CN101943855A - Phase shift mask plate structure and manufacturing method thereof - Google Patents
Phase shift mask plate structure and manufacturing method thereof Download PDFInfo
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- CN101943855A CN101943855A CN2010102505318A CN201010250531A CN101943855A CN 101943855 A CN101943855 A CN 101943855A CN 2010102505318 A CN2010102505318 A CN 2010102505318A CN 201010250531 A CN201010250531 A CN 201010250531A CN 101943855 A CN101943855 A CN 101943855A
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Abstract
The invention provides a phase shift mask plate structure and a manufacturing method thereof. The phase shift mask plate structure comprises a mask plate substrate, a phase shift extinction layer arranged on the mask plate substrate, and a selective epitaxial deposition protective film arranged on the phase shift extinction layer, wherein the selective epitaxial deposition protective film is silica, polycrystalline silicon, silicon carbide, silicon oxynitride, carbon silicon oxide or silicon nitride. The phase shift mask plate structure and the manufacturing method thereof have the advantages of saving metal chromium used by the conventional mask plate, reducing the manufacturing cost, replacing the metal chromium by a material with high wet-etching selection ratio on the phase shift layer by depending on the selective epitaxial deposition technology, reducing the damage of secondary dry-etching technological operation to the mask plate, and improving the performance and yield of the mask plate.
Description
Technical field
The present invention relates to field of IC technique, particularly a kind of phase shift mask plate structure and manufacture method thereof.
Background technology
Photoetching technique is followed the continuous progress of integrated circuit fabrication process, constantly dwindling of live width, it is more and more littler that the area of semiconductor devices is just becoming, and semi-conductive layout develops into the integrated circuit of integrating high-density multifunction from common simple function discrete device; By initial IC (integrated circuit) subsequently to LSI (large scale integrated circuit), VLSI (VLSI (very large scale integrated circuit)), until the ULSI of today (ULSI), the area of device further dwindles, function is powerful more comprehensively.Consider the complicacy of technique research and development, the restriction of chronicity and high cost or the like unfavorable factor, how on the basis of prior art level, further to improve the integration density of device, dwindle area of chip, as much as possiblely on same piece of silicon chip obtain effective chip-count, thereby the raising overall interests will more and more be subjected to the chip designer, the attention of manufacturer.Wherein photoetching process is just being undertaken crucial effect, and lithographic equipment, technology and mask plate technology promptly are the most important things wherein for photoetching technique.
For mask plate, Phase-Shift Masking Technique is to improve one of the most practical technology of photoetching resolution, the principle of this technology is by the phase place of adjacent area is carried out 180 ° of counter-rotatings, interference effect is cancelled each other, and then offset owing to live width is constantly dwindled the increasing negative effect of influence that the photoetching quality that causes adjacent feature zone on the domain is subjected to optical approach effect.The key point of this technology is that the phase shift layer can control the phase place of mask plate figure accurately, because in manufacture process, the phase shift layer can stand multiple damages such as etching, cleaning, and along with development of technology, live width is more little, and the requirement of mask plate defective is also improved constantly, for guaranteeing the mask plate cleaning, need before and after dispatching from the factory and in the production run, carry out cleaning, but too much processing the mask plate quality be can reduce, thereby product quality and qualification rate performance also reduced.
Summary of the invention
The present invention proposes a kind of phase shift mask plate structure and manufacture method thereof, has reduced manufacturing cost and has improved mask plate performance and yield rate.
In order to achieve the above object, the present invention proposes a kind of phase shift mask plate structure, comprising:
The mask plate substrate;
Phase shift delustring layer is arranged on the described mask plate substrate;
The selective epitaxial precipitation diaphragm is arranged on the described phase shift delustring layer.
Further, described selective epitaxial precipitation diaphragm is a silicon dioxide, polysilicon, silit, silicon oxynitride, silicon oxide carbide, or silicon nitride.
Further, the thickness of described selective epitaxial precipitation diaphragm is 10 dusts to 500 micron.
In order to achieve the above object, the present invention also proposes a kind of phase shift mask board fabrication method, comprises the following steps:
One mask plate substrate is provided, is formed with phase shift delustring layer on it, and on described phase shift delustring layer, be coated with first photoresist;
Described first photoresist is carried out photoetching, form graph area, then described phase shift delustring layer is carried out the etching graph area, until exposing described mask plate substrate, thereby finish graphical definition, remove first photoresist afterwards;
Utilize selective epitaxial growth process, at the outside selective epitaxial precipitation diaphragm that forms of described phase shift delustring layer;
Coating second photoresist on said structure, and carry out photoetching, thus defining the zone that removes of selective epitaxial precipitation diaphragm, second photoresist is protected all the other zones;
Selective epitaxial precipitation diaphragm outside wet etching removes and is exposed to is removed second photoresist, and is cleaned, thereby finishes the manufacturing of phase shift mask plate.
Further, described selective epitaxial precipitation diaphragm is a silicon dioxide, polysilicon, silit, silicon oxynitride, silicon oxide carbide, or silicon nitride.
Further, the thickness of described selective epitaxial precipitation diaphragm is 10 dusts to 500 micron.
Phase shift mask plate structure and manufacture method thereof that the present invention proposes, omitted the crome metal that conventional mask plate uses, reduce manufacturing cost and relied on the selective epitaxial precipitation technology, with the material substituted metal chromium that phase shift layer (MoSi) is had high wet method etching selection ratio, reduce the damage that the operation of secondary dry etch process produces mask plate, improve mask plate performance and yield rate.
Description of drawings
Figure 1 shows that the phase shift mask plate structure synoptic diagram of preferred embodiment of the present invention.
Fig. 2～Figure 6 shows that phase shift mask board fabrication method structural representation of preferred embodiment of the present invention.
Embodiment
In order more to understand technology contents of the present invention, especially exemplified by specific embodiment and cooperate appended graphic being described as follows.
Please refer to Fig. 1, Figure 1 shows that the phase shift mask plate structure synoptic diagram of preferred embodiment of the present invention.The present invention proposes a kind of phase shift mask plate structure, comprising: mask plate substrate 10; Phase shift delustring layer 20 is arranged on the described mask plate substrate 10; Selective epitaxial precipitation diaphragm 30 is arranged on the described phase shift delustring layer 20, and wherein said selective epitaxial precipitation diaphragm 30 is a silicon dioxide, polysilicon, silit, silicon oxynitride, silicon oxide carbide, or silicon nitride.
Further, the thickness of described selective epitaxial precipitation diaphragm 30 is 10 dusts to 500 micron.
Please refer to Fig. 2～Fig. 6 again, Fig. 2～Figure 6 shows that phase shift mask board fabrication method structural representation of preferred embodiment of the present invention.The present invention also proposes a kind of phase shift mask board fabrication method, comprises the following steps:
With reference to figure 2, a mask plate substrate 1 is provided, be formed with phase shift delustring layer 2 on it, and on described phase shift delustring layer 2, be coated with first photoresist 5;
With reference to figure 3, described first photoresist 5 is carried out photoetching, form graph area, then described phase shift delustring layer 2 is carried out the etching graph area, until exposing described mask plate substrate 1, thereby finish graphical definition, remove first photoresist 5 afterwards;
With reference to figure 4, utilize selective epitaxial growth process, at the described phase shift delustring layer 2 outside selective epitaxial precipitation diaphragm 3 that forms;
With reference to figure 5, coating second photoresist 6 on said structure, and carry out photoetching, thus define the zone that removes of selective epitaxial precipitation diaphragm 3, second photoresist, 6 all the other zones of protection;
With reference to figure 6, the selective epitaxial precipitation diaphragm 3 outside wet etching removes and is exposed to is removed second photoresist 6, and is cleaned, thereby finishes the manufacturing of phase shift mask plate.
Further, described selective epitaxial precipitation diaphragm 3 is a silicon dioxide, and polysilicon, silit, silicon oxynitride, silicon oxide carbide, or silicon nitride, the thickness of wherein said selective epitaxial precipitation diaphragm 3 are 10 dusts to 500 micron.
In sum, phase shift mask plate structure and manufacture method thereof that the present invention proposes, omitted the crome metal that conventional mask plate uses, reduce manufacturing cost and relied on the selective epitaxial precipitation technology, with the material substituted metal chromium that phase shift layer (MoSi) is had high wet method etching selection ratio, reduce the damage that the operation of secondary dry etch process produces mask plate, improve mask plate performance and yield rate.
Though the present invention discloses as above with preferred embodiment, so it is not in order to limit the present invention.The persond having ordinary knowledge in the technical field of the present invention, without departing from the spirit and scope of the present invention, when being used for a variety of modifications and variations.Therefore, protection scope of the present invention is as the criterion when looking claims person of defining.
Claims (6)
1. a phase shift mask plate structure is characterized in that, comprising:
The mask plate substrate;
Phase shift delustring layer is arranged on the described mask plate substrate;
The selective epitaxial precipitation diaphragm is arranged on the described phase shift delustring layer.
2. phase shift mask plate structure according to claim 1 is characterized in that, described selective epitaxial precipitation diaphragm is a silicon dioxide, polysilicon, silit, silicon oxynitride, silicon oxide carbide, or silicon nitride.
3. phase shift mask plate structure according to claim 1 is characterized in that, the thickness of described selective epitaxial precipitation diaphragm is 10 dusts to 500 micron.
4. a phase shift mask board fabrication method is characterized in that, comprises the following steps:
One mask plate substrate is provided, is formed with phase shift delustring layer on it, and on described phase shift delustring layer, be coated with first photoresist;
Described first photoresist is carried out photoetching, form graph area, then described phase shift delustring layer is carried out the etching graph area, until exposing described mask plate substrate, thereby finish graphical definition, remove first photoresist afterwards;
Utilize selective epitaxial growth process, at the outside selective epitaxial precipitation diaphragm that forms of described phase shift delustring layer;
Coating second photoresist on said structure, and carry out photoetching, thus defining the zone that removes of selective epitaxial precipitation diaphragm, second photoresist is protected all the other zones;
Selective epitaxial precipitation diaphragm outside wet etching removes and is exposed to is removed second photoresist, and is cleaned, thereby finishes the manufacturing of phase shift mask plate.
5. phase shift mask plate structure according to claim 4 is characterized in that, described selective epitaxial precipitation diaphragm is a silicon dioxide, polysilicon, silit, silicon oxynitride, silicon oxide carbide, or silicon nitride.
6. phase shift mask plate structure according to claim 4 is characterized in that, the thickness of described selective epitaxial precipitation diaphragm is 10 dusts to 500 micron.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010250531.8A CN101943855B (en) | 2010-08-11 | 2010-08-11 | Phase shift mask plate structure and manufacture method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010250531.8A CN101943855B (en) | 2010-08-11 | 2010-08-11 | Phase shift mask plate structure and manufacture method thereof |
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| Publication Number | Publication Date |
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| CN101943855A true CN101943855A (en) | 2011-01-12 |
| CN101943855B CN101943855B (en) | 2016-01-06 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201010250531.8A Active CN101943855B (en) | 2010-08-11 | 2010-08-11 | Phase shift mask plate structure and manufacture method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11977325B2 (en) | 2020-05-15 | 2024-05-07 | Changxin Memory Technologies, Inc. | Photomask and its manufacturing method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04153651A (en) * | 1990-10-18 | 1992-05-27 | Dainippon Printing Co Ltd | Photomask having phase shift layer |
| JPH08123008A (en) * | 1994-10-24 | 1996-05-17 | Toppan Printing Co Ltd | Phase shift mask and its production |
| US20030194620A1 (en) * | 1999-07-02 | 2003-10-16 | Yong-Hoon Kim | Mask blank and method of fabricating phase shift mask from the same |
| CN1742232A (en) * | 2002-11-25 | 2006-03-01 | 凸版光掩膜公司 | Photomask and method for creating a protective layer on the same |
| CN101770161A (en) * | 2009-12-31 | 2010-07-07 | 上海集成电路研发中心有限公司 | Method for manufacturing phase shift mask plate and structure thereof |
-
2010
- 2010-08-11 CN CN201010250531.8A patent/CN101943855B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04153651A (en) * | 1990-10-18 | 1992-05-27 | Dainippon Printing Co Ltd | Photomask having phase shift layer |
| JPH08123008A (en) * | 1994-10-24 | 1996-05-17 | Toppan Printing Co Ltd | Phase shift mask and its production |
| US20030194620A1 (en) * | 1999-07-02 | 2003-10-16 | Yong-Hoon Kim | Mask blank and method of fabricating phase shift mask from the same |
| CN1742232A (en) * | 2002-11-25 | 2006-03-01 | 凸版光掩膜公司 | Photomask and method for creating a protective layer on the same |
| CN101770161A (en) * | 2009-12-31 | 2010-07-07 | 上海集成电路研发中心有限公司 | Method for manufacturing phase shift mask plate and structure thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11977325B2 (en) | 2020-05-15 | 2024-05-07 | Changxin Memory Technologies, Inc. | Photomask and its manufacturing method |
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| CN101943855B (en) | 2016-01-06 |
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