CN101951146B - High pressure pulse modulator and modulation method thereof for steep falling edge and low power consumption plasma immersion ion implantation - Google Patents
High pressure pulse modulator and modulation method thereof for steep falling edge and low power consumption plasma immersion ion implantation Download PDFInfo
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- CN101951146B CN101951146B CN2010102891657A CN201010289165A CN101951146B CN 101951146 B CN101951146 B CN 101951146B CN 2010102891657 A CN2010102891657 A CN 2010102891657A CN 201010289165 A CN201010289165 A CN 201010289165A CN 101951146 B CN101951146 B CN 101951146B
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Abstract
The invention relates to a high pressure pulse modulator and a modulation method thereof for steep falling edge and low power consumption plasma immersion ion implantation, which belongs to the technical field of pulse power and solves the problem of long falling edge of the output pulse of the traditional high pressure pulse modulator for plasma immersion ion implantation. A high pressure pulse is modulated by using a vacuum electron tube as a main switch, a charging process of a high pressure impulse capacitor is controlled by using a charging IGBT (Insulated Gate Bipolar Translator) series switch, and the power consumption on a charging current-limiting resistor is eliminated. When the high pressure pulse is cut off, the drop-down IGBT series switch is switched on, charges remained in a load capacitor and a parasitic capacitor can quickly flow through a discharging current-limiting device and the drop-down IGBT series switch to be released so that the falling edge of the output high pressure pulse is greatly reduced. The invention is used for accurately controlling the high pressure pulse in a plasma immersion ion implantation process.
Description
Technical field
The plasma immersion ion that the present invention relates to a kind of steep trailing edge low-power consumption injects with high voltage pulse modulator and modulator approach, belongs to the Pulse Power Techniques field.
Background technology
The plasma immersion ion implantation technique is a kind of advanced person's a process for modifying surface, causes people's extensive concern in recent years.In the plasma immersion ion implantation process, processed workpiece is placed in the vacuum chamber, excites the generation plasma by external plasma sources in the vacuum chamber; On processed workpiece, apply negative high voltage pulse; Because the mass discrepancy of electronics and ion in the plasma, electronics is ostracised away from workpiece rapidly, and ion is static relatively; Around workpiece, just form plasma pressure drop district, i.e. a plasma sheath layer district like this.Ion in the sheath layer obtains enough energy and injects surface of the work under the acceleration of sheath layer voltage, with the surface of the work atom complicated physics and chemical action takes place, and finally reaches the purpose to material modification.
In the plasma immersion ion injection technology, the performance of high voltage pulse modulator has determined to handle the surface quality of back workpiece to a great extent, for example: the injection degree of depth of ion, implantation homogeneity etc.The plasma immersion ion injection technology requires power supply can stablize edge, output steep-sided pulse front and back, the little high-voltage pulse of pulse flat-top pressure drop, and optimal high-voltage pulse waveform is a square wave.In the actual pulse power-supply device, because the existence of some parasitic parameters in load capacitive and the loop can not obtain desirable square-wave voltage waveform.
The power supply of plasma immersion ion injection at present still is more employing electron tube pattern high voltage pulse modulator; As shown in Figure 1; Be a kind of structural representation that adopts the high-voltage pulse power source of radio tube modulation, it can obtain the high-voltage pulse output of bearing through the break-make of control radio tube in load; The output voltage waveforms shape is as shown in Figure 2, because loop parasitic capacitance C
RExistence, cause the rising of voltage pulse output and descend all needing a period of time, i.e. rising edge t shown in Fig. 2
rWith trailing edge t
fThere are two difficult problems in such power supply: at first be the energy loss problem: like Fig. 1, because charging current limiter resistance R in the charging process
1Pull down resistor R with the control trailing edge
TExistence, cause consuming bigger in ohmically energy consumption.For example, when the output voltage of power supply is 50kV, pulse duty factor is 5%, pull down resistor R
TDuring for 20k Ω, single consumption at pull down resistor R
TOn power 6.25kW is just arranged; Next is that trailing edge is oversize: because the existence of some parasitic parameters in load capacitive and the loop causes the pulse trailing edge very long.Long pulse trailing edge article on plasma immersion ion injection process is very disadvantageous, for example introduces low energy ion, and splash effect makes modified layer inject very difficult controls such as the degree of depth.People such as D.T.K.Kwok have calculated [list of references D.T.K.Kwok in the plasma immersion ion implantation process; M.M.M.Bilek, D.R.McKenzie, et al.Appl.Phys.Lett.Vol.82 (12): 1827; 2003]; The percentage composition of the low energy ion that the pulse different phase is introduced, find that wherein 24% low energy ion is from the pulse trailing edge during, this is disadvantageous to surface quality control of injecting modified layer.If reduce pull down resistor R
T, the trailing edge of output voltage waveforms is reduced, but make energy consumption too big, therefore adopt the circuit structure of this high-voltage pulse power source shown in Figure 1, be difficult to accomplish to make the trailing edge of output voltage waveforms very short.The people such as Yukimura of Japan propose to adopt the circuit structure of two hard tube switches (radio tube) modulation high-voltage pulse in document; Realized control [list of references Ken Yukimura through second electron tube discharge to the high-voltage pulse trailing edge; Tomoyuki Muraho.Nucl.Instr.and Meth.in Phys.Res.B Vol.206:791,2003].But the maximum shortcoming of this method is: used a radio tube more, on the one hand the power supply cost has significantly been improved, also increased the complexity of control circuit on the other hand.
Summary of the invention
The objective of the invention is provides a kind of plasma immersion ion of steep trailing edge low-power consumption to inject with high voltage pulse modulator and modulator approach for the plasma immersion ion that solves existing employing injects the long problem of trailing edge with high voltage pulse modulator output pulse.
The plasma immersion ion of a kind of steep trailing edge low-power consumption of the present invention injects uses high voltage pulse modulator; It comprises DC high-voltage power supply; The charging current limiter inductance; Charging IGBT tandem tap; Current spike suppresses inductance; The load current-limiting resistance; The vacuum tetrode; Filament supply; High-voltage pulse capacitor; High voltage silicon stack; Drop-down discharge current-limiting resistance; Drop-down IGBT tandem tap; Parasitic capacitance; Two grid power supplys; The driving primary signal unit of charge switch; Synchronous isolated drive circuit charges; Pulse delay circuit; The electron tube drive circuit; Driving primary signal unit that pulls down switch and drop-down synchronous isolated drive circuit
The output of DC high-voltage power supply connects an end of charging current limiter inductance, and the other end of charging current limiter inductance connects the collector electrode of charging IGBT tandem tap, the high-voltage pulse capacitor of connecting between the emitter of charging IGBT tandem tap and the load incoming end of modulator,
The series current spike suppresses inductance and load current-limiting resistance between the emitter of charging IGBT tandem tap and the anode of vacuum tetrode; Filament supply is the cathode filament power supply of this vacuum tetrode, and cathode filament one end of vacuum tetrode connects the load earth terminal of modulator;
The load incoming end of modulator connects the positive pole of high voltage silicon stack, and the negative pole of high voltage silicon stack connects the load earth terminal of modulator,
Parasitic capacitance and high voltage silicon stack are in parallel,
The load incoming end of modulator connects an end of drop-down discharge current-limiting resistance, and the other end of drop-down discharge current-limiting resistance connects the emitter of drop-down IGBT tandem tap, and the collector electrode of drop-down IGBT tandem tap connects the load earth terminal of modulator;
The charging control signal output of the driving primary signal unit of charge switch connects the charging control signal input of the synchronous isolated drive circuit of charging, and the signal output part of the synchronous isolated drive circuit that charges connects the grid of charging IGBT tandem tap,
The charging control signal output of the driving primary signal unit of charge switch also connects the signal input part of pulse delay circuit; The electron tube drive signal output of delay circuit connects the driving signal input of electron tube drive circuit; The output of electron tube drive circuit connects a grid input of vacuum tetrode; Be used for controlling the break-make of vacuum tetrode, the output of two grid power supplys connects two grid inputs of vacuum tetrode;
The drop-down drive signal output of delay circuit connects the driving signal input of the driving primary signal unit that pulls down switch; The output of the driving primary signal unit that pulls down switch connects the input of drop-down synchronous isolated drive circuit, and the output of drop-down synchronous isolated drive circuit connects the driving signal input of drop-down IGBT tandem tap.
The plasma immersion ion that the present invention is based on the steep trailing edge low-power consumption of said apparatus injects the modulator approach with high-voltage pulse, and it is connected load between the load earth terminal of load incoming end and modulator of modulator,
Its modulator approach is: the driving primary signal unit of charge switch produces rectangular pulse, is used for control charging IGBT tandem tap and realizes charging control; While is under the triggering of the trailing edge of this rectangular pulse; Pulse delay circuit is output tube driving pulse, drop-down driving pulse respectively; Wherein said drop-down driving pulse is by the trailing edge triggering for generating of electron tube driving pulse, and said electron tube driving pulse is used to drive the electron tube drive circuit and produces the negative high voltage pulse signal; Said drop-down driving pulse is respectively applied for the on/off that drives drop-down IGBT tandem tap, realizes the continuous impulse modulation.
Advantage of the present invention is: the present invention relates to the process that residual charge discharges in process that a kind of IGBT of employing tandem tap controls high-voltage pulse capacitor charging respectively and load capacitance and the parasitic capacitance, it has effectively reduced the trailing edge and the power supply energy consumption of high-voltage pulse.It adopts radio tube to modulate high-voltage pulse as main switch, with the charging process of charging IGBT tandem tap control high-voltage pulse capacitor, has eliminated in the prior art in the ohmically power consumption of charging current limiter; When closing, the vacuum electron tube has no progeny; Drop-down IGBT tandem tap is open-minded; Can flow through the rapidly equivalent resistance and the drop-down IGBT tandem tap of drop-down discharge current-limiting resistance and load of residual electric charge discharges in the equivalent capacity of load and the parasitic capacitance; Reduced the dependence of high-voltage pulse trailing edge time, made that trailing edge reduces greatly load.The waveform trailing edge of pulse that pulse modulator according to the invention forms is short, and waveform is more regular, and is with low cost, is applicable to the accurate control in the plasma immersion ion injection technology.
The present invention utilizes IGBT tandem tap technology control impuls trailing edge, is applied in the plasma immersion ion injection technology, can improve power-efficient greatly.
Description of drawings
Fig. 1 is the structural representation of the high voltage pulse modulator of available technology adopting radio tube modulation;
Fig. 2 is the output voltage waveform of high voltage pulse modulator shown in Figure 1, t among the figure
rBe rising edge time, t
fBe the trailing edge time;
Fig. 3 is the electrical block diagram of apparatus of the present invention;
Fig. 4 is apparatus of the present invention output waveform sketch map;
Fig. 5 is the sequential chart of driving pulse among the present invention.
Embodiment
Embodiment one: this execution mode is described below in conjunction with Fig. 1, Fig. 3 to Fig. 5; The plasma immersion ion of the said steep trailing edge low-power consumption of this execution mode injects uses high voltage pulse modulator, and it comprises that DC high-voltage power supply 1, charging current limiter inductance 2, charging IGBT tandem tap 3, current spike suppress inductance 4, load current-limiting resistance 5, vacuum tetrode 6, filament supply 7, high-voltage pulse capacitor 8, high voltage silicon stack 9, drop-down discharge current-limiting resistance R
p, drop-down IGBT tandem tap 10, parasitic capacitance C
R, the synchronous isolated drive circuit of two grid power supplys 11, the driving primary signal unit 12 of charge switch, charging 13, pulse delay circuit 14, electron tube drive circuit 15, the driving primary signal unit 16 that pulls down switch and drop-down synchronous isolated drive circuit 17,
The output of DC high-voltage power supply 1 connects an end of charging current limiter inductance 2; The other end of charging current limiter inductance 2 connects the collector electrode of charging IGBT tandem tap 3; The high-voltage pulse capacitor 8 of connecting between the emitter of charging IGBT tandem tap 3 and the load incoming end A of modulator
The series current spike suppresses inductance 4 and load current-limiting resistance 5 between the emitter of charging IGBT tandem tap 3 and the anode of vacuum tetrode 6; Filament supply 7 is the cathode filament power supply of this vacuum tetrode 6, and cathode filament one end of vacuum tetrode 6 connects the load earth terminal T of modulator;
The load incoming end A of modulator connects the positive pole of high voltage silicon stack 9, and the negative pole of high voltage silicon stack 9 connects the load earth terminal T of modulator,
Parasitic capacitance C
RBe in parallel with high voltage silicon stack 9,
The load incoming end A of modulator connects drop-down discharge current-limiting resistance R
pAn end, drop-down discharge current-limiting resistance R
pThe other end connect the emitter of drop-down IGBT tandem tap 10, the collector electrode of drop-down IGBT tandem tap 10 connects the load earth terminal T of modulator;
The charging control signal output of the driving primary signal unit 12 of charge switch connects the charging control signal input of the synchronous isolated drive circuit 13 of charging, and the signal output part of the synchronous isolated drive circuit 13 that charges connects the grid of charging IGBT tandem tap 3,
The charging control signal output of the driving primary signal unit 12 of charge switch also connects the signal input part of pulse delay circuit 14; The electron tube drive signal output of delay circuit 14 connects the driving signal input of electron tube drive circuit 15; The output of electron tube drive circuit 15 connects a grid input of vacuum tetrode 6; Be used for controlling the break-make of vacuum tetrode 6, the output of two grid power supplys 11 connects two grid inputs of vacuum tetrode 6;
The drop-down drive signal output of delay circuit 14 connects the driving signal input of the driving primary signal unit 16 that pulls down switch; The output of the driving primary signal unit 16 that pulls down switch connects the input of drop-down synchronous isolated drive circuit 17, and the output of drop-down synchronous isolated drive circuit 17 connects the driving signal input of drop-down IGBT tandem tap 10.
This execution mode is connected in load 19 between the load earth terminal T of load incoming end A and modulator of modulator in use, and load 19 can equivalence be equivalent capacity C
LWith equivalent resistance R
LThe form that is in parallel adopts the break-make of the driving primary signal unit 12 control charging IGBT tandem taps 3 of charge switch, comprising to the adjusting in charging interval and the amplification of pulse signal power etc.; Adopt pulse delay circuit 14 to control the sequential between charging IGBT tandem tap 3, radio tube 6 and the drop-down IGBT tandem tap 10; The driving primary signal unit 16 that pulls down switch is used for controlling the break-make of drop-down IGBT tandem tap 10, comprising the amplification of drop-down time adjusting and pulse power; Electron tube drive circuit 15 is realized the break-make control to radio tube 6, and it has finally realized the adjustable continuously of high-voltage pulse width and frequency, and radio tube 6 is a kind of High-tension Switch Devices, can turn on and off high pressure; The charging current limiter inductance 2 IGBT tandem tap 3 that can suppress to charge is opened too high charging current of moment; Charging IGBT tandem tap 3 is used for controlling the charging of high-voltage pulse capacitor 8; Load end and DC high-voltage power supply 1 gets in touch in the time of simultaneously can blocking radio tube 6 again and open; After high-voltage pulse capacitor 8 energy storage, really connect powering load; Drop-down synchronous isolated drive circuit 17 offers drop-down IGBT tandem tap 10 synchronous isolation drive signals, can adopt the magnetic coupling to isolate; Drop-down discharge current-limiting resistance R
p, can limit the electric current in drop-down IGBT tandem tap 10 discharge processes.
The course of work: when charging IGBT tandem tap 3 was opened, DC high-voltage power supply 1 gave high-voltage pulse capacitor 8 chargings through charging current limiter inductance 2 and high voltage silicon stack 9, and charging IGBT tandem tap 3 closes the charging process of having no progeny to be finished.In this process, use charging IGBT tandem tap 3 to connect with charging current limiter inductance 2 and replace the charging current limiter resistance in the conventional power source, the charging process of control high-voltage pulse capacitor 8 has reduced conventional power source such as consuming in the charging current limiter resistance R among Fig. 1
1On energy, reduced the inner power consumption of power supply.When vacuum electron tube 6 was opened, high-voltage pulse capacitor 8 suppressed inductance 4, load current-limiting resistance 5 and load 19 discharges through current spike, promptly in load, produces negative high voltage.When closing, vacuum electron tube 6 has no progeny the conducting immediately of drop-down IGBT tandem tap 10, the equivalent capacity C in the load 19
LWith parasitic capacitance C
RMiddle charge stored is through drop-down discharge current-limiting resistance R
pWith the equivalent resistance R in the load 19
LTime constant (R is depended in discharge its discharge time
p//R
L) (C
L//C
R), and during high-voltage pulse is arranged, because drop-down IGBT tandem tap 10 turn-offs the drop-down discharge current-limiting resistance R of this moment
pConsumed power not.The control circuit of two grid power supplys 11 of radio tube and electron tube drive circuit 15 composition radio tubes 6 break-makes.The break-make sequential of radio tube 6, charging IGBT tandem tap 3 and drop-down IGBT tandem tap 10 is all to be accomplished by pulse delay circuit 14, does not open simultaneously between any two.
Embodiment two: this execution mode is described below in conjunction with Fig. 3; This execution mode is for the difference with execution mode one; It also comprises drop-down IGBT equalizer circuit 18, and drop-down IGBT equalizer circuit 18 is connected in parallel between the emitter and collector electrode of drop-down IGBT tandem tap 10.Other composition and annexation are identical with execution mode one.
Embodiment three: this execution mode is described below in conjunction with Fig. 3; This execution mode is further specifying execution mode two; Said drop-down synchronous isolated drive circuit 17 adopts pulse transformer; The primary coil of pulse transformer connects the output of the driving primary signal unit 16 that pulls down switch, and pulse transformer has a plurality of secondary coils;
Drop-down IGBT tandem tap 10 is composed in series by a plurality of IGBT low tension switch Z,
Drop-down IGBT equalizer circuit 18 is made up of a plurality of capacitance-resistance bleeder circuits, and each capacitance-resistance bleeder circuit is in parallel by divider resistance R and dividing potential drop capacitor C and forms,
Said each parallel connection of secondary windings between the collector electrode and grid of an IGBT low tension switch Z, a parallelly connected capacitance-resistance bleeder circuit between the collector electrode of each IGBT low tension switch Z and the emitter.Other composition and annexation are identical with execution mode two.
Drop-down IGBT tandem tap 10 described in this execution mode is composed in series by a plurality of IGBT low tension switch Z, and it is used to discharge the equivalent capacity C of load 19
LWith parasitic capacitance C
RIn residual electric charge, shorten trailing edge time of high-voltage pulse; Drop-down IGBT equalizer circuit 18 is made up of a plurality of capacitance-resistance bleeder circuits, is used for guaranteeing all pressures to each IGBT low tension switch Z, protects it not by over-voltage breakdown.
In this execution mode a plurality of IGBT low tension switch Z are in series and form drop-down IGBT tandem tap 10; Be because single IGBT low tension switch Z can't bear the high pressure in the whole load; For example; When the maximum output voltage of said high voltage pulse modulator is 30kV, select 30 withstand voltage IGBT low tension switch Z series connection dividing potential drops for use for 1200V.Because the difference of the parasitic parameter between each IGBT low tension switch Z, and the asynchronism of drive signal often causes the unbalanced-voltage-division of each IGBT low tension switch Z, can cause IGBT low tension switch Z over-voltage breakdown to damage when serious.Therefore capacitance-resistance bleeder circuit of parallel connection all on each IGBT low tension switch Z is guaranteed all pressures of each IGBT low tension switch Z.Among the present invention the internal structure of charging IGBT tandem tap 3 can with the structure similar of drop-down IGBT tandem tap 10.
Embodiment four: this execution mode is the further qualification to execution mode three, and the span of said dividing potential drop capacitor C is 10nf-1000nf.Other composition and annexation are identical with execution mode three.
The size of dividing potential drop capacitor C is very big to the dynamic voltage balancing influence of each IGBT low tension switch Z in the drop-down IGBT equalizer circuit 18; The too little DeGrain of all pressing; Too greatly not only can cause IGBT low tension switch Z discharging current excessive, and the electrical power that consumes also can increase thereupon.Therefore the range of choice with the dividing potential drop capacitor C is 10nf-1000nf.
Embodiment five: this execution mode is the further qualification to execution mode one, said drop-down discharge current-limiting resistance R
pBe adjustable resistance, its resistance adjustable extent is 100 Ω-50k Ω.Other composition and annexation are identical with execution mode one.
In this execution mode, in the scope that the through-current capability of drop-down IGBT tandem tap 10 allows, adjust drop-down discharge current-limiting resistance R
pSize control impuls trailing edge time effectively, drop-down discharge current-limiting resistance R
pThe change in resistance scope can be 100 Ω-50k Ω.In addition, can adopt current limit by inductance to replace drop-down discharge current-limiting resistance R
p
Embodiment six: this execution mode is the further qualification to execution mode one, and the withstand voltage scope of said vacuum tetrode 6 is 10kV-100kV.Other composition and annexation are identical with execution mode one.
The withstand voltage value of radio tube 6 needs to require the voltage range of exporting and decide based on power supply is actual in this embodiment.
Embodiment seven: this execution mode is the further qualification to execution mode one, and the span of said high-voltage pulse capacitor 8 is 0.5 μ F-5 μ F.Other composition and annexation are identical with execution mode one.
High-voltage pulse capacitor 8 at voltage one regularly can be exported the requirement that maximum surge current, pulsewidth and pulse voltage flat-top fall according to power supply, and the capacity of high-voltage pulse capacitor 8 is selected.
Embodiment eight: this execution mode is the further qualification to execution mode one, and the span that said current spike suppresses inductance 4 is 10 μ H-100 μ H.Other composition and annexation are identical with execution mode one.
Because the existence of capacitive load causes opening moment in pulse, load current is very big; In order to suppress current spike; Current spike is set suppresses inductance 4, and excessive current spike inhibition inductance 4 can cause vibration, current spike is suppressed choosing and will deciding according to specific requirement of inductance 4 inductance value.
Apparatus of the present invention are not limited to above-mentioned execution mode, can also be the reasonable combination of technical characterictic described in above-mentioned each execution mode.
Embodiment nine: this execution mode is described below in conjunction with Fig. 3 to Fig. 5; This execution mode is to inject the modulator approach with high-voltage pulse based on the plasma immersion ion of a kind of steep trailing edge low-power consumption of execution mode one; It is connected load 19 between the load earth terminal T of load incoming end A and modulator of modulator
Its modulator approach is: the driving primary signal unit 12 of charge switch produces rectangular pulse, is used for control charging IGBT tandem tap 3 and realizes charging control; While is under the triggering of the trailing edge of this rectangular pulse; Pulse delay circuit 14 is output tube driving pulse, drop-down driving pulse respectively; Wherein said drop-down driving pulse is by the trailing edge triggering for generating of electron tube driving pulse, and said electron tube driving pulse is used to drive electron tube drive circuit 15 and produces the negative high voltage pulse signal; Said drop-down driving pulse is respectively applied for the on/off that drives drop-down IGBT tandem tap 10, realizes the continuous impulse modulation.
The specific embodiment ten: present embodiment is described below in conjunction with Fig. 3 to Fig. 5; Present embodiment is further specifying the specific embodiment nine; Said rectangular pulse is fixed pulse width, the frequency periodicity rectangular pulse signal in the 5Hz-1000Hz scope; This rectangular pulse is used to control charging IGBT tandem tap 3 and realizes that the process of charging control is: said rectangular pulse is open-minded by the synchronous isolated drive circuit 13 control charging IGBT tandem taps 3 of charging; This moment, DC high-voltage power supply 1 gave high-voltage pulse capacitor 8 chargings by charging current limiter inductance 2 and high voltage silicon rectifier stack 9; Charging IGBT tandem tap 3 turn-offed when said rectangular pulse finished, and one time charging process finishes;
The pulsewidth of said electron tube driving pulse is in 5 μ s-300 μ s scopes; Said electron tube driving pulse is used to drive the process that electron tube drive circuit 15 produces the negative high voltage pulse signals: electron tube driving pulse control electron tube drive circuit 15; Make vacuum tetrode 6 open-minded; This moment, high-voltage pulse capacitor 8 suppressed inductance 4, load current-limiting resistance 5 and load 19 discharges through current spike; Promptly in load 19, produce negative high voltage, when said electron tube driving pulse finished, vacuum tetrode 6 turn-offed;
The pulsewidth of said drop-down driving pulse is 50 μ s; The process that said drop-down driving pulse is respectively applied for the on/off that drives drop-down IGBT tandem tap 10 is: this drop-down driving pulse is exported to the driving primary signal unit 16 that pulls down switch; Open-minded through the drop-down IGBT tandem tap of drop-down synchronous isolated drive circuit 17 controls 10, the equivalent capacity C of load 19 this moment
LWith parasitic capacitance C
RMiddle charge stored is through drop-down discharge current-limiting resistance R
pEquivalent resistance R with load 19
LDischarge, when said drop-down driving pulse finished, drop-down IGBT tandem tap 10 turn-offed.
The trailing edge time of high-voltage pulse mainly comes from the equivalent capacity C of load 19
LAnd parasitic capacitance C
RDischarge process, in case pulse-off, charge stored can not in time discharge in the above-mentioned electric capacity, the voltage at load two ends just can not be returned to zero potential fast, pulse voltage just has a very long hangover like this.Simultaneously, also need bigger idle power consumption for high-voltage pulse capacitor 8 chargings.The present invention reduces the trailing edge of pulse through the residual charge in the drop-down IGBT tandem tap 10 release load circuits; And utilize charging IGBT tandem tap 3 to control the charging of high-voltage pulse capacitors 8, effectively improved the efficient of power supply, through suitable circuit design; Can obtain trailing edge is that 1-2 μ s is with interior high-voltage pulse; Can improve the control precision of plasma immersion ion implantation technology effectively, the capacity usage ratio of power-supply device is high simultaneously, and is with low cost.
When the inventive method was used to modulate the 40kV high-voltage pulse, said vacuum tetrode 6 was selected the TM702-F of Beijing BOE for use.
Drop-down IGBT tandem tap 10 control impuls trailing edges among employing the present invention shown in Figure 4, shown in the curve P, drop-down discharge current-limiting resistance R
pDuring for 1.5k Ω, the high-voltage pulse trailing edge time is merely about 5 μ s, if further reduce drop-down discharge current-limiting resistance R
p, the trailing edge time can also further shorten; To not adopt drop-down IGBT tandem tap 10 among the figure, and directly adopt the drop-down discharge current-limiting resistance of 24k Ω R
pDone contrast with the mode that load 19 is in parallel, shown in curve Q, this mode is approximately 150 μ s along the time after exporting the high-voltage pulse of 30kV; The result shows that it is practicable adopting the method for drop-down IGBT tandem tap 10 control high-voltage pulse trailing edges.
In the inventive method, damage device in order to prevent excessive short circuit current, string has drop-down discharge current-limiting resistance R in load circuit
p, its value is selected unsuitable excessive, otherwise can delay the rising edge of a pulse time, can be chosen as 10 Ω-200 Ω.
The isolation transmission of synchronous isolated drive circuit 13 and the 17 pairs of drive signals of drop-down synchronous isolated drive circuit of charging can be adopted electromagnetic coupled, for example adopts the transformer mode of one group of primary coil band n group secondary coil; Also can adopt the photoelectricity coupling to isolate, for example adopt the optical fiber of a transmitting terminal/n receiving terminal to isolate, also can adopt the mode of the former end series connection of a plurality of transformers.
Claims (10)
1. the plasma immersion ion of a steep trailing edge low-power consumption injects and uses high voltage pulse modulator, it is characterized in that: it comprises that DC high-voltage power supply (1), charging current limiter inductance (2), charging IGBT tandem tap (3), current spike suppress inductance (4), load current-limiting resistance (5), vacuum tetrode (6), filament supply (7), high-voltage pulse capacitor (8), high voltage silicon stack (9), drop-down discharge current-limiting resistance (R
p), drop-down IGBT tandem tap (10), parasitic capacitance (C
R), two grid power supplys (11), the driving primary signal unit (12) of charge switch, the synchronous isolated drive circuit (13) that charges, pulse delay circuit (14), electron tube drive circuit (15), the driving primary signal unit (16) that pulls down switch and drop-down synchronous isolated drive circuit (17)
The output of DC high-voltage power supply (1) connects an end of charging current limiter inductance (2); The other end of charging current limiter inductance (2) connects the collector electrode of charging IGBT tandem tap (3); The high-voltage pulse capacitor (8) of connecting between the load incoming end (A) of emitter and the modulator of charging IGBT tandem tap (3)
The series current spike suppresses inductance (4) and load current-limiting resistance (5) between the emitter of charging IGBT tandem tap (3) and the anode of vacuum tetrode (6); Filament supply (7) is the cathode filament power supply of this vacuum tetrode (6), and cathode filament one end of vacuum tetrode (6) connects the load earth terminal (T) of modulator;
The load incoming end (A) of modulator connects the positive pole of high voltage silicon stack (9), and the negative pole of high voltage silicon stack (9) connects the load earth terminal (T) of modulator,
Parasitic capacitance (C
R) be in parallel with high voltage silicon stack (9),
The load incoming end (A) of modulator connects drop-down discharge current-limiting resistance (R
p) an end, drop-down discharge current-limiting resistance (R
p) the other end connect the emitter of drop-down IGBT tandem tap (10), the collector electrode of drop-down IGBT tandem tap (10) connects the load earth terminal (T) of modulator;
The charging control signal output of the driving primary signal unit (12) of charge switch connects the charging control signal input of the synchronous isolated drive circuit of charging (13); The signal output part of synchronous isolated drive circuit (13) of charging connects the grid of charging IGBT tandem tap (3)
The charging control signal output of the driving primary signal unit (12) of charge switch also connects the signal input part of pulse delay circuit (14); The electron tube drive signal output of pulse delay circuit (14) connects the driving signal input of electron tube drive circuit (15); The output of electron tube drive circuit (15) connects a grid input of vacuum tetrode (6); Be used for controlling the break-make of vacuum tetrode (6), the output of two grid power supplys (11) connects two grid inputs of vacuum tetrode (6);
The drop-down drive signal output of pulse delay circuit (14) connects the driving signal input of the driving primary signal unit (16) that pulls down switch; The output of the driving primary signal unit (16) that pulls down switch connects the input of drop-down synchronous isolated drive circuit (17), and the output of drop-down synchronous isolated drive circuit (17) connects the driving signal input of drop-down IGBT tandem tap (10).
2. the plasma immersion ion of steep trailing edge low-power consumption according to claim 1 injects uses high voltage pulse modulator; It is characterized in that: it also comprises drop-down IGBT equalizer circuit (18), and drop-down IGBT equalizer circuit (18) is connected in parallel between the emitter and collector electrode of drop-down IGBT tandem tap (10).
3. the plasma immersion ion of steep trailing edge low-power consumption according to claim 2 injects uses high voltage pulse modulator; It is characterized in that: said drop-down synchronous isolated drive circuit (17) adopts pulse transformer; The primary coil of pulse transformer is the output that the input of drop-down synchronous isolated drive circuit (17) connects the driving primary signal unit (16) that pulls down switch, and pulse transformer has a plurality of secondary coils;
Drop-down IGBT tandem tap (10) is composed in series by a plurality of IGBT low tension switches (Z),
Drop-down IGBT equalizer circuit (18) is made up of a plurality of capacitance-resistance bleeder circuits, and each capacitance-resistance bleeder circuit is in parallel by divider resistance (R) and dividing potential drop electric capacity (C) and forms,
Said each parallel connection of secondary windings between the collector electrode and grid of an IGBT low tension switch (Z), a parallelly connected capacitance-resistance bleeder circuit between the collector electrode of each IGBT low tension switch (Z) and the emitter.
4. the plasma immersion ion of steep trailing edge low-power consumption according to claim 3 injects uses high voltage pulse modulator, and it is characterized in that: the span of said dividing potential drop electric capacity (C) is 10nf-1000nf.
5. the plasma immersion ion of steep trailing edge low-power consumption according to claim 1 injects uses high voltage pulse modulator, it is characterized in that: said drop-down discharge current-limiting resistance (R
p) be adjustable resistance, its resistance adjustable extent is 100 Ω-50k Ω.
6. the plasma immersion ion of steep trailing edge low-power consumption according to claim 1 injects uses high voltage pulse modulator, and it is characterized in that: the withstand voltage scope of said vacuum tetrode (6) is 10kV-100kV.
7. the plasma immersion ion of steep trailing edge low-power consumption according to claim 1 injects uses high voltage pulse modulator, and it is characterized in that: the span of said high-voltage pulse capacitor (8) is 0.5 μ F-5 μ F.
8. the plasma immersion ion of steep trailing edge low-power consumption according to claim 1 injects uses high voltage pulse modulator, and it is characterized in that: the span that said current spike suppresses inductance (4) is 10 μ H-100 μ H.
9. one kind is injected the high-voltage pulse modulator approach with high voltage pulse modulator based on the plasma immersion ion of the described steep trailing edge low-power consumption of claim 1, and load (19) is connected between the load earth terminal (T) of load incoming end (A) and modulator of modulator,
It is characterized in that: the driving primary signal unit (12) of charge switch produces rectangular pulse, is used for control charging IGBT tandem tap (3) and realizes charging control; While is under the triggering of the trailing edge of this rectangular pulse; Pulse delay circuit (14) is output tube driving pulse, drop-down driving pulse respectively; Wherein said drop-down driving pulse is by the trailing edge triggering for generating of electron tube driving pulse, and said electron tube driving pulse is used to drive electron tube drive circuit (15) and produces the negative high voltage pulse signal; Said drop-down driving pulse is respectively applied for the on/off that drives drop-down IGBT tandem tap (10), realizes the continuous impulse modulation.
10. method according to claim 9 is characterized in that,
Said rectangular pulse is fixed pulse width, the frequency periodicity rectangular pulse signal in the 5Hz-1000Hz scope; This rectangular pulse is used for control charging IGBT tandem tap (3) and realizes that the process of charging control is: said rectangular pulse is open-minded through the synchronous isolated drive circuit of charging (13) control charging IGBT tandem tap (3); DC high-voltage power supply this moment (1) is given high-voltage pulse capacitor (8) charging through charging current limiter inductance (2) and high voltage silicon stack (9); Charging IGBT tandem tap (3) turn-offed when said rectangular pulse finished, and one time charging process finishes;
The pulsewidth of said electron tube driving pulse is in 5 μ s-300 μ s scopes; Said electron tube driving pulse is used to drive the process that electron tube drive circuit (15) produces the negative high voltage pulse signal: electron tube driving pulse control electron tube drive circuit (15); Make vacuum tetrode (6) open-minded; High-voltage pulse capacitor this moment (8) suppresses inductance (4), load current-limiting resistance (5) and load (19) discharge through current spike; Promptly go up in load (19) and produce negative high voltage, when said electron tube driving pulse finished, vacuum tetrode (6) turn-offed;
The pulsewidth of said drop-down driving pulse is 50 μ s; The process that said drop-down driving pulse is respectively applied for the on/off that drives drop-down IGBT tandem tap (10) is: this drop-down driving pulse is exported to the driving primary signal unit (16) that pulls down switch; Open-minded through drop-down synchronous isolated drive circuit (17) the drop-down IGBT tandem tap of control (10), the equivalent capacity (C of load this moment (19)
L) and parasitic capacitance (C
R) in charge stored through drop-down discharge current-limiting resistance (R
p) and the equivalent resistance (R of load (19)
L) discharge, when said drop-down driving pulse finished, drop-down IGBT tandem tap (10) turn-offed.
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| CN102664606A (en) * | 2012-05-23 | 2012-09-12 | 赵涛 | Pulse generator |
| CN103647536B (en) * | 2013-12-05 | 2016-05-25 | 华北电力大学 | For electromagnetic type solid switch and the checkout gear of high tension loop |
| CN105895478B (en) * | 2016-06-24 | 2017-10-20 | 桂林狮达机电技术工程有限公司 | Possesses the electron beam system for suppressing electron gun electric discharge harm function |
| CN107453595B (en) * | 2017-08-17 | 2019-07-02 | 国家电网公司 | Series IGBT sync control device based on synchro source technology |
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| CN1397663A (en) * | 2002-08-01 | 2003-02-19 | 西安交通大学 | Driver of pulse power supply for plasma aided chemical gas-phase deposition apparatus |
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