CN101902884B - Method for making composite material circuit board structure - Google Patents
Method for making composite material circuit board structure Download PDFInfo
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- CN101902884B CN101902884B CN2009102036242A CN200910203624A CN101902884B CN 101902884 B CN101902884 B CN 101902884B CN 2009102036242 A CN2009102036242 A CN 2009102036242A CN 200910203624 A CN200910203624 A CN 200910203624A CN 101902884 B CN101902884 B CN 101902884B
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Abstract
The invention discloses a method for making a composite material circuit board structure, which comprises: firstly, providing a composite material structure which comprises a substrate and a composite material dielectric layer positioned on the substrate, wherein the composite material dielectric layer comprises a catalytic dielectric layer contacting the substrate and at least one water insoluble sacrificial layer contacting the catalytic dielectric layer; patterning the composite material dielectric layer and activating catalytic particles at the same time; forming a lead layer by selectively depositing the lead layer on the surface of the activated catalytic dielectric layer; and continuing to remove at least one sacrificial layer.
Description
Technical field
The invention relates to a kind of method that forms composite material circuit board structure.Special, the invention relates to a kind of composite material that comprises catalysed particulate, in order to assist to form a board structure of circuit.
Background technology
Circuit board is a kind of important assembly in the electronic installation.For pursue thinner finished product thickness, in response to the demand on fine rule road, break through the shortcoming of etching and confidence level, the embedded lines structure is risen gradually.Because the embedded lines structure is that line pattern is imbedded in the base material, therefore help to reduce the thickness of encapsulation finished product.
With regard to present technology, known have several methods to form these circuit boards.Wherein a kind of method is to use laser with base material patternsization, inlays the structure of form, re-uses an electric conducting material and fills up the depression that is formed on the base material, to accomplish a flush type line construction.
Generally speaking, the surface of base material wants elder generation through overactivation, could make electric conducting material successfully be filled in the depression on the base material, typically uses the technology of electroless-plating.With regard to current technical scheme, its production method is direct line design.For example aforementioned use laser is inlayed the structure of form with base material patternsization, re-uses an electric conducting material and fills up the depression that is formed on the base material, to accomplish an embedded lines structure.
Please refer to Fig. 1, the existing electroless deposition technique of illustration causes the phenomenon of electroplating spill-over (over-plating).If the technology of using electroless-plating is with electric conducting material 130, for example copper is inserted in the process that is pre-formed depression 122 in the base material 101, at first, is easy to cause the phenomenon of electroplating spill-over (over-plating).When in a single day the plating spill-over took place, on the one hand, electric conducting material 130 can to all the winds extend along the corner of depression opening.Because current techniques all focuses on the exploitation on fine rule road, so that the line-spacing in the same line layer all is designed to is narrow as much as possible.Electric conducting material 130 apparent the landing of to all the winds extending along depression 122 openings have increased the chance of short circuit between adjacent wires, also can make soup production management and control be difficult for.On the other hand, the former electric conducting material 130 that should insert in base material 101 depressions 122 also may form surface contamination attached to the surface of base material 101, and the result has caused the yield of product not good.Wherein any result all be those skilled in the art happyly see.Therefore, above shortcoming has to be overcome really.
Summary of the invention
So the present invention proposes a kind of method that forms composite material circuit board structure.The present invention forms the method for composite material circuit board structure, has the characteristic of selectivity electroless-plating deposition, thereby reduces the generation of electroplating spill-over, so the problem that is able to avoid electric conducting material to all the winds to extend along the opening of depression.In addition; Because the characteristic of selectivity electroless-plating deposition; The former electric conducting material that should insert in the base material depression just can be deposited on the chance in the incorrect zone of substrate surface and reduce short risk between lead thereby reduce electric conducting material attached to the surface of base material hardly.
The present invention at first proposes a kind of method that forms composite material circuit board structure.At first, a composite structure is provided.This composite structure comprises a base material and is positioned at the composite material dielectric layer on the base material.This composite material dielectric layer then comprises a catalysis dielectric layer of contact substrate, and a sacrifice layer of contact catalysis dielectric layer.Sacrifice layer is water insoluble.Then, patterning composite material dielectric layer while activating catalytic particle.Next, formation is positioned at the conductor layer on the activated catalysed particulate.Continue, remove sacrifice layer.The preferably, the gap of conductor layer surface peak and minimum point is not more than 3 μ m.
Secondly the present invention proposes a kind of method that forms composite material circuit board structure.At first, a composite structure is provided.This composite structure comprises a base material and is positioned at the composite material dielectric layer on the base material.This composite material dielectric layer then comprises a catalysis dielectric layer of contact substrate, the interior sacrifice layer of contact catalysis dielectric layer and the outer sacrifice layer of the interior sacrifice layer of contact.Interior sacrifice layer is water insoluble.Then, patterning composite material dielectric layer while activating catalytic particle.Next, remove outer sacrifice layer.Secondly, formation is positioned at the conductor layer on the activating catalytic particle.Continue, remove interior sacrifice layer.The preferably, the gap of conductor layer surface peak and minimum point is not more than 3 μ m.
Description of drawings
The existing electroless deposition technique of Fig. 1 illustration causes the phenomenon of electroplating spill-over.
Fig. 2 to Fig. 7 B illustration forms the sketch map that the present invention forms the composite material circuit board structure method.
Wherein, description of reference numerals is following:
101 base materials
122 depressions
130 electric conducting materials
200 composite structures
201 base materials
202 composite material dielectric layer
210 catalysis dielectric layer
211 dielectric materials
212 catalysed particulates
220 sacrifice layers
221 outer sacrifice layers
Sacrifice layer in 222
225 grooves
Embodiment
The present invention provides a kind of method that forms composite material circuit board structure.Form the composite material in the composite material circuit board structure method in the present invention; Effect with selectivity electroless-plating deposition; So can reduce composite material is electroplated spill-over when electroless-plating generation, the problem of to all the winds extending with the opening of avoiding electric conducting material along depression.In addition, the former electric conducting material that should insert in the base material depression also is not easy to be deposited on the zone that other is not expected on the substrate surface, thereby reduces short risk between lead.The present invention is in providing a kind of method that forms composite material circuit board structure.Fig. 2 to Fig. 7 B illustration forms the sketch map that the present invention forms the composite material circuit board structure method.As shown in Figure 2, the present invention forms the method for composite material circuit board structure, and a composite structure 200 at first is provided.Composite structure 200 comprises a base material 201 and a composite material dielectric layer 202.Base material 201 in the composite structure 200 of the present invention can be a multilayer circuit board, for example flush type line construction circuit board and/or non-embedded type line construction circuit board.Composite material dielectric layer 202 promptly is located immediately on the base material 201.Composite material dielectric layer 202 can comprise a catalysis dielectric layer 210 and a sacrifice layer 220.Catalysis dielectric layer 210 can comprise a dielectric material 211 and at least one catalysed particulate 212.Catalysed particulate 212 can be scattered in the dielectric material 211.Once for example use after the laser activation, catalysis dielectric layer 210 can be induced the deposition of an electric conducting material under the help of this catalysed particulate 212.On the one hand; Dielectric material 211 in the composite structure 200 of the present invention can comprise a macromolecular material; For example the plain polymer of the epoxy resin of epoxy resin, upgrading, polyester, acrylic acid ester, fluorine, polyphenylene oxide, polyimides, phenolic resins, polysulfones, the plain polymer of silicon, BT resin (bismaleimide triazine modified epoxy resin), cyanic acid polyester, polyethylene, polycarbonate resin, acrylonitrile-butadiene-styrene copolymer, PET (PET), polybutylene terephthalate (PBT), liquid crystal polymer (liquid crystalpolyester, LCP), polyamide (PA), nylon 6, kematal (POM), polyphenylene sulfide (PPS) or cyclic olefin copolymer (COC) or the like.On the other hand, the catalysed particulate 212 in the composite structure 200 of the present invention can comprise the formed a plurality of nano particles of complex of metal.The complex of proper metal can be metal oxide, metal nitride, metal complex and/or metallo-chelate.Metal in the complex of metal can be zinc, copper, silver, gold, nickel, palladium, platinum, cobalt, rhodium, iridium, indium, iron, manganese, aluminium, chromium, tungsten, vanadium, tantalum and/or titanium or the like.Sacrifice layer 220 promptly is positioned on the outer surface of composite material dielectric layer 202, or covers catalysis dielectric layer 210.Sacrifice layer 220 can be made up of an insulating material, for example, and polyimides, and become the insulation sacrifice layer.Look different situations and decide, sacrifice layer 220 can be single layer structure or sandwich construction, and its thickness can reach 25 μ m at most.To explain respectively that below sacrifice layer 220 is the single layer structure or the enforcement aspect of sandwich construction.
When if sacrifice layer 220 is single layer structure, as shown in Figure 3, the whole composite material dielectric layer 202 of patterning next.During patterning composite material dielectric layer 202, can form groove 225, simultaneously activating catalytic particle 212.The mode of patterning composite material dielectric layer 202 can be used physical method.For example, can use laser ablation process or plasma etching process.Wherein, can use LASER Light Sources such as infrared laser, ultraviolet laser, quasi-molecule (Excimer) laser or far infrared laser to carry out laser ablation process.
Then, as shown in Figure 4, form a conductor layer 230.Conductor layer 230 can embed in the groove 225 of patterning composite material dielectric layer 202, thus be positioned at activation catalysed particulate on.Can use for example electroless plating method,, for example change copper, insert in the groove 225 of patterning composite material dielectric layer 202, form conductor layer 230 electric conducting material.In activation under the inducing of catalysed particulate 212, electric conducting material should mainly can be deposited in the groove 225, and disactivation catalysed particulate beyond locate.Composite material of the present invention; Can selectivity make electroless-plating be deposited on groove 225 surfaces that catalysis dielectric layer 210 is activated; So when composite material dielectric layer 202 when electroplating, can reduce the problem that generation of electroplating spill-over and the opening of avoiding electric conducting material from groove 225 to all the winds extend.In addition, the surface of conductor layer 230 is also comparatively mild, makes the gap of peak and minimum point can be not more than 3 μ m.
Because the copper of chemical technology gained and the copper of electroplating technology gained are also incomplete same on quality; Conductor layer 230 is structurally preferable only to comprise single copper layer; For example by changing the process for copper gained; Rather than form by the different copper of multiple physical property, for example mix copper by chemical technology and electroplating technology gained.After forming conductor layer 230, can remove sacrifice layer 220, as shown in Figure 5.Can use the mode that for example removes to remove sacrifice layer 220.
When if sacrifice layer 220 is sandwich construction, as shown in Figure 6, sacrifice layer 220 can comprise sacrifice layer 222 in an outer sacrifice layer 221 and.The outer sacrifice layer 221 of the present invention can be the same or different with the material of interior sacrifice layer 222.For example, interior sacrifice layer 222 is water insoluble, and outer sacrifice layer 221 is then not subject to the limits.
Next, the whole composite material dielectric layer 202 of patterning.During patterning composite material dielectric layer 202, can form groove 225, simultaneously activating catalytic particle 212.The mode of patterning composite material dielectric layer 202 can be used physical method.For example, can use laser ablation process or plasma etching process.Wherein, can use LASER Light Sources such as infrared laser, ultraviolet laser, quasi-molecule (Excimer) laser or far infrared laser to carry out laser ablation process.
If, in the process of patterning composite material dielectric layer 202, injured the surface of composite material dielectric layer 202, or stayed residue on the surface of composite material dielectric layer 202 using laser ablation process or plasma etching process.Such result, might disturb activation catalysed particulate 212 induce electric conducting material to be deposited on the process in the groove 225.At this moment, just can remove outer sacrifice layer 221, come thoroughly to solve this problem.Can after patterning composite material dielectric layer 202, remove outer sacrifice layer 221, shown in Fig. 6 A, make the surface of composite material dielectric layer 202 produce a clean surface again.
If outer sacrifice layer 221 comprises a water-soluble material; Can be before patterning composite material dielectric layer 202 backs, formation conductor layer 230; Remove outer sacrifice layer 221, avoid the formation of any impurity effect conductor layer 230 of patterning composite material dielectric layer 202 back generations.Water-soluble material can comprise hydrophilic macromolecule, and making where necessary can the water flush away.For example, the characteristic functional group of these hydrophilic macromolecules can comprise hydroxyl (OH), amide groups (CONH
2), sulfonic group (SO
3H), carboxyl (COOH) functional group of one of them, the perhaps combination in any of aforementioned each functional group.If outer sacrifice layer 221 is water insoluble, can use the mode that for example removes to remove outer sacrifice layer 221.
Then, as shown in Figure 7, form a conductor layer 230.Conductor layer 230 can selectivity only be deposited on the catalysis dielectric layer surface that is activated, so be positioned on the catalysis dielectric layer 210.If the surface of composite material dielectric layer 202 has reverted to a clean surface again; So,, for example change copper with electric conducting material using for example electroless plating method; Insert in the groove 225 of patterning composite material dielectric layer 202; When forming conductor layer 230, under no external factor interference, activation catalysed particulate 212 just be easy to induce the electric conducting material major sedimentary in groove 225.In addition, conductor layer 230 surfaces can be comparatively mild, makes the gap of peak and minimum point can be not more than 3 μ m.
Composite material of the present invention; Can selectivity making in the process of electroless-plating electric conducting material can not be formed on does not have outside the activated catalysed particulate 212; So when composite material dielectric layer 202 when electroplating, can reduce the problem that generation of electroplating spill-over and the opening of avoiding electric conducting material from groove 225 to all the winds extend.
Because the copper of chemical technology gained and the copper of electroplating technology gained are also incomplete same on quality; Conductor layer 230 is structurally preferable only to comprise single copper layer; For example by changing the process for copper gained; Rather than form by the different copper of multiple physical property, for example mix copper by chemical technology and electroplating technology gained.
Look the difference of process variations, conductor layer 230 possible similar and dielectric material 211 height such as grade are shown in Fig. 7 A.Or conductor layer 230 might be higher slightly than dielectric material 211, shown in Fig. 7 B.Conductor layer 230 on the for example same base material 201, possible some is higher slightly than dielectric material 211, some and dielectric material 211 similar height such as grade.Sacrifice layer 222 in after forming conductor layer 230, can removing is shown in Fig. 7 B.Can use the mode that for example removes to remove interior sacrifice layer 222.
The above is merely the preferred embodiments of the present invention, and all equalizations of doing according to claim of the present invention change and modify, and all should belong to covering scope of the present invention.
Claims (18)
1. method that forms composite material circuit board structure comprises:
Composite structure is provided, comprises:
Base material;
Be positioned at the composite material dielectric layer on this base material, comprise:
Catalysis dielectric layer contacts this base material, and wherein this catalysis dielectric layer comprises dielectric material and catalysed particulate; And
Sacrifice layer contacts this catalysis dielectric layer, and water insoluble;
This composite material dielectric layer of patterning is to form this catalysed particulate of a depression and activation;
Electric conducting material is filled in this depression is positioned at the conductor layer on this activating catalytic particle with formation; And remove this sacrifice layer.
2. method that forms composite material circuit board structure comprises:
Composite structure is provided, comprises:
Base material;
Be positioned at the composite material dielectric layer on this base material, comprise:
Catalysis dielectric layer contacts this base material, and wherein this catalysis dielectric layer comprises dielectric material and catalysed particulate;
Interior sacrifice layer contacts this catalysis dielectric layer, and water insoluble; And
Outer sacrifice layer, sacrifice layer in contact is somebody's turn to do;
This composite material dielectric layer of patterning is to form this catalysed particulate of a depression and activation;
Remove this outer sacrifice layer;
Electric conducting material is filled in this depression is positioned at the conductor layer on this activating catalytic particle with formation; And
Remove sacrifice layer in this.
3. form the method for composite material circuit board structure like claim 1 or 2, wherein this base material is a multilayer circuit board.
4. form the method for composite material circuit board structure like claim 3, wherein this base material comprises flush type line construction circuit board.
5. form the method for composite material circuit board structure like claim 1 or 2, wherein this dielectric material comprises macromolecular material.
6. form the method for composite material circuit board structure like claim 5, wherein this macromolecular material is selected from the combination of being made up of epoxy resin, polyester, acrylic acid ester, the plain polymer of fluorine, polyphenylene oxide, polyimides, phenolic resins, polysulfones, the plain polymer of silicon, BT resin, cyanic acid polyester, polyethylene, polycarbonate resin, acrylonitrile-butadiene-styrene copolymer, PET, polybutylene terephthalate, liquid crystal polymer, polyamide, nylon, kematal, polyphenylene sulfide and cyclic olefin copolymer.
7. form the method for composite material circuit board structure like claim 1 or 2, wherein this catalysed particulate comprises the nano particle of a plurality of metal complexes.
8. form the method for composite material circuit board structure like claim 7, wherein this metal complex is to be selected from by metal oxide, metal nitride, metal complex, metallo-chelate and the group that formed thereof.
9. form the method for composite material circuit board structure like claim 7, wherein this metal is selected from the group that is made up of zinc, copper, silver, gold, nickel, palladium, platinum, cobalt, rhodium, iridium, indium, iron, manganese, aluminium, chromium, tungsten, vanadium, tantalum and titanium.
10. form the method for composite material circuit board structure like claim 1 or 2, wherein this conductor layer embeds in this composite material dielectric layer.
11. like the method for claim 1 or 2 formation composite material circuit board structures, wherein the gap of this conductor layer surface peak and minimum point is not more than 3 μ m.
12. like the method for claim 1 or 2 formation composite material circuit board structures, wherein the useization process for copper forms this conductor layer.
13., wherein use laser processing with this composite material dielectric layer of patterning and this catalysed particulate of activation like the method for claim 1 or 2 formation composite material circuit board structures.
14. like the method for claim 1 formation composite material circuit board structure, wherein this at least one sacrifice layer covers this catalysis dielectric layer.
15., wherein be somebody's turn to do outer sacrifice layer and should form by identical materials by interior sacrifice layer like the method for claim 2 formation composite material circuit board structure.
16., wherein be somebody's turn to do outer sacrifice layer and should comprise material different respectively by interior sacrifice layer like the method for claim 2 formation composite material circuit board structure.
17. form the method for composite material circuit board structure like claim 2; Wherein should comprise a water-soluble material by outer sacrifice layer, wherein this water-soluble material is selected from by hydroxyl (OH), amide groups (CONH2), sulfonic group (SO3H), the carboxyl (group that functional group formed COOH).
18., wherein should cover this catalysis dielectric layer by interior sacrifice layer like the method for claim 2 formation composite material circuit board structure.
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TWI561132B (en) | 2013-11-01 | 2016-12-01 | Ind Tech Res Inst | Method for forming metal circuit, liquid trigger material for forming metal circuit and metal circuit structure |
TWI626724B (en) * | 2017-04-07 | 2018-06-11 | 思鷺科技股份有限公司 | Package structure |
TWI728410B (en) | 2019-07-18 | 2021-05-21 | 欣興電子股份有限公司 | Circuit board structure and manufacturing method thereof |
CN112291940A (en) * | 2019-07-24 | 2021-01-29 | 欣兴电子股份有限公司 | Circuit board structure and manufacturing method thereof |
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CN87107655A (en) * | 1986-12-30 | 1988-07-13 | 纳幕尔杜邦公司 | Utilize the catalyst receptor that embeds to make the method and the used element of multilayer circuit |
CN1578597A (en) * | 2003-07-28 | 2005-02-09 | 株式会社东芝 | Wiring substrate, apparatus for producing wiring substrate and method for producing the same |
CN1649471A (en) * | 2003-12-26 | 2005-08-03 | 株式会社东芝 | Resin particles and resin layer containing metal micro particles, its forming method and circuit base board |
CN101166393A (en) * | 2006-10-20 | 2008-04-23 | 富士胶片株式会社 | Laminated body used to produce printed wiring board, and method of producing printed wiring board using the same |
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2009
- 2009-05-26 CN CN2009102036242A patent/CN101902884B/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN87107655A (en) * | 1986-12-30 | 1988-07-13 | 纳幕尔杜邦公司 | Utilize the catalyst receptor that embeds to make the method and the used element of multilayer circuit |
CN1578597A (en) * | 2003-07-28 | 2005-02-09 | 株式会社东芝 | Wiring substrate, apparatus for producing wiring substrate and method for producing the same |
CN1649471A (en) * | 2003-12-26 | 2005-08-03 | 株式会社东芝 | Resin particles and resin layer containing metal micro particles, its forming method and circuit base board |
CN101166393A (en) * | 2006-10-20 | 2008-04-23 | 富士胶片株式会社 | Laminated body used to produce printed wiring board, and method of producing printed wiring board using the same |
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