CN201830341U - High-resolution linear array image reading device - Google Patents
High-resolution linear array image reading device Download PDFInfo
- Publication number
- CN201830341U CN201830341U CN 201020558775 CN201020558775U CN201830341U CN 201830341 U CN201830341 U CN 201830341U CN 201020558775 CN201020558775 CN 201020558775 CN 201020558775 U CN201020558775 U CN 201020558775U CN 201830341 U CN201830341 U CN 201830341U
- Authority
- CN
- China
- Prior art keywords
- light
- sensor chip
- image reading
- pixel
- reading device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Facsimile Heads (AREA)
Abstract
The utility model discloses a high-resolution linear array image reading device, comprising a light source, a lens array, a plurality of sensor chips, a substrate and a light-transmitting plate, wherein the light source can irradiate an original manuscript; the lens array extends to the whole reading range in the direction vertical to the moving direction of the original manuscript and can focus reflected light of the original manuscript; the sensor chips are arranged in a line and can receive convergent light of the lens array, and the surface of the sensor chip is provided with photosensitive pixels which are arranged in a linear-array manner and convert light signals into electric signals; the substrate is used for loading the sensor chips; and the light-transmitting plate is arranged between the substrate and lenses and carries out light adjustment on gaps among the sensor chips. The high-resolution linear array image reading device is characterized in that the photosensitive pixels in certain range at two ends of the sensor chips are arranged in a non-uniform manner. Due to the use of the high-resolution linear array image reading device, the problem of image loss caused by the gaps among the sensor chips when high-resolution images are read can be eliminated, so that the quality of image reading is improved.
Description
Technical field
The utility model relates to a kind of image read-out, is a kind of high-resolution linear image reading device specifically.
Background technology
Fig. 1 is the sectional drawing of existing linear image reading device, 1 is the line lighting source that can send light and uniform irradiation original copy among the figure, 2 lens arras that on the vertical direction of original copy moving direction, extend to whole read range and the original copy reverberation can be focused on, the 3rd, a plurality of sensor chips that are used for receiver lens array 2 light that converges that are arranged in a straight line, the 4th, the sensor base plate of lift-launch the sensor chip, the 6th, hold the framework of light source 1, lens arra 2, sensor base plate 4,5 are arranged on the glass plate of the lift-launch original copy on the framework 6, and 10 is original copy.
Fig. 2 is the structural representation of sensor base plate of the lift-launch sensor chip of existing linear image reading device, a plurality of sensor chips 3 are in substrate 4 upper edge linear array, sensor chip 3 surfaces are provided with the photosensitive pixel 30 that linear array is arranged, and the light signal that is used for receiving converts the signal of telecommunication to.The arrangement of the photosensitive pixel 30 on each sensor chip 3 all is that its arrangement cycle is P uniformly.The size of P for example is the picture element density of 200DPI for resolution by density (resolution) decision of photosensitive pixel, and the value of P is 0.127mm.Picture element density is high more, and the value of P is more little, and when picture element density was 600DPI, the value of P had only 42 microns.
In above-mentioned image read-out, the light that light source 1 sends, see through glass plate 5, shine on the original copy 10 of outside, the literal black region light on the original copy 10 is absorbed, and in other white undercolor region of original copy, light almost 100% is reflected, these reverberation pass glass plate 5 again, are collected by lens arra 2, shine the surface of the sensor chip 3 that carries on the sensor base plate 4.The photosensitive pixel 30 that has linear array to arrange on the surface of sensor chip 3, these photosensitive pixels 30 convert the light signal that receives to the signal of telecommunication under the control of the circuit of chip internal, and through overdrive circuit output, outwards export as image (literal) information.Original copy constantly moves, and the image information of being put down in writing on it (literal) will be read continuously.
But in above-mentioned linear image reading device, owing to be equipped with a plurality of sensor chips 3 on the sensor base plate 4, and sensor chip 3 is assembled on the sensor base plate 4 along rectilinear direction, there is certain assembly clearance Lgap between the sensor chip 3, therefore in place that two sensor chips have a common boundary, the arrangement cycle P ' of pixel is different with the arrangement cycle P of normal pixel, the difference of P ' and P, the picture quality that reads is existed influence, and the high more influence of the resolution of linear image reading device is big more.
If during P '=P(low resolution), it is identical with normal pixel arrangement that the pixel of chip intersection is arranged the cycle, illustrates that the chip gap can not impact resolution (or picture quality).But when high-resolution, for example for the high-resolution linear image reading device of 1200DPI, the cycle P that pixel is arranged is 21.2 microns, if and the gap of sensor chip is 80 microns in the actual assembled process, then P ' is about about 100 microns, be P '=5P, that is to say that the sensor chip gap occupies the distance of 4 pixel sizes approximately, when reading, image do not have photosensitive pixel in this scope, so can't read the image information on the pairing original copy of this scope, make the image that reads lose integrality.And the gap of sensor chip is big more, and the image information of losing is also just many more.
In order to reduce losing of the image information that causes in the sensor chip gap, between lens and sensor base plate, added the light-passing board (Figure 10 of this patent) that is provided with concaveconvex structure at the sensor chip gap location in the patent of publication number CN1678012A, the light signal of chip gap location is imported among the close photosensitive pixel in chip end, though this structure is utilized the light signal of chip gap location, but not these light signals are not reduced into particularly the image information at this place, but near the photosensitive pixel these signals have been added to.For the image that reads, the signal of sensor chip gap location is added on the photosensitive pixel of annex, though reduced losing of image information, this method can cause the image of stack place to produce distortion, does not also reach the purpose of really going back original image.
There is following problem in above-mentioned linear image reading device: because assembling the time exists the gap between the sensor chip, the adjacent image distortion can be lost or make to image information when image reads between the chip gap, especially for high-resolution image read-out, same chip gap, the quantity of pairing photosensitive pixel is also just many more, and the distortion that causes is also just serious more.
Summary of the invention
The purpose of this utility model is to overcome the deficiencies in the prior art, even provide a kind of to there being the gap between the sensor chip, the image information of also can intactly reducing makes the picture quality that reads that the high-resolution linear array image read-out of deterioration not take place.
The utility model can reach by following measure:
A kind of high-resolution linear image reading device, comprise the light source that can shine original copy, the lens arra that on the vertical direction of original copy moving direction, extends to whole read range and the original copy reverberation can be focused on, a plurality of energy receiver lens arrays that are arranged in a straight line converge the sensor chip of light, sensor chip surface is provided with the photosensitive pixel that light signal is converted to signal that linear array is arranged, carry the sensor base plate of sensor as aforementioned chip, and between sensor base plate and lens arra, be provided with the sensor chip gap location is carried out the light-passing board that light is regulated, it is characterized in that the photosensitive pixel right and wrong in the certain limit of sensor chip two ends are evenly distributed.
Linear image reading device of the present utility model, the arrangement cycle of the normal photosensitive pixel on the sensor chip is P, the arrangement cycle of the photosensitive pixel in the certain limit of chip end is less than P, and the cycle of arranging during the closer to the chip end is more little.The reducing of arrangement cycle is meant that also the area of photosensitive pixel is more little.
The quantity of the photosensitive pixel of non-homogeneous arrangement promptly is arranged with N+n pixel for increased n pixel in original N pixel region in the linear image reading device of the present utility model, sensor chip end certain limit in original N*P scope.
Linear image reading device of the present utility model, the photosensitive pixel of sensor chip two ends non-uniform area is a symmetric arrays.
Effect of the present utility model is, the pairing width in gap that sensor chip was produced in when assembling is converted into the number of the photosensitive pixel of institute's energy structure correspondence, then pairing number is arranged on the zone at the two ends of sensor chip, the picture element density of the subregion at sensor chip two ends is increased, the light signal that uses the light-passing board that the sensor chip gap location is had a refractive power effect will shine the sensor chip gap location simultaneously is refracted to the two ends of sensor chip, the pixel that is increased newly by the sensor chip two ends receives, thereby the image information that can intactly keep the sensor chip gap location has improved the reading quality of image greatly.
Description of drawings.
Fig. 1 is the schematic cross-section of existing linear image reading device.
Fig. 2 is the sensor chip arrangement architecture schematic diagram of existing linear image reading device.
Fig. 3 is the schematic cross-section of the linear image reading device of the utility model embodiment 1.
Fig. 4 is that lens arra, the light-passing board of the linear image reading device of the utility model embodiment 1, the position of substrate concern schematic diagram.
Fig. 5 is the structural representation of light-passing board of the linear image reading device of the utility model embodiment 1.
Fig. 6 is the structural representation in anaclasis district of light-passing board of the linear image reading device of the utility model embodiment 1.
Fig. 7 is the schematic diagram of deflection angle of the light of light-passing board refracting sphere
Fig. 8 is the structural representation of sensor chip of the linear image reading device of the utility model embodiment 1
Fig. 9 is the enlarged diagram of overlooking of the end of the sensor chip of the linear image reading device of the utility model embodiment 1.
Figure 10 is the anaclasis district of light-passing board of linear image reading device of the utility model embodiment 1 and the location diagram of sensor chip.
Figure 11 is the structural representation in another kind of anaclasis district of light-passing board of the linear image reading device of the utility model embodiment 2.
Figure 12 is the enlarged diagram of overlooking of the end of the sensor chip of the linear image reading device of the utility model embodiment 4.
Below in conjunction with accompanying drawing the utility model is further described.
Embodiment 1: Fig. 3 is the cross-section structure of the utility model embodiment 1,1 is the line lighting source that can send light and uniform irradiation original copy among the figure, the 2nd, the lens arra that on the vertical direction of original copy moving direction, extends to whole read range and the original copy reverberation can be focused on, the 3rd, a plurality of sensor chips that are used for receiver lens array 2 light that converges that are arranged in a straight line, the 4th, the sensor base plate of lift-launch the sensor chip, the 6th, hold light source 1, lens arra 2, the framework of sensor base plate 4,5 are arranged on the glass plate of the lift-launch original copy on the framework 6, the 7th, for linear image reading device provides power supply, the socket of the picture signal that drive signal and outside output are read, the 8th, to the light-passing board that the sensor chip gap location carries out anaclasis, 10 is original copy.
Fig. 4 is that the position of lens arra, light-passing board, sensor chip and the sensor base plate of the linear image reading device of the utility model embodiment 1 concerns schematic diagram.The 30th, the photosensitive pixel that the sensor chip surface linear array is arranged, the 80th, be provided with on the light-passing board 8 in anaclasis district that the sensor chip gap location carries out anaclasis, adopt leg-of-mutton structure in the present embodiment, be arranged near on the surface of sensor chip side, be positioned at the gap location of sensor chip, its arrangement cycle is identical with the arrangement cycle of sensor chip.Its function that all the other symbols are identical with Fig. 3 is identical with Fig. 3 or suitable.
Fig. 5 is the schematic side view of light-passing board of the linear image reading device of the utility model embodiment 1.Anaclasis district 80 is through the surface (vertical direction of sensor chip orientation) of light-passing board near the sensor chip side.The arrangement cycle is the arrangement cycle of A(sensor chip).
Fig. 6 is the structural representation in anaclasis district of light-passing board of the linear image reading device of the utility model embodiment 1.Light-passing board in the utility model is the transparent panel of being made by polypropylene material, and refractive index is 1.5, also can adopt other transparent material.Refracting sphere adopts leg-of-mutton structure in the present embodiment, and the width of refracting sphere is a, and the degree of depth is b.
Fig. 7 is the deflection angle presentation graphs of the light of light-passing board refracting sphere, and θ 1 is the incidence angle during through the refracting sphere of light-passing board surface for light, the refraction angle when θ 2 passes the refracting sphere surface of light-passing board for light, and α is the deflection angle of light.According to the refraction principle of light, n1Sin θ 1=n2 Sin θ 2, because n1=1.5, n2=1.0, so, Sin θ 2=1.5 Sin θ 1, and angle of deflection=θ 2-θ 1.According to the structure of light-passing board refracting sphere, can obtain angle of deflection according to the value of a and b
Fig. 8 is the structural representation of the sensor chip of the utility model embodiment 1, and the size of sensor chip is 18.27mm for length L, and wide W and high H are 0.35mm, and resolution is 1200DPI.864 photosensitive pixels are arranged on the sensor chip, and the cycle P of photosensitive pixel is about 22 microns, the photosensitive pixel that arrange for normal density at the sensor chip middle part, and the photosensitive pixel after the increase density that in the scope of sensor chip two ends N*P is distributes.
Fig. 9 is the enlarged diagram of overlooking of the end of the sensor chip of the linear image reading device of the utility model embodiment 1.At sensor chip middle part, photosensitive pixel is evenly distributed, and evenly distributed photosensitive pixel is of a size of the X=20 micron, and height Y=40 micron is spaced apart 2 microns between pixel and the pixel.Be the non-homogeneous alignment area of photosensitive pixel in the N*P scope of sensor chip end, adopt N=8 in the present embodiment, the pixel arrangement mode of n=2 promptly is arranged with 10 photosensitive pixels in the interval of original 8 photosensitive pixels.
In the non-homogeneous alignment area of photosensitive pixel, the arrangement cycle of each pixel or the size of photosensitive pixel are different, and reduce gradually from the middle part to the end arranged cells cycle.Gap between the photosensitive pixel is changeless in the present embodiment, identically with the gap of homogeneity range is 2 microns, and the height of photosensitive pixel is also identical with homogeneity range to be 40 microns, and the variation of arranging the cycle is reflected in the variation of the width dimensions X of photosensitive pixel.
In the scope of 176 microns (22*8=176) of 8 original pixels, arrange 10 pixels, the mean value in new arrangement cycle is the 176/10=17.6 micron, still be 2 microns if the aligned gaps of pixel is constant, then the mean breadth of photosensitive pixel is 15.6 microns, compare with former pixel width 20, reduced 4.4 microns.If the size of new photosensitive pixel is even variation about mean value, then the scope of its variation is 8.8 microns, because 10 pixels are arranged, so the variable quantity of each grade of pixel wide is 0.88 micron.Table 1 is the width and the arrangement cycle of 10 pixel correspondences of the non-homogeneous alignment area of photosensitive pixel.
Table 1
| |
1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |
| X | 19.6? | 18.7? | 17.8? | 16.9? | 16.0? | 15.2? | 14.3? | 13.4? | 12.5? | 11.6? |
| P | 21.6? | 20.7? | 19.8? | 18.9? | 18.0? | 17.2? | 16.3? | 15.4? | 14.5? | 13.6? |
Figure 10 is the anaclasis district of light-passing board of linear image reading device of the utility model embodiment 1 and the location diagram of sensor chip, △ H is the spacing between the light-passing board range sensor chip, Lgap is the gap between adjacent two sensor chips, and the center correspondence in the anaclasis district 80 on the light-passing board is in the center in sensor chip gap.The number n of the photosensitive pixel that increases in the non-uniform area on the sensor chip is relevant with the assembly clearance Lgap of sensor chip, and the number of pixels n of the little increase of Lgap is just few, otherwise Lgap is big, needs the number of pixels n that increases just many.The gap of sensor chip is 80 microns in the present embodiment, is equivalent to the size of 4 photosensitive pixels concerning the resolution of 1200DPI substantially, so respectively increases by 2 photosensitive pixels on the chip of both sides, gap.
In order to reduce the difficulty of packaging technology, also can suitably increase two gaps between the chip during actual assembled, when adopting the gap of 0.22mm, the space of 10 pixel sizes be arranged, can respectively increase by 5 pixels on the chip of both sides.
Gap L gap between structure apart from refracting sphere on △ H and the light-passing board between light-passing board and the sensor chip (a and b) and sensor chip determines that △ H is more suitable in the scope of 0.5mm-1mm in the practical structures.
The length of the non-uniform area on the sensor chip (N*P) is also determined with the structure (a and b) of light-passing board glazing refracting sphere and the gap L gap of chip, can be similar to by following formula usually and determine.
N*P=（a-Lgap）/2
N*P is 176 microns in the present embodiment, and Lgap is 80 microns, and a is about 432 microns.
When the light that lens arra 2 is collected passes light-passing board, in place through the anaclasis district, because refracting sphere will be corresponding to the anaclasis of sensor chip gap location to the sensor chip of both sides to the refraction action of light, and owing in the non-uniform area that the pixel of sensor chip is arranged, increased the pairing pixel quantity in chip gap, so the picture signal that read near picture signal that is read the sensor chip gap and normal region is identical, prevented the losing of picture signal of sensor chip gap location, also avoided to around the distortion that causes of picture signal.
Table 2
| |
1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |
| X | 19.9? | 19.6? | 19.3? | 19.0? | 18.8? | 18.5? | 18.2? | 18.0? | 17.7? |
| P | 21.9? | 21.6? | 21.3? | 21.0? | 20.8? | 20.5? | 20.2? | 20.0? | 19.7? |
| |
10 | 11 | 12 | 13 | 14 | 15 | 16 | 17 | 18 |
| X | 17.4? | 17.1? | 16.9? | 16.6? | 16.3? | 16.1? | 15.8? | 15.5? | 15.2? |
| P | 19.4? | 19.1? | 18.9? | 18.6? | 18.3? | 18.1? | 17.8? | 17.5? | 17.2? |
Embodiment 4, in the aforementioned embodiment, the size of the photosensitive pixel of the non-uniform area of sensor chip reduces to the end gradually from the centre, in the present embodiment, adopt the identical evenly distributed mode of size at the inner photosensitive pixel of non-uniform area, but the size of its photosensitive pixel is different with arrangement cycle and normal region.
Figure 12 is that enlarged drawing is overlooked in the end of the sensor chip of present embodiment, the resolution of chip is 1200DPI, left part is the distribution of the photosensitive pixel of normal region, distribution cycle P is 22 microns, pixel wide X is 20 microns, and pixels tall Y is 40 microns, and the right side is the pixel distribution of the non-uniform area of sensor chip end, in non-uniform area inside, the distribution of pixel is uniform.
Present embodiment still adopts the frame mode of embodiment 1, increases the arrangement mode of 2 pixels in 8 pixel period, therefore, is 15.6 microns at the width X1 of the photosensitive pixel of non-uniform area internal arrangement, and arranging cycle P1 is 17.6 microns.
Claims (6)
1. high-resolution linear image reading device, comprise the light source that can shine original copy, the lens arra that on the vertical direction of original copy moving direction, extends to whole read range and the original copy reverberation can be focused on, a plurality of energy receiver lens arrays that are arranged in a straight line converge the sensor chip of light, sensor chip surface is provided with the photosensitive pixel that light signal is converted to the signal of telecommunication that linear array is arranged, carry the substrate of sensor as aforementioned chip, and between substrate and lens arra, be provided with the sensor chip gap location is carried out the light-passing board that light is regulated, it is characterized in that photosensitive pixel in the certain limit of sensor chip two ends is non-homogeneous arrangement.
2. a kind of high-resolution linear image reading device according to claim 1, the arrangement cycle that it is characterized in that the photosensitive pixel of sensor chip is P, the arrangement cycle of the photosensitive pixel in the certain limit of chip end is less than P.
3. a kind of high-resolution linear image reading device according to claim 2, it is more little that the arrangement cycle that it is characterized in that the photosensitive pixel in the certain limit of sensor chip end is arranged the cycle during the closer to the chip end.
4. a kind of high-resolution linear image reading device according to claim 3, the area of photosensitive pixel is more little when it is characterized in that certain limit interior photosensitive pixel in sensor chip end the closer to the chip end.
5. a kind of high-resolution linear image reading device according to claim 4, the quantity that it is characterized in that the photosensitive pixel of non-homogeneous arrangement in the certain limit of sensor chip end promptly is arranged with N+n pixel for increased n pixel in original N pixel region in the N*P scope.
6. according to claim 2,3,4 or 5 described a kind of high-resolution linear image reading devices, it is characterized in that the arrangement of the photosensitive pixel in the certain limit of sensor chip both ends is symmetrically distributed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201020558775 CN201830341U (en) | 2010-10-13 | 2010-10-13 | High-resolution linear array image reading device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201020558775 CN201830341U (en) | 2010-10-13 | 2010-10-13 | High-resolution linear array image reading device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201830341U true CN201830341U (en) | 2011-05-11 |
Family
ID=43968854
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201020558775 Expired - Fee Related CN201830341U (en) | 2010-10-13 | 2010-10-13 | High-resolution linear array image reading device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201830341U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101951456A (en) * | 2010-10-13 | 2011-01-19 | 威海华菱光电有限公司 | High-resolution linear-array image reader |
| CN103929561A (en) * | 2014-04-30 | 2014-07-16 | 威海华菱光电股份有限公司 | Light-permeating plate for imaging sensor and imaging sensor |
| CN110034145A (en) * | 2019-04-23 | 2019-07-19 | 德淮半导体有限公司 | Imaging sensor and forming method thereof |
-
2010
- 2010-10-13 CN CN 201020558775 patent/CN201830341U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101951456A (en) * | 2010-10-13 | 2011-01-19 | 威海华菱光电有限公司 | High-resolution linear-array image reader |
| CN101951456B (en) * | 2010-10-13 | 2015-12-16 | 威海华菱光电股份有限公司 | A kind of high-resolution linear image reading device |
| CN103929561A (en) * | 2014-04-30 | 2014-07-16 | 威海华菱光电股份有限公司 | Light-permeating plate for imaging sensor and imaging sensor |
| CN110034145A (en) * | 2019-04-23 | 2019-07-19 | 德淮半导体有限公司 | Imaging sensor and forming method thereof |
| CN110034145B (en) * | 2019-04-23 | 2021-09-14 | 德淮半导体有限公司 | Image sensor and forming method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101951456A (en) | High-resolution linear-array image reader | |
| US6268600B1 (en) | Linear illumination device | |
| EP1104163A2 (en) | Linear illumination device | |
| CN102829879B (en) | Infrared imaging detection chip integrated with liquid crystal optically-controlled array and area array photosensitive structure | |
| CN203747745U (en) | High light-concentrated solar lighting module group | |
| CN1971948A (en) | Sunbeams concentration lenses, process and apparatus for solar photovoltaic generator using concept of superposition | |
| CN101943765B (en) | Condenser lens, multocular lens condenser and multocular condenser solar cell assembly | |
| CN201830341U (en) | High-resolution linear array image reading device | |
| CN101452084A (en) | Erecting equal-magnification lens array plate | |
| CN101813269A (en) | Led light source and image reading apparatus | |
| US20120006384A1 (en) | Optical layer for light control type solar photovoltaic module, light control type solar photovoltaic module, and light control type solar photovoltaic panel | |
| CN103024305A (en) | Improved pixel array | |
| CN114294610A (en) | Natural light homogenization lighting device and method based on positive combination of double lenses | |
| CN114321820A (en) | Natural light homogenization lighting device and method based on double-lens negative-positive combination | |
| CN201812046U (en) | Rodlike lens array and image reading device comprising same | |
| CN102253051A (en) | System for detecting defects of solar cell by using line scanning detector | |
| CN2457579Y (en) | Infrared planar focal plane detector | |
| CN101783855A (en) | Contact-type image sensor | |
| CN104580806A (en) | Image reader | |
| CN201830340U (en) | Contact image sensor | |
| CN101950039B (en) | Rod-shaped lens array and image reading device therefrom | |
| CN201479235U (en) | Image reading device | |
| US20140048135A1 (en) | Method and apparatus for forming an image having a uniform flux density on a solar cell | |
| CN204334723U (en) | Cis | |
| CN101783854B (en) | Image reading device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: WEIHAI HUALING OPTO-ELECTRONICS CO., LTD. Free format text: FORMER NAME: WEIHAI HUALING OPTOELECTRONIC CO., LTD. |
|
| CP01 | Change in the name or title of a patent holder |
Address after: 264209 Weihai high tech Industrial Development Zone, Shandong Torch Road, No. 159 Patentee after: Weihai Hualing Opto-electronics Co.,Ltd. Address before: 264209 Weihai high tech Industrial Development Zone, Shandong Torch Road, No. 159 Patentee before: Weihai Hualing Optoelectronic Co., Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110511 Termination date: 20181013 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |