CN101905949B - Silicon tetrachloride feeding pressurization system and pressurization method thereof - Google Patents
Silicon tetrachloride feeding pressurization system and pressurization method thereof Download PDFInfo
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- CN101905949B CN101905949B CN 201010107135 CN201010107135A CN101905949B CN 101905949 B CN101905949 B CN 101905949B CN 201010107135 CN201010107135 CN 201010107135 CN 201010107135 A CN201010107135 A CN 201010107135A CN 101905949 B CN101905949 B CN 101905949B
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- silicon tetrachloride
- booster jar
- jar
- booster
- feeding
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
- C03B37/01—Manufacture of glass fibres or filaments
- C03B37/012—Manufacture of preforms for drawing fibres or filaments
- C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
- C03B37/01413—Reactant delivery systems
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2207/00—Glass deposition burners
- C03B2207/80—Feeding the burner or the burner-heated deposition site
- C03B2207/85—Feeding the burner or the burner-heated deposition site with vapour generated from liquid glass precursors, e.g. directly by heating the liquid
- C03B2207/88—Controlling the pressure
Abstract
The invention discloses a silicon tetrachloride feeding pressurization system and a pressurization method thereof, which relate to the pressurization of feeding silicon tetrachloride in the production of an optical-fibre perform, in particular to a method for realizing long-distance feeding by adding a set of pressurization system. The pressurization system comprises two silicon tetrachloride pressurization tanks, a nitrogen pressurizing tank, two weight electronic weighers, a plurality of solenoid valves and a plurality of PLCs (programmable logic controllers), wherein a weight electronic weigher is arranged on the lower parts of the two silicon tetrachloride pressurization tanks respectively, or a liquid level meter is arranged in both the two silicon tetrachloride pressurization tanks; and a nitrogen pipeline, a feeding pipeline and a discharging pipeline are arranged on the upper parts of the two silicon tetrachloride pressurization tanks respectively. The silicon tetrachloride in a silicon tetrachloride storage tank is pressurized through nitrogen; the liquid silicon tetrachloride is sent to the two silicon tetrachloride pressurization tanks; the silicon tetrachloride in one of the silicon tetrachloride pressurization tanks is pressurized by the nitrogen pressurizing tank through the nitrogen; and the silicon tetrachloride is conveyed to silicon tetrachloride deposition equipment through pressure feed, and thus technical feeding is realized.
Description
Technical field
What a kind of silicon tetrachloride feeding supercharging system of the present invention and boosting method thereof related to is that a kind of fibre-optical preform is made the field; Raw material silicon tetrachloride feeding supercharging during in this way for the production fibre-optical preform; Especially through increasing by a cover supercharging system, realize the method for remote feeding.
Background technology
Silicon tetrachloride during at present general fibre-optical preform is made continues feed process, is to realize through the mutual switching between two silicon tetrachloride raw material storage tanks.When the silicon tetrachloride in the silicon tetrachloride raw material storage tank uses up, automatically switch to another silicon tetrachloride raw material storage tank and carry out feeding, simultaneously silicon tetrachloride is changed or filled to the silicon tetrachloride storage tank of sky.
Although this method can keep SiCl
4Continuously feeding; But this method also has some following shortcoming: because the withstand voltage of the silicon tetrachloride raw material storage tank of international standard is 4KPa, when passing through the direct binder of silicon tetrachloride raw material storage tank to depositing device, because the existence of crushing; The distance of silicon tetrachloride raw material storage tank to depositing device then is restricted; Feeding at a distance, the feed pressure of the depositing device silicon tetrachloride of pipe end can be unstable, thereby influence the quality of fibre-optical preform.
Summary of the invention
The objective of the invention is provides a kind of silicon tetrachloride feeding supercharging system and boosting method thereof to above-mentioned weak point, solves because silicon tetrachloride raw material storage tank pressure is not enough, can not realize the problem of remote feeding and feeding pressure transient.
A kind of silicon tetrachloride feeding supercharging system of the present invention and boosting method thereof take following technical scheme to realize:
The silicon tetrachloride feeding supercharging system comprises two silicon tetrachloride booster jars, a nitrogen pressure jar, two weight electronic scaless or two liquidometers, several SVs and PLC programmable logic controllers.
The weight electronic scales is housed respectively or two booster jar inside liquidometer is housed respectively two silicon tetrachloride booster jar bottoms, silicon tetrachloride booster jar top is equipped with nitrogen pipeline, feed pipe and discharge pipe respectively.The nitrogen pipeline entrance end of one of them silicon tetrachloride booster jar one is equipped with SV one, and SV one links to each other with the nitrogen pressure jar through pipeline.SV two is housed on the feed-pipe of silicon tetrachloride booster jar one, and SV two links to each other with the silicon tetrachloride raw material storage tank through pipeline.SV three is housed on the discharge port of silicon tetrachloride booster jar one, and SV threeway piping links to each other with depositing device.The nitrogen pipeline entrance end of silicon tetrachloride booster jar two is equipped with SV four, and SV four-way piping links to each other with the nitrogen pressure jar.On silicon tetrachloride booster jar two feed-pipes SV five is housed, SV five-way piping links to each other with the silicon tetrachloride raw material storage tank.The extraction line of silicon tetrachloride booster jar two is equipped with SV six, and SV six links to each other with depositing device through pipeline.Said SV one, SV two, SV three, SV four, SV five, SV six link to each other with the PLC programmable logic controller respectively through wire, open and close through the PLC Controlled by Programmable Controller.
Said silicon tetrachloride booster jar one is withstand voltage greater than 4KPa with silicon tetrachloride booster jar two.
The silicon tetrachloride feeding boosting method is following:
At first, all valve closes is opened SV two and SV five respectively; The silicon tetrachloride raw material storage tank is depressed into silicon tetrachloride booster jar one and silicon tetrachloride booster jar two through nitrogen pressure with silicon tetrachloride, and weight electronic scales one and weight electronic scales two are respectively to the silicon tetrachloride weight detecting in silicon tetrachloride booster jar one and the silicon tetrachloride booster jar two simultaneously; When waiting to reach upper weight limit, SV two cuts out with SV five, stops feeding; Or through liquidometer one and liquidometer two respectively to the silicon tetrachloride Level Detection in silicon tetrachloride booster jar one and the silicon tetrachloride booster jar two; Wait to reach on the liquid level and prescribe a time limit, SV two cuts out with SV five, stops feeding.Afterwards; SV one is opened with SV three; The nitrogen pressure jar applies the pressure greater than 4KPa; Begin silicon tetrachloride booster jar one is fed nitrogen pressure, silicon tetrachloride is extruded from silicon tetrachloride booster jar one deliver to the silicon tetrachloride depositing device and carry out the technology feeding, silicon tetrachloride booster jar two is to be switched state; Simultaneously, the silicon tetrachloride weight in a pair of silicon tetrachloride booster jar one of weight electronic scales detects, when weight reaches down in limited time; Automatically switch to silicon tetrachloride booster jar two and carry out feeding, or the silicon tetrachloride liquid level in a pair of silicon tetrachloride booster jar one of liquidometer detects, when liquid level reaches down in limited time; Automatically switch to silicon tetrachloride booster jar two and carry out feeding; At this moment, SV one cuts out with SV three, and SV four is opened with SV six; The nitrogen pressure jar applies the pressure greater than 4KPa; Silicon tetrachloride booster jar two is fed nitrogen pressure, silicon tetrachloride is pressed out to the silicon tetrachloride depositing device from silicon tetrachloride booster jar two, realize automaticallying switch and stablize feeding; Simultaneously; SV two is opened, and begins feed supplement in silicon tetrachloride booster jar one in the silicon tetrachloride raw material storage tank, and silicon tetrachloride weight reaches in limited time in the silicon tetrachloride booster jar one when weight electronic scales one detects; Or reach and prescribe a time limit when liquidometer one detects in the silicon tetrachloride booster jar one the silicon tetrachloride liquid level; SV two cuts out, and the silicon tetrachloride raw material storage tank stops feeding, and silicon tetrachloride booster jar one gets into to be switched state; Simultaneously; Silicon tetrachloride weight in two pairs of silicon tetrachloride booster jars two of weight electronic scales detects; When weight reaches down in limited time, or the silicon tetrachloride liquid level in two pairs of silicon tetrachloride booster jars two of liquidometer detects, when liquid level reaches down in limited time; Automatically switch to one feeding of silicon tetrachloride booster jar, silicon tetrachloride booster jar two beginning feed supplements simultaneously; Circulate with this, the realization silicon tetrachloride is stablized feeding at a distance.
The present invention utilizes increases by a cover silicon tetrachloride supercharging device, and that realizes silicon tetrachloride stablizes feeding at a distance.This method is at first passed through nitrogen pressure with the silicon tetrachloride in the silicon tetrachloride raw material storage tank; Silicon tetrachloride liquid is delivered to two silicon tetrachloride booster jars; Give through the nitrogen pressure jar again to feed in one of them silicon tetrachloride booster jar, silicon tetrachloride force feed to silicon tetrachloride depositing device is realized the technology feeding greater than 4KPa nitrogen pressure boost.Simultaneously; The weight electronic scales of this silicon tetrachloride booster jar bottom detects the weight of this silicon tetrachloride booster jar; Or the inner liquidometer of this silicon tetrachloride booster jar detects the liquid level of silicon tetrachloride in this silicon tetrachloride booster jar, and when the silicon tetrachloride weight in this silicon tetrachloride booster jar reaches lower weight limit, or the liquid level of silicon tetrachloride reaches down in limited time in this silicon tetrachloride booster jar; Through the PLC Controlled by Programmable Controller, automatically switch to another silicon tetrachloride booster jar feed.Simultaneously, beginning feed supplement in this silicon tetrachloride booster jar, when silicon tetrachloride weight reaches upper weight limit, or the silicon tetrachloride liquid level reaches and prescribes a time limit, and stops feed supplement, gets into to be switched state automatically.Thus repeatedly, realize that the remote of silicon tetrachloride stablizes feeding, its pressure-stabilisation satisfies the processing requirement of depositing device.
Description of drawings
Below will combine accompanying drawing that the present invention is described further:
Fig. 1 is a silicon tetrachloride feeding supercharging system synoptic diagram of the present invention.
Label among the figure: 1, silicon tetrachloride booster jar one, 2, silicon tetrachloride booster jar two, 3, weight electronic scales one, 4, weight electronic scales two; 5, silicon tetrachloride raw material storage tank, 6, SV one, 7, SV two, 8, SV three; 9, SV four, 10, SV five, 11, SV six; 12, nitrogen pressure jar, 13, liquidometer one, 14, liquidometer two.
Embodiment
With reference to Fig. 1, the silicon tetrachloride feeding supercharging system comprises two silicon tetrachloride booster jars, nitrogen pressure jar, two weight electronic scaless or two liquidometers, several SVs are some and the PLC programmable logic controller.In silicon tetrachloride booster jar 1 and silicon tetrachloride booster jar 22 bottoms weight electronic scales 1 and weight electronic scales 24 are housed respectively; Or liquidometer 13 and liquidometer 14 being housed respectively in silicon tetrachloride booster jar 1 and silicon tetrachloride booster jar 22 inside, silicon tetrachloride booster jar 1 is equipped with nitrogen pipeline, feed pipe and discharge pipe respectively with silicon tetrachloride booster jar 22 tops.Wherein the nitrogen pipeline entrance end of silicon tetrachloride booster jar 1 is equipped with SV 1, and SV 1 links to each other with nitrogen pressure jar 12 through pipeline.SV 27 is housed on the feed-pipe of silicon tetrachloride booster jar 1, and SV 27 links to each other with silicon tetrachloride raw material storage tank 5 through pipeline.SV 38 is housed on the discharge port of silicon tetrachloride booster jar 1, and SV 38 links to each other with depositing device through pipeline.The nitrogen pipeline entrance end of silicon tetrachloride booster jar 22 is equipped with SV 49, and SV 49 links to each other with nitrogen pressure jar 12 through pipeline.SV 5 10 is housed on the feed-pipe of silicon tetrachloride booster jar 22, and SV 5 10 links to each other with silicon tetrachloride raw material storage tank 5 through pipeline.The extraction line of silicon tetrachloride booster jar 22 is equipped with SV 6 11, and SV 6 11 links to each other with depositing device through pipeline.Said SV 1, magnet valve 27, SV 38, SV 49, SV 5 10 and SV 6 11 link to each other with the PLC programmable logic controller respectively through wire, open and close through the PLC Controlled by Programmable Controller.
The silicon tetrachloride feeding boosting method is following:
At first, all valve closes is opened SV 27 and SV 5 10 respectively; Silicon tetrachloride raw material storage tank 5 passes through nitrogen pressure; Silicon tetrachloride is depressed into silicon tetrachloride booster jar 1 and silicon tetrachloride booster jar 22, and weight electronic scales 1 and weight electronic scales 24 are respectively to the silicon tetrachloride weight detecting in silicon tetrachloride booster jar 1 and the silicon tetrachloride booster jar 22, when waiting to reach upper weight limit simultaneously; SV 27 cuts out with SV 5 10; Stop feeding, or simultaneously liquidometer 1 and liquidometer 2 14 are waited to reach on the liquid level in limited time respectively to the silicon tetrachloride Level Detection in silicon tetrachloride booster jar 1 and the silicon tetrachloride booster jar 22; SV 27 cuts out with SV 5 10, stops feeding; Afterwards; SV 1 is opened with SV 38; Nitrogen pressure jar 12 applies the pressure greater than 4KPa, begins silicon tetrachloride booster jar 1 is fed nitrogen pressure, silicon tetrachloride is extruded from silicon tetrachloride booster jar 1 deliver to the silicon tetrachloride depositing device and carry out the technology feeding.Silicon tetrachloride booster jar 22 is to be switched state.Simultaneously, the silicon tetrachloride weight in one 3 pairs of silicon tetrachloride booster jars 1 of weight electronic scales detects, when weight reaches down in limited time; Or the silicon tetrachloride liquid level in one 13 pairs of silicon tetrachloride booster jars 1 of liquidometer detects, and when liquid level reaches down in limited time, automatically switching to silicon tetrachloride booster jar 22 carries out feeding; At this moment; SV 1 cuts out with SV 38, and SV 49 is opened with SV 6 11, and nitrogen pressure jar 12 applies the pressure greater than 4KPa; Silicon tetrachloride is pressed out to the silicon tetrachloride depositing device from silicon tetrachloride booster jar 22, realizes automaticallying switch and stablize feeding.Simultaneously; SV 27 is opened, and begins feed supplement in silicon tetrachloride booster jar 1 in the silicon tetrachloride raw material storage tank 5, and silicon tetrachloride weight reaches in limited time in the silicon tetrachloride booster jar 1 when weight electronic scales 1 detects; Or reach and prescribe a time limit when liquidometer 1 detects in the silicon tetrachloride booster jar 1 the silicon tetrachloride liquid level; SV 27 cuts out, and silicon tetrachloride raw material storage tank 5 stops feeding, and silicon tetrachloride booster jar 1 gets into to be switched state.Simultaneously; Silicon tetrachloride weight in 24 pairs of silicon tetrachloride booster jars 22 of weight electronic scales detects; When weight reaches down in limited time, or the silicon tetrachloride liquid level in 2 14 pairs of silicon tetrachloride booster jars 22 of liquidometer detects, when liquid level reaches down in limited time; Automatically switch to one 1 feedings of silicon tetrachloride booster jar, silicon tetrachloride booster jar 22 beginning feed supplements simultaneously.Circulate with this, the realization silicon tetrachloride is stablized feeding at a distance.
Said nitrogen pressure control is through increasing a nitrogen pressure jar 12; In silicon tetrachloride booster jar 1 and silicon tetrachloride booster jar 22 withstand voltage scopes; Through in silicon tetrachloride booster jar 1 or silicon tetrachloride booster jar 22, feeding nitrogen greater than 4KPa; Thereby play the effect of supercharging silicon tetrachloride feed pressure, the realization silicon tetrachloride is stablized feeding at a distance.And the nitrogen pressure adjustable that nitrogen pressure jar 12 applies size can be regulated nitrogen pressure according to actual needs.
Said silicon tetrachloride booster jar one is withstand voltage greater than 4KPa with silicon tetrachloride booster jar two.
Said weight electronic scales 1 adopts commercially available weight electronic scales with weight electronic scales 24.Said liquidometer 1 adopts commercially available liquidometer with liquidometer 2 14.Said SV 1, magnet valve 27, SV 38, SV 49, SV 5 10 and SV 6 11 adopt commercially available SV.Said PLC programmable logic controller adopts commercially available programmable logic controller.
Claims (2)
1. a silicon tetrachloride feeding supercharging system is characterized in that comprising two silicon tetrachloride booster jars, a nitrogen pressure jar, two weight electronic scaless or two liquidometers, several SVs and PLC programmable logic controllers;
Two silicon tetrachloride booster jar bottoms the weight electronic scales is housed respectively; Or liquidometer is housed respectively two booster jar inside; Nitrogen pipeline is equipped with on silicon tetrachloride booster jar top respectively; Feed pipe and discharge pipe, the nitrogen pipeline entrance end of one of them silicon tetrachloride booster jar one is equipped with SV one, and SV one links to each other with the nitrogen pressure jar through pipeline; SV two is housed on the feed-pipe of silicon tetrachloride booster jar one, and SV two links to each other with the silicon tetrachloride raw material storage tank through pipeline; SV three is housed on the discharge port of silicon tetrachloride booster jar one, and SV threeway piping links to each other with depositing device; The nitrogen pipeline entrance end of silicon tetrachloride booster jar two is equipped with SV four, and SV four-way piping links to each other with the nitrogen pressure jar; On silicon tetrachloride booster jar two feed-pipes SV five is housed, SV five-way piping links to each other with the silicon tetrachloride raw material storage tank; The extraction line of silicon tetrachloride booster jar two is equipped with SV six, and SV six links to each other with depositing device through pipeline; Said SV one, SV two, SV three, SV four, SV five, SV six link to each other with the PLC programmable logic controller respectively through wire, open and close through the PLC Controlled by Programmable Controller;
Said silicon tetrachloride booster jar one is withstand voltage greater than 4KPa with silicon tetrachloride booster jar two.
2. method of using the described silicon tetrachloride feeding supercharging system of claim 1 to carry out the silicon tetrachloride feeding supercharging is characterized in that:
At first, all valve closes is opened SV two and SV five respectively; The silicon tetrachloride raw material storage tank is depressed into silicon tetrachloride booster jar one and silicon tetrachloride booster jar two through nitrogen pressure with silicon tetrachloride, and weight electronic scales one and weight electronic scales two are respectively to the silicon tetrachloride weight detecting in silicon tetrachloride booster jar one and the silicon tetrachloride booster jar two simultaneously; When waiting to reach upper weight limit, SV two cuts out with SV five, stops feeding; Or through liquidometer one and liquidometer two respectively to the silicon tetrachloride Level Detection in silicon tetrachloride booster jar one and the silicon tetrachloride booster jar two; Wait to reach on the liquid level and prescribe a time limit, SV two cuts out with SV five, stops feeding; Afterwards; SV one is opened with SV three; The nitrogen pressure jar applies the pressure greater than 4KPa; Begin silicon tetrachloride booster jar one is fed nitrogen pressure, silicon tetrachloride is extruded from silicon tetrachloride booster jar one deliver to the silicon tetrachloride depositing device and carry out the technology feeding, silicon tetrachloride booster jar two is to be switched state; Simultaneously, the silicon tetrachloride weight in a pair of silicon tetrachloride booster jar one of weight electronic scales detects, when weight reaches down in limited time; Automatically switch to silicon tetrachloride booster jar two and carry out feeding, or the silicon tetrachloride liquid level in a pair of silicon tetrachloride booster jar one of liquidometer detects, when liquid level reaches down in limited time; Automatically switch to silicon tetrachloride booster jar two and carry out feeding; At this moment, SV one cuts out with SV three, and SV four is opened with SV six; The nitrogen pressure jar applies the pressure greater than 4KPa; Silicon tetrachloride booster jar two is fed nitrogen pressure, silicon tetrachloride is pressed out to the silicon tetrachloride depositing device from silicon tetrachloride booster jar two, realize automaticallying switch and stablize feeding; Simultaneously; SV two is opened, and begins feed supplement in silicon tetrachloride booster jar one in the silicon tetrachloride raw material storage tank, and silicon tetrachloride weight reaches in limited time in the silicon tetrachloride booster jar one when weight electronic scales one detects; Or reach and prescribe a time limit when liquidometer one detects in the silicon tetrachloride booster jar one the silicon tetrachloride liquid level; SV two cuts out, and the silicon tetrachloride raw material storage tank stops feeding, and silicon tetrachloride booster jar one gets into to be switched state; Simultaneously; Silicon tetrachloride weight in two pairs of silicon tetrachloride booster jars two of weight electronic scales detects; When weight reaches down in limited time, or the silicon tetrachloride liquid level in two pairs of silicon tetrachloride booster jars two of liquidometer detects, when liquid level reaches down in limited time; Automatically switch to one feeding of silicon tetrachloride booster jar, silicon tetrachloride booster jar two beginning feed supplements simultaneously; Circulate with this, the realization silicon tetrachloride is stablized feeding at a distance.
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| CN 201010107135 CN101905949B (en) | 2010-02-09 | 2010-02-09 | Silicon tetrachloride feeding pressurization system and pressurization method thereof |
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| CN 201010107135 CN101905949B (en) | 2010-02-09 | 2010-02-09 | Silicon tetrachloride feeding pressurization system and pressurization method thereof |
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| CN101905949A CN101905949A (en) | 2010-12-08 |
| CN101905949B true CN101905949B (en) | 2012-08-22 |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102616723B (en) * | 2011-10-27 | 2017-07-11 | 内蒙古神舟硅业有限责任公司 | Small-sized liquid silicon tetrachloride quantitative feeding system and its control method |
| CN102730979A (en) * | 2012-06-29 | 2012-10-17 | 四川虹欧显示器件有限公司 | Feeding system for coating machine and control method |
| CN105986313B (en) * | 2015-01-31 | 2018-06-01 | 东莞市中镓半导体科技有限公司 | A kind of gallium source is fed automatically and retracting device |
| CN104731119A (en) * | 2015-03-16 | 2015-06-24 | 上海福耀客车玻璃有限公司 | Automatic stirring and feeding control device of pressure stirring tank |
| CN109485249A (en) * | 2018-12-21 | 2019-03-19 | 江苏通鼎光棒有限公司 | A kind of evaporation cabinet feed supplementing device being used to prepare preform |
| CN111153590B (en) * | 2019-12-31 | 2022-03-25 | 江苏通鼎光棒有限公司 | Germanium tetrachloride tympanic bulla device of high accuracy |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101564600A (en) * | 2009-05-15 | 2009-10-28 | 天津大学 | Fiber-level high purity silicon tetrachloride continuous azeotropy lightness removing rectification method |
| CN201665619U (en) * | 2010-02-09 | 2010-12-08 | 中天科技精密材料有限公司 | Silicon tetrachloride feeding pressurization system |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101564600A (en) * | 2009-05-15 | 2009-10-28 | 天津大学 | Fiber-level high purity silicon tetrachloride continuous azeotropy lightness removing rectification method |
| CN201665619U (en) * | 2010-02-09 | 2010-12-08 | 中天科技精密材料有限公司 | Silicon tetrachloride feeding pressurization system |
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Owner name: ZHONGTIAN SCIENCE AND TECHNOLOGY CO LTD, JIANGSU Z Effective date: 20150420 |
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Effective date of registration: 20150420 Address after: 226009 Nantong economic and Technological Development Zone, Jiangsu Zhongtian Road, No. 3 Patentee after: Jiangsu Zhongtian Technology Precision Material Co., Ltd. Patentee after: Zhongtian Science and Technology Co., Ltd., Jiangsu Patentee after: Zhongtian Technologies Fiber Optics Co., Ltd. Address before: 226009 Nantong economic and Technological Development Zone, Jiangsu Zhongtian Road, No. 3 Patentee before: Jiangsu Zhongtian Technology Precision Material Co., Ltd. |