CN101885060B - High-performance copper-diamond electrical contact material and preparation process thereof - Google Patents
High-performance copper-diamond electrical contact material and preparation process thereof Download PDFInfo
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Abstract
The invention relates to a preparation process of powder metallurgy material, in particular to a preparation process of a high-performance copper-diamond electrical contact material. The preparation process of the high-performance copper-diamond electrical contact material comprises the following steps: (1) preparing the raw materials: preparing the copper alloy powder by using a high-pressure spray method, preparing the copper-coated diamond powder by using a liquid-phase reduction method and mixing the copper alloy powder and the copper-coated diamond powder; (2) preparing the electrical contact material: firstly, carrying out thermal diffusion treatment to the mixture of the copper alloy powder and the copper-coated diamond powder, sintering the compressed and moulded mixture in vacuum, and thermally extruding and moulding the mixture; and (3) preparing electrical contact sectional material: rolling or drawing and machining the copper-diamond electric contact into the required-size sectional material.
Description
Technical field
The present invention relates to the powdered metallurgical material manufacturing process, relate in particular to high-performance copper-copper-diamond electrical contact material manufacturing process.
Background technology
Electrical contact is the contact element of electric switch, instrument etc.; Mainly bear the effect of connection, disconnecting circuit and load current; The quality of its performance directly influences electric switch and instrument reliability of operation and service life.At present, electrical contact material is main with money base; But Ag-based electrical contact involves great expense, and production cost is high.For this reason, people select conduction and heat conductivility strong, and cheap copper replaces silver, as the material of electrical contact.
Chinese patent (CN1787137A) discloses the silver-colored copper-diamond electrical contact material of a kind of trace additives.This patent is in the copper matrix, to add trace meter silver, bortz powder and other a kind of elements (zirconium, chromium, aluminium, niobium and rare earth); Thereby the resistance fusion welding of copper-based electrical contact material, anti-electrical arc erosion ability and electric life have been strengthened.This electrical contact material is to adopt traditional powder metallurgic method preparation, promptly earlier with the powder mixing machine method copper powder, silver powder and bortz powder is carried out batch mixing, then successively through isotactic pressing, vacuum-sintering, extrusion modling, rolling or drawing, and last machining moulding.
But there is following problem in this technical scheme: at first, the component segregation phenomenon takes place easily, promptly in the copper alloy behind sintering, elements such as the rare earth that is added, chromium, zirconium or niobium also possibly exist with the simple substance state.This is because elements such as rare earth, chromium, zirconium or niobium are difficult to and the complete alloying of copper on the one hand; On the other hand, what this patent adopted is mechanical mixture technology, its mixed metal powder granulates, skewness in copper alloy.The component segregation phenomenon can cause the hardness of copper alloy matrix to reduce, and the ability of solidified diamond weakens; And then influence the resistance fusion welding and the anti-electrical arc erosion power of electric contact.In addition, the resistivity of electrical contact also can be affected, so the comprehensive electrochemical properties of the electrical contact material of this technical scheme is not high.
Secondly, this technology directly joins undressed diamond dust in the copper alloy powder.Affixed ability between these two kinds of materials of different nature; The long-term wearability and the resistance fusion welding of back electrical contact material of using can reduce greatly.
Summary of the invention
The objective of the invention is: a kind of manufacturing process of high-performance copper-copper-diamond electrical contact material is provided, can makes the structural constituent of copper alloy matrix even, produce metallurgical binding closely with diamond; Electrical contact material hardness with this fabrication process is high, resistivity is little, resistance fusion welding can be strong.
The objective of the invention is to realize like this,, adopt the high-pressure water mist method,, be atomized into average grain diameter and be-200 orders to-300 purpose fine powders the molten alloyed copper of fusing in order to make the copper alloy matrix even tissue.The present invention has researched and developed the technology that liquid phase reduction is produced the copper clad diamond dust, comprises diamond dust surface graphitization, diamond dust acid treatment, reduction coats and preparation technologies such as vacuum drying.Coat layer of copper on the diamond dust surface, form solid solution, make diamond and copper alloy matrix reach strong bonded through copper and copper alloy.In copper alloy powder, added the composition of specific two kinds of elements, the alloy that it mutually combines and produces can improve diamond and copper alloy matrix wetting of surfaces property; And the element of said composition can react with the carbon of diamond surface, forms clearance-type carbide intermediate layer, and this clearance-type carbide is to be combined by covalent bond, ionic bond, metallic bond, can impel between diamond and the copper alloy to produce metallurgical binding.Simultaneously, this clearance-type carbide has special nature, can increase the electric conductivity of copper-diamond electrical contact material.Thermal diffusion process of the present invention can prevent that diamond from being graphite by whole oxidation transformations, can also make to produce the surface metallurgic combination between each powder, makes chemical constituent even; And can improve the suppression performance of powder.Among the preparation technology of the present invention, adopt nitrogen protection or vacuum environment more, oxidized to avoid rare earth element.
The manufacturing process of high-performance copper-copper-diamond electrical contact material, carry out according to following steps:
1) preparation raw material: be equipped with copper alloy powder with the high-pressure water mist legal system, produce the copper clad diamond dust with liquid phase reduction; Then, copper alloy powder and copper clad diamond dust are mixed;
2) preparation electrical contact material: earlier copper alloy and copper clad diamond mixed-powder are carried out heat diffusion treatment; After the compression moulding, carry out vacuum-sintering again, adopt hot extrusion at last, copper-diamond electrical contact material billet is squeezed into section bar;
3) preparation electrical contact section bar:, copper-diamond electrical contact hot extruded shapes is processed into the required size section bar through rolling or drawing and machining.
In the preparation raw material stage; During mixing used diamond dust account for mixture weight percentage 0.001～5.0%, copper alloy powder accounts for 95～99.999% of mixture weight percentage; Wherein said diamond dust particle diameter is 0.1～15 μ m, and its surface is coated with copper.The raw material of said copper alloy powder by weight percentage, comprises silver 0.001～2.0%, active element 0.002～4.0%, copper surplus; Said active element is any one in the composition of composition or rare earth element and zirconium of NiTi composition, nickel zirconium composition, chromium niobium composition, chromium titanium composition, rare earth element and silicon; Nickel accounts for 0.001～2.0% of total raw material percentage by weight in the said NiTi constituent, and titanium accounts for 0.001～2.0% of total raw material percentage by weight; Nickel accounts for 0.001～2.0% of total raw material percentage by weight in the described nickel zirconium composition, and zirconium accounts for 0.001～2.0% of total raw material percentage by weight; Chromium accounts for 0.001～2.0% of total raw material percentage by weight in the described chromium niobium composition, and niobium accounts for 0.001～2.0% of total raw material percentage by weight; Chromium accounts for 0.001～2.0% of total raw material percentage by weight in the described chromium titanium composition, and titanium accounts for 0.001～2.0% of total raw material percentage by weight; In the composition of said rare earth element and silicon, rare earth element accounts for 0.001～2.0% of total raw material percentage by weight, and silicon accounts for 0.001～2.0% of total raw material percentage by weight; In the composition of said rare earth element and zirconium, rare earth element accounts for 0.001～2.0% of total raw material percentage by weight, and zirconium accounts for 0.001～2.0% of total raw material percentage by weight; Said rare earth element is any one in lanthanum, cerium or the yttrium.
Said hydraulic atomized legal system is equipped with copper alloy powder, is under the nitrogen protection condition, the copper alloy raw material is placed in the intermediate frequency furnace melt, and temperature is controlled at 1100～1200 ℃; Molten alloyed copper after the fusing through the high-pressure water mist nozzle, is atomized into copper alloy powder; Atomizing pressure is 50～100MPa, condensation rate 103～104k/s.
Said liquid phase reduction is produced the copper clad diamond dust, carries out according to following steps,
(1) powder-processed: with sintering furnace graphitization processing is carried out on the diamond dust surface earlier, with diluted hydrofluoric acid diamond dust is carried out acid treatment then;
(2) coat copper: adopt reducing process copper on diamond surface coats;
(3) finished product is handled: the diamond dust of copper clad is filtered, washs, and vacuum drying sieves.
Said diamond dust surface graphitization processing is under the nitrogen protection condition, bortz powder is put in 900～1000 ℃ the tube furnace and heat-treats insulation 30～60min.
Said diamond dust acid treatment is with heat treated diamond dust, puts into the dilute hydrofluoric acid solution of 2～6N, stirs 10～20 minutes; Use flushing with clean water again,, and filter to neutral.
Said reducing process coats copper, is the ammonia solvent copper sulphate with 30%, makes it to form cupric ammine complex solution, and the concentration of copper ion is 60～80g/L in this solution; Use ammoniacal liquor again, the pH value of cupric ammine complex solution is adjusted to 8.5～11, and makes solution temperature remain on 20 ℃～40 ℃; Then, the bortz powder of acid treatment is put into cupric ammine complex solution, constantly stir; And to drip concentration be 40% hydrazine hydrate, reduces coating.
Said heat diffusion treatment is put into tube furnace with the powder that mixes, and under the condition of nitrogen protection, carries out heat diffusion treatment, makes and produces metallurgical binding formation solid solution between copper clad diamond dust and the copper alloy; The thermal diffusion temperature is 400～800 ℃, and temperature retention time is 2～6 hours.
Said compression moulding, the pressing pressure of isostatic pressing machine is at 50～300MPa, 3～5 seconds dwell times; Said vacuum-sintering is that copper-diamond electrical contact billet is put into sintering furnace, and its vacuum is less than 5 * 10
-3Pa, 750～950 ℃ of sintering temperatures, temperature retention time 1～2 hour; Said hot extrusion, the pressure of extruder are 15～25MPa, and the hot extrusion ratio is 10～25,600～850 ℃ of extrusion temperatures.
The invention has the beneficial effects as follows:
1, the present invention adopts the prepared copper clad diamond dust of liquid phase reduction, has good dispersive property, and it is evenly distributed in copper alloy matrix; And strengthened the associativity of diamond dust and copper alloy powder greatly, guaranteed the abrasion resistance of electrical contact, prolonged the service life of electrical contact;
2, the present invention has added any one in the composition of NiTi composition or nickel zirconium composition or chromium niobium composition or chromium titanium composition or rare earth element and silicon or zirconium in copper alloy powder; Improved the wetability between diamond and the copper alloy; And make between diamond and the copper alloy powder and produce metallurgical binding, improved electrical contact resistance fusion welding can, abrasion resistance and electric property;
3, the present invention adopts the high-pressure water mist method, and copper alloy powder further is atomized into ultra-fine alloyed powder.The alloy powder of gained, chemical constituent is even, has avoided the alloying component segregation, and has further strengthened the bond strength of diamond and copper alloy;
4, the present invention adopts thermal diffusion process; On the one hand, can prevent that the diamond oxidation transformation from being graphite; On the other hand, can make between copper clad diamond dust and the copper alloy powder, produce surface metallurgic and combine, strengthen alloying; And promote the alloy structure homogenising, improved alloy powder particle and formed and suppression performance.
Description of drawings
Accompanying drawing manufacturing process flow diagram of the present invention
Specific embodiment
Embodiment 1
The compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, for bortz powder (it is heavy to remove coating copper) is 0.05%, copper alloy powder 99.95%.
Wherein the prescription of copper alloy powder does, silver 0.01 (mas) %, nickel 0.02 (mas) %, zirconium 0.02 (mas) %, copper 99.95 (mas) %.
The manufacturing process of electrical contact material as shown in Figure 1:
1) hydraulic atomized legal system is got copper alloy powder: by above-mentioned copper alloy powder powder formulation, take by weighing silver, nickel, zirconium and copper raw metal, place fusing in the intermediate frequency furnace; Fusion process adopts nitrogen protection, and temperature is controlled at 1100～1200 ℃.Then, the molten alloyed copper high-pressure water mist nozzle of flowing through is atomized into even-grained powder, and powder diameter is-200 orders; Atomizing pressure is 60MPa, condensation rate 104k/s.Because the copper alloy powder particle diameter that hydraulic atomized method is produced is tiny, and is evenly distributed, and can prevent the generation of component segregation phenomenon.
2) on diamond dust, coat copper; At first, take by weighing diamond dust by above-mentioned prescription; Be placed in the tube furnace and heat-treat.Feed nitrogen in the stove, temperature is 950 ℃, and insulation 50min makes the particle surface of diamond dust be transformed into graphite, forms the carbon shell of the very thin sealing of one deck.This step is in the heat diffusion treatment, and the generation of clearance-type carbide provides condition.
Then, diamond dust is carried out acid treatment.With heat treated diamond dust, put into the dilute hydrofluoric acid solution of 4N, stirred 15 minutes; Use the flushing with clean water diamond dust, be neutral until pH value, and filter.
Then, coat copper with reducing process at diamond surface.Earlier with 30% ammonia solvent copper sulphate, make it to form cupric ammine complex solution, the concentration of copper ion is 75g/L in the solution; Use ammoniacal liquor again, the pH value of cupric ammine complex solution is adjusted to 9.5, need the temperature of solution is remained on 30 ℃ always; Then, will put into cupric ammine complex solution, and constantly stir, and to drip concentration be 40% hydrazine hydrate, reduce coating through the bortz powder of acid treatment; At last, the filtration of copper clad diamond dust, washing and vacuum drying are sieved.
3) batch mixing: with copper alloy powder and cladding diamond powder, after mixing by hand, place mixed powder machine evenly to mix, mixing the powder time is 2 hours.
4) heat diffusion treatment: with the powder that mixes, put into tube furnace, feed nitrogen, carry out heat diffusion treatment, make and produce metallurgical binding formation solid solution between diamond and the copper alloy powder; The thermal diffusion temperature is 600 ℃, and temperature retention time is 4 hours.
5) compression moulding: use isostatic pressing machine, the copper-diamond powder with forming after the thermal diffusion is pressed into billet, and pressure is 150MPa.
6) vacuum-sintering: the copper-diamond billet is put into sintering furnace, and its vacuum is less than 5 * 10-3Pa, 800 ℃ of sintering temperatures, temperature retention time 2 hours;
7) hot extrusion is become a useful person: be to increase the density of copper-diamond alloy, with the copper-diamond alloy billet hot extrusion molding material of extruder after with vacuum-sintering, squeeze pressure is 20MPa, and the hot extrusion ratio is 20, and extrusion temperature is 800 ℃.
8) rolling or drawing: the copper-diamond alloy profile is rolled or is drawn into required profile size with milling train or wire drawing machine.
9) machining:, the copper-diamond section bar is carried out machining by the size of required electrical contact.
Embodiment 2
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 0.5%, copper alloy powder 99.5%.
Wherein the prescription of copper alloy powder does, silver 0.1 (mas) %, nickel 0.1 (mas) %, zirconium 0.1 (mas) %, copper 99.7%.
Embodiment 3
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 2%, copper alloy powder 98%.
Wherein the prescription of copper alloy powder does, silver 1.0 (mas) %, nickel 1.0 (mas) %, zirconium 1.0 (mas) %, copper 97%.
Embodiment 4
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 0.05%, copper alloy powder 99.95%.
Wherein the prescription of copper alloy powder does, silver 0.01 (mas) %, nickel 0.02 (mas) %, titanium 0.02 (mas) %, copper 99.95%.
Embodiment 5
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 0.5%, copper alloy powder 99.5%.
Wherein the prescription of copper alloy powder does, silver 0.1 (mas) %, nickel 0.1 (mas) %, titanium 0.1 (mas) %, copper 99.7%.
Embodiment 6
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 2%, copper alloy powder 98%.
Wherein the prescription of copper alloy powder does, silver 1.0 (mas) %, nickel 1.0 (mas) %, titanium 1.0 (mas) %, copper 97%.
Embodiment 7
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 0.05%, copper alloy powder 99.95%.
Wherein the prescription of copper alloy powder does, silver 0.01 (mas) %, chromium 0.01 (mas) %, niobium 0.01 (mas) %, copper 99.97%.
Embodiment 8
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 0.5%, copper alloy powder 99.5%.
Wherein the prescription of copper alloy powder does, silver 0.1 (mas) %, chromium 0.1 (mas) %, niobium 0.1 (mas) %, copper 99.7%.
Embodiment 9
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 2%, copper alloy powder 98%.
Wherein the prescription of copper alloy powder does, silver 1.0 (mas) %, chromium 1.0 (mas) %, niobium 1.0 (mas) %, copper 97%.
Embodiment 10
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 0.05%, copper alloy powder 99.95%.
Wherein the prescription of copper alloy powder does, silver 0.01 (mas) %, chromium 0.01 (mas) %, titanium 0.01 (mas) %, copper 99.97%.
Embodiment 11
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 0.5%, copper alloy powder 99.5%.
Wherein the prescription of copper alloy powder does, silver 0.1 (mas) %, chromium 0.1 (mas) %, titanium 0.1 (mas) %, copper 99.7%.
Embodiment 12
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 2%, copper alloy powder 98%.
Wherein the prescription of copper alloy powder does, silver 1.0 (mas) %, chromium 1.0 (mas) %, titanium 1.0 (mas) %, copper 97%.
Embodiment 13
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 0.05%, copper alloy powder 99.95%.
Wherein the prescription of copper alloy powder does, silver 0.01 (mas) %, cerium 0.01 (mas) %, silicon 0.01 (mas) %, copper 99.97%.
Embodiment 14
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 0.5%, copper alloy powder 99.5%.
Wherein the prescription of copper alloy powder does, silver 0.1 (mas) %, cerium 0.1 (mas) %, silicon 0.1 (mas) %, copper 99.7%.
Embodiment 15
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 2%, copper alloy powder 98%.
Wherein the prescription of copper alloy powder does, silver 1.0 (mas) %, cerium 1.0 (mas) %, silicon 1.0 (mas) %, copper 97%.
Embodiment 16
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 0.05%, copper alloy powder 99.95%.
Wherein the prescription of copper alloy powder does, silver 0.01 (mas) %, yttrium 0.01 (mas) %, silicon 0.01 (mas) %, copper 99.97%.
Embodiment 17
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 0.5%, copper alloy powder 99.5%.
Wherein the prescription of copper alloy powder does, silver 0.1 (mas) %, yttrium 0.1 (mas) %, silicon 0.1 (mas) %, copper 99.7%.
Embodiment 18
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 2%, copper alloy powder 98%.
Wherein the prescription of copper alloy powder does, silver 1.0 (mas) %, yttrium 1.0 (mas) %, silicon 1.0 (mas) %, copper 97%.
Embodiment 19
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 0.05%, copper alloy powder 99.95%.
Wherein the prescription of copper alloy powder does, silver 0.01 (mas) %, lanthanum 0.01 (mas) %, silicon 0.01 (mas) %, copper 99.97%.
Embodiment 20
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 0.5%, copper alloy powder 99.5%.
Wherein the prescription of copper alloy powder does, silver 0.1 (mas) %, lanthanum 0.1 (mas) %, silicon 0.1 (mas) %, copper 99.7%.
Embodiment 21
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 2%, copper alloy powder 98%.
Wherein the prescription of copper alloy powder does, silver 1.0 (mas) %, lanthanum 1.0 (mas) %, silicon 1.0 (mas) %, copper 97%.
Embodiment 22
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 0.05%, copper alloy powder 99.95%.
Wherein the prescription of copper alloy powder does, silver 0.01 (mas) %, cerium 0.01 (mas) %, zirconium 0.01 (mas) %, copper 99.97%.
Embodiment 23
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 0.5%, copper alloy powder 99.5%.
Wherein the prescription of copper alloy powder does, silver 0.1 (mas) %, cerium 0.1 (mas) %, zirconium 0.1 (mas) %, copper 99.7%.
Embodiment 24
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 2%, copper alloy powder 98%.
Wherein the prescription of copper alloy powder does, silver 1.0 (mas) %, cerium 1.0 (mas) %, zirconium 1.0 (mas) %, copper 97%.
Embodiment 25
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 0.05%, copper alloy powder 99.95%.
Wherein the prescription of copper alloy powder does, silver 0.01 (mas) %, yttrium 0.01 (mas) %, zirconium 0.01 (mas) %, copper 99.97%.
Embodiment 26
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 0.5%, copper alloy powder 99.5%.
Wherein the prescription of copper alloy powder does, silver 0.1 (mas) %, yttrium 0.1 (mas) %, zirconium 0.1 (mas) %, copper 99.7%.
Embodiment 27
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 2%, copper alloy powder 98%.
Wherein the prescription of copper alloy powder does, silver 1.0 (mas) %, yttrium 1.0 (mas) %, zirconium 1.0 (mas) %, copper 97%.
Embodiment 28
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 0.05%, copper alloy powder 99.95%.
Wherein the prescription of copper alloy powder does, silver 0.01 (mas) %, lanthanum 0.02 (mas) %, zirconium 0.02 (mas) %, copper 99.97%.
Embodiment 29
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 0.5%, copper alloy powder 99.5%.
Wherein the prescription of copper alloy powder does, silver 0.1 (mas) %, lanthanum 0.1 (mas) %, zirconium 0.1 (mas) %, copper 99.7%.
Embodiment 30
Manufacturing process is with embodiment 1, the compositing formula of high-performance copper-diamond contact material of the present invention, by weight percentage, and for bortz powder (remove coat copper heavy) is 2%, copper alloy powder 98%.
Wherein the prescription of copper alloy powder does, silver 1.0 (mas) %, lanthanum 1.0 (mas) %, zirconium 1.0 (mas) %, copper 97%.
Comparative Examples 1
The copper alloy powder powder formulation is with embodiment 1, and the diamond that is added is without the processing that coats copper.
Comparative Examples 2
The copper alloy powder powder formulation is with embodiment 2, and the diamond that is added is without the processing that coats copper.
Comparative Examples 3
The copper alloy powder powder formulation is with embodiment 3, and the diamond that is added is without the processing that coats copper.
Comparative Examples 4
The copper alloy powder powder formulation is with embodiment 4, and the diamond that is added is without the processing that coats copper.
Comparative Examples 5
The copper alloy powder powder formulation is with embodiment 5, and the diamond that is added is without the processing that coats copper.
Comparative Examples 6
The copper alloy powder powder formulation is with embodiment 6, and the diamond that is added is without the processing that coats copper.
Comparative Examples 7
The copper alloy powder powder formulation is with embodiment 7, and the diamond that is added is without the processing that coats copper.
Comparative Examples 8
The copper alloy powder powder formulation is with embodiment 8, and the diamond that is added is without the processing that coats copper.
Comparative Examples 9
The copper alloy powder powder formulation is with embodiment 9, and the diamond that is added is without the processing that coats copper.
Comparative Examples 10
The copper alloy powder powder formulation is with embodiment 10, and the diamond that is added is without the processing that coats copper.
Comparative Examples 11
The copper alloy powder powder formulation is with embodiment 11, and the diamond that is added is without the processing that coats copper.
Comparative Examples 12
The copper alloy powder powder formulation is with embodiment 12, and the diamond that is added is without the processing that coats copper.
Comparative Examples 13
The copper alloy powder powder formulation is with embodiment 13, and the diamond that is added is without the processing that coats copper.
Comparative Examples 14
The copper alloy powder powder formulation is with embodiment 14, and the diamond that is added is without the processing that coats copper.
Comparative Examples 15
The copper alloy powder powder formulation is with embodiment 15, and the diamond that is added is without the processing that coats copper.
Comparative Examples 16
The copper alloy powder powder formulation is with embodiment 16, and the diamond that is added is without the processing that coats copper.
Comparative Examples 17
The copper alloy powder powder formulation is with embodiment 17, and the diamond that is added is without the processing that coats copper.
Comparative Examples 18
The copper alloy powder powder formulation is with embodiment 18, and the diamond that is added is without the processing that coats copper.
Comparative Examples 19
The copper alloy powder powder formulation is with embodiment 19, and the diamond that is added is without the processing that coats copper.
Comparative Examples 20
The copper alloy powder powder formulation is with embodiment 20, and the diamond that is added is without the processing that coats copper.
Comparative Examples 21
The copper alloy powder powder formulation is with embodiment 21, and the diamond that is added is without the processing that coats copper.
Comparative Examples 22
The copper alloy powder powder formulation is with embodiment 22, and the diamond that is added is without the processing that coats copper.
Comparative Examples 23
The copper alloy powder powder formulation is with embodiment 23, and the diamond that is added is without the processing that coats copper.
Comparative Examples 24
The copper alloy powder powder formulation is with embodiment 24, and the diamond that is added is without the processing that coats copper.
Comparative Examples 22
The copper alloy powder powder formulation is with embodiment 22, and the diamond that is added is without the processing that coats copper.
Comparative Examples 23
The copper alloy powder powder formulation is with embodiment 23, and the diamond that is added is without the processing that coats copper.
Comparative Examples 24
The copper alloy powder powder formulation is with embodiment 24, and the diamond that is added is without the processing that coats copper.Comparative Examples 25
The copper alloy powder powder formulation is with embodiment 25, and the diamond that is added is without the processing that coats copper.
Comparative Examples 26
The copper alloy powder powder formulation is with embodiment 26, and the diamond that is added is without the processing that coats copper.
Comparative Examples 27
The copper alloy powder powder formulation is with embodiment 27, and the diamond that is added is without the processing that coats copper.
Comparative Examples 28
The copper alloy powder powder formulation is with embodiment 28, and the diamond that is added is without the processing that coats copper.
Comparative Examples 29
The copper alloy powder powder formulation is with embodiment 29, and the diamond that is added is without the processing that coats copper.
Comparative Examples 30
The copper alloy powder powder formulation is with embodiment 30, and the diamond that is added is without the processing that coats copper.
The performance of the foregoing description 1-30 and Comparative Examples 1-30 is relatively like following table:
Can find out that from table the density and hardness of embodiments of the invention is all high than Comparative Examples, and the resistivity of the embodiment of the invention is all less than Comparative Examples.
Comparative Examples 31
The compositing formula of electrical contact material, by weight percentage, for bortz powder (it is heavy to remove coating copper) is 0.05%, copper alloy powder 99.95%.This proportioning is with the embodiment of the invention 1,4,7,10,13,16,19,22,25 and 28.Said diamond dust surface is coated with copper.
Wherein the prescription of copper alloy powder does, silver 0.01 (mas) %, copper 99.99 (mas) %.
Comparative Examples 31 compares like following table with the performance of embodiment 1,4,7,10,13,16,19,22,25 and 28:
Visible by last table, embodiments of the invention all are higher than Comparative Examples 31 at density and hardness, and the resistivity of the embodiment of the invention is all less than Comparative Examples 31.
Comparative Examples 32
The compositing formula of electrical contact material, by weight percentage, for bortz powder (it is heavy to remove coating copper) is 0.5%, copper alloy powder 99.5%.This proportioning is with the embodiment of the invention 2,5,8,11,14,17,20,23,26 and 29.Said diamond dust surface is coated with copper.
Wherein the prescription of copper alloy powder does, silver 0.1 (mas) %, copper 99.9 (mas) %.
Comparative Examples 32 compares like following table with the performance of embodiment 2,5,8,11,14,17,20,23,26 and 29:
Visible by last table, embodiments of the invention all are higher than Comparative Examples 32 at density and hardness, and the resistivity of the embodiment of the invention is all less than Comparative Examples 32.
Comparative Examples 33
The compositing formula of electrical contact material, by weight percentage, for bortz powder (it is heavy to remove coating copper) is 2.0%, copper alloy powder 98%.This proportioning is with the embodiment of the invention 3,6,9,12,15,18,21,24,27 and 30.Said diamond dust surface is coated with copper.
Wherein the prescription of copper alloy powder does, silver 1 (mas) %, copper 99 (mas) %.
Comparative Examples 31 compares like following table with the performance of embodiment 3,6,9,12,15,18,21,24,27 and 30:
Visible by last table, embodiments of the invention all are higher than Comparative Examples 32 at density and hardness, and the resistivity of the embodiment of the invention is all less than Comparative Examples 33.
Claims (6)
1. the manufacturing process of high-performance copper-copper-diamond electrical contact material, carry out according to following steps:
(1) preparation raw material: be equipped with copper alloy powder with hydraulic atomized legal system, produce copper clad Buddha's warrior attendant powder, then, copper alloy powder and copper clad diamond dust are mixed with liquid phase reduction; During mixing used diamond dust account for mixture weight percentage 0.001～5.0%, copper alloy powder accounts for 95～99.999% of mixture weight percentage, wherein said diamond dust particle diameter is 0.1～15 μ m, its surface is coated with copper; The raw material of said copper alloy powder by weight percentage, comprises silver 0.001～2.0%, active element 0.002～4.0%, copper surplus; Said active element is any one in the composition of composition or rare earth element and zirconium of NiTi composition, nickel zirconium composition, chromium niobium composition, chromium titanium composition, rare earth element and silicon; Nickel accounts for 0.001～2.0% of total raw material percentage by weight in the said NiTi constituent, and titanium accounts for 0.001～2.0% of total raw material percentage by weight; Nickel accounts for 0.001～2.0% of total raw material percentage by weight in the said nickel zirconium composition, and zirconium accounts for 0.001～2.0% of total raw material percentage by weight; Chromium accounts for 0.001～2.0% of total raw material percentage by weight in the described chromium niobium composition, and niobium accounts for 0.001～2.0% of total raw material percentage by weight; Chromium accounts for 0.001～2.0% of total raw material percentage by weight in the described chromium titanium composition, and titanium accounts for 0.001～2.0% of total raw material percentage by weight; In the composition of said rare earth element and silicon, rare earth element accounts for 0.001～2.0% of total raw material percentage by weight, and silicon accounts for 0.001～2.0% of total raw material percentage by weight; In the composition of said rare earth element and zirconium, rare earth element accounts for 0.001～2.0% of total raw material percentage by weight, and zirconium accounts for 0.001～2.0% of total raw material percentage by weight; Said rare earth element is any one in lanthanum, cerium or the yttrium;
(2) preparation electrical contact material: earlier copper alloy and copper clad diamond mixed-powder are carried out heat diffusion treatment; After the compression moulding, carry out vacuum-sintering again, adopt hot extrusion at last; Copper-diamond electrical contact material billet is squeezed into section bar, and said heat diffusion treatment is put into tube furnace with the powder that mixes; Under the condition of nitrogen protection, carry out heat diffusion treatment, make and produce metallurgical binding formation solid solution between copper clad diamond dust and the copper alloy; The thermal diffusion temperature is 400～800 ℃, and temperature retention time is 2～6 hours;
(3) preparation electrical contact section bar:, copper-diamond electrical contact hot extruded shapes is processed into the required size section bar through rolling or drawing and machining.
2. according to the manufacturing process of the said high-performance copper-copper-diamond electrical contact material of claim 1; It is characterized in that: said hydraulic atomized legal system is equipped with copper alloy powder; Be under the nitrogen protection condition, the copper alloy raw material placed in the intermediate frequency furnace melt that temperature is controlled at 1100～1200 ℃; Molten alloyed copper after the fusing through the high-pressure water mist nozzle, is atomized into copper alloy powder; Atomizing pressure is 50～100MPa, condensation rate 10
3～10
4K/s.
3. according to the manufacturing process of the said high-performance copper-copper-diamond electrical contact material of claim 1, it is characterized in that: said liquid phase reduction is produced the copper clad diamond dust, carries out according to following steps:
(1) powder-processed: with sintering furnace graphitization processing is carried out on the diamond dust surface earlier; Diluted hydrofluoric acid carries out acid treatment to diamond dust then; Said graphitization processing; Be under the nitrogen protection condition, bortz powder be put in 900～1000 ℃ the tube furnace and heat-treat, be incubated 30～60 minutes;
(2) coat copper: adopt reducing process copper on diamond surface coats;
(3) finished product is handled: the diamond dust of copper clad is filtered, washs, and vacuum drying sieves.
4. according to the manufacturing process of the said high-performance copper-copper-diamond electrical contact material of claim 3, it is characterized in that: said diamond dust acid treatment is with heat treated diamond dust, puts into the dilute hydrofluoric acid solution of 2～6N, stirs 10～20 minutes; Use flushing with clean water again,, and filter to neutral.
5. according to the manufacturing process of the said high-performance copper-copper-diamond electrical contact material of claim 3; It is characterized in that: said reducing process coats copper; Be the ammonia solvent copper sulphate with 30%, make it to form cupric ammine complex solution, the concentration of copper ion is 60～80g/L in this solution; Use ammoniacal liquor again, the pH value of cupric ammine complex solution is adjusted to 8.5～11, and makes solution temperature remain on 20 ℃～40 ℃; Then, the bortz powder of acid treatment is put into cupric ammine complex solution, constantly stir, and to drip concentration be 40% hydrazine hydrate, reduce coating.
6. according to the manufacturing process of the said high-performance copper-copper-diamond electrical contact material of claim 1, it is characterized in that: said compression moulding, the pressing pressure of isostatic pressing machine is at 50～300MPa, 3～5 seconds dwell times; Said vacuum-sintering is that copper-diamond electrical contact billet is put into sintering furnace, and its vacuum is less than 5 * 10
-3Pa, 750～950 ℃ of sintering temperatures, temperature retention time 1～2 hour; Said hot extrusion, the pressure of extruder are 15～25MPa, and the hot extrusion ratio is 10～25,600～850 ℃ of extrusion temperatures.
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| CN103489665B (en) * | 2013-10-08 | 2016-04-27 | 哈尔滨东大高新材料股份有限公司 | The preparation method of high breaking low-voltage electrical apparatus contact material, the preparation method of high breaking low-voltage electrical apparatus composite contact material |
| CN104538214B (en) * | 2014-12-11 | 2016-08-17 | 福达合金材料股份有限公司 | The copper-based slider material of foam copper is strengthened based on Graphene |
| CN106282835B (en) * | 2016-08-30 | 2017-12-15 | 嘉禾县飞恒合金铸造有限公司 | The secondary alloyed method for preparing high rigidity high-strength tenacity ferrio wear-resistant material |
| CN106783305A (en) * | 2016-12-05 | 2017-05-31 | 安徽永川电气设备有限公司 | A kind of high-tension switch cabinet static contact method for preparing powder metallurgy |
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| RU2739493C1 (en) * | 2020-06-29 | 2020-12-24 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский технологический университет "МИСиС" | Method of producing composite electric contact material of cu-sic |
| CN112935257B (en) * | 2021-01-26 | 2023-11-24 | 陕西省机械研究院 | Preparation process of copper-tungsten-based diamond radiating fin |
| CN112974809B (en) * | 2021-02-05 | 2022-06-17 | 哈尔滨工业大学 | Method for coating copper on surface of diamond/copper composite material |
| CN113976882B (en) * | 2021-10-29 | 2023-08-01 | 成都惠锋智造科技有限公司 | Preparation method of heat-conducting composite material |
| CN115821094B (en) * | 2022-11-30 | 2024-03-29 | 哈尔滨东大高新材料股份有限公司 | Copper-based electrical contact material with high tellurium content and preparation method thereof |
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| CN101070461B (en) * | 2007-05-18 | 2011-04-20 | 中南大学 | Super-high heat-conductive diamond-copper composite package material and production method |
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Effective date of registration: 20151203 Address after: 325600, No. six, No. 181, Yueqing Economic Development Zone, Zhejiang, Wenzhou Patentee after: WENZHOU LONGSUN ELECTRICAL ALLOY CO., LTD. Address before: 201603 No. 3168 Shen brick road, Sheshan Town, Shanghai, Songjiang District Patentee before: Shanghai Longsun Alloy Co., Ltd. |