CN106531605B - A kind of ion implantation device and system - Google Patents
A kind of ion implantation device and system Download PDFInfo
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- CN106531605B CN106531605B CN201611124178.2A CN201611124178A CN106531605B CN 106531605 B CN106531605 B CN 106531605B CN 201611124178 A CN201611124178 A CN 201611124178A CN 106531605 B CN106531605 B CN 106531605B
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- ion implantation
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- 238000005468 ion implantation Methods 0.000 title claims abstract description 60
- 238000002955 isolation Methods 0.000 claims abstract description 92
- 239000012535 impurity Substances 0.000 claims abstract description 41
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 30
- 239000004065 semiconductor Substances 0.000 claims abstract description 28
- 230000001133 acceleration Effects 0.000 claims abstract description 10
- 150000002500 ions Chemical class 0.000 claims description 100
- 239000006148 magnetic separator Substances 0.000 claims description 38
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 17
- 229910002804 graphite Inorganic materials 0.000 claims description 17
- 239000010439 graphite Substances 0.000 claims description 17
- 102000004310 Ion Channels Human genes 0.000 claims description 16
- 238000005086 pumping Methods 0.000 claims description 9
- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
- 239000007943 implant Substances 0.000 claims description 3
- 238000007885 magnetic separation Methods 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 238000005516 engineering process Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 description 12
- 230000008569 process Effects 0.000 description 11
- 238000002513 implantation Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000000155 isotopic effect Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
- H01J37/3172—Maskless patterned ion implantation
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The present invention provides a kind of ion implantation device and system, which includes ion source chamber, accelerating tube, magnetic separation instrument, isolation chamber and object ion passage.Ion source chamber is used to generate ion beam.Accelerating tube is connected with the ion source chamber, for the ion accelerate (beamacceleration).Magnetic separation instrument is connected with the accelerating tube, for being sorted to the ion beam after acceleration.Isolation chamber is arranged on the outlet of magnetic separation instrument, for receive it is sorted after foreign ion.Object ion passage is for the object ion by be injected into semiconductor devices.Isolate chamber by setting, the foreign ion in ion beam can be absorbed, foreign ion is made not bombard on magnetic separation instrument, avoid generating damage to magnetic separation instrument and generate additional impurity, and then improve the quality of production of ion implantation technology.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to ion implantation equipment and an ion implantation system.
Background
The ion implantation technology is that the ions produced by ion source are accelerated and then ejected to the surface of material at high speed, when the ions enter the surface, they collide with the atoms in the solid and squeeze them into the interior, and a trail is excited around and at the side of the range.
Ion implantation is applied to a doping technique in semiconductor technology, which can be performed in a low-temperature environment and also has advantages of precise dose control, easy masking, and good uniformity. Dozens of semiconductor devices and integrated circuits manufactured by ion implantation doping have the characteristics of high speed, low power consumption, good stability, high yield and the like. Ion implantation is an ideal doping process for large-scale, very large-scale integrated circuits. Because the ion implantation layer is extremely thin, and the straightness of the ion beam ensures that implanted ions are almost vertically doped inwards, the transverse diffusion is extremely small, so that the lines of the circuit can be thinner, the line distance is further shortened, and the integration level is greatly improved. In addition, the high precision and high uniformity of the ion implantation technology can greatly improve the yield of the integrated circuit.
As technology and theory have been increasingly sophisticated, ion implantation has become one of the key processes in the production of semiconductor devices and integrated circuits, and ion implanters have been widely deployed in the manufacturing lines in which semiconductor devices and integrated circuits are manufactured. However, there is a problem that impurity ions are introduced into the product during the ion implantation process, and the implantation of the impurity ions into the product causes a decrease in the concentration of target ions to be implanted into the product, thereby affecting the performance of the product.
Disclosure of Invention
Accordingly, the present invention provides an ion implantation apparatus, which can prevent impurity ions from being introduced into an ion implantation process.
The technical scheme provided by the invention is as follows:
an ion implantation apparatus, comprising:
an ion source chamber for generating an ion beam comprising target ions, impurity ions;
an acceleration tube connected with the ion source chamber and used for accelerating the ion beam;
the magnetic separator is connected with the accelerating tube and is used for separating the accelerated ion beams;
the isolation chamber is arranged at the outlet of the magnetic separator and is used for receiving the impurity ions separated by the magnetic separator; and
and the target ions are provided for passing through so as to implant the target ions into a target ion channel of the semiconductor device.
Furthermore, a switch door body is arranged on one side, close to the magnetic separator, of the isolation chamber, and the switch door body is opened when the ion implantation equipment works, so that the impurity ions enter the isolation chamber.
Further, the isolation chamber comprises a first isolation sub-chamber and a second isolation sub-chamber, the first isolation sub-chamber and the second isolation sub-chamber are respectively arranged on two sides of an outlet of the magnetic separator, and the target ion channel is located between the first isolation sub-chamber and the second isolation sub-chamber.
Further, the switch door body is including setting up respectively first isolation subchamber is close to the first switch door body of magnetic separation appearance one side and setting are in the second isolation subchamber is close to the second switch door body of magnetic separation appearance one side.
Further, still include:
and the driving device is connected with the first isolation sub-chamber and the second isolation sub-chamber and is used for driving the first isolation sub-chamber and the second isolation sub-chamber to move so as to adjust the size of the target ion channel.
Further, still include:
and the control device is connected with the driving device and used for receiving an external instruction to control the driving device to move so that the target ions can pass through the target ion channel.
Furthermore, a wafer or graphite baffle for absorbing the impurity ions and a slide glass device for bearing the wafer or graphite baffle are arranged in the isolation chamber.
Further, a vacuum pumping hole is formed in the isolation chamber, and the ion implantation apparatus further includes:
and the vacuum pump is connected with the isolation chamber through the vacuum pumping hole and is used for performing vacuum pumping treatment on the isolation chamber.
Further, the isolation chamber further comprises an openable and closable chamber door.
An embodiment of the present invention further provides an ion implantation system, including the above ion implantation apparatus, the ion implantation system further includes:
injecting into the chamber; and
and the bearing device is arranged in the injection chamber and used for bearing the semiconductor device to be injected so as to inject the required doping ions into the semiconductor device by using the ion injection equipment.
In summary, in the embodiment of the present application, the isolation chamber is disposed at the outlet of the magnetic separator of the ion implantation apparatus, so that the impurity ions in the ion beam can be absorbed in the isolation chamber, and the impurity ions in the ion beam do not bombard the magnetic separator, and thus the magnetic separator is not damaged, and no additional impurity ions are generated, thereby preventing the impurity ions from being implanted into the semiconductor device along with the target ions, and improving the production quality of the semiconductor device in the ion implantation process.
In order to make the aforementioned and other objects, features and advantages of the present invention comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
Fig. 1 is a schematic structural diagram of an ion implantation apparatus according to an embodiment of the present invention.
Fig. 2 is a schematic diagram of an ion implantation apparatus in the prior art.
Fig. 3 is a schematic structural diagram of another ion implantation apparatus according to an embodiment of the present invention.
Fig. 4 is a schematic structural diagram of an ion implantation system according to an embodiment of the present invention.
Icon: 10-an ion implantation device; 11-an ion source chamber; 12-an acceleration tube; 13-magnetic sorter; 141-a first isolation subchamber; 1411-a first switch door body; 1412-first wafer or graphite baffle; 1413-a first slide device; 1414-a first chamber door; 142-a second isolation subchamber; 1421 — a second switch door body; 1422 — second wafer or graphite baffle; 1423 — second slide device; 1424 — second chamber door; 15-target ion channel; 16-a drive device; 17-a control device; 18-a vacuum pump; 20-a semiconductor device; 30-carrying means.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present invention without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures. Meanwhile, in the description of the present invention, the terms "first", "second", and the like are used only for distinguishing the description, and are not to be construed as indicating or implying relative importance.
As shown in fig. 1, an embodiment of the present application provides an ion implantation apparatus 10, including: an ion source chamber 11, an acceleration tube 12, a magnetic sorter 13, an isolation chamber, and a target ion channel 15.
Specifically, the ion source chamber 11 is used to generate an ion beam including target ions 110 and impurity ions. The ion implantation apparatus 10 changes the electrical properties of a specific region in a semiconductor device by generating ions and implanting an ion beam having a certain energy and a certain amount into the semiconductor device (e.g., the semiconductor device 20 shown in fig. 4). It will be appreciated that the target ions 110 in the ion beam are particular ions that need to be implanted into the semiconductor device, while other ions from which the target ions 110 are removed are impurity ions that do not need to be implanted into the semiconductor device, such as isotopic ions or other types of ions that do not need to be implanted into the semiconductor device. Since the ion source chamber 11 for generating the ion beam generates the target ions 110 and also generates a certain amount of impurity ions, and isotope ions of the target ions 110 are introduced to distinguish the target ions 110 from impurity ions having similar mass when the ion implantation process is performed. Impurity ions, if implanted into a semiconductor device, can affect the normal performance of the semiconductor device and, therefore, need to be removed from the ion beam.
An acceleration tube 12 is connected to the ion source chamber 11 for accelerating the ion beam. After the ion beam is generated in the ion source chamber 11, the ion beam needs to be accelerated through the acceleration tube 12. The ion beam may be accelerated, typically by an attracting electrode.
The magnetic separator 13 is connected to the accelerating tube 12, and is configured to separate the accelerated ion beam. The magnetic separator 13 is a component for separating ion beams, and generally includes a vacuum chamber having an arc shape and a pair of magnets disposed on an inner wall of the vacuum chamber. The charged ion beam obtains a certain energy after being accelerated by the acceleration tube 12. When the charged ion beam moves in the magnetic field of the magnetic separator 13 in a direction perpendicular to the direction of the magnetic field, the ions in the ion beam are influenced by the lorentz force and move in a circular motion. The radius of circular motion of different ions is different due to the difference of ion mass, velocity and coulomb charge.
When a plurality of ions in one ion beam pass through the magnetic field without changing the magnetic field strength in the magnetic separator 13, ions having a large energy-to-mass ratio to electric charges deviate in a direction in which the magnetic separator 13 is away from the acceleration tube 12, and ions having a small energy-to-mass ratio to electric charges deviate in a direction in which the magnetic separator 13 is close to the acceleration tube 12. Ions having a ratio of energy to mass to charge that meets a predetermined ratio pass through the magnetic separator 13. By adjusting the magnetic field strength of the magnetic separator 13, the target ions 110 in the ion beam can be adjusted to pass through the magnetic separator 13, while the impurity ions cannot pass through.
In the prior art, as shown in fig. 2, a graphite baffle is arranged on the side wall of the magnetic separator 13, and the magnetic field intensity of the magnetic separator 13 is adjusted to make impurity ions bombard the graphite baffle, so that the impurity ions are absorbed. However, when the ion implantation apparatus 10 works for a long time, a large amount of impurity ions are absorbed by the graphite baffle, which not only causes a certain degree of damage to the apparatus, but also sputters more new impurity ions when the impurity ions bombard the graphite baffle, affects the ions implanted into the semiconductor device, and reduces the production quality of ion implantation.
Therefore, in the embodiment of the present application, the isolation chamber may be disposed at the outlet of the magnetic separator 13 by being configured to absorb the impurity ions. The shape and size of the isolation chamber may be determined as is practical.
Specifically, as shown in fig. 1, the isolation chamber may include a first isolation sub-chamber 141 and a second isolation sub-chamber 142, and the first isolation sub-chamber 141 and the second isolation sub-chamber 142 are respectively disposed at two sides of the outlet of the magnetic separator 13 and respectively receive the impurity ions. Also, a certain gap may be set between the first and second isolation sub-chambers 141 and 142, which forms the target ion channel 15 through which the target ions 110 pass.
By adjusting the magnetic field intensity of the magnetic separator 13 and the size of the gap between the first isolation sub-chamber 141 and the second isolation sub-chamber 142, impurity ions and isotope ions are recovered by the first isolation sub-chamber 141 and the second isolation sub-chamber 142, and simultaneously, the target ions 110 enter the subsequent injection chamber through the target ion channel 15.
In addition, a switch door body is arranged on one side of the isolation chamber close to the magnetic separator 13, and the switch door body is opened when the ion implantation equipment 10 works, so that the impurity ions enter the switch door body inside the isolation chamber. The opening and closing door bodies may include a first opening and closing door body 1411 respectively disposed on a side of the first isolation sub-chamber 141 close to the magnetic sorter 13 and a second opening and closing door body 1421 disposed on a side of the second isolation sub-chamber 142 close to the magnetic sorter 13.
The first switch door 1411 and the second switch door 1421 may be made to be retractable and opened at the beginning of the implantation process, and when the impurity ions pass through the magnetic separator 13, the impurity ions enter the first isolation sub-chamber 141 and the second isolation sub-chamber 142 through the first switch door 1411 and the second switch door 1421. The first and second switch door bodies 1411 and 1421 may be closed after the injection process is completed.
In different ion implantation processes, the types of the target ions 110 are different, the magnetic field strength of the magnetic separator 13 is different, and the movement path of the target ions 110 after passing through the magnetic separator 13 is different. In order to adjust the size of the target ion channel 15 to accommodate different types of target ions 110, and to expand the range of use of the ion implantation apparatus 10, a driving device 16 may be further provided in connection with the first and second isolation sub-chambers 141, 142. As shown in fig. 3, the first and second isolation sub-chambers 141 and 142 are driven to move by the driving device 16, thereby adjusting the size of the target ion channel 15. The drive means 16 may be a servo motor or a stepping motor or the like.
Further, the ion implantation apparatus 10 may further include a control device 17 connected to the driving device 16 for receiving an external command to control the driving device 16 to move, so that the target ions 110 can pass through the target ion channel 15. The control device 17 can set the distance parameter between the first sub-isolation chamber 141 and the second sub-isolation chamber 142, and further drive the first sub-isolation chamber 141 and the second sub-isolation chamber 142 to move through the driving device 16, so that the size of the target ion channel 15 formed by the gap between the first sub-isolation chamber 141 and the second sub-isolation chamber 142 meets the requirement of ion implantation. Generally, the first and second isolation sub-chambers 141 and 142 move the same distance.
In addition, a wafer or graphite baffle for absorbing the impurity ions and a slide glass device for bearing the wafer or graphite baffle are arranged in the isolation chamber. After entering the isolation chamber, the impurity ions can be absorbed by the wafer or the graphite baffle. So that the impurity ions are not bombarded onto the magnetic separator 13, and the magnetic separator 13 is not damaged, and additional impurity ions are not generated due to sputtering. In particular, the disc or graphite baffle may be a first disc or graphite baffle 1412 disposed in the first isolation subchamber 141 and a second disc or graphite baffle 1422 disposed in the second isolation subchamber 142. The slide device can include a first slide device 1413 disposed in the first separator chamber 141 and a second slide device 1423 disposed in the second separator chamber 142.
In order to ensure that the target ions 110 are not interfered by other particles in the environment during the implantation operation, the ion implantation apparatus 10 needs to be in a vacuum environment during the ion implantation operation. Therefore, the isolation chamber is provided with a vacuum pumping hole, and the ion implantation apparatus 10 further includes a vacuum pump 18 connected to the isolation chamber through the vacuum pumping hole and configured to perform a vacuum pumping process on the isolation chamber. The vacuum environment of the isolation chamber can be maintained by the vacuum pump 18, so that the opening and closing of the switch door on the isolation chamber does not affect the vacuum environment of the entire ion implantation apparatus 10.
In addition, still be provided with mobilizable chamber door on the isolation cavity, can change the disk or the graphite baffle inside the isolation cavity through the chamber door, also can clear up inside the isolation cavity and maintain. In particular, the gates may include a first gate 1414 disposed on the first isolation subchamber 141 and a second gate 1424 disposed on the second isolation subchamber 142.
In summary, in the embodiment of the present application, by providing the isolation chamber at the outlet of the magnetic separator 13 of the ion implantation apparatus 10, the impurity ions in the ion beam can be absorbed in the isolation chamber, so that the impurity ions in the ion beam do not bombard the magnetic separator 13, and thus the magnetic separator 13 is not damaged, and no additional impurity ions are generated. And impurity ions are prevented from being implanted into the semiconductor device along with the target ions 110, so that the production quality of the semiconductor device in the ion implantation process is improved.
As shown in fig. 4, an embodiment of the present application further provides an ion implantation system, which includes the above ion implantation apparatus 10, and further includes an implantation chamber and a carrying device 30 disposed in the implantation chamber for carrying the semiconductor device 20, so that the ion implantation apparatus 10 can implant target ions to be implanted onto the semiconductor device 20 in the implantation chamber.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention. It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (8)
1. An ion implantation apparatus, comprising:
an ion source chamber for generating an ion beam comprising target ions and impurity ions;
an acceleration tube connected with the ion source chamber and used for accelerating the ion beam;
the magnetic separator is connected with the accelerating tube and is used for separating the accelerated ion beams;
the isolation chamber is arranged at the outlet of the magnetic separator and is used for receiving the impurity ions separated by the magnetic separator; and
a target ion channel for the target ions to pass through to implant the target ions into a semiconductor device; wherein,
a switch door body is arranged on one side, close to the magnetic separator, of the isolation chamber and is opened when the ion implantation equipment works so that the impurity ions enter the isolation chamber;
the isolation chamber comprises a first isolation sub-chamber and a second isolation sub-chamber, the first isolation sub-chamber and the second isolation sub-chamber are respectively arranged on two sides of an outlet of the magnetic separator, and the target ion channel is located between the first isolation sub-chamber and the second isolation sub-chamber.
2. The ion implantation apparatus according to claim 1, wherein the switching door body comprises a first switching door body disposed on a side of the first isolation sub-chamber adjacent to the magnetic separator and a second switching door body disposed on a side of the second isolation sub-chamber adjacent to the magnetic separator, respectively.
3. The ion implantation apparatus of claim 1, further comprising:
and the driving device is connected with the first isolation sub-chamber and the second isolation sub-chamber and is used for driving the first isolation sub-chamber and the second isolation sub-chamber to move so as to adjust the size of the target ion channel.
4. The ion implantation apparatus of claim 3, further comprising:
and the control device is connected with the driving device and used for receiving an external instruction to control the driving device to move so that the target ions can pass through the target ion channel.
5. The ion implantation apparatus of claim 1, wherein a wafer or graphite baffle for absorbing the impurity ions and a slide device for carrying the wafer or graphite baffle are disposed in the isolation chamber.
6. The ion implantation apparatus of claim 1, wherein the isolation chamber defines a vacuum pumping aperture, the ion implantation apparatus further comprising:
and the vacuum pump is connected with the isolation chamber through the vacuum pumping hole and is used for performing vacuum pumping treatment on the isolation chamber.
7. The ion implantation apparatus of claim 1, wherein the isolation chamber further comprises an openable and closable chamber door.
8. An ion implantation system comprising the ion implantation apparatus of any of claims 1 to 7, the ion implantation system further comprising:
injecting into the chamber; and
and the bearing device is arranged in the injection chamber and used for bearing the semiconductor device so as to inject the required doping ions into the semiconductor device by using the ion injection equipment.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201611124178.2A CN106531605B (en) | 2016-12-08 | 2016-12-08 | A kind of ion implantation device and system |
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| CN201611124178.2A CN106531605B (en) | 2016-12-08 | 2016-12-08 | A kind of ion implantation device and system |
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| CN106531605B true CN106531605B (en) | 2018-06-05 |
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| CN109243958A (en) * | 2018-09-13 | 2019-01-18 | 德淮半导体有限公司 | Ion Implantation Equipment and ion implantation method |
| CN109686644A (en) * | 2018-12-07 | 2019-04-26 | 德淮半导体有限公司 | Ion Implantation Equipment and its working method |
| CN114536113B (en) * | 2022-04-27 | 2022-07-29 | 四川欧瑞特光电科技有限公司 | Negative pressure device and ion beam polishing machine |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102067270A (en) * | 2008-06-25 | 2011-05-18 | 艾克塞利斯科技公司 | Low-inertia multi-axis multi-directional mechanically scanned ion implantation system |
| TW201447960A (en) * | 2013-06-14 | 2014-12-16 | Sen Corp | High-energy ion implanter |
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| JPH04319328A (en) * | 1991-04-19 | 1992-11-10 | Mitsubishi Electric Corp | Dish washer |
| WO2006133041A2 (en) * | 2005-06-03 | 2006-12-14 | Axcelis Technologies, Inc. | Beam stop and beam tuning methods |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102067270A (en) * | 2008-06-25 | 2011-05-18 | 艾克塞利斯科技公司 | Low-inertia multi-axis multi-directional mechanically scanned ion implantation system |
| TW201447960A (en) * | 2013-06-14 | 2014-12-16 | Sen Corp | High-energy ion implanter |
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