CN101911309A - Conductive glass for dye-sensitized solar cell and manufacturing method thereof - Google Patents
Conductive glass for dye-sensitized solar cell and manufacturing method thereof Download PDFInfo
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- CN101911309A CN101911309A CN200880123022XA CN200880123022A CN101911309A CN 101911309 A CN101911309 A CN 101911309A CN 200880123022X A CN200880123022X A CN 200880123022XA CN 200880123022 A CN200880123022 A CN 200880123022A CN 101911309 A CN101911309 A CN 101911309A
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- solar cell
- glass substrate
- electrode
- glass
- conductive glass
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- 239000011521 glass Substances 0.000 title claims abstract description 84
- 238000004519 manufacturing process Methods 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 239000004020 conductor Substances 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 18
- 239000000975 dye Substances 0.000 claims description 28
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000002002 slurry Substances 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 9
- 239000002184 metal Substances 0.000 abstract description 9
- 239000002994 raw material Substances 0.000 abstract description 5
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 238000000576 coating method Methods 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- 230000005693 optoelectronics Effects 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 3
- 239000003574 free electron Substances 0.000 description 3
- 239000003792 electrolyte Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2068—Panels or arrays of photoelectrochemical cells, e.g. photovoltaic modules based on photoelectrochemical cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
- H10K30/83—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes comprising arrangements for extracting the current from the cell, e.g. metal finger grid systems to reduce the serial resistance of transparent electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2059—Light-sensitive devices comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
- H10K2102/102—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising tin oxides, e.g. fluorine-doped SnO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
- H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
The present invention relates to a conductive glass for a dye-sensitized solar cell, and a method for preparing the same. The conductive glass comprises a glass substrate, a plurality of metal wires formed on the glass substrate, and a transparent conductive material layer formed on the glass substrate and the metal wires. According to the present invention, the resistance of the conductive glass can be reduced to improve its electrical properties. The conductive glass substrate is applied to the dye-sensitized solar cell, so that the cost of raw materials can be reduced, and the online assembly of process equipment is simplified. Also, sunlight absorption of the solar cell is increased due to scattering caused by a plurality of metal wires included in the photoelectrode, thereby providing a highly efficient dye-sensitized solar cell.
Description
Technical field
The present invention relates to conductive glass for dye sensitive solar cell, and the method that is used to prepare described electro-conductive glass.The method that is particularly related to conductive glass for dye sensitive solar cell and is used to prepare described electro-conductive glass, this electro-conductive glass can reduce the resistance of electro-conductive glass to improve its electrical properties, be used for DSSC to reduce the online assembling of the cost of raw material and simplified process equipment, and owing to the caused scattering of a plurality of wires (line) that is included in the optoelectronic pole, the sunlight that has increased solar cell absorbs, thereby a kind of DSSC efficiently is provided.
Background technology
In general, transparent conducting coating is applied to show the nesa coating of usefulness, the nesa coating of solar cell etc., grows with each passing day in its market.It generally is to be prepared by electric conducting material being applied on the insulating glass (bare glass (bare glass), soda-lime glass).
Glass is electrical insulator, and the conductance of its room temperature is 10
-10～10
-11(Ω cm)
-1In order to give insulating glass with conductivity and keep its light transmission simultaneously, with TCO (transparent conductive oxide) film or metal coated in glass surface to form transparent conducting coating.
But if TCO or metal use separately, for metal, conductance is by its thickness decision, and for TCO, conductance is then determined by the thickness and the doping content of film.And for metal, even also can produce free electron at low temperatures, and the collision of conductivity when raising owing to temperature reduces; And for TCO, the free electron that low temperature produces down can combine again with the hole, thereby the increase in free electron and hole makes the conductivity enhancing when raising owing to temperature.And, being applied to DSSC if will comprise the electro-conductive glass of TCO, can reduce owing to high relatively resistance makes efficient.
Thereby, pressing for a kind of conductive glass for dye sensitive solar cell of exploitation, its resistance with improvement is applied to DSSC and raises the efficiency being suitable for.
Summary of the invention
In order to solve the aforementioned problems in the prior, the method that an object of the present invention is to provide a kind of conductive glass for dye sensitive solar cell and prepare described electro-conductive glass, this electro-conductive glass can reduce the resistance of electro-conductive glass to improve its electrical properties, can be used for DSSC to reduce the online assembling of the cost of raw material and simplified process equipment, and owing to the caused scattering of a plurality of wires that is included in the optoelectronic pole, the sunlight that has increased solar cell absorbs (particularly sunlight being absorbed the efficient of optoelectronic pole inside), thereby a kind of DSSC efficiently is provided.
In order to realize described purpose, the invention provides a kind of conductive glass for dye sensitive solar cell, it comprise glass substrate, be formed at a plurality of wires on the described glass substrate and be formed at described glass substrate and described wire on transparent conductive material layer.
The present invention also provides a kind of DSSC, it comprises and comprises oxide semiconductor, dyestuff and electrolytical intermediate layer between first electrode of being made up of transparency electrode, second electrode that is attached to described transparency electrode lower surface and first electrode and second electrode that wherein said first electrode or second electrode comprise electro-conductive glass of the present invention.
The present invention also provides a kind of method for preparing conductive glass for dye sensitive solar cell, and it comprises the steps: to provide glass substrate, is forming a plurality of wires on the described glass substrate, forms transparent conductive material layer on described glass substrate and described wire.
According to bright conductive glass for dye sensitive solar cell of this law and preparation method thereof, the resistance that can reduce electro-conductive glass is to improve its electrical properties.Described conducting glass substrate is applied to DSSC can reduces the cost of raw material, the online assembling of simplified process equipment.And owing to the caused scattering of a plurality of wires that is included in the optoelectronic pole, the sunlight that has increased solar cell absorbs, thereby a kind of DSSC efficiently is provided.
Description of drawings
Fig. 1 represents the profile according to the section of the conductive glass for dye sensitive solar cell of an embodiment of the invention.
Fig. 2 represents the plan view of the various arrangements wiry of each execution mode according to the present invention.
Fig. 3 schematically represents to comprise the section according to the DSSC of the electro-conductive glass of an embodiment of the invention.
Fig. 4 schematically represents to prepare the method according to the conductive glass for dye sensitive solar cell of one embodiment of the present invention.
Fig. 5 represents the enlarged photograph according to the conductive glass for dye sensitive solar cell of an embodiment of the invention.
Reference numeral:
10: glass substrate 20: wire
30: transparent conductive material layer
100: the first electrodes
200: the second electrodes
300: oxide semiconductor and dyestuff
350: scattering layer
400: electrolyte
The 500:Pt coating
Embodiment
Be elaborated to this law is bright below with reference to accompanying drawing.
The present invention relates to a kind of conductive glass for dye sensitive solar cell, it comprises glass substrate 10, be formed at a plurality of wires 20 on the glass substrate 10, be formed at the transparent conductive material layer 30 on glass substrate 10 and the wire 20.
Especially,, not only TCO is coated on the glass substrate, also wire is embedded between described transparent conductive material layer and the glass substrate according to conductive glass for dye sensitive solar cell of the present invention.Thereby, significantly reduced the resistance of glass substrate, and the reduction of transmissivity that enters the transmitted light of solar cell is minimized.And, because by having the transmission scattering of light that good reflexive a plurality of wires cause, the sunlight that has increased solar cell absorbs.Fig. 1-Fig. 3 has represented its execution mode.
Fig. 1 represents the section according to the conductive glass for dye sensitive solar cell of an embodiment of the invention, and wherein, wire 20 is formed on the glass substrate 10, and transparent conductive material layer 30 is coated on its whole surface.
As transparent conductive material, can adopt various TCO known in the art, according to technology stability and simplicity, preferred ITO or FTO.
If described wire has network structure, then be preferably trellis, this is because it is being favourable aspect consistency of convenience of making and electrical properties.Preferably, consider and make and electrical properties that each lattice is of a size of (100～300 μ m) * (100～300 μ m), the width of silk is 10～30 μ m.More preferably, each lattice is of a size of 270 μ m * 270 μ m, and the silk width is 22 μ m.In order to obtain the homogeneity of film thickness, the thickness of silk is preferably 10 μ m, more preferably 3 μ m.
The present invention also provides a kind of DSSC that comprises electro-conductive glass recited above, comprise first electrode 100 formed by transparency electrode, be attached to second electrode 200 of transparency electrode 100 lower surface and comprise first electrode 100 and second electrode 200 between the intermediate layer of oxide semiconductor, dyestuff 300 and electrolyte 400, wherein said first electrode 100 or second electrode 200 comprise electro-conductive glass recited above.
An execution mode of DSSC of the present invention is shown in Fig. 3.Constitute by conductive glass for dye sensitive solar cell of the present invention with reference to figure 3, the first electrodes and second electrode.But, can only be first electrode or only be that second electrode comprises electro-conductive glass of the present invention.
In general, DSSC comprises first electrode 100, second electrode 200, comprises the layer 300 of metal-oxide semiconductor (MOS) particle and dyestuff and is arranged at dielectric substrate 400 below it.In addition, can further include scattering layer 350.Wherein, described first electrode can comprise conductive glass for dye sensitive solar cell of the present invention; Perhaps described second electrode can comprise electro-conductive glass of the present invention, in this case, can be coated with Pt thereon further to comprise Pt coating 500.
Thereby as shown in Figure 3, because the transmission scattering of light, the sunlight that has strengthened solar cell absorbs.
The present invention also provides a kind of method for preparing conductive glass for dye sensitive solar cell recited above, it comprises the steps: to provide glass substrate, on glass substrate, form a plurality of wires, on glass substrate and wire, form transparent conductive material layer.
As shown in Figure 2, wire 20 can be intersected with each other, parallel to each other or be reticulated structure.As wire, can use various metal known in the art, the preferred wire that forms by Ag that uses.
If wire is formed by Ag, then preferably form the Ag slurry intersected with each other, parallel to each other or reticulate the silk of structure by Ge Lawa (Gravia) printing.Fig. 4 represents its execution mode.Particularly, conductive paste (being preferably the silver slurry) is added on the Ge Lawa roller (Gravia roll) with pattern, is sent to winding up roller (blanket roll), is transferred on the glass substrate then.Calcine (for example 550～600 ℃, 10～15 minutes) subsequently and form transparent conductive oxide (TCO) layer, then the tco layer that forms is heated.Formation TCO heats afterwards makes the TCO crystallization, thereby its hardness is increased.
For forming transparent conductive material layer, can use various electric conducting material known in the art to adopt various coating process known in the art to be coated with.The preferred i that adopts) vapour deposition, CVD for example, ii) sputter, perhaps iii) wet type deposition, for example spin coating, etc.As the conduction coating material, can use various TCO, preferably use ITO or FTO.Because transparent conductive material layer is as conductive protecting layer, thus the thickness that forms be preferably 100～
That uses Ag recited above slurry to form by the Gravia printing as Fig. 5 (expression be network structure after calcining) shown in has a cancellated Ag wire, and form thickness thereon and be 100～
FTO, four contact probes are applied to the film resistor that 42 inches glass substrates are measured glass substrate.As a result of, obtained the film resistor shown in following table 1, mean value is about 0.30～0.36 Ω/sq, and the film resistor of 10 Ω/sq that this obtains when only adopting FTO is much smaller.
Table 1
| Substrate | Contact 1 | Contact 2 | Contact 3 | Contact 4 | Contact 5 | Contact 6 | Contact 7 | Contact 8 | Contact 9 | |
On average |
| #1 | 0.37 | 0.34 | 0.36 | 0.37 | 0.34 | 0.29 | 0.33 | 0.34 | 0.26 | 0.34 | 0.34 |
| #2 | 0.23 | 0.33 | 0.30 | 0.32 | 0.34 | 0.25 | 0.27 | 0.34 | 0.32 | 0.29 | 0.30 |
| #3 | 0.27 | 0.36 | 0.29 | 0.35 | 0.44 | 0.33 | 0.38 | 0.36 | 0.31 | 0.35 | 0.34 |
| #4 | 0.33 | 0.38 | 0.39 | 0.37 | 0.34 | 0.37 | 0.31 | 0.31 | 0.30 | 0.38 | 0.35 |
| #5 | 0.32 | 0.39 | 0.49 | 0.37 | 0.39 | 0.33 | 0.34 | 0.33 | 0.34 | 0.29 | 0.36 |
The present invention is not limited to the example and the accompanying drawing thereof of front, those skilled in the art can do not depart from aspect of the present invention that appended claims describes and the prerequisite of scope under, make various distortion or substitute.
Industrial applicibility
According to conductive glass for dye sensitive solar cell of the present invention and preparation method thereof, can reduce the resistance of electro-conductive glass to improve its electrical properties. Described conducting glass substrate is applied to DSSC can reduces the cost of raw material, the online assembling of simplified process equipment. And owing to the caused scattering of a plurality of wires that is included in the optoelectronic pole, the sunshine that has increased solar cell absorbs, thereby a kind of efficient DSSC is provided.
Claims (10)
1. conductive glass for dye sensitive solar cell comprises:
Glass substrate,
Be formed at a plurality of wires on the described glass substrate, and
Be formed at the transparent conductive material layer on described glass substrate and the described wire.
2. conductive glass for dye sensitive solar cell according to claim 1, wherein said wire is formed by Ag, and it is intersected with each other, parallel to each other or reticulate structure.
3. conductive glass for dye sensitive solar cell according to claim 1, wherein said transparent conductive material are ITO or FTO.
4. conductive glass for dye sensitive solar cell according to claim 2, wherein said network structure is a trellis, each lattice is of a size of (100～300 μ m) * (100～300 μ m), and the width of silk is 10～30 μ m, and the maximum ga(u)ge of silk is 10 μ m.
5. DSSC comprises:
First electrode of forming by transparency electrode,
Be attached to second electrode of described transparency electrode lower surface, and
Comprise oxide semiconductor, dyestuff and electrolytical intermediate layer between first electrode and second electrode,
Wherein said first electrode or second electrode package contain right and require any described electro-conductive glass in 1～4.
6. method for preparing conductive glass for dye sensitive solar cell, it comprises the steps:
Glass substrate is provided,
On described glass substrate, form a plurality of wires, and
On described glass substrate and described wire, form transparent conductive material layer.
7. method according to claim 6, wherein said wire is formed by Ag (silver), and it is intersected with each other, parallel to each other or reticulate structure.
8. method according to claim 7, wherein said Ag (silver) adopts the Ag slurry to be formed intersected with each other, parallel to each other by Ge Lawa printing or reticulates the silk of structure.
9. method according to claim 6, wherein said transparent conductive material are ITO or FTO.
10. method according to claim 9, wherein said transparent conductive material passes through i) vapour deposition, ii) sputter or iii) wet type deposit for example spin coating and form.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020070138489A KR20090070471A (en) | 2007-12-27 | 2007-12-27 | Conductive glass for dye sensitive solar cell and method of preparing the same |
| KR10-2007-0138489 | 2007-12-27 | ||
| PCT/KR2008/007633 WO2009084851A2 (en) | 2007-12-27 | 2008-12-24 | Conductive glass for dye sensitive solar cell and method of preparing the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101911309A true CN101911309A (en) | 2010-12-08 |
Family
ID=40824874
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200880123022XA Pending CN101911309A (en) | 2007-12-27 | 2008-12-24 | Conductive glass for dye-sensitized solar cell and manufacturing method thereof |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP2011508946A (en) |
| KR (1) | KR20090070471A (en) |
| CN (1) | CN101911309A (en) |
| TW (1) | TW200939484A (en) |
| WO (1) | WO2009084851A2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102148264A (en) * | 2010-12-30 | 2011-08-10 | 袁晓 | Silicon solar battery with wire electrode and manufacturing method thereof |
| CN102420261A (en) * | 2011-11-30 | 2012-04-18 | 南京华伯仪器科技有限公司 | Solar cell |
| CN105717713A (en) * | 2014-12-05 | 2016-06-29 | 汉朗科技(北京)有限责任公司 | Improved smectic phase light dimming glass |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110047402A (en) * | 2009-10-30 | 2011-05-09 | 최윤정 | Dye-sensitized Solar Cell |
| JP5720680B2 (en) * | 2010-05-28 | 2015-05-20 | コニカミノルタ株式会社 | Electrodes for organic electronic devices |
| BR112013024351A2 (en) * | 2011-03-22 | 2016-12-20 | Efacec Engenharia E Sist S S A | substrate and electrode for solar cells and their manufacturing process |
| KR101894431B1 (en) * | 2011-10-06 | 2018-09-04 | 주식회사 동진쎄미켐 | Dye-Sensitized Solar Cell and Method for Forming Electrode Protecting Layer Using the Same |
| KR101224845B1 (en) * | 2012-04-10 | 2013-01-22 | 주식회사 상보 | DYE-SENSITIZED SOLAR CELL WITH GRAPHENE OR CNT/Ag COUNTER ELECTRODES AND MANUFACTURING METHOD THEREOF |
| KR101598501B1 (en) * | 2014-08-25 | 2016-03-02 | 한국에너지기술연구원 | Methods of manufacturing silver printed transparent electrode and methods of manufacturing solar cell using the same |
| CN110277474B (en) * | 2019-06-06 | 2021-12-07 | 苏州迈展自动化科技有限公司 | Preparation method of metal wire film of solar cell |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09147639A (en) * | 1995-11-27 | 1997-06-06 | Nippon Paint Co Ltd | Transparent electrode material |
| JP2005302508A (en) * | 2004-04-12 | 2005-10-27 | Fuji Photo Film Co Ltd | Transparent conductive sheet and electroluminescent element using it |
| JP4615250B2 (en) * | 2004-05-20 | 2011-01-19 | 藤森工業株式会社 | Transparent electrode substrate, method for producing the same, and dye-sensitized solar cell using the substrate |
| JP2008288102A (en) * | 2007-05-18 | 2008-11-27 | Fujifilm Corp | Transparent conductive film, manufacturing method of transparent conductive film, transparent electrode film, dye-sensitized solar cell, electroluminescent element, and electronic paper |
-
2007
- 2007-12-27 KR KR1020070138489A patent/KR20090070471A/en not_active Application Discontinuation
-
2008
- 2008-12-22 TW TW097150045A patent/TW200939484A/en unknown
- 2008-12-24 WO PCT/KR2008/007633 patent/WO2009084851A2/en active Application Filing
- 2008-12-24 JP JP2010540574A patent/JP2011508946A/en not_active Withdrawn
- 2008-12-24 CN CN200880123022XA patent/CN101911309A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102148264A (en) * | 2010-12-30 | 2011-08-10 | 袁晓 | Silicon solar battery with wire electrode and manufacturing method thereof |
| CN102420261A (en) * | 2011-11-30 | 2012-04-18 | 南京华伯仪器科技有限公司 | Solar cell |
| CN105717713A (en) * | 2014-12-05 | 2016-06-29 | 汉朗科技(北京)有限责任公司 | Improved smectic phase light dimming glass |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200939484A (en) | 2009-09-16 |
| WO2009084851A2 (en) | 2009-07-09 |
| KR20090070471A (en) | 2009-07-01 |
| WO2009084851A3 (en) | 2009-10-29 |
| JP2011508946A (en) | 2011-03-17 |
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