CN101887868A - Method of fabricating array substrate - Google Patents

Method of fabricating array substrate Download PDF

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Publication number
CN101887868A
CN101887868A CN200910224915XA CN200910224915A CN101887868A CN 101887868 A CN101887868 A CN 101887868A CN 200910224915X A CN200910224915X A CN 200910224915XA CN 200910224915 A CN200910224915 A CN 200910224915A CN 101887868 A CN101887868 A CN 101887868A
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layer
pattern
active layer
metal material
grid
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CN101887868B (en
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崔熙东
李相杰
徐诚模
李晙珉
安炳喆
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LG Display Co Ltd
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LG Display Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT

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  • Power Engineering (AREA)
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  • Thin Film Transistor (AREA)
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Abstract

A method of fabricating an array substrate includes sequentially forming a first metal layer, a first inorganic insulating layer and an intrinsic amorphous silicon layer on a substrate, the first metal layer including a first metallic material layer and a second metallic material layer; crystallizing the intrinsic amorphous silicon; forming a gate electrode, a gate line, a gate insulating layer and an active layer; forming an interlayer insulating layer including first and second contact holes respectively exposing both sides of the active layer; forming first and second ohmic contact patterns respectively contacting the both sides of the active layers, a source electrode, a drain electrode, and a data line connecting the source electrode; forming a passivation layer on the source electrode, the drain electrode; and forming a pixel electrode on the passivation layer and contacting the drain electrode.

Description

The method of manufacturing array substrate
The application requires the right of the korean patent application 10-2009-0042494 communique submitted in Korea S on May 15th, 2009, by quoting this application is incorporated in this specification.
Technical field
The present invention relates to array base palte, more specifically, relate to the array base palte that can prevent that active layer is impaired and have excellent properties.
Background technology
Current society steps into the information age firmly, and the flat-panel display device with excellent properties such as slim, lightweight and low energy consumption is also carried out thereupon.
In these devices, active array type liquid crystal display (LCD) device is owing to have high-contrast and be enough to show the characteristic of dynamic image, replaced cathode ray tube (CRT) and is widely used among notebook computer, monitor and the TV etc.
On the other hand, ORGANIC ELECTROLUMINESCENCE DISPLAYS (OELD) device is also used widely because of its high brightness and low driving voltage.In addition, because the OELD device is an emissive type, so the OELD device can be realized high-contrast, slim and fast-response time.
LCD device and OELD device all need array base palte, wherein, are used to control the opening and closing of this pixel in each pixel as the thin-film transistor (TFT) of switch element.
Fig. 1 is the sectional view of a pixel region of the array base palte of display background technology.Among Fig. 1, on the substrate 11 and will in this place forms the switch region TrA of TFT Tr (TFT transistor), be formed with grid 15.Be formed with the grid line (not shown) that is connected in grid 15 along first direction.On grid 15 and grid line, be formed with gate insulation layer 18.Be formed with semiconductor layer 28 on the gate insulation layer 18 and in switch region TrA, described semiconductor layer 28 comprises the active layer 22 of intrinsic amorphous silicon and is doped with the ohmic contact layer 26 of the amorphous silicon of impurity.Be formed with source electrode 36 and drain electrode 38 on the semiconductor layer 28 and in switch region TrA.Source electrode 36 is spaced apart with drain electrode 38.Be formed with the data wire 33 that is connected in source electrode 36 along second direction.Data wire 33 intersects to define pixel region P with grid line.Grid 15, gate insulation layer 18, semiconductor layer 28, source electrode 36 and drain and 38 constituted TFT Tr.
Formation comprises the passivation layer 42 of drain contact hole 45 to cover TFT Tr.On passivation layer 42, be formed with the pixel electrode 50 that is connected in drain electrode 38 by drain contact hole 45.In Fig. 1, below data wire 33, be formed with first pattern 27 and second pattern 23, these two kinds of patterns are respectively by forming with ohmic contact layer 26 and active layer 22 identical materials.
In the semiconductor layer 28 of TFT Tr, the active layer 22 of intrinsic amorphous silicon has the difference on the thickness.That is, active layer 22 has first thickness t 1 at the middle part, has second thickness t 2 at sidepiece.First thickness t 1 is different with second thickness t 2.The performance of TFT Tr is because of the thickness difference deterioration of active layer 22.The thickness difference of active layer 22 comes from following manufacturing process with reference to Fig. 2 A to Fig. 2 E explanation.
Fig. 2 A to Fig. 2 E is the sectional view of manufacturing process of the array base palte of explanation background technology.For ease of explanation, the grid and the gate insulation layer of not shown active layer below.
Among Fig. 2 A, on substrate 11, be formed with intrinsic amorphous silicon layer 20 successively, be doped with the amorphous silicon layer 24 and the metal level 30 of impurity.Then, by coating photoresist (PR) material, on metal level 30, form photoresist (PR) layer (not shown).Utilize exposed mask to make PR layer exposure, and make it to develop and have a PR pattern 91 of the 3rd thickness and have the 2nd PR pattern 92, the four thickness of the 4th thickness less than the 3rd thickness with formation.The one PR pattern 91 has covered the part that is formed with source electrode and drain electrode of metal level 30, and the 2nd PR pattern 92 has covered the space between source electrode and the drain electrode.The one PR pattern 91 is positioned at the both sides of the 2nd PR pattern 92.The other parts of metal level 30 expose.
In Fig. 2 B, utilize a PR pattern 91 and the 2nd PR pattern 92 to come metal level 30 and the amorphous silicon layer that is doped with impurity 24 (Fig. 2 A) and the intrinsic amorphous silicon layer 20 (Fig. 2 A) below the metal level 30 that exposes of etch exposed as etching mask.As a result, active layer 22, the amorphous silicon pattern 25 that is doped with impurity and source electrode-drain pattern 31 on substrate 11, have been formed.
In Fig. 2 C, a PR pattern 91 and the 2nd PR pattern 92 (Fig. 2 B) are carried out ashing processing, thereby remove the 2nd PR pattern 92 with the 4th thickness.Partly remove a PR pattern 91, thereby on source electrode-drain pattern 31, form the thickness three PR pattern 93 littler than a PR pattern 91.By removing the 2nd PR pattern 92, the middle part of source electrode-drain pattern 31 obtains exposing.
In Fig. 2 D, the middle part of the exposure of etching source electrode-drain pattern 31 (Fig. 2 C) is to form source electrode separated from one another 36 and drain electrode 38.As a result, the middle part that is doped with the amorphous silicon pattern 25 of impurity obtains exposing by source electrode 36 and drain electrode 38.
In Fig. 2 E, the amorphous silicon pattern 25 (Fig. 2 D) that is doped with impurity is carried out the dry etching operation, to remove the amorphous silicon pattern 25 that is doped with impurity.As a result, below source electrode 36 and drain electrode 38, form ohmic contact layer 26.
In the case, the dry etching operation need be carried out the long period to remove the amorphous silicon pattern that is doped with impurity 25 of the below that exposes by the space between source electrode 36 and the drain electrode 38 fully.As a result, the middle part that is positioned at the active layer 22 of the amorphous silicon pattern that is doped with impurity 25 belows of removing is partly removed by the dry etching operation, makes active layer 22 have difference on the thickness (t1 ≠ t2).If the time that the dry etching operation is carried out falls short of, the amorphous silicon pattern 25 that then is doped with impurity can partly remain on the active layer 22, makes the major cycle of TFT Tr (Fig. 1).The difference in thickness of active layer 22 is above-mentioned array base palte inevitable results of manufacturing process.
In addition, because active layer 22 is partly removed in dry etching operation process, therefore should form the intrinsic amorphous silicon layer 20 of the active layer 22 of enough thick (surpassing 1000 dusts), and this is disadvantageous for production cost and manufacturing time aspect.
TFT Tr is the very important element of array base palte.TFT Tr is arranged in each pixel region and is connected in grid line and data wire, makes signal optionally be provided in pixel electrode in each pixel region by TFT Tr.Regrettably, because the active layer of TFT Tr formed by intrinsic amorphous silicon, thereby there are some problems.For example, when applying electric field when irradiate light is on active layer or to active layer, active layer becomes metastable state, and this makes the fail safe existing problems of TFT Tr.In addition, because the mobility of charge carrier rate is lower in the passage of active layer, so comprise the driving element that the TFT Tr of the active layer of intrinsic amorphous silicon is not enough to become the OELD device.
For addressing these problems, introduced the TFT of the active layer that comprises polysilicon, described polysilicon is formed by the Crystallization Procedure crystallization that utilizes laser beam by intrinsic amorphous silicon.Yet referring to Fig. 3 (this figure is the sectional view that shows the TFT Tr of the semiconductor layer that comprises polysilicon 55 that is used for the background technology array base palte), semiconductor layer 55 comprises the first district 55a and is positioned at the second district 55b of 55a both sides, first district.Should be in the second district 55b of semiconductor layer 55 impurity of doped with high concentration.Therefore, the doping operation that need be used for second area 55b also need be used for the injection device of this doping operation, and this significantly increases production cost.In addition, also need new production line.
Summary of the invention
For these reasons, the present invention is intended to make the array base palte of the above problem that the restriction of having eliminated background technology in fact and defective bring.
Will be described hereinafter other features and advantages of the present invention, Partial Feature and advantage are conspicuous from describe, or can know from the practice of the present invention.Purpose of the present invention and other advantage will realize or reach by specifically noted structure in specification and its claim and accompanying drawing.
For realizing these and other advantage and purpose according to the invention, describe as this paper embody and generality, the method of manufacturing array substrate comprises: form the first metal layer, first inorganic insulation layer and intrinsic amorphous silicon layer successively on the substrate of the switch region in defining pixel region and described pixel region, described the first metal layer comprises first metal material layer and covers second metal material layer of the upper surface of described first metal material layer, wherein, described first metal material layer has resistance and the fusing point that is lower than described second metal material layer; With described intrinsic amorphous silicon crystallization is the intrinsic polysilicon layer; By making described intrinsic polysilicon layer, described first inorganic insulation layer and described the first metal layer patterning form grid, being connected in grid line, gate insulation layer and the active layer of described grid, described grid, gate insulation layer and active layer are arranged in described switch region; Form the interlayer insulating film that comprises first and second contact holes on described active layer, described first and second contact holes expose the both sides of described active layer respectively; Form respectively by described first and second contact holes contact the first and second ohmic contact patterns of the both sides of described active layer, in the source electrode on the described first ohmic contact pattern, drain electrode and the data wire that is connected described source electrode on the described second ohmic contact pattern, described data wire intersects to define described pixel region with described grid line; Form passivation layer on described source electrode, drain electrode and data wire, described passivation layer comprises the drain contact hole that exposes described drain electrode; With on described passivation layer, form the pixel electrode that contacts described drain electrode by described drain contact hole.
Should be appreciated that aforementioned general description and following detailed description all are exemplary and explanat, its purpose provides claimed of the present invention further specifying.
Description of drawings
Accompanying drawing is contained in this providing further understanding of the present invention, the part that it is merged in this specification and has constituted this specification, and the description of drawings embodiments of the present invention, and be used from specification one and explain principle of the present invention.
Fig. 1 is the sectional view of a pixel region of the array base palte of display background technology;
Fig. 2 A to Fig. 2 E is the sectional view of manufacturing process of the array base palte of explanation background technology;
Fig. 3 is the sectional view of TFT that shows the semiconductor layer that comprises polysilicon of the array base palte be used for background technology;
Fig. 4 A to Fig. 4 K is the sectional view of manufacturing process that shows the array base palte of illustrative embodiments of the present invention; With
Fig. 5 is the sectional view of manufacturing process of active layer of array base palte that shows the illustrative embodiments of change of the present invention.
Embodiment
To discuss in detail preferred implementation below, the embodiment of preferred implementation has illustrated in the accompanying drawings.
Fig. 4 A to Fig. 4 K is the sectional view of manufacturing process that shows the array base palte of illustrative embodiments of the present invention.In pixel region, define and to form the switch region of TFT.
At first, shown in Fig. 4 A, be selected from three kinds of materials of the first metal material group that comprises aluminium (Al), aluminium alloy, copper (Cu), Cu alloy, titanium (Ti), molybdenum (Mo) and titanium-molybdenum alloy (MoTi) by deposition, on substrate 101, form the first metal layer 105 that comprises first to the 3rd subgrade 105a, 105b and 105c.The first metal layer 105 has the thickness of about 1000 dusts～5000 dusts.For example, first to the 3rd subgrade 105a～105c can be a kind of among Mo/Al (or Al alloy)/Mo, Ti/Cu (or Cu alloy)/Ti, MoTi/Cu (or Cu alloy)/MoTi and Mo/Cu (or Cu alloy)/Mo.Select as another kind, the first metal layer 105 can have double-decker.In the case, the bilayer of the first metal layer 105 can be Al alloy/Mo.
Because the first metal layer 105 has double-decker or three-decker, therefore can minimize the thermal deformation of the first metal layer 105 in solid-phase crystallization (SPC) the operation process, carrying out described SPC operation is for the crystallization intrinsic amorphous silicon.In addition, because the first metal layer 105 comprises a kind of in Al, Al alloy, Cu and the Cu alloy that all has low resistive, therefore can minimize the resistance of grid line.
By deposition inorganic insulating material such as silicon dioxide or silicon nitride, on the first metal layer 105, form first inorganic insulation layer 108.First inorganic insulation layer 108 has single layer structure or double-decker.First inorganic insulation layer 108 of individual layer is formed by silicon dioxide.The first double-deck inorganic insulation layer 108 comprises silicon nitride lower floor and silicon dioxide upper strata.That is, the upper surface of first inorganic insulation layer 108 are silicon dioxide films with improve with after a while with the contact of the intrinsic amorphous silicon layer that forms.Because the contact of silicon dioxide layer and intrinsic amorphous silicon layer is better than the contact of silicon nitride layer and intrinsic amorphous silicon layer, therefore the upper strata of first inorganic insulation layer 108 comprises silicon dioxide layer.In addition, because the processing time of silicon nitride layer is shorter than the processing time of silicon dioxide, therefore the lower floor of first inorganic insulation layer 108 comprises silicon nitride layer.First inorganic insulation layer 108 has the thickness of about 500 dusts～4000 dusts.
By the deposition intrinsic amorphous silicon, on first inorganic insulation layer 108, form intrinsic amorphous silicon layer 110.First inorganic insulation layer 108 and intrinsic amorphous silicon layer 110 all utilize the chemical vapor deposition (CVD) device to form successively by changing reacting gas.
Intrinsic amorphous silicon layer 110 has the thickness of about 400 dusts～600 dusts.In the array base palte of background technology, the active layer of intrinsic amorphous silicon should have the thickness that surpasses 1000 dusts, has partly removed active layer because be used for the dry etching operation of ohmic contact layer.Yet because intrinsic amorphous silicon layer 110 is not exposed to the dry etching operation, so intrinsic amorphous silicon layer 110 has the thickness that can play the active layer effect.That is, intrinsic amorphous silicon layer 110 has the less thickness of about 400 dusts～600 dusts, and this makes production cost and manufacturing time all obtain reduction.
Next, shown in Fig. 4 B,, carry out the SPC operation for improving the mobility of intrinsic amorphous silicon layer 110 (Fig. 4 A).By the SPC operation, intrinsic amorphous silicon layer 110 crystallizations form intrinsic polysilicon layer 111.For example, the SPC operation is thermal crystalline operation or alternating magnetic field Crystallization Procedure.In the thermal crystalline operation, in about 600 ℃～700 ℃ temperature heating intrinsic amorphous silicon layer 110.In the alternating magnetic field Crystallization Procedure, use the alternating magnetic field crystallization apparatus in about 600 ℃～700 ℃ temperature crystallization intrinsic amorphous silicon layer 110.
In the present invention, because before with the first metal layer 105 patternings, carry out the SPC operation, so the first metal layer 105 has covered the whole surface of substrate 101 in SPC operation process.Therefore, the thermal deformation of this first metal layer 105 that further the SPC operation is caused minimizes.
Usually, all be that metal layer patternization is being carried out Crystallization Procedure after forming grid line and grid.In the case, the side surface of metal level is exposed to the SPC operation, produces thermal deformation.Even metal level has double-decker or three-decker, low resistance metal layer is exposed to the SPC operation also can produce thermal deformation.Therefore, can not obtain desirable grid line or grid.As a result, the position relation between each active layer of grid and polysilicon, between source electrode and the drain electrode changes, and makes the performance degradation of TFT.
Yet, in the present invention, before with the first metal layer 105 patternings, carry out the SPC operation, the whole surface of the first metal layer 105 covered substrates 101 in SPC operation process, feasible layer of low resistance material as the bottom in the intermediate layer in the three-decker (that is the second subgrade 105b) or the double-decker is not exposed to the SPC operation.As a result, the thermal deformation with the first metal layer 105 minimizes.In the first metal layer 105 with three-decker, the first subgrade 105a that is positioned at the bottom has high melt point with the 3rd subgrade 105c that is positioned at the top, thereby does not have damage.Therefore, by making the first metal layer 105 patternings, can obtain desirable grid line and grid, and can prevent the deterioration of TFT performance.Have resistance and fusing point as the second subgrade 105b in intermediate layer less than the first subgrade 105a and the 3rd subgrade 105c.
Next, shown in Fig. 4 C,, on intrinsic polysilicon layer 111, form photoresist (PR) layer (not shown) by coating photoresist (PR) material.The exposed mask (not shown) that comprises transmission part, stop portions and half transmitting part is set on the PR layer.Half transmitting partly has less than transmission part and greater than the light transmittance of stop portions.The half transmitting part is formed by slit or a plurality of coating.Exposed mask can be called as half-tone mask.Make PR layer exposure by exposed mask, and make it to develop and have a PR pattern 191a of first thickness and have the 2nd PR pattern 191b of second thickness with formation, second thickness is greater than first thickness.The one PR pattern 191a is corresponding to the part that will be formed with grid line, and the 2nd PR pattern 191b is corresponding to the part that will be formed with grid.That is, the 2nd PR pattern 191b is arranged in switch region TrA, and a PR pattern 191a is by the end extension of the 2nd PR pattern 191b.If grid is vertically outstanding by grid line, then a PR pattern 191a extends along the direction perpendicular to the 2nd PR pattern 191b in plane graph.Other parts are exposed by a PR pattern 191a and the 2nd PR pattern 191b.
Next, shown in Fig. 4 D, first inorganic insulation layer 108 (Fig. 4 C) and the first metal layer 105 (Fig. 4 C) under intrinsic polysilicon layer 111 (Fig. 4 C) that etching exposes by a PR pattern 191a and the 2nd PR pattern 191b and the intrinsic polysilicon layer 111 that is positioned at exposure, thus formation is stacked in grid 107, gate insulation layer 109 and intrinsic polysilicon pattern 112 on the substrate 101.Simultaneously, on the border of pixel region P, form the grid line 106 that stretches out by grid 107.Grid 107 has the three-decker that comprises bottom 107a, intermediate layer 107b and top layer 107c, and grid line 106 has the three-decker that comprises bottom 106a, intermediate layer 106b and top layer 106c.The bottom 107a of grid 107 and top layer 107c form by having the high-melting point metal material, and the intermediate layer 107b of grid 107 forms by having low-resistance metal material.The bottom 106a of grid line 106 and top layer 106c form by having the high-melting point metal material, and the intermediate layer 106b of grid line 106 forms by having low-resistance metal material.
Next, shown in Fig. 4 E, a PR pattern 191a and the 2nd PR pattern 191b (Fig. 4 D) are carried out the ashing operation, removing a PR pattern 191a, and form the 3rd PR pattern 191c corresponding to grid 107 from the 2nd PR pattern 191b.As a result, by removing a PR pattern 191a, a side of intrinsic polysilicon layer 112 is exposed.That is, the part corresponding to grid line 106 of intrinsic polysilicon pattern 112 is exposed.Because the thickness of the 2nd PR pattern 191b is also because of the ashing operation reduces, therefore, the 3rd PR pattern 191c has the thickness that is lower than the 2nd PR pattern 191b.
Next, shown in Fig. 4 F, intrinsic polysilicon layer 112 of etch exposed (Fig. 4 E) and gate insulation layer 109 are to expose grid line 106.Intrinsic polysilicon pattern 112 is defined as active layer 115 because of the 2nd PR pattern 191b and the residual part of the 3rd PR pattern 191c.Owing to utilizing the 3rd PR pattern 191c to make active layer 115 and gate insulation layer 109 patternings, thus active layer 115 and gate insulation layer 109 have can be overlapping fully the shape that is essentially the same as each other, size and position.
On the other hand, with reference to Fig. 5 (this figure is the sectional view of manufacturing process of active layer of array base palte that shows the illustrative embodiments of change of the present invention), only the intrinsic polysilicon pattern (not shown) of etch exposed is to form active layer 115.That is etch-gate insulating barrier 109 not.Therefore, gate insulation layer has shape, size and the position identical with the composition element of grid 107 and grid line 106.
Refer again to Fig. 4 A to Fig. 4 K, shown in Fig. 4 G, the 3rd PR pattern 191c (Fig. 4 F) is carried out stripping process, to remove the 3rd PR pattern 191c and to expose active layer 115.
Next, shown in Fig. 4 H,, on active layer 115 and grid line 106, form the second inorganic insulation layer (not shown) by deposition inorganic insulating material such as silicon dioxide or silicon nitride.
By mask process with the second inorganic insulation layer patterning, comprise the interlayer insulating film 122 of two contact holes 125 with formation, described mask process comprise the step that forms the PR layer, the step of utilizing exposed mask exposure PR layer, development PR layer with the step that forms the PR pattern, utilize the PR pattern to come the step of etching second inorganic insulation layer and peel off the step of PR pattern as etching mask.Two sidepieces of active layer 115 are exposed by contact hole 125.The part interlayer insulating film 122 that the middle part of active layer 115 is touched between the hole 125 covers.The interlayer insulating film 122 that has covered the middle part of active layer 115 plays the effect that etching stops thing (etch-stopper).
Next, shown in Fig. 4 I, the amorphous silicon and second metal material of impurity are arranged, on the interlayer insulating film 122 that comprises contact hole 125, form the amorphous silicon layer (not shown) and the second metal level (not shown) that is doped with impurity by dopant deposition successively.The amorphous silicon layer that is doped with impurity has the thickness of about 100 dusts～300 dusts.Second stacks of metal layers is stacked on the amorphous silicon layer that is doped with impurity, and is formed by one of molybdenum (Mo), chromium (Cr) and molybdenum-titanium alloy (MoTi).
Be doped with in formation before the amorphous silicon layer of impurity, can form thickness on interlayer insulating film 122 by the deposition intrinsic amorphous silicon is the barrier layer (not shown) of about 50 dusts～100 dusts.Contact strength between intrinsic amorphous silicon and the intrinsic polysilicon is greater than the contact strength between amorphous silicon that is doped with impurity and the intrinsic polysilicon.Therefore, the barrier layer that makes intrinsic amorphous silicon is at active layer 115 and be doped with between the amorphous silicon layer of impurity, with the contact strength between the active layer 115 that improves intrinsic polysilicon and the amorphous silicon layer that is doped with impurity.The barrier layer is not absolutely necessary.
Make second metal level and be doped with the amorphous silicon layer patterning of impurity by mask process, thereby to form and grid line 106 intersects the data wire 130 that defines pixel region P.Simultaneously, in switch region TrA, form ohmic contact pattern 127, source electrode 133 and drain 136.An ohmic contact pattern 127 passes through the active layer 115 of a contact hole 125 contact exposures of interlayer insulating film 122, and source electrode 133 is stacked on this ohmic contact pattern 127.The active layer 115 that another ohmic contact pattern 127 another contact hole 125 contacts by interlayer insulating film 122 expose, and drain and 136 be stacked on this another ohmic contact pattern 127.That is, ohmic contact pattern 127 and source electrode 133 are separated with another ohmic contact pattern 127 and drain electrode 136 respectively.Owing to make an ohmic contact pattern 127 and source electrode 133 patternings by the single mask operation, thus they have can be each other the overlapping area of plane that is essentially the same as each other and flat shape fully.Similar with it, another ohmic contact pattern 127 has the area of plane and identical flat shape that is essentially the same as each other with drain electrode 136.Source electrode 133 links to each other with data wire 130.In addition, and ohmic contact layer 127 be positioned at the layer first dummy pattern (dummy pattern) 128 be between interlayer insulating film 122 and the data wire 130.
When forming the barrier layer, the barrier pattern (not shown) is arranged under the ohmic contact pattern 127, and contacts with active layer 115 by the contact hole 125 of interlayer insulating film 122.In addition, and barrier pattern with the layer second dummy pattern 126 be arranged between first dummy pattern 128 and the interlayer insulating film 122.
In the present invention, owing to stop the part interlayer insulating film 122 of thing to cover the middle part of active layer 115, therefore there is not damage for active layer 115 in the dry etching operation process that is used for ohmic contact pattern 127 as etching.Promptly; be used for the dry etching operation process of ohmic contact pattern 127; because interlayer insulating film 122 has covered the middle part of active layer 115,, make the thickness of active layer 115 not reduce because of the dry etching operation so interlayer insulating film 122 has been protected active layer 115.Therefore, active layer 115 has homogeneous thickness.
With second metal layer patternization with after forming source electrode 133 and drain electrode 136, carry out the dry etching operation, be doped with the expose portion of the amorphous silicon layer of impurity with etching.In the case, because between source electrode 133 and drain electrode 136, have the interlayer insulating film 122 that stops thing as etching, there is not damage for active layer 115.Therefore, active layer 115 has homogeneous thickness in whole switch region TrA.
The active layer 115 of grid, gate insulation layer 109, intrinsic polysilicon, interlayer insulating film 122, be doped with impurity amorphous silicon ohmic contact pattern 127 and source electrode 133 and drain and 136 constituted TFT Tr.
Though not shown, when this array base palte is used for the OELD device, need to form the power line parallel with layer place with data wire 130 with data wire 130.In addition, also need form have with as the identical in fact structure of the above-mentioned TFT Tr of switching TFT and be connected in the drive TFT of above-mentioned TFT Tr and power line.
Next, shown in Fig. 4 J, by deposition inorganic insulation layer material such as silicon dioxide or silicon nitride, at data wire 130, source electrode 133 with drain and form passivation layer 140 on 136.Make passivation layer 140 patternings by mask process, to form the drain contact hole 143 that exposes drain electrode 136.
Next, shown in Fig. 4 K,, on the passivation layer 140 that comprises drain contact hole 143, form the transparent conductive material layer (not shown) by deposit transparent electric conducting material such as tin indium oxide (ITO) or indium zinc oxide (IZO).By mask process with the transparent conductive material layer patterning, to form by drain contact hole 143 contact drain electrodes 136 and to be arranged in the pixel electrode 150 of each pixel region P.
On the other hand, when forming drive TFT so that array base palte is used for the OELD device, pixel electrode 150 does not contact the drain electrode 136 as the TFT Tr of switching TFT.Pixel electrode 150 is by the drain electrode of the contact holes contact drive TFT of the drain electrode of exposure drive TFT, and passivation layer 140 does not expose the drain electrode 136 of TFT Tr.Switching TFT and drive TFT are connected with each other.
It is obvious to the skilled person that can modifications and variations of the present invention are, and do not break away from main idea of the present invention and scope.Therefore, the invention is intended to contain, as long as these modifications and variations are within the scope of claims and equivalent thereof to modifications and variations of the present invention.

Claims (12)

1. the method for a manufacturing array substrate, described method comprises:
Form the first metal layer, first inorganic insulation layer and intrinsic amorphous silicon layer successively on the substrate of the switch region in defining pixel region and described pixel region, described the first metal layer comprises first metal material layer and covers second metal material layer of the upper surface of described first metal material layer, wherein, described first metal material layer has resistance and the fusing point that is lower than described second metal material layer;
With described intrinsic amorphous silicon crystallization is the intrinsic polysilicon layer;
By making described intrinsic polysilicon layer, described first inorganic insulation layer and described the first metal layer patterning form grid, being connected in grid line, gate insulation layer and the active layer of described grid, described grid, described gate insulation layer and described active layer are arranged in described switch region;
Form the interlayer insulating film that comprises first and second contact holes on described active layer, described first and second contact holes expose the both sides of described active layer respectively;
Form respectively by described first and second contact holes contact the first and second ohmic contact patterns of the both sides of described active layer, in the source electrode on the described first ohmic contact pattern, drain electrode and the data wire that is connected described source electrode on the described second ohmic contact pattern, described data wire intersects to define described pixel region with described grid line;
Form passivation layer on described source electrode, described drain electrode and described data wire, described passivation layer comprises the drain contact hole that exposes described drain electrode; With
On described passivation layer, form the pixel electrode that contacts described drain electrode by described drain contact hole.
2. the method for claim 1, wherein described the first metal layer also is included in the 3rd metal material layer of described first metal material layer below, and described first metal material layer has resistance and the fusing point that is lower than described the 3rd metal material layer.
3. method as claimed in claim 2, wherein, described crystallization is undertaken by the solid-phase crystallization operation, and described solid-phase crystallization operation is a kind of in thermal crystalline operation or the alternating magnetic field Crystallization Procedure.
4. method as claimed in claim 2, wherein, described active layer has the thickness of about 400 dusts～600 dusts.
5. method as claimed in claim 2, wherein, the described second and the 3rd metal material layer is by a kind of formation in titanium, molybdenum and the titanium-molybdenum alloy, and described first metal material layer is by a kind of formation the in aluminium, aluminium alloy, the copper and copper alloy.
6. the described step that the method for claim 1, wherein forms described grid, described grid line, described gate insulation layer and described active layer comprises:
On described intrinsic polysilicon layer, form the first and second photoresist patterns, the described first photoresist pattern has first thickness and corresponding to described active layer, the described second photoresist pattern has less than second thickness of described first thickness and corresponding to described grid line;
By described first inorganic insulation layer and the described the first metal layer of etching via the described first and second photoresist patterns described intrinsic polysilicon layer that exposes and the described intrinsic polysilicon layer below that is positioned at exposure, formation is stacked in described grid, inorganic insulation pattern and the intrinsic polysilicon pattern in the described switch region, and described grid line;
The described second photoresist pattern of ashing is to expose a side of described intrinsic polysilicon pattern;
By the described intrinsic polysilicon pattern of etch exposed and the described inorganic insulation pattern of the described intrinsic polysilicon pattern below that is positioned at exposure, forming described gate insulation layer on the described grid and on described gate insulation layer, forming described active layer; With
Remove the described first photoresist pattern.
7. the described step that the method for claim 1, wherein forms described grid, described grid line, described gate insulation layer and described active layer comprises:
On described intrinsic polysilicon layer, form the first and second photoresist patterns, the described first photoresist pattern has first thickness and corresponding to described active layer, the described second photoresist pattern has less than second thickness of described first thickness and corresponding to described grid line;
By described first inorganic insulation layer and the described the first metal layer of etching via the described first and second photoresist patterns described intrinsic polysilicon layer that exposes and the described intrinsic polysilicon layer below that is positioned at exposure, formation is stacked in the described grid in the described switch region, described gate insulation layer and intrinsic polysilicon pattern, and described grid line;
The described second photoresist pattern of ashing is to expose a side of described intrinsic polysilicon pattern;
By the described intrinsic polysilicon pattern of etch exposed,, make described gate insulation layer cover described grid line forming described gate insulation layer on the described grid and on described gate insulation layer, forming described active layer; With
Remove the described first photoresist pattern.
8. the method for claim 1, wherein described crystallization is undertaken by the solid-phase crystallization operation, and described solid-phase crystallization operation is a kind of in thermal crystalline operation or the alternating magnetic field Crystallization Procedure.
9. the described step that the method for claim 1, wherein forms the described first and second ohmic contact patterns, described source electrode and drain electrode and described data wire comprises:
On described interlayer insulating film, form the amorphous silicon layer and second metal level that is doped with impurity successively; With
Make described amorphous silicon layer and described second metal layer patternization that is doped with impurity successively, to form the described first and second ohmic contact patterns, described source electrode and drain electrode and described data wire.
10. method as claimed in claim 9, wherein, the described first and second ohmic contact patterns have the area of plane and the shape identical in fact with drain electrode with described source electrode respectively.
11. the method for claim 1, wherein described active layer has the thickness of about 400 dusts～600 dusts.
12. the method for claim 1, wherein described second and the 3rd metal material layer is by a kind of formation in titanium, molybdenum and the titanium-molybdenum alloy, and described first metal material layer is by a kind of formation the in aluminium, aluminium alloy, the copper and copper alloy.
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