CN101951456B - A kind of high-resolution linear image reading device - Google Patents
A kind of high-resolution linear image reading device Download PDFInfo
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Abstract
The invention discloses a kind of high-resolution linear image reading device, comprise the light source that can irradiate original copy, the lens arra that whole read range original copy reverberation being carried out focuses on is extended upwardly at the Vertical Square of original copy moving direction, the sensor chip of multiple energy receiver lens array converged light be arranged in a straight line, sensor chip surface is provided with photosensitive pixel light signal being converted to the signal of telecommunication of linear array arrangement, carry the substrate of sensor as aforementioned chip, and light-passing board sensor chip gap location being carried out to light adjustment arranged between substrate and lens, the photosensitive pixel that it is characterized in that in the certain limit of sensor chip two ends is uneven arrangement, the present invention can eliminate the missing image problem that gap when high-definition picture reads between sensor chip is caused, improve the quality of image reading.
Description
Technical field
The present invention relates to a kind of image read-out, is a kind of high-resolution linear image reading device specifically.
Background technology
Fig. 1 is the sectional drawing of existing linear image reading device, in figure, 1 is can send light and the line lighting source of uniform irradiation original copy, 2 extend upwardly at the Vertical Square of original copy moving direction the lens arra that whole read range original copy reverberation being carried out focuses on, 3 is multiple sensor chips for receiver lens array 2 converged light be arranged in a straight line, 4 is the sensor base plates carrying the sensor chip, 6 is the frameworks holding light source 1, lens arra 2, sensor base plate 4,5 is glass plates of the lift-launch original copy be arranged on framework 6, and 10 is original copy.
Fig. 2 is the structural representation of the sensor base plate of the lift-launch sensor chip of existing linear image reading device, a plurality of sensor chip 3 linearly arranges on substrate 4, sensor chip 3 is provided with the photosensitive pixel 30 of linear array arrangement on the surface, for converting the light signal received to the signal of telecommunication.The arrangement of the photosensitive pixel 30 on each sensor chip 3 is uniform, and its arrangement cycle is P.The size of P is determined by the density (resolution) of photosensitive pixel, and be such as the picture element density of 200DPI for resolution, the value of P is 0.127mm.Picture element density is higher, and the value of P is less, and when picture element density is 600DPI, the value of P only has 42 microns.
In above-mentioned image read-out, the light that light source 1 sends, through glass plate 5, be irradiated on the original copy 10 of outside, the word black region light on original copy 10 is absorbed, and in other white-based color region of original copy, light almost 100% to be reflected, these reverberation through glass plate 5, are collected by lens arra 2 again, are irradiated to the surface of the sensor chip 3 that sensor base plate 4 carries.The photosensitive pixel 30 that the surface of sensor chip 3 has linear array to arrange, these photosensitive pixels 30 convert the light signal received to the signal of telecommunication under the control of the circuit of chip internal, and export through overdrive circuit, outwards export as image (word) information.Original copy is movement constantly, and image information (word) described on it will be read continuously.
But in above-mentioned linear image reading device, owing to sensor base plate 4 being equipped with multiple sensor chip 3, and sensor chip 3 is linearly assembled on sensor base plate 4, certain assembly clearance Lgap is there is between sensor chip 3, therefore in the place that two sensor chips have a common boundary, the arrangement cycle P ' of pixel is different from the arrangement cycle P of normal pixel, the difference of P ' and P, impact is also existed on the picture quality read, and the higher impact of the resolution of linear image reading device is larger.
If during P '=P(low resolution), the pixel arrangement cycle of chip intersection arranges identical with normal pixel, illustrates that chip gap can not impact resolution (or picture quality).But when high-resolution, such as the high-resolution linear image reading device of 1200DPI, the cycle P of pixel arrangement is 21.2 microns, if and the gap of sensor chip is 80 microns in actual assembled process, then P ' is about 100 microns, i.e. P '=5P, that is the distance of 4 pixel sizes is about occupied in sensor chip gap, photosensitive pixel is not had within the scope of this when image reading, so the image information on the original copy corresponding to this scope cannot be read, the image of reading is made to lose integrality.And the gap of sensor chip is larger, the image information of loss is also more.
In order to reduce the loss of the image information that sensor chip gap is caused, between lens and sensor base plate, the light-passing board (Figure 10 of this patent) being provided with concaveconvex structure at sensor chip gap location is added in the patent of publication number CN1678012A, the light signal of chip gap location is imported among the close photosensitive pixel in chip end, although the light signal of chip gap location utilizes by this structure, but these light signals not to be reduced into particularly the image information at this place, but by these Signal averaging on neighbouring photosensitive pixel.For the image read, by the Signal averaging of sensor chip gap location on the photosensitive pixel of annex, although decrease the loss of image information, this method can cause the image of superposition place to produce distortion, does not also reach the object of really going back original image.
There is following problem in above-mentioned linear image reading device: there is gap during owing to assembling between sensor chip, adjacent image distortion be lost or be made to image information when image reading between chip gap can, especially for high-resolution image read-out, same chip gap, the quantity of corresponding photosensitive pixel is also more, and the distortion caused is also more serious.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, even if provide a kind of to there is gap between sensor chip, image information of also can intactly reducing makes the picture quality of reading that the high-resolution linear array image read-out of deterioration not occur.
The present invention can be reached by following measure:
A kind of high-resolution linear image reading device, comprise the light source that can irradiate original copy, the lens arra that whole read range original copy reverberation being carried out focuses on is extended upwardly at the Vertical Square of original copy moving direction, the sensor chip of multiple energy receiver lens array converged light be arranged in a straight line, sensor chip surface is provided with photosensitive pixel light signal being converted to signal of linear array arrangement, carry the sensor base plate of sensor as aforementioned chip, and light-passing board sensor chip gap location being carried out to light adjustment arranged between sensor base plate and lens arra, it is characterized in that the photosensitive pixel in the certain limit of sensor chip two ends is uneven arrangement.
Linear image reading device of the present invention, the arrangement cycle of the normal photosensitive pixel on sensor chip is P, and the arrangement cycle of the photosensitive pixel in the certain limit of chip end is less than P, and less the closer to arranging the cycle during chip end.The reduction in arrangement cycle also refers to that the area of photosensitive pixel is less.
Linear image reading device of the present invention, in the certain limit of sensor chip end, the quantity of the photosensitive pixel of uneven arrangement for add n pixel in original N number of pixel region, namely within the scope of original N*P, is arranged with N+n pixel.
Linear image reading device of the present invention, the photosensitive pixel of non-uniform area, sensor chip both ends is symmetric arrays.
Effect of the present invention is, width corresponding to the gap produce sensor chip when assembling is converted into the number of photosensitive pixel corresponding to institute's energy structure, then corresponding number is arranged on the region at the two ends of sensor chip, the picture element density of the subregion at sensor chip two ends is increased, use the light-passing board having a refractive power effect to sensor chip gap location the light signal being irradiated to sensor chip gap location to be refracted to the two ends of sensor chip simultaneously, the pixel newly increased by sensor chip two ends receives, thus intactly can retain the image information of sensor chip gap location, substantially increase the reading quality of image.
Accompanying drawing explanation.
Fig. 1 is the schematic cross-section of existing linear image reading device.
Fig. 2 is the sensor chip arrangement architecture schematic diagram of existing linear image reading device.
Fig. 3 is the schematic cross-section of the linear image reading device of the embodiment of the present invention 1.
Fig. 4 is the position relationship schematic diagram of the lens arra of the linear image reading device of the embodiment of the present invention 1, light-passing board, substrate.
Fig. 5 is the structural representation of the light-passing board of the linear image reading device of the embodiment of the present invention 1.
Fig. 6 is the structural representation in the anaclasis district of the light-passing board of the linear image reading device of the embodiment of the present invention 1.
Fig. 7 is the schematic diagram of the deflection angle of the light of light-passing board refracting sphere.
Fig. 8 is the structural representation of the sensor chip of the linear image reading device of the embodiment of the present invention 1.
Fig. 9 be the end of the sensor chip of the linear image reading device of the embodiment of the present invention 1 overlook enlarged diagram.
Figure 10 is the anaclasis district of the light-passing board of the linear image reading device of the embodiment of the present invention 1 and the location diagram of sensor chip.
Figure 11 is the structural representation in the anaclasis district of the light-passing board of the linear image reading device of the embodiment of the present invention 2.
Figure 12 be the end of the sensor chip of the linear image reading device of the embodiment of the present invention 4 overlook enlarged diagram.
Embodiment.
Below in conjunction with accompanying drawing, the invention will be further described.
Embodiment 1: Fig. 3 is the cross-section structure of the embodiment of the present invention 1, in figure, 1 is can send light and the line lighting source of uniform irradiation original copy, 2 is extend upwardly at the Vertical Square of original copy moving direction the lens arra that whole read range original copy reverberation being carried out focuses on, 3 is multiple sensor chips for receiver lens array 2 converged light be arranged in a straight line, 4 is the sensor base plates carrying the sensor chip, 6 is hold light source 1, lens arra 2, the framework of sensor base plate 4, 5 is glass plates of the lift-launch original copy be arranged on framework 6, 7 is for linear image reading device provides power supply, the socket of the picture signal that drive singal and outwards output are read, 8 is light-passing boards sensor chip gap location being carried out to anaclasis, 10 is original copy.
Fig. 4 is the position relationship schematic diagram of the lens arra of the linear image reading device of the embodiment of the present invention 1, light-passing board, sensor chip and sensor base plate.30 is photosensitive pixels that sensor chip surface linear array arranges, 80 is anaclasis districts carrying out anaclasis at sensor chip gap location that light-passing board 8 is arranged, adopt leg-of-mutton structure in the present embodiment, be arranged on the surface of sensor chip side, be positioned at the gap location of sensor chip, its arrangement cycle is identical with the arrangement cycle of sensor chip.Its function that all the other symbols are identical with Fig. 3 and Fig. 3 same or equivalent.
Fig. 5 is the schematic side view of the light-passing board of the linear image reading device of the embodiment of the present invention 1.Anaclasis district 80 is through the surface (vertical direction of sensor chip orientation) of light-passing board near sensor chip side.The arrangement cycle is arrangement cycle of A(sensor chip).
Fig. 6 is the structural representation in the anaclasis district of the light-passing board of the linear image reading device of the embodiment of the present invention 1.Light-passing board in the present invention is the transparent panel be made up of polypropylene material, and refractive index is 1.5, also can adopt other transparent material.Refracting sphere adopts leg-of-mutton structure in the present embodiment, and the width of refracting sphere is a, and the degree of depth is b.
What light source 1 sent be irradiated to, and original copy is collected by lens arra 2 by original copy reflection back reflection light, and reverberation is through to be irradiated to after lens arra 2 on light-passing board and through light-passing board directive sensor chip.When light is through light-passing board, there is no the local light of refracting sphere through vertical sand shooting after light-passing board to sensor chip surface, change through direction during light-passing board there being the local light of refracting sphere, the refractive index of light-passing board light is 1.5, and the refractive index of air is 1.0, so light deflects through the both sides of the direction in refracting sphere time to refracting sphere.
Fig. 7 is the deflection angle expression figure of the light of light-passing board refracting sphere, θ 1 is the incidence angle of light when the refracting sphere surface of light-passing board, and θ 2 passes the refraction angle during refracting sphere surface of light-passing board for light, α is the deflection angle of light.According to the refraction principle of light, n1Sin θ 1=n2Sin θ 2, because n1=1.5, n2=1.0, so, Sin θ 2=1.5Sin θ 1, and angle of deflection=θ 2-θ 1.According to the structure of light-passing board refracting sphere, angle of deflection can be obtained according to the value of a and b
Fig. 8 is the structural representation of the sensor chip of the embodiment of the present invention 1, and the size of sensor chip is length L is 18.27mm, and wide W and high H is 0.35mm, and resolution is 1200DPI.A sensor chip has 864 photosensitive pixels, the cycle P of photosensitive pixel is about 22 microns, is the photosensitive pixel of normal density arrangement in the middle part of sensor chip, the photosensitive pixel distribution after the increase density in the scope of sensor chip two ends N*P being.
Fig. 9 be the end of the sensor chip of the linear image reading device of the embodiment of the present invention 1 overlook enlarged diagram.In the middle part of sensor chip, photosensitive pixel is evenly distributed, and evenly distributed photosensitive pixel is of a size of X=20 micron, height Y=40 micron, is spaced apart 2 microns between pixel and pixel.Be the uneven arrangement district of photosensitive pixel within the scope of the N*P of sensor chip end, adopt N=8 in the present embodiment, the pixel arrangements of n=2, namely in the interval of original 8 photosensitive pixels, be arranged with 10 photosensitive pixels.
In the uneven arrangement district of photosensitive pixel, the arrangement cycle of each pixel or the size of photosensitive pixel are different, and reduce gradually from middle part to the end arranged cells cycle.Gap in the present embodiment between photosensitive pixel is changeless, identically with the gap of homogeneity range is 2 microns, and the height of photosensitive pixel is also identical with homogeneity range is 40 microns, and the change in arrangement cycle is reflected in the change of the width dimensions X of photosensitive pixel.
10 pixels are arranged in the scope of 176 microns (22*8=176) of original 8 pixels, the mean value in new arrangement cycle is 176/10=17.6 micron, if the aligned gaps of pixel is constant be still 2 microns, then the mean breadth of photosensitive pixel is 15.6 microns, compared with former pixel wide 20, reduce 4.4 microns.If the size of new photosensitive pixel is in the upper and lower even variation of mean value, then the scope of its change is 8.8 microns, because there are 10 pixels, so the variable quantity of the every one-level of pixel wide is 0.88 micron.Table 1 is width corresponding to 10 pixels in photosensitive pixel uneven arrangement district and arrangement cycle.
Table 1
| Pixel | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |
| X | 19.6 | 18.7 | 17.8 | 16.9 | 16.0 | 15.2 | 14.3 | 13.4 | 12.5 | 11.6 |
| P | 21.6 | 20.7 | 19.8 | 18.9 | 18.0 | 17.2 | 16.3 | 15.4 | 14.5 | 13.6 |
Figure 10 is the anaclasis district of the light-passing board of the linear image reading device of the embodiment of the present invention 1 and the location diagram of sensor chip, △ H is the spacing between light-passing board range sensor chip, Lgap is the gap between adjacent two sensor chips, the corresponding center in sensor chip gap, center in the anaclasis district 80 on light-passing board.The number n of the photosensitive pixel increased in the non-uniform area on sensor chip is relevant with the assembly clearance Lgap of sensor chip, and the number of pixels n of the little increase of Lgap is just few, otherwise Lgap is large, and the number of pixels n that need increase is just many.In the present embodiment, the gap of sensor chip is 80 microns, concerning the size being substantially equivalent to 4 photosensitive pixels the resolution of 1200DPI, increases by 2 photosensitive pixels because of each on the chip of this gap both sides.
In order to reduce the difficulty of packaging technology during actual assembled, also suitably can increase the gap between two chips, during as adopted the gap of 0.22mm, having the space of 10 pixel sizes, the chip of both sides respectively can increase by 5 pixels.
On distance △ H between light-passing board and sensor chip and light-passing board, (a and gap L gap b) and between sensor chip determines, in practical structures, △ H is more suitable in the scope of 0.5mm-1mm for the structure of refracting sphere.
The length (N*P) of the non-uniform area on sensor chip also with the structure of light-passing board glazing refracting sphere (a and b) and the gap L gap of chip determine, usually can be similar to and be determined by following formula.
N*P=（a-Lgap）/2
N*P is 176 microns in the present embodiment, and Lgap is 80 microns, and a is about 432 microns.
When the light that lens arra 2 is collected passes light-passing board, in the place through anaclasis district, because refracting sphere will correspond to the anaclasis of sensor chip gap location on the sensor chip of both sides to the refraction action of light, and owing to adding the pixel quantity corresponding to chip gap in the non-uniform area that arranges in the pixel of sensor chip, so the picture signal that the picture signal read at sensor chip near gaps and normal region are read is identical, prevent the loss of the picture signal of sensor chip gap location, it also avoid the distortion that the picture signal of surrounding is caused.
Embodiment 2, on light-passing board, refracting sphere is triangular structure in the aforementioned embodiment, also can adopt curved-surface structure, is the structural representation in the another kind of anaclasis district of the light-passing board of the linear image reading device of the embodiment of the present invention 2 as shown in figure 11.The structure of what this refracting sphere adopted is curved surface, also can adopt the refracting sphere structure of other structure, have same effect to the refraction of light.
Embodiment 3, in the aforementioned embodiment, the non-uniform area N*P of sensor chip have employed the length of 8 pixel period, have employed the cycle of 16 pixels in the present embodiment for (20+2) * 16=352 micron, sensor chip gap is still 80 microns, be equivalent to 4 pixel distances, the chip of every side adds 2 pixels, namely in the scope of 352 microns, 18 pixels are arranged, the mean value in new arrangement cycle is 352/18=19.6 micron, if the aligned gaps of pixel is constant is still 2, then the mean breadth of pixel is 17.6 microns, compared with former pixel wide 20, reduce 2.4 microns.If the size of new pixel is in the upper and lower even variation of mean value, then the scope of its change is 4.8 microns, because there are 18 pixels, so the variable quantity of the every one-level of pixel wide is 0.27 micron.Table 2 is arrangement cycle and the pixel size of each pixel of non-uniform area in the present embodiment.
Table 2
| Pixel | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |
| X | 19.9 | 19.6 | 19.3 | 19.0 | 18.8 | 18.5 | 18.2 | 18.0 | 17.7 |
| P | 21.9 | 21.6 | 21.3 | 21.0 | 20.8 | 20.5 | 20.2 | 20.0 | 19.7 |
| Pixel | 10 | 11 | 12 | 13 | 14 | 15 | 16 | 17 | 18 |
| X | 17.4 | 17.1 | 16.9 | 16.6 | 16.3 | 16.1 | 15.8 | 15.5 | 15.2 |
| P | 19.4 | 19.1 | 18.9 | 18.6 | 18.3 | 18.1 | 17.8 | 17.5 | 17.2 |
Embodiment 4, in the aforementioned embodiment, the size of the photosensitive pixel of the non-uniform area of sensor chip reduces from centre gradually to end, in the present embodiment, in non-uniform area, inner photosensitive pixel adopts the identical evenly distributed mode of size, but the size of its photosensitive pixel is different with normal region from the arrangement cycle.
Figure 12 is that enlarged drawing is overlooked in the end of the sensor chip of the present embodiment, the resolution of chip is 1200DPI, left part is the distribution of the photosensitive pixel of normal region, distribution period P is 22 microns, pixel wide X is 20 microns, and pixels tall Y is 40 microns, and right side is the pixel distribution of the non-uniform area of sensor chip end, inner in non-uniform area, the distribution of pixel is uniform.
The present embodiment still adopts the frame mode of embodiment 1, and in 8 pixel period, increase the arrangement mode of 2 pixels, therefore, be 15.6 microns at the width X1 of the photosensitive pixel of non-uniform area internal arrangement, and arrangement cycle P1 is 17.6 microns.
Embodiment 5; resolution is all adopted to be the sensor chip of 1200DPI in previous embodiment; method pixel quantity corresponding to sensor chip gap being joined sensor chip end of the present invention is also applicable to the sensor chip of other resolution, also belongs to protection category of the present invention.
Claims (4)
1. a high-resolution linear image reading device, comprise the light source that can irradiate original copy, the lens arra that whole read range original copy reverberation being carried out focuses on is extended upwardly at the Vertical Square of original copy moving direction, the sensor chip of multiple energy receiver lens array converged light be arranged in a straight line, sensor chip surface is provided with photosensitive pixel light signal being converted to the signal of telecommunication of linear array arrangement, carry the substrate of sensor as aforementioned chip, and light-passing board sensor chip gap location being carried out to light adjustment arranged between substrate and lens arra, the light-passing board of described sensor chip gap location is provided with anaclasis district, it is characterized in that the photosensitive pixel in the middle part of described sensor chip is evenly distributed, the photosensitive pixel at described sensor chip both ends is uneven arrangement or evenly distributed, and the arrangement cycle of the photosensitive pixel in the middle part of described sensor chip is greater than the arrangement cycle of the photosensitive pixel at described sensor chip both ends, the length of described sensor chip end depends on the gap between the structure of described light-passing board glazing refracting sphere and sensor chip, when the photosensitive pixel at described sensor chip both ends is uneven arrangement, the arrangement cycle of photosensitive pixel is less the closer to sensor chip end.
2. high-resolution linear image reading device according to claim 1, it is characterized in that when the photosensitive pixel at described sensor chip both ends is uneven arrangement, the photosensitive pixel of described sensor chip end is less the closer to the area of photosensitive pixel during chip end.
3. high-resolution linear image reading device according to claim 1, it is characterized in that the quantity of the photosensitive pixel of sensor chip end uneven arrangement for add n photosensitive pixel in original N number of photosensitive pixel region, namely within the scope of N*P, be arranged with N+n photosensitive pixel, cycle when wherein P refers to that photosensitive pixel in the middle part of described sensor chip is evenly distributed, number when N refers to that photosensitive pixel arranges by cycle P, n refers to the number of the photosensitive pixel increased within the scope of N*P.
4. high-resolution linear image reading device as claimed in any of claims 1 to 3, is characterized in that the arrangement of the photosensitive pixel at sensor chip both ends is symmetrical.
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| CN102437168A (en) * | 2011-11-12 | 2012-05-02 | 袁毅 | Image sensor with unevenly-arranged pixels |
| CN102905049A (en) * | 2012-10-18 | 2013-01-30 | 卡莱泰克图像系统（苏州）有限公司 | Scanner |
| KR20150084904A (en) * | 2012-12-06 | 2015-07-22 | 미쓰비시덴키 가부시키가이샤 | Image read-in device |
| US10348924B2 (en) * | 2015-12-16 | 2019-07-09 | Mitsubishi Electric Corporation | Light-receiving unit and image sensor |
| CN107566683B (en) * | 2017-09-01 | 2024-02-06 | 威海华菱光电股份有限公司 | Photoelectric conversion chip, image sensor, and method for manufacturing photoelectric conversion chip |
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| CN1678012A (en) * | 2004-03-31 | 2005-10-05 | 三菱电机株式会社 | Image sensor |
| CN1893524A (en) * | 2005-06-30 | 2007-01-10 | 兄弟工业株式会社 | Image-reading device |
| CN201830341U (en) * | 2010-10-13 | 2011-05-11 | 威海华菱光电有限公司 | High-resolution linear array image reading device |
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| JP2003101724A (en) * | 2001-09-25 | 2003-04-04 | Konica Corp | Image-reading apparatus and image-forming apparatus |
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| CN1678012A (en) * | 2004-03-31 | 2005-10-05 | 三菱电机株式会社 | Image sensor |
| CN1893524A (en) * | 2005-06-30 | 2007-01-10 | 兄弟工业株式会社 | Image-reading device |
| CN201830341U (en) * | 2010-10-13 | 2011-05-11 | 威海华菱光电有限公司 | High-resolution linear array image reading device |
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