CN101899645B - Ion implantation method - Google Patents
Ion implantation method Download PDFInfo
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- CN101899645B CN101899645B CN200910033893.9A CN200910033893A CN101899645B CN 101899645 B CN101899645 B CN 101899645B CN 200910033893 A CN200910033893 A CN 200910033893A CN 101899645 B CN101899645 B CN 101899645B
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Abstract
The invention discloses an ion implantation method. The method comprises the following steps of: providing an ion source; accelerating ions at one time; allowing the accelerated ions to pass through a deflecting magnetic field to screen out the ions which meet energy requirement, quality requirement and charge requirement; allowing the screened ions to pass through a correction magnetic field to adjust the shape, angle and parallelism of a beam; decelerating the ions at one time to reduce the ion energy to the required implantation energy; and bombarding a semiconductor silicon slice to implant ions. The ion implantation method finishes the entire ion implantation process by accelerating and decelerating the ions at one time; the stability of the beam during the implantation is high; and the energy pollution during the entire implantation can be reduced.
Description
[technical field]
The invention relates to a kind of semiconductor making method, a kind of method of particularly injecting about manufacture of semiconductor intermediate ion.
[background technology]
In manufacture of semiconductor, in order to form the element that can conduct electricity in the silicon chip of insulation, conventionally need to be to the different ion that adulterates in silicon chip, conducting electricity, this step is commonly referred to ion implantation.Along with the development of manufacture of semiconductor, injection condition is proposed to more and more harsher requirement, the ion implantation degree of depth is more and more shallow, and energy when injection is more and more less, and the ion dose injecting is increasing.
Existing ion injection machine table, for the injection of low-yield heavy dose, selects two deceleration modes (double decel) to complete similar injection conventionally.Be that ion first extracts from ion source by once accelerating to make it obtain higher energy, then ion, through one 90 degree magnetic deflection field, filters out the positive ion that meets energy requirement, specification of quality and electric charge requirement.Ion through magnetic deflection field screening enters the magnetic field for correcting of one 70 degree through once slowing down, and adjusts beam configuration, angle and the parallelism of ion.And then through once slow down, with lower energy injection to silicon chip.Because whole process is through twice deceleration, so be called two deceleration modes.
The ion injection method of this pair of deceleration mode, for improving the extracting power of ion, and obtains larger ion beam current, conventionally ion is in the time accelerating, added strength of electric field can be very large, and then ion can carry out twice deceleration by lower electric field, to obtain final low-yield injection.For example, under existing pair of deceleration mode, the extraction voltage of ion is 5keV, and acceleration voltage is generally 25keV, and decelerating voltage is 5keV for the first time, and decelerating voltage is 0V for the second time, and so final ion injects silicon chip with the voltage of 5keV.
Existing pair of deceleration mode, energy when ion process is accelerated by 90 degree magnetic deflection field is 5keV+25keV=30keV, during by 70 degree magnetic field for correcting, ion energy will be decremented to rapidly 5keV+5keV=10keV through slowing down for the first time, and all extremely short apart from discrete time when slowing down specifically, the speed of line can reduce a lot, and the change of shape of line is also larger, the as easy as rolling off a log flashing that causes, causes line unstable.And through after slowing down for the first time, and ion is only 10keV by the energy of 70 degree when magnetic field for correcting, the electric current in magnetic field is less than normal, and line unstable after once slowing down, the more difficult acquisition uniformity of magneticstrength less than normal, parallelism is good, and angle is line accurately.
In addition, under two deceleration modes, because ion need to be through once accelerating, twice deceleration, ion is more through the number of times of electric field, if any one electrode voltage occurs abnormal when ion passes through electric field, there is deviation in the ion energy may occur finally injecting silicon chip time, for example, finally may occur that the energy injecting is 30keV, 15keV, 10keV etc., the risk of energy contamination is higher.
Therefore, necessary existing low-yield heavy dose of ion injection method is improved, to overcome now methodical aforementioned drawback.
[summary of the invention]
The object of the present invention is to provide one can reduce energy contamination, improve the ion injection method of line stability.
For reaching aforementioned object, a kind of ion injection method of the present invention, it comprises provides ionogenic step, ion is extracted and accelerated, make ion after accelerating by magnetic deflection field to filter out the step that meets the ion that energy requirement, specification of quality and electric charge require, ion after screening is passed through to magnetic field for correcting, to adjust the step of shape, angle and parallelism of line, ion is once slowed down, make ion energy be reduced to the step of required Implantation Energy, and semi-conductor silicon chip is bombarded to the step of injecting ion.
Compared with prior art, ion injection method of the present invention, ion is through accelerating afterwards only through once slowing down, can reduce the energy contamination in whole injection process, and ion when the magnetic field for correcting than the energy state in the time accelerating still, slightly large when the two deceleration mode of energy Ratios, be relatively conducive to the adjustment of overall beam homogeneity, inject uniformly effect thereby obtain the rate of exchange, in whole injection process, line stability is higher.
[accompanying drawing explanation]
Fig. 1 is the schema of the each step of ion injection method of the present invention.
Fig. 2 is that in ion implantation process of the present invention, voltage of electric field changes schematic diagram.
[embodiment]
Refer to shown in Fig. 1, ion injection method of the present invention comprises the steps:
Step 1: ionogenic step is provided.In ion injection method of the present invention, providing in the ion injection method of ionogenic step and prior art provides ionogenic step the same, can use the different modes such as geseous discharge, the collision of electron beam to gas atom (or molecule), make neutral atom or molecular ionization, and therefrom draw ion beam current.Because the generation of ion beam current is not creation of the present invention place, no longer the generation of ionic fluid is elaborated herein.
Step 2: ion is extracted and is accelerated, make ion after accelerating by magnetic deflection field to filter out the step that meets the ion that energy requirement, specification of quality and electric charge require.
The extraction voltage that the ion beam current arranging in one embodiment of the present of invention as shown in Figure 2 penetrates from ion source is 5keV, then ion beam current is once accelerated, that wherein acceleration voltage arranges is 10keV, energy when ion beam current is through 90 degree magnetic field is E+V2=5keV+10keV=15keV, by 90 degree magnetic deflection fields, filtered out the ion that meets energy requirement, specification of quality and electric charge requirement through the ion beam current after accelerating by magnetic deflection field.In the detailed process that ion beam current screens through 90 degree magnetic deflection fields and the ion implanter of prior art, ion beam current is basically identical through the step of magnetic field screening, also repeats no more herein.
Step 3: by through the ion after magnetic deflection field screening by magnetic field for correcting, to adjust the step of shape, angle and parallelism of line.Spending shape, angle and the parallelism of magnetic field to ion beam current through one 70 again by the ion after 90 degree magnetic deflection field screenings adjusts.Concrete inflation method and inflation method of the prior art are basically identical, and therefore this specification sheets is also no longer too much described the details of this adjustment.
The energy of the ion beam current during through 70 degree magnetic field is still 5keV+10keV=15keV.With respect to two deceleration modes of prior art, the energy of method of the present invention in the time that ion beam current is adjusted is 15keV, be greater than described in aforementioned background art, 10keV when ion beam current is adjusted through 70 degree magnetic fields while adopting two deceleration mode, be conducive to the adjustment of overall beam homogeneity, inject more uniformly effect thereby can obtain.
Step 4: ion is slowed down, make ion energy be reduced to the step of required Implantation Energy.
As shown in Figure 2, after ion beam current is adjusted shape, angle and the parallelism of line through 70 degree magnetic fields, can adopt modes such as applying static that the energy of ion beam current is reduced to required Implantation Energy, example 5keV as shown in Figure 2.
Step 5: use aforementioned step of through the ion beam current slowing down, semi-conductor silicon chip being bombarded injection ion.
Ion injection method of the present invention only once accelerates ion in whole ion implantation process, then realizes ion implantation to silicon chip through once slowing down.By 90 degree magnetic fields and 70 degree magnetic field time, the energy of ion beam current is 15keV, before arriving 70 degree magnetic fields, there is not speed-down action, can not exist beam configuration variation under two deceleration modes more easily to cause flashing, cause the unsettled defect of line, and because 15keV belongs to the lower limit of normal extraction conditions, the line of 15keV is easier to for the control of injecting board entirety Electric and magnetic fields.In addition, even if electrode voltage occurs that the energy contamination that may occur mostly is 15keV most extremely in moderating process.And two deceleration modes of prior art, because acceleration voltage is 25keV, through twice deceleration, if electrode voltage is abnormal, the Implantation Energy that may occur has the multiple situations such as 30keV, 15keV, 10keV, so the risk of energy contamination is higher.
In aforementioned embodiments, be 10keV to the added voltage of acceleration of ions, this voltage is only a specific embodiment of the present invention, in other embodiments, can can guarantee under suitable line stability and inhomogeneity situation, reduce this acceleration voltage as far as possible, minimum to guarantee the possibility of energy contamination.
Claims (7)
1. an ion injection method, for providing line stable low energy ion beam, it comprises provides ionogenic step, ion is extracted and accelerated, make ion after accelerating by magnetic deflection field to filter out the step that meets the ion that energy requirement, specification of quality and electric charge require, ion after screening is passed through to magnetic field for correcting, to adjust the step of shape, angle and parallelism of line, ion is slowed down, make ion energy be reduced to the step of required Implantation Energy, and semi-conductor silicon chip is bombarded to the step of injecting ion; It is characterized in that: in aforementioned whole ion implantation process, ion is accelerated and the number of times that slows down is once.
2. an ion injection method, for providing line stable low energy ion beam, it comprises provides ionogenic step, extract and accelerate to make ion to there is the step of the first energy to ion, ion is slowed down, make ion energy be reduced to the step of injecting required the second energy, and semi-conductor silicon chip is bombarded to the step of injecting ion; It is characterized in that: it also comprises makes the ion with the first energy meet to filter out the ion that energy requirement, specification of quality and electric charge require by magnetic deflection field, and make the ion with the first energy after screening by magnetic field for correcting, to adjust the step of shape, angle and parallelism of line.
3. ion injection method as claimed in claim 2, is characterized in that: the number of times in the aforementioned step that ion is extracted and accelerated, ion being accelerated is for once.
4. ion injection method as claimed in claim 2, is characterized in that: in the aforementioned step that ion is slowed down, the number of times that ion is slowed down is for once.
5. an ion injection method, for providing line stable low energy ion beam, it comprises provides ionogenic step, ion is extracted and accelerated, make ion after accelerating by magnetic deflection field to filter out the step that meets the ion that energy requirement, specification of quality and electric charge require, ion after screening is passed through to magnetic field for correcting, to adjust the step of shape, angle and parallelism of line, ion is slowed down, make ion energy be reduced to the step of required Implantation Energy, and semi-conductor silicon chip is bombarded to the step of injecting ion; It is characterized in that: when aforementioned ion process magnetic deflection field and magnetic field for correcting, there is identical energy.
6. ion injection method as claimed in claim 5, is characterized in that: the number of times in the aforementioned step that ion is extracted and accelerated, ion being accelerated is for once.
7. ion injection method as claimed in claim 5, is characterized in that: in the aforementioned step that ion is slowed down, the number of times that ion is slowed down is for once.
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| CN200910033893.9A CN101899645B (en) | 2009-06-01 | 2009-06-01 | Ion implantation method |
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| CN200910033893.9A CN101899645B (en) | 2009-06-01 | 2009-06-01 | Ion implantation method |
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| CN101899645B true CN101899645B (en) | 2014-05-21 |
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| CN103413746A (en) * | 2013-06-25 | 2013-11-27 | 上海华力微电子有限公司 | Germanium implanting method for improving service cycle of ion implanter |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0621628A1 (en) * | 1993-03-11 | 1994-10-26 | Diamond Semiconductor Group Inc. | Ion implanter |
| US6573517B1 (en) * | 1999-07-30 | 2003-06-03 | Sumitomo Eaton Nova Corporation | Ion implantation apparatus |
| CN1437434A (en) * | 2002-02-06 | 2003-08-20 | 日新电机株式会社 | Electrostatic accelerator and its ion filling equipment |
| CN1565043A (en) * | 2000-11-20 | 2005-01-12 | 瓦里安半导体设备联合公司 | Extraction and deceleration of low energy beam with low beam divergence |
| CN101162679A (en) * | 2006-10-11 | 2008-04-16 | 日新离子机器株式会社 | Ion injector |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63257174A (en) * | 1987-04-13 | 1988-10-25 | Shimadzu Corp | Ion implantation device |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0621628A1 (en) * | 1993-03-11 | 1994-10-26 | Diamond Semiconductor Group Inc. | Ion implanter |
| US6573517B1 (en) * | 1999-07-30 | 2003-06-03 | Sumitomo Eaton Nova Corporation | Ion implantation apparatus |
| CN1565043A (en) * | 2000-11-20 | 2005-01-12 | 瓦里安半导体设备联合公司 | Extraction and deceleration of low energy beam with low beam divergence |
| CN1437434A (en) * | 2002-02-06 | 2003-08-20 | 日新电机株式会社 | Electrostatic accelerator and its ion filling equipment |
| CN101162679A (en) * | 2006-10-11 | 2008-04-16 | 日新离子机器株式会社 | Ion injector |
Non-Patent Citations (1)
| Title |
|---|
| JP昭63-257174A 1988.10.25 |
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