parameter product BPP that relates to the SA direction
SA(i)=w (i) * θ
SA(i)=w* θ
SA(i) (i=1 ..., 8) at the middle part of diode laser structure 2 maximum and towards two edges of diode laser structure 2 especially mirror image reduce symmetrically, in other words, be suitable for: BPP
SA(4)=BPP
SA(5)＞BPP
SA(3)=BPP
SA(6)＞BPP
SA(2)=BPP
SA(7)＞BPP
SA(1)=BPP
SA(8).As following also to describe in detail with reference to Fig. 5, banded reflector 3
1To 3
8The beam parameter product BPP that relates to the SA axis
SA(1) to BPP
SA(8) select like this, make these beam parameter products can optically form one at BPP
SA-BPP
FAThe beam parameter product of sub-circular in the plane.
Fig. 4 schematically shows by diode laser structure 2 emissions according to the present invention and by means of Optical devices 10 and imports the laser beam 4 that is coupled in the circular fiber 11
1To 4
8Light path.Optical devices 10 are with each laser beam 4
1To 4
8Convert a public laser beam to, its mode is from banded reflector 3
1To 3
8 Laser beam 4
1To 4
8As projecting at parallel laser beam band stacked on top of each other on its FA axis on the circular fiber 11.
Fig. 5 is at BPP
SA-BPP
FAIllustrated in the plane from banded reflector 3
1To 3
8And the beam parameter product BPP (1) of laser beam band stacked on top of each other is to BPP (8), and wherein, beam parameter product BPP (1) is complementary to the BPP (8) and the beam parameter product BPP (F) of the circle of circular fiber 11.For this reason, beam parameter product BPP (1) is complementary with the affiliated beam parameter product of affiliated zone of fiber on the SA axis to BPP (8).In other words, banded reflector 3
1To 3
8The beam parameter product BPP that relates to the SA axis
SA(1) to BPP
SA(8) select like this, make these beam parameter products can optically form fiber 11 at BPP
SA-BPP
FAThe beam parameter product BPP (F) of circle in the plane.
In the diode laser structure shown in Fig. 1 and Fig. 32, banded reflector 3
1To 3
8The output coupling surface be in one with respect to from banded reflector 3
1To 3
8 Laser beam 4
1To 4
8The rectangular common plane in the direction of propagation in.Fig. 6 a to Fig. 6 e shows the other diode laser structure 2 according to diode laser bar 1 of the present invention, wherein, and banded reflector 3
1To 3
8The output coupling surface be not to be in one with respect to from banded reflector 3
1To 3
8 Laser beam 4
1To 4
8The rectangular common plane in the direction of propagation in.
In Fig. 6 a and Fig. 6 b, banded reflector 3
1To 3
8The output coupling surface deviate from the end of exporting coupling surface with it and be arranged in the common plane, but different with length on the rectangular direction of FA direction with respect to its SA direction.Banded reflector 3
1To 3
8Two edges of length from the middle of diode laser structure 2 towards diode laser structure 2 increase (Fig. 6 a) or reduce (Fig. 6 b), thus, these banded reflectors 3
1To 3
8The output coupling surface from the stepped dislocation toward each other on the SA direction of the middle of diode laser structure 2 in both sides.
In Fig. 6 c and Fig. 6 d, banded reflector 3
1To 3
8In and respectively in both sides on SA direction stepped toward each other dislocation ground setting identical with length on the rectangular direction of FA direction with respect to its SA direction, thus, the output coupling surface of these banded reflectors is from middle stepped dislocation toward each other on the SA direction in both sides of diode laser structure 2.In Fig. 6 c, diode laser bar 1 is deviating from banded reflector 3
1To 3
8The side and the banded reflector 3 of output coupling surface
1To 3
8Correspondingly also be configured to steppedly, and in Fig. 6 d, diode laser bar 1 is deviating from banded reflector 3
1To 3
8The side of output coupling surface be not be configured to stepped.In Fig. 6 e, same banded reflector 3
1To 3
8Stepped dislocation toward each other ground is provided with on the SA direction respectively.
In Fig. 7, the diode laser bar 1 of diode structure 2 shown in a plurality of Fig. 1 of having is formed a diode and is stacked (" diode is folded ") 20, and wherein, each diode laser bar 1 is arranged between two heat sink 21.
Claims (15)
1. diode laser structure (2) has a plurality of banded reflectors (3 that are provided with adjacent to each other
1To 3
8), these banded reflectors are provided with to dislocation in orientation on the identical direction and on this direction toward each other with its SA axis, wherein, and these banded reflectors (3
1To 3
8) in several at least beam parameter product (BPP that relates separately to the SA axis
SA) difference, it is characterized in that: these banded reflectors (3
1To 3
8) the beam parameter product (BPP that relates separately to the SA axis
SA) two edges from the middle of this diode laser structure (2) towards this diode laser structure (2) especially reduce symmetrically about the middle part mirror image of this diode laser structure (2).
2. according to the diode laser structure of claim 1, it is characterized in that: these banded reflectors (3
1To 3
8) the beam parameter product (BPP that relates to the SA axis
SA) select like this, make these beam parameter products correspondingly optically to form one at BPP with fiber cross section, especially circle or oval-shaped fiber cross section
SA-BPP
FABe similar to the corresponding beam of beam parameter product in the plane with fiber.
3. according to the diode laser structure of claim 1 or 2, it is characterized in that: these banded reflectors (3
1To 3
8) the output coupling surface be in one with respect to from these banded reflectors (3
1To 3
8) laser beam (4
1To 4
8) rectangular plane, the direction of propagation in or these banded reflectors (3
1To 3
8) the output coupling surface in several at least stepped dislocation ground toward each other be provided with.
4. according to the diode laser structure of one of aforesaid right requirement, it is characterized in that: these banded reflectors (3
1To 3
8) constitute by single-frequency reflector, especially the multimode reflector that has the same laser wavelength respectively.
5. according to the diode laser structure of one of aforesaid right requirement, it is characterized in that: these banded reflectors (3
1To 3
8) in several at least on the direction of its SA axis the width difference.
6. according to the diode laser structure of claim 5, it is characterized in that: these banded reflectors (3
1To 3
8) width (w
1To w
8) two edges from the middle of this diode laser structure (2) towards this diode laser structure (2) especially reduce symmetrically about the middle part mirror image of this diode laser structure (2).
7. according to the diode laser structure of one of aforesaid right requirement, it is characterized in that: these banded reflectors (3
1To 3
8) in severally at least have a different divergence (θ of difference that relates to the SA axis
SA).
8. according to the diode laser structure of claim 7, it is characterized in that: these banded reflectors (3
1To 3
8) the divergence (θ that relates to the SA axis
SA) two edges from the middle of this diode laser structure (2) towards this diode laser structure (2) especially reduce symmetrically about the middle part mirror image of this diode laser structure (2).
9. according to the diode laser structure of one of aforesaid right requirement, it is characterized in that: these banded reflectors (3
1To 3
8) in one or more respectively by a unique single transmit device (5
3, 5
4) constitute.
10. according to the diode laser structure of one of aforesaid right requirement, it is characterized in that: these banded reflectors (3
1To 3
8) in one or morely constitute by a plurality of single transmit devices (6,7,8) respectively.
11. the diode laser structure according to claim 10 is characterized in that: the banded reflector (3 of different in width
1To 3
8) respectively single transmit device same widths, especially same (6) by varying number constitute.
12. the diode laser structure according to claim 10 is characterized in that: the banded reflector (3 of different in width
1To 3
8) respectively the single transmit device (7,8) by a plurality of different in width constitute.
13. the diode laser structure according to one of aforesaid right requirement is characterized in that: at these banded reflectors (3
1To 3
8) back is provided with Optical devices (10), these Optical devices make from these banded reflectors (3
1To 3
8) laser beam (4
1To 4
8) as projecting on the circular fiber (11) at the parallel laser beam band that optically is provided with adjacent to each other on the direction of its FA axis, wherein, the beam parameter product (BPP that relates to the SA axis of each laser beam band
SA) with the beam parameter product (BPP that relates to the SA axis of affiliated zone of fiber
SA) be complementary.
14. the diode laser structure according to one of aforesaid right requirement is characterized in that: these banded reflectors (3
1To 3
8) be arranged on the laser diode bar (1).
15. the diode laser structure according to claim 14 is characterized in that: a plurality of laser diode bar (1) stack into a diode and stack (20).
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP08002444A EP2088651A1 (en) | 2008-02-11 | 2008-02-11 | Diode laser array for creating diode laser output with optimised beam parameter products for fibre coupling |
| EP08002444.1 | 2008-02-11 | ||
| PCT/EP2009/000765 WO2009100845A1 (en) | 2008-02-11 | 2009-02-05 | Diode laser structure to generate diode laser radiation with optimized fiber coupling radiation parameter product |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101953039A true CN101953039A (en) | 2011-01-19 |
| CN101953039B CN101953039B (en) | 2012-06-27 |
Family
ID=39592005
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009801048081A Active CN101953039B (en) | 2008-02-11 | 2009-02-05 | Diode laser structure to generate diode laser radiation with optimized fiber coupling radiation parameter product |
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| Country | Link |
|---|---|
| US (1) | US8175130B2 (en) |
| EP (2) | EP2088651A1 (en) |
| JP (1) | JP5254364B2 (en) |
| CN (1) | CN101953039B (en) |
| WO (1) | WO2009100845A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112952549A (en) * | 2021-03-17 | 2021-06-11 | 深圳市星汉激光科技股份有限公司 | Semiconductor laser coupling system |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9229156B2 (en) * | 2011-07-07 | 2016-01-05 | Reald Inc. | Laser systems and methods |
| US9823480B2 (en) | 2012-02-22 | 2017-11-21 | TeraDiode, Inc. | Wavelength beam combining laser systems with micro-optics |
| US9690107B2 (en) | 2013-03-15 | 2017-06-27 | Trumpf Laser Gmbh | Device for wavelength combining of laser beams |
| WO2015153199A1 (en) * | 2014-03-29 | 2015-10-08 | Parviz Tayebati | Wavelength beam combining laser systems with micro-optics |
| CN105629390B (en) * | 2016-03-29 | 2018-12-11 | 武汉凌云光电科技有限责任公司 | A kind of slow axis underlying semiconductor laser and its manufacturing method |
| DE112018003816T5 (en) * | 2017-07-26 | 2020-04-16 | Panasonic Corporation | SEMICONDUCTOR LASER ELEMENT AND SEMICONDUCTOR LASER DEVICE |
| CN114556192A (en) * | 2019-08-14 | 2022-05-27 | 恩耐公司 | High brightness fiber coupled diode laser with rounded beam |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05110187A (en) * | 1991-10-15 | 1993-04-30 | Matsushita Electric Ind Co Ltd | Array type semiconductor laser and manufacture of the same |
| JPH06132610A (en) * | 1992-10-21 | 1994-05-13 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser array element and manufacture thereof |
| US5565693A (en) * | 1993-01-07 | 1996-10-15 | Nec Corporation | Semiconductor optical integrated circuits |
| US6240116B1 (en) * | 1997-08-14 | 2001-05-29 | Sdl, Inc. | Laser diode array assemblies with optimized brightness conservation |
| JP3930405B2 (en) * | 2002-03-19 | 2007-06-13 | 株式会社ジェイテクト | Laser concentrator |
| JP4226482B2 (en) * | 2003-02-03 | 2009-02-18 | 富士フイルム株式会社 | Laser beam multiplexer |
| US20040190580A1 (en) * | 2003-03-04 | 2004-09-30 | Bardia Pezeshki | High-yield high-precision distributed feedback laser based on an array |
| US20070195850A1 (en) | 2004-06-01 | 2007-08-23 | Trumpf Photonics Inc. | Diode laser array stack |
| US7260131B2 (en) * | 2005-01-14 | 2007-08-21 | Institut National D'optique | Symmetrization device and laser diode system provided with the same |
| CN1744395A (en) * | 2005-09-30 | 2006-03-08 | 北京工业大学 | Diode laser wavebeam reshaping microlens array |
| US20070116077A1 (en) * | 2005-11-22 | 2007-05-24 | Nlight Photonics Corporation | Vertically displaced stack of multi-mode single emitter laser diodes |
| JP2007214300A (en) * | 2006-02-09 | 2007-08-23 | Sony Corp | Semiconductor laser |
| JP2007324312A (en) * | 2006-05-31 | 2007-12-13 | Sony Corp | Semiconductor laser array and optical device |
| JP2008258515A (en) * | 2007-04-09 | 2008-10-23 | Sony Corp | Semiconductor laser device, laser module, and optical device |
-
2008
- 2008-02-11 EP EP08002444A patent/EP2088651A1/en not_active Withdrawn
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2009
- 2009-02-05 JP JP2010546239A patent/JP5254364B2/en active Active
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- 2009-02-05 WO PCT/EP2009/000765 patent/WO2009100845A1/en active Application Filing
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112952549A (en) * | 2021-03-17 | 2021-06-11 | 深圳市星汉激光科技股份有限公司 | Semiconductor laser coupling system |
Also Published As
| Publication number | Publication date |
|---|---|
| US8175130B2 (en) | 2012-05-08 |
| EP2240984B1 (en) | 2014-04-30 |
| WO2009100845A1 (en) | 2009-08-20 |
| US20110019710A1 (en) | 2011-01-27 |
| EP2088651A1 (en) | 2009-08-12 |
| JP5254364B2 (en) | 2013-08-07 |
| EP2240984A1 (en) | 2010-10-20 |
| CN101953039B (en) | 2012-06-27 |
| JP2011512039A (en) | 2011-04-14 |
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